新型IGBT器件的设计与建模
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摘要
绝缘栅双极晶体管IGBT(Insulated Gate Bipolar Transistor)由于结合了MOSFET和BJT各自的优点,表现出开关速度高、饱和压降低和可耐高压、大电流等优良特性,是一种用途十分广泛的半导体功率器件,许多领域已经逐步取代了电力晶体管(GTR)和电力场效应晶体管(MOSFET)。目前,国内对IGBT产品的需求量日趋增多,但国内暂时还没有独立的生产厂家,所需的IGBT产品主要依赖进口,因此,开发和研制具有自主知识产权的性能优良的IGBT器件已成为迫切需要,本文鉴于此背景,努力和国内同行一道投入该领域中进行积极探索。
本文首先对IGBT的工作原理进行了简述,接着又简单介绍了半导体器件计算机模拟的相关知识。在对目前较为流行的IGBT器件结构载流子存储型槽栅IGBT(CSTBT,Carrier-Stored Trench IGBT)分析的基础上,提出了一种新型的功率半导体器件FH-TIGBT(Full Hole-barrier Layer Trench IGBT),在槽栅下新增的N型空穴阻挡层使得器件具有更低的饱和压降和抗短路能力,同时具有CSTBT的其他优点。本文在工艺上仿真实现了新型结构的IGBT器件,又进一步对其进行了器件模拟,仿真结果验证了其性能上的优越性。
此外本文还建立了FH-TIGBT的等效电路模型。在没有相应IGBT的SPICE模型库的前提下,利用等效的电路模型能更方便地实现相关电路的设计。通过合理的选择等效电路模型以及已知的器件特性曲线和有效的参数提取,使得所建立的模型与器件的性能有较好的吻合,得到与预期一致的合理结果。
Combining the best attributes of both MOSFET and BJT, the IGBT (Insulated Gate Bipolar Transistor) shows many advantages, such as voltage driving, high switching speed, low saturation voltage, undertaking high voltage and high current. This semiconductor power device has found abroad applications, and gradually takes the place of GTR and MOSFET. At present the high performance IGBT is needed urgently. However, most IGBT come from import because no unaided manufacturer in our country can be found so far. As a result, nowadays many researchers have turned to designing and developing new advanced IGBT devices.
In this thesis, we firstly introduce structure and principle of the device, and then briefly address simulation of the semiconductor device. Based on CSTBT, a new structure of IGBT has been proposed, which is called FH-TIGBT (Full Hole-barrier Layer Trench IGBT). With a layer of type N under the trench gate, this new device costs lower saturation voltage, but owns stronger ability of carrying out short circuits comparing to CSTBT. Besides, it contains all other advantages of CSTBT. The process simulation of the novel device has been implemented in this work, which verifies advantages of the new device.
We build an equivalent circuit model of FH-TIGBT. Without IGBT model in SPICE, this equivalent circuit model can be used in the circuit design expediently. The implementation contains device characters simulated, effectual parameters extracted and equivalent circuit model refined. We verified that the equivalent circuit model matches the characters of the new device perfectly. From the simulation results, the advantages of this novel semiconductor device can be seen obviously.
本文首先对IGBT的工作原理进行了简述,接着又简单介绍了半导体器件计算机模拟的相关知识。在对目前较为流行的IGBT器件结构载流子存储型槽栅IGBT(CSTBT,Carrier-Stored Trench IGBT)分析的基础上,提出了一种新型的功率半导体器件FH-TIGBT(Full Hole-barrier Layer Trench IGBT),在槽栅下新增的N型空穴阻挡层使得器件具有更低的饱和压降和抗短路能力,同时具有CSTBT的其他优点。本文在工艺上仿真实现了新型结构的IGBT器件,又进一步对其进行了器件模拟,仿真结果验证了其性能上的优越性。
此外本文还建立了FH-TIGBT的等效电路模型。在没有相应IGBT的SPICE模型库的前提下,利用等效的电路模型能更方便地实现相关电路的设计。通过合理的选择等效电路模型以及已知的器件特性曲线和有效的参数提取,使得所建立的模型与器件的性能有较好的吻合,得到与预期一致的合理结果。
Combining the best attributes of both MOSFET and BJT, the IGBT (Insulated Gate Bipolar Transistor) shows many advantages, such as voltage driving, high switching speed, low saturation voltage, undertaking high voltage and high current. This semiconductor power device has found abroad applications, and gradually takes the place of GTR and MOSFET. At present the high performance IGBT is needed urgently. However, most IGBT come from import because no unaided manufacturer in our country can be found so far. As a result, nowadays many researchers have turned to designing and developing new advanced IGBT devices.
In this thesis, we firstly introduce structure and principle of the device, and then briefly address simulation of the semiconductor device. Based on CSTBT, a new structure of IGBT has been proposed, which is called FH-TIGBT (Full Hole-barrier Layer Trench IGBT). With a layer of type N under the trench gate, this new device costs lower saturation voltage, but owns stronger ability of carrying out short circuits comparing to CSTBT. Besides, it contains all other advantages of CSTBT. The process simulation of the novel device has been implemented in this work, which verifies advantages of the new device.
We build an equivalent circuit model of FH-TIGBT. Without IGBT model in SPICE, this equivalent circuit model can be used in the circuit design expediently. The implementation contains device characters simulated, effectual parameters extracted and equivalent circuit model refined. We verified that the equivalent circuit model matches the characters of the new device perfectly. From the simulation results, the advantages of this novel semiconductor device can be seen obviously.
引文
[1]袁寿财.IGBT场效应半导体功率器件导论[M].北京:科学出版社,2008.1.
[2]周志敏,周纪海,纪爱华.IGBT和IPM及其应用电路[M].人民邮电出版社,2006.3.
[3]王树振,单威,宋玲玲.IGBT绝缘栅双极型晶体管发展简述[J].微处理机MICROPRCCESSORS.2008.4.第2期.pp41-44.
[4]张玉玲.绝缘栅双极晶体管(IGBT)低温特性研究[D].硕士学位论文.中国科学院电工研究所.2005.
[5]B.J.Baliga,M.S.Adler,R.P.Love,P.V.Gray,and N.Zommer.The insulated gate transistor:A new three terminal MOS controlled bipolar power device[J].IEEE Trans.on Electron Devices,Vol.ED-31,1984,No.6,June.
[6]周志敏,周纪海,纪爱华.IGBT和IPM及其应用电路[M].人民邮电出版社,2006.3.
[7]杨晶琦,电力电子器件原理与设计[M].国防工业出版社,1999.6,pp109-125.
[8]王可恕.绝缘栅双极晶体管(IGBT)[J].元器件讲座.西安电子科技大学.
[9]吴滔.绝缘栅双极晶体管(IGBT)的研究与设计[D].硕士学位论文.浙江大学信息学院.2005.
[10]陈利.适用于高低压单片集成电路的LDMOS器件设计与研制[D].硕士学位论文.厦门大学物理系.2006.
[11]张玉微,邓珂.半导体器件计算机模拟技术探索[J].广西工学院学报.2006.12.第17卷.pp23-26.
[12]N.艾罗拉(奥地利).用于VLSI模拟的小尺寸MOS器件模型[M].北京:科学出版社.1999.
[13]成世明.电子器件模拟软件中的MOSFET建模[D].硕士学位论文.湖南大学.2001.12.
[14]杨之廉,申明.超大规模集成电路设计方法学导论(第二版)[M].北京:清华大学出版社.1999.
[15]张振荣,晋明武,王毅平.MCS-51单片机原理及实用技术[M].北京:人民邮电出版社,2000.299-308.
[16]ATLAS User's Manual[M].SILVACO International Inc.2007.
[17]ATHENA User's Manual[M].SILVACO International Inc.2007.
[18]刘恩峰,刘晓彦,韩汝琦.半导体器件模拟技术的研究[J].微电子学.2002.6.第32卷第3期.pp206-209.
[19]李惠军.集成电路工艺仿真系统TSUPREM-Ⅳ[J].半导体技术.2000.6.第25卷第3期.pp34-37.
[20]王志功,景为平,孙玲.集成电路设计技术与工具[M].东南大学出版社.2007.7.
[21]叶立剑,邹勉,杨小慧.IGBT技术发展综述[J].半导体技术.2008.11.第33卷第11期.pp937-941.
[22]Chang HR,Baliga B J.500-V n-channel insulated-gatebipolar transistor with a trench gate structure[J].IEEE Trans Elec Dev.1989,36(9):1824-1829.
[23]E.R.Motto(瑞士).结构上胜过传统IGBT的CSTBT[J].交流技术与电力牵引.2003.3.pp26-29.
[24]三菱电机将携第五代IGBT模块亮相2008慕尼黑上海电子展.三菱电机机电(上海)有限公司新闻稿[Z].2008.1.
[25]E.Motto,et al.Characteristics of a 1200V PT IGBT With Trench Gate and Local Life Time Control[J].IEEE Industry Applications Society 1998.
[26]M.Harada,etal.600v Trench IGBT in Comparison with Planar IGBT[J].International Symposium on Power Semiconductor Devices and ICs 1994.
[27]T.Iida,etal.Low VCE(SAT)IGBT Module by New Structure-Trench[J].PCIM Europe 1994.
[28]Malay Trivedi,Krishna Shenai.Investigation of the Short-Circuit Performance of an IGBT[J].IEEE TRANSACTIONS ON ELECTRON DEVICES,VOL.45,NO.1,JANUARY 1998.
[29]Mutsuhiro Mori,Kazuhiro Oyama,tasiga Arai,Junichi Sakano,Yoshitaka Nishimura,Koutarou Masuda.A Planar-Gate High-Conductivity IGBT(HiGT)With Hole-Barrier Layer[J].IEEE TRANSATIONS ON ELECTRON DEVICES,VOL.54,NO.6,JUNE 2007.
[30]Mutsuhiro Mori,Kzauhiro Oyama,Yasuhiko Kohno,Junichi Sakano,Junpei Uruno,Katsuo Ishizaka,Daisuke Kawase.A Trench-Gate High-Conductivity IGBT(HiGT)With Short-Circuit Capability[J].IEEE TRANSCTIONS ON ELECTRON DEVICES,VOL.54,NO.8,AUGUST 2007.
[31]A.Benmasout,S.Azzopardi,J.C.Martin,E.Woirgard.Trench IGBT failure mechanisms evolution with temperature and gate resistance under various shout-circuit conditions[J].Microelectronics Reliability 47(2007)1730-1734.
[32]Meta-Software Inc.Star_Hspice User's Manual h9901[M].1999.
[33]Sheng K.,Williams B.W.and Finney S.J.A Review of IGBT Models.IEEE Trans.On Power Electronics[J],Vol.15,No.6,2000.pp1250-1266.
[34]H.S.Oh and M.A.E1-Nokali.A new IGBT Behavioral Model[J].Solid-State Electron.Vol.45,Nov.2001,pp2069-2075.
[35]李爱民,何湘宁,钱照明.超快速IGBT电路仿真模型及其参数灵敏度分析[J].电力电子技术,1996年第4期.pp61-66.
[36]梁中华,成燕,孙勇军,葛利俊.一种适合电路仿真的IGBT模型.沈阳工业大学学报[J].2001年11月.第23卷增刊.pp19-21.
[37]欧榕津,王朝英.IGBT的SPICE模型[J].微电子学.1994年4月.第24卷第2期.pp29-32.
[38]王军,张树田,李新林,胡云岩,陈树君.IGBT的电路仿真模型及特性模拟[J].河北科技大学学报.2001年,总第56期.第22卷第1期.pp16-21.
[39]YUAN Shoucai,ZHU Changchun,LIU Junhua.A Novel IGBT Subcircuit Model with Parameters Extraction and Comparison with Measurements.Chinese journal of Electron Devices.Vol.26,No.1,March,2003.pp5-9.
[40]欧榕津,王朝英.IGBT的SPICE模拟.微电子学.第24卷第2期,1994年4月.Pp29-32.
[41]Ruchira Withanage,Noel Shammas,Sarath Tennakoon,Colin Oates,Will Crookes.IGBT PARAMETER EXTRACTION FOR THE HERNER IGBT MODEL[J].pp613-617.
[42]Arora N D,Hauser J R,Roulston D J.Electron and Hole Mobility in Silicon as a Function of Temperature and Concentration[J].IEEE Trans On Electron Device,Feb 1982.29(2).pp292-295.
[43]李本俊,刘选忠,宋俊德,辛德禄.电子电路计算机辅助分析与设计.北京:电子工业出版社,1992.
[44]刘恩科,朱秉升,罗晋生.半导体物理学(第6版).北京:电子工业出版社,2004.
[2]周志敏,周纪海,纪爱华.IGBT和IPM及其应用电路[M].人民邮电出版社,2006.3.
[3]王树振,单威,宋玲玲.IGBT绝缘栅双极型晶体管发展简述[J].微处理机MICROPRCCESSORS.2008.4.第2期.pp41-44.
[4]张玉玲.绝缘栅双极晶体管(IGBT)低温特性研究[D].硕士学位论文.中国科学院电工研究所.2005.
[5]B.J.Baliga,M.S.Adler,R.P.Love,P.V.Gray,and N.Zommer.The insulated gate transistor:A new three terminal MOS controlled bipolar power device[J].IEEE Trans.on Electron Devices,Vol.ED-31,1984,No.6,June.
[6]周志敏,周纪海,纪爱华.IGBT和IPM及其应用电路[M].人民邮电出版社,2006.3.
[7]杨晶琦,电力电子器件原理与设计[M].国防工业出版社,1999.6,pp109-125.
[8]王可恕.绝缘栅双极晶体管(IGBT)[J].元器件讲座.西安电子科技大学.
[9]吴滔.绝缘栅双极晶体管(IGBT)的研究与设计[D].硕士学位论文.浙江大学信息学院.2005.
[10]陈利.适用于高低压单片集成电路的LDMOS器件设计与研制[D].硕士学位论文.厦门大学物理系.2006.
[11]张玉微,邓珂.半导体器件计算机模拟技术探索[J].广西工学院学报.2006.12.第17卷.pp23-26.
[12]N.艾罗拉(奥地利).用于VLSI模拟的小尺寸MOS器件模型[M].北京:科学出版社.1999.
[13]成世明.电子器件模拟软件中的MOSFET建模[D].硕士学位论文.湖南大学.2001.12.
[14]杨之廉,申明.超大规模集成电路设计方法学导论(第二版)[M].北京:清华大学出版社.1999.
[15]张振荣,晋明武,王毅平.MCS-51单片机原理及实用技术[M].北京:人民邮电出版社,2000.299-308.
[16]ATLAS User's Manual[M].SILVACO International Inc.2007.
[17]ATHENA User's Manual[M].SILVACO International Inc.2007.
[18]刘恩峰,刘晓彦,韩汝琦.半导体器件模拟技术的研究[J].微电子学.2002.6.第32卷第3期.pp206-209.
[19]李惠军.集成电路工艺仿真系统TSUPREM-Ⅳ[J].半导体技术.2000.6.第25卷第3期.pp34-37.
[20]王志功,景为平,孙玲.集成电路设计技术与工具[M].东南大学出版社.2007.7.
[21]叶立剑,邹勉,杨小慧.IGBT技术发展综述[J].半导体技术.2008.11.第33卷第11期.pp937-941.
[22]Chang HR,Baliga B J.500-V n-channel insulated-gatebipolar transistor with a trench gate structure[J].IEEE Trans Elec Dev.1989,36(9):1824-1829.
[23]E.R.Motto(瑞士).结构上胜过传统IGBT的CSTBT[J].交流技术与电力牵引.2003.3.pp26-29.
[24]三菱电机将携第五代IGBT模块亮相2008慕尼黑上海电子展.三菱电机机电(上海)有限公司新闻稿[Z].2008.1.
[25]E.Motto,et al.Characteristics of a 1200V PT IGBT With Trench Gate and Local Life Time Control[J].IEEE Industry Applications Society 1998.
[26]M.Harada,etal.600v Trench IGBT in Comparison with Planar IGBT[J].International Symposium on Power Semiconductor Devices and ICs 1994.
[27]T.Iida,etal.Low VCE(SAT)IGBT Module by New Structure-Trench[J].PCIM Europe 1994.
[28]Malay Trivedi,Krishna Shenai.Investigation of the Short-Circuit Performance of an IGBT[J].IEEE TRANSACTIONS ON ELECTRON DEVICES,VOL.45,NO.1,JANUARY 1998.
[29]Mutsuhiro Mori,Kazuhiro Oyama,tasiga Arai,Junichi Sakano,Yoshitaka Nishimura,Koutarou Masuda.A Planar-Gate High-Conductivity IGBT(HiGT)With Hole-Barrier Layer[J].IEEE TRANSATIONS ON ELECTRON DEVICES,VOL.54,NO.6,JUNE 2007.
[30]Mutsuhiro Mori,Kzauhiro Oyama,Yasuhiko Kohno,Junichi Sakano,Junpei Uruno,Katsuo Ishizaka,Daisuke Kawase.A Trench-Gate High-Conductivity IGBT(HiGT)With Short-Circuit Capability[J].IEEE TRANSCTIONS ON ELECTRON DEVICES,VOL.54,NO.8,AUGUST 2007.
[31]A.Benmasout,S.Azzopardi,J.C.Martin,E.Woirgard.Trench IGBT failure mechanisms evolution with temperature and gate resistance under various shout-circuit conditions[J].Microelectronics Reliability 47(2007)1730-1734.
[32]Meta-Software Inc.Star_Hspice User's Manual h9901[M].1999.
[33]Sheng K.,Williams B.W.and Finney S.J.A Review of IGBT Models.IEEE Trans.On Power Electronics[J],Vol.15,No.6,2000.pp1250-1266.
[34]H.S.Oh and M.A.E1-Nokali.A new IGBT Behavioral Model[J].Solid-State Electron.Vol.45,Nov.2001,pp2069-2075.
[35]李爱民,何湘宁,钱照明.超快速IGBT电路仿真模型及其参数灵敏度分析[J].电力电子技术,1996年第4期.pp61-66.
[36]梁中华,成燕,孙勇军,葛利俊.一种适合电路仿真的IGBT模型.沈阳工业大学学报[J].2001年11月.第23卷增刊.pp19-21.
[37]欧榕津,王朝英.IGBT的SPICE模型[J].微电子学.1994年4月.第24卷第2期.pp29-32.
[38]王军,张树田,李新林,胡云岩,陈树君.IGBT的电路仿真模型及特性模拟[J].河北科技大学学报.2001年,总第56期.第22卷第1期.pp16-21.
[39]YUAN Shoucai,ZHU Changchun,LIU Junhua.A Novel IGBT Subcircuit Model with Parameters Extraction and Comparison with Measurements.Chinese journal of Electron Devices.Vol.26,No.1,March,2003.pp5-9.
[40]欧榕津,王朝英.IGBT的SPICE模拟.微电子学.第24卷第2期,1994年4月.Pp29-32.
[41]Ruchira Withanage,Noel Shammas,Sarath Tennakoon,Colin Oates,Will Crookes.IGBT PARAMETER EXTRACTION FOR THE HERNER IGBT MODEL[J].pp613-617.
[42]Arora N D,Hauser J R,Roulston D J.Electron and Hole Mobility in Silicon as a Function of Temperature and Concentration[J].IEEE Trans On Electron Device,Feb 1982.29(2).pp292-295.
[43]李本俊,刘选忠,宋俊德,辛德禄.电子电路计算机辅助分析与设计.北京:电子工业出版社,1992.
[44]刘恩科,朱秉升,罗晋生.半导体物理学(第6版).北京:电子工业出版社,2004.