金刚石/铜复合材料制备的研究
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摘要
随着信息化时代的迅速发展,传统的电子封装材料已经不能满足现代集成电路以及各类电器元件电子封装的发展要求。新型的封装材料要求具备轻质、高热导、低膨胀的性能,金刚石/铜复合材料综合了铜和增强体的优良特性而具有较好的导热和可调的热膨胀系数,具有非常广阔的应用前景。但目前有关该体系的理论研究与应用研究尚不成熟,迫切需要进行更多的探索和研究。
本论文采用粉末冶金工艺(复压复烧工艺、粉末真空包套热锻造工艺及粉末真空包套热挤压工艺)制备以单晶金刚石颗粒为增强体的金刚石/铜复合材料。利用XRD、金相显微镜、扫描电镜对复合材料的微观组织特征进行了研究,并测试了复合材料的热膨胀系数。着重研究了各成形工艺对复合材料致密度的影响,并探讨了热膨胀系数的影响因素。
对于金刚石粒度40μm,体积含量70%的复合材料采用不同的制备工艺得出：复压复烧工艺制备的复合材料在890℃烧结8小时其致密度达到82.82%,其在50-100℃时热膨胀系数达到6.4～7.5×10-6/K；粉末真空包套热锻工艺制备的复合材料其致密度低至79.584-80.692%,热膨胀系数达到11.315-11.647×10-6/K；粉末真空包套热挤压制备的40gm,体积含量70%的复合材料致密度为70.125%,其热膨胀系数达7.864×10-6/K。
通过对热膨胀系数的影响因素分析得出：热膨胀系数随温度的升高和金刚石颗粒度的增加而升高,随金刚石体积分数的增加而降低。
通过对制备出的金刚石/铜复合材料的热膨胀系数进行理论模型计算,发现不同成形工艺所得的复合材料的实验值均高于理论模型的计算值,理论模型中ROM混合规则和Kerner模型的计算值在金刚石体积分数较低的情况下与实测值相对较为接近,当金刚石体积含量增大时模型的计算值低于实测值。
The electronic packaging technology in modern ICs and other electrical components has a specification-advanced demand for packaging materials. Advanced packaging materials demand lightweight, higher thermal conductivity (TC) and lower coefficient of thermal expansion (CTE). Diamond/Cu composites have a promising potential in future application due to their good combination of TC and tailorable CTE. But previous research of Diamond/Cu system is still not satisfied both in the theories and engineering aspects.
Monocrystalline diamond powder was used in present work, Diamond/Cu composites were prepared by powder metallurgy under the different molding process (repressing and re-sintering technology, vacuum packing hot forging technology, vacuum packing hot extrusion technology). The microstructure of the diamond/Cu composites were observed by XRD, Metallurgical Microscopy and SEM methods. The coefficient of thermal expansion and density of composites were measured. The effect of different molding process technology on the density of samples was analyzed. The effects of volume fraction and powder size of diamond on the coefficient of thermal expansion were also discussed.
By analying the densiy and the coefficient thernal expansion of the composites of 40μm 70vol.%diamond/Cu prepared by three different technologies, the results showed that the relative density could be gained to 82.82% and the coefficient thernal expansion 6.4-7.5×10"6/K at 50～100℃prepared by repressing and re-sintering technology (singtering temperature:890℃;singtering time:8h);the relative densiy 79.584～80.692% and the coefficient thernal expansion 11.315～11.647×10-6/K prepared by vacuum packing hot forging technology and the relative densiy 70.125%and the coefficient thernal expansion 7.864×10-6/K prepared by vacuum packing hot extrusion technology.
The coefficient of thermal expansion of the composites were tested and analyzed. The results showed that the coefficient of thermal expansion increased with the temperature lighted, the diamond particle size increased and the volume fraction of diamond reduced
Through theoretical calculation, the coefficient of thermal expansion reduced with the increasing of the relative density of composites, the volume fraction of diamond and the decreasing of diamond particle size were found. Calculation value is smaller in comparison with measured. The experiment data were more closer ROM and Kerner model with lower diamond volume fraction and were higher than throretical data with higher diamong volume fraction.
本论文采用粉末冶金工艺(复压复烧工艺、粉末真空包套热锻造工艺及粉末真空包套热挤压工艺)制备以单晶金刚石颗粒为增强体的金刚石/铜复合材料。利用XRD、金相显微镜、扫描电镜对复合材料的微观组织特征进行了研究,并测试了复合材料的热膨胀系数。着重研究了各成形工艺对复合材料致密度的影响,并探讨了热膨胀系数的影响因素。
对于金刚石粒度40μm,体积含量70%的复合材料采用不同的制备工艺得出：复压复烧工艺制备的复合材料在890℃烧结8小时其致密度达到82.82%,其在50-100℃时热膨胀系数达到6.4～7.5×10-6/K；粉末真空包套热锻工艺制备的复合材料其致密度低至79.584-80.692%,热膨胀系数达到11.315-11.647×10-6/K；粉末真空包套热挤压制备的40gm,体积含量70%的复合材料致密度为70.125%,其热膨胀系数达7.864×10-6/K。
通过对热膨胀系数的影响因素分析得出：热膨胀系数随温度的升高和金刚石颗粒度的增加而升高,随金刚石体积分数的增加而降低。
通过对制备出的金刚石/铜复合材料的热膨胀系数进行理论模型计算,发现不同成形工艺所得的复合材料的实验值均高于理论模型的计算值,理论模型中ROM混合规则和Kerner模型的计算值在金刚石体积分数较低的情况下与实测值相对较为接近,当金刚石体积含量增大时模型的计算值低于实测值。
The electronic packaging technology in modern ICs and other electrical components has a specification-advanced demand for packaging materials. Advanced packaging materials demand lightweight, higher thermal conductivity (TC) and lower coefficient of thermal expansion (CTE). Diamond/Cu composites have a promising potential in future application due to their good combination of TC and tailorable CTE. But previous research of Diamond/Cu system is still not satisfied both in the theories and engineering aspects.
Monocrystalline diamond powder was used in present work, Diamond/Cu composites were prepared by powder metallurgy under the different molding process (repressing and re-sintering technology, vacuum packing hot forging technology, vacuum packing hot extrusion technology). The microstructure of the diamond/Cu composites were observed by XRD, Metallurgical Microscopy and SEM methods. The coefficient of thermal expansion and density of composites were measured. The effect of different molding process technology on the density of samples was analyzed. The effects of volume fraction and powder size of diamond on the coefficient of thermal expansion were also discussed.
By analying the densiy and the coefficient thernal expansion of the composites of 40μm 70vol.%diamond/Cu prepared by three different technologies, the results showed that the relative density could be gained to 82.82% and the coefficient thernal expansion 6.4-7.5×10"6/K at 50～100℃prepared by repressing and re-sintering technology (singtering temperature:890℃;singtering time:8h);the relative densiy 79.584～80.692% and the coefficient thernal expansion 11.315～11.647×10-6/K prepared by vacuum packing hot forging technology and the relative densiy 70.125%and the coefficient thernal expansion 7.864×10-6/K prepared by vacuum packing hot extrusion technology.
The coefficient of thermal expansion of the composites were tested and analyzed. The results showed that the coefficient of thermal expansion increased with the temperature lighted, the diamond particle size increased and the volume fraction of diamond reduced
Through theoretical calculation, the coefficient of thermal expansion reduced with the increasing of the relative density of composites, the volume fraction of diamond and the decreasing of diamond particle size were found. Calculation value is smaller in comparison with measured. The experiment data were more closer ROM and Kerner model with lower diamond volume fraction and were higher than throretical data with higher diamong volume fraction.
引文
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[2]李桂云.微电子封装的发展趋势[J].电子与封装,2003,3(10)：12-14
[3]刘胜.微电子装配及封装技术存在的障碍和需求[J].机械与电子,1998,6：38-41
[4]鲜飞.先进芯片封装技术[J].信息技术与标准化,2003,10：38-41
[5]鲜飞.芯片封装技术的发展趋势[J].中国集成电路,2006,2：73-76
[6]黄强,顾明元.电子封装用金属基复合材料的研究现状[J].电子与封装,2003,3(2)：34-40
[7]卢基存.倒装芯片封装研究：[博士学位论文].上海,复旦大学,1998
[8]Robert Lanzone. Ceramic CSP:options foe a low cost, high density technology[J].Advanced Packaging,1997,(9/10):49-51
[9]周贤良,吴江晖,张建云,等.电子封装用金属基复合材料的研究现状[J].南昌航空工业学院学报.2001,5(1)：11-14
[10]喻学斌,张国定.真空压渗铸造铝基电子封装复合材料研究[J].材料工程.1994,(6)：9-12
[11]D.M. Jacobson. Lightweight electronic packaging technology based on spray formed Si-A1[J]. Powder Metallurgy,2000,43(3):200-202
[12]Jacobson, M. David. Spray-Formed Silicon-Aluminum[J]. Advanced Materials & Proceddes, 2000,(3):36-39
[13]C. Zweben. Metal-Matrix Composites for Electronic Packaging[J]. Journal of the Minerals Metals and Materials Society,1992:44(7):15-23
[14]M. Hunt. Electronic packaging[J]. Materials Engineering.1991,108(1):24-25
[15]张海坡,阮建明.电子封装材料及其技术发展状况[J].粉末冶金材料科学与工程,2003,8(3)：216-223
[16]彩霞,黄卫东,徐步陆,等.电子封装塑封材料中水的形态[J].材料研究学报,2002,16(5)：507-511
[17]宋登元.CVD金刚石薄膜及其在器件封装中的应用[J].半导体杂志,1992,17(2)：40-43
[18]童震松,沈卓身.金属封装材料的现状及发展[J].电子与封装,2005,5(3)：6.15
[19]杨会娟,王志法,王海山,等.电子封装材料的研究现状及发展[J].材料导报,2004,18(6)：86-87
[20]姜国圣,王志法,刘正春,等.高钨钨-铜复合材料的研究现状[J].稀有金属与硬质合金,1999, (1)：39-42
[21]E. Kny. Properties and application of binary pseudoalloy of Cu and refractory metal [C]. Proceedings of the 12th international plansee senumae. Plansee AG. Reutte. May 1989
[22]Qiang Zhang, Guoqin Chen, Gaohui Wu, et al. Property characteristics of an AINp/A1 composite fabricated by squeeze casting technology [J]. Materials Letters,2003,57:1453-1458
[23]R. Couturier, D. Ducret, P.Merle, et al. Elaboration and Characterization of a Metal Matrix Composite:A1/A1N[J]. Journal of the European Ceramic Society,1997,17:1861-1866
[24]M. Zhao, G. H. Wu, D. Z. Zhu, et al. Effects of thermal cycling on mechanical Properties of AINp/Al composite[J].Materials Letters,2004,58:1899-1902
[25]M. Hunt. Aluminum composites come of age[J]. Materials Engineering,1991,108(1):37-40
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