Mn、Co掺杂SiC稀磁半导体薄膜的制备及物性研究
摘要
信息时代的到来,对信息的处理、传输和存储的一体化提出了更高的要求,人们期望得到稀磁半导体为代表的自旋电子器件以满足要求。SiC稀磁半导体既具有优良的半导体性能又有磁性,是潜在自旋电子器件的优良材料,受到了人们广泛的关注。
采用射频磁控溅射共溅射法,制备Mn、Co掺杂的SiC稀磁半导体薄膜。薄膜在4×10~(-4)Pa条件下进行1200℃、800℃,1h的退火处理。薄膜厚度约400nm。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)和X射线吸收精细结构技术(XAFS)对薄膜进行表征,通过多功能物理测试系统(PPMS)和荧光光谱仪对薄膜的磁性和光致发光特性进行测试,通过R-T、I-V曲线对薄膜的半导体输运特性进行研究。结果如下:
1、Mn、Co掺杂SiC薄膜在2θ=35.8o处存在衍射峰,这个衍射峰位为3C-SiC的第一强峰,说明薄膜的晶体结构为3C-SiC。Mn、Co的掺杂使SiC晶格发生畸变,SiC衍射峰半高宽增大。随着掺杂浓度的升高,衍射峰从高角度向低角度移动。经过1200℃退火的薄膜,出现了Mn4Si7、CoSi第二相化合物。
2、经XPS,XAFS表征,对于制备态的SiC薄膜和退火后的SiC薄膜,Mn、Co均以离子态掺入薄膜中,且均为+2价。经分析,Mn、Co是以替位形式掺入SiC晶格。退火后的Mn、Co掺杂SiC薄膜Si 2p的XPS图谱中也发现了Mn-Si键和Co-Si键,与XRD表征出薄膜中存在第二相的结果相一致,进一步印证了Mn_4Si_7、CoSi第二相化合物的存在。
3、Mn、Co掺杂SiC薄膜的I-V曲线为线性关系,Mn、Co的掺杂没有形成金属—绝缘颗粒薄膜,证明薄膜中不存在金属团簇,形成的是非均匀体系的薄膜。R-T曲线测试表明,Mn、Co掺杂后,SiC薄膜的电阻率随温度的升高而降低,证明SiC薄膜仍具有半导体属性。
4、磁性测量表明,Mn、Co掺杂SiC薄膜都具有室温铁磁性。在制备态的Mn掺杂SiC薄膜中,随着Mn掺杂量增加,饱和磁化强度有明显增加,当掺杂量达到9at%时,薄膜的饱和磁化强度接近15emu/cm~3,随着退火温度升高,薄膜的饱和磁化强度也随之升高。在Co掺杂的薄膜中,随着掺杂量升高,薄膜的饱和磁化强度从1.9emu/cm~3升到6.5 emu/cm~3,当掺杂量达到10at%后,薄膜的饱和磁化强度又降到2emu/cm~3。在不同退火温度薄膜的比较中发现,800℃退火的Co掺杂SiC薄膜饱和磁化强度最强,达12emu/cm~3。
With the coming of information age,the higher demands for information processing and transmission and storage of integration are more and more increased.The Diluted Magnetic Semiconductor on behalf of the spin electronic appliance has been expected. SiC based DMS,with its excellent performance of semiconductor and property of magnetic material concerned by more people.
SiC films doped with Manganese(Mn) and Cobalt(Co) were prepared by the RF-magnetron sputtering. The prepared films were annealed in a vacuum environment at 1200℃and 800℃.The annealing treatment time was 40 minutes. The Mn and Co-doped films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine stucture (XFAS). The magnetic property and photoluminescence were texted by physical testing systems(PPMS)and UV - visible light photometer.The transport property of the DMS film was studied by R-T and I-V Curves. The results show that:
1. There exist a diffraction peak at 2θ=38.319°in the Mn and Co-doped SiC films.The diffraction peak is the strongest diffraction peak of 3C-SiC.So the structure is 3C-SiC lattice structure,the SiC lattice was distortioned by Mn and Co-doping.With the increasing of doping concentration,the diffraction peak moved from high to low angle.After annealing, the second phase Mn_4Si_7 and CoSi formed.
2. By XPS and XAFS measurements, it can be found that the Mn and Co atoms were all doped into SiC lattice for the as-deposited and annealed SiC films, they were all two price. Co and Mn atoms were substituted enter the SiC lattice.The Mn-Si and Co-Si key were found in the annealed films.
3. The I-V curve shows linear relationship,there were no metal cluster in the films.The metal-insulation films were not formed in Mn and Co-doped films.It shows that the films were un-homogeneous body system.With the temperature increased ,the R-T curve resistivity contours reduced.The semiconducting properties is obvious.
4. The magnetic property test shows that Mn and Co-doped films have room temperature ferromagnetic.The saturation magnetization increased with the increasing of Mn content.The saturation magnetization was 15emu/cm~3,When the Mn content was 9at%. With the annealing temperature increasing, the saturation magnetization of the film increased. The saturation magnetization increasing with the increasing Co content,from 1.9emu/cm~3 to 6.5 emu/cm~3 ,When the Mn content was 9at%,the saturation magnetization reduced to 2 emu/cm~3 .The 800℃annealing temperature benefitsed to the magnetization of the films.Its saturation magnetization is 12emu/cm~3.
采用射频磁控溅射共溅射法,制备Mn、Co掺杂的SiC稀磁半导体薄膜。薄膜在4×10~(-4)Pa条件下进行1200℃、800℃,1h的退火处理。薄膜厚度约400nm。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)和X射线吸收精细结构技术(XAFS)对薄膜进行表征,通过多功能物理测试系统(PPMS)和荧光光谱仪对薄膜的磁性和光致发光特性进行测试,通过R-T、I-V曲线对薄膜的半导体输运特性进行研究。结果如下:
1、Mn、Co掺杂SiC薄膜在2θ=35.8o处存在衍射峰,这个衍射峰位为3C-SiC的第一强峰,说明薄膜的晶体结构为3C-SiC。Mn、Co的掺杂使SiC晶格发生畸变,SiC衍射峰半高宽增大。随着掺杂浓度的升高,衍射峰从高角度向低角度移动。经过1200℃退火的薄膜,出现了Mn4Si7、CoSi第二相化合物。
2、经XPS,XAFS表征,对于制备态的SiC薄膜和退火后的SiC薄膜,Mn、Co均以离子态掺入薄膜中,且均为+2价。经分析,Mn、Co是以替位形式掺入SiC晶格。退火后的Mn、Co掺杂SiC薄膜Si 2p的XPS图谱中也发现了Mn-Si键和Co-Si键,与XRD表征出薄膜中存在第二相的结果相一致,进一步印证了Mn_4Si_7、CoSi第二相化合物的存在。
3、Mn、Co掺杂SiC薄膜的I-V曲线为线性关系,Mn、Co的掺杂没有形成金属—绝缘颗粒薄膜,证明薄膜中不存在金属团簇,形成的是非均匀体系的薄膜。R-T曲线测试表明,Mn、Co掺杂后,SiC薄膜的电阻率随温度的升高而降低,证明SiC薄膜仍具有半导体属性。
4、磁性测量表明,Mn、Co掺杂SiC薄膜都具有室温铁磁性。在制备态的Mn掺杂SiC薄膜中,随着Mn掺杂量增加,饱和磁化强度有明显增加,当掺杂量达到9at%时,薄膜的饱和磁化强度接近15emu/cm~3,随着退火温度升高,薄膜的饱和磁化强度也随之升高。在Co掺杂的薄膜中,随着掺杂量升高,薄膜的饱和磁化强度从1.9emu/cm~3升到6.5 emu/cm~3,当掺杂量达到10at%后,薄膜的饱和磁化强度又降到2emu/cm~3。在不同退火温度薄膜的比较中发现,800℃退火的Co掺杂SiC薄膜饱和磁化强度最强,达12emu/cm~3。
With the coming of information age,the higher demands for information processing and transmission and storage of integration are more and more increased.The Diluted Magnetic Semiconductor on behalf of the spin electronic appliance has been expected. SiC based DMS,with its excellent performance of semiconductor and property of magnetic material concerned by more people.
SiC films doped with Manganese(Mn) and Cobalt(Co) were prepared by the RF-magnetron sputtering. The prepared films were annealed in a vacuum environment at 1200℃and 800℃.The annealing treatment time was 40 minutes. The Mn and Co-doped films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine stucture (XFAS). The magnetic property and photoluminescence were texted by physical testing systems(PPMS)and UV - visible light photometer.The transport property of the DMS film was studied by R-T and I-V Curves. The results show that:
1. There exist a diffraction peak at 2θ=38.319°in the Mn and Co-doped SiC films.The diffraction peak is the strongest diffraction peak of 3C-SiC.So the structure is 3C-SiC lattice structure,the SiC lattice was distortioned by Mn and Co-doping.With the increasing of doping concentration,the diffraction peak moved from high to low angle.After annealing, the second phase Mn_4Si_7 and CoSi formed.
2. By XPS and XAFS measurements, it can be found that the Mn and Co atoms were all doped into SiC lattice for the as-deposited and annealed SiC films, they were all two price. Co and Mn atoms were substituted enter the SiC lattice.The Mn-Si and Co-Si key were found in the annealed films.
3. The I-V curve shows linear relationship,there were no metal cluster in the films.The metal-insulation films were not formed in Mn and Co-doped films.It shows that the films were un-homogeneous body system.With the temperature increased ,the R-T curve resistivity contours reduced.The semiconducting properties is obvious.
4. The magnetic property test shows that Mn and Co-doped films have room temperature ferromagnetic.The saturation magnetization increased with the increasing of Mn content.The saturation magnetization was 15emu/cm~3,When the Mn content was 9at%. With the annealing temperature increasing, the saturation magnetization of the film increased. The saturation magnetization increasing with the increasing Co content,from 1.9emu/cm~3 to 6.5 emu/cm~3 ,When the Mn content was 9at%,the saturation magnetization reduced to 2 emu/cm~3 .The 800℃annealing temperature benefitsed to the magnetization of the films.Its saturation magnetization is 12emu/cm~3.
引文
[1]S.D.Ganichev,S.A.Tarasenko,V.V.Bel’kov.Spin Currentsin Diluted Magnetic Semiconductors.[J].Physical Review Letters. 2009, 102, 156602.
[2]Miao M.S and Walter R. L. Lambrecht. Electronic structure and magnetic properties of transition-metal-doped 3C and 4H silicon carbide[J]. Physicsl Review B 2006 74, 235218.
[3]Wolf S. A,Awschalom D. D,Buhrman R. A,et a1.Spintro-nics:a spin-based electronics vision for the future[J]. Science 2001, 294(5546),1488-1495.
[4]顾敏霞,赵文琴.稀磁半导体材料[J].上海半导体,1991,1,27-33.
[5]金成刚,吴雪梅,诸葛兰.SiC稀磁半导体材料研究进展[J].纳2007,12-1053-06,1671-4776.
[6]Hidenobu Hori, Saki Sonoda, Takahiko Sasaki and Yoshiyuki Yamamoto. High-TC ferromagnetism in diluted magnetic semiconducting GaN:Mn films.[J].2002.Vol.324. 1-4.142-150
[7]Prellier W, Fouchet A, Mercey B. Oxide-diluted magnetic semiconductors: a review of theexperimental status[J].Journal of Physics-Condensed Matter. 2003,15(37),1583-1601.
[8]常凯,夏建白,稀磁半导体-自旋和电荷的桥梁[J]物理评述2004, 33, 6 414-418.
[9]刘宜华,张连生.稀释磁性半导体[M].物理学进展,1994,14(1) 82-120.
[10]Yan Chong and YU Jun, Development in Spintronics[J].Research&Progress of SSE 2005.2 25 1.
[11]Yoon-Suk Kim, Yong-Chae Chung and Sung-Chul Yi. Electronic structure and half-metallic property of Mn-doped ?-SiC diluted magnetic semiconductor[J]. Materials Science and Engineering B 2006 126 194–196.
[12]Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J]. Science, 2000, 287(11),1019–1022.
[13]Dietl T,Ferromagnetic semiconductors[J] Semicond. Sci. Technol. 2002 17 377–392.
[14]Miao M S. Magnetic properties of substitutional 3d transition metal impurities in silicon carbide[J]. Physical Review,2003 12 68 25204-125213.
[15]Beeler F, Electronic and magnetic structure of 3d-transition-metal point defects in silicon calculated from first principles[J] Physical Review. 1990 41,1603-1624.
[16]J.L.Hudgins,G.S.Simin et al.An assessment of wide bandgap semiconductors for power devices[J].IEEE Trans. PowerElect. 2003,18(3), 907–914.
[17]H.Matsunami,T.Kimoto et al.Step-controlled epitaxial growth of SiC:High quality homoepitaxy[J].Materials Science and Engineering R Reports 1997,20(3),125-166.
[18]裴立宅,唐元洪,陈扬文等.硅纳米线纳米电子器件及其制备技术[J].电子元件与材料, 2004, 23(10), 44-47.
[19]Jiang D.S.,Y.Makita. et al.Eletrical properties and photoluminescence of Tedoped GaAs grown by molecular beam epitaxy[J],Journal of.Appled.Physics.1982,53(2).999-1006.
[20]C.H.Carter et al.Sopicon Carbide and Nitride Wide Band Gap Semiconductors[J].MRS Symposium Proceedings,1994,339,595.
[21]V. A. Gubanov and C. Boekema Electronic structure of cubic silicon–carbide doped by 3d magnetic ions[J] . Appl. Phys. Lett 2001 Vol.78,No.2, 216-218.
[22]郝跃彭军杨根堂《碳化硅宽带隙半导体技术》[M]北京:科学出版社2000
[23]H Mimura,T Matsumotto,Y Kanemitsu.Blue electroluminescence from poroussilicon carbide[J]. Applied Physics Letters,1994,65(26):3350~3352.
[24]Micheal E.Levinshtein杨树人(译)《先进半导体材料性能与数据手册》[M]北京:学工业出版社,2003.
[25]C.Y.Sua,Z.Y.Juang et al.The field emission characteristics of carbon nanotubes coated by boron nitride film[J].Diamond and Related Materials,2007,16(5),1393-1397.
[26]Zhang J H et al.4H-SiC power bipolar junction transistor with a very low specific on-resistance of 2.9m??cm2. [J].IEEE Eletron Device Letters,2006,27(5),368-370.
[27]李晋闽.SiC材料及器件研制的进展[J].物理,2000,29(8),481-487.
[28]M.Ikeda,H.Matsunami, T.Tanaka. et al..Site effect on the impurity levels in 4H,6H,and 15R SiC[J]. Physical Review B 1980,22(6),2842-2854.
[29]K. Bouziane, M. Mamor, M. Elzain. et al. Defects and magnetic properties in Mn-implanted 3C-SiC epilayer on Si(100):Experiments and first-principles calculations[J]. Physical Review B 2008.78, 195305
[30]Fumiyoshi Takano,Wenhong Wang,and Hiro Akinaga Characterization of Mn-doped 3C-SiC prepared by ion implantation[J].Journal of Applied Physics 2007, 09N510,101.
[31]N. I. Medvedeva, E. I. Yur’eva, A. L. Ivanovskii et al. Electronic Structure of Cubic Silicon Carbide with ubstitutional 3d Impurities at Si and C Sites [J].Electronic and optical properties of semiconductors. 2003.Vol.37, No.11, 1281–1284.
[32]Wenhong Wang , Fumiyoshi Takano, Hironori Ofuchi and Hiro Akinaga. Local structural, magnetic and magneto-optical properties of Mn-doped SiC films prepared on a 3C–SiC(001) wafer.New Journal of Physics[J] 2008,Vol.10.055006.
[33]Bo Song and Huiqiang B.Magnetic properties of Mn-droped 6H-SiC [J]Applied Physics Letters 2009,94,102508.
[34]N. Theodoropoulou, A. F. Hebard, S. N. G. Chu, M. E. Overberg, C. R. Abernathy. Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC[J]. J.Vac.Sci.Technol. 2002.A20,579
[35]Zhao Huang and Qianwang Chen Magnetic properties of Cr-doped 6H-SiC single crystals[J] Journal of magnetism and magnetic materials 2007,313 ,111-114.
[36]S.B.Ma, Y.P.Sun, Magnetic properties of Mn-doped cubic silicon carbide [J] Physica B, 2007, 122-126.
[37]S.J. Pearton, K.P. Lee Magnetism in SiC Implanted with High Doses of Fe and Mn [J] Journal of Electronic materials 2002, 31, 5.
[38]张威虎,张富春,张志勇,吕淑媛,杨延宁. Fe掺杂SiC纳米管的电子结构和磁性[J].中国科学物理学2010, 40(4) 425-432.
[39]陈小龙等.微量元素掺杂稳定SiC晶型研究进展[J]. J. Am. Chem. Soc.2009 13,11376-1377.
[40]S.J. Pearton , Y.D. Park. Ferromagnetism in GaN and SiC doped with transition metals[J]. Thin Solid Films 2004 447-448 493–501
[41]Andrei N. Timoshevskii, Victor F. Los, and Sergey A. Kalkuta. Ab initio studies of magnetism in transition-metal-doped silicon carbide[J]. Physical Review B 2007 76, 165204.
[42]H. L. Grubin. Diluted Magnetic Semiconductor Superlattices. [J]. Proc. of SPIE.2006 Vol. 6212, 621205.
[43]Z.D. Sha, X.M. Wu, L.J. Zhuge. et al. Initial study on the structure and photoluminescence properties of SiC films doped with Al.[J].Applied Surface Science 2006 252 4340–4344.
[44]L. Bergqvist, O. Eriksson. Magnetic Percolation in Diluted Magnetic Semiconductors. [J]. Physical Review Letters. 2004.Vol. 93, Num. 13
[45]K. Bouziane M. Mamor, and M. Elzain. Defects and magnetic properties in Mn-implanted 3C-SiC epilayer on Si(100):Experiments and first-principles calculations. [J]. Physical Review B 2008.78, 195305.
[46]V. A. Gubanova and C. Boekema Electronic structure of cubic silicon–carbide doped by 3d magnetic ions. [J]. Applied Physical Letters 2001 Vol. 78, Num. 2
[47]H. M. McGlothlin, D. T. Morisette. et al. 4kV Silicon Carbide Schottky Diodes for High frequency Switching Applications. [J] IEEE Device Research Conf, Piscataway : IEEE Electron Devices Society, 1999, 36-42
[48]Y.A. Vodakov, E.N. Mokhov. et al. Progress in the growth and research of crystals for wide-gap semiconducting materials. [J]. Physics of the Solid State, 1999, 41, 5, 742-745
[49]C.H.Carter et al.Sopicon Carbide and Nitride Wide Band Gap Semiconductors[J] Symposium Proceedings,1994,339,595.
[50]V.E.Chelnokov,A.L.Syrkin.et al.High temperature electronics using SiC actual situation and unsolved problems[J].Mater.Sci.Eng.1997,B46:248-253.
[51]郑治祥.化学气相沉积碳化硅薄膜的研究[J].酸盐学报,1995,23(5):550-554.
[52]C. Ghica, C. Ristoscu, G. Socol. et al. Growth and characterization of 3C-SiC films obtained byfs laser ablation. [J]. Applied Surface Science. 2006 252 4672–4677
[53]雷天民,陈治明,余明斌等.Si基底上外延3C-SiC薄层的XPS分析[J].半导体学报,2000,21(3):303.
[54]任建新.物理清洗[M].北京:化学工艺出版社,2000.
[55]Sha Z D , Wu X M , Zhuge L J . Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique[J]. Journal of.Appled.Physics2005 ,79.250.
[56]许振嘉.半导体的检测与分析[M].北京:科学出版社,2007.
[57]陈治明,王建农,半导体器件的材料物理学基础[M],北京,科学出版社,1999.
[58]B. Ozpineci, L. M. Tolbert.et al.Characterization of SiC schottky diodes at different temperatures[J].IEEE Power Elect. Lett., 2003 ,1(2), 54–57.
[59]Tsuyoshi, Funaki et al .Power Conversion With SiC Devices at Extremely High Ambient Tempera -tures[J] IEEE Transactions on Dielectrics and Electrical Insulation, 2007,10,1322-1324.
[60]Mazhar Tayel, Ayman El-Shawar. et al.The Influence of Doping Concentration, Temperature, and Electric Field on Mobility of Silicone Carbide Materials[J]. International Conference on Software Engineering 2006 Proc,2006,651-652.
[61]Y. M. Tairov, V. F. Tevetkov.et al. Investigation of growth processes of ingots of silicon carbide single crystals[J]. Journal of Crystal Growth , 1978, 43, 2, 209-212.
[62]H. M. Hobgood, D. L. Barrett,et al. Large diameter 6H-SiC for microwave device applications[J]. Journal of Crystal Growth, 1994, 137, 1-2, 181-186.
[63]Y.Sun, T.Miyasato et al. Infrared Absorption Properties of Nanocrystalline Cubic SiC Films[J], .Japanese.Journal of Appled.Physics.1998,37,5485-5489.
[64]J.F.Moudler,Handbook of X-ray photoelectron Spectroscopy[M], Perkin Elmer,Corp,Mn,1992 .
[65]G.van der Laan and I.W.Kirkman,The 2p absorption spectra of 3d transition metal compounds in tetrahedral and octahedral symmetry[J] J .Phys..Condens.Matter 1992,4,4189.
[66]Gyong SoK Song,Masaki Korayshi et al Soft X-ray Absorption and Photoemission Studies of Ferromagnetic Mn-Implanted 3C-SiC [J]. Japanese Journal of Applied Physics 2008,47,9,7113-7116.
[67]K.W. Edmonds,N.R.S. farley,T.K.Johal,R.P.CamPoin,B.L.Gallagher,C.T.Foxon and G.van der Laan,MnL3,2 x-ray absorption from (Ga,Mn)As and (Ga,Mn)N [J].Journal of Appl.Physics.2004.95.7166.
[68]Liu X J, Song C, Zeng F, et al. Enhancement of electrical and ferromagnetic properties by additional Al doping in Co: ZnO thin films[J],Journal of. Physics: Condens. Matter, 2007, 19,296208.
[69]Coey J M D, Venkatesan M, Fitzgerald C B et al. Synthesis and magnetic properties of Mn-doped ZnO nanorods via radio frequency plasma deposition[J] Natural Materials.2005, 4,173-179.
[70]唐军,刘忠良等.Mn掺杂SiC磁性薄膜的结构表征[J].物理学报2010,Vol.59,No.7,477-7.
[71]U. Gottlieb, A. Sulpice, B. Lambert-Andron et al, O. Laborde. Magnetic properties of single crystalline Mn4Si7. [J]. Journal of Alloys and Compounds.2003 361 13–18.
[72]Zhang Z Y,Wu X L, Xiong S J,et al. On the origin of the 417and 437nm double-peak emission in porous Si with crystallite size smaller than 3.0nm[J] Physics Letters:A ,2003,313,467-471.
[73]宋曙光等.Mn、Co掺杂SiC薄膜结构与光致发光性能研究[J].功能材料,2008,8(39),1253-1255.
[74]S.S.Chang,A.Sakai et al,Luminescence properties of spark-processed[J].Materials Letters .2004,58,1212.
[75]R Reitano,G Foti,C F Pirri,F Giorgis.et al.Room temperature blue light emission from ECR-CVD deposited nano-crystalline SiC.[J].Materials.Science and Engineering C.2001,15, 299.
[76]X.L Wu,S J Xiong,G G Huang,Y F Mei.et al. Time Resolved Photoluminescence of ZnO Nanoparticles under Low Photon Energy Excitation [J].Phys.Rev.Lett.200391,157402-1.
[77]X Zhao, O Schoenfeld, Y Aoyagi, T.sugano, Formation of Si quantum dots in nanocrystalline silicon[J]. Appled.Physics.Letters.1994,65,1290.
[78]A.Uddin, H.Mitsuhashi.et al. Investigation of Deep Levels and Residual Impurities in Sublimation-Grown SiC Substrates. [J]. Japanese. Journal. Appled. Physics., 1994, 33, 908-911
[79]Fanhao Zeng, Xiang Xiong, Baiyuan Huang Cobalt silicide formations and magnetic propertiesof laser ablated Co(Cr) thin films. [J]. Intermetallics.2010,18 306–311.
[80]Seo K, Varadwaj KSK, Mohanty P, Lee SH, Jo YH, Jung MH, et al. Magnetic properties of single-crystalline CoSi nanowires[J]. Nano Lett 2007,7(5),1240–5.
[81]赵武等.SiC薄膜的制备及其光敏特性[J].华中科技大学学报,2007,35:37-40.
[82]Zhao Wu et al.Effect of N-doped Concentration in SiC Films on Photosensitive Characteristics[J]. Acta Photonica Sinica,2007,36:120-122.
[83]Yu. M. Tairov, V. F. Tsvetkov.et al General principles of growing large-size single crystals of various silicon carbide polytypes. [J]. Journal of Crystal Growth, 1981, 52, 2, 146-150
[84] Lee H J, Jeong S Y, Cho C R, et al. Study of diluted magnetic semiconductor: Co-doped ZnO [J]. Appl Phys Lett, 2002, 81(21),4020–4022.
[85]侯登陆.稀磁半导体的制备与性质[J].物理实验.2005 25 8.
[86]文军,张修兴. ZnO基稀磁半导体材料的研究进展[J].渭南师范学院学报2008 3,23,2.
[2]Miao M.S and Walter R. L. Lambrecht. Electronic structure and magnetic properties of transition-metal-doped 3C and 4H silicon carbide[J]. Physicsl Review B 2006 74, 235218.
[3]Wolf S. A,Awschalom D. D,Buhrman R. A,et a1.Spintro-nics:a spin-based electronics vision for the future[J]. Science 2001, 294(5546),1488-1495.
[4]顾敏霞,赵文琴.稀磁半导体材料[J].上海半导体,1991,1,27-33.
[5]金成刚,吴雪梅,诸葛兰.SiC稀磁半导体材料研究进展[J].纳2007,12-1053-06,1671-4776.
[6]Hidenobu Hori, Saki Sonoda, Takahiko Sasaki and Yoshiyuki Yamamoto. High-TC ferromagnetism in diluted magnetic semiconducting GaN:Mn films.[J].2002.Vol.324. 1-4.142-150
[7]Prellier W, Fouchet A, Mercey B. Oxide-diluted magnetic semiconductors: a review of theexperimental status[J].Journal of Physics-Condensed Matter. 2003,15(37),1583-1601.
[8]常凯,夏建白,稀磁半导体-自旋和电荷的桥梁[J]物理评述2004, 33, 6 414-418.
[9]刘宜华,张连生.稀释磁性半导体[M].物理学进展,1994,14(1) 82-120.
[10]Yan Chong and YU Jun, Development in Spintronics[J].Research&Progress of SSE 2005.2 25 1.
[11]Yoon-Suk Kim, Yong-Chae Chung and Sung-Chul Yi. Electronic structure and half-metallic property of Mn-doped ?-SiC diluted magnetic semiconductor[J]. Materials Science and Engineering B 2006 126 194–196.
[12]Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J]. Science, 2000, 287(11),1019–1022.
[13]Dietl T,Ferromagnetic semiconductors[J] Semicond. Sci. Technol. 2002 17 377–392.
[14]Miao M S. Magnetic properties of substitutional 3d transition metal impurities in silicon carbide[J]. Physical Review,2003 12 68 25204-125213.
[15]Beeler F, Electronic and magnetic structure of 3d-transition-metal point defects in silicon calculated from first principles[J] Physical Review. 1990 41,1603-1624.
[16]J.L.Hudgins,G.S.Simin et al.An assessment of wide bandgap semiconductors for power devices[J].IEEE Trans. PowerElect. 2003,18(3), 907–914.
[17]H.Matsunami,T.Kimoto et al.Step-controlled epitaxial growth of SiC:High quality homoepitaxy[J].Materials Science and Engineering R Reports 1997,20(3),125-166.
[18]裴立宅,唐元洪,陈扬文等.硅纳米线纳米电子器件及其制备技术[J].电子元件与材料, 2004, 23(10), 44-47.
[19]Jiang D.S.,Y.Makita. et al.Eletrical properties and photoluminescence of Tedoped GaAs grown by molecular beam epitaxy[J],Journal of.Appled.Physics.1982,53(2).999-1006.
[20]C.H.Carter et al.Sopicon Carbide and Nitride Wide Band Gap Semiconductors[J].MRS Symposium Proceedings,1994,339,595.
[21]V. A. Gubanov and C. Boekema Electronic structure of cubic silicon–carbide doped by 3d magnetic ions[J] . Appl. Phys. Lett 2001 Vol.78,No.2, 216-218.
[22]郝跃彭军杨根堂《碳化硅宽带隙半导体技术》[M]北京:科学出版社2000
[23]H Mimura,T Matsumotto,Y Kanemitsu.Blue electroluminescence from poroussilicon carbide[J]. Applied Physics Letters,1994,65(26):3350~3352.
[24]Micheal E.Levinshtein杨树人(译)《先进半导体材料性能与数据手册》[M]北京:学工业出版社,2003.
[25]C.Y.Sua,Z.Y.Juang et al.The field emission characteristics of carbon nanotubes coated by boron nitride film[J].Diamond and Related Materials,2007,16(5),1393-1397.
[26]Zhang J H et al.4H-SiC power bipolar junction transistor with a very low specific on-resistance of 2.9m??cm2. [J].IEEE Eletron Device Letters,2006,27(5),368-370.
[27]李晋闽.SiC材料及器件研制的进展[J].物理,2000,29(8),481-487.
[28]M.Ikeda,H.Matsunami, T.Tanaka. et al..Site effect on the impurity levels in 4H,6H,and 15R SiC[J]. Physical Review B 1980,22(6),2842-2854.
[29]K. Bouziane, M. Mamor, M. Elzain. et al. Defects and magnetic properties in Mn-implanted 3C-SiC epilayer on Si(100):Experiments and first-principles calculations[J]. Physical Review B 2008.78, 195305
[30]Fumiyoshi Takano,Wenhong Wang,and Hiro Akinaga Characterization of Mn-doped 3C-SiC prepared by ion implantation[J].Journal of Applied Physics 2007, 09N510,101.
[31]N. I. Medvedeva, E. I. Yur’eva, A. L. Ivanovskii et al. Electronic Structure of Cubic Silicon Carbide with ubstitutional 3d Impurities at Si and C Sites [J].Electronic and optical properties of semiconductors. 2003.Vol.37, No.11, 1281–1284.
[32]Wenhong Wang , Fumiyoshi Takano, Hironori Ofuchi and Hiro Akinaga. Local structural, magnetic and magneto-optical properties of Mn-doped SiC films prepared on a 3C–SiC(001) wafer.New Journal of Physics[J] 2008,Vol.10.055006.
[33]Bo Song and Huiqiang B.Magnetic properties of Mn-droped 6H-SiC [J]Applied Physics Letters 2009,94,102508.
[34]N. Theodoropoulou, A. F. Hebard, S. N. G. Chu, M. E. Overberg, C. R. Abernathy. Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC[J]. J.Vac.Sci.Technol. 2002.A20,579
[35]Zhao Huang and Qianwang Chen Magnetic properties of Cr-doped 6H-SiC single crystals[J] Journal of magnetism and magnetic materials 2007,313 ,111-114.
[36]S.B.Ma, Y.P.Sun, Magnetic properties of Mn-doped cubic silicon carbide [J] Physica B, 2007, 122-126.
[37]S.J. Pearton, K.P. Lee Magnetism in SiC Implanted with High Doses of Fe and Mn [J] Journal of Electronic materials 2002, 31, 5.
[38]张威虎,张富春,张志勇,吕淑媛,杨延宁. Fe掺杂SiC纳米管的电子结构和磁性[J].中国科学物理学2010, 40(4) 425-432.
[39]陈小龙等.微量元素掺杂稳定SiC晶型研究进展[J]. J. Am. Chem. Soc.2009 13,11376-1377.
[40]S.J. Pearton , Y.D. Park. Ferromagnetism in GaN and SiC doped with transition metals[J]. Thin Solid Films 2004 447-448 493–501
[41]Andrei N. Timoshevskii, Victor F. Los, and Sergey A. Kalkuta. Ab initio studies of magnetism in transition-metal-doped silicon carbide[J]. Physical Review B 2007 76, 165204.
[42]H. L. Grubin. Diluted Magnetic Semiconductor Superlattices. [J]. Proc. of SPIE.2006 Vol. 6212, 621205.
[43]Z.D. Sha, X.M. Wu, L.J. Zhuge. et al. Initial study on the structure and photoluminescence properties of SiC films doped with Al.[J].Applied Surface Science 2006 252 4340–4344.
[44]L. Bergqvist, O. Eriksson. Magnetic Percolation in Diluted Magnetic Semiconductors. [J]. Physical Review Letters. 2004.Vol. 93, Num. 13
[45]K. Bouziane M. Mamor, and M. Elzain. Defects and magnetic properties in Mn-implanted 3C-SiC epilayer on Si(100):Experiments and first-principles calculations. [J]. Physical Review B 2008.78, 195305.
[46]V. A. Gubanova and C. Boekema Electronic structure of cubic silicon–carbide doped by 3d magnetic ions. [J]. Applied Physical Letters 2001 Vol. 78, Num. 2
[47]H. M. McGlothlin, D. T. Morisette. et al. 4kV Silicon Carbide Schottky Diodes for High frequency Switching Applications. [J] IEEE Device Research Conf, Piscataway : IEEE Electron Devices Society, 1999, 36-42
[48]Y.A. Vodakov, E.N. Mokhov. et al. Progress in the growth and research of crystals for wide-gap semiconducting materials. [J]. Physics of the Solid State, 1999, 41, 5, 742-745
[49]C.H.Carter et al.Sopicon Carbide and Nitride Wide Band Gap Semiconductors[J] Symposium Proceedings,1994,339,595.
[50]V.E.Chelnokov,A.L.Syrkin.et al.High temperature electronics using SiC actual situation and unsolved problems[J].Mater.Sci.Eng.1997,B46:248-253.
[51]郑治祥.化学气相沉积碳化硅薄膜的研究[J].酸盐学报,1995,23(5):550-554.
[52]C. Ghica, C. Ristoscu, G. Socol. et al. Growth and characterization of 3C-SiC films obtained byfs laser ablation. [J]. Applied Surface Science. 2006 252 4672–4677
[53]雷天民,陈治明,余明斌等.Si基底上外延3C-SiC薄层的XPS分析[J].半导体学报,2000,21(3):303.
[54]任建新.物理清洗[M].北京:化学工艺出版社,2000.
[55]Sha Z D , Wu X M , Zhuge L J . Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique[J]. Journal of.Appled.Physics2005 ,79.250.
[56]许振嘉.半导体的检测与分析[M].北京:科学出版社,2007.
[57]陈治明,王建农,半导体器件的材料物理学基础[M],北京,科学出版社,1999.
[58]B. Ozpineci, L. M. Tolbert.et al.Characterization of SiC schottky diodes at different temperatures[J].IEEE Power Elect. Lett., 2003 ,1(2), 54–57.
[59]Tsuyoshi, Funaki et al .Power Conversion With SiC Devices at Extremely High Ambient Tempera -tures[J] IEEE Transactions on Dielectrics and Electrical Insulation, 2007,10,1322-1324.
[60]Mazhar Tayel, Ayman El-Shawar. et al.The Influence of Doping Concentration, Temperature, and Electric Field on Mobility of Silicone Carbide Materials[J]. International Conference on Software Engineering 2006 Proc,2006,651-652.
[61]Y. M. Tairov, V. F. Tevetkov.et al. Investigation of growth processes of ingots of silicon carbide single crystals[J]. Journal of Crystal Growth , 1978, 43, 2, 209-212.
[62]H. M. Hobgood, D. L. Barrett,et al. Large diameter 6H-SiC for microwave device applications[J]. Journal of Crystal Growth, 1994, 137, 1-2, 181-186.
[63]Y.Sun, T.Miyasato et al. Infrared Absorption Properties of Nanocrystalline Cubic SiC Films[J], .Japanese.Journal of Appled.Physics.1998,37,5485-5489.
[64]J.F.Moudler,Handbook of X-ray photoelectron Spectroscopy[M], Perkin Elmer,Corp,Mn,1992 .
[65]G.van der Laan and I.W.Kirkman,The 2p absorption spectra of 3d transition metal compounds in tetrahedral and octahedral symmetry[J] J .Phys..Condens.Matter 1992,4,4189.
[66]Gyong SoK Song,Masaki Korayshi et al Soft X-ray Absorption and Photoemission Studies of Ferromagnetic Mn-Implanted 3C-SiC [J]. Japanese Journal of Applied Physics 2008,47,9,7113-7116.
[67]K.W. Edmonds,N.R.S. farley,T.K.Johal,R.P.CamPoin,B.L.Gallagher,C.T.Foxon and G.van der Laan,MnL3,2 x-ray absorption from (Ga,Mn)As and (Ga,Mn)N [J].Journal of Appl.Physics.2004.95.7166.
[68]Liu X J, Song C, Zeng F, et al. Enhancement of electrical and ferromagnetic properties by additional Al doping in Co: ZnO thin films[J],Journal of. Physics: Condens. Matter, 2007, 19,296208.
[69]Coey J M D, Venkatesan M, Fitzgerald C B et al. Synthesis and magnetic properties of Mn-doped ZnO nanorods via radio frequency plasma deposition[J] Natural Materials.2005, 4,173-179.
[70]唐军,刘忠良等.Mn掺杂SiC磁性薄膜的结构表征[J].物理学报2010,Vol.59,No.7,477-7.
[71]U. Gottlieb, A. Sulpice, B. Lambert-Andron et al, O. Laborde. Magnetic properties of single crystalline Mn4Si7. [J]. Journal of Alloys and Compounds.2003 361 13–18.
[72]Zhang Z Y,Wu X L, Xiong S J,et al. On the origin of the 417and 437nm double-peak emission in porous Si with crystallite size smaller than 3.0nm[J] Physics Letters:A ,2003,313,467-471.
[73]宋曙光等.Mn、Co掺杂SiC薄膜结构与光致发光性能研究[J].功能材料,2008,8(39),1253-1255.
[74]S.S.Chang,A.Sakai et al,Luminescence properties of spark-processed[J].Materials Letters .2004,58,1212.
[75]R Reitano,G Foti,C F Pirri,F Giorgis.et al.Room temperature blue light emission from ECR-CVD deposited nano-crystalline SiC.[J].Materials.Science and Engineering C.2001,15, 299.
[76]X.L Wu,S J Xiong,G G Huang,Y F Mei.et al. Time Resolved Photoluminescence of ZnO Nanoparticles under Low Photon Energy Excitation [J].Phys.Rev.Lett.200391,157402-1.
[77]X Zhao, O Schoenfeld, Y Aoyagi, T.sugano, Formation of Si quantum dots in nanocrystalline silicon[J]. Appled.Physics.Letters.1994,65,1290.
[78]A.Uddin, H.Mitsuhashi.et al. Investigation of Deep Levels and Residual Impurities in Sublimation-Grown SiC Substrates. [J]. Japanese. Journal. Appled. Physics., 1994, 33, 908-911
[79]Fanhao Zeng, Xiang Xiong, Baiyuan Huang Cobalt silicide formations and magnetic propertiesof laser ablated Co(Cr) thin films. [J]. Intermetallics.2010,18 306–311.
[80]Seo K, Varadwaj KSK, Mohanty P, Lee SH, Jo YH, Jung MH, et al. Magnetic properties of single-crystalline CoSi nanowires[J]. Nano Lett 2007,7(5),1240–5.
[81]赵武等.SiC薄膜的制备及其光敏特性[J].华中科技大学学报,2007,35:37-40.
[82]Zhao Wu et al.Effect of N-doped Concentration in SiC Films on Photosensitive Characteristics[J]. Acta Photonica Sinica,2007,36:120-122.
[83]Yu. M. Tairov, V. F. Tsvetkov.et al General principles of growing large-size single crystals of various silicon carbide polytypes. [J]. Journal of Crystal Growth, 1981, 52, 2, 146-150
[84] Lee H J, Jeong S Y, Cho C R, et al. Study of diluted magnetic semiconductor: Co-doped ZnO [J]. Appl Phys Lett, 2002, 81(21),4020–4022.
[85]侯登陆.稀磁半导体的制备与性质[J].物理实验.2005 25 8.
[86]文军,张修兴. ZnO基稀磁半导体材料的研究进展[J].渭南师范学院学报2008 3,23,2.