半导体激光器AuSn焊料烧结工艺优化与器件特性评价
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摘要
应用In等软焊料焊装的高功率半导体激光器及其阵列,通常具有焊料易蔓延、电迁移及抗疲劳性差的缺点。器件长时间工作后,电极中Au原子可能会渗入In焊层中导致其受污染失效,严重影响了器件的工作性能和寿命。
本文将从高功率半导体激光器的热特性分析入手,在ANSYS软件有限元分析和制备半导体激光器AuSn焊料两方面展开。针对实验室已有的808nm半导体激光器材料和结构特点,进行了半导体激光器的AuSn焊料制备及工艺试验。主要内容有：
1)利用ANSYS软件,对808nm半导体激光器的焊装方式、不同焊料焊装的器件内部温度场分布进行了有限元分析,并对结果加以讨论；
2)采用AlN基片作为激光器管芯与无氧铜热沉之间过渡热沉,在其上进行金锡焊料的制备。实验室自行搭建电镀平台并配置了新型的无氰电镀液,试验探索了此溶液条件下能达到电镀均匀平整厚Au最佳条件;
3)使用磁控溅射和电镀结合热蒸发镀膜的方法,在AlN基片上制备AuSn焊料；探索大功率半导体激光器中AuSn合金作为焊层的烧结工艺并优化：
4)将利用无氰电镀液制备的AuSn焊料与以往含氰电镀液制备出的AuSn焊料进行对比,提出了改进的方向。
Creep and electrical movement of solder usually occurred in high power semiconductor lasers and linear-array semiconductor lasers packaged with soft solders such as In solder is relatively weak in enduring fatigue in device.Au electrode atoms into In solder layer may be caused its failure,after the device works long time,which would seriously influence the performance and lifetime of semiconductor laser.
Study on the thermal characteristics of high power semiconductor lasers has been persent in this work. The finite element analysis software of ANSYS and AuSn alloy solders structures have been researched theoretically and experimentally in detail focused on 808nm semiconductor laser. Main works are summarized as the following. 1) Simulation temperature distribution within the finite element analysis of 808nm semiconductor laser welding by different methods and solder with ANSYS software,and discusse the result.
2)We used the structure by AlN ceramic plate used as matching submount between laser chip and copper hear sink and AuSn alloy as solder. An acid electroplating solution of Au was prepared and the electroplating equipment was designed and set up based on our lab. The optimal conditions for uniform and smooth thick Au electroplating with acid solution were studied, qualified Au despositing layer was obtained,w hich was satisfied for device bonding.
3)Multiple metal layers for device bonding were prepared and deposited onto AlN submount by magnetron sputter, electroplating and thermal evaporating process. The soldering process of AuSn alloys for device bonding was studied and the soldering condition was optimized.
4) Compare the prepared non-cyanide plating solution AuSn solder with the prepared cyanide plating solution AuSn solder, direction of development of improved.
本文将从高功率半导体激光器的热特性分析入手,在ANSYS软件有限元分析和制备半导体激光器AuSn焊料两方面展开。针对实验室已有的808nm半导体激光器材料和结构特点,进行了半导体激光器的AuSn焊料制备及工艺试验。主要内容有：
1)利用ANSYS软件,对808nm半导体激光器的焊装方式、不同焊料焊装的器件内部温度场分布进行了有限元分析,并对结果加以讨论；
2)采用AlN基片作为激光器管芯与无氧铜热沉之间过渡热沉,在其上进行金锡焊料的制备。实验室自行搭建电镀平台并配置了新型的无氰电镀液,试验探索了此溶液条件下能达到电镀均匀平整厚Au最佳条件;
3)使用磁控溅射和电镀结合热蒸发镀膜的方法,在AlN基片上制备AuSn焊料；探索大功率半导体激光器中AuSn合金作为焊层的烧结工艺并优化：
4)将利用无氰电镀液制备的AuSn焊料与以往含氰电镀液制备出的AuSn焊料进行对比,提出了改进的方向。
Creep and electrical movement of solder usually occurred in high power semiconductor lasers and linear-array semiconductor lasers packaged with soft solders such as In solder is relatively weak in enduring fatigue in device.Au electrode atoms into In solder layer may be caused its failure,after the device works long time,which would seriously influence the performance and lifetime of semiconductor laser.
Study on the thermal characteristics of high power semiconductor lasers has been persent in this work. The finite element analysis software of ANSYS and AuSn alloy solders structures have been researched theoretically and experimentally in detail focused on 808nm semiconductor laser. Main works are summarized as the following. 1) Simulation temperature distribution within the finite element analysis of 808nm semiconductor laser welding by different methods and solder with ANSYS software,and discusse the result.
2)We used the structure by AlN ceramic plate used as matching submount between laser chip and copper hear sink and AuSn alloy as solder. An acid electroplating solution of Au was prepared and the electroplating equipment was designed and set up based on our lab. The optimal conditions for uniform and smooth thick Au electroplating with acid solution were studied, qualified Au despositing layer was obtained,w hich was satisfied for device bonding.
3)Multiple metal layers for device bonding were prepared and deposited onto AlN submount by magnetron sputter, electroplating and thermal evaporating process. The soldering process of AuSn alloys for device bonding was studied and the soldering condition was optimized.
4) Compare the prepared non-cyanide plating solution AuSn solder with the prepared cyanide plating solution AuSn solder, direction of development of improved.
引文
[1]黄德修,刘雪.半导体激光器及其应用[M].北京：国防工业出版社,1999.5.
[2]范安辅,徐天华.激光器技术物理[M].成都：四川大学出版社,1991.
[3]黄德修.半导体光电子学[M].成都：电子科技大学出版,1989.
[4]Arakawa Y.and Sakaki H. Appl.phys.Lett,1982,40:939.
[5]梁春广,张翼.GaN-第三代半导体的曙光.半导体学报.1992,20(2)：89.
[6]原田卫.日经电子,1997,702：23.
[7]NaKamura S.et al. Jpn.J.Appl.Phys.part2,1996,35(1B):274.
[8]J.Ciulik, M.R Notis, J. Alloys Compounds,1993(191).71.
[9]江剑平.半导体激光器[M].北京：电子工业出版社,2000.
[10]程东明.无铝半导体激光器阵列极其组装技术的研究：[博士学位论文].长春：中国科学院长春光学精密机械与物理研究所,2003.
[11]Michio Ohkubo, Tetsuro Ijisur, Akira Iketani, and Tosio Kikuta.980nm Aluminum-free InGaAs/InGaAs/InGaP GRIN-SCH SL-QW laser. IEEE Journal of Quantum Electronics Vol.30 No.2.February 1994 408-413.
[12]G.Beister, J. Maege, D.Gutsche, G.Erber. Simple method for examining sulphur passivation of facets in InGaAs-AlGaAs(0.98 μm)laser diodes. Appl.Phys.Lett.68(18),29 April 1996 2467-2468.
[13]Nicolas Wiedmann, Jurgen Jandeleit. Defects and degradation of InGaAs/GaAs high power diode lasers. SPIE Vol.3889(2000)90-95.
[14]J.A.Skidmore, B.L.Freitas.Silicon monolithic microchannel-cooled laser diode array App;ied physics letters Volume 77, Number 1 July 2000,10-12.
[15]曹玉莲.高功率半导体量子阱激光器的可靠性研究：[硕士学位论文].长春：中国科学院长春光学精密机械与物理研究所,2003.
[16]赵镇南.传热学[M].北京：高等教育出版社,2002第一版.
[17]F.R.Gfeller, P.Buchmann, P.W.Epperlein.Degradation and lifetime studies of high-power single-quantum-well AlGaAs ridge laser. J.Appl.Ohys.Vol.72, No.6.15 September 1992 14-20.
[18]Dong Hoon Jang, Jung Kee Lee. Effects of Implanted materials on impurity-induced layer disordering in strained GaInAs/GaInAsP/GalnP/GaAs quantum well structure Jpn J.Appl.Phys.Vol.36(997) Pt.2, No.10B 1364-1367.
[19]Jas S.Yoo. Enhencement of output intensity limit of semiconductor lasers by chenmical passivation of mirror facets. IEEE.Photonics Technology Letters. Vol. No.3. March 1991 202-203.
[20]唐兴伦,范群波,张朝晖,李春阳ANSYS工程应用教程(热与电磁学篇)[M].北京：中国铁道出版社,2003
[21]张蕾,崔碧峰,黄宏娟,等.双有源区隧道再生半导体激光器温度场分布研究[J].半导体光电,2007,28(6)：761-765
[22]薄报学,高欣,等.808nm波长高功率阵列半导体激光器[J].中国激光,2001,28(6)：494-496
[23]张晓波,高鼎三.阵列式半导体激光器中的热特性[J].通信学报,1990,11(5)：34- 38
[24]张永刚,何友军,南矿军,等.半导体激光器的热场分析及热特征表征[J].稀有金属,2004,28(6)：551-553
[25]M J Liew, S Roy, K Scott. Development of a non-toxic electrolyte for soft Au electrodeposition :an overvies of work at University of Newcastle upon Tyne.Green Chemistry,2003,5:376-381.
[26]M.Hutter, H, Oppermann, G.Engelmann, et al. Calculation of shape and Experimental Creation of AuSn Solder Bumps for Filp Chip Applications. Electronic Components and Technology Conference,2002:282-288.
[27]周全法,尚通明.电镀废弃物与材料的回收利用[M].北京：化学工业出版社,2004.
[28]方景礼.电镀添加剂理论与应用.国防工业出版社[M].北京：国防工业出版社,2006.
[29]方景礼.实用电镀添加剂[M].北京：化学工业出版社,2007.
[30]周涛.金锡焊料及其在电子器件封装领域中的应用.电子与封装,2005,5(8)：5-8.
[31]许维源.近年来脉冲电镀发展概况.电镀与涂饰,2005,27(5)：25-29.
[32]朱瑞安,郭振常.脉冲电镀[M].北京：电子工业出版社,1986.
[33]朱晓东,李宁,李伟等.高速电镀锌工艺对镀层粗糙度及微观形貌的影响.中国有色金属学报,2005,15(1)：145-151.
[34]刘勇,罗义辉,魏子栋.脉冲电镀的演化现状.电镀与精饰,2005,27(5)：25-29.
[2]范安辅,徐天华.激光器技术物理[M].成都：四川大学出版社,1991.
[3]黄德修.半导体光电子学[M].成都：电子科技大学出版,1989.
[4]Arakawa Y.and Sakaki H. Appl.phys.Lett,1982,40:939.
[5]梁春广,张翼.GaN-第三代半导体的曙光.半导体学报.1992,20(2)：89.
[6]原田卫.日经电子,1997,702：23.
[7]NaKamura S.et al. Jpn.J.Appl.Phys.part2,1996,35(1B):274.
[8]J.Ciulik, M.R Notis, J. Alloys Compounds,1993(191).71.
[9]江剑平.半导体激光器[M].北京：电子工业出版社,2000.
[10]程东明.无铝半导体激光器阵列极其组装技术的研究：[博士学位论文].长春：中国科学院长春光学精密机械与物理研究所,2003.
[11]Michio Ohkubo, Tetsuro Ijisur, Akira Iketani, and Tosio Kikuta.980nm Aluminum-free InGaAs/InGaAs/InGaP GRIN-SCH SL-QW laser. IEEE Journal of Quantum Electronics Vol.30 No.2.February 1994 408-413.
[12]G.Beister, J. Maege, D.Gutsche, G.Erber. Simple method for examining sulphur passivation of facets in InGaAs-AlGaAs(0.98 μm)laser diodes. Appl.Phys.Lett.68(18),29 April 1996 2467-2468.
[13]Nicolas Wiedmann, Jurgen Jandeleit. Defects and degradation of InGaAs/GaAs high power diode lasers. SPIE Vol.3889(2000)90-95.
[14]J.A.Skidmore, B.L.Freitas.Silicon monolithic microchannel-cooled laser diode array App;ied physics letters Volume 77, Number 1 July 2000,10-12.
[15]曹玉莲.高功率半导体量子阱激光器的可靠性研究：[硕士学位论文].长春：中国科学院长春光学精密机械与物理研究所,2003.
[16]赵镇南.传热学[M].北京：高等教育出版社,2002第一版.
[17]F.R.Gfeller, P.Buchmann, P.W.Epperlein.Degradation and lifetime studies of high-power single-quantum-well AlGaAs ridge laser. J.Appl.Ohys.Vol.72, No.6.15 September 1992 14-20.
[18]Dong Hoon Jang, Jung Kee Lee. Effects of Implanted materials on impurity-induced layer disordering in strained GaInAs/GaInAsP/GalnP/GaAs quantum well structure Jpn J.Appl.Phys.Vol.36(997) Pt.2, No.10B 1364-1367.
[19]Jas S.Yoo. Enhencement of output intensity limit of semiconductor lasers by chenmical passivation of mirror facets. IEEE.Photonics Technology Letters. Vol. No.3. March 1991 202-203.
[20]唐兴伦,范群波,张朝晖,李春阳ANSYS工程应用教程(热与电磁学篇)[M].北京：中国铁道出版社,2003
[21]张蕾,崔碧峰,黄宏娟,等.双有源区隧道再生半导体激光器温度场分布研究[J].半导体光电,2007,28(6)：761-765
[22]薄报学,高欣,等.808nm波长高功率阵列半导体激光器[J].中国激光,2001,28(6)：494-496
[23]张晓波,高鼎三.阵列式半导体激光器中的热特性[J].通信学报,1990,11(5)：34- 38
[24]张永刚,何友军,南矿军,等.半导体激光器的热场分析及热特征表征[J].稀有金属,2004,28(6)：551-553
[25]M J Liew, S Roy, K Scott. Development of a non-toxic electrolyte for soft Au electrodeposition :an overvies of work at University of Newcastle upon Tyne.Green Chemistry,2003,5:376-381.
[26]M.Hutter, H, Oppermann, G.Engelmann, et al. Calculation of shape and Experimental Creation of AuSn Solder Bumps for Filp Chip Applications. Electronic Components and Technology Conference,2002:282-288.
[27]周全法,尚通明.电镀废弃物与材料的回收利用[M].北京：化学工业出版社,2004.
[28]方景礼.电镀添加剂理论与应用.国防工业出版社[M].北京：国防工业出版社,2006.
[29]方景礼.实用电镀添加剂[M].北京：化学工业出版社,2007.
[30]周涛.金锡焊料及其在电子器件封装领域中的应用.电子与封装,2005,5(8)：5-8.
[31]许维源.近年来脉冲电镀发展概况.电镀与涂饰,2005,27(5)：25-29.
[32]朱瑞安,郭振常.脉冲电镀[M].北京：电子工业出版社,1986.
[33]朱晓东,李宁,李伟等.高速电镀锌工艺对镀层粗糙度及微观形貌的影响.中国有色金属学报,2005,15(1)：145-151.
[34]刘勇,罗义辉,魏子栋.脉冲电镀的演化现状.电镀与精饰,2005,27(5)：25-29.