K波段集成下变频器的设计
摘要
下变频器是微波集成电路接收系统中必不可少的部件。不论是微波通信、雷达、遥控、遥感、还是侦察与电子对抗,以及许多微波测量系统,都必须把微波信号用下变频器降到中低频来进行处理。
至今各种微波系统中几乎都采用了集成电路下变频器,主要是因为集成式下变频器体积小,性能稳定可靠,设计技术成熟,而且结构灵活多样,可以适合各种特殊应用。国外的一些主要军火公司很早就致力于以GaAs技术为基础的MMIC的发展,而且已经取得了相当的成绩,并使之推广到下变频的应用中,国内在这方面也进行了许多卓有成效的工作,但鉴于微波领域的许多研制涉及新理论和制作工艺问题,以及我国目前GaAs技术与国际水平尚有一段不小的差距,电路制作和工艺也有待完善,短期内要实现微波下变频电路的单片集成还不现实。为此,通过混合集成技术实现下变频就成为一种切实可行的方案。
本论文首先对下变频器进行了详细介绍,分析了多种下变频器结构,结合各种结构的优缺点,在此基础上选择合适的结构,利用低成本、高可靠性的微波单片集成电路(MMIC)来实现K波段集成下变频器。根据指标要求,确定具体实现方案,设计无源电路,并合理选择各单元部件,完成对下变频器的设计。
Downconverter is an important part of microwave integrated receiving systems. No matter the use is of microwave communication, radar, distant control and sensor, and detecting and electronic confrontation, and many other microwave measuring systems, we have to transfer the microwave signal to intermediate frequency using a downconverter.
Currently, almost all kinds of microwave systems adapting integrated downconverter, mainly because integrated downconverter occupies the following advantages: less volume, reliable function, mature designing technology, flexible structure, and fitting varied special application. Main oversea chip-supply companies have achieved great success due to their earnest effort with an early beginning on research of GaAs-based MMIC technology. And now these companies have applied this technology to the downconverter. Research institutions and related companies in China also have done much celebrated work. But in microwave field researching staffs have to pay special attention to new theories and manufacturing technics. Due to China's present GaAs technology manufacturing level, there is still a long way to go, especially in the aspects of circuit making and technics. So it is not practical for Chinese researchers achieving monolithic integrated microwave down-converter in a short period of time. Ultimately, the schedule of mixed integrated microwave downconverter comes to the choice.
This paper describes the downconverter specifically in the beginning. In this part, the structures of downconverter are analyzed. Considering the advantages of several kinds of structures, the design finally chooses the proper structure. Low-cost, high-reliability MMIC is preferable. According to the request of the user, the ultimate design schedule is determined, including the passive circuit, and active devices. Finally the design completes.
至今各种微波系统中几乎都采用了集成电路下变频器,主要是因为集成式下变频器体积小,性能稳定可靠,设计技术成熟,而且结构灵活多样,可以适合各种特殊应用。国外的一些主要军火公司很早就致力于以GaAs技术为基础的MMIC的发展,而且已经取得了相当的成绩,并使之推广到下变频的应用中,国内在这方面也进行了许多卓有成效的工作,但鉴于微波领域的许多研制涉及新理论和制作工艺问题,以及我国目前GaAs技术与国际水平尚有一段不小的差距,电路制作和工艺也有待完善,短期内要实现微波下变频电路的单片集成还不现实。为此,通过混合集成技术实现下变频就成为一种切实可行的方案。
本论文首先对下变频器进行了详细介绍,分析了多种下变频器结构,结合各种结构的优缺点,在此基础上选择合适的结构,利用低成本、高可靠性的微波单片集成电路(MMIC)来实现K波段集成下变频器。根据指标要求,确定具体实现方案,设计无源电路,并合理选择各单元部件,完成对下变频器的设计。
Downconverter is an important part of microwave integrated receiving systems. No matter the use is of microwave communication, radar, distant control and sensor, and detecting and electronic confrontation, and many other microwave measuring systems, we have to transfer the microwave signal to intermediate frequency using a downconverter.
Currently, almost all kinds of microwave systems adapting integrated downconverter, mainly because integrated downconverter occupies the following advantages: less volume, reliable function, mature designing technology, flexible structure, and fitting varied special application. Main oversea chip-supply companies have achieved great success due to their earnest effort with an early beginning on research of GaAs-based MMIC technology. And now these companies have applied this technology to the downconverter. Research institutions and related companies in China also have done much celebrated work. But in microwave field researching staffs have to pay special attention to new theories and manufacturing technics. Due to China's present GaAs technology manufacturing level, there is still a long way to go, especially in the aspects of circuit making and technics. So it is not practical for Chinese researchers achieving monolithic integrated microwave down-converter in a short period of time. Ultimately, the schedule of mixed integrated microwave downconverter comes to the choice.
This paper describes the downconverter specifically in the beginning. In this part, the structures of downconverter are analyzed. Considering the advantages of several kinds of structures, the design finally chooses the proper structure. Low-cost, high-reliability MMIC is preferable. According to the request of the user, the ultimate design schedule is determined, including the passive circuit, and active devices. Finally the design completes.
引文
[1]Reinhold Ludwig,Pavel Bretchko.射频电路理论与应用.第3版.北京:科学出版社,2002
[2]Jon B.Hagen.射频电子技术:电路与应用.第1版.北京:机械工业出版社,2005
[3]Richard Brown.射频和微波混合电路:基础、材料和工艺.第1版.北京:电子工业出版社.2006
[4]刘长军,黄卡玛,闫丽萍.射频通信电路设计.第1版.北京:科学出版社,2005
[5]Richard Chi-Hsi Li.射频电路和射频集成电路设计中的关键课题.第1版.北京:高等教育出版社,2005
[6]黄智伟.射频电路设计.第1版.北京:电子工业出版社,2006
[7]范博.射频电路原理与实用电路设计.第3版.北京:机械工业出版社,2006
[8]黄智伟.射频集成电路芯片原理与应用电路设计.第1版.北京:电子工业出版社,2004
[9]雷振亚.射频/微波电路导论.第3版.西安:西安电子科技大学出版社,2005
[10]Rowan Gilmore,Les Besser.现代无线系统射频电路实用设计.第3版.北京:电子工业出版社,2006
[11]高葆新.微波集成电路.第1版.北京:国防工业出版社,2002
[12]闫冯军,夏传浩,洪一.Ka波段微带下变频器.电子工程师,2005,11(6):71-74
[13]喻梦霞,徐军,薛良金.Ka频段上下变频组件.电子工程师,2006,12(5):66-71
[14]胡先进,钱洁.Ka波段低噪声下变频器的设计.电子工程师,2007,3(4):48-54
[15]Li Ming,Li Xingguo.Novel Ka-band low-noise down-converter assembly.Journal of Southeast University(English Edition),2006,22(4):461-464
[16]Junghyun Kim.High-performance V-band cascode HEMT mixer and downconverter module.Microwave Theory and Techniques,2003,51(3):805-810
[17]Jin-Cheol Jeong.Development of Ku-band Receiver/Downconverter for satellite transponders.Microwave Symposium Digest,2005,4:1257-1260
[18]Hoffmann M,Ludwig F,Schlarb H,Simrock S.Multichannel downconverter for the next generation RF field control for VUV-and X-ray free electron lasers.Particle Accelerator Conference,2007,25:2071-2073
[19]Chang K.W.A W-band monolithic pseudomorphic InGaAs HEMT downconverter. Microwave and Millimeter-Wave Monolithic Circuits Symposium.Digest of Papers.1991,12:55-58
[20]Saito T,Hidaka N,Ono K,Ohashi Y,Shimura T.60-GHz MMIC image-rejection downconverter using InGaP/InGaAs HEMT.Technical Digest.1995,29:222-225
[21]Suzuki K.Noise figure of HTS JJ MMIC downconverter at 12 GHz.Microwave Symposium Digest.1993,3:1429-1432
[22]Berenz.J,LaCon M.Aust,M.44 GHz monolithic HEMT downconverter.Gallium Arsenide Integrated Circuit(GaAs IC)Symposium.1990,12:189-192
[23]Linggajaya K.A new active polyphase filter for wideband image reject downconverter.Semiconductor Electronics.2002,19:213-217
[24]Bacon,P.Olsen,E.Cole,B.Tajima,Y.Kaczman,D.A dual-channel Ku-band DBS downconverter.Gallium Arsenide Integrated Circuit(GaAs IC)Symposium.1993,15:233-236
[25]Chang K.W,Wang H,Ton T.N.A W-band image-rejection downconverter.Microwave Theory and Techniques.1992,40:2332- 2336
[26]Yoshimasu T,Sakuno K,Matsumoto N.A low-current Ku-band GaAs monolithic image rejection down-converter.Solid-State Circuits.1992,27:1448 - 1451
[27]Jeiyoung Lee,Shin H,Park C.H,Kim N.Y.A low-power Ku-band downconverter in InGaP-GaAs HBT technology.Microwave and Wireless Components Letters.2005,15:193-195
[28]Kodkani R.M,Larson L.E.A 24-GHz CMOS Direct-Conversion Sub-Harmonic Downconverter.Radio Frequency Integrated Circuits(RFIC)Symposium.2007,3:485-488
[29]Stadius K,Malinen A,Jarvio P,Halonen K,Paatsila P.A cable-modem RF tuner.Solid-State Circuits Conference.2003,29:421-424
[30]Trantanella C,Blount P,Shifrin M.A GaAs +3V low noise integrated downconverter for C-band applications.Gallium Arsenide Integrated Circuit(GaAs IC)Symposium.1999,21:199-202
[31]Guan-Wu Wang.A low cost DBS low noise block downconverter with a DR stabilized MESFET self-oscillating mixer.Microwave Symposium Digest.1994,3:1447-1450
[32]Sakuno K.A miniature low current GaAs MMIC downconverter for Ku-band broadcast satellite applications.Microwave and Millimeter-Wave Monolithic Circuits.1992,10:101-104
[33]Brady V,Hsu T.-I,Reeves R.Vermeulen,M.Development of a monolithic FET Ka-band single side band upconverter and image reject downconverter. Gallium Arsenide Integrated Circuit (GaAs IC). 1989,12:189-192
[34] Kodkani R. M, Larson L. E. A 24-GHz CMOS Passive Subharmonic Mixer and Downconverter for Zero-IF Applications. Microwave Theory and Techniques, IEEE Transactions. 2008, 56:1247-1256
[35] Tasic A, Lim S.-T, Serdijn W. A, Long J. R. Design of Adaptive Multimode RF Front-End Circuits. Solid-State Circuits, IEEE Journal. 2007, 42:313-322
[36] Long J.R. A low-voltage 5.1-5.8-GHz image-reject downconverter RF IC. Solid-State Circuits, IEEE Journal. 2000, 35:1320-1328
[37] Sheng-Che Tseng. Low-Voltage GalnP/GaAs HBT Wideband Gilbert Downconverter Using Transformer RF Balun. Microwave Symposium, IEEE/MTT-S International, 2007, 16:2149-2152
[38] Campbell C.F, Beall J. M. Design and performance of a highly integrated wideband active downconverter MMIC. Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers. 2001, 5:245-248
[39] Campbell, C. F. A wideband pHEMT downconverter MMIC for satellite communication systems. Microwave Symposium Digest, IEEE MTT-S International, 1998, 1:55-59
[40] Hutchinson C, Frank M, Negus K. Silicon bipolar 12 GHz downconverter for satellite receivers. Bipolar/BiCMOS Circuits and Technology Meeting. 1995:198-201
[41] Strutz S. J, Williams K. J. An 8-18-GHz all-optical microwave downconverter with channelization. Microwave Theory and Techniques, IEEE Transactions. 2001, 49:1992-1995
[42] Vitali S, Franchi E, Gnudi A. RF I/Q Downconverter With Gain/Phase Calibration. Circuits and Systems II: Express Briefs, IEEE Transactions. 2007, 54:367-371
[43] Subramanian V, Van-Hoang Do, Keusgen W, Boeck G. 60 GHz SiGe HBT downconversion mixer. Microwave integrated circuit conference, Eumic Digest. 2007:76-79
[44] Jae-Ho Yoon, Nam-Young Kim. A New Harmonic Noise Frequency Filtering VCO and Mixer Co-design. European Microwave Integrated Circuits Conference. 2006, 1:352-355
[45] Wu Fengshun, Hu Yanxiang, Wu Yiping, An Bing, Zhang Jinsong. A study of thermosonic gold wire bonding onto silver plated copper pad. Electronic Packaging Technology. 2005, 6:372-376
[46]Winchell V.Ⅱ,Berg H.Enhancing Ultrasonic Bond Development.Components,Hybrids,and Manufacturing Technology,IEEE Transactions.1978,1:211-219
[47]Sato R,Matsuda S,Kata K.Inner bump bonding technology for CSP.IEMT/IMC Symposium.1998,2:88-93
[48]Kiwon Lee,Hyoung Joon Kim,Kyung Wook Paik.Ultrasonic Anisotropic Conductive Films(ACFs)Bonding of Flexible Substrates on Organic Rigid Boards at Room Temperature.Electronic Components and Technology Conference.2007,4:480-486
[2]Jon B.Hagen.射频电子技术:电路与应用.第1版.北京:机械工业出版社,2005
[3]Richard Brown.射频和微波混合电路:基础、材料和工艺.第1版.北京:电子工业出版社.2006
[4]刘长军,黄卡玛,闫丽萍.射频通信电路设计.第1版.北京:科学出版社,2005
[5]Richard Chi-Hsi Li.射频电路和射频集成电路设计中的关键课题.第1版.北京:高等教育出版社,2005
[6]黄智伟.射频电路设计.第1版.北京:电子工业出版社,2006
[7]范博.射频电路原理与实用电路设计.第3版.北京:机械工业出版社,2006
[8]黄智伟.射频集成电路芯片原理与应用电路设计.第1版.北京:电子工业出版社,2004
[9]雷振亚.射频/微波电路导论.第3版.西安:西安电子科技大学出版社,2005
[10]Rowan Gilmore,Les Besser.现代无线系统射频电路实用设计.第3版.北京:电子工业出版社,2006
[11]高葆新.微波集成电路.第1版.北京:国防工业出版社,2002
[12]闫冯军,夏传浩,洪一.Ka波段微带下变频器.电子工程师,2005,11(6):71-74
[13]喻梦霞,徐军,薛良金.Ka频段上下变频组件.电子工程师,2006,12(5):66-71
[14]胡先进,钱洁.Ka波段低噪声下变频器的设计.电子工程师,2007,3(4):48-54
[15]Li Ming,Li Xingguo.Novel Ka-band low-noise down-converter assembly.Journal of Southeast University(English Edition),2006,22(4):461-464
[16]Junghyun Kim.High-performance V-band cascode HEMT mixer and downconverter module.Microwave Theory and Techniques,2003,51(3):805-810
[17]Jin-Cheol Jeong.Development of Ku-band Receiver/Downconverter for satellite transponders.Microwave Symposium Digest,2005,4:1257-1260
[18]Hoffmann M,Ludwig F,Schlarb H,Simrock S.Multichannel downconverter for the next generation RF field control for VUV-and X-ray free electron lasers.Particle Accelerator Conference,2007,25:2071-2073
[19]Chang K.W.A W-band monolithic pseudomorphic InGaAs HEMT downconverter. Microwave and Millimeter-Wave Monolithic Circuits Symposium.Digest of Papers.1991,12:55-58
[20]Saito T,Hidaka N,Ono K,Ohashi Y,Shimura T.60-GHz MMIC image-rejection downconverter using InGaP/InGaAs HEMT.Technical Digest.1995,29:222-225
[21]Suzuki K.Noise figure of HTS JJ MMIC downconverter at 12 GHz.Microwave Symposium Digest.1993,3:1429-1432
[22]Berenz.J,LaCon M.Aust,M.44 GHz monolithic HEMT downconverter.Gallium Arsenide Integrated Circuit(GaAs IC)Symposium.1990,12:189-192
[23]Linggajaya K.A new active polyphase filter for wideband image reject downconverter.Semiconductor Electronics.2002,19:213-217
[24]Bacon,P.Olsen,E.Cole,B.Tajima,Y.Kaczman,D.A dual-channel Ku-band DBS downconverter.Gallium Arsenide Integrated Circuit(GaAs IC)Symposium.1993,15:233-236
[25]Chang K.W,Wang H,Ton T.N.A W-band image-rejection downconverter.Microwave Theory and Techniques.1992,40:2332- 2336
[26]Yoshimasu T,Sakuno K,Matsumoto N.A low-current Ku-band GaAs monolithic image rejection down-converter.Solid-State Circuits.1992,27:1448 - 1451
[27]Jeiyoung Lee,Shin H,Park C.H,Kim N.Y.A low-power Ku-band downconverter in InGaP-GaAs HBT technology.Microwave and Wireless Components Letters.2005,15:193-195
[28]Kodkani R.M,Larson L.E.A 24-GHz CMOS Direct-Conversion Sub-Harmonic Downconverter.Radio Frequency Integrated Circuits(RFIC)Symposium.2007,3:485-488
[29]Stadius K,Malinen A,Jarvio P,Halonen K,Paatsila P.A cable-modem RF tuner.Solid-State Circuits Conference.2003,29:421-424
[30]Trantanella C,Blount P,Shifrin M.A GaAs +3V low noise integrated downconverter for C-band applications.Gallium Arsenide Integrated Circuit(GaAs IC)Symposium.1999,21:199-202
[31]Guan-Wu Wang.A low cost DBS low noise block downconverter with a DR stabilized MESFET self-oscillating mixer.Microwave Symposium Digest.1994,3:1447-1450
[32]Sakuno K.A miniature low current GaAs MMIC downconverter for Ku-band broadcast satellite applications.Microwave and Millimeter-Wave Monolithic Circuits.1992,10:101-104
[33]Brady V,Hsu T.-I,Reeves R.Vermeulen,M.Development of a monolithic FET Ka-band single side band upconverter and image reject downconverter. Gallium Arsenide Integrated Circuit (GaAs IC). 1989,12:189-192
[34] Kodkani R. M, Larson L. E. A 24-GHz CMOS Passive Subharmonic Mixer and Downconverter for Zero-IF Applications. Microwave Theory and Techniques, IEEE Transactions. 2008, 56:1247-1256
[35] Tasic A, Lim S.-T, Serdijn W. A, Long J. R. Design of Adaptive Multimode RF Front-End Circuits. Solid-State Circuits, IEEE Journal. 2007, 42:313-322
[36] Long J.R. A low-voltage 5.1-5.8-GHz image-reject downconverter RF IC. Solid-State Circuits, IEEE Journal. 2000, 35:1320-1328
[37] Sheng-Che Tseng. Low-Voltage GalnP/GaAs HBT Wideband Gilbert Downconverter Using Transformer RF Balun. Microwave Symposium, IEEE/MTT-S International, 2007, 16:2149-2152
[38] Campbell C.F, Beall J. M. Design and performance of a highly integrated wideband active downconverter MMIC. Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers. 2001, 5:245-248
[39] Campbell, C. F. A wideband pHEMT downconverter MMIC for satellite communication systems. Microwave Symposium Digest, IEEE MTT-S International, 1998, 1:55-59
[40] Hutchinson C, Frank M, Negus K. Silicon bipolar 12 GHz downconverter for satellite receivers. Bipolar/BiCMOS Circuits and Technology Meeting. 1995:198-201
[41] Strutz S. J, Williams K. J. An 8-18-GHz all-optical microwave downconverter with channelization. Microwave Theory and Techniques, IEEE Transactions. 2001, 49:1992-1995
[42] Vitali S, Franchi E, Gnudi A. RF I/Q Downconverter With Gain/Phase Calibration. Circuits and Systems II: Express Briefs, IEEE Transactions. 2007, 54:367-371
[43] Subramanian V, Van-Hoang Do, Keusgen W, Boeck G. 60 GHz SiGe HBT downconversion mixer. Microwave integrated circuit conference, Eumic Digest. 2007:76-79
[44] Jae-Ho Yoon, Nam-Young Kim. A New Harmonic Noise Frequency Filtering VCO and Mixer Co-design. European Microwave Integrated Circuits Conference. 2006, 1:352-355
[45] Wu Fengshun, Hu Yanxiang, Wu Yiping, An Bing, Zhang Jinsong. A study of thermosonic gold wire bonding onto silver plated copper pad. Electronic Packaging Technology. 2005, 6:372-376
[46]Winchell V.Ⅱ,Berg H.Enhancing Ultrasonic Bond Development.Components,Hybrids,and Manufacturing Technology,IEEE Transactions.1978,1:211-219
[47]Sato R,Matsuda S,Kata K.Inner bump bonding technology for CSP.IEMT/IMC Symposium.1998,2:88-93
[48]Kiwon Lee,Hyoung Joon Kim,Kyung Wook Paik.Ultrasonic Anisotropic Conductive Films(ACFs)Bonding of Flexible Substrates on Organic Rigid Boards at Room Temperature.Electronic Components and Technology Conference.2007,4:480-486