冰冻固结磨料化学机械抛光单晶硅片的基础研究
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摘要
随着超大规模集成电路(ULSI)的发展,芯片的集成度越来越高,因此,对于其基底材料硅片的加工要求也越来越高,不仅要求获得纳米级面型精度和亚纳米级表面粗糙度,而且还要保证其表面和亚表面无损伤。而单晶硅属于硬脆材料,在加工过程中极易发生脆性破坏,对获得高质量的表面带来很大困难。本文针对单晶硅片超精密加工中的困难,提出一种采用冰冻固结磨料抛光垫对单晶硅片进行抛光的创新工艺,对单晶硅片脆塑转变机理、冰冻固结磨料抛光垫的制备及其抛光机理与工艺开展深入研究,为该工艺的实用化开展积极探索。本文完成的主要工作和取得的成果如下:
1.研究了不同温度下单晶硅片的脆塑转变机理
采用维氏硬度计研究了单晶硅片在不同温度下的硬度和裂纹的产生、扩展及特征,分析了温度对单晶硅片脆塑转变机理的影响,研究发现:温度越低,载荷越小,裂纹的形成和扩展越慢;单晶硅片的硬度随载荷的增加而减小,存在“尺寸效应”。
2.研究了单晶硅片塑性模态加工临界切深问题
利用纳米压痕仪的LFM附件,在室温下对单晶硅片进行了刻划,分析了动态情况下单晶硅片的脆塑转变过程,测得临界载荷和临界划深分别为138.64 mN和54.63 nm,并对Bifnao提出的脆塑转变临界压深公式进行了修正。
3.研究了水相体系纳米α-Al2O3、纳米CeO2悬浮液的分散性能
在保持分散液的pH值一定的情况下,通过合理选用超声时间、分散剂种类和浓度,探讨了配制稳定的纳米α-Al2O3、纳米CeO2抛光液的最佳工艺条件,为开发性能优良的纳米α-Al2O3、纳米CeO2抛光液提供了理论指导。
4.研究了冰冻纳米磨料抛光垫的制备方法和工艺
设计制作了冰冻模具,采用梯度降温、分层浇注和分层冷冻法制作了冰冻固结磨料抛光垫,利用热压法加工出了开槽型冰冻固结磨料抛光垫。
5.对冰冻固结磨料抛光垫抛光运动轨迹进行了理论分析和仿真,探讨了冰冻抛光垫抛光运动轨迹对硅片表面质量的影响
仿真分析了偏心距、冰冻抛光垫与工件的转速比以及磨粒颗粒数等因素对抛光轨迹的影响,得出了相应的影响趋势,为解释单晶硅片表面粗糙度的变化提供了基础。
6.对冰冻固结磨料抛光温度场进行了仿真研究
建立了冰冻固结磨料抛光温度场有限元分析模型,通过实验验证了模型的可靠性;分析了压力、主轴转速、偏心距、抛光时间和环境温度对抛光区域温度的影响规律,得出了温度分布云图以及冰冻固结磨料抛光垫的平均融化速度,为合理选择抛光环境温度和加工工艺参数提供了理论依据。
7.开展了冰冻固结磨料抛光垫低温抛光单晶硅片的工艺研究
利用Taguchi法和综合平衡法进行了实验设计,采用自制的冰冻固结磨料抛光垫对单晶硅片进行了抛光实验,分析了各工艺参数(抛光压力、主轴转速、偏心距和抛光时间)对单晶硅片表面粗糙度和去除率的影响,探寻了冰冻固结磨料抛光垫抛光过程的最佳工艺参数,为该工艺的实用化开展了积极探索。
8.研究了冰冻固结磨料抛光垫低温抛光单晶硅片的机理
在宏观条件下研究了Al2O3、玛瑙对单晶硅摩擦磨损行为的影响,为单晶硅宏观摩擦学性能评价及其摩擦学和微细精密加工研究提供了实验基础;从微观摩擦学的角度,采用冰冻摩擦偶件,选用面-面接触,在低温下研究了摩擦偶件对单晶硅片摩擦磨损行为的影响,揭示了单晶硅片的低温抛光机理。分析认为,冰冻抛光属固结磨料化学机械抛光,简称IFA-CMP。
With the development of ultra large scale integration (ULSI), the integrated level of chips is becoming exigenter and exigenter, and the diameters of silicon wafer used as substrate materials are becoming larger and larger. The silicon wafers not only need to have very good flatness and low surface roughness but also have no surface damage or scratches. Silicon is a kind of hard material and easy to fail in a way of wear-out-failure because of brittle fracture, so it is difficult to machine it. Based on this background, a novel polishing technology with ice fixed abrasives pad for silicon wafer was proposed. A series of researches were carried on the mechanism of brittle-ductile transition of silicon wafer, the preparation of ice fixed abrasives pad and the polishing mechanism and technology. The work can provide a basis for the development and industrialization of this novel polishing technology. The main work is as follows:
1. Mechanism of brittle-ductile transition of single silicon wafer at different temperatures. Formation, propagation and length of crack and hardness of single silicon wafer were invested at different temperatures by means of Vickers indentation. The effect of temperature on the mechanism of brittle-ductile transition of single silicon wafer was analyzed.
2. Critical-depth-of-cut of single silicon wafer manchining at ductile mode. The scratch resistance of single silicon wafer at ambient temperature was measured by nanoscratching using nanoindenter. The mechanism of brittle-ductile transition of single silicon wafer at dynamic state was analyzed. The critical load and scratch depth was estimated from the scratch depth profile after the scratching and the friction profile. Based on the properties of silicon wafer obtained from the experiment, the formula of critical-depth-of-cut described by Bifnao was modified.
3. Dispersion and stability ofα-Al2O3 and CeO2 nanopowders in water suspension. In the condition of the pH of the suspension was kept to 10~11, the optimal dispersing conditions ofα-Al2O3 and CeO2 nanopowders in water suspension were explored by selecting proper supersonic time and surfactant concentration. The work can guide to prepare polishing solution with high performance.
4. Techniques for preparing ice fixed abrasives pad.The ice mold was designed and fabricated and then the ice fixed abrasives pad was fabricated by gradient freezing, laminar pouring and iceing. Using heat pressing, the ice fixed abrasives pad with grooves was fabricated.
5. Simulation on the polishing trajectories of the ice fixed abrasives pad and their effects on the surface quality of silicon wafer. The effects of the eccentricity, ratio of transmission between the polishing pad and the workpiece and the number of grits on the trajectories were simulated, which can give an explanation of the changes of the surface roughness.
6. Simulation study of the temperature field on polishing with ice fixed abrasives pad. The finite element model of temperature field of ice polishing was established. Effects of different processing parameters on temperature distribution and melting rate of the ice fixed abrasives pad were researched, which is theoretically useful for choosing the ambient temperature and the processing parameters.
7. Technologic processes of IFA-CMP. Taguchi method and overall balance method were applied for optimization of the polishing conditions. Each processing parameter which affected the surface roughness and material removal rate in polishing silicon wafer was experimentally described in detail. The optimum processing parameter was obtained, which lay a basis for the application of IFA-CMP.
8. Ice polishing mechanism of silicon wafer. The friction and wear behaviors of silicon wafer sliding against Al2O3 and agate at ambient air and low contact stress under unlubricated condition were studied using a UMT-2MT test rig. The results can provide experimental basis for the evaluation of sliding wear behavior and the study of ultra-precision finishing of silicon wafer. The friction tests of blanket silicon wafers against ice counterparts were carried out to investigate the friction effect and mechanism. The results showed that the removal of material was dominated by the coactions of ductile regime machining and chemical corrosion. A model of material removal of IFA-CMP was built.
1.研究了不同温度下单晶硅片的脆塑转变机理
采用维氏硬度计研究了单晶硅片在不同温度下的硬度和裂纹的产生、扩展及特征,分析了温度对单晶硅片脆塑转变机理的影响,研究发现:温度越低,载荷越小,裂纹的形成和扩展越慢;单晶硅片的硬度随载荷的增加而减小,存在“尺寸效应”。
2.研究了单晶硅片塑性模态加工临界切深问题
利用纳米压痕仪的LFM附件,在室温下对单晶硅片进行了刻划,分析了动态情况下单晶硅片的脆塑转变过程,测得临界载荷和临界划深分别为138.64 mN和54.63 nm,并对Bifnao提出的脆塑转变临界压深公式进行了修正。
3.研究了水相体系纳米α-Al2O3、纳米CeO2悬浮液的分散性能
在保持分散液的pH值一定的情况下,通过合理选用超声时间、分散剂种类和浓度,探讨了配制稳定的纳米α-Al2O3、纳米CeO2抛光液的最佳工艺条件,为开发性能优良的纳米α-Al2O3、纳米CeO2抛光液提供了理论指导。
4.研究了冰冻纳米磨料抛光垫的制备方法和工艺
设计制作了冰冻模具,采用梯度降温、分层浇注和分层冷冻法制作了冰冻固结磨料抛光垫,利用热压法加工出了开槽型冰冻固结磨料抛光垫。
5.对冰冻固结磨料抛光垫抛光运动轨迹进行了理论分析和仿真,探讨了冰冻抛光垫抛光运动轨迹对硅片表面质量的影响
仿真分析了偏心距、冰冻抛光垫与工件的转速比以及磨粒颗粒数等因素对抛光轨迹的影响,得出了相应的影响趋势,为解释单晶硅片表面粗糙度的变化提供了基础。
6.对冰冻固结磨料抛光温度场进行了仿真研究
建立了冰冻固结磨料抛光温度场有限元分析模型,通过实验验证了模型的可靠性;分析了压力、主轴转速、偏心距、抛光时间和环境温度对抛光区域温度的影响规律,得出了温度分布云图以及冰冻固结磨料抛光垫的平均融化速度,为合理选择抛光环境温度和加工工艺参数提供了理论依据。
7.开展了冰冻固结磨料抛光垫低温抛光单晶硅片的工艺研究
利用Taguchi法和综合平衡法进行了实验设计,采用自制的冰冻固结磨料抛光垫对单晶硅片进行了抛光实验,分析了各工艺参数(抛光压力、主轴转速、偏心距和抛光时间)对单晶硅片表面粗糙度和去除率的影响,探寻了冰冻固结磨料抛光垫抛光过程的最佳工艺参数,为该工艺的实用化开展了积极探索。
8.研究了冰冻固结磨料抛光垫低温抛光单晶硅片的机理
在宏观条件下研究了Al2O3、玛瑙对单晶硅摩擦磨损行为的影响,为单晶硅宏观摩擦学性能评价及其摩擦学和微细精密加工研究提供了实验基础;从微观摩擦学的角度,采用冰冻摩擦偶件,选用面-面接触,在低温下研究了摩擦偶件对单晶硅片摩擦磨损行为的影响,揭示了单晶硅片的低温抛光机理。分析认为,冰冻抛光属固结磨料化学机械抛光,简称IFA-CMP。
With the development of ultra large scale integration (ULSI), the integrated level of chips is becoming exigenter and exigenter, and the diameters of silicon wafer used as substrate materials are becoming larger and larger. The silicon wafers not only need to have very good flatness and low surface roughness but also have no surface damage or scratches. Silicon is a kind of hard material and easy to fail in a way of wear-out-failure because of brittle fracture, so it is difficult to machine it. Based on this background, a novel polishing technology with ice fixed abrasives pad for silicon wafer was proposed. A series of researches were carried on the mechanism of brittle-ductile transition of silicon wafer, the preparation of ice fixed abrasives pad and the polishing mechanism and technology. The work can provide a basis for the development and industrialization of this novel polishing technology. The main work is as follows:
1. Mechanism of brittle-ductile transition of single silicon wafer at different temperatures. Formation, propagation and length of crack and hardness of single silicon wafer were invested at different temperatures by means of Vickers indentation. The effect of temperature on the mechanism of brittle-ductile transition of single silicon wafer was analyzed.
2. Critical-depth-of-cut of single silicon wafer manchining at ductile mode. The scratch resistance of single silicon wafer at ambient temperature was measured by nanoscratching using nanoindenter. The mechanism of brittle-ductile transition of single silicon wafer at dynamic state was analyzed. The critical load and scratch depth was estimated from the scratch depth profile after the scratching and the friction profile. Based on the properties of silicon wafer obtained from the experiment, the formula of critical-depth-of-cut described by Bifnao was modified.
3. Dispersion and stability ofα-Al2O3 and CeO2 nanopowders in water suspension. In the condition of the pH of the suspension was kept to 10~11, the optimal dispersing conditions ofα-Al2O3 and CeO2 nanopowders in water suspension were explored by selecting proper supersonic time and surfactant concentration. The work can guide to prepare polishing solution with high performance.
4. Techniques for preparing ice fixed abrasives pad.The ice mold was designed and fabricated and then the ice fixed abrasives pad was fabricated by gradient freezing, laminar pouring and iceing. Using heat pressing, the ice fixed abrasives pad with grooves was fabricated.
5. Simulation on the polishing trajectories of the ice fixed abrasives pad and their effects on the surface quality of silicon wafer. The effects of the eccentricity, ratio of transmission between the polishing pad and the workpiece and the number of grits on the trajectories were simulated, which can give an explanation of the changes of the surface roughness.
6. Simulation study of the temperature field on polishing with ice fixed abrasives pad. The finite element model of temperature field of ice polishing was established. Effects of different processing parameters on temperature distribution and melting rate of the ice fixed abrasives pad were researched, which is theoretically useful for choosing the ambient temperature and the processing parameters.
7. Technologic processes of IFA-CMP. Taguchi method and overall balance method were applied for optimization of the polishing conditions. Each processing parameter which affected the surface roughness and material removal rate in polishing silicon wafer was experimentally described in detail. The optimum processing parameter was obtained, which lay a basis for the application of IFA-CMP.
8. Ice polishing mechanism of silicon wafer. The friction and wear behaviors of silicon wafer sliding against Al2O3 and agate at ambient air and low contact stress under unlubricated condition were studied using a UMT-2MT test rig. The results can provide experimental basis for the evaluation of sliding wear behavior and the study of ultra-precision finishing of silicon wafer. The friction tests of blanket silicon wafers against ice counterparts were carried out to investigate the friction effect and mechanism. The results showed that the removal of material was dominated by the coactions of ductile regime machining and chemical corrosion. A model of material removal of IFA-CMP was built.
引文
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