水热法合成Mn_xZn_（1-x）O晶体和纳米薄水铝石晶片
摘要
本文采用水热法合成了ZnO晶体，并通过掺杂Mn化合物合成了Mn_xZn_(1-x)O稀磁半导体，研究了其低温下的磁化性能和铁磁性能，发现水热合成的晶体出现明显的铁磁性，居里温度达到50K。论文的完成将对探索Mn_xZn_(1-x)O稀磁半导体单晶的生产工艺有一定的指导意义。本文还研究了水热法合成多形态薄片状纳米薄水铝石。在430℃，矿化剂为1mol*L~(-1)KOH、1mol*L~(-1)KBr，填充度35％时，前驱物为Al(OH)_3，所合成的晶体为纯刚玉晶体。当添加一定量的Ti化合物或混合的Ti、Fe离子时，刚玉晶体的合成过程受到一定的影响，当Ti离子含量较低时可以合成出蓝宝石晶体或Ti宝石晶体；含量较高时AlO_6生长基元的脱羟基过程受到影响，只能合成出薄水铝石或纳米薄片状阵列，且晶体薄片呈现规则的排列，显示了强烈的纳米自组织倾向。此项工作对研究水热条件下晶体的自组织生长过程有一定的意义。
ZnO crystals were synthesized by hydrothermal method in this work. We obtained MnxZn1-xO DMS by doping the Mn composition and studied its magnetic and ferromagnetic properties. The crystals showed obvious ferromagnetism and the Tc reached 50K. This thesis will provide guidance for exploring the synthesis conditions of MnxZn1-xO DMS. The sheet nano boehmites with different morphology were successfully synthesized by hydrothermal method. The pure a-Al2O3 were first obtained when the lmolL-1KOH andlmolL-1 KBr were used as mineralize at 430癈 with the fill factor of-35% and the Al (OH)3 precursor. When the dopants were Ti ions or the mixture of Ti and Fe ions, the synthesis process of a-Al2O3 was affected. Sapphire crystals or Ti doped sapphire crystals can be obtained when only the content of Ti was lower. When the content of Ti ion was higher, only the boehmite or the nano sheet matix instead of a-Al2O3 crystal was presented in the product. The sheet crystal exhibits regular arrangement, indicating the intense
tendency of self- assembly. This study is instructive for exploring the self- assembly process of hydrothermal synthesis.
ZnO crystals were synthesized by hydrothermal method in this work. We obtained MnxZn1-xO DMS by doping the Mn composition and studied its magnetic and ferromagnetic properties. The crystals showed obvious ferromagnetism and the Tc reached 50K. This thesis will provide guidance for exploring the synthesis conditions of MnxZn1-xO DMS. The sheet nano boehmites with different morphology were successfully synthesized by hydrothermal method. The pure a-Al2O3 were first obtained when the lmolL-1KOH andlmolL-1 KBr were used as mineralize at 430癈 with the fill factor of-35% and the Al (OH)3 precursor. When the dopants were Ti ions or the mixture of Ti and Fe ions, the synthesis process of a-Al2O3 was affected. Sapphire crystals or Ti doped sapphire crystals can be obtained when only the content of Ti was lower. When the content of Ti ion was higher, only the boehmite or the nano sheet matix instead of a-Al2O3 crystal was presented in the product. The sheet crystal exhibits regular arrangement, indicating the intense
tendency of self- assembly. This study is instructive for exploring the self- assembly process of hydrothermal synthesis.
引文
[1] Laudise R A.Kolb E D.et al.The First Proceeding of the International Hydrothermal Reactions.S4 Sorniya ed,Japan, 1982:527-530
[2] 王秀峰，王永兰，金志浩．水热法制备陶瓷材料研究进展[J]．硅酸盐学报，1995，3：25-30
[3] 施尔畏，夏长泰，王步国，仲维卓．水热法的应用与发展[J]．无机材料学报，1996，11(2)：193-206
[4] N.C.Lias and Ms.E.E.Grudenski. The Growth of High Q Quartz at High Growth Rates[J]. Journal of Crystal Growth, 1973,18:1-6
[5] 施尔畏．水热法紫色水晶的晶体生长[J]．硅酸盐学报，1993，21(4)：319-325
[6] 徐斌．黄、绿水晶的生长及透光特性[J]．硅酸盐学报，1993，12(5)：57-59
[7] 茅忠明，罗静舟．水热溫差法生长人造水晶及其过程控制[J]．上海理工大学学报，1994，16(3)：95-98
[8] 张克从，张乐惠．晶体生长科学与技术(上册)(M)．科学出版社，1997，309-315
[9] Peretti H A,Smith C P.A New Type of Synthetic Ruby on the Market: Offered as hydrothermal Rubies from Vovosibrisk. Australian Gem Mologist, 1993, 18(5): 149-157
[10] Donnay JD H,Harker K.Amer.Mineralogist,1937,22:446
[11] Hartman Perdok W G.. Proc.Koninkl.Nederland Akad Wetenschap, 1952, B55:34-36
[12] Hartman Perdok W G.Acta Cryst.,1955,8:49-52
[13] Hartman Perdok W G.Acta Cryst.,1955,8:521-524
[14] Hartman Perdok W G.Acta Cryst.,1955,8:525-529
[15] Hartman Pin.Crystal Growth:An Introduction,Amsterdam:North-Holland Pub.Co., 1973:367-402
[16] 施尔畏，仲维卓，华素坤等．关于负离子配位多面体生长基元模型，中国科学(E辑)，1998，28(1)：37-45
[17] 李汶军，施尔畏，仲维卓等．负离子配位多面体生长基元的理论模型与晶粒形貌，人工晶体学报，1999，28(2)：117-125
[18] 仲维卓，夏长泰等．中国科学(E辑)，1997，27(1)：9-17
[19] 田明原，施尔畏等．中国科学(E辑)，1998，28(2)：113-118
[20] 王步国，仲维卓等．人工晶体学报，1997，29(2)：101-106
[21] 仲维卓，王步国等．人工晶体学报，1998，27(1)：1-7
[22] 仲维卓，刘光照等．人工晶体学报，1994，23(1)：1-7
[23] 张克从，张乐惠．晶体生长科学与技术(上册)[M]．科学出版社，1997，253-271
[24] P Yu,et al.23nd Int Conf on the Physics of semiconductor[C].Singapore,World Science,1996,2:1453
[25] Bagnall D M,et al.Appl.Phys.lett.1997,70(17):2230
[26] Z K Tang, et al.Solid State Communications.1997,103(8):459
[27] Rotert F Service.Science.1997,276(9):895
[28] Cho H.Appl.Phys.Lett.1998,73(25):3656
[29] Cho H.Phys.Rev.lett.1999,82(11):2278
[30] Cho H.Phys.Rev.lett.1999,82(11):2278
[31] Michaet H Huang,et al.Science.2001,292(8): 1897
[32] Yang P D.Advance Funct Materials.2002,12(5):323
[33] Michaet H Huang, et al.Advance Materials.2001,12(3): 113
[34] Wu J J,et al.Advance Materials.2002,14(3):215
[35] Wu J J, et al.Phys.Appl.Lett.2002,81(12):1312
[36] Dong L F, et al. Phys.Appl.Lett.2003,82(7):1096
[37] Hu J Q,et al. Phys.Appl.Lett.2003,82(9):1401
[38] T Aoki,et al.Phys.stat.sol.2002,229(2):911
[39] Gao X L,et al.Optical Materials.2002,19:229
[40] Xiang G, et al.Appl.Phys.Lett.2002,80(7):1195
[41] US patent,6,527,858
[42] OhtomoA,et al.Appl.Phys.Lett.1998,72(19):2466
[43] Jin Y B,et al.Solid State Communications.2001,119(6):409
[44] Hiromichi Ohta, et al.Key Engineering Materials.2002,214-215:75
[45] 中国专利．No．02136640．3,02136641．1
[46] 刘舒曼等．物理学报．2000，49(11)：2307
[47] 张喜田等．人工晶体学报．2001，30(4)：289
[48] Zhang X T, et al.Thin Solid Films.2002,413:257
[49] N Y Garces,et al.Appl.Phys.Lett.2002,81(4):622
[50] W M Jadwisienezak,et al.J.of Electronic Materials.2002,31(7):776
[51] L.N.Demianets,et al.Solution Growth.2002,47 Suppl:S86
[52] T.Sekiguch, et al.J of Crystal Growth.2000,214/215:72
[53] M.Suscavage,et al.Mat.Res.Symp.Proc.1999,537:G3.40(G3.40.1-6)(MRS Internct J.Nitride Semicond.Res.4S1,G3.40(1999))
[54] Toru Aoki,et al.Applied Physics Letters.2000,76(22):3257
[55] A Urbiet, et al.Materials Science and Engineering.2002,B91-92:345
[56] A Urbiet, et al.J.Phys.D:Appl.Phys.2001,34:2945
[57] T.koida, et al.Applied Physics Letters.2003,82(4):532
[58] Naoki Ohashi,et al.J.Applied Physics.2002,91(60):3658
[59] Xiang W H,et al.Chin.Phys.Lett.2003,20(2):296
[60] Yuji Matsumoto,et al.Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide. Science.2001,291:854-856
[61] T. Dietl,et al.Zener Model Description of Ferromagnetism in Zine-Blende Semiconductors. Science. 2000,287:1019-1022
[62] Parmanand Sharma, et al. Ferromagnetism above room temperature in bulk and transparent thin films of Mn-Doped ZnO.Nature Materials 2.2003,10:637-677
[63] Tomasz Dietl.Dilute magnetic semiconductors:functional ferromagnets. Nature Materials 2.2003,10:646-648
[64] D.Chiba,M.Yamanouchi.F.Matsukura, and H.Ohno.Electrical Manipulation of Magnetization Reversal in ferromagnetic Semiconductor.Science.2003,301:943-945
[65] Y.D.Park, et al.A Group-Ⅳ Ferromagnetic Semiconductor:MnxGe(1_x).Science. 2002, 295, 25:651-654
[66] H.Ohho.Making Nonmagnetic Semiconductors Ferromagnetic.Science.1998,281,14:951-956
[67] Nguyen Hoa Hong,et al.Co distribution in ferromagnetic rutile Co-doped TiO_2 thin films grown by laser ablation on silicon substrates.Appl.Phys.Lett.2003,83:3129
[68] S.J.Pearton, et al.Wide band gap ferromagnetic semiconductors and oxides.J.Appl.Phys.2003, 93;1
[69] M.L.Reed, et al.Room temperature ferromagnetic properties of (Ga, Mn) N.Appl. Phys. Lett. 2001,79:3473
[70] Yoon.Shon. et al.Ferromagnetic behavior of p-type GaN epilayer implanted with Fe~+ ions.J.Appl.Phys.2004,95:761
[71] H.Saito,et al.Room-Temperature ferromagnetism in a Ⅱ-Ⅵ Diluted Magnetic Semiconductor Zn_(1_x)Cr_xTe.Phys.Rev.Lett.2003,90:207202
[72] Parle V.Radovanovic and Daniel R Gamelin. High-Temperature Ferromagnetism in Ni~(2+)- Doped ZnO Aggregates prepared from Colloidal Diluted Magnetic Semiconductor Quantum Dots.Phys .Rev.Lett. 2003,91:157202
[74] Hyeon-Jun Lee, et al.Study of diluted magnetic semiconductor:Co-doped ZnO. Appl. Phys. Lett.2002,81:4020
[75] S-J.Han.et al.A Key to room-temperature ferromagnetism in Fe-_doped ZnO:O. Appl. Phys. Lett.2002,81:4212
[76] D.P.Norton, et al.Ferromagnetism in cobalt-implanted ZnO. Appl.Phys.Lett.2003,83:5488
[77] Sang Eon Park, et al.Room-temperature ferromagnetism in Cr-doped GaN si single crystals. Appl.Phys.Lett.2002,80:4187
[78] S.W.Jung,et al.Ferromagnetic properties of Zn_(1-x)Mn_xO epitaxial thin films. Appl. Phys. Lett. 2002,80:4561
[79] Y.Q.Chang,et al.Synthesis,optical,and magnetic properties of diluted magnetic semiconductor Zn_(1-x)Mn_xO nanowires via vapor phase growth.Appl.Phys.Lett.2003,83:4020
[80] V.A.L.Roy, et al.Magnetic properties of Mn doped ZnO tetrapod structures. Appl. Phys. Lett. 2004, 84:756
[81] D.P.Norton,et al.Ferromagnetism in Mn-implanted ZnO:Sn single crystals. Appl. Phys. Lett. 2003, 82:239
[82] K.Ip et al. Ferromagnetism in Mn-and Co-implanted ZnO nanorods. J.Vac. Sci. Technol. 2003,B21:1476
[83] S-J.Han, et al.Magnetism in Mn-doped ZnO bulk samples prepared by solid state reaction. Appl. Phys. Lett.2003,83:920
[84] X.M.Cheng and C.L.Chien.Magnetic properties of epitaxial Mn-doped ZnO thin films.J.Appl.Phys.2003,93:7876
[85] K.Ando,et al.Magneto-optical properties of ZnO-based diluted magnetic semiconductors. J.Appl.Phys.2001,89:7284
[86] J.-Y.Kim,et al.Ferromagnetism Induced by Clustered Co in Co-Doped Anatase TiO_2 Thin Films .Phys.Rev.Lett.2003,90:017401
[87] Jung H.Park,et al.Co-metal clustering as the origin of ferromagnetism in Co-doped ZnO thin films.Appl.Phys.Lett.2004,84:1338
[88] Eun-Cheol Lee andK.J.Chang.Ferromagnetic versus antiferromagnetic interaction in Co-doped ZnO.Phys.Rev.B.2004,69:085205
[89] S.A.Chambers,et al.Clusters and magnetism in epitaxial Co-doped TiO_2 anatase.Appl.Phys.Lett.2003,82:1257
[90] K.Ando.Magneto-optical studies of s.p-d exchange interactions in GaN:Mn with room-temperature ferromagnetism.2003,82:100
[91] M.Zajc,et al.Possible origin of ferromagnetism in (Ga, Mn)N.J.Appl.Phys.2003,93:4715
[92] S.Kolesnik,B.Dabrowski and J.Mais.Structural and magnetic properties of transition metal substituted ZnO.J.Appl.Phys.2004,95:2582
[93] Nguyen Hoa Hong,et al.Co distribution in ferromagnetic rutile Co-doped TiO_2 thin films grown by by laser ablation on silicon substrates.Appl.Phys.Lett.2003,83:3129
[94] Sang Sub Kim,et al.Heteroepitaxial growth behavior of Mn-doped ZnO thin films on Al_2O_3(0001) by pulsed laser deposition.Appl.Phys.2004,95:454
[95] 韦志仁、董国义等．矿化剂浓度和温度对水热法合成氧化锌晶体形态的影响[J]．发光学报，2003，4(4)：80-84
[2] 王秀峰，王永兰，金志浩．水热法制备陶瓷材料研究进展[J]．硅酸盐学报，1995，3：25-30
[3] 施尔畏，夏长泰，王步国，仲维卓．水热法的应用与发展[J]．无机材料学报，1996，11(2)：193-206
[4] N.C.Lias and Ms.E.E.Grudenski. The Growth of High Q Quartz at High Growth Rates[J]. Journal of Crystal Growth, 1973,18:1-6
[5] 施尔畏．水热法紫色水晶的晶体生长[J]．硅酸盐学报，1993，21(4)：319-325
[6] 徐斌．黄、绿水晶的生长及透光特性[J]．硅酸盐学报，1993，12(5)：57-59
[7] 茅忠明，罗静舟．水热溫差法生长人造水晶及其过程控制[J]．上海理工大学学报，1994，16(3)：95-98
[8] 张克从，张乐惠．晶体生长科学与技术(上册)(M)．科学出版社，1997，309-315
[9] Peretti H A,Smith C P.A New Type of Synthetic Ruby on the Market: Offered as hydrothermal Rubies from Vovosibrisk. Australian Gem Mologist, 1993, 18(5): 149-157
[10] Donnay JD H,Harker K.Amer.Mineralogist,1937,22:446
[11] Hartman Perdok W G.. Proc.Koninkl.Nederland Akad Wetenschap, 1952, B55:34-36
[12] Hartman Perdok W G.Acta Cryst.,1955,8:49-52
[13] Hartman Perdok W G.Acta Cryst.,1955,8:521-524
[14] Hartman Perdok W G.Acta Cryst.,1955,8:525-529
[15] Hartman Pin.Crystal Growth:An Introduction,Amsterdam:North-Holland Pub.Co., 1973:367-402
[16] 施尔畏，仲维卓，华素坤等．关于负离子配位多面体生长基元模型，中国科学(E辑)，1998，28(1)：37-45
[17] 李汶军，施尔畏，仲维卓等．负离子配位多面体生长基元的理论模型与晶粒形貌，人工晶体学报，1999，28(2)：117-125
[18] 仲维卓，夏长泰等．中国科学(E辑)，1997，27(1)：9-17
[19] 田明原，施尔畏等．中国科学(E辑)，1998，28(2)：113-118
[20] 王步国，仲维卓等．人工晶体学报，1997，29(2)：101-106
[21] 仲维卓，王步国等．人工晶体学报，1998，27(1)：1-7
[22] 仲维卓，刘光照等．人工晶体学报，1994，23(1)：1-7
[23] 张克从，张乐惠．晶体生长科学与技术(上册)[M]．科学出版社，1997，253-271
[24] P Yu,et al.23nd Int Conf on the Physics of semiconductor[C].Singapore,World Science,1996,2:1453
[25] Bagnall D M,et al.Appl.Phys.lett.1997,70(17):2230
[26] Z K Tang, et al.Solid State Communications.1997,103(8):459
[27] Rotert F Service.Science.1997,276(9):895
[28] Cho H.Appl.Phys.Lett.1998,73(25):3656
[29] Cho H.Phys.Rev.lett.1999,82(11):2278
[30] Cho H.Phys.Rev.lett.1999,82(11):2278
[31] Michaet H Huang,et al.Science.2001,292(8): 1897
[32] Yang P D.Advance Funct Materials.2002,12(5):323
[33] Michaet H Huang, et al.Advance Materials.2001,12(3): 113
[34] Wu J J,et al.Advance Materials.2002,14(3):215
[35] Wu J J, et al.Phys.Appl.Lett.2002,81(12):1312
[36] Dong L F, et al. Phys.Appl.Lett.2003,82(7):1096
[37] Hu J Q,et al. Phys.Appl.Lett.2003,82(9):1401
[38] T Aoki,et al.Phys.stat.sol.2002,229(2):911
[39] Gao X L,et al.Optical Materials.2002,19:229
[40] Xiang G, et al.Appl.Phys.Lett.2002,80(7):1195
[41] US patent,6,527,858
[42] OhtomoA,et al.Appl.Phys.Lett.1998,72(19):2466
[43] Jin Y B,et al.Solid State Communications.2001,119(6):409
[44] Hiromichi Ohta, et al.Key Engineering Materials.2002,214-215:75
[45] 中国专利．No．02136640．3,02136641．1
[46] 刘舒曼等．物理学报．2000，49(11)：2307
[47] 张喜田等．人工晶体学报．2001，30(4)：289
[48] Zhang X T, et al.Thin Solid Films.2002,413:257
[49] N Y Garces,et al.Appl.Phys.Lett.2002,81(4):622
[50] W M Jadwisienezak,et al.J.of Electronic Materials.2002,31(7):776
[51] L.N.Demianets,et al.Solution Growth.2002,47 Suppl:S86
[52] T.Sekiguch, et al.J of Crystal Growth.2000,214/215:72
[53] M.Suscavage,et al.Mat.Res.Symp.Proc.1999,537:G3.40(G3.40.1-6)(MRS Internct J.Nitride Semicond.Res.4S1,G3.40(1999))
[54] Toru Aoki,et al.Applied Physics Letters.2000,76(22):3257
[55] A Urbiet, et al.Materials Science and Engineering.2002,B91-92:345
[56] A Urbiet, et al.J.Phys.D:Appl.Phys.2001,34:2945
[57] T.koida, et al.Applied Physics Letters.2003,82(4):532
[58] Naoki Ohashi,et al.J.Applied Physics.2002,91(60):3658
[59] Xiang W H,et al.Chin.Phys.Lett.2003,20(2):296
[60] Yuji Matsumoto,et al.Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide. Science.2001,291:854-856
[61] T. Dietl,et al.Zener Model Description of Ferromagnetism in Zine-Blende Semiconductors. Science. 2000,287:1019-1022
[62] Parmanand Sharma, et al. Ferromagnetism above room temperature in bulk and transparent thin films of Mn-Doped ZnO.Nature Materials 2.2003,10:637-677
[63] Tomasz Dietl.Dilute magnetic semiconductors:functional ferromagnets. Nature Materials 2.2003,10:646-648
[64] D.Chiba,M.Yamanouchi.F.Matsukura, and H.Ohno.Electrical Manipulation of Magnetization Reversal in ferromagnetic Semiconductor.Science.2003,301:943-945
[65] Y.D.Park, et al.A Group-Ⅳ Ferromagnetic Semiconductor:MnxGe(1_x).Science. 2002, 295, 25:651-654
[66] H.Ohho.Making Nonmagnetic Semiconductors Ferromagnetic.Science.1998,281,14:951-956
[67] Nguyen Hoa Hong,et al.Co distribution in ferromagnetic rutile Co-doped TiO_2 thin films grown by laser ablation on silicon substrates.Appl.Phys.Lett.2003,83:3129
[68] S.J.Pearton, et al.Wide band gap ferromagnetic semiconductors and oxides.J.Appl.Phys.2003, 93;1
[69] M.L.Reed, et al.Room temperature ferromagnetic properties of (Ga, Mn) N.Appl. Phys. Lett. 2001,79:3473
[70] Yoon.Shon. et al.Ferromagnetic behavior of p-type GaN epilayer implanted with Fe~+ ions.J.Appl.Phys.2004,95:761
[71] H.Saito,et al.Room-Temperature ferromagnetism in a Ⅱ-Ⅵ Diluted Magnetic Semiconductor Zn_(1_x)Cr_xTe.Phys.Rev.Lett.2003,90:207202
[72] Parle V.Radovanovic and Daniel R Gamelin. High-Temperature Ferromagnetism in Ni~(2+)- Doped ZnO Aggregates prepared from Colloidal Diluted Magnetic Semiconductor Quantum Dots.Phys .Rev.Lett. 2003,91:157202
[74] Hyeon-Jun Lee, et al.Study of diluted magnetic semiconductor:Co-doped ZnO. Appl. Phys. Lett.2002,81:4020
[75] S-J.Han.et al.A Key to room-temperature ferromagnetism in Fe-_doped ZnO:O. Appl. Phys. Lett.2002,81:4212
[76] D.P.Norton, et al.Ferromagnetism in cobalt-implanted ZnO. Appl.Phys.Lett.2003,83:5488
[77] Sang Eon Park, et al.Room-temperature ferromagnetism in Cr-doped GaN si single crystals. Appl.Phys.Lett.2002,80:4187
[78] S.W.Jung,et al.Ferromagnetic properties of Zn_(1-x)Mn_xO epitaxial thin films. Appl. Phys. Lett. 2002,80:4561
[79] Y.Q.Chang,et al.Synthesis,optical,and magnetic properties of diluted magnetic semiconductor Zn_(1-x)Mn_xO nanowires via vapor phase growth.Appl.Phys.Lett.2003,83:4020
[80] V.A.L.Roy, et al.Magnetic properties of Mn doped ZnO tetrapod structures. Appl. Phys. Lett. 2004, 84:756
[81] D.P.Norton,et al.Ferromagnetism in Mn-implanted ZnO:Sn single crystals. Appl. Phys. Lett. 2003, 82:239
[82] K.Ip et al. Ferromagnetism in Mn-and Co-implanted ZnO nanorods. J.Vac. Sci. Technol. 2003,B21:1476
[83] S-J.Han, et al.Magnetism in Mn-doped ZnO bulk samples prepared by solid state reaction. Appl. Phys. Lett.2003,83:920
[84] X.M.Cheng and C.L.Chien.Magnetic properties of epitaxial Mn-doped ZnO thin films.J.Appl.Phys.2003,93:7876
[85] K.Ando,et al.Magneto-optical properties of ZnO-based diluted magnetic semiconductors. J.Appl.Phys.2001,89:7284
[86] J.-Y.Kim,et al.Ferromagnetism Induced by Clustered Co in Co-Doped Anatase TiO_2 Thin Films .Phys.Rev.Lett.2003,90:017401
[87] Jung H.Park,et al.Co-metal clustering as the origin of ferromagnetism in Co-doped ZnO thin films.Appl.Phys.Lett.2004,84:1338
[88] Eun-Cheol Lee andK.J.Chang.Ferromagnetic versus antiferromagnetic interaction in Co-doped ZnO.Phys.Rev.B.2004,69:085205
[89] S.A.Chambers,et al.Clusters and magnetism in epitaxial Co-doped TiO_2 anatase.Appl.Phys.Lett.2003,82:1257
[90] K.Ando.Magneto-optical studies of s.p-d exchange interactions in GaN:Mn with room-temperature ferromagnetism.2003,82:100
[91] M.Zajc,et al.Possible origin of ferromagnetism in (Ga, Mn)N.J.Appl.Phys.2003,93:4715
[92] S.Kolesnik,B.Dabrowski and J.Mais.Structural and magnetic properties of transition metal substituted ZnO.J.Appl.Phys.2004,95:2582
[93] Nguyen Hoa Hong,et al.Co distribution in ferromagnetic rutile Co-doped TiO_2 thin films grown by by laser ablation on silicon substrates.Appl.Phys.Lett.2003,83:3129
[94] Sang Sub Kim,et al.Heteroepitaxial growth behavior of Mn-doped ZnO thin films on Al_2O_3(0001) by pulsed laser deposition.Appl.Phys.2004,95:454
[95] 韦志仁、董国义等．矿化剂浓度和温度对水热法合成氧化锌晶体形态的影响[J]．发光学报，2003，4(4)：80-84