离子注入/辐照Al_2O_3、SiO_2的光学特性研究
摘要
Al203是从紫外-可见到近红外(0.2-2μm)的宽带隙光学材料,作为一种重要的氧化物光学晶体,被大量应用于各种光学器件、高强度激光器、航空航天领域、军事装置及性能优良的红外窗口材料、航天器和聚变反应堆中,又常用做中子辐射损伤标准检测器。Si02材料是广泛应用的光电材料。在一些恶劣的辐射环境中,大量的中子和其它粒子的长期辐照产生的辐照损伤一般都会影响材料性能甚至可导致严重事故的发生。在模拟研究一定注量的中子辐照Al203和Si02材料中低能离子注入和高能重离子辐照对材料内部结构变化方面具有极其优越的条件。因此,Al203和Si02材料的辐照损伤、结构和光学性能成为光电材料和半导体器件等开发应用的重要研究方向。一定离子的掺杂在蓝宝石和石英晶体中在光学性能方面拥有许多特殊的用途。近年来随着离子注入这些晶体材料研究的深入,发现了该材料具有不少新性能。
本项工作研究了惰性气体离子注入以及高能重离子辐照单晶Al203和Si02材料引起的发光特性。如：110keV的He+、Ne+、Ar+注入600K高温的Al203单晶；600keV、2MeV和4MeV Ar离子辐照Al203单晶；180keV、460keV、3MeV和6MeV的Xe23+辐照Al203单晶；110keV的He+注入Al203单晶及随后230MeV的208Pb27+辐照并在不同温度条件下退火；230MeV的208Pb27+和308MeV的Xe23+辐照Al203单晶；600keV、2MeV、4MeV和95MeV的Ar离子辐照Si02单晶；600keV.4MeV和5MeV Kr离子辐照Si02单晶；400keV、和3MeV的Xe离子辐照Si02单晶；400keV、1MeV、3MeV、5MeV和7MeV的Eu离子辐照Si02单晶等。通过PL光谱、红外光谱、拉曼光谱和透射电镜等测试分析了样品经过注入／辐照后的发光特性和内部结构的变化,系统地对各发光峰进行了一些理论解释,确定了其发光色心。在低能量辐照体系中,简单色心的形成在损伤过程中占据主导地位：高能离子辐照条件下,离子径迹上的能量密度较大,因此缺陷浓度的增大产生了一些缺陷团簇和离子径迹形成了较为复杂的色心发光。
Sapphire is a wide band gap optical material with its broad transmission spectrum from ultraviolet to visible and near-infrared (0.2-2μm). It can be applied in the field of optics and fusion reactors as an insulator, and as the optical window. Silcon dioxide is a Widely Used In photoelectric material. In the reactor and space radiation Environments, Long-term radiation generated irradiation damage of high flux neutron and other particles influence material performance, even bring about accident happening. Low energy ion implantation and high energy heavy ion irradiation are conducive to simulate internal structure change of Al2O3and SiO2irradiated neutron and space radiation. Therefor, irradiation damage, internal structure and optical characteristics of Al2O3and SiO2become important topic of photoelectric material and device development application.
In the present work the photoluminescence (PL) character of sapphire irradiated with inert gases ions and high energy heavy ions were studied. Such as sapphire were implanted with110keV He+, Ne+and Ar+ions,600keV,2MeV and4MeV Ar ions, or180keV,460keV,3MeV and6MeV Xe23+ions. Such as sappires were implanted with110keV He ions and irradiated by Pb27+ions with energy of230MeV and subsequently annealed at600,900and1100K. Sapphires were irradiated with230MeV Pb7+and308MeV Xe23+ions. As well as SiO2single crystals irradiated with600keV,2MeV,4MeV,95MeV Ar ions,600keV,4MeV,5MeV Kr ions,400keV,3MeV Xe ions and400keV,1MeV,3MeV,5MeV,7MeV Eu ions. Optical Characteristics and internal structure change were investigated by Infrared spectrum, fluorescence spectroscopes, Raman spectrum and TEM. Photoluminescence character of color centers created in Al2O3or SiO2crystals under room temperature irradiation with keV-MeV ions shows several characteristic phenomena. In the low-energy regime, single ion tracks are well separated and the damage process is dominated by the formation of simple color centers such as F and F2color centers. For the high energy ions, the energy density in ion tracks produced at high stopping power is larger, and consequently the defect concentration increases significantly. At higher defect densities, various complex defects embedded in the Al2O3or SiO2are more likely to cause three primary colors luminescence of Samples irradiated.
本项工作研究了惰性气体离子注入以及高能重离子辐照单晶Al203和Si02材料引起的发光特性。如：110keV的He+、Ne+、Ar+注入600K高温的Al203单晶；600keV、2MeV和4MeV Ar离子辐照Al203单晶；180keV、460keV、3MeV和6MeV的Xe23+辐照Al203单晶；110keV的He+注入Al203单晶及随后230MeV的208Pb27+辐照并在不同温度条件下退火；230MeV的208Pb27+和308MeV的Xe23+辐照Al203单晶；600keV、2MeV、4MeV和95MeV的Ar离子辐照Si02单晶；600keV.4MeV和5MeV Kr离子辐照Si02单晶；400keV、和3MeV的Xe离子辐照Si02单晶；400keV、1MeV、3MeV、5MeV和7MeV的Eu离子辐照Si02单晶等。通过PL光谱、红外光谱、拉曼光谱和透射电镜等测试分析了样品经过注入／辐照后的发光特性和内部结构的变化,系统地对各发光峰进行了一些理论解释,确定了其发光色心。在低能量辐照体系中,简单色心的形成在损伤过程中占据主导地位：高能离子辐照条件下,离子径迹上的能量密度较大,因此缺陷浓度的增大产生了一些缺陷团簇和离子径迹形成了较为复杂的色心发光。
Sapphire is a wide band gap optical material with its broad transmission spectrum from ultraviolet to visible and near-infrared (0.2-2μm). It can be applied in the field of optics and fusion reactors as an insulator, and as the optical window. Silcon dioxide is a Widely Used In photoelectric material. In the reactor and space radiation Environments, Long-term radiation generated irradiation damage of high flux neutron and other particles influence material performance, even bring about accident happening. Low energy ion implantation and high energy heavy ion irradiation are conducive to simulate internal structure change of Al2O3and SiO2irradiated neutron and space radiation. Therefor, irradiation damage, internal structure and optical characteristics of Al2O3and SiO2become important topic of photoelectric material and device development application.
In the present work the photoluminescence (PL) character of sapphire irradiated with inert gases ions and high energy heavy ions were studied. Such as sapphire were implanted with110keV He+, Ne+and Ar+ions,600keV,2MeV and4MeV Ar ions, or180keV,460keV,3MeV and6MeV Xe23+ions. Such as sappires were implanted with110keV He ions and irradiated by Pb27+ions with energy of230MeV and subsequently annealed at600,900and1100K. Sapphires were irradiated with230MeV Pb7+and308MeV Xe23+ions. As well as SiO2single crystals irradiated with600keV,2MeV,4MeV,95MeV Ar ions,600keV,4MeV,5MeV Kr ions,400keV,3MeV Xe ions and400keV,1MeV,3MeV,5MeV,7MeV Eu ions. Optical Characteristics and internal structure change were investigated by Infrared spectrum, fluorescence spectroscopes, Raman spectrum and TEM. Photoluminescence character of color centers created in Al2O3or SiO2crystals under room temperature irradiation with keV-MeV ions shows several characteristic phenomena. In the low-energy regime, single ion tracks are well separated and the damage process is dominated by the formation of simple color centers such as F and F2color centers. For the high energy ions, the energy density in ion tracks produced at high stopping power is larger, and consequently the defect concentration increases significantly. At higher defect densities, various complex defects embedded in the Al2O3or SiO2are more likely to cause three primary colors luminescence of Samples irradiated.
引文
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