太赫兹辐射源及太赫兹波导的理论研究
摘要
光电导和光整流是目前应用较为广泛的两种重要的太赫兹辐射产生技术,太赫兹波导传输对太赫兹技术的发展也非常重要。本论文主要研究了光电导和光整流太赫兹源的辐射原理、影响因素和改进方法,模拟了几种材料的太赫兹波导的传输特性。
在对光电导太赫兹源的研究中,首先从光电导开关的发展历程入手,讨论了国内外应用光电导开关作为太赫兹辐射源产生的太赫兹波达到的水平,然后对光电导THz源的辐射原理进行了深入研究,探讨了影响光电导太赫兹源辐射的三个主要因素:光导体、天线几何结构和泵浦激光脉冲宽度。目前在光电导太赫兹源研究中存在的主要问题是辐射波的能量和频率都较低,提出了今后可从光导体、天线几何结构和其他方面提高光电导太赫兹源辐射的强度和频率。
在解释光整流效应的基础上,本论文讨论了国内外应用光整流作为太赫兹辐射源产生的太赫兹波的研究进展,研究了光整流THz源的辐射原理:非线性极化。目前在光整流太赫兹源研究中存在的主要问题是:在非线性晶体中实现相位匹配十分困难,所以辐射的太赫兹波强度较低,提出了提高光整流太赫兹源辐射强度的几种方法。
太赫兹波的传输和操控的研究是一些太赫兹技术能否广泛应用的关键。本文用CST微波工作室软件包模拟了石英、硅、Teflon和HDPE四种材料的太赫兹波导的传输特性,分析了这几种波导结构在太赫兹波段的S参数、端口处的传输场能量、端口处的电场和磁场、整个波导的三维法线分量电场分布和波导的三维切线分量电场分布等。结果表明,在传输的太赫兹波的频率不太高和波导的几何尺寸不太大时,这几种材料可以作为太赫兹波段的波导传输太赫兹波。
At present,photoconductive switches and optical rectification are the two important and widespread methods of terahertz radiation generation. THz waveguide propagation is also very important in the development of THz technology. This paper studied radiation principle, the influence factors and the improvement methods of the photoconductivity and optical rectification THz radiation sources .The transmission characteristics of several materials terahertz waveguide had also been simulated.
In the research of photoconductive THz sources ,at first,the development process of the photoconductive switch was introduced and then the level of THz wave generated by photoconductive switches at home and abroad were discussed. The principle of photoconductive THz sources was studied in-depth. The three primary factors: photoconductor, antenna geometry structure and the width of pump laser pulse which impact the radiation of photoconductive THz sources were explored. At present the main question which exists in the research of photoconductive THz sources is that the wave energy and frequency are low. And the radiation intensity and frequency can be improved from the aspects such as photoconductor, the antenna geometry structure and other areas.
On the basis of explaining optical rectification effect , the level of THz wave generated by optical rectification at home and abroad were discussed in this paper. The radiation principle: non-linear polarization had been studied thoroughly. At present the main question which exists in the research of optical rectification THz source is that it is very difficult to achieve phase matching in the nonlinear crystal. Therefore, the radiation intensity is too low. Several methods to enhance the intensity of optical rectification THz radiation sources were proposed.
How to transmit and manipulate THz wave are the key of some widespread applications of THz technology. CST Microwave Studio software package was used to simulate Si O_2、Si、Teflon and HDPE THz waveguide's transmission property. These types of waveguide structures' S parameter, energy transfer, port department of electric and magnetic fields,three-dimensional waveguide normal and tangential component of electric field distribution were analysed. The results indicated that these materials can be used as the terahertz waveguide when the transmission frequency is not too high and the waveguide geometric size is not too large.
在对光电导太赫兹源的研究中,首先从光电导开关的发展历程入手,讨论了国内外应用光电导开关作为太赫兹辐射源产生的太赫兹波达到的水平,然后对光电导THz源的辐射原理进行了深入研究,探讨了影响光电导太赫兹源辐射的三个主要因素:光导体、天线几何结构和泵浦激光脉冲宽度。目前在光电导太赫兹源研究中存在的主要问题是辐射波的能量和频率都较低,提出了今后可从光导体、天线几何结构和其他方面提高光电导太赫兹源辐射的强度和频率。
在解释光整流效应的基础上,本论文讨论了国内外应用光整流作为太赫兹辐射源产生的太赫兹波的研究进展,研究了光整流THz源的辐射原理:非线性极化。目前在光整流太赫兹源研究中存在的主要问题是:在非线性晶体中实现相位匹配十分困难,所以辐射的太赫兹波强度较低,提出了提高光整流太赫兹源辐射强度的几种方法。
太赫兹波的传输和操控的研究是一些太赫兹技术能否广泛应用的关键。本文用CST微波工作室软件包模拟了石英、硅、Teflon和HDPE四种材料的太赫兹波导的传输特性,分析了这几种波导结构在太赫兹波段的S参数、端口处的传输场能量、端口处的电场和磁场、整个波导的三维法线分量电场分布和波导的三维切线分量电场分布等。结果表明,在传输的太赫兹波的频率不太高和波导的几何尺寸不太大时,这几种材料可以作为太赫兹波段的波导传输太赫兹波。
At present,photoconductive switches and optical rectification are the two important and widespread methods of terahertz radiation generation. THz waveguide propagation is also very important in the development of THz technology. This paper studied radiation principle, the influence factors and the improvement methods of the photoconductivity and optical rectification THz radiation sources .The transmission characteristics of several materials terahertz waveguide had also been simulated.
In the research of photoconductive THz sources ,at first,the development process of the photoconductive switch was introduced and then the level of THz wave generated by photoconductive switches at home and abroad were discussed. The principle of photoconductive THz sources was studied in-depth. The three primary factors: photoconductor, antenna geometry structure and the width of pump laser pulse which impact the radiation of photoconductive THz sources were explored. At present the main question which exists in the research of photoconductive THz sources is that the wave energy and frequency are low. And the radiation intensity and frequency can be improved from the aspects such as photoconductor, the antenna geometry structure and other areas.
On the basis of explaining optical rectification effect , the level of THz wave generated by optical rectification at home and abroad were discussed in this paper. The radiation principle: non-linear polarization had been studied thoroughly. At present the main question which exists in the research of optical rectification THz source is that it is very difficult to achieve phase matching in the nonlinear crystal. Therefore, the radiation intensity is too low. Several methods to enhance the intensity of optical rectification THz radiation sources were proposed.
How to transmit and manipulate THz wave are the key of some widespread applications of THz technology. CST Microwave Studio software package was used to simulate Si O_2、Si、Teflon and HDPE THz waveguide's transmission property. These types of waveguide structures' S parameter, energy transfer, port department of electric and magnetic fields,three-dimensional waveguide normal and tangential component of electric field distribution were analysed. The results indicated that these materials can be used as the terahertz waveguide when the transmission frequency is not too high and the waveguide geometric size is not too large.
引文
[1]刘盛纲.太赫兹科学技术的新发展[J].中国基础科学·科学前沿,2006,(1):7-12
[2]许景周,张希成.太赫兹科学技术和应用[M].北京大学出版社,2007.7
[3]M.Nagel,P.H.Bolivar,M.Brucherseifer,et al.Integrated THz technology for label-free genetic diagnostics.Appl.Phys.Lett.,2002,80:154-156
[4]J.Y.Lu,L.J.Chen,T.E.Kao,H.H.Chang,et al.Terahertz microchip for illicit drug detection.IEEE Photonics Technology Letters,2006,18(21):2254-2256
[5]Dekorsy T,Auer H,Waschke C,et al.Emission of Submillimeter Electromagnetic Waves by Coherent Phonons.Phys.Rev.Lett,1995,75:738-741
[6]何晓勇.太赫兹量子级联激光器电子输运及波导研究[D].中科院研究生院学位论文,2007
[7]王少宏,许景周,汪力等.THz技术的应用及展望[J].物理,2001,30(10):612-615
[8]曹俊诚.太赫兹量子级联激光器研究进展[J].物理,2006,35(8):632-636
[9]石泾波.InGaAs/AlAsSb中红外量子级联激光器.吉林大学硕士学位论文,2007
[10]R.Gordon,A.G.Brolo,A.Mckinnon et al.String Polarization in the Optical Transmission through Elliptical Nanohole Arrays[J],Phys.Rev.Lett.2004,92,037401
[11]A.Degiron,H.J.Lezec,W.L.Barnes,et al.Effects of hole depth on enhananced light transmission through subwavelength hole arrays[J],Appl.Phys.Lett.2002,81,4327
[12]姚建铨,路洋,张百钢等.THz辐射的研究和应用新进展[J].光电子·激光,2005,16(4):503-510
[13]吕京涛.太赫兹量子级联激光器及其它半导体辐射源研究[D].中国科学院研究生院博士学位论文,中国科学院上海微系统与信息技术研究所,2006
[14]N.G.Gavrilov,B.A.Knyazev,E.I.Kolobanov et al.Status of the Novosibirsk High-Power Terahertz FEL.Nuclear Instruments and Methods in Physics Research Section A:Accelerators.Spectrometers.Detectors and Associated Equipment.2007,575(1-2):54-57
[15]S.Krishnagopal,V.Kumar.Free-Electron Lasers[J].Radiation Physics and Chemistry.2004,70(4-5):559-569
[16]G.R.Neil,C.Behre,S.V.Bensonetal.The Lab High Power ERL light source.Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment.2006,557(1):9-15
[17]张彬铮.太赫兹切连科夫辐射的基础理论研究[D].浙江大学硕士学位论文,2007
[18]X.-C.Zhang,Y.Jin,L.E.Kingsley,et al.Influence of electric and magnetic field on THz raduation[J].Appl.Phys.Lett.1993,62(20),2477
[19]Walther M,Jevsky K,Keidig S R,Takahiro H and Ito H,Opt.Lett.,25,11,2000
[20]B.B.Hu,X.-C.Zhang and D.H.Auston,et al.,Free-space radiation from electro-optic crystals[J].Appl.Phys.Lett.1990,56(6),506-508
[21]Q.Wu,X-C.Zhang.Ultrafast electro-optie field sensors[J].Appl.Phys.Lett.,1996,68(12):1604-1606
[22]张兴宁.太赫兹应用技术研究[D).浙江大学硕士学位论文,2005
[23]R.W.Ziolkowski and J.B.Judkins.Propagation characteristics of ultrawide-bandwidth pulsed Guassian bemas[J].J.OPt.Soc.hm.1992,A9(11),2021-2030.
[24]L.Wu,X.C.Zhang and D.H.Auston.Terahertz beam generation by femtosecond optical pulses in electro-optic materials[J]. Appl. Phys. Lett. 1992, 61:1784-1786
[25] P.Y.Han and X.C. Zhang,Measurement Science and Technology, 200112,1747-1756,
[26] K. L. Wang, D.M. Mittleman. Metal wires fir terahertz wave guiding[J]. Nature, 2004, 432:376-379
[27] ChoiMK.TaylorK, BettennannA, etal. , Phys. Med. Biol. , 47, 3777, 2002
[28] Y.C.Shen , T. Lo , P. F. Taday , et al. Detection and identification of explosives using terahertz pulsed spectroscopic imaging[J]Appl. Phys. Lett. , 2005, 86:241116
[29] Woodward R M,Cole B E,Wallace V P, et al., Phys. Med. Biol., 47, 3853, 2002
[30] C. Zandonell. Terahertz imaging:T-raysPees. Nature , 2003 , 424(6950):721-722
[31] Naney D.Rowel1, Biophotonics International, 21., March. 2002
[32] J.T.Kindt and C. A. Sehmuttenmaer. Far-infrared dielectric Properties of polar liquids probed by femtosecond THz pulse spectroscopy [J]. J.Phys. Chem. , 1996, 100:10373 - 10379
[33] J. W. Handley , A. J. Fitzgerald ,E Berry, et al. LDigital Signal2 Processing ,2004 ,14 :99-111
[34] Dragomana , M. Dragomanb. Progtess in Quantum Electronics ,2004 ,28 :1-66
[35] R. A. Cheville and D. Grisehkowsky. Time domain terahertz impulse ranging studies[J]. Appl. Phys. Lett. 1995, 67:1960-1962
[36] S. Jayaraman and C. H. Lee. Observation of two Photon conduetivity in GaAs with nanoseeond and Picosecond light Pulse [JL Appl. Phys. Lett. , 1972, 20:392 - 395.
[37] D.H. Auston. Picosecond optoelectronic switehing and gating insilieon[J]. Appl. Phys. Lett. , 1975, 6(3):101 - 103
[38] C. H. Lee. Picosecond optoelectronic switehing in GaAs[J]. Appl.Phys.Lett.,1977,30(2):84-86.
[39]CHI.H.LEE.Optieal Control of Semiconduetor Closing and Opening Switehes[J].IEEE Trans.on Electron Devices,1990,37(12):2426-2438
[40]G.M.Loubriel,M.W.O'Mall,F.J.Zutavem.Towards pulsed power uses for photoconductive Semiconductor switehes[C].Culsing switehes,6~(th) IEEE Pulsed power Conf.,1987,pp145-145
[41]M.Sukhotin,E.R.Brown,A.C.Gossard,et al.Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55μm[J].Appl Phys Lett,2003,82(18):3116-3118
[42]N.Chimot,J.Mangeney,L.Joulaud,et al.Terahertz radiation from heavy-ion-irradiated In_(0.53)Ga_(0.47)As photoconductive antenna excited at 1.55 μm[J].Appl Phys Lett,2005,87:193510
[43]A.Takazato,M.Kamakura,T.Matsui,et al.Terahertz wave emission and detection using photoconductive antennas made on low-temperature-grown InGaAs with 1.56 μm pulse excitation[J].Appl Phys Lett,2007,91:011102
[44]Nan M.Froberg,Bin Bin Hu,Xi-Cheng Zhang,et al.Terahertz Radiation from a Photoconducting Antenna Array[J].IEEE JOURNAL OF QUANTUM ELECTRONICS,1992,28(10):2291-2301
[45]施卫,张显斌,贾婉丽等.用飞秒激光触发GaAs光电导体产生THz电磁波的研究[J].半导体学报,2004,25(12):1735-1738
[46]Wei Shi,Jingzhou Xu and X.-C.Zhang.Terhertz generation from Si_3N_4 covered photoconductive dipole antenna[J],CHINESE OPTICS LETTERS,2003,1(5):308-310
[47]阮驰,赵卫,陈国夫等.GaAs与InP半导体光导开关特性实验研究[J].光子学报,2007,36(3):405-411
[48]C.H.Lee.Picossecond photoconductivity and its applications[J].IEEE Trans.J.Quantum Electronics,1981,17:2098-2107
[49]程兆华,祝大军,刘盛纲.太赫兹技术的研究进展[J].现代物理知识,2004,17(5):40-44
[50]A.Leitenstorfer,S.Hunsche,J.Shah,et al.Detectorsand sources for ultrabroadband electro-optic sampling:Experiment and theory[J].Appl.Phys.Lett.1999,74(11):1516-1518.
[51]Williamson S.,Albrecht G.F.,Mourou G.Laser triggered Cr:GaAs HV sparkgap with high trigger sensitivity[J].Rev.Seientific Instrumentation.1982,53(6):867-870.
[52]G.M.Loubriel,F.J.Zutavern,H.P.Hialmarson.et al.Measurment of the veloeity of current filmaent in optieally triggered,high gain GaAs switehes[J].Appl.Phys.Lett,1994,64(24):3323-3325
[53]G.M.Loubriel,M.W.O' Malley and F.J.Zutavern.Toward Pulsed Power Uses for Photoconduetive Semiconduetor Switehes[C],Proc.of 6~(th) IEEE Pulsed Power Conf.,Arlington,VA,1987,145-148
[54]于海霞.GaAs∶Si∶Cu光控半导体开关基体材料特性的研究[D].河北工业大学硕士研究生学位论文,2000
[55]Peterkin F.E,Schoenbach K H,Dougal R,et al.Developments toward laser diode driven bistable photoconductive switehes(BOSS)[C].IEEE 10~(th) Pulsed Power Conf.,1995,366-371
[56]Falk R.A.,Adams J.C.,Capps C.D.,et al.Optical probe techniques for avalanching photoconductors[C].Proc.8~(th) IEEE Pulsed Power Conf,R.White K.R,Prestwich,eds.,San Diego,CA,1991,29-32.
[57]Adams J.C.,Falk R.A.,CaPPs C.D.,et al.Characterization of current filamention in GaAs photoconductive switches[C].SPIE Vol.1873 Optically Activated Switching Ⅲ,Los Angeles,CA.1993,10-20.
[58]赵尚弘,陈国夫,赵卫,等.THz射线产生技术及应用最新进展[J].激光技术,2000,24(6):351-356
[59]刘恩科,朱秉生,罗晋生.半导体物理学[M].国防工业出版社,1994
[60]马成举,陈延伟,向军,等.太赫兹辐射产生技术进展[J].激光与光电子学进展,2007,44(4):56-61
[61]陈二柱.砷化嫁光电导开关瞬态特性研究[D].西安理工大学学位论文,2002
[62]王秀敏,徐新龙,李福利.THz技术进展[J].首都师范大学学报(自然科学版),2003,24(3):17-25
[63]Peterkin F.E.,Ridolfi T.,Buresh L.L.,et al.Surface flashover of silieon[J].IEEE Trans.On electron Devices,1990,37(12):2459-2465
[64]Gradinaru G.,Sudarshan T.S.Prebreakdown and breakdown Phenomena in high-field semiconductor-dielectric systems[J].J.Appl.Phys.,1993,73(11):7643-7666
[65]施卫,张显斌,贾婉丽等.用飞秒激光触发GaAs光电导体产生THz 电磁波的研究[J].半导体学报,2004,25(12):1735-1738
[66]侯磊.高功率THz光电导天线的设计[D].西安理工大学学位论文,2005
[67]G.M.Loubriel,F.J.Zutavern,H.P.Hjalmavson.et al.Closing photoconductive semiconductor switches[C].In:Proc 7~(th) IEEE Pulsed Power Conf.Monterey,CA,1989:365-367
[68]施卫,田立强.半绝缘GaAs光电导开关的击穿特性[J].半导体学报,2004,25(6):691-696
[69]常青.大孔径光导天线产生太赫兹波的理论研究[D].浙江大学硕士学位论文,2006
[70]贾婉丽,纪卫莉,施卫.半绝缘GaAs光电导开关产生太赫兹波电场屏蔽效应的二维Monte Carlo模拟[J].物理学报,2007,56(4):2042-2046
[71]Di LI,Yi HUANG.A Theory of How to Improve the Radiation of the Photoconductive Antenna[C].IEEE Conference Proceeding,2007:499-502
[72]孙金海,赵国忠,张亮亮等.外加电场和磁场对太赫兹辐射产生的影响[J].中国激光,2005,32(2):192-195
[73]M.Bass,P.A.Franken,J.F.Ward.et al.Optical Rectification[J].Phys Revi Lett.1962,9(11):446-448,
[74]K.H.Yang,P.L.Richards and Y.R.Shen.cw CO Laser from the CS_2-O_2Flame[J].Appl Phys Lett 1971,19(9):320-323.
[75]A.Bonvalet,M.Joffre,J.L.Martin,et al.Generation of ultrabroadband femtosecond pulses in the mid-infrared by optical rectification of 15 fs light pulses at 100 MHz repetition rate[J].Appl.Phys.Lett.,1995,67(20):2907-2909
[76]A.Leitenstorfer,S.Hunsche,J.Shah,et al.Detectors and sources for ultrabroadband electro-optic sampling:Experiment and theory[J].Appl.Phys.Lett.,1999,74(11):1516-1518
[77]R.Huber,A.Brodschelm,F.Tauser,et al.Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz[J].Appl.Phys.Lett,2000,76(22):3191-3193
[78]K.-L.Yeh,M.C.Hoffmann,J.Hebling,et al.Generation of 10 μJ ultrashort terahertz pulses by optical rectification[J].Appl.Phys.Lett.,2007,90:171121
[79]R.Huber,F.Tauser,A.Brodschelm,et al,How many particle interactoins develop after ultrafast excitation of an electorn-hole Plasma[J],naurte,2001,414:286
[80]孙博,姚建铨.基于光学方法的太赫兹辐射源[J].中国激光,2006,33(10):1349-1359
[81]张希成,金亚红.光致电磁辐射原理及应用[J].物理,1993,22(3):136-140
[82]S.L.Chuang,S.Schmitt-Rink,B I Greene.Optical rectification at semiconductor surfaces[J].Phys.Revi.Lett,1992.68(1):102-105.
[83]张开春,吴振华,刘盛纲.周期极化非线性晶体中太赫兹波辐射研究[J].强激光与粒子束,2007,19(5):799-802
[84]R.W.McGowan,G.Gallot,D.Grischowsky.Propagation of ultrawideband short pulses of terahertz radiation through submillimeter-diameter circular waveguide[J].Opt.Lett.,1999,24(20):1431-1433
[85]K.L.Wang,D.M.Mittleman.Guided propagation of terahertz pulses on metal wires[J].J.Opt.Soc.Am.B.2005,22(9):2001-2008
[86]A.Bingham.Y.G.Zhao,D.Grischkowsky.THz parallel plate photonic waveguide[J].Appl.Phys.Lett.,2005,87:051101
[87]R.Pobre,A.Quemal,E.Estacio,et al.Modal analysis of teflon photonic crystal fiber as a terahertz waveguide[R].Novel Devices and Components,IEEE,2005,MC5-4:103-104
[88]Takehiko Hidaka,Hiroaki Minamide,Hiromasa Ito.et al.Ferroelectric PVDF cladding THz waveguide[J].Proc,of SPIE,2003,5135:70-77
[89]R.Mendis,D.Grischkowsky.Plastic ribbon THz waveguide[J].J.Appl.Phys.,2000,88(7):4449-4451
[90]S.P.Jamison,R.W.McGowan,D.Grischlowsky.Single-mode waveguide propagation and reshaping of sub-ps terahertz pulses in sapphire fibers[J].Appl.Phys.Lett.,2000,76(15):1987-1989
[91]李志平,赵东末,苗俊刚.微波辐射计接收机的逆向辐射噪声对天线定标的影响仿真[J].遥感技术与应用,2007,22(2):268-271
[92]张峰,杜晓燕,周东方等.CST软件在LPDA设计中的应用[J].计算机应用与软件,2007,24(11):16-17
[93]费兴美.利用CST微波工作室软件改进行波管的性能[J],真空电子技术,2006,3:28-30
[94]Michael Ngel,Astid Marchewka and Heinrich Kurz.Low-Index Discontinuity THz Waveguides[C].Proc.14~(th) IEEE Terahertz Electronics Conf,2006,569.
[2]许景周,张希成.太赫兹科学技术和应用[M].北京大学出版社,2007.7
[3]M.Nagel,P.H.Bolivar,M.Brucherseifer,et al.Integrated THz technology for label-free genetic diagnostics.Appl.Phys.Lett.,2002,80:154-156
[4]J.Y.Lu,L.J.Chen,T.E.Kao,H.H.Chang,et al.Terahertz microchip for illicit drug detection.IEEE Photonics Technology Letters,2006,18(21):2254-2256
[5]Dekorsy T,Auer H,Waschke C,et al.Emission of Submillimeter Electromagnetic Waves by Coherent Phonons.Phys.Rev.Lett,1995,75:738-741
[6]何晓勇.太赫兹量子级联激光器电子输运及波导研究[D].中科院研究生院学位论文,2007
[7]王少宏,许景周,汪力等.THz技术的应用及展望[J].物理,2001,30(10):612-615
[8]曹俊诚.太赫兹量子级联激光器研究进展[J].物理,2006,35(8):632-636
[9]石泾波.InGaAs/AlAsSb中红外量子级联激光器.吉林大学硕士学位论文,2007
[10]R.Gordon,A.G.Brolo,A.Mckinnon et al.String Polarization in the Optical Transmission through Elliptical Nanohole Arrays[J],Phys.Rev.Lett.2004,92,037401
[11]A.Degiron,H.J.Lezec,W.L.Barnes,et al.Effects of hole depth on enhananced light transmission through subwavelength hole arrays[J],Appl.Phys.Lett.2002,81,4327
[12]姚建铨,路洋,张百钢等.THz辐射的研究和应用新进展[J].光电子·激光,2005,16(4):503-510
[13]吕京涛.太赫兹量子级联激光器及其它半导体辐射源研究[D].中国科学院研究生院博士学位论文,中国科学院上海微系统与信息技术研究所,2006
[14]N.G.Gavrilov,B.A.Knyazev,E.I.Kolobanov et al.Status of the Novosibirsk High-Power Terahertz FEL.Nuclear Instruments and Methods in Physics Research Section A:Accelerators.Spectrometers.Detectors and Associated Equipment.2007,575(1-2):54-57
[15]S.Krishnagopal,V.Kumar.Free-Electron Lasers[J].Radiation Physics and Chemistry.2004,70(4-5):559-569
[16]G.R.Neil,C.Behre,S.V.Bensonetal.The Lab High Power ERL light source.Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment.2006,557(1):9-15
[17]张彬铮.太赫兹切连科夫辐射的基础理论研究[D].浙江大学硕士学位论文,2007
[18]X.-C.Zhang,Y.Jin,L.E.Kingsley,et al.Influence of electric and magnetic field on THz raduation[J].Appl.Phys.Lett.1993,62(20),2477
[19]Walther M,Jevsky K,Keidig S R,Takahiro H and Ito H,Opt.Lett.,25,11,2000
[20]B.B.Hu,X.-C.Zhang and D.H.Auston,et al.,Free-space radiation from electro-optic crystals[J].Appl.Phys.Lett.1990,56(6),506-508
[21]Q.Wu,X-C.Zhang.Ultrafast electro-optie field sensors[J].Appl.Phys.Lett.,1996,68(12):1604-1606
[22]张兴宁.太赫兹应用技术研究[D).浙江大学硕士学位论文,2005
[23]R.W.Ziolkowski and J.B.Judkins.Propagation characteristics of ultrawide-bandwidth pulsed Guassian bemas[J].J.OPt.Soc.hm.1992,A9(11),2021-2030.
[24]L.Wu,X.C.Zhang and D.H.Auston.Terahertz beam generation by femtosecond optical pulses in electro-optic materials[J]. Appl. Phys. Lett. 1992, 61:1784-1786
[25] P.Y.Han and X.C. Zhang,Measurement Science and Technology, 200112,1747-1756,
[26] K. L. Wang, D.M. Mittleman. Metal wires fir terahertz wave guiding[J]. Nature, 2004, 432:376-379
[27] ChoiMK.TaylorK, BettennannA, etal. , Phys. Med. Biol. , 47, 3777, 2002
[28] Y.C.Shen , T. Lo , P. F. Taday , et al. Detection and identification of explosives using terahertz pulsed spectroscopic imaging[J]Appl. Phys. Lett. , 2005, 86:241116
[29] Woodward R M,Cole B E,Wallace V P, et al., Phys. Med. Biol., 47, 3853, 2002
[30] C. Zandonell. Terahertz imaging:T-raysPees. Nature , 2003 , 424(6950):721-722
[31] Naney D.Rowel1, Biophotonics International, 21., March. 2002
[32] J.T.Kindt and C. A. Sehmuttenmaer. Far-infrared dielectric Properties of polar liquids probed by femtosecond THz pulse spectroscopy [J]. J.Phys. Chem. , 1996, 100:10373 - 10379
[33] J. W. Handley , A. J. Fitzgerald ,E Berry, et al. LDigital Signal2 Processing ,2004 ,14 :99-111
[34] Dragomana , M. Dragomanb. Progtess in Quantum Electronics ,2004 ,28 :1-66
[35] R. A. Cheville and D. Grisehkowsky. Time domain terahertz impulse ranging studies[J]. Appl. Phys. Lett. 1995, 67:1960-1962
[36] S. Jayaraman and C. H. Lee. Observation of two Photon conduetivity in GaAs with nanoseeond and Picosecond light Pulse [JL Appl. Phys. Lett. , 1972, 20:392 - 395.
[37] D.H. Auston. Picosecond optoelectronic switehing and gating insilieon[J]. Appl. Phys. Lett. , 1975, 6(3):101 - 103
[38] C. H. Lee. Picosecond optoelectronic switehing in GaAs[J]. Appl.Phys.Lett.,1977,30(2):84-86.
[39]CHI.H.LEE.Optieal Control of Semiconduetor Closing and Opening Switehes[J].IEEE Trans.on Electron Devices,1990,37(12):2426-2438
[40]G.M.Loubriel,M.W.O'Mall,F.J.Zutavem.Towards pulsed power uses for photoconductive Semiconductor switehes[C].Culsing switehes,6~(th) IEEE Pulsed power Conf.,1987,pp145-145
[41]M.Sukhotin,E.R.Brown,A.C.Gossard,et al.Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55μm[J].Appl Phys Lett,2003,82(18):3116-3118
[42]N.Chimot,J.Mangeney,L.Joulaud,et al.Terahertz radiation from heavy-ion-irradiated In_(0.53)Ga_(0.47)As photoconductive antenna excited at 1.55 μm[J].Appl Phys Lett,2005,87:193510
[43]A.Takazato,M.Kamakura,T.Matsui,et al.Terahertz wave emission and detection using photoconductive antennas made on low-temperature-grown InGaAs with 1.56 μm pulse excitation[J].Appl Phys Lett,2007,91:011102
[44]Nan M.Froberg,Bin Bin Hu,Xi-Cheng Zhang,et al.Terahertz Radiation from a Photoconducting Antenna Array[J].IEEE JOURNAL OF QUANTUM ELECTRONICS,1992,28(10):2291-2301
[45]施卫,张显斌,贾婉丽等.用飞秒激光触发GaAs光电导体产生THz电磁波的研究[J].半导体学报,2004,25(12):1735-1738
[46]Wei Shi,Jingzhou Xu and X.-C.Zhang.Terhertz generation from Si_3N_4 covered photoconductive dipole antenna[J],CHINESE OPTICS LETTERS,2003,1(5):308-310
[47]阮驰,赵卫,陈国夫等.GaAs与InP半导体光导开关特性实验研究[J].光子学报,2007,36(3):405-411
[48]C.H.Lee.Picossecond photoconductivity and its applications[J].IEEE Trans.J.Quantum Electronics,1981,17:2098-2107
[49]程兆华,祝大军,刘盛纲.太赫兹技术的研究进展[J].现代物理知识,2004,17(5):40-44
[50]A.Leitenstorfer,S.Hunsche,J.Shah,et al.Detectorsand sources for ultrabroadband electro-optic sampling:Experiment and theory[J].Appl.Phys.Lett.1999,74(11):1516-1518.
[51]Williamson S.,Albrecht G.F.,Mourou G.Laser triggered Cr:GaAs HV sparkgap with high trigger sensitivity[J].Rev.Seientific Instrumentation.1982,53(6):867-870.
[52]G.M.Loubriel,F.J.Zutavern,H.P.Hialmarson.et al.Measurment of the veloeity of current filmaent in optieally triggered,high gain GaAs switehes[J].Appl.Phys.Lett,1994,64(24):3323-3325
[53]G.M.Loubriel,M.W.O' Malley and F.J.Zutavern.Toward Pulsed Power Uses for Photoconduetive Semiconduetor Switehes[C],Proc.of 6~(th) IEEE Pulsed Power Conf.,Arlington,VA,1987,145-148
[54]于海霞.GaAs∶Si∶Cu光控半导体开关基体材料特性的研究[D].河北工业大学硕士研究生学位论文,2000
[55]Peterkin F.E,Schoenbach K H,Dougal R,et al.Developments toward laser diode driven bistable photoconductive switehes(BOSS)[C].IEEE 10~(th) Pulsed Power Conf.,1995,366-371
[56]Falk R.A.,Adams J.C.,Capps C.D.,et al.Optical probe techniques for avalanching photoconductors[C].Proc.8~(th) IEEE Pulsed Power Conf,R.White K.R,Prestwich,eds.,San Diego,CA,1991,29-32.
[57]Adams J.C.,Falk R.A.,CaPPs C.D.,et al.Characterization of current filamention in GaAs photoconductive switches[C].SPIE Vol.1873 Optically Activated Switching Ⅲ,Los Angeles,CA.1993,10-20.
[58]赵尚弘,陈国夫,赵卫,等.THz射线产生技术及应用最新进展[J].激光技术,2000,24(6):351-356
[59]刘恩科,朱秉生,罗晋生.半导体物理学[M].国防工业出版社,1994
[60]马成举,陈延伟,向军,等.太赫兹辐射产生技术进展[J].激光与光电子学进展,2007,44(4):56-61
[61]陈二柱.砷化嫁光电导开关瞬态特性研究[D].西安理工大学学位论文,2002
[62]王秀敏,徐新龙,李福利.THz技术进展[J].首都师范大学学报(自然科学版),2003,24(3):17-25
[63]Peterkin F.E.,Ridolfi T.,Buresh L.L.,et al.Surface flashover of silieon[J].IEEE Trans.On electron Devices,1990,37(12):2459-2465
[64]Gradinaru G.,Sudarshan T.S.Prebreakdown and breakdown Phenomena in high-field semiconductor-dielectric systems[J].J.Appl.Phys.,1993,73(11):7643-7666
[65]施卫,张显斌,贾婉丽等.用飞秒激光触发GaAs光电导体产生THz 电磁波的研究[J].半导体学报,2004,25(12):1735-1738
[66]侯磊.高功率THz光电导天线的设计[D].西安理工大学学位论文,2005
[67]G.M.Loubriel,F.J.Zutavern,H.P.Hjalmavson.et al.Closing photoconductive semiconductor switches[C].In:Proc 7~(th) IEEE Pulsed Power Conf.Monterey,CA,1989:365-367
[68]施卫,田立强.半绝缘GaAs光电导开关的击穿特性[J].半导体学报,2004,25(6):691-696
[69]常青.大孔径光导天线产生太赫兹波的理论研究[D].浙江大学硕士学位论文,2006
[70]贾婉丽,纪卫莉,施卫.半绝缘GaAs光电导开关产生太赫兹波电场屏蔽效应的二维Monte Carlo模拟[J].物理学报,2007,56(4):2042-2046
[71]Di LI,Yi HUANG.A Theory of How to Improve the Radiation of the Photoconductive Antenna[C].IEEE Conference Proceeding,2007:499-502
[72]孙金海,赵国忠,张亮亮等.外加电场和磁场对太赫兹辐射产生的影响[J].中国激光,2005,32(2):192-195
[73]M.Bass,P.A.Franken,J.F.Ward.et al.Optical Rectification[J].Phys Revi Lett.1962,9(11):446-448,
[74]K.H.Yang,P.L.Richards and Y.R.Shen.cw CO Laser from the CS_2-O_2Flame[J].Appl Phys Lett 1971,19(9):320-323.
[75]A.Bonvalet,M.Joffre,J.L.Martin,et al.Generation of ultrabroadband femtosecond pulses in the mid-infrared by optical rectification of 15 fs light pulses at 100 MHz repetition rate[J].Appl.Phys.Lett.,1995,67(20):2907-2909
[76]A.Leitenstorfer,S.Hunsche,J.Shah,et al.Detectors and sources for ultrabroadband electro-optic sampling:Experiment and theory[J].Appl.Phys.Lett.,1999,74(11):1516-1518
[77]R.Huber,A.Brodschelm,F.Tauser,et al.Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz[J].Appl.Phys.Lett,2000,76(22):3191-3193
[78]K.-L.Yeh,M.C.Hoffmann,J.Hebling,et al.Generation of 10 μJ ultrashort terahertz pulses by optical rectification[J].Appl.Phys.Lett.,2007,90:171121
[79]R.Huber,F.Tauser,A.Brodschelm,et al,How many particle interactoins develop after ultrafast excitation of an electorn-hole Plasma[J],naurte,2001,414:286
[80]孙博,姚建铨.基于光学方法的太赫兹辐射源[J].中国激光,2006,33(10):1349-1359
[81]张希成,金亚红.光致电磁辐射原理及应用[J].物理,1993,22(3):136-140
[82]S.L.Chuang,S.Schmitt-Rink,B I Greene.Optical rectification at semiconductor surfaces[J].Phys.Revi.Lett,1992.68(1):102-105.
[83]张开春,吴振华,刘盛纲.周期极化非线性晶体中太赫兹波辐射研究[J].强激光与粒子束,2007,19(5):799-802
[84]R.W.McGowan,G.Gallot,D.Grischowsky.Propagation of ultrawideband short pulses of terahertz radiation through submillimeter-diameter circular waveguide[J].Opt.Lett.,1999,24(20):1431-1433
[85]K.L.Wang,D.M.Mittleman.Guided propagation of terahertz pulses on metal wires[J].J.Opt.Soc.Am.B.2005,22(9):2001-2008
[86]A.Bingham.Y.G.Zhao,D.Grischkowsky.THz parallel plate photonic waveguide[J].Appl.Phys.Lett.,2005,87:051101
[87]R.Pobre,A.Quemal,E.Estacio,et al.Modal analysis of teflon photonic crystal fiber as a terahertz waveguide[R].Novel Devices and Components,IEEE,2005,MC5-4:103-104
[88]Takehiko Hidaka,Hiroaki Minamide,Hiromasa Ito.et al.Ferroelectric PVDF cladding THz waveguide[J].Proc,of SPIE,2003,5135:70-77
[89]R.Mendis,D.Grischkowsky.Plastic ribbon THz waveguide[J].J.Appl.Phys.,2000,88(7):4449-4451
[90]S.P.Jamison,R.W.McGowan,D.Grischlowsky.Single-mode waveguide propagation and reshaping of sub-ps terahertz pulses in sapphire fibers[J].Appl.Phys.Lett.,2000,76(15):1987-1989
[91]李志平,赵东末,苗俊刚.微波辐射计接收机的逆向辐射噪声对天线定标的影响仿真[J].遥感技术与应用,2007,22(2):268-271
[92]张峰,杜晓燕,周东方等.CST软件在LPDA设计中的应用[J].计算机应用与软件,2007,24(11):16-17
[93]费兴美.利用CST微波工作室软件改进行波管的性能[J],真空电子技术,2006,3:28-30
[94]Michael Ngel,Astid Marchewka and Heinrich Kurz.Low-Index Discontinuity THz Waveguides[C].Proc.14~(th) IEEE Terahertz Electronics Conf,2006,569.