照明用LED光效的热特性及其测试与评价方法的研究
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摘要
发光二极管(LED)是近年来照明技术领域的研究热点。以其潜在的高光效、长寿命、单色性好、固态、环保等优点而受到全世界的重视。世界上几个主要的发达国家都制定了自己的国家计划，强力推进LED照明技术。在这种情况下，LED技术近年来飞速发展。作为主要指标的光效目前商业化产品已接近1001m／w，而实验室产品的光效更高。因此，LED的应用领域已从以前的显示、信号领域逐步走向普通照明领域。但是，LED是与传统光源有很大区别的光源，特别是其发光效率与LED的发光体p-n结温度相关，即结温上升发光效率下降。而LED目前的发光效率仅30％左右，未来即使上升到50％也仍然有50％的能量转化为热能，这将造成LED结温的上升。因此，这样就存在如下另三个研究内容：1)．如何在灯具中降低LED的结温?2)．如何测试LED的结温?3)．在考虑LED器件工作时结温上升不可避免情况下，如何评价LED的光效?因此，这就是本论文的题目，即“照明用LED光效的热特性及其测试与评价方法的研究”。
论文首先通过理论分析了LED工作时结温上升光效下降的原因，即目前的LED产品有约70％的输入电能转化为热能，而LED芯片很小的热容与一定的热阻使p-n结温度快速上升。
之后，论文研究了LED在照明使用时(即灯具中)的散热模型，并对该模型进行了试验论证，结果也证实LED芯片到空气的热阻中，灯具的热阻占主要部分。文中对多款LED灯具进行散热试验，证实LED灯具的散热不仅与外壳的表面积相关，也与灯具的优化设计相关。
再其次，论文研究了LED结温的测试方法，即应用LED正向电压与结温的关系测试LED的结温。并基于此，提出了灯具中单颗LED的结温测试方法：通过同样单颗LED样品在灯具外小电流驱动下测试正向电压与p-n结结温的关系曲线，再测试LED在灯具中工作状态下并瞬间改为在同样小电流驱动时的正向电压，由此计算的LED在灯具状态下的结温。文中通过试验证实该方法可行，但也指出该方法需对LED灯具本身进行破坏性试验。因此，文中提出了大电流法测试LED的结温，即在灯具外通过与LED正常工作时一样的驱动电流测试同样样品的正向电压与结温的关系，然后只要测试LED在灯具内正常工作时的正向电压，即可获得LED在灯具内工作时的结温，而无需对LED灯具进行破坏性试验。文中通过比较证实该大电流法测试LED灯具内结温方法可行。同时通过误差分析，证实大电流法比小电流法具有更高的测试精度。
最后，文中建立了一个基于复合抛物面的LED光通量测试方法，并经过样品的测试结果与分布光度计的测试结果比对，初步证实该LED光通量测试方法可行。同时，基于LED工作时结温上升的必然性，文中通过分析现有LED光效的评价方法包括小电流脉冲法及一定结温下的光通量的不尽合理性，提出了采用标准散热器的光效评价方法。即在标准散热器下，比较两个LED的光效特性。对标准散热器作了说明，也通过实际灯具例子分析了该方法的准确性。作为最后结论，文中建议采用标准散热器下的光效将最有利于LED灯具的设计。
文章的结尾，也分析了该论文之后本工作需继续努力的方向：即完善建议的光通量测试方法，加大样品数，以进一步证实采用标准散热器下评价照明用LED的光效的合理性。并研制同样的基于标准散热器的评价LED颜色、寿命等的方法。
LED(light emitting diode) is very hot in the field of lighting recently,it attractsthe world because of its potentially high efficacy,long life,pure color,solid state andeco-friendly.America,Europe,Japan,South Korea and China had all establishednational plans to develop LED technology,which really make the technology progressquickly in last ten years.Efficacy,as one of the most important parameters of lightsources,has approached 1001m/W for LED commercial products and much higherthan the data for LED samples made by laboratories,which extends LED'sapplication from display,sign and signal to general lighting.However,LED has somecharacteristics quite different from conventional light sources,of which efficacyrelationship to temperature is the most important.LED's efficacy decreasesconsiderably with increasing of the temperature of p-n junction (T_j),the emitter.Currently LED transfer efficiency from electric power to light power is about 30%and 50% is expected in future,this means that more than half of the power heats theLED itself and makes T_j increase,thus decrease its efficacy.Three topics result fromthe problem:1).How to decrease T_j in lumiaire? 2).How to measure T_j in lumiaire? 3).How to evaluate the LED's efficacy in case of its dependent on T_j which increasesdefinitely when LED works? The dissertation,Research on Thermal Characteristics ofEfficacy and Methodology of the Efficacy of LED for Lighting Application,investigates the three questions.
At beginning,the dissertation analyzes systematically the reasons why T_jincreases:heat produced by LED itself and its small calorific capacity.
Second,a theoretical mode was set to analyze heat sink of LEDs in a luminaire.The mode was proved correct by measuring T_j of a protocol luminaire with LEDslighting on inside.The analysis also shows that thermal resistance from LED solderpoint to air,which is depended on luminaire design only,is much higher than thethermal resistance of LED itself,this means the design luminaire is important toLED thermal management.Several well-designed luminaires were tested their T_js tocheck the design then we indicates some designs are better than others.
Third,to measure the T_j when LEDs work in a luminaire,two methods basing onthe relationship of LED's T_j and its forward voltage were investigated.One is tocalibrate the relationship and test forward voltage by driving LED with a very short and small pulsed current,another is by big stable current same as that of LEDnormal work.Some modification is needed for circuits of the luminaire when usesmall current,this makes the measurement quite inconvenient.Several luminaireswere tested by both methods and results are similar.However,uncertainty analysisshows that method with big current has higher accuracy,thus better than methodwith small current.
Fourth,a Compound Parabolic Concentrator (CPC) is introduced to collect thelights from a LED in conjunction with a detector which in turn measures the total flux,here integrate sphere is not necessary.We analyzed the problems of methodologies ofLED's efficacy by pulsed current and in certain T_j,and suggested a new definitioncalled efficacy at standards heat sink,test of a real luminaire shows that definition ismore reasonable for LED lighting application.
In the end of the dissertation,we suggest more experiments are needed for thenew definition of LED efficacy in later work,and instrument will be designed toprove the CPC measurement method of LED.Finishing of the two works meanspossibly new methodology and evaluation of LED efficacy come out.
论文首先通过理论分析了LED工作时结温上升光效下降的原因，即目前的LED产品有约70％的输入电能转化为热能，而LED芯片很小的热容与一定的热阻使p-n结温度快速上升。
之后，论文研究了LED在照明使用时(即灯具中)的散热模型，并对该模型进行了试验论证，结果也证实LED芯片到空气的热阻中，灯具的热阻占主要部分。文中对多款LED灯具进行散热试验，证实LED灯具的散热不仅与外壳的表面积相关，也与灯具的优化设计相关。
再其次，论文研究了LED结温的测试方法，即应用LED正向电压与结温的关系测试LED的结温。并基于此，提出了灯具中单颗LED的结温测试方法：通过同样单颗LED样品在灯具外小电流驱动下测试正向电压与p-n结结温的关系曲线，再测试LED在灯具中工作状态下并瞬间改为在同样小电流驱动时的正向电压，由此计算的LED在灯具状态下的结温。文中通过试验证实该方法可行，但也指出该方法需对LED灯具本身进行破坏性试验。因此，文中提出了大电流法测试LED的结温，即在灯具外通过与LED正常工作时一样的驱动电流测试同样样品的正向电压与结温的关系，然后只要测试LED在灯具内正常工作时的正向电压，即可获得LED在灯具内工作时的结温，而无需对LED灯具进行破坏性试验。文中通过比较证实该大电流法测试LED灯具内结温方法可行。同时通过误差分析，证实大电流法比小电流法具有更高的测试精度。
最后，文中建立了一个基于复合抛物面的LED光通量测试方法，并经过样品的测试结果与分布光度计的测试结果比对，初步证实该LED光通量测试方法可行。同时，基于LED工作时结温上升的必然性，文中通过分析现有LED光效的评价方法包括小电流脉冲法及一定结温下的光通量的不尽合理性，提出了采用标准散热器的光效评价方法。即在标准散热器下，比较两个LED的光效特性。对标准散热器作了说明，也通过实际灯具例子分析了该方法的准确性。作为最后结论，文中建议采用标准散热器下的光效将最有利于LED灯具的设计。
文章的结尾，也分析了该论文之后本工作需继续努力的方向：即完善建议的光通量测试方法，加大样品数，以进一步证实采用标准散热器下评价照明用LED的光效的合理性。并研制同样的基于标准散热器的评价LED颜色、寿命等的方法。
LED(light emitting diode) is very hot in the field of lighting recently,it attractsthe world because of its potentially high efficacy,long life,pure color,solid state andeco-friendly.America,Europe,Japan,South Korea and China had all establishednational plans to develop LED technology,which really make the technology progressquickly in last ten years.Efficacy,as one of the most important parameters of lightsources,has approached 1001m/W for LED commercial products and much higherthan the data for LED samples made by laboratories,which extends LED'sapplication from display,sign and signal to general lighting.However,LED has somecharacteristics quite different from conventional light sources,of which efficacyrelationship to temperature is the most important.LED's efficacy decreasesconsiderably with increasing of the temperature of p-n junction (T_j),the emitter.Currently LED transfer efficiency from electric power to light power is about 30%and 50% is expected in future,this means that more than half of the power heats theLED itself and makes T_j increase,thus decrease its efficacy.Three topics result fromthe problem:1).How to decrease T_j in lumiaire? 2).How to measure T_j in lumiaire? 3).How to evaluate the LED's efficacy in case of its dependent on T_j which increasesdefinitely when LED works? The dissertation,Research on Thermal Characteristics ofEfficacy and Methodology of the Efficacy of LED for Lighting Application,investigates the three questions.
At beginning,the dissertation analyzes systematically the reasons why T_jincreases:heat produced by LED itself and its small calorific capacity.
Second,a theoretical mode was set to analyze heat sink of LEDs in a luminaire.The mode was proved correct by measuring T_j of a protocol luminaire with LEDslighting on inside.The analysis also shows that thermal resistance from LED solderpoint to air,which is depended on luminaire design only,is much higher than thethermal resistance of LED itself,this means the design luminaire is important toLED thermal management.Several well-designed luminaires were tested their T_js tocheck the design then we indicates some designs are better than others.
Third,to measure the T_j when LEDs work in a luminaire,two methods basing onthe relationship of LED's T_j and its forward voltage were investigated.One is tocalibrate the relationship and test forward voltage by driving LED with a very short and small pulsed current,another is by big stable current same as that of LEDnormal work.Some modification is needed for circuits of the luminaire when usesmall current,this makes the measurement quite inconvenient.Several luminaireswere tested by both methods and results are similar.However,uncertainty analysisshows that method with big current has higher accuracy,thus better than methodwith small current.
Fourth,a Compound Parabolic Concentrator (CPC) is introduced to collect thelights from a LED in conjunction with a detector which in turn measures the total flux,here integrate sphere is not necessary.We analyzed the problems of methodologies ofLED's efficacy by pulsed current and in certain T_j,and suggested a new definitioncalled efficacy at standards heat sink,test of a real luminaire shows that definition ismore reasonable for LED lighting application.
In the end of the dissertation,we suggest more experiments are needed for thenew definition of LED efficacy in later work,and instrument will be designed toprove the CPC measurement method of LED.Finishing of the two works meanspossibly new methodology and evaluation of LED efficacy come out.
引文
[1]www.cree.com
[2]国家新材料行业生产力促进中心，国家半导体照明工程研发及产业联盟．中国半导体照明产业发展报告．北京：机械工业出版社，2005．
[3]H.J.Round.A Note on Carborundum.Electrical World,1907,49:309.
[4]J.N.Honlonyak,S.F.Bevacqua.Coherent(visible) light emission from Ga(Asl-x Px) junctions.Applied Physics Letters,1962,1(4):82-83.
[5]J.N.Honlonyak,S.F.Bevacqua.Coherent(visible) light emission from Ga(Asl-x Px) junctions.Applied Physics Letters,1962,1(4):82-83.
[6]方志烈．半导体发光材料和器件．上海：复旦大学出版社，1992．
[7]刘木清，周德成，梅毅．LED与传统光效比较分析-LED用于传统照明前景分析．照明工程学报，2006(4)：41-45．
[8]J.Y.Tsao.Solid state lighting,lamps,chips and materials for tomorrow.IEEE Circuits & Device Magazine,2004,20(3):28-37.
[9]www.cree.com
[10]N.Narandran,L.Deng,R.M.Pysar,et al.Performance characteristics of high-power light-emitting diodes.3rd International Conference on Solid-State-Lighting,2004,267-275.
[11]IESNA.Lighting Handbook:Reference and application.New York:IESNA,2000.
[12]Energy Savings Potential of Solid State Lighting in General Illumination Applications
[13]A.Bergh,G.Craford,A.Duggal,et al.The Promise And Challenge of Solid State Lighting.Physics Today,2001,54(13):42-47.
[14]D.A.Steigerwald,J.C.Bhat,D.Collins,et al.Illumination With Solid State Lighting Technology.IEEE Journal of Selected Topics in Quantum Electronics,2002,8(2):310-320.
[15]J.Tsao.Solid-State Lighting:Opportunities and Challenges.The 2~(nd) China International Forum on Solid State Lighting,2005.
[16]R.Mueller-Mach,G.O.Mueller.White Light Emitting Diodes for Illumination.Light-Emitting Diodes:Research,Manufacturing,and Applications IV,2000,30-41.
[17]G.B.Stringfellow,M.G.Craford.High-brightness light emitting diodes.San Diego:Academic Press,1997.
[18]李文宜，张万路,江磊．LED应用于道路照明的探讨．2008中国道路照明论坛论文集：77-80．
[19]I.S.Chhajed,Y.Xi,Th.Gessmann,and E.F.Schubert,“Junction Temperature in Light-emitting Diodes Assessed by Different Methods”,Proc.SPIE,(2005).
[20]Jen-Hau Cheng et.al Cooling Performance of Silicon-Based Thermoelectric Device on High Power LED 2005 International Conference on Thermoelectrics:53-56.
[21]张万路，江磊，江程，陈郁阳，刘木清．LED道路灯具散热系统分析．中国照明电器，2009(2)：6-10．
[22]周跃平，郭霞，王海玲，et al．GaN基发光二极管寿命测试及失效分析．半导体光电，2007，28(3)：345-348．
[23]郑代顺，钱可元，罗毅．大功率发光二极管的寿命试验及其失效分析．半导体光电，2005，26(2)：87-91．
[24]林亮，陈志忠。陈挺，et al．白光LED的加速老化特性．发光学报，2005，26(5)：617-621．
[25]罗向东，边历峰，徐仲英，et al．GaAs_(1-x)Sb_x／GaAs单量子阱的光学特性研究．物理学报，2003，52(7)：176I一1765．
[26]罗毅，郭文平，邵嘉平，et al．GaN基蓝光发光二极管的波长稳定性研究．物理学报，2004，53(8)：2720—2723．
[27]R.Mueller-Mach,G.O.Mueller,M.R.Krames.High-Power Phosphor-Converted Light-Emitting Diodes Based on III-Nitrides.IEEE Journal of Selected Topics in Quantum Electronics,2002,8(2):339-345.
[28]李永绣，闵宇霖，周雪珍，et al．有机-无机杂化凝胶法合成YAG：Ce3+荧光粉的包膜及其稳定性．无机化学学报，2003，19(11)：1169-1174．
[29]CREE X-LAMPS DATASHEET
[30]M．J．Howes，D．V．Morgan，S．D．Mukherjee，et al．半导体器件及电路的可靠性与退化．北京：科学出版社，1989．
[31]M.Fukuda.Laser and LED reliability update.Journal of Lightwave Technology,1988,6(10):1488-1495.
[32]D.L.Barton,M.Osinski,P.Perlin,et al.Single quantum well InGaN green light emitting diode degradation under high electrical stress.Microelectronics Reliability,1999,39(8):1219-1227.
[33]D.L.Barton,M.Osinski,P.Perlin,et al.Life test and failure mechanisms of GaN/AIGaN/InGaN Light Emitting Diodes.IEEE International Proc.Annual Symposium of 5th Reliability Physics,1997,276-281.
[34]D.L.Barton,M.Osinski,P.Perlin,et al.Degradation of single-quantum well InGaN green light emit-ring diodes under high electrical stress.IEEE Proc.of the 36th Reliability Physics Symposium,1998,119-123.
[11Arturas Zukauskas，Michael s．Shur．固体照明导论．化学工业出版社，2006．
[2]方志烈．半导体发光材料和器件．上海：复旦大学出版社，1992．
[3]E.E Schubert.Light-Emitting Diodes.Cambridge:Cambridge U.Press,2003.
[4]C.P.Kuo,R.M.Fletcher,T.D.Osentowski,et al.High performance A1GalnP visible light-emitting diodes.Applied Physics Letters,1990,57(27):2937-2939.
[5]刘木清，周德成，梅毅．LED与传统光效比较分析-LED用于传统照明前景分析．照明工程学报，2006(4)：41-45．
[6]K.Murakami,H.Kudo,T.Taguchi,et al.Compound semiconductor lighting based on InGaN ultraviolet LED andZnS phosphor system.IEEE International Symposium on Compound Semiconductors,2000,449-454.
[7]M.Yamada,Y.Narukawa,T.Mukai.Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well.Japanese Journal of applied physics,2002,41(3):L246-L248.
[8]D.A.Steigerwald,J.C.Bhat,D.Collins,et al.Illumination With Solid State Lighting Technology.IEEE Journal of Selected Topics in Quantum Electronics,2002,8(2):310-320.
[9]R.V.Steele.Overview of the world market for high-brightness LEDs.4th International Forum on Solid State Lighting,2007,65-74.
[10]www.philips.com
[11]王国宏．半导体照明大功率LED进展．新材料产业，2004，6(6)：26229．
[12]陈志忠，秦志新，胡晓东，等．大功率白光LED的制备及表征[J]．液晶与显示，2004．19(2)：7210．
[13]罗向东，边历峰，徐仲英，et al．GaAsl-xSbx／GaAs单量子阱的光学特性研究．物理学报，2003，52(7)：1761-1765．
[14]J.Y.Tsao,“Solid-State Lighting:Lamp Targets and Implications for the Semiconductor Chip,” IEEE Circuits and Device magazine 8755-3996/04,28-37(2004).
[15]Muqing Liu,Bifeng Rong,Huub W.M.Salemink.“Evaluation of LED application in general lighting”.Optical Engineering:46(7),74002-1-6(2007).
[16]Jen-Hau Cheng et.al Cooling Performance of Silicon-Based Thermoelectric device on High Power LED 2005 International Conference on Thermoeleetrics:53-56.
[17]CNKI科技数值知识元库http：／／number．cnki．net／science．
[18]周太明等．光源原理与设计(第二版)．复旦大学出版社：30-35．
[19]S.Nakamura,M.Senoh,T.Mukai.P-GaN/n-InGaN/n-GaN double-heterostructure blue-light-emitting diodes.Japanese Journal of Applied Physics,1993,32:L8-L11.
[20]KASUYA R,ISOBE T,KUMA H,et al.Glyeothermal synthesis and photolumineseence ofYAG:Ce3+ nanophosphors[J].nal of Alloys and Compounds,2006,408:8202823.
[21]唐英杰，王宇方，杨志坚，等，GaN基白光LED的研制与特性[J]．发光学报，2001(1)：51254．
[22]刘如嘉，石景仁．白光发光二极管用钇铝石榴石荧光粉配方与机制研究[J]．中国稀土学报，2002(12)：4952501．
[23]S.Nakamura.Latest performance of GaN-based solid state lighting.11th International Symposium on the Science and technology of light sources.2007:IL02.
[24]S.Muthu,F.J.P.Sehuurmans,and M.D.Pashley.“Red,green,and blue LEDs for white light illumination”. IEEE Journal of Selected Topics in Quantum Electronics.Volume 8,Issue 2,March-April 2002 Page(s):333-338
[25]S.Muthu,F.J.P.Schuurmans,and M.D.Pashley,.“Red,green,and blue LED based white light generation:issues and control”.Conference Record of the Industry Applications Conference 37th IAS Annual Meeting Volume 1,2002,Page(s):327-333.
[26]Sugawara H,Itaya K,Nozaki H,et al.High2brightness InGaAIP green light emitting diodes [J].Appl.Phys.Lett.,1992,61(15) :1775-1777.
[27]Kish F A,Steranka F M ,DeFevere D C,et al.Very high efficiency semiconductor wafer bonded trans-parent substrate(Al x Gal -x ) 0.5 In0.5 P/GaP light emitting diodes [J].Appl.Phys.Lett.,1994,64(21):2839-2841.
[28]Nakamura S,Mukai T,Senoh M.Candela2class high brightness InGaN/AIGaN double heterost ructure blue light emitting diodes [J].Appl.Phys.Lett.,1994,64(13):1687-1689.
[29]Schlotter P,Schmidt R,Schneider J.Luminescence conversion of blue light emitting diodes [J].Appl.Phys.A ,1997,64:417-418.
[30]Fumitomo H,Peter K.White light from InGaN conjugated polymer hybrid light emitting diodes [J].Appl.Phys.Lett.,1997,70(20):2664-2666.
[31]Park J K,Lim M A,Kim C H,et al.White light emitting diodes of GaN-based St2 SiO4:Eu and the luminescent properties[J].Appl.Phys.Lett.,2003,82(5):683-685.
[32]刘熙娟，温岩，朱绍龙．白光LED的使用寿命的定义和测试方法[J]．光源与照明，2001，4：16222．
[33]袁川，刘木清等．标准光源高稳定电源的设计[J]．光源与照明．2006，1，24-28．
[34]梅毅，刘木清等．便携式LED颜色测量系统设计．45-49．
[1]罗小兵，刘胜等．基于微喷射流的高功率LED散热方案数值分析和研究．中国科学，E辑：技术科学，2007(9)：1194-1204．
[2]Jen-Hau Cheng*,Chun-Kai Liu,et.al Cooling Performance of Silicon-Based Thermoelectric Device on High Power LED 2005 International Conference on Thermoelectrics 53-56.
[3]Mehmet Arik,Charles Becker,Stanton Weaver and James Petroski.“Thermal Management of LEDs:Package to System,”.Proc.Of SPIE,Vol.5187,pp.64-75,2004.
[4]Yimin Gu and Nadarajah Narendran.“A Non-Contact Method for Determining Junction Temperature of Phosophor-Converted,”.Proc.Of SPIE,Vol.5187,pp.64-75,2004.
[5]J．P．霍尔曼．传热学(第9版)．机械工业出版社：13．
[6]J．P．霍尔曼．传热学(第9版)．机械工业出版社：25．
[7]J．P．霍尔曼．传热学(第9版)．机械工业出版社：6-9．
[8]张万路，江磊，江程，陈郁阳，刘木清．LED道路灯具散热系统分析．中国照明电器．2009(2)：6-10．
[9]GB7001-1986．灯具外壳防护等级分类．
[10]GB700．11-1999．可移式通用灯具安全要求．
[11]GB7000．10-1999．固定式灯具安全要求．
[12]QBT3741-1999．灯具电镀、化学覆盖层要求．
[13]GB7000．5-2005．道路与街道照明灯具的安全要求．
[1]罗向东，边历峰，徐仲英，et al．GaAs_(1-x)Sb_x／GaAs单量子阱的光学特性研究．物理学报，2003，52(7)：1761-1765．
[2]罗毅，郭文平，邵嘉平，et al．GaN基蓝光发光二极管的波长稳定性研究．物理学报，2004，53(8)：2720-2723．
[3]S.Chhajed,Y.Xi,Th.Gessmann,and E.F.Schubert.“Junction Temperature in Light-emitting Diodes Assessed by Different Methods”.Proc.SPIE,(2005).
[4]Yangang XI,Thomas Gessmann,E.Fred Schubert.“Junction Temperature in Ultraviolet Light-Emitting Diodes”.Japanese Journal of Applied Physics.Vol.44,No.10,(2005),pp.7260-7266.
[5]Lan Kim,MooWaan Shin.“Thermal Resistance Measurement of LED Package with Multichips”.IEEE Transactions on Components and Packaging Technologies.Vol.30,No.4,(2007),pp.632-636.
[6]EIA/]ESD51-1-1995.Integrated circuits thermal measurement method-electrical test method(single semiconductor device).EIA/JEDEC Standard.
[7]SJ20788-2000．半导体二极管热阻抗测试方法．中华人民共和国电子行业军用标准．
[8]Y.Xi and E.F.Schubert Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method APPLIED PHYSICS LETTERS VOLUME 85,NUMBER 12 2163-2165.
[9]沈学础．半导体光谱和光学性质．北京：科学出版社，2002．
[10]沈海平，潘建根．LED光谱数学模型及其应用．中国照明学会(2005)学术年会，2005，83-85．
[11]V.Szekely,T.V.Bien.Fine structure of heat flow path in semiconductor devices:a measurement and identification method.Solid-state Electronics,1988,31:1363-1368.
[12]V.Szekely.A new evaluation method of thermal transient measurement results.Microelectronics Journal,1997,28:277-292.
[13]陈维友，杨树人，刘式墉．光电子器件模型与OEIC模拟．北京：国防工业出版，2001．
[14]John W.Sofia.“Electrical temperature measurement using semiconductors”.Website:“http://www.electronicscooling,com.
[15]David Eastley.“Evaluating High-Power LEDs”.Proceedings of Strategies unlimited.San Francisco,California,Feb,2006.
[16]Lianqiao Yang,JianzhengHu,Lan Kim,and MooWhan Shin.“Vitiation of Thermal Resistance with Input Power in LEDs.Phys.Star.Sol.(C)3,No.6,(2006),:2187-2196.
[17]ISO.Guide to the expression of uncertainty in measurement,second edition.1995.
[18]李慎安．测量不确定度表达百问．北京：中国计量出版社，2001．
[19]沈海平．大功率LED可靠性预测机制研究(博士论文)：31-36．
[1]Department of Energy-Energy efficiency and renewable energy,DOE024-1 409.
[2]Muqing Liu,Bifeng Rong,Huub W.M.Salemink ,“Evaluation of LED application in general lighting”,Optical Engineering July 2007,V46/N7,74002-1~6.
[3]J.Y.Tsao,“Solid-State Lighting:Lamp Targets and Implications for the Semiconductor Chip,” IEEE Circuits and Device magazine 8755-3996/04,28-37(2004).
[4]M.G.Craford,“Update on high power LED technology and progress towards solid state lighting” Proc.of 5th China International Forum on Solid state lighting,1~7(comprehensive section),Shenzhen,China,(2008).
[5]David G.Pelkaa,Kavita Patelb,“An Overview of LED Applications for General Illumination”,Proceedings of SPIE Vol.5186,Design of Efficient Illumination Systems,15~26.
[6]Yoshi Ohno,“Spectral design considerations for white LED color rendering”,Optical Engineering 44(11),111302(November 2005).
[7]http://www,lumileds,com,see superflux LEDs.
[8]http://www.cree,com,see X-Bright Plus LED specifications.
[9]International Commission on Illumination,CIE Technical report,Measurement of LEDs,CIE-127:2007.
[10]李文宜，张万路，袁川，刘木清，测量LED总光通量的积分球装置中光源位置的探讨，复旦学报(自然科学版)，Vol．46 No．3，J un．2007，356~359．
[11]Ohno Y and Zong Y.“Detector-based integrating sphere photometry”.in proceeding of 24th Session of the CIE Part 1,(1999):155-160.
[12]Ohno Y,“Spectral design considerations for white LED color rendering,” Optical Engineering 44,111302(2005).
[13]吕正，樊其明，吕亮．LED光通量测量中的自吸收效应及校正．照明工程学报．2006年6月，第17卷第2期：16～18．
[14]周小丽，刘木清等．LED光通量测试系统的研究，光电子．激光，July，2008，V19／N6：728~730．
[15]Y.Xi and E.F.Schubert.“Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method”.APPLIED PHYSICS LETTERS 85/12,2163~2165(Sept.2004).
[16]Application Note ANOSI608a.“In-Situ LED Junction Temperature and Thermal Resistance Measurement”,Vektrex Electronic system Inc.
[2]国家新材料行业生产力促进中心，国家半导体照明工程研发及产业联盟．中国半导体照明产业发展报告．北京：机械工业出版社，2005．
[3]H.J.Round.A Note on Carborundum.Electrical World,1907,49:309.
[4]J.N.Honlonyak,S.F.Bevacqua.Coherent(visible) light emission from Ga(Asl-x Px) junctions.Applied Physics Letters,1962,1(4):82-83.
[5]J.N.Honlonyak,S.F.Bevacqua.Coherent(visible) light emission from Ga(Asl-x Px) junctions.Applied Physics Letters,1962,1(4):82-83.
[6]方志烈．半导体发光材料和器件．上海：复旦大学出版社，1992．
[7]刘木清，周德成，梅毅．LED与传统光效比较分析-LED用于传统照明前景分析．照明工程学报，2006(4)：41-45．
[8]J.Y.Tsao.Solid state lighting,lamps,chips and materials for tomorrow.IEEE Circuits & Device Magazine,2004,20(3):28-37.
[9]www.cree.com
[10]N.Narandran,L.Deng,R.M.Pysar,et al.Performance characteristics of high-power light-emitting diodes.3rd International Conference on Solid-State-Lighting,2004,267-275.
[11]IESNA.Lighting Handbook:Reference and application.New York:IESNA,2000.
[12]Energy Savings Potential of Solid State Lighting in General Illumination Applications
[13]A.Bergh,G.Craford,A.Duggal,et al.The Promise And Challenge of Solid State Lighting.Physics Today,2001,54(13):42-47.
[14]D.A.Steigerwald,J.C.Bhat,D.Collins,et al.Illumination With Solid State Lighting Technology.IEEE Journal of Selected Topics in Quantum Electronics,2002,8(2):310-320.
[15]J.Tsao.Solid-State Lighting:Opportunities and Challenges.The 2~(nd) China International Forum on Solid State Lighting,2005.
[16]R.Mueller-Mach,G.O.Mueller.White Light Emitting Diodes for Illumination.Light-Emitting Diodes:Research,Manufacturing,and Applications IV,2000,30-41.
[17]G.B.Stringfellow,M.G.Craford.High-brightness light emitting diodes.San Diego:Academic Press,1997.
[18]李文宜，张万路,江磊．LED应用于道路照明的探讨．2008中国道路照明论坛论文集：77-80．
[19]I.S.Chhajed,Y.Xi,Th.Gessmann,and E.F.Schubert,“Junction Temperature in Light-emitting Diodes Assessed by Different Methods”,Proc.SPIE,(2005).
[20]Jen-Hau Cheng et.al Cooling Performance of Silicon-Based Thermoelectric Device on High Power LED 2005 International Conference on Thermoelectrics:53-56.
[21]张万路，江磊，江程，陈郁阳，刘木清．LED道路灯具散热系统分析．中国照明电器，2009(2)：6-10．
[22]周跃平，郭霞，王海玲，et al．GaN基发光二极管寿命测试及失效分析．半导体光电，2007，28(3)：345-348．
[23]郑代顺，钱可元，罗毅．大功率发光二极管的寿命试验及其失效分析．半导体光电，2005，26(2)：87-91．
[24]林亮，陈志忠。陈挺，et al．白光LED的加速老化特性．发光学报，2005，26(5)：617-621．
[25]罗向东，边历峰，徐仲英，et al．GaAs_(1-x)Sb_x／GaAs单量子阱的光学特性研究．物理学报，2003，52(7)：176I一1765．
[26]罗毅，郭文平，邵嘉平，et al．GaN基蓝光发光二极管的波长稳定性研究．物理学报，2004，53(8)：2720—2723．
[27]R.Mueller-Mach,G.O.Mueller,M.R.Krames.High-Power Phosphor-Converted Light-Emitting Diodes Based on III-Nitrides.IEEE Journal of Selected Topics in Quantum Electronics,2002,8(2):339-345.
[28]李永绣，闵宇霖，周雪珍，et al．有机-无机杂化凝胶法合成YAG：Ce3+荧光粉的包膜及其稳定性．无机化学学报，2003，19(11)：1169-1174．
[29]CREE X-LAMPS DATASHEET
[30]M．J．Howes，D．V．Morgan，S．D．Mukherjee，et al．半导体器件及电路的可靠性与退化．北京：科学出版社，1989．
[31]M.Fukuda.Laser and LED reliability update.Journal of Lightwave Technology,1988,6(10):1488-1495.
[32]D.L.Barton,M.Osinski,P.Perlin,et al.Single quantum well InGaN green light emitting diode degradation under high electrical stress.Microelectronics Reliability,1999,39(8):1219-1227.
[33]D.L.Barton,M.Osinski,P.Perlin,et al.Life test and failure mechanisms of GaN/AIGaN/InGaN Light Emitting Diodes.IEEE International Proc.Annual Symposium of 5th Reliability Physics,1997,276-281.
[34]D.L.Barton,M.Osinski,P.Perlin,et al.Degradation of single-quantum well InGaN green light emit-ring diodes under high electrical stress.IEEE Proc.of the 36th Reliability Physics Symposium,1998,119-123.
[11Arturas Zukauskas，Michael s．Shur．固体照明导论．化学工业出版社，2006．
[2]方志烈．半导体发光材料和器件．上海：复旦大学出版社，1992．
[3]E.E Schubert.Light-Emitting Diodes.Cambridge:Cambridge U.Press,2003.
[4]C.P.Kuo,R.M.Fletcher,T.D.Osentowski,et al.High performance A1GalnP visible light-emitting diodes.Applied Physics Letters,1990,57(27):2937-2939.
[5]刘木清，周德成，梅毅．LED与传统光效比较分析-LED用于传统照明前景分析．照明工程学报，2006(4)：41-45．
[6]K.Murakami,H.Kudo,T.Taguchi,et al.Compound semiconductor lighting based on InGaN ultraviolet LED andZnS phosphor system.IEEE International Symposium on Compound Semiconductors,2000,449-454.
[7]M.Yamada,Y.Narukawa,T.Mukai.Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well.Japanese Journal of applied physics,2002,41(3):L246-L248.
[8]D.A.Steigerwald,J.C.Bhat,D.Collins,et al.Illumination With Solid State Lighting Technology.IEEE Journal of Selected Topics in Quantum Electronics,2002,8(2):310-320.
[9]R.V.Steele.Overview of the world market for high-brightness LEDs.4th International Forum on Solid State Lighting,2007,65-74.
[10]www.philips.com
[11]王国宏．半导体照明大功率LED进展．新材料产业，2004，6(6)：26229．
[12]陈志忠，秦志新，胡晓东，等．大功率白光LED的制备及表征[J]．液晶与显示，2004．19(2)：7210．
[13]罗向东，边历峰，徐仲英，et al．GaAsl-xSbx／GaAs单量子阱的光学特性研究．物理学报，2003，52(7)：1761-1765．
[14]J.Y.Tsao,“Solid-State Lighting:Lamp Targets and Implications for the Semiconductor Chip,” IEEE Circuits and Device magazine 8755-3996/04,28-37(2004).
[15]Muqing Liu,Bifeng Rong,Huub W.M.Salemink.“Evaluation of LED application in general lighting”.Optical Engineering:46(7),74002-1-6(2007).
[16]Jen-Hau Cheng et.al Cooling Performance of Silicon-Based Thermoelectric device on High Power LED 2005 International Conference on Thermoeleetrics:53-56.
[17]CNKI科技数值知识元库http：／／number．cnki．net／science．
[18]周太明等．光源原理与设计(第二版)．复旦大学出版社：30-35．
[19]S.Nakamura,M.Senoh,T.Mukai.P-GaN/n-InGaN/n-GaN double-heterostructure blue-light-emitting diodes.Japanese Journal of Applied Physics,1993,32:L8-L11.
[20]KASUYA R,ISOBE T,KUMA H,et al.Glyeothermal synthesis and photolumineseence ofYAG:Ce3+ nanophosphors[J].nal of Alloys and Compounds,2006,408:8202823.
[21]唐英杰，王宇方，杨志坚，等，GaN基白光LED的研制与特性[J]．发光学报，2001(1)：51254．
[22]刘如嘉，石景仁．白光发光二极管用钇铝石榴石荧光粉配方与机制研究[J]．中国稀土学报，2002(12)：4952501．
[23]S.Nakamura.Latest performance of GaN-based solid state lighting.11th International Symposium on the Science and technology of light sources.2007:IL02.
[24]S.Muthu,F.J.P.Sehuurmans,and M.D.Pashley.“Red,green,and blue LEDs for white light illumination”. IEEE Journal of Selected Topics in Quantum Electronics.Volume 8,Issue 2,March-April 2002 Page(s):333-338
[25]S.Muthu,F.J.P.Schuurmans,and M.D.Pashley,.“Red,green,and blue LED based white light generation:issues and control”.Conference Record of the Industry Applications Conference 37th IAS Annual Meeting Volume 1,2002,Page(s):327-333.
[26]Sugawara H,Itaya K,Nozaki H,et al.High2brightness InGaAIP green light emitting diodes [J].Appl.Phys.Lett.,1992,61(15) :1775-1777.
[27]Kish F A,Steranka F M ,DeFevere D C,et al.Very high efficiency semiconductor wafer bonded trans-parent substrate(Al x Gal -x ) 0.5 In0.5 P/GaP light emitting diodes [J].Appl.Phys.Lett.,1994,64(21):2839-2841.
[28]Nakamura S,Mukai T,Senoh M.Candela2class high brightness InGaN/AIGaN double heterost ructure blue light emitting diodes [J].Appl.Phys.Lett.,1994,64(13):1687-1689.
[29]Schlotter P,Schmidt R,Schneider J.Luminescence conversion of blue light emitting diodes [J].Appl.Phys.A ,1997,64:417-418.
[30]Fumitomo H,Peter K.White light from InGaN conjugated polymer hybrid light emitting diodes [J].Appl.Phys.Lett.,1997,70(20):2664-2666.
[31]Park J K,Lim M A,Kim C H,et al.White light emitting diodes of GaN-based St2 SiO4:Eu and the luminescent properties[J].Appl.Phys.Lett.,2003,82(5):683-685.
[32]刘熙娟，温岩，朱绍龙．白光LED的使用寿命的定义和测试方法[J]．光源与照明，2001，4：16222．
[33]袁川，刘木清等．标准光源高稳定电源的设计[J]．光源与照明．2006，1，24-28．
[34]梅毅，刘木清等．便携式LED颜色测量系统设计．45-49．
[1]罗小兵，刘胜等．基于微喷射流的高功率LED散热方案数值分析和研究．中国科学，E辑：技术科学，2007(9)：1194-1204．
[2]Jen-Hau Cheng*,Chun-Kai Liu,et.al Cooling Performance of Silicon-Based Thermoelectric Device on High Power LED 2005 International Conference on Thermoelectrics 53-56.
[3]Mehmet Arik,Charles Becker,Stanton Weaver and James Petroski.“Thermal Management of LEDs:Package to System,”.Proc.Of SPIE,Vol.5187,pp.64-75,2004.
[4]Yimin Gu and Nadarajah Narendran.“A Non-Contact Method for Determining Junction Temperature of Phosophor-Converted,”.Proc.Of SPIE,Vol.5187,pp.64-75,2004.
[5]J．P．霍尔曼．传热学(第9版)．机械工业出版社：13．
[6]J．P．霍尔曼．传热学(第9版)．机械工业出版社：25．
[7]J．P．霍尔曼．传热学(第9版)．机械工业出版社：6-9．
[8]张万路，江磊，江程，陈郁阳，刘木清．LED道路灯具散热系统分析．中国照明电器．2009(2)：6-10．
[9]GB7001-1986．灯具外壳防护等级分类．
[10]GB700．11-1999．可移式通用灯具安全要求．
[11]GB7000．10-1999．固定式灯具安全要求．
[12]QBT3741-1999．灯具电镀、化学覆盖层要求．
[13]GB7000．5-2005．道路与街道照明灯具的安全要求．
[1]罗向东，边历峰，徐仲英，et al．GaAs_(1-x)Sb_x／GaAs单量子阱的光学特性研究．物理学报，2003，52(7)：1761-1765．
[2]罗毅，郭文平，邵嘉平，et al．GaN基蓝光发光二极管的波长稳定性研究．物理学报，2004，53(8)：2720-2723．
[3]S.Chhajed,Y.Xi,Th.Gessmann,and E.F.Schubert.“Junction Temperature in Light-emitting Diodes Assessed by Different Methods”.Proc.SPIE,(2005).
[4]Yangang XI,Thomas Gessmann,E.Fred Schubert.“Junction Temperature in Ultraviolet Light-Emitting Diodes”.Japanese Journal of Applied Physics.Vol.44,No.10,(2005),pp.7260-7266.
[5]Lan Kim,MooWaan Shin.“Thermal Resistance Measurement of LED Package with Multichips”.IEEE Transactions on Components and Packaging Technologies.Vol.30,No.4,(2007),pp.632-636.
[6]EIA/]ESD51-1-1995.Integrated circuits thermal measurement method-electrical test method(single semiconductor device).EIA/JEDEC Standard.
[7]SJ20788-2000．半导体二极管热阻抗测试方法．中华人民共和国电子行业军用标准．
[8]Y.Xi and E.F.Schubert Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method APPLIED PHYSICS LETTERS VOLUME 85,NUMBER 12 2163-2165.
[9]沈学础．半导体光谱和光学性质．北京：科学出版社，2002．
[10]沈海平，潘建根．LED光谱数学模型及其应用．中国照明学会(2005)学术年会，2005，83-85．
[11]V.Szekely,T.V.Bien.Fine structure of heat flow path in semiconductor devices:a measurement and identification method.Solid-state Electronics,1988,31:1363-1368.
[12]V.Szekely.A new evaluation method of thermal transient measurement results.Microelectronics Journal,1997,28:277-292.
[13]陈维友，杨树人，刘式墉．光电子器件模型与OEIC模拟．北京：国防工业出版，2001．
[14]John W.Sofia.“Electrical temperature measurement using semiconductors”.Website:“http://www.electronicscooling,com.
[15]David Eastley.“Evaluating High-Power LEDs”.Proceedings of Strategies unlimited.San Francisco,California,Feb,2006.
[16]Lianqiao Yang,JianzhengHu,Lan Kim,and MooWhan Shin.“Vitiation of Thermal Resistance with Input Power in LEDs.Phys.Star.Sol.(C)3,No.6,(2006),:2187-2196.
[17]ISO.Guide to the expression of uncertainty in measurement,second edition.1995.
[18]李慎安．测量不确定度表达百问．北京：中国计量出版社，2001．
[19]沈海平．大功率LED可靠性预测机制研究(博士论文)：31-36．
[1]Department of Energy-Energy efficiency and renewable energy,DOE024-1 409.
[2]Muqing Liu,Bifeng Rong,Huub W.M.Salemink ,“Evaluation of LED application in general lighting”,Optical Engineering July 2007,V46/N7,74002-1~6.
[3]J.Y.Tsao,“Solid-State Lighting:Lamp Targets and Implications for the Semiconductor Chip,” IEEE Circuits and Device magazine 8755-3996/04,28-37(2004).
[4]M.G.Craford,“Update on high power LED technology and progress towards solid state lighting” Proc.of 5th China International Forum on Solid state lighting,1~7(comprehensive section),Shenzhen,China,(2008).
[5]David G.Pelkaa,Kavita Patelb,“An Overview of LED Applications for General Illumination”,Proceedings of SPIE Vol.5186,Design of Efficient Illumination Systems,15~26.
[6]Yoshi Ohno,“Spectral design considerations for white LED color rendering”,Optical Engineering 44(11),111302(November 2005).
[7]http://www,lumileds,com,see superflux LEDs.
[8]http://www.cree,com,see X-Bright Plus LED specifications.
[9]International Commission on Illumination,CIE Technical report,Measurement of LEDs,CIE-127:2007.
[10]李文宜，张万路，袁川，刘木清，测量LED总光通量的积分球装置中光源位置的探讨，复旦学报(自然科学版)，Vol．46 No．3，J un．2007，356~359．
[11]Ohno Y and Zong Y.“Detector-based integrating sphere photometry”.in proceeding of 24th Session of the CIE Part 1,(1999):155-160.
[12]Ohno Y,“Spectral design considerations for white LED color rendering,” Optical Engineering 44,111302(2005).
[13]吕正，樊其明，吕亮．LED光通量测量中的自吸收效应及校正．照明工程学报．2006年6月，第17卷第2期：16～18．
[14]周小丽，刘木清等．LED光通量测试系统的研究，光电子．激光，July，2008，V19／N6：728~730．
[15]Y.Xi and E.F.Schubert.“Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method”.APPLIED PHYSICS LETTERS 85/12,2163~2165(Sept.2004).
[16]Application Note ANOSI608a.“In-Situ LED Junction Temperature and Thermal Resistance Measurement”,Vektrex Electronic system Inc.