大功率半导体器件在脉冲放电环境下的导通机理及其温度特性的研究
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摘要
脉冲功率源技术是各种新概念武器包括电磁发射的基础技术。其作用是向其发射平台提供大容量、高电压、大电流和高能量密度的电能。随着脉冲功率源小型化、模块化的发展趋势,对其重要组成部分——大功率半导体器件有了更高的要求。因为在脉冲浪涌放电环境下,器件要承受高电压、大电流和高的电流上升率等工作特点,工作环境非常恶劣,其工频环境下的技术参数已经不能准确反应其在该环境下的工作情况,浪涌参数才是需要重点研究的技术指标。本文正是基于此应用背景下研究大功率半导体器件,文章的主要工作有以下几点:
首先,介绍脉冲功率源系统的基本概念,实验装置和技术特点,并由单模块PFN脉冲成形网络列出状态方程并推广到一般情况,介绍引出本文所要研究的大功率半导体器件。
其次,以大功率可控硅为代表,理论上分析其导通机理及其动态特性参数的相互影响,从半导体物理的角度分析大功率可控硅在浪涌放电环境下的承受能力。
然后,在脉冲功率源放电实验中,测试系统脉冲大电流,大功率器件的动态参数,并通过实验数据分析其在脉冲环境下的动态特性。
最后,分析大功率半导体器件损坏的失效模式和常见的外应力,研究在脉冲功率源系统环境下,大功率续流硅堆的温度特性,通过实验分析器件芯片结温和管片温度之间的相互联系。
通过本文,对大功率半导体器件在脉冲浪涌放电环境的的动态特性及其温度特性进行了系统的分析研究,对脉冲功率电源模块的设计具有一定的指导意义。
Pulsed power technology is the basic technology of electromagnetic launch. Its role is to provide high-capacity, high-voltage, high current and high energy density of power to launch platform. At present, the development trend of pulsed power technology is miniaturization and modularization. As an important part of pulsed power technology, high-power semiconductor devices are working surge in pulse discharge environment, the main references at this time are no longer under its usual technical parameters, but its surge environment technical parameters. The systematic research is about the characteristic of pluse for high power semiconductor. The main works are as fellows:
First, introduced on the basic concept of experimental equipment and technical characteristics. By means of theoretical analysis the theory of high-power semiconductor devices in pulse forming network features, extended the equation of state under normal circumstances, this leads to the study of high-power semiconductor devices.
Secondly, select SCR as the representative to high power semiconductor, research its mechanism and its on-dynamic parameters of the mutual impact in theory. Analyse high power SCR which surge in the discharge environment sustainability from semiconductor physics.
Then, in the discharge of pulsed power source, test the large current pulse, the dynamic parameters of high-power semiconductor devices. Analyse their experimental data in the pulse of the dynamic environment.
Finally, analyse the failure modes and common stress of high-power semiconductor devices, research its temperature characterisitic in pulsed power source system environment. Through this dissertation, a research has been made on the high-power semiconductor devices in the discharge pulse surge to the dynamic nature of the environment and temperature characteristics of the system, which has a guiding significance on the design of pulsed power supply module.
首先,介绍脉冲功率源系统的基本概念,实验装置和技术特点,并由单模块PFN脉冲成形网络列出状态方程并推广到一般情况,介绍引出本文所要研究的大功率半导体器件。
其次,以大功率可控硅为代表,理论上分析其导通机理及其动态特性参数的相互影响,从半导体物理的角度分析大功率可控硅在浪涌放电环境下的承受能力。
然后,在脉冲功率源放电实验中,测试系统脉冲大电流,大功率器件的动态参数,并通过实验数据分析其在脉冲环境下的动态特性。
最后,分析大功率半导体器件损坏的失效模式和常见的外应力,研究在脉冲功率源系统环境下,大功率续流硅堆的温度特性,通过实验分析器件芯片结温和管片温度之间的相互联系。
通过本文,对大功率半导体器件在脉冲浪涌放电环境的的动态特性及其温度特性进行了系统的分析研究,对脉冲功率电源模块的设计具有一定的指导意义。
Pulsed power technology is the basic technology of electromagnetic launch. Its role is to provide high-capacity, high-voltage, high current and high energy density of power to launch platform. At present, the development trend of pulsed power technology is miniaturization and modularization. As an important part of pulsed power technology, high-power semiconductor devices are working surge in pulse discharge environment, the main references at this time are no longer under its usual technical parameters, but its surge environment technical parameters. The systematic research is about the characteristic of pluse for high power semiconductor. The main works are as fellows:
First, introduced on the basic concept of experimental equipment and technical characteristics. By means of theoretical analysis the theory of high-power semiconductor devices in pulse forming network features, extended the equation of state under normal circumstances, this leads to the study of high-power semiconductor devices.
Secondly, select SCR as the representative to high power semiconductor, research its mechanism and its on-dynamic parameters of the mutual impact in theory. Analyse high power SCR which surge in the discharge environment sustainability from semiconductor physics.
Then, in the discharge of pulsed power source, test the large current pulse, the dynamic parameters of high-power semiconductor devices. Analyse their experimental data in the pulse of the dynamic environment.
Finally, analyse the failure modes and common stress of high-power semiconductor devices, research its temperature characterisitic in pulsed power source system environment. Through this dissertation, a research has been made on the high-power semiconductor devices in the discharge pulse surge to the dynamic nature of the environment and temperature characteristics of the system, which has a guiding significance on the design of pulsed power supply module.
引文
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[23]何孟兵,李劲,姚宗干.高功率脉冲放电间隙开关综述.高电压技术,2000(4):33-35
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