磷化铟基集成光子器件及其关键工艺技术研究
摘要
上世纪70年代,磷化铟材料外延技术的进步使得长寿命,高可靠性的半导体有源器件走向成熟,为光通信的飞跃式发展奠定了基础。磷化铟及其四元衍生物的能带结构可以随组分变化,为各种光子器件的实现提供了极大的灵活性,因此磷化铟集成光子器件的一直是国际上研究的热点之一
本课题的研究目的就是利用磷化铟及其四元衍生物这一平台,针对密集波分复用,可调谐激光器,光纤到户等应用方向开展一系列的研究,开发出低成本、高可靠性的集成化光子器件,同时在磷化铟集成光子器件的理论和工艺制作方面进行探索,为今后发展更多功能的集成光电子器件奠定坚实的基础。
目前世界上报道的性能最为优异的密集波分复用集成光通道监测器件是加拿大Metro-Photonic公司于2004年推出的集成了波导探测器和阶梯光栅解复用器的44通道光通道监测器。该器件集成度较高,但是也存在尺寸和插损较大等缺点,针对其不足,本文提出了平板波导探测器和阶梯光栅解复用器的集成方案,该方案克服了基于传统波导探测器器件的缺点,可以获得大带宽的平坦通带而不引起额外损耗,并有利于器件小型化,降低成本。数值模拟证明了该方案的可行性。
本文的一个研究重点是集成化可调谐激光器,提出了一种基于传统双耦合器环形腔耦合激光器结构实现单电极无跳模激光器的设想,并针对传统环形腔耦合激光器的不足,结合V型耦合腔激光器的原理,提出了半波单耦合器环形腔耦合激光器。对上述两类单环耦合激光器的特点进行了比较,相比于传统的双耦合器环形腔耦合激光器,半波单耦合器环形腔耦合激光器的最大优点是可以利用环与激光腔的游标效应进行模式选择,这样可以大大放宽对环形腔半径的限制,从而使单环耦合的可调谐激光器成为可能。
此外,针对光纤到户的应用,本文提出了一种利用新颖的利用环形激光器腔内耦合实现上下行信号解复用的单纤双向/三向收发器,设计并仿真了该方案的关键器件-2X2凹形耦合器,设计获得的耦合器结构紧凑,并且无需使用高精度光刻技术即可制作,为了将双向收发器扩展到三向收发器,本文也提出了利用阶梯光栅作为下行光解复用器的方案。
最后,本文以V型腔激光器制作工艺为出发点,系统的研究了光子集成器件的各项工艺,包括光刻,刻蚀,平坦化,金属溅射,剥离,机械化学抛光等,成功地获得了垂直度高、侧壁光滑的刻蚀工艺配方,并提出了利用薄胶平坦化的工艺,大大增强了平坦化过程的鲁棒性,并利用这些工艺制作出了V型耦合腔激光器样片。
Since 1970s, the progress of epitaxial technology for Indium Phosphide (InP) based material system has enabled the long-life, high reliability semiconductor active devices to mature, which has laid the foundation for a leap-forward development of optical communication. The energy band structure of indium phosphide and its quaternary compounds can be tailored by varying its composition, which provides a great deal of flexibility for the realization of a variety of photonic devices. Hence, InP based integrated photonic devices has been investigated very widely.
The subject of this thesis is to use InP and its quaternary compounds to fabricate low-cost, high reliability integrated photonic devices for dense wavelength division multiplexing (DWDM), tunable lasers and fiber-to-the-home (FTTH) applications. The theory and fabrication processes of InP based integrated photonics devices are developed in order to lay a foundation for the future development of other related photonic devices.
With the growing demand of the optical network bandwidth, DWDM systems have been deployed very widely. DWDM can simultaneously multiplex and demultiplexe dozens of wavelengths, hence, the planar waveguide demultiplexer has been widely used in DWDM systems. While arrayed waveguide grating is preferable for silica based devices, echelle grating demultiplexer is more suitable for InP based devices, because of its small size and better scalability to higher-channel count. The state-of-art InP based demultiplexing device reported in the literature is a 44-channel optical channel monitor based on the integration of an echelle grating demultiplexer and a waveguide detector array. While the device achieves a high degree of integration, it has drawbacks, particularly the large insertion loss due to the passband-flatening method it uses. This thesis presents a novel passband-flattened Optical Channel Monitor (OCM) device based on integration of an echelle grating demultiplexer and slab waveguide detectors. It provides a wide channel passband without suffering from any loss penalty, and the device is more compact compared to the channel waveguide based detector approach. Numerical simulation demonstrated the high-performance of the proposed device.
Another type of photonic integrated devices that the thesis focuses on is the design and development of novel monolithicly integrated tunable lasers. The thesis presents a single-electrode tuned mode-hop-free laser based on ring coupled laser structure. We also proposed a novel ring coupled laser which use a half-wave coupler. Compared to dual-coupler ring coupled lasers, the merit of single-coupler ring coupled lasers is free spectrum range of the device can be enlarged due to the incorporation of a strong Vernier effect in this structute, which could greatly relax the restrictions on the ring radius. We believe the proposed laser will take the single ring filted tunable lasers into practice.
The thesis also proposed a novel monolithic di/triplexer design. The diplexer uses a ring cavity laser as the upstream transmitter and a 2x2 coupler of the ring also serves as a demultiplexer for up and down stream signals, simultanously. A bi-level etched structure is employed here as the coupler. The merit of the bi-level coupler is its compact footprint and low requirement for photolithography resolution. Moreover, the thesis also introduces an echelle grating to demulplex the two down stream signals so that the proposed diplexer can be extended to a triplexer.
Finally, we systematiclly investigated the fabrication processes for photonic integrated devices, including lithography, dry and wet etching, planarization, metal sputtering, lift-off, chemical mechanical polishing and so on. A robust dry etching recipe which can achieve a vertical and smooth etched facet is obtained. Besides, the thesis also presents a method to planarize the ridge waveguide of lasers. It uses a thin spin-on polymer film to obtain the planarization which is robust to the non-uniformity of the film thickness and the speed of etch back. With the developed processes, we succesfully fabricated and experimentally demonstrated V-coupled cavity lasers.
本课题的研究目的就是利用磷化铟及其四元衍生物这一平台,针对密集波分复用,可调谐激光器,光纤到户等应用方向开展一系列的研究,开发出低成本、高可靠性的集成化光子器件,同时在磷化铟集成光子器件的理论和工艺制作方面进行探索,为今后发展更多功能的集成光电子器件奠定坚实的基础。
目前世界上报道的性能最为优异的密集波分复用集成光通道监测器件是加拿大Metro-Photonic公司于2004年推出的集成了波导探测器和阶梯光栅解复用器的44通道光通道监测器。该器件集成度较高,但是也存在尺寸和插损较大等缺点,针对其不足,本文提出了平板波导探测器和阶梯光栅解复用器的集成方案,该方案克服了基于传统波导探测器器件的缺点,可以获得大带宽的平坦通带而不引起额外损耗,并有利于器件小型化,降低成本。数值模拟证明了该方案的可行性。
本文的一个研究重点是集成化可调谐激光器,提出了一种基于传统双耦合器环形腔耦合激光器结构实现单电极无跳模激光器的设想,并针对传统环形腔耦合激光器的不足,结合V型耦合腔激光器的原理,提出了半波单耦合器环形腔耦合激光器。对上述两类单环耦合激光器的特点进行了比较,相比于传统的双耦合器环形腔耦合激光器,半波单耦合器环形腔耦合激光器的最大优点是可以利用环与激光腔的游标效应进行模式选择,这样可以大大放宽对环形腔半径的限制,从而使单环耦合的可调谐激光器成为可能。
此外,针对光纤到户的应用,本文提出了一种利用新颖的利用环形激光器腔内耦合实现上下行信号解复用的单纤双向/三向收发器,设计并仿真了该方案的关键器件-2X2凹形耦合器,设计获得的耦合器结构紧凑,并且无需使用高精度光刻技术即可制作,为了将双向收发器扩展到三向收发器,本文也提出了利用阶梯光栅作为下行光解复用器的方案。
最后,本文以V型腔激光器制作工艺为出发点,系统的研究了光子集成器件的各项工艺,包括光刻,刻蚀,平坦化,金属溅射,剥离,机械化学抛光等,成功地获得了垂直度高、侧壁光滑的刻蚀工艺配方,并提出了利用薄胶平坦化的工艺,大大增强了平坦化过程的鲁棒性,并利用这些工艺制作出了V型耦合腔激光器样片。
Since 1970s, the progress of epitaxial technology for Indium Phosphide (InP) based material system has enabled the long-life, high reliability semiconductor active devices to mature, which has laid the foundation for a leap-forward development of optical communication. The energy band structure of indium phosphide and its quaternary compounds can be tailored by varying its composition, which provides a great deal of flexibility for the realization of a variety of photonic devices. Hence, InP based integrated photonic devices has been investigated very widely.
The subject of this thesis is to use InP and its quaternary compounds to fabricate low-cost, high reliability integrated photonic devices for dense wavelength division multiplexing (DWDM), tunable lasers and fiber-to-the-home (FTTH) applications. The theory and fabrication processes of InP based integrated photonics devices are developed in order to lay a foundation for the future development of other related photonic devices.
With the growing demand of the optical network bandwidth, DWDM systems have been deployed very widely. DWDM can simultaneously multiplex and demultiplexe dozens of wavelengths, hence, the planar waveguide demultiplexer has been widely used in DWDM systems. While arrayed waveguide grating is preferable for silica based devices, echelle grating demultiplexer is more suitable for InP based devices, because of its small size and better scalability to higher-channel count. The state-of-art InP based demultiplexing device reported in the literature is a 44-channel optical channel monitor based on the integration of an echelle grating demultiplexer and a waveguide detector array. While the device achieves a high degree of integration, it has drawbacks, particularly the large insertion loss due to the passband-flatening method it uses. This thesis presents a novel passband-flattened Optical Channel Monitor (OCM) device based on integration of an echelle grating demultiplexer and slab waveguide detectors. It provides a wide channel passband without suffering from any loss penalty, and the device is more compact compared to the channel waveguide based detector approach. Numerical simulation demonstrated the high-performance of the proposed device.
Another type of photonic integrated devices that the thesis focuses on is the design and development of novel monolithicly integrated tunable lasers. The thesis presents a single-electrode tuned mode-hop-free laser based on ring coupled laser structure. We also proposed a novel ring coupled laser which use a half-wave coupler. Compared to dual-coupler ring coupled lasers, the merit of single-coupler ring coupled lasers is free spectrum range of the device can be enlarged due to the incorporation of a strong Vernier effect in this structute, which could greatly relax the restrictions on the ring radius. We believe the proposed laser will take the single ring filted tunable lasers into practice.
The thesis also proposed a novel monolithic di/triplexer design. The diplexer uses a ring cavity laser as the upstream transmitter and a 2x2 coupler of the ring also serves as a demultiplexer for up and down stream signals, simultanously. A bi-level etched structure is employed here as the coupler. The merit of the bi-level coupler is its compact footprint and low requirement for photolithography resolution. Moreover, the thesis also introduces an echelle grating to demulplex the two down stream signals so that the proposed diplexer can be extended to a triplexer.
Finally, we systematiclly investigated the fabrication processes for photonic integrated devices, including lithography, dry and wet etching, planarization, metal sputtering, lift-off, chemical mechanical polishing and so on. A robust dry etching recipe which can achieve a vertical and smooth etched facet is obtained. Besides, the thesis also presents a method to planarize the ridge waveguide of lasers. It uses a thin spin-on polymer film to obtain the planarization which is robust to the non-uniformity of the film thickness and the speed of etch back. With the developed processes, we succesfully fabricated and experimentally demonstrated V-coupled cavity lasers.
引文
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