SiC薄膜及其缓冲层的制备与性能研究
摘要
SiC材料具有良好的电学特性和力学特性,是一种非常理想的可适应诸多恶劣环境的半导体材料。它禁带宽度较大,有热传导率高、耐高温、抗腐蚀、化学稳定性高等特点,用于作为半导体器件和结构材料的表面涂层,具有广阔的市场和应用前景。
本文采用射频磁控溅射法,在单晶硅Si(100)和不锈钢衬底上在室温下制备了非晶态SiC薄膜,然后经退火处理得到晶态SiC薄膜。为了提高SiC薄膜的膜基结合力,用磁控溅射法制备了TiN、Al2O3和A1N薄膜缓冲层。分析了衬底、工作气压、气体流量、溅射功率和退火温度对薄膜结构的影响。重点研究和讨论了不锈钢以及单晶硅衬底上生长SiC薄膜的工艺及其对薄膜生长和性能的影响。通过XRD, AFM, PL谱,硬度测试等分析手段,对薄膜结构、形貌及光学性质和力学性能进行了表征。主要内容如下：
第一章简述了SiC晶体结构、特性、制备方法以及常见SiC材料的研究现状和应用前景。通过对SiC的晶体结构、特性和制备工艺的分析,达到对SiC材料的进一步了解。
第二章介绍了磁控溅射制备薄膜材料的原理,叙述了薄膜的沉积过程,并综述了薄膜的表征技术。
第三章研究了在不同衬底上磁控溅射制备薄膜的工艺参数,如溅射气压、Ar流量、溅射偏压和退火温度对射频磁控溅射法沉积的SiC薄膜的影响；利用XRD、AFM和硬度测试表征了沉积SiC薄膜的结构、形貌和性能。
第四章探讨了磁控溅射制备TiN、Al2O3和AlN薄膜缓冲层的工艺,分析了衬底、工作气压、气体流量、溅射功率和退火温度对缓冲层生长的影响。
第五章对比了SiC单层膜与引入TiN、Al2O3和AlN缓冲层的SiC双层膜的性能,分析了退火对Si(100)衬底上薄膜的光学性能的影响和退火对不锈钢衬底上SiC薄膜硬度的影响。
第六章得出结论与展望。
SiC is an ideal semiconductor material due to its excellent electrical characteristics and mechanical properties, and it can be used for the harsh environment. SiC has a larger band gap, high thermal conductivity, high temperature corrosion resistance and chemical stability. It has a broad market and bright future when SiC material is used for the surface coating of semiconductor devices and structural materials.
In this paper, amorphous SiC films were prepared on the Si(100) and stainless steel substrates at room temperature by RF magnetron sputtering, then were changed into crystalline SiC films with annealing process. In order to obtain the high quality SiC films, TiN, Al2O3 and AlN buffer layers were prepared on the substrates respectively. The effects of gas pressure, gas flow, sputtering power and annealing temperature on the film structures were given. We researched the technology of SiC thin films grown on the stainless steel and silicon substrates, and discussed the effects of process parameters on SiC thin films growth and performance. By XRD, AFM, PL, hardness testing and other means, the structure, morphology, optical properties and mechanical properties of the films were characterized. The main contents are as follows:
The first chapter outlines the SiC crystal structure, properties, preparation methods, research situation and application prospects. Through the analysis of SiC crystal structure, properties and preparing processes, we can understand the SiC material deeply.
The second chapter introduces the development and the principle of magnetron sputtering, and describes the deposited processes of films and gives a summary about how to inspect the thin films.
Chapter three researches the effects of sputtering parameters on SiC thin films grown on different substrates, such as sputtering pressure, Ar flow, bias and annealing temperature. The XRD, AFM and hardness testing are used to characterize the structure, morphology and performances of the SiC films.
The fourth chapter mainly discusses the TiN, Al2O3 and AlN buffer layers, and analyses the effects of substrates, gas pressure, gas flow, sputtering power and annealing temperature on the structure of these films.
Chapter five mainly discusses the different performances about single layer SiC film and bilayer SiC film on TiN, Al2O3 and AlN buffer layers then analyses the impacts of annealing on optical properties of SiC thin films on Si(100) substrates, finally researches
the effects of annealing on hardness of SiC films grown on stainless steel substrates. Chapter six gets conclusions and outlooks future.
本文采用射频磁控溅射法,在单晶硅Si(100)和不锈钢衬底上在室温下制备了非晶态SiC薄膜,然后经退火处理得到晶态SiC薄膜。为了提高SiC薄膜的膜基结合力,用磁控溅射法制备了TiN、Al2O3和A1N薄膜缓冲层。分析了衬底、工作气压、气体流量、溅射功率和退火温度对薄膜结构的影响。重点研究和讨论了不锈钢以及单晶硅衬底上生长SiC薄膜的工艺及其对薄膜生长和性能的影响。通过XRD, AFM, PL谱,硬度测试等分析手段,对薄膜结构、形貌及光学性质和力学性能进行了表征。主要内容如下：
第一章简述了SiC晶体结构、特性、制备方法以及常见SiC材料的研究现状和应用前景。通过对SiC的晶体结构、特性和制备工艺的分析,达到对SiC材料的进一步了解。
第二章介绍了磁控溅射制备薄膜材料的原理,叙述了薄膜的沉积过程,并综述了薄膜的表征技术。
第三章研究了在不同衬底上磁控溅射制备薄膜的工艺参数,如溅射气压、Ar流量、溅射偏压和退火温度对射频磁控溅射法沉积的SiC薄膜的影响；利用XRD、AFM和硬度测试表征了沉积SiC薄膜的结构、形貌和性能。
第四章探讨了磁控溅射制备TiN、Al2O3和AlN薄膜缓冲层的工艺,分析了衬底、工作气压、气体流量、溅射功率和退火温度对缓冲层生长的影响。
第五章对比了SiC单层膜与引入TiN、Al2O3和AlN缓冲层的SiC双层膜的性能,分析了退火对Si(100)衬底上薄膜的光学性能的影响和退火对不锈钢衬底上SiC薄膜硬度的影响。
第六章得出结论与展望。
SiC is an ideal semiconductor material due to its excellent electrical characteristics and mechanical properties, and it can be used for the harsh environment. SiC has a larger band gap, high thermal conductivity, high temperature corrosion resistance and chemical stability. It has a broad market and bright future when SiC material is used for the surface coating of semiconductor devices and structural materials.
In this paper, amorphous SiC films were prepared on the Si(100) and stainless steel substrates at room temperature by RF magnetron sputtering, then were changed into crystalline SiC films with annealing process. In order to obtain the high quality SiC films, TiN, Al2O3 and AlN buffer layers were prepared on the substrates respectively. The effects of gas pressure, gas flow, sputtering power and annealing temperature on the film structures were given. We researched the technology of SiC thin films grown on the stainless steel and silicon substrates, and discussed the effects of process parameters on SiC thin films growth and performance. By XRD, AFM, PL, hardness testing and other means, the structure, morphology, optical properties and mechanical properties of the films were characterized. The main contents are as follows:
The first chapter outlines the SiC crystal structure, properties, preparation methods, research situation and application prospects. Through the analysis of SiC crystal structure, properties and preparing processes, we can understand the SiC material deeply.
The second chapter introduces the development and the principle of magnetron sputtering, and describes the deposited processes of films and gives a summary about how to inspect the thin films.
Chapter three researches the effects of sputtering parameters on SiC thin films grown on different substrates, such as sputtering pressure, Ar flow, bias and annealing temperature. The XRD, AFM and hardness testing are used to characterize the structure, morphology and performances of the SiC films.
The fourth chapter mainly discusses the TiN, Al2O3 and AlN buffer layers, and analyses the effects of substrates, gas pressure, gas flow, sputtering power and annealing temperature on the structure of these films.
Chapter five mainly discusses the different performances about single layer SiC film and bilayer SiC film on TiN, Al2O3 and AlN buffer layers then analyses the impacts of annealing on optical properties of SiC thin films on Si(100) substrates, finally researches
the effects of annealing on hardness of SiC films grown on stainless steel substrates. Chapter six gets conclusions and outlooks future.
引文
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