氮化镓基HEMT器件高场退化效应与热学问题研究
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摘要
本文针对氮化镓（GaN）基高电子迁移率晶体管（HEMTs）的高场退化效应以及器件中的热学问题展开研究。
论文首先通过设计恒定应力-恢复实验以及阶梯应力-恢复实验，对GaN基HEMT器件的高场退化效应进行研究。通过对器件直流特性、光照恢复特性以及陷阱俘获-释放行为的比较，发现器件在不同的应力条件下存在不同的主导退化机制（而非单一机制）。对器件分别施加关态漏阶梯应力、VDS=0关态栅阶梯应力以及开态漏阶梯应力分析器件在高场下的关键行为，并在此基础上提出了热电子驱动的电子俘获机制与电场驱动的逆压电极化机制的耦合模型：在高输出功率情况下热电子驱动的电子俘获机制起主导作用，而在高场情况下（关态、VDS=0V、VGS<0V）电场驱动的逆压电极化效应更为显著。之后，提出了一种利用栅泄漏电流区分两种主要退化机制的方法。
论文系统地研究了高温环境对AlGaN/GaN HEMT器件欧姆接触、肖特基接触、直流特性以及交流特性的影响，并给出了器件特性变化的可能机制。对欧姆接触的研究表明，欧姆接触金属化具有良好的高温稳定性；相对来讲，肖特基接触对温度更为敏感，本文基于陷阱辅助的Frenkel-Poole（FP）发射模型解释了高温下栅泄漏电流明显增加的机理，并得到合理的物理参数；研究发现，随着环境温度的升高，器件的最大饱和电流、跨导峰值和阈值电压有所漂移，这些参数的漂移主要因为高温下载流子迁移率和2DEG面密度变化所导致；论文对器件交流特性的研究表明，高温过程不会在器件中产生新的陷阱，但会使AlGaN势垒层中固有陷阱的活性增强。
论文从电容特性、直流特性、交流特性以及频率特性等角度研究了高温存储对AlGaN/GaN HEMT器件的影响，发现了热存储有时会减小势垒层的有效厚度，例如在96小时250℃热存储前后的势垒层有效厚度减小近3nm；通过电导-频率法对器件的陷阱效应进行研究，得到热存储前的界面态密度Dit=(0.42~2.18)×1012cm-2eV-1，界面态时常数τit=(3.63~0.19)μs；96小时250℃热存储后的界面态密度减小到Dit=(0.27~1.83)×1012cm-2eV-1，界面态时常数τit=(3.65~0.12)μs，界面态密度明显降低。本文从陷阱的角度解释了热存储对器件界面特性的改善作用，这是由于高温存储形成了更为理想和紧密的肖特基接触，同时降低了栅下方的界面态密度，在两者的共同作用下，栅泄漏电流减小、击穿电压提高；热存储后器件的电流崩塌效应与栅延迟特性也得到较好的控制，体现了热存储对器件中界面态的抑制作用；此外，热存储对器件的频率特性没有明显的影响。之后将研究转向大栅宽器件，结果表明热存储对小栅宽器件的作用规律同样适用于大栅宽器件；最后对热存储条件进行了优化，24小时250℃热存储可以有效减小器件在后续工作中的参数漂移，起到固化器件的作用，是较为合理的热存储条件。
论文实现了对多指栅AlGaN/GaN HEMT器件结温的测量。在排除逆压电偏置影响的前提下，利用微区拉曼技术对多指栅AlGaN/GaN HEMT器件在工作条件下的结温进行测量并完成对器件结-壳热阻的分析与计算。结果表明，自主研制的AlGaN/GaN HEMT器件结-壳热阻Rjc=2.62℃/W，与国内外目前文献所报道的GaN基HEMT器件的热阻相比已达到先进水平；对多指栅AlGaN/GaN HEMT器件中横向与纵向温度分布的研究，加深了对器件中热量产生位置与传播途径的理解。这对于预测器件寿命和优化器件版图结构，进而缓解大栅宽微波功率器件的自热效应具有非常重要的意义。
论文建立了多指栅AlGaN/GaN HEMT器件的三维电-热模型。模型计入了材料热导率对温度的非线性影响，将2D电-热模型得到的焦耳热功率密度分布作为3D有限元模型的热源，通过求解稳态热传导方程，得到器件在工作情况下的温度分布细节。之后用微区拉曼结温测量结果对模型进行验证，两种方法的结果很好的吻合，验证了模型中器件参数的合理性。在此基础上，对多指栅AlGaN/GaNHEMT器件各层材料的热阻进行分解，模型得到的器件结-壳热阻与微区拉曼技术测试结果相比误差低于4%。最后，利用该模型对影响器件结温的关键因素进行分析，综合考虑散热、面积和功率特性等因素，总结了降低器件结温/热阻的有效措施，并提出针对多指栅AlGaN/GaN HEMT器件的热设计方案。
High electric-field degradation effects and thermal issues of GaN based highelectron mobility transistors (HEMTs) are investigated in this dissertation.
Firstly, high electric-field degradation effects of GaN based HEMT areinvestigated by designing of constant stress-recovery and step stress-recovery schemes.Comparison of DC characteristics, light recovery characteristics and trapping-releasebehavior of the device shows that the dominant degradation mechanism under thespecific on-state stress differs from that of the off-state stress condition. Off-state drainstep stress, VDS=0gate step stress and on-state drain step stress are applied respectivelyto investigate the critical behavior of device under high electric-field. A coupled modelbased on the electron capture mechanism (hot-electron-driven) and the inversepiezoelectric polarization mechanism (electric field driven) is proposed to explain theobserved device degradation. The distinction of the two leading electrical degradationmechanisms is achieved by switch of gate leakage current behavior. The electroncapture mechanism plays a leading role when the device is biased at high output power,while in the case of high-field (Off state, VDS=0V, VGS<0V) the inverse piezoelectricpolarization effect is believed to be dominant.
High-temperature characteristics of AlGaN/GaN HEMTs including ohmic contact,Schottky contact, DC and AC characteristics are studied systematically and possibledegradation mechanisms are proposed to explain the various degradation phenomenon.The specific contact resistance keeps constant as temperature increases, which showsexcellent stability of the ohmic contact metallization under high temperatureenvironment. Trap-assisted Frenkel-Poole (FP) emission model can explain a significantincrease in gate leakage current at higher temperature and get reasonable physicalparameters. The saturation drain current and the peak trans-conductance decrease withthe increasing temperature, which is mainly due to the reduction in the2DEG mobilityand the decrease in the2DEG density. Our study on the conductance-frequency and thegate-lag characteristics reveals that no new trap is generated in the AlGaN/GaN HEMT,while the activity of the original trap in the AlGaN barrier is enhanced as thetemperature increases, which contributes to the electron escaping from the traps in thebarrier layer, thus suppresses the depletion effect of the trapped electrons to the channeland eventually leads to the weakening of the current collapse.
The thermal storage reliability of AlGaN/GaN HEMTs is investigated fromcapacitance, DC, AC and frequency characteristic aspects. It is found that thermalstorage can reduce the effective thickness of the AlGaN barrier layer. Through thestorage of250℃and96hours, the effective thickness of the AlGaN barrier decreasesfrom25.7nm to22.8nm. The density and time constant of interface state traps ofdevices before and after thermal storage are obtained by Gp-ω calculation. It can be seenthat the interface state density is reduced significantly, and explain the improvement ofthermal storage on device interface characteristics. More ideal and intimate the Schottkycontact is formed due to high temperature storage, while removing the interface statedensity beneath the gate, thus reduce the gate leakage current increase the breakdownvoltage. Current collapse and gate-lag characteristics are suppressed after storage, whichimplies the inhibitory effect of thermal storage on the interface states. In addition,thermal treatment has no significant effect on the frequency characteristic of device.Research on the multi-finger devices shows that the principles of thermal storage ondevice with100μm gate width also applies to the multi-finger devices. Finally, thethermal storage condition is optimized,250℃and24hours heat storage plays the roleof the curing device and can effectively reduce the device parameter drift in thefollow-up work.
By excluding the inverse piezoelectric bias, micro-Raman spectroscopy issuccessfully employed to measure the channel temperature of multi-finger AlGaN/GaNHEMT under operation. Then, the junction to case thermal resistance is calculated,compared to that of devices reported in current literature, our device has reached anadvanced level (Rjc=2.62℃/W). Research on the horizontal and vertical temperaturedistribution through the device enhances our understanding on the heat generationlocation and the transmission mode, which is of great importance for predicting thelifetime and to optimize the layout structure, and thus alleviate the self-heating effect inthe multi-finger microwave power devices.
A coupled electro-thermal model is constructed to describe detailed electrical andthermal behavior of multi-finger AlGaN/GaN HEMTs in this paper. The model takesthe2DEG transport characteristic, the Joule heating power distribution and thenonlinear relationship of material thermal conductivity with temperature into account.The results reveal excellent correlation to the micro-Raman measurements, validatingour model for the design of better cooled structures. Furthermore, the influence oflayout design on the channel temperature of multi-finger AlGaN/GaN HEMT is studied using the proposed electro-thermal model, results indicates that parameters such as thenumber of fingers, finger width, and spacing are critical factors for thermal managementconsiderations and reasonable optimization methods for layout design are suggested toeliminate the self-heating effects.
论文首先通过设计恒定应力-恢复实验以及阶梯应力-恢复实验，对GaN基HEMT器件的高场退化效应进行研究。通过对器件直流特性、光照恢复特性以及陷阱俘获-释放行为的比较，发现器件在不同的应力条件下存在不同的主导退化机制（而非单一机制）。对器件分别施加关态漏阶梯应力、VDS=0关态栅阶梯应力以及开态漏阶梯应力分析器件在高场下的关键行为，并在此基础上提出了热电子驱动的电子俘获机制与电场驱动的逆压电极化机制的耦合模型：在高输出功率情况下热电子驱动的电子俘获机制起主导作用，而在高场情况下（关态、VDS=0V、VGS<0V）电场驱动的逆压电极化效应更为显著。之后，提出了一种利用栅泄漏电流区分两种主要退化机制的方法。
论文系统地研究了高温环境对AlGaN/GaN HEMT器件欧姆接触、肖特基接触、直流特性以及交流特性的影响，并给出了器件特性变化的可能机制。对欧姆接触的研究表明，欧姆接触金属化具有良好的高温稳定性；相对来讲，肖特基接触对温度更为敏感，本文基于陷阱辅助的Frenkel-Poole（FP）发射模型解释了高温下栅泄漏电流明显增加的机理，并得到合理的物理参数；研究发现，随着环境温度的升高，器件的最大饱和电流、跨导峰值和阈值电压有所漂移，这些参数的漂移主要因为高温下载流子迁移率和2DEG面密度变化所导致；论文对器件交流特性的研究表明，高温过程不会在器件中产生新的陷阱，但会使AlGaN势垒层中固有陷阱的活性增强。
论文从电容特性、直流特性、交流特性以及频率特性等角度研究了高温存储对AlGaN/GaN HEMT器件的影响，发现了热存储有时会减小势垒层的有效厚度，例如在96小时250℃热存储前后的势垒层有效厚度减小近3nm；通过电导-频率法对器件的陷阱效应进行研究，得到热存储前的界面态密度Dit=(0.42~2.18)×1012cm-2eV-1，界面态时常数τit=(3.63~0.19)μs；96小时250℃热存储后的界面态密度减小到Dit=(0.27~1.83)×1012cm-2eV-1，界面态时常数τit=(3.65~0.12)μs，界面态密度明显降低。本文从陷阱的角度解释了热存储对器件界面特性的改善作用，这是由于高温存储形成了更为理想和紧密的肖特基接触，同时降低了栅下方的界面态密度，在两者的共同作用下，栅泄漏电流减小、击穿电压提高；热存储后器件的电流崩塌效应与栅延迟特性也得到较好的控制，体现了热存储对器件中界面态的抑制作用；此外，热存储对器件的频率特性没有明显的影响。之后将研究转向大栅宽器件，结果表明热存储对小栅宽器件的作用规律同样适用于大栅宽器件；最后对热存储条件进行了优化，24小时250℃热存储可以有效减小器件在后续工作中的参数漂移，起到固化器件的作用，是较为合理的热存储条件。
论文实现了对多指栅AlGaN/GaN HEMT器件结温的测量。在排除逆压电偏置影响的前提下，利用微区拉曼技术对多指栅AlGaN/GaN HEMT器件在工作条件下的结温进行测量并完成对器件结-壳热阻的分析与计算。结果表明，自主研制的AlGaN/GaN HEMT器件结-壳热阻Rjc=2.62℃/W，与国内外目前文献所报道的GaN基HEMT器件的热阻相比已达到先进水平；对多指栅AlGaN/GaN HEMT器件中横向与纵向温度分布的研究，加深了对器件中热量产生位置与传播途径的理解。这对于预测器件寿命和优化器件版图结构，进而缓解大栅宽微波功率器件的自热效应具有非常重要的意义。
论文建立了多指栅AlGaN/GaN HEMT器件的三维电-热模型。模型计入了材料热导率对温度的非线性影响，将2D电-热模型得到的焦耳热功率密度分布作为3D有限元模型的热源，通过求解稳态热传导方程，得到器件在工作情况下的温度分布细节。之后用微区拉曼结温测量结果对模型进行验证，两种方法的结果很好的吻合，验证了模型中器件参数的合理性。在此基础上，对多指栅AlGaN/GaNHEMT器件各层材料的热阻进行分解，模型得到的器件结-壳热阻与微区拉曼技术测试结果相比误差低于4%。最后，利用该模型对影响器件结温的关键因素进行分析，综合考虑散热、面积和功率特性等因素，总结了降低器件结温/热阻的有效措施，并提出针对多指栅AlGaN/GaN HEMT器件的热设计方案。
High electric-field degradation effects and thermal issues of GaN based highelectron mobility transistors (HEMTs) are investigated in this dissertation.
Firstly, high electric-field degradation effects of GaN based HEMT areinvestigated by designing of constant stress-recovery and step stress-recovery schemes.Comparison of DC characteristics, light recovery characteristics and trapping-releasebehavior of the device shows that the dominant degradation mechanism under thespecific on-state stress differs from that of the off-state stress condition. Off-state drainstep stress, VDS=0gate step stress and on-state drain step stress are applied respectivelyto investigate the critical behavior of device under high electric-field. A coupled modelbased on the electron capture mechanism (hot-electron-driven) and the inversepiezoelectric polarization mechanism (electric field driven) is proposed to explain theobserved device degradation. The distinction of the two leading electrical degradationmechanisms is achieved by switch of gate leakage current behavior. The electroncapture mechanism plays a leading role when the device is biased at high output power,while in the case of high-field (Off state, VDS=0V, VGS<0V) the inverse piezoelectricpolarization effect is believed to be dominant.
High-temperature characteristics of AlGaN/GaN HEMTs including ohmic contact,Schottky contact, DC and AC characteristics are studied systematically and possibledegradation mechanisms are proposed to explain the various degradation phenomenon.The specific contact resistance keeps constant as temperature increases, which showsexcellent stability of the ohmic contact metallization under high temperatureenvironment. Trap-assisted Frenkel-Poole (FP) emission model can explain a significantincrease in gate leakage current at higher temperature and get reasonable physicalparameters. The saturation drain current and the peak trans-conductance decrease withthe increasing temperature, which is mainly due to the reduction in the2DEG mobilityand the decrease in the2DEG density. Our study on the conductance-frequency and thegate-lag characteristics reveals that no new trap is generated in the AlGaN/GaN HEMT,while the activity of the original trap in the AlGaN barrier is enhanced as thetemperature increases, which contributes to the electron escaping from the traps in thebarrier layer, thus suppresses the depletion effect of the trapped electrons to the channeland eventually leads to the weakening of the current collapse.
The thermal storage reliability of AlGaN/GaN HEMTs is investigated fromcapacitance, DC, AC and frequency characteristic aspects. It is found that thermalstorage can reduce the effective thickness of the AlGaN barrier layer. Through thestorage of250℃and96hours, the effective thickness of the AlGaN barrier decreasesfrom25.7nm to22.8nm. The density and time constant of interface state traps ofdevices before and after thermal storage are obtained by Gp-ω calculation. It can be seenthat the interface state density is reduced significantly, and explain the improvement ofthermal storage on device interface characteristics. More ideal and intimate the Schottkycontact is formed due to high temperature storage, while removing the interface statedensity beneath the gate, thus reduce the gate leakage current increase the breakdownvoltage. Current collapse and gate-lag characteristics are suppressed after storage, whichimplies the inhibitory effect of thermal storage on the interface states. In addition,thermal treatment has no significant effect on the frequency characteristic of device.Research on the multi-finger devices shows that the principles of thermal storage ondevice with100μm gate width also applies to the multi-finger devices. Finally, thethermal storage condition is optimized,250℃and24hours heat storage plays the roleof the curing device and can effectively reduce the device parameter drift in thefollow-up work.
By excluding the inverse piezoelectric bias, micro-Raman spectroscopy issuccessfully employed to measure the channel temperature of multi-finger AlGaN/GaNHEMT under operation. Then, the junction to case thermal resistance is calculated,compared to that of devices reported in current literature, our device has reached anadvanced level (Rjc=2.62℃/W). Research on the horizontal and vertical temperaturedistribution through the device enhances our understanding on the heat generationlocation and the transmission mode, which is of great importance for predicting thelifetime and to optimize the layout structure, and thus alleviate the self-heating effect inthe multi-finger microwave power devices.
A coupled electro-thermal model is constructed to describe detailed electrical andthermal behavior of multi-finger AlGaN/GaN HEMTs in this paper. The model takesthe2DEG transport characteristic, the Joule heating power distribution and thenonlinear relationship of material thermal conductivity with temperature into account.The results reveal excellent correlation to the micro-Raman measurements, validatingour model for the design of better cooled structures. Furthermore, the influence oflayout design on the channel temperature of multi-finger AlGaN/GaN HEMT is studied using the proposed electro-thermal model, results indicates that parameters such as thenumber of fingers, finger width, and spacing are critical factors for thermal managementconsiderations and reasonable optimization methods for layout design are suggested toeliminate the self-heating effects.
引文
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