具有相变特性的氧化钒薄膜制备与光学特性研究
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摘要
氧化钒薄膜具有良好的光致相变以及热致相变特性,在热激励方式或者光激励方式下,可以发生金属-半导体相变,其光学透射率和电阻率会发生突变,是应用于光电开关、光调制器件的理想半导体材料。因此,具有良好相变性能的氧化钒薄膜制备工艺,及其电学、光学测试技术成为目前研究的热点。本文利用直流对靶磁控溅射以及双离子束溅射两种方法,结合热处理工艺制备出具有相变特性的氧化钒薄膜,并且采用傅立叶变换红外光谱(FTIR)和太赫兹时域频谱系统(THz-TDS)对薄膜的相变特性进行了测试。
利用直流对靶磁控溅射结合快速热处理工艺,在SiO_2衬底上制备了具有热致相变特性的氧化钒薄膜,相变前后薄膜方块电阻变化最大可达3个数量级。通过X射线光电子能谱(XPS)以及X射线衍射(XRD)分析方法,获知薄膜中以单斜结构的VO_2为主要成分。快速热处理有助于提高薄膜结晶度,减少晶界和晶体缺陷,从而有利于薄膜相变性能的提高。
利用双离子束溅射在氮化硅衬底上沉积的氧化钒薄膜,经氮气环境400℃热处理3小时后,出现了明显的电学和光学相变特性。在相变点45℃附近,薄膜电阻值突变3个数量级。截取氧化钒薄膜在1550nm通讯波段透射率变化情况,在相变点附近红外透射率由32%锐减至1%;另外由980nm泵浦光激发氧化钒薄膜,同样导致薄膜红外透射率由32%降低至2%,为氧化钒薄膜在光控光开关领域的应用奠定了基础。
利用太赫兹时域频谱系统(THz-TDS),对硅和SiO_2衬底上制备的氧化钒薄膜的光学开关特性进行了研究。在光致激发下,硅基氧化钒薄膜光开关各项指标:消光比7.96dB;插入损耗3dB,且具有较大带宽;开关速度最快可达20ns。硅基氧化钒薄膜在太赫兹波段的透射性能具有显著的频率特性。SiO_2衬底上制备的氧化钒薄膜经真空热处理后出现光致相变特性,光致激发前后薄膜的太赫兹透射率变化8%,可应用于光调制器件。
Vanadium Oxide (VO_x) thin films have excellent thermal-induced and photo-induced phase transition, and its metal-semiconductor phase transition could occur under thermal excitation or optical excitation with mutation in resistivity and optical transmission rate. VO_x thin films are the ideal semiconductor materials used in optical switches. At present, there is a research focus on fabrication of VO_x thin films with good phase transition performance, and corresponding optical and electrical test technology. By the methods of direct current facing targets magnetron sputtering and dual ion beam sputtering, combined with annealing process, the VO_x thin films which have phase transition were prepared. The phase transition properties of VO_x thin films were tested by Fourier transform infrared spectroscopy (FTIR) and THz time-domain spectroscopy system (THz-TDS).
Using DC facing magnetron sputtering with rapid thermal annealing process, VO_x thin films with thermal-induced phase transition were prepared. The resistance of VO_x thin films changed up to three orders of magnitude, before and after phase transition. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis informed by the films of the monoclinic structure as the main component of VO_2. Rapid thermal annealing help improve film crystallinity, reducing the grain boundary and crystal defects, thus contributing the improvement of phase transition performance.
By dual ion beam sputtering, VO_x thin films were deposited on Si3N4 substrates. After annealed in N2 atmosphere at 400℃for 3 hours, there was a clear electrical and optical phase transition with VO_x thin films. Near the phase transition point 45℃, the resistance of films had a mutation in three orders of magnitude. At the communication band 1550nm, the optical transmission of VO_x dropped from 32% to 1% before and after phase transition. When VO_x thin films under excitation by 980nm pump laser, it led to lower infrared transmission of VO_x thin films from 32% to 2%. These work laid the foundation for the optical switch.
The optical switching characteristics of VO_x thin films were studied, by using THz-TDS. Under photo excitation, the indicators of VO_x optical switch were excellent, extinction ratio 7.96dB; insertion loss 3dB, and has a large bandwidth; the fastest switching speed up to 20ns. And the transmission properties of VO_x thin films in THz band had a significantly frequency characteristics. VO_x deposited on SiO_2 substrates after annealing in vacuum, photo-induced phase transition occurred. Before and after excitation, the THz transmission changed of 8%, which can be used in optical device.
利用直流对靶磁控溅射结合快速热处理工艺,在SiO_2衬底上制备了具有热致相变特性的氧化钒薄膜,相变前后薄膜方块电阻变化最大可达3个数量级。通过X射线光电子能谱(XPS)以及X射线衍射(XRD)分析方法,获知薄膜中以单斜结构的VO_2为主要成分。快速热处理有助于提高薄膜结晶度,减少晶界和晶体缺陷,从而有利于薄膜相变性能的提高。
利用双离子束溅射在氮化硅衬底上沉积的氧化钒薄膜,经氮气环境400℃热处理3小时后,出现了明显的电学和光学相变特性。在相变点45℃附近,薄膜电阻值突变3个数量级。截取氧化钒薄膜在1550nm通讯波段透射率变化情况,在相变点附近红外透射率由32%锐减至1%;另外由980nm泵浦光激发氧化钒薄膜,同样导致薄膜红外透射率由32%降低至2%,为氧化钒薄膜在光控光开关领域的应用奠定了基础。
利用太赫兹时域频谱系统(THz-TDS),对硅和SiO_2衬底上制备的氧化钒薄膜的光学开关特性进行了研究。在光致激发下,硅基氧化钒薄膜光开关各项指标:消光比7.96dB;插入损耗3dB,且具有较大带宽;开关速度最快可达20ns。硅基氧化钒薄膜在太赫兹波段的透射性能具有显著的频率特性。SiO_2衬底上制备的氧化钒薄膜经真空热处理后出现光致相变特性,光致激发前后薄膜的太赫兹透射率变化8%,可应用于光调制器件。
Vanadium Oxide (VO_x) thin films have excellent thermal-induced and photo-induced phase transition, and its metal-semiconductor phase transition could occur under thermal excitation or optical excitation with mutation in resistivity and optical transmission rate. VO_x thin films are the ideal semiconductor materials used in optical switches. At present, there is a research focus on fabrication of VO_x thin films with good phase transition performance, and corresponding optical and electrical test technology. By the methods of direct current facing targets magnetron sputtering and dual ion beam sputtering, combined with annealing process, the VO_x thin films which have phase transition were prepared. The phase transition properties of VO_x thin films were tested by Fourier transform infrared spectroscopy (FTIR) and THz time-domain spectroscopy system (THz-TDS).
Using DC facing magnetron sputtering with rapid thermal annealing process, VO_x thin films with thermal-induced phase transition were prepared. The resistance of VO_x thin films changed up to three orders of magnitude, before and after phase transition. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis informed by the films of the monoclinic structure as the main component of VO_2. Rapid thermal annealing help improve film crystallinity, reducing the grain boundary and crystal defects, thus contributing the improvement of phase transition performance.
By dual ion beam sputtering, VO_x thin films were deposited on Si3N4 substrates. After annealed in N2 atmosphere at 400℃for 3 hours, there was a clear electrical and optical phase transition with VO_x thin films. Near the phase transition point 45℃, the resistance of films had a mutation in three orders of magnitude. At the communication band 1550nm, the optical transmission of VO_x dropped from 32% to 1% before and after phase transition. When VO_x thin films under excitation by 980nm pump laser, it led to lower infrared transmission of VO_x thin films from 32% to 2%. These work laid the foundation for the optical switch.
The optical switching characteristics of VO_x thin films were studied, by using THz-TDS. Under photo excitation, the indicators of VO_x optical switch were excellent, extinction ratio 7.96dB; insertion loss 3dB, and has a large bandwidth; the fastest switching speed up to 20ns. And the transmission properties of VO_x thin films in THz band had a significantly frequency characteristics. VO_x deposited on SiO_2 substrates after annealing in vacuum, photo-induced phase transition occurred. Before and after excitation, the THz transmission changed of 8%, which can be used in optical device.
引文
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