Co/Cu多层膜层间耦合作用的调节
|
摘要
多层膜的层间耦合作用在巨磁电阻效应的自旋电子学器件中有着广泛应用,已经成为国际研究的热点。在GMR和TMR的物理、材料和技术应用中,铁磁层和反铁磁层间的耦合作用起着至关重要的作用。本文研究了[Co/Cu]多层膜体系的耦合作用和磁性能及其影响因素。
采用了磁控溅射的方法制备了Fe(50(?))/[Co/Cu] _(30)多层膜,多层膜在层间耦合作用振荡的第二峰时的磁电阻能达到15%,退火处理后可以达到18%。没有Fe缓冲层时的磁电阻比有Fe缓冲层时的磁电阻要小,缓冲层影响薄膜的生长和织构,从而影响多层膜的层间耦合作用。
为了提高多层膜的磁灵敏度,在Fe(50(?))/[Co/Cu]_(30)多层膜的隔离层(Cu)中掺入磁性元素Co,引入与相邻Co层之间反铁磁的RKKY作用相竞争的直接的铁磁耦合作用,降低了相邻Co层间的交换耦合作用。层间耦合作用强度由掺入8at%Co时的0.05erg/cm2降到掺入_(30)at%Co时的0.025erg/cm2,饱和磁场有所降低,从而提高了多层膜对外磁场变化的灵敏度。
对一组Fe(50(?))/[Co/Co(_(30)at%)Cu(70at%)]_(30)样品在_(30)0℃进行两个小时退火处理,测量XRD结果显示,多层膜织构得到优化,层间反铁磁耦合作用变弱。
Exchange coupling in multilayers across their common interface, due to its intriguing physics and the key role in giant magnetoresistance effect spintronic devices, has attracted a great deal of attention in recent years. Ferromagnetic and antiferromagnetic exchange coupling play an important part in GMR and TMR application in physics ,material and technology.In this dissertation, we studied on the exchange coupling and magnetic fuction in Co/Cu mutilayers system.
The Fe(50(?))/[Co/Cu] _(30) multilayers have been prepared by using DC magnetron sputtering. The GMR of this multilayers could reach fifteen percent at the second peak of interlayer exchange coupling,and reach eighteen percent after annealing.The GMR of multilayers without Fe buffer is less than the one with Fe buffer,and for it’s effect on the growth and configuration of films the interlayer exchange coupling have been affected.
For the sake of increase the sensitivity to magnetic field, magnetic element for instant Co have been blended in the spacer Cu in Fe(50(?))/[Co/Cu]_(30) multilayers and direct ferromagnetic coupling has been introduced to compete with the antiferromagnetic RKKY of adjacent Co layers,so exchange coupling in adjacent Co layers have been depressed.The interlayer coupling is 0.05erg/cm2 with 8at% Co blending and 0.025erg/cm2with 8at% Co blending,so it have depressed with increasing the Co quantity. By changing the amount of magnetic element in the spacers,the saturation magnetic field has been weaken in multilayers and multilayers become more sensitive to external magnetic field.If 8at% Co was blended in the multilayers,the sensitivity of the multilayers to external magnetic field have improved 25% in saturation magnetic field.
The sample Fe(50(?))/[Co/Co(x)Cu(1-x)]_(30) has been disposed by annealing.After two hours annealing,the structure of multilayers have been optimized by XRD and the antiferromagnetic coupling have been weaken.
采用了磁控溅射的方法制备了Fe(50(?))/[Co/Cu] _(30)多层膜,多层膜在层间耦合作用振荡的第二峰时的磁电阻能达到15%,退火处理后可以达到18%。没有Fe缓冲层时的磁电阻比有Fe缓冲层时的磁电阻要小,缓冲层影响薄膜的生长和织构,从而影响多层膜的层间耦合作用。
为了提高多层膜的磁灵敏度,在Fe(50(?))/[Co/Cu]_(30)多层膜的隔离层(Cu)中掺入磁性元素Co,引入与相邻Co层之间反铁磁的RKKY作用相竞争的直接的铁磁耦合作用,降低了相邻Co层间的交换耦合作用。层间耦合作用强度由掺入8at%Co时的0.05erg/cm2降到掺入_(30)at%Co时的0.025erg/cm2,饱和磁场有所降低,从而提高了多层膜对外磁场变化的灵敏度。
对一组Fe(50(?))/[Co/Co(_(30)at%)Cu(70at%)]_(30)样品在_(30)0℃进行两个小时退火处理,测量XRD结果显示,多层膜织构得到优化,层间反铁磁耦合作用变弱。
Exchange coupling in multilayers across their common interface, due to its intriguing physics and the key role in giant magnetoresistance effect spintronic devices, has attracted a great deal of attention in recent years. Ferromagnetic and antiferromagnetic exchange coupling play an important part in GMR and TMR application in physics ,material and technology.In this dissertation, we studied on the exchange coupling and magnetic fuction in Co/Cu mutilayers system.
The Fe(50(?))/[Co/Cu] _(30) multilayers have been prepared by using DC magnetron sputtering. The GMR of this multilayers could reach fifteen percent at the second peak of interlayer exchange coupling,and reach eighteen percent after annealing.The GMR of multilayers without Fe buffer is less than the one with Fe buffer,and for it’s effect on the growth and configuration of films the interlayer exchange coupling have been affected.
For the sake of increase the sensitivity to magnetic field, magnetic element for instant Co have been blended in the spacer Cu in Fe(50(?))/[Co/Cu]_(30) multilayers and direct ferromagnetic coupling has been introduced to compete with the antiferromagnetic RKKY of adjacent Co layers,so exchange coupling in adjacent Co layers have been depressed.The interlayer coupling is 0.05erg/cm2 with 8at% Co blending and 0.025erg/cm2with 8at% Co blending,so it have depressed with increasing the Co quantity. By changing the amount of magnetic element in the spacers,the saturation magnetic field has been weaken in multilayers and multilayers become more sensitive to external magnetic field.If 8at% Co was blended in the multilayers,the sensitivity of the multilayers to external magnetic field have improved 25% in saturation magnetic field.
The sample Fe(50(?))/[Co/Co(x)Cu(1-x)]_(30) has been disposed by annealing.After two hours annealing,the structure of multilayers have been optimized by XRD and the antiferromagnetic coupling have been weaken.
引文
[1] W .Thomson,Proc.Roy.Soc.S (1857)546.
[2]M.N.Baibisch et al.Phys.Rev. Lett.61(1988) 2472.G.B.inasch et al. ,Phys. Rev. B 39 (1989)4828.
[3]S. A. Wolf, D. D. Awschalom, R. A. Buhrman et al . A Spin-Based Electronics Vision for the Future.[J]. Science,2001,294:1488-1495.
[4]A. Barthelemy et al.Magnetoresistance and spin electronics.[J].J Magn Magn Mater,2002,242-245:68-76.
[5]J.N.Chapman,J.Rose et al.Magnetization processes in Co/Cu multilayers with low magnetoresistive hysteresis.[J]. J Appl Phys,1999, 86: 1611-1620.
[6]B.Skubic,E.Holmstrometal.Competing Exchange Interactions in Mangnetic Multilayers.[J]. Phys Rev Lett, 2006, 96:057205 .
[7]S.S.P.Parkin,R.Bhadra,and K.P.Roche.Oscillatory Magnetic Exchange Coupling through Thin Copper Layers.[J]. Phys Rev Lett,1991,66:2152-2155.
[8]K.Bouziane,A.D.Al Rawas et al.Buffer effect on GMR in thin Co/Cu multilayers.[J].Journal of Alloys and Compounds, 2006,414:42-46.
[9]A.B.Pippard,《Magnetoresistance in Metals》( Cambridge University Press,Cambridge,1989)
[10]W.F.Leverton and A.J.Dekker,Phys.Rev.,80,1950:732;81,1951:156
[11]J.Babiskin,Osillatory galvanomagnetic properties of bismuth single crystals in longitudinal magnetic fields.Phys.Rev.,107,1957:981
[12] J.Simt,Physica,XV1,1951:612
[13]Mcguire T R,Potter R I.Anisotropic magnetoresistance in ferromagnetic 3d alloys.IEEE Trans Magn,1975,11:1018 ~ 1038
[14] Parkin S S P,Li Z G,Smith D J.Giant magnetoresistance in antiferromagnetic Co/Cu multilayers.Appl Phys Lett,1991,58:2710 ~ 2712
[15]Dieny B,Speriosu V S,Parkin S S Petal.Giant magnetoresistance in soft ferromagnetic multilayers.Phys Rev B,1991,43:1297 ~ 1300
[16] Miyazaki T,Yaoi T,S Ishio.J Magn Magn Mater,1991,98:7
[17]Miyazaki T,Tezuka N. J Magn Magn Mater,1995,151:403 ~ 410
[18] Sato M,Kikuchi H,Kobayashi K.J Appl Phys,1998,83:6691
[19] Xiong G. C,Li Q,Ju H L et al.Appl Phys Lett,1995,66:1427 ~ 1429
[20] Liu K,Wu X W,Ahn K H et tal. Phys Rev B,1996,54:3007
[21] P. Grdnberg,RSchreiber,Y.Pang,et al.,Phys.Rev.Lett.57(1986)2442
[22] M.N.Baibich,J. M.Broto, A. Fert et al,Phys.Rev.Lett.,61(1988)2472
[23] P. Granberg. et al. , P hy s. R ev. B54 (1996) 1199.
[24] M. L. Yan et al. , J. A pp l. P hy s. 74 (1995) 1816
[25]C. T. Yu et al. , P hy s. R ev. B52 (1995) 1123
[26] Q. Y. J in et al. , J. M ag n. M ag n. M at. 140—144 (1995) 565
[27]A.Fert,et.al.B.HeinrichandJ.A.C.Bland,Spring Verlag,Berlin Heidelberg,1994 ,Vo l.ê, P. 45
[28]S. S. P. Park.Ultrath in Magnetic Structures, 1994,Vo l.ê, P. 148
[29]蔡建旺,赵见高,詹文山,沈保根.磁电子学中的若干问题.物理学进展,1997,17:119 ~ 149
[30]M .Rdhrig,R.Sch~/fer,A.Hubert,R.Mosler,J.A.Wo1f.S.Demokritov andP.GrunbergPhys.Status Solidi A125(1 991)635;A.Fuss,S.Demokritov,P.Grunberg and W.Zinn,J .Magn.Magn.M ater.103(1992)L221.
[31]J.C.Slonczewski,J.ApL.Phys.73(1993)595
[32]M.L.Watson,W.D.Doyle and H.Fujiwara,J.Appl.73(1993)551
[33]E.veu,C.Dupas,D.Renard,J.P.Renard and J.Seider,Phys.Rev.B37 (1988)668.
[34]D.H.Mosca,A.Barthelemy,F.Petroff,A.Fert,P.A.Schroeder,W.P.Pratt,Jr.,R.Laloee and R.Cabanel,J.Magn.Magn.Mater.93 (1990)480-
[35]B.Dicny,V.S.Speriou,S.S.P.Parkin,B.A.Gurney D.R.Wilhoit and D.Mauri,Phys.Rev.B43(1991)1297.
[36]T.C.Anthony,J.A.Brug and S.Zhang,IEEE Trans.Magn.30(1994)3819.
[37]P.P.Freitas,J.L.Leal,L.V.Melo,N.J.Oliveira,L.Rodrigues and A.T.Sousa,Appl,Phys.Lett.65(1994)403.
[38]S.S.P.Parkin,Phys.Rev.Lett.71(1993)1641.
[39]T.Shinjo.andH.mamoto,J.Phys.Soc.Jpn.59(1990)3061;H.Yamamoto,T.Okuyama. H.Dohnomae and T.Shinjo,J.Magn.Magn.Mater.99(1991)243.
[40]A.Chaiken,P.Lubitz,J.J.Krebs,G.A.Prinz and M.z.Harford,Appl. Phys.Lett.59(1991)240.
[41] T.Valet,J.C.Jacquet,P.Galtier,J.M.Coutelliert L.G.Pereira,R.Morel,D.Lotties and A.Pertt,Appt.Phys.Lett.61(1992)3187.
[42] D.Miyauchi and S.Araki.Appl.Phys.Lett.63 (1993)1702.
[43] H.Sakakima and M .Satomit J App1.Phys.33 (1994)L1668.
[44]M.Jinmbt K.Komiyama and H.Matue,Jpn.J.Appl.Phys.34(1995)L112.
[45]BaibichM N , B ro to J M , Fert A ,et al.Giant magnetoresistance of (001)Fe/( 001) Cr magnetic superlattices. P hys R ev Lett, 1988; 61 (21) : 2472
[46]魏朝刚,任天令,朱钧等.固体电子学研究与进展.2003,23:376-383
[47]Osofsky M.Spin-injection. Journal of Superconductivity : Incorporating Novel Magnetism , 2000; 13 (2) :209
[48]Fiederling R,Keim M,Reuscher G,et al.Injectionand detection of a sp-inpolarized current in a light-emitting diode. Nature, 1999; 402: 787
[1]L.I.Maissel and R.Glang,Handbook of Thin Film Technology(McGraw-Hill,New York,1929)
[2]J. W. Matthews, Epitaxial Growth, Acdademic Press, New York, 1975
[3]田民波,刘德令,“薄膜科学与技术手册”,机械工业出版社,1991
[4]达道安,“真空设计手册”,国防工业出版社,1992
[5]金曾孙,“薄膜制备技术及其应用”,吉林大学出版社,1989
[6]金原粲等,“薄膜”,王力衡等译,电子工业出版社,1988
[7]小沼光晴,“等离子体及成膜基础”,张光华译,国防工业出版社,1994
[8]高技术新材料要览编辑委员会,“高技术新材料要览”,中国科学技术出版社,1993
[9]唐伟忠,“薄膜材料制备原理,技术及应用”,冶金工业出版社,1998
[10] Masahiko Naoe et al., J. Mag. Mag. Mat. 395,1994:134
[11] P. N. Argyres, Phys. Rev. 97, 1955:334
[12]Arthur Uhlir Jr.The potentials of infinite systems of sources and numerical of Programs in semi-conductor engineering.Bell Sys Tech J,1955,34:105 ~ 128
[1]S. Honda, S. Ohmoto, R. Imada,et al., J. Magn. Magn. Mater. 1993,126:419.
[2]R. Nakatani, K. Hoshino, et al., J. Magn. Magn.Mater. 1997,166:261.
[3]J. Ben Youssef, K. Bouziane, H. Le Gall, M. El Harfaoui, O. Koshkina,J.M. Desvignes, A. Fert, J. Magn. Magn. Mater. 1997,165:288.
[4]A.M. Shukh, D.H. Shin, H. Hoffman, J. Appl. Lett. 1994,76:6507.
[5]K. Bouziane, Ph.D. Thesis, vol. VI, University of Paris, France,1996, unpublished.
[6]M. El Harfaoui, H. Le Gall, J. Ben Youssef, S. Pogossian, A. Thiaville,P. Gogol, A. Qachaou, J.M. Desvignes, J. Magn. Magn. Mater. 1999,198–199:107.
[7]K.Bouziane,A.D.Al Rawas, et al. J. Alloys Compd. 2006,41:442-47
[8]H.Holloway,D.J.Kubinski. J.Appl. Phys,1998,83:2705-2713
[9]C. Christides,S. Stavroyiannis, N. Boukos, A. Travlos, and D. Niarchos. J.Appl. Phys,1998,83:3724-.3730.
[10]Senthilnathan Mohanana, Andreas Grob, Ulrich Herr. J. Appl. Lett. 2006,99: 08T102.
[11]别青山,游彪,鹿牧等,Journal of Nanjing University.Vol.33, No.4.Oct.,1997
[12]杨立,南京大学研究生论文
[13]H.-C. Lee,T.-K. Kim, Heebok Lee, J. Magn. Magn. Mater. 2000,215–216 :522- 525.
[14]M. Marszaek, J. Jaworski, A. Michalik, J. Prokop, Z. Stachura, V.Voznyi,O.Bo K lling, B. Sulkio-Cle, J. Magn. Magn. Mater. 2001,226–230:1735-1737.
[15]Marta Marsza?ek, Aleksander Polit,Valeryi Tokman,Yevhen Zabila,IvanProts- enko,Surf. Sci. 2007,601: 4454-4458.
[16]沈鸿烈,南京航空航天大学学报. 2005,37:541-546
[17]钱政,传感器技术学报. 2003,4: 516-520
[18]王海,传感器技术. 1999,18:47-51
[19]B.Skubic,E.Holmstrom etal. Phys Rev Lett, 2006, 96:057205
[20]S.S.P.Parkin,R.Bhadra,and K.P.Roche. Phys Rev Lett,1991,66:2152-2155.
[21]Erik Holmstrom,Anders Berqman et al. Phys Rev B, 2004,70: 064408.
[22]B.Hjorvarsson,J.A.Dura,P.Isberg et al. Phys Rev Lett,1997,79:901-904.
[23]Leszek Malkinski,Jian-Qing Wang et al. Thin Solid Film,2000,375:59-63.
[24]P.Bruno,C.Chappert. Phys Rev Lett,1991,67:1602-1605.
[25] P.Bruno. Phys Rev B, 1995,52:411-439.
[26] Jun-Zhong Wang, Phys Rev B,1999,59:6383-6389.
[27]A. Bollero, L. D. Buda-Prejbeanu,V. Baltz,J. Sort,B. Rodmacq,and B. Dieny, Phys Rev B,2006,73:144407-1,1444407-6.
[28]S.N.Okuno,K.Inomata. Phys Rev Lett,1993,70:1711-1714.
[29]Tamio Oguchi.Materials Science and Engineering, 1995,B31:111-116.
[30]H.Holloway,D.J.Kubinski. J Appl Phys,1998,83:2705-2713.
[2]M.N.Baibisch et al.Phys.Rev. Lett.61(1988) 2472.G.B.inasch et al. ,Phys. Rev. B 39 (1989)4828.
[3]S. A. Wolf, D. D. Awschalom, R. A. Buhrman et al . A Spin-Based Electronics Vision for the Future.[J]. Science,2001,294:1488-1495.
[4]A. Barthelemy et al.Magnetoresistance and spin electronics.[J].J Magn Magn Mater,2002,242-245:68-76.
[5]J.N.Chapman,J.Rose et al.Magnetization processes in Co/Cu multilayers with low magnetoresistive hysteresis.[J]. J Appl Phys,1999, 86: 1611-1620.
[6]B.Skubic,E.Holmstrometal.Competing Exchange Interactions in Mangnetic Multilayers.[J]. Phys Rev Lett, 2006, 96:057205 .
[7]S.S.P.Parkin,R.Bhadra,and K.P.Roche.Oscillatory Magnetic Exchange Coupling through Thin Copper Layers.[J]. Phys Rev Lett,1991,66:2152-2155.
[8]K.Bouziane,A.D.Al Rawas et al.Buffer effect on GMR in thin Co/Cu multilayers.[J].Journal of Alloys and Compounds, 2006,414:42-46.
[9]A.B.Pippard,《Magnetoresistance in Metals》( Cambridge University Press,Cambridge,1989)
[10]W.F.Leverton and A.J.Dekker,Phys.Rev.,80,1950:732;81,1951:156
[11]J.Babiskin,Osillatory galvanomagnetic properties of bismuth single crystals in longitudinal magnetic fields.Phys.Rev.,107,1957:981
[12] J.Simt,Physica,XV1,1951:612
[13]Mcguire T R,Potter R I.Anisotropic magnetoresistance in ferromagnetic 3d alloys.IEEE Trans Magn,1975,11:1018 ~ 1038
[14] Parkin S S P,Li Z G,Smith D J.Giant magnetoresistance in antiferromagnetic Co/Cu multilayers.Appl Phys Lett,1991,58:2710 ~ 2712
[15]Dieny B,Speriosu V S,Parkin S S Petal.Giant magnetoresistance in soft ferromagnetic multilayers.Phys Rev B,1991,43:1297 ~ 1300
[16] Miyazaki T,Yaoi T,S Ishio.J Magn Magn Mater,1991,98:7
[17]Miyazaki T,Tezuka N. J Magn Magn Mater,1995,151:403 ~ 410
[18] Sato M,Kikuchi H,Kobayashi K.J Appl Phys,1998,83:6691
[19] Xiong G. C,Li Q,Ju H L et al.Appl Phys Lett,1995,66:1427 ~ 1429
[20] Liu K,Wu X W,Ahn K H et tal. Phys Rev B,1996,54:3007
[21] P. Grdnberg,RSchreiber,Y.Pang,et al.,Phys.Rev.Lett.57(1986)2442
[22] M.N.Baibich,J. M.Broto, A. Fert et al,Phys.Rev.Lett.,61(1988)2472
[23] P. Granberg. et al. , P hy s. R ev. B54 (1996) 1199.
[24] M. L. Yan et al. , J. A pp l. P hy s. 74 (1995) 1816
[25]C. T. Yu et al. , P hy s. R ev. B52 (1995) 1123
[26] Q. Y. J in et al. , J. M ag n. M ag n. M at. 140—144 (1995) 565
[27]A.Fert,et.al.B.HeinrichandJ.A.C.Bland,Spring Verlag,Berlin Heidelberg,1994 ,Vo l.ê, P. 45
[28]S. S. P. Park.Ultrath in Magnetic Structures, 1994,Vo l.ê, P. 148
[29]蔡建旺,赵见高,詹文山,沈保根.磁电子学中的若干问题.物理学进展,1997,17:119 ~ 149
[30]M .Rdhrig,R.Sch~/fer,A.Hubert,R.Mosler,J.A.Wo1f.S.Demokritov andP.GrunbergPhys.Status Solidi A125(1 991)635;A.Fuss,S.Demokritov,P.Grunberg and W.Zinn,J .Magn.Magn.M ater.103(1992)L221.
[31]J.C.Slonczewski,J.ApL.Phys.73(1993)595
[32]M.L.Watson,W.D.Doyle and H.Fujiwara,J.Appl.73(1993)551
[33]E.veu,C.Dupas,D.Renard,J.P.Renard and J.Seider,Phys.Rev.B37 (1988)668.
[34]D.H.Mosca,A.Barthelemy,F.Petroff,A.Fert,P.A.Schroeder,W.P.Pratt,Jr.,R.Laloee and R.Cabanel,J.Magn.Magn.Mater.93 (1990)480-
[35]B.Dicny,V.S.Speriou,S.S.P.Parkin,B.A.Gurney D.R.Wilhoit and D.Mauri,Phys.Rev.B43(1991)1297.
[36]T.C.Anthony,J.A.Brug and S.Zhang,IEEE Trans.Magn.30(1994)3819.
[37]P.P.Freitas,J.L.Leal,L.V.Melo,N.J.Oliveira,L.Rodrigues and A.T.Sousa,Appl,Phys.Lett.65(1994)403.
[38]S.S.P.Parkin,Phys.Rev.Lett.71(1993)1641.
[39]T.Shinjo.andH.mamoto,J.Phys.Soc.Jpn.59(1990)3061;H.Yamamoto,T.Okuyama. H.Dohnomae and T.Shinjo,J.Magn.Magn.Mater.99(1991)243.
[40]A.Chaiken,P.Lubitz,J.J.Krebs,G.A.Prinz and M.z.Harford,Appl. Phys.Lett.59(1991)240.
[41] T.Valet,J.C.Jacquet,P.Galtier,J.M.Coutelliert L.G.Pereira,R.Morel,D.Lotties and A.Pertt,Appt.Phys.Lett.61(1992)3187.
[42] D.Miyauchi and S.Araki.Appl.Phys.Lett.63 (1993)1702.
[43] H.Sakakima and M .Satomit J App1.Phys.33 (1994)L1668.
[44]M.Jinmbt K.Komiyama and H.Matue,Jpn.J.Appl.Phys.34(1995)L112.
[45]BaibichM N , B ro to J M , Fert A ,et al.Giant magnetoresistance of (001)Fe/( 001) Cr magnetic superlattices. P hys R ev Lett, 1988; 61 (21) : 2472
[46]魏朝刚,任天令,朱钧等.固体电子学研究与进展.2003,23:376-383
[47]Osofsky M.Spin-injection. Journal of Superconductivity : Incorporating Novel Magnetism , 2000; 13 (2) :209
[48]Fiederling R,Keim M,Reuscher G,et al.Injectionand detection of a sp-inpolarized current in a light-emitting diode. Nature, 1999; 402: 787
[1]L.I.Maissel and R.Glang,Handbook of Thin Film Technology(McGraw-Hill,New York,1929)
[2]J. W. Matthews, Epitaxial Growth, Acdademic Press, New York, 1975
[3]田民波,刘德令,“薄膜科学与技术手册”,机械工业出版社,1991
[4]达道安,“真空设计手册”,国防工业出版社,1992
[5]金曾孙,“薄膜制备技术及其应用”,吉林大学出版社,1989
[6]金原粲等,“薄膜”,王力衡等译,电子工业出版社,1988
[7]小沼光晴,“等离子体及成膜基础”,张光华译,国防工业出版社,1994
[8]高技术新材料要览编辑委员会,“高技术新材料要览”,中国科学技术出版社,1993
[9]唐伟忠,“薄膜材料制备原理,技术及应用”,冶金工业出版社,1998
[10] Masahiko Naoe et al., J. Mag. Mag. Mat. 395,1994:134
[11] P. N. Argyres, Phys. Rev. 97, 1955:334
[12]Arthur Uhlir Jr.The potentials of infinite systems of sources and numerical of Programs in semi-conductor engineering.Bell Sys Tech J,1955,34:105 ~ 128
[1]S. Honda, S. Ohmoto, R. Imada,et al., J. Magn. Magn. Mater. 1993,126:419.
[2]R. Nakatani, K. Hoshino, et al., J. Magn. Magn.Mater. 1997,166:261.
[3]J. Ben Youssef, K. Bouziane, H. Le Gall, M. El Harfaoui, O. Koshkina,J.M. Desvignes, A. Fert, J. Magn. Magn. Mater. 1997,165:288.
[4]A.M. Shukh, D.H. Shin, H. Hoffman, J. Appl. Lett. 1994,76:6507.
[5]K. Bouziane, Ph.D. Thesis, vol. VI, University of Paris, France,1996, unpublished.
[6]M. El Harfaoui, H. Le Gall, J. Ben Youssef, S. Pogossian, A. Thiaville,P. Gogol, A. Qachaou, J.M. Desvignes, J. Magn. Magn. Mater. 1999,198–199:107.
[7]K.Bouziane,A.D.Al Rawas, et al. J. Alloys Compd. 2006,41:442-47
[8]H.Holloway,D.J.Kubinski. J.Appl. Phys,1998,83:2705-2713
[9]C. Christides,S. Stavroyiannis, N. Boukos, A. Travlos, and D. Niarchos. J.Appl. Phys,1998,83:3724-.3730.
[10]Senthilnathan Mohanana, Andreas Grob, Ulrich Herr. J. Appl. Lett. 2006,99: 08T102.
[11]别青山,游彪,鹿牧等,Journal of Nanjing University.Vol.33, No.4.Oct.,1997
[12]杨立,南京大学研究生论文
[13]H.-C. Lee,T.-K. Kim, Heebok Lee, J. Magn. Magn. Mater. 2000,215–216 :522- 525.
[14]M. Marszaek, J. Jaworski, A. Michalik, J. Prokop, Z. Stachura, V.Voznyi,O.Bo K lling, B. Sulkio-Cle, J. Magn. Magn. Mater. 2001,226–230:1735-1737.
[15]Marta Marsza?ek, Aleksander Polit,Valeryi Tokman,Yevhen Zabila,IvanProts- enko,Surf. Sci. 2007,601: 4454-4458.
[16]沈鸿烈,南京航空航天大学学报. 2005,37:541-546
[17]钱政,传感器技术学报. 2003,4: 516-520
[18]王海,传感器技术. 1999,18:47-51
[19]B.Skubic,E.Holmstrom etal. Phys Rev Lett, 2006, 96:057205
[20]S.S.P.Parkin,R.Bhadra,and K.P.Roche. Phys Rev Lett,1991,66:2152-2155.
[21]Erik Holmstrom,Anders Berqman et al. Phys Rev B, 2004,70: 064408.
[22]B.Hjorvarsson,J.A.Dura,P.Isberg et al. Phys Rev Lett,1997,79:901-904.
[23]Leszek Malkinski,Jian-Qing Wang et al. Thin Solid Film,2000,375:59-63.
[24]P.Bruno,C.Chappert. Phys Rev Lett,1991,67:1602-1605.
[25] P.Bruno. Phys Rev B, 1995,52:411-439.
[26] Jun-Zhong Wang, Phys Rev B,1999,59:6383-6389.
[27]A. Bollero, L. D. Buda-Prejbeanu,V. Baltz,J. Sort,B. Rodmacq,and B. Dieny, Phys Rev B,2006,73:144407-1,1444407-6.
[28]S.N.Okuno,K.Inomata. Phys Rev Lett,1993,70:1711-1714.
[29]Tamio Oguchi.Materials Science and Engineering, 1995,B31:111-116.
[30]H.Holloway,D.J.Kubinski. J Appl Phys,1998,83:2705-2713.