高速光探测器的关键技术
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摘要
随着当前用户对通信系统的速度和容量的要求快速增长,光网络需要不断地升级以满足用户对未来数据传输系统高容量的需求。通过波分复用和时分复用等技术,目前单根光纤的最大传输容量已经达到了102.3Tera-bit/s。高速光探测器能够把调制的光信号转换成高速的电信号,是通信系统接收端的关键器件。另外,光探测器在包括毫米波及太赫兹波信号产生、光混频器等的模拟光链路中也发挥了重要作用。本论文对InP基高速光探测器、相关器件及其重要应用的关键技术进行了深入研究,主要研究内容包括：
1.多模干涉耦合器
对受限制干涉和一般干涉两种结构的2x23dB耦合器的性能进行了分析对比,提出了新的比较方法,得到了一般干涉结构耦合器具有更紧凑的结构、相似的性能的结论。所制作的两种结构的2x2多模干涉耦合器在测试波长范围(1540～1560nm)内,损耗为-10～-5dB,不平衡度在1dB以内。还提出了一种新型多段式1.55μm/1.31μm多模干涉光分波器,其长度较以往理论设计的多模干涉结构的光分波器减小80%以上,具有低损耗、高消光比的特点。对1.55μmm光的消光比是22.4dB,插入损耗是-0.62dB；对1.31μm光的消光比是12dB,插入损耗是-1.46dB。
2.高速InP基光探测器
利用耦合光波导理论,提出了一种简单有效的倏逝耦合探测器波导结构的设计方法。所制作探测器的光响应度在0.5～0.7A/W,带宽在70-120GHz。在不加温度控制条件下,入射10GHz光信号,器件饱和光电流超过20mA;入射100GHz光信号,饱和光电流约16mA,微波输出功率超过OdBm。利用Atlas软件并结合不同的物理模型,对所制作探测器的暗电流进行了研究,仿真结果与实际测试结果相近,得到了探测器吸收层的掺杂浓度和厚度是影响探测器暗电流大小的重要因素的结论,还分析了在高入射光功率下,探测器出现饱和现象的物理过程。利用HFSS、ADS以及描述探测器载流子行为的漂移扩散模型,建立了描述探测器频率响应(DC-110GHz)的电路模型。所制作探测器在0V偏压下,响应度基本与加2V偏压情况下测得的响应度相等,带宽约40GHz,直流饱和光电流6mA左右。设计了一种可以提高探测器带宽-饱和电流积的串联式探测器,由于两探测器串联连接,其总电容减半,同时串联式探测器的总面积增加,因而提高了探测器的带宽-饱和电流积。
3.光探测器集成天线器件
建立描述50G～IT频率范围内探测器集成对数周期天线或“准偶极子”天线器件频率响应的电路模型。自偏置光探测器集成对数周期天线器件在200GHz附近频率上输出功率0.3μW,700GHz输出功率约8nW；光探测器集成对数周期天线器件在200GHz上输出功率3μW,700GHz上输出功率约30nW,适用于毫米波信号产生。对探测器集成“准偶极子”天线器件与WR10波导耦合封装新结构在W band内的频率响应进行了分析,证明了衬底模式的干涉是导致频率响应出现谐振谷的原因。耦合封装结构对WR10波导长度不敏感,天线器件插入WR10波导内的最佳深度约1000～1200μm。根据天线基本原理,提出了一种新型双偶极子端射天线结构,将天线辐射方向改变成水平方向,可以简化探测器集成天线器件封装的难度,同时还可以比较容易地与WR10、WR8波导耦合,提高了耦合封装器件的工作频段。
With the demand for high speed and large capacity of modern communication systems growing rapidly, the optical network will be upgraded continuously to meet the requirements of high capacity for future data transmission systems. By employing wavelength division multiplexing and time division multiplexing techniques, the maximum capacity in single fiber has reached to102.3Tera-bit/s. High speed photodiodes, which can transform the modulated optical signals into high speed electrical signals, are the key devices on the receiver side of communication systems. Besides, high speed photodiodes are also widely used in analog optics links, such as the generation of millimeter or terahertz wave signal and optical oscillators, etc. This dissertation is mainly concerned with key technologies of InP based high speed photodiodes, related devices, and their significant applications. The main results are outlined as below:
1. Multimode interference couplers
The comparison between performances of2x2restricted multimode interference (MMI) couplers and2x2general MMI couplers has been demonstrated. A novel comparison method has been proposed, drawing a conclusion that general multimode interference devices have more compact dimensions and similar performances. The fabricated2x2MMI couplers have low loss and high imbalance. Within the wavelength range(1540-1560nm), the insertion loss of the fabricated2x2MMI couplers ranges from-lOdB to-5dB, and the imbalance ranges from-1dB to1dB. A novel1.55μ m/1.31u m multi-section MMI wavelength splitter design has been presented. The MMI wavelength splitter, whose length is shorter than20%of the conventional design, has low loss and high extinction ratio. The insertion loss is22.4dB at1.55μ m, and-1.46dB at1.31um. The extinction ratio is22.4dB at1.55μm, and12dB at1.31μ m.
2. High speed InP based photodiodes
According to the coupling modes theory, A simple and effective method has been presented for evanescently coupled photodiodes design. The responsivity of fabricated photodiodes ranges from0.5A/W to0.7A/W, and bandwidth ranges from70GHz to120GHz. Without temperature control, the saturation current of photodiodes is higher than20mA at10GHz, about16mA at100GHz. The microwave output power of photodiodes is higher than OdBm at100GHz. The research on dark current of photodiodes has been successfully done by combining Atlas and various physical models. It is found that the doping concentration and thickness of the absorption layer of photodiodes are two main factors determining the dark current. The physical process of the photodiodes saturation behavior under high input optical power has also been analyzed. A novel circuit model for simulating the frequency response (DC-110GHz) of photodiodes has been developed by employing HFSS, ADS and drift-diffusion model. The simulation results agree well with measurement ones. Under zero bias voltage, the3dB bandwidth of photodiodes is about40G, the DC saturation current is about6mA, and the responsivity is similar with that under2V bias voltage. Two series connection photodiodes have been designed. Due to halved capacity induced by two photodiodes in series connection and larger total area, the saturation current-bandwidth product of the proposed photodiodes structure has been improved.
3. Antenna-integrated photodiodes chips
The circuit model for simulating the frequency response (50G-1T) of photodiodes chips integrating log period antennas or quasi dipole antennas has been developed successfully. Log period antenna-integrated self-bias photodiodes chips delivered about0.3μ W at200GHz, and about8nW at700GHz, and log period antenna-integrated photodiodes chips delivered about3μ W at200GHz, about30nW at700GHz. The fabricated devices are suitable for the generation of the millimeter wave signal. The investigation and analysis of the novel coupling packaging structure of quasi dipole antenna-integrated photodiodes chips and WR10waveguides have been performed, drawing the conclusion that the notch in the frequency response is caused by the interference of substrate modes. The coupling packaging structure is not sensitive to the length of WR10waveguide, and the optimal depth of the chips inserting the WR10waveguide is about1000-1200μm. According to the antenna theory, a novel dual dipole end fire antenna has been proposed, converting the radiation of the antenna from vertical to horizontal direction, simplifying the difficulty of packaging, improving the coupling efficiency between chips and WR10or WR8waveguide, and expanding the operating frequency range.
1.多模干涉耦合器
对受限制干涉和一般干涉两种结构的2x23dB耦合器的性能进行了分析对比,提出了新的比较方法,得到了一般干涉结构耦合器具有更紧凑的结构、相似的性能的结论。所制作的两种结构的2x2多模干涉耦合器在测试波长范围(1540～1560nm)内,损耗为-10～-5dB,不平衡度在1dB以内。还提出了一种新型多段式1.55μm/1.31μm多模干涉光分波器,其长度较以往理论设计的多模干涉结构的光分波器减小80%以上,具有低损耗、高消光比的特点。对1.55μmm光的消光比是22.4dB,插入损耗是-0.62dB；对1.31μm光的消光比是12dB,插入损耗是-1.46dB。
2.高速InP基光探测器
利用耦合光波导理论,提出了一种简单有效的倏逝耦合探测器波导结构的设计方法。所制作探测器的光响应度在0.5～0.7A/W,带宽在70-120GHz。在不加温度控制条件下,入射10GHz光信号,器件饱和光电流超过20mA;入射100GHz光信号,饱和光电流约16mA,微波输出功率超过OdBm。利用Atlas软件并结合不同的物理模型,对所制作探测器的暗电流进行了研究,仿真结果与实际测试结果相近,得到了探测器吸收层的掺杂浓度和厚度是影响探测器暗电流大小的重要因素的结论,还分析了在高入射光功率下,探测器出现饱和现象的物理过程。利用HFSS、ADS以及描述探测器载流子行为的漂移扩散模型,建立了描述探测器频率响应(DC-110GHz)的电路模型。所制作探测器在0V偏压下,响应度基本与加2V偏压情况下测得的响应度相等,带宽约40GHz,直流饱和光电流6mA左右。设计了一种可以提高探测器带宽-饱和电流积的串联式探测器,由于两探测器串联连接,其总电容减半,同时串联式探测器的总面积增加,因而提高了探测器的带宽-饱和电流积。
3.光探测器集成天线器件
建立描述50G～IT频率范围内探测器集成对数周期天线或“准偶极子”天线器件频率响应的电路模型。自偏置光探测器集成对数周期天线器件在200GHz附近频率上输出功率0.3μW,700GHz输出功率约8nW；光探测器集成对数周期天线器件在200GHz上输出功率3μW,700GHz上输出功率约30nW,适用于毫米波信号产生。对探测器集成“准偶极子”天线器件与WR10波导耦合封装新结构在W band内的频率响应进行了分析,证明了衬底模式的干涉是导致频率响应出现谐振谷的原因。耦合封装结构对WR10波导长度不敏感,天线器件插入WR10波导内的最佳深度约1000～1200μm。根据天线基本原理,提出了一种新型双偶极子端射天线结构,将天线辐射方向改变成水平方向,可以简化探测器集成天线器件封装的难度,同时还可以比较容易地与WR10、WR8波导耦合,提高了耦合封装器件的工作频段。
With the demand for high speed and large capacity of modern communication systems growing rapidly, the optical network will be upgraded continuously to meet the requirements of high capacity for future data transmission systems. By employing wavelength division multiplexing and time division multiplexing techniques, the maximum capacity in single fiber has reached to102.3Tera-bit/s. High speed photodiodes, which can transform the modulated optical signals into high speed electrical signals, are the key devices on the receiver side of communication systems. Besides, high speed photodiodes are also widely used in analog optics links, such as the generation of millimeter or terahertz wave signal and optical oscillators, etc. This dissertation is mainly concerned with key technologies of InP based high speed photodiodes, related devices, and their significant applications. The main results are outlined as below:
1. Multimode interference couplers
The comparison between performances of2x2restricted multimode interference (MMI) couplers and2x2general MMI couplers has been demonstrated. A novel comparison method has been proposed, drawing a conclusion that general multimode interference devices have more compact dimensions and similar performances. The fabricated2x2MMI couplers have low loss and high imbalance. Within the wavelength range(1540-1560nm), the insertion loss of the fabricated2x2MMI couplers ranges from-lOdB to-5dB, and the imbalance ranges from-1dB to1dB. A novel1.55μ m/1.31u m multi-section MMI wavelength splitter design has been presented. The MMI wavelength splitter, whose length is shorter than20%of the conventional design, has low loss and high extinction ratio. The insertion loss is22.4dB at1.55μ m, and-1.46dB at1.31um. The extinction ratio is22.4dB at1.55μm, and12dB at1.31μ m.
2. High speed InP based photodiodes
According to the coupling modes theory, A simple and effective method has been presented for evanescently coupled photodiodes design. The responsivity of fabricated photodiodes ranges from0.5A/W to0.7A/W, and bandwidth ranges from70GHz to120GHz. Without temperature control, the saturation current of photodiodes is higher than20mA at10GHz, about16mA at100GHz. The microwave output power of photodiodes is higher than OdBm at100GHz. The research on dark current of photodiodes has been successfully done by combining Atlas and various physical models. It is found that the doping concentration and thickness of the absorption layer of photodiodes are two main factors determining the dark current. The physical process of the photodiodes saturation behavior under high input optical power has also been analyzed. A novel circuit model for simulating the frequency response (DC-110GHz) of photodiodes has been developed by employing HFSS, ADS and drift-diffusion model. The simulation results agree well with measurement ones. Under zero bias voltage, the3dB bandwidth of photodiodes is about40G, the DC saturation current is about6mA, and the responsivity is similar with that under2V bias voltage. Two series connection photodiodes have been designed. Due to halved capacity induced by two photodiodes in series connection and larger total area, the saturation current-bandwidth product of the proposed photodiodes structure has been improved.
3. Antenna-integrated photodiodes chips
The circuit model for simulating the frequency response (50G-1T) of photodiodes chips integrating log period antennas or quasi dipole antennas has been developed successfully. Log period antenna-integrated self-bias photodiodes chips delivered about0.3μ W at200GHz, and about8nW at700GHz, and log period antenna-integrated photodiodes chips delivered about3μ W at200GHz, about30nW at700GHz. The fabricated devices are suitable for the generation of the millimeter wave signal. The investigation and analysis of the novel coupling packaging structure of quasi dipole antenna-integrated photodiodes chips and WR10waveguides have been performed, drawing the conclusion that the notch in the frequency response is caused by the interference of substrate modes. The coupling packaging structure is not sensitive to the length of WR10waveguide, and the optimal depth of the chips inserting the WR10waveguide is about1000-1200μm. According to the antenna theory, a novel dual dipole end fire antenna has been proposed, converting the radiation of the antenna from vertical to horizontal direction, simplifying the difficulty of packaging, improving the coupling efficiency between chips and WR10or WR8waveguide, and expanding the operating frequency range.
引文
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