InGaN/GaN发光二极管的数学物理模型和特性及最优驱动电流研究
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摘要
铟镓氮/氮化镓（InGaN/GaN）发光二极管（Light-emitting diode：LED）照明节能技术是世界各国缓解能源危机的一个重要途径。InGaN/GaN LED电光热特性研究对LED固态照明的可行性、可靠性和经济性起着重要作用，对LED上中下游产业链的发展有重要意义。
InGaN/GaN LED是一种电能转换为光能的半导体光电子器件，表现出复杂的电、光、热特性。针对典型的InGaN/GaN LED照明系统，借助试验研究和建模分析等手段，开展在脉宽调制（PWM）驱动电流下，电热等物理量对InGaN/GaN LED特性影响的研究，深化对LED特性及其微观机理的认识，并为多芯LED封装及其电流驱动的优化设计提供重要的理论和试验指导，主要工作包括以下几个方面。
在一般商用LED测试系统的基础上，完善了InGaN/GaN LED电光热特性的研究测试平台：研制了满足电光热耦合特性研究的数控电源、温度测控装置，以及满足老化试验要求的PWM电流驱动单元等；采用虚拟仪器软件开发了测试软件系统，对商用LED综合测试平台进行了优化；讨论了特性试验研究的基本原理和方法；为InGaN/GaN LED特性的试验研究提供了必要的硬件支持及方法指导。
利用搭建的测试平台开展了大量的InGaN/GaN LED试验研究，深入考察InGaN/GaN LED应用中存在的各种电光热耦合效应，并对LED特性进行了数学物理建模分析：重点研究了数学物理模型参数的提取算法，考察了算法的精度、速度、收敛性和鲁棒性，提出了满足建模需求的改进算法；在数学物理模型的基础上获得了特征量的基本特性，为InGaN/GaN LED特性的微观机理解释提供了更为准确、可靠的参考依据。
针对单芯InGaN/GaN LED进行了大量老化试验研究，从InGaN/GaN LED材料属性、封装结构、载流子输运等角度，展开特性的微观机理研究，获得其特征量的演变规律，并进行了寿命预测研究，对InGaN/GaN LED的光衰现象提出了更合理的微观机理解释，为InGaN/GaN LED上游芯片生产企业的产品最优设计提供了参考。
在单芯InGaN/GaN LED电光热特性的基础上，针对大功率照明的应用需求，研究多芯InGaN/GaN LED特性：对多芯InGaN/GaN LED电光热特性进行数学物理建模，并分析了多芯InGaN/GaN LED模型的参数优化及其过程；在此基础上，提出了一种新的多芯直嵌式封装技术，并给出了9芯InGaN/GaN LED模块（9芯片模块：9个单芯片LED组合使用的模块）的试验原型及其电光热性能，为大功率InGaN/GaN LED照明的光源设计和研制提供理论和实践指导。
针对InGaN/GaN LED电流驱动的参数设置问题，根据单芯InGaN/GaN LED电光热特性的试验研究和建模分析结果，推导出了电光热耦合作用下单芯InGaN/GaN LED电流—光通量的近似简化模型，获得了定量光通量输出和最大光通量输出时的驱动电流方程；结合寿命预测的约束，提出驱动电流的最优化控制原理，为InGaN/GaN LED驱动设计提供了重要的理论指导。
根据多芯InGaN/GaN LED电热特性的试验研究和建模分析结果，推导出了叠加热阻等效电路网络的电流—结温近似模型，提出了温度传感器的结温估计方法，降低多芯InGaN/GaN LED最优化驱动中结温测量的复杂性；给出了结温最小化的功率重分配电流控制策略，为多芯InGaN/GaN LED最优化驱动的低成本化提供了重要的实施途径。
最后，利用9芯片模块和最优化驱动原理，结合大功率InGaN/GaN LED路灯应用实例，讨论了多芯InGaN/GaN LED的自适应最优电流驱动原理和方法，给出了基于9芯片模块的自适应电流驱动实例，实现了无温度传感器的InGaN/GaNLED自适应电流驱动控制，为InGaN/GaN LED路灯照明的进一步节能应用有着重要意义，同时为大功率LED路灯照明系统的研制提供了范例。
Indium gallium nitride (InGaN) and gallium nitride (GaN) based white lightemitting diode (LED) luminaire system presents a pathway to alleviate the energy crisisfacing the whole world. Research and exploration of the electrical, optical and thermalcharacteristics of the LED play a critical role to enhance feasibility, reliability andefficacy for LED lighting, therefore it is significant to the development of the solid statelighting industry.
InGaN/GaN LED is an optoelectronic device converting the electrical energy tolight and exhibits complex characteristics. After analyzing the typical LED lightingsystem, the characteristics are extraordinarily complicated, especially by pulse-widthmodulation (PWM) waveform to drive the LED. With the experimental study andmodeling analysis, an understanding of LED characteristics and its mechanism can beenhanced, which provides an important experimental and theoretical guidance to theoptimal design of LED package and its current drive.
To solve the weakness of commercial LED test system in measuring the electro-optical and thermal coupling characteristics, the key units including the digital currentsource, temperature controller, and PWM current-driver are developed, and they havebeen integrated into the commercial system by virtual instrument software to improvethe performances of the test platform. Moreover, the basic principles and methods ofexperiments are discussed. All these efforts provide the hardware support and methodguidance for the experimental study of the characteristics of InGaN/GaN LED.
For an in-depth study of the electro-opto-thermal coupling effect in InGaN/GaNLED applications, numerous experimental, modeling and analysis studies of InGaN/GaN LEDs have been carried out according to the built platform, and the parameterextraction algorithms for the mathematical physics model and their accuracy have beenaddressed, furthermore, the improved algorithms are reported. Additionally, thecharacteristics and laws of the quantities for the InGaN/GaN LED are obtained, whichprovides a reference to understand microscopic mechanism and optimize the design.
In order to obtain the microscopic understandings on the InGaN/GaN LEDcharacteristics, the collected data and their features of the single-chip LED have beeninvestigated according to the LED material properties, the package structures and thecarrier transports. The results can benefit the microscopic interpretations on InGaN/GaN LED light output decay and improvements of InGaN/GaN LED studies in the wholefabrication chain.
For meeting the demand for multi-chips InGaN/GaN LED characteristics inhigh-power lighting applications, the mathematical and physical modeling on electro-opto-thermal characteristics of multi-chips LEDs has been conducted based on that ofthe single-chip LED, and the model parameters optimization process is given.Furthermore, a novel multi-chips on board (COB) package method is proposed, and an9-chips module prototype and its characteristics are demonstrated, which provides thetheoretical and practical guidance for the design and development of high powerInGaN/GaN LED.
Focusing on parameters of drive current on InGaN/GaN LED, a simplifiedcurrent-light output model involving the electro-opto-thermal coupling characteristics ofsingle-chip LED has been derived from the experimental study and modeling of thecharacteristics. Furthermore, the drive currents at a quantitative and the maximum lightoutput have been obtained from the model, additionally; an optimization controlprinciple of the driving current is suggested combining the constraint of the estimatedlifetime. The results provide an important theoretical guidance for the InGaN/GaN LEDdriver design.
To reduce junction temperature measurement complexity in the optimum currentdrive for multi-chips InGaN/GaN LEDs, the the superimposed thermal resistanceequivalent circuit network is derived from the characteristics of multi-chips InGaN/GaN LEDs, and a sensorless method to estimate the junction temperature is suggested,moreover, a current redistribution control strategy with the minimal junctiontemperature is given. The advantage casts a light on low-cost realization of the optimaldrive for multi-chips InGaN/GaN LEDs.
Finally, based on the suggested9-chips module and optimal driving principle, ahigh-power street lighting lamp is illustrated to realize the adaptive current drive formulti-chips InGaN/GaN LEDs, in which the temperature sensor is not required, andmeanwhile, the further energy saving can be reached.
InGaN/GaN LED是一种电能转换为光能的半导体光电子器件，表现出复杂的电、光、热特性。针对典型的InGaN/GaN LED照明系统，借助试验研究和建模分析等手段，开展在脉宽调制（PWM）驱动电流下，电热等物理量对InGaN/GaN LED特性影响的研究，深化对LED特性及其微观机理的认识，并为多芯LED封装及其电流驱动的优化设计提供重要的理论和试验指导，主要工作包括以下几个方面。
在一般商用LED测试系统的基础上，完善了InGaN/GaN LED电光热特性的研究测试平台：研制了满足电光热耦合特性研究的数控电源、温度测控装置，以及满足老化试验要求的PWM电流驱动单元等；采用虚拟仪器软件开发了测试软件系统，对商用LED综合测试平台进行了优化；讨论了特性试验研究的基本原理和方法；为InGaN/GaN LED特性的试验研究提供了必要的硬件支持及方法指导。
利用搭建的测试平台开展了大量的InGaN/GaN LED试验研究，深入考察InGaN/GaN LED应用中存在的各种电光热耦合效应，并对LED特性进行了数学物理建模分析：重点研究了数学物理模型参数的提取算法，考察了算法的精度、速度、收敛性和鲁棒性，提出了满足建模需求的改进算法；在数学物理模型的基础上获得了特征量的基本特性，为InGaN/GaN LED特性的微观机理解释提供了更为准确、可靠的参考依据。
针对单芯InGaN/GaN LED进行了大量老化试验研究，从InGaN/GaN LED材料属性、封装结构、载流子输运等角度，展开特性的微观机理研究，获得其特征量的演变规律，并进行了寿命预测研究，对InGaN/GaN LED的光衰现象提出了更合理的微观机理解释，为InGaN/GaN LED上游芯片生产企业的产品最优设计提供了参考。
在单芯InGaN/GaN LED电光热特性的基础上，针对大功率照明的应用需求，研究多芯InGaN/GaN LED特性：对多芯InGaN/GaN LED电光热特性进行数学物理建模，并分析了多芯InGaN/GaN LED模型的参数优化及其过程；在此基础上，提出了一种新的多芯直嵌式封装技术，并给出了9芯InGaN/GaN LED模块（9芯片模块：9个单芯片LED组合使用的模块）的试验原型及其电光热性能，为大功率InGaN/GaN LED照明的光源设计和研制提供理论和实践指导。
针对InGaN/GaN LED电流驱动的参数设置问题，根据单芯InGaN/GaN LED电光热特性的试验研究和建模分析结果，推导出了电光热耦合作用下单芯InGaN/GaN LED电流—光通量的近似简化模型，获得了定量光通量输出和最大光通量输出时的驱动电流方程；结合寿命预测的约束，提出驱动电流的最优化控制原理，为InGaN/GaN LED驱动设计提供了重要的理论指导。
根据多芯InGaN/GaN LED电热特性的试验研究和建模分析结果，推导出了叠加热阻等效电路网络的电流—结温近似模型，提出了温度传感器的结温估计方法，降低多芯InGaN/GaN LED最优化驱动中结温测量的复杂性；给出了结温最小化的功率重分配电流控制策略，为多芯InGaN/GaN LED最优化驱动的低成本化提供了重要的实施途径。
最后，利用9芯片模块和最优化驱动原理，结合大功率InGaN/GaN LED路灯应用实例，讨论了多芯InGaN/GaN LED的自适应最优电流驱动原理和方法，给出了基于9芯片模块的自适应电流驱动实例，实现了无温度传感器的InGaN/GaNLED自适应电流驱动控制，为InGaN/GaN LED路灯照明的进一步节能应用有着重要意义，同时为大功率LED路灯照明系统的研制提供了范例。
Indium gallium nitride (InGaN) and gallium nitride (GaN) based white lightemitting diode (LED) luminaire system presents a pathway to alleviate the energy crisisfacing the whole world. Research and exploration of the electrical, optical and thermalcharacteristics of the LED play a critical role to enhance feasibility, reliability andefficacy for LED lighting, therefore it is significant to the development of the solid statelighting industry.
InGaN/GaN LED is an optoelectronic device converting the electrical energy tolight and exhibits complex characteristics. After analyzing the typical LED lightingsystem, the characteristics are extraordinarily complicated, especially by pulse-widthmodulation (PWM) waveform to drive the LED. With the experimental study andmodeling analysis, an understanding of LED characteristics and its mechanism can beenhanced, which provides an important experimental and theoretical guidance to theoptimal design of LED package and its current drive.
To solve the weakness of commercial LED test system in measuring the electro-optical and thermal coupling characteristics, the key units including the digital currentsource, temperature controller, and PWM current-driver are developed, and they havebeen integrated into the commercial system by virtual instrument software to improvethe performances of the test platform. Moreover, the basic principles and methods ofexperiments are discussed. All these efforts provide the hardware support and methodguidance for the experimental study of the characteristics of InGaN/GaN LED.
For an in-depth study of the electro-opto-thermal coupling effect in InGaN/GaNLED applications, numerous experimental, modeling and analysis studies of InGaN/GaN LEDs have been carried out according to the built platform, and the parameterextraction algorithms for the mathematical physics model and their accuracy have beenaddressed, furthermore, the improved algorithms are reported. Additionally, thecharacteristics and laws of the quantities for the InGaN/GaN LED are obtained, whichprovides a reference to understand microscopic mechanism and optimize the design.
In order to obtain the microscopic understandings on the InGaN/GaN LEDcharacteristics, the collected data and their features of the single-chip LED have beeninvestigated according to the LED material properties, the package structures and thecarrier transports. The results can benefit the microscopic interpretations on InGaN/GaN LED light output decay and improvements of InGaN/GaN LED studies in the wholefabrication chain.
For meeting the demand for multi-chips InGaN/GaN LED characteristics inhigh-power lighting applications, the mathematical and physical modeling on electro-opto-thermal characteristics of multi-chips LEDs has been conducted based on that ofthe single-chip LED, and the model parameters optimization process is given.Furthermore, a novel multi-chips on board (COB) package method is proposed, and an9-chips module prototype and its characteristics are demonstrated, which provides thetheoretical and practical guidance for the design and development of high powerInGaN/GaN LED.
Focusing on parameters of drive current on InGaN/GaN LED, a simplifiedcurrent-light output model involving the electro-opto-thermal coupling characteristics ofsingle-chip LED has been derived from the experimental study and modeling of thecharacteristics. Furthermore, the drive currents at a quantitative and the maximum lightoutput have been obtained from the model, additionally; an optimization controlprinciple of the driving current is suggested combining the constraint of the estimatedlifetime. The results provide an important theoretical guidance for the InGaN/GaN LEDdriver design.
To reduce junction temperature measurement complexity in the optimum currentdrive for multi-chips InGaN/GaN LEDs, the the superimposed thermal resistanceequivalent circuit network is derived from the characteristics of multi-chips InGaN/GaN LEDs, and a sensorless method to estimate the junction temperature is suggested,moreover, a current redistribution control strategy with the minimal junctiontemperature is given. The advantage casts a light on low-cost realization of the optimaldrive for multi-chips InGaN/GaN LEDs.
Finally, based on the suggested9-chips module and optimal driving principle, ahigh-power street lighting lamp is illustrated to realize the adaptive current drive formulti-chips InGaN/GaN LEDs, in which the temperature sensor is not required, andmeanwhile, the further energy saving can be reached.
引文
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