以Ti-Al薄膜为阻挡层的硅基铁电电容器的集成
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摘要
在不同氮气和氩气流量比的混合气体下,应用磁控溅射法在Si(001)衬底上制备了Ti-Al(10 nm)和Ti-Al-N(10 nm)薄膜,采用X射线衍射仪、扫描电子显微镜、四探针检测仪对Ti-Al和Ti-Al-N薄膜的微结构和阻挡性能进行了表征。实验发现非晶Ti-Al-N薄膜经过750℃的高温处理后仍保持非晶态,各膜层之间没有明显的互扩散和反应,相对于Ti-Al阻挡层材料, N的引入降低了阻挡层材料的吉布斯自由能,增强了阻挡层的高温稳定性,提高了阻挡层的失效温度,证明了具有良好阻挡性能的非晶Ti-Al-N薄膜可以用作Cu互连的阻挡层材料。
应用磁控溅射法在Pt衬底上制备5 nm厚非晶Ti-Al薄膜作为缓冲层,利用脉冲激光沉积法制备Ba0.6Sr0.4TiO3(BST)薄膜,构造了Pt/BST/Pt和Pt/Ti-Al/BST/Ti-Al/Pt电容器,研究了Ti-Al过渡层对Pt/BST/Pt电容器结构及其性能的影响。实验表明,过渡层的引入虽然对BST薄膜的结晶质量没有明显改善,但是它有效地阻止了Pt电极和BST薄膜的互扩散,降低了BST薄膜氧空位的浓度,提高了铁电电容器的介电性能。
采用Ti-Al薄膜分别作为扩散阻挡层和抗氧化阻挡层,应用溶胶-凝胶法构架了La_(0.5)Sr_(0.5)CoO_3 (LSCO)/Pb(Zr_(0.4)Ti_(0.6))O_3 (PZT)/La_(0.5)Sr_(0.5)CoO_3 (LSCO)/Ti-Al/Cu/Ti-Al/Si铁电电容器,实现了Cu薄膜与铁电电容器的集成。通过铁电测试仪对LSCO/PZT/LSCO电容器的铁电性能进行了测量。在驱动电压为5 V时,LSCO/PZT/LSCO电容器具有饱和趋势良好的电滞回线、较高的极化强度(23.0μC/cm~2)、较小的矫顽电压(1.6 V)。
Ti-Al film(10 nm),Ti-Al-N film(10 nm) have been deposited on the Si(001) substrates by magnetron sputtering method in various N2/Ar flow ratios. X-ray diffraction (XRD), scanning electron microscope(SEM) and four-point probe measurement (FFP) have been employed to characterize the barrier performance. It is found that the Ti-Al-N films remain amorphous after high temperature annealing up to 750 oC, no obvious reactions or interdiffusion occur in the Cu/Ti-Al-N/Si samples. and no Cu silicide is observed for the Cu/Ti-Al-N/Si sample compared to the Cu/Ti-Al/Si sample in which Cu3Si is observed. This indicates that dissolved nitrogen in Ti-Al can greatly reduce the Gibbs free energy of the barrier, enhance high temperature stability and increase the failure temperature. The Ti-Al-N film is ideal diffusion barrier for Cu metallization.
The effect of amorphous Ti-Al buffer layer deposited by radio-frequency magnetron sputtering on the microstructural and physical properties of Ba0.6Sr0.4TiO3 (BST) film prepared by pulsed laser deposition technique on Pt/Ti/SiO2/Si(001) substrates was studied. It is found that the Ti-Al buffer layer can effectively prevent the interdiffusion between Pt electrode and BST film, lower the concentration of oxygen vacancy of the BST film, and improve the dielectric properties of the BST capacitors.
La_(0.5)Sr_(0.5)CoO_3 (LSCO)/Pb(Zr_(0.4)Ti_(0.6))O_3 (PZT)/La_(0.5)Sr_(0.5)CoO_3 (LSCO)/Ti-Al/Cu/Ti-Al/Si heterostructure has been fabricated via both sol-gel and magnetron sputtering methods using Ti-Al film as diffusion barrier layer and oxygen barrier layer. The ferroelectric properties have been measured by a ferroelectric tester. It is found that the LSCO/PZT/LSCO capacitor has very good saturated ferroelectric loop, and the remnant polarization and coercive voltage, measured at 5 V, are ~23.0μC/cm~2 and ~1.6 V, respectively.
应用磁控溅射法在Pt衬底上制备5 nm厚非晶Ti-Al薄膜作为缓冲层,利用脉冲激光沉积法制备Ba0.6Sr0.4TiO3(BST)薄膜,构造了Pt/BST/Pt和Pt/Ti-Al/BST/Ti-Al/Pt电容器,研究了Ti-Al过渡层对Pt/BST/Pt电容器结构及其性能的影响。实验表明,过渡层的引入虽然对BST薄膜的结晶质量没有明显改善,但是它有效地阻止了Pt电极和BST薄膜的互扩散,降低了BST薄膜氧空位的浓度,提高了铁电电容器的介电性能。
采用Ti-Al薄膜分别作为扩散阻挡层和抗氧化阻挡层,应用溶胶-凝胶法构架了La_(0.5)Sr_(0.5)CoO_3 (LSCO)/Pb(Zr_(0.4)Ti_(0.6))O_3 (PZT)/La_(0.5)Sr_(0.5)CoO_3 (LSCO)/Ti-Al/Cu/Ti-Al/Si铁电电容器,实现了Cu薄膜与铁电电容器的集成。通过铁电测试仪对LSCO/PZT/LSCO电容器的铁电性能进行了测量。在驱动电压为5 V时,LSCO/PZT/LSCO电容器具有饱和趋势良好的电滞回线、较高的极化强度(23.0μC/cm~2)、较小的矫顽电压(1.6 V)。
Ti-Al film(10 nm),Ti-Al-N film(10 nm) have been deposited on the Si(001) substrates by magnetron sputtering method in various N2/Ar flow ratios. X-ray diffraction (XRD), scanning electron microscope(SEM) and four-point probe measurement (FFP) have been employed to characterize the barrier performance. It is found that the Ti-Al-N films remain amorphous after high temperature annealing up to 750 oC, no obvious reactions or interdiffusion occur in the Cu/Ti-Al-N/Si samples. and no Cu silicide is observed for the Cu/Ti-Al-N/Si sample compared to the Cu/Ti-Al/Si sample in which Cu3Si is observed. This indicates that dissolved nitrogen in Ti-Al can greatly reduce the Gibbs free energy of the barrier, enhance high temperature stability and increase the failure temperature. The Ti-Al-N film is ideal diffusion barrier for Cu metallization.
The effect of amorphous Ti-Al buffer layer deposited by radio-frequency magnetron sputtering on the microstructural and physical properties of Ba0.6Sr0.4TiO3 (BST) film prepared by pulsed laser deposition technique on Pt/Ti/SiO2/Si(001) substrates was studied. It is found that the Ti-Al buffer layer can effectively prevent the interdiffusion between Pt electrode and BST film, lower the concentration of oxygen vacancy of the BST film, and improve the dielectric properties of the BST capacitors.
La_(0.5)Sr_(0.5)CoO_3 (LSCO)/Pb(Zr_(0.4)Ti_(0.6))O_3 (PZT)/La_(0.5)Sr_(0.5)CoO_3 (LSCO)/Ti-Al/Cu/Ti-Al/Si heterostructure has been fabricated via both sol-gel and magnetron sputtering methods using Ti-Al film as diffusion barrier layer and oxygen barrier layer. The ferroelectric properties have been measured by a ferroelectric tester. It is found that the LSCO/PZT/LSCO capacitor has very good saturated ferroelectric loop, and the remnant polarization and coercive voltage, measured at 5 V, are ~23.0μC/cm~2 and ~1.6 V, respectively.
引文
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[2] R. Liu, C. S. Pai, E. Martinez, et al. Interconnect Technology trend for microelectronics [J]. Solid-State Electronics, 1999,43:1003-1009.
[3] S. Rawal, D. P. Norton, K. C. Kim, et al. Ge/HfNx diffusion barrier for Cu metallization on Si [J]. Appl. Phys. Lett., 2006, 89:231914.
[4] H. T. Liu and Z. Q. Wu. Physics, 2001, 30(12):757.
[5] B. Zhao. IC interconnect technology-challenges and opportunities. In: International Conference on Solid-State and Integrated Circuit Technology Proceedings (ICSICT2001),2001:337.
[6] International Technology Roadmap for Semiconductors. Austin,TX:SEMATECH,1999
[7] S. Vaidya, T. T. Sheng, A. K. Sinha, et al . Line width Dependence of electromigration in Evaporated Al-0.5Cu [J]. Appl.Phys.Lett., 1980, 36:464.
[8] S. Q. Wang, S. Suthar, C. Hoeflich, et al. Diffusion barrier properties of TiW between Si and Cu [J]. J. Appl. Phys., 1993, 73(5):2301.
[9] M. A. Nieolet. Ternary amorphous metallic thin films as diffusion barriers for Cu metallization [J]. Applied Surface Science, 1995, 91(l-4):269-276.
[10] S. Rawal, E. Lambers, D. P. Norton, et al. Comparative study of HfNx and Hf-Ge-N copper diffusion barriers on Ge [J]. J. Appl. Phys., 2006, 100:063532.
[11] P. L. Pai and C. H. Ting. Selective electroless copper for VLSI [J]. Interconnection. IEEE Electron Device Lett., 1989(10):423.
[12] E. Korczynski. Interconnect: the new frontier[J]. Solid State Technology, 1998, 41(9):83.
[13] A. Petra, R. Mikko, A. Kai, et al. The growth and diffusion barrier properties of atomic layer deposited NbNx thin films [J]. Thin Solid Films, 2005, 491(1-2):235-241.
[14] N. G. William and J. L. Plawsky. Design of diffusion barriers [J]. Thin Solid Films, 2007, 515:4794–4800.
[15] J. Pelleg, and G. Sade. Diffusion barrier properties of amorphous TiB2 for application in Cu metallization [J]. J. Appl. Phys., 2002, 91(9):6099.
[16] H. C. Chung and C. P. Liu. Effect of crystallinity and Preferred orientation of Ta2N films on diffusion barrier Properties for copper metallization [J]. Surface and Coatings Technology, 2006, 200(10):3122-3126.
[17] Y. Wang, F. Cao, Y. T. Liu, et al. Investigation of Zr-Si-N/Zr bilayered film as diffusion barrier for Cu ultralarge scale integration metallization [J]. Appl.Phys.Lett., 2008, 92:032108.
[18] S. H. Kim, S. S. Oh, K. B. Kima, et al. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization [J]. Appl. Phys. Lett., 2003, 82:4486.
[19] A. Gupta, H. Wang, A. Kvit, et al. Effect of microstructure on diffusion of copper in TiN films [J]. J.Appl. Phys., 2003, 93(9):5210.
[20] T. Laurila, K. Zeng, J. K. Kivilahti, et al. TaC as a diffusion barrier between Si and Cu [J]. J. Appl. Phys., 2002,91(8):5391.
[21] J. P. Chu, and C. H. Lin. Formation of reacted layer at the barrierless Cu(WN)/Si interface [J]. Appl. Phys. Lett., 2005, 87:211902.
[22] D. S. Yoon, H. K. Baik, S. M. Lee, et al. Effect on thermal stability of a Cu/Ta/Si heterostructure of the incorporation of cerium oxide into the barrier [J]. J. Appl. Phys., 1998, 83(12):8074.
[23] H. Jiang, T. J. Klemmer, J. A. Barnard, et al. Epitaxial growth of Cu on Si by magnetron sputtering [J]. J. Vac. Sci. Technol., 1998:3376-3383.
[24] P. Majumder and C. G. Takoudis. Investigation on the diffusion barrier properties of sputtered Mo/W-N thin films in Cu interconnects [J]. Appl. Phys. Lett., 2007, 91:162108.
[25] J. S. Kwak, H. K. Baik, J. H. Kim, et al. Improvement of Ta diffusion barrier performance in Cu metallization by insertion of a thin Zr layer into Ta film [J]. Appl. Phys. Lett., 1998, 72(22):2832.
[26] S. H. Kim, K. T. Nam, A. Datta, et al. Failure mechanism of a multilayer(TiN/Al/TiN) diffusion barrier between copper and silicon [J]. J. Appl. Phys., 2002, 92(9):5512.
[27] L. C. Leu, D. P. Norton, M. E. White, et al. Ir/TaN as a bilayer diffusion barrier for advanced Cu interconnects [J]. Appl. Phys. Lett., 2008, 92:111917.
[28] H. Ono, T. Nakano, and T. Ohta. Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, MO, Ta, W) [J]. Appl. Phys. Lett., 1994, 64(12):1511.
[29] L. Liu, Y. Wang, H. Gong, et al. Annealing effects of tantalum films on Si and SiO2/Si substrates in Various vacuums [J]. J. Appl. Phys., 2001, 90(1):416-420.
[30] M. Y. Yan, K. N. Tu, A.V. Vairagar, et al. Confinement of electromigration induced void propagation in Cu interconnect by a buried Ta diffusion barrier layer [J]. Appl. Phys. Lett., 2005, 87:261906-1.
[31] J. P. Chu, C. H. Lin, and V. S. John. Cu films containing insoluble Ru and RuNx on barrierless si for excellent property improvements [J]. Appl. Phys. Lett., 2007, 91:132109.
[32] S. P. Murarka, J. Steigerwald, R. J. Gutmann, et al. Inlaid copper multilevel interconnections using planarization by chemical -mechanical polishing [J], MRS Bull., 1993, 18:46.
[33] C. Muller, N. Menou, R. Barrett, et al. Nondestructive microstructural diagnostic of integrated ferroelectric capacitor arrays: Correlation with electrical characteristics [J]. J. Appl. Phys., 2006,99: 054504.
[34] K. Takashi, S. Tomohiro, W. Takayuki, et al. Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition [J]. Appl. Phys. Lett., 2002, 80(15):2746-2748.
[35] T. L. Ren , H. J. Zhao, L. T. Liu, et al. Piezoelectric and ferroelectric films for microelectronic applications [J]. Materials Science and Engineering. 2003,99:159-163.
[36] M. Goel. Recent developments in electroceramics [J]. MEMS applications for energy and environment. Ceramics International. 2004,30:1147–1154.
[37] T. Delage, C. Champeaux, A. Catherinot et al. Epitaxial bilayers and trilayers of superconducting and high K materials grown by PLD for microwave applications [J]. Thin Solid Films. 2004,453 -454:273–278.
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