电场对铁磁/铁电异质结构磁性及输运性质调控的研究
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摘要
近年来，随着信息存储技术的快速发展，对具有高密度、高速度、非挥发、低能耗的新概念随机存储器的研究，是一个意义重大并颇具难度的课题。其中，用电场替代磁场或电流来控制磁性以实现信息的高速度、低能耗写入是至关重要的。为了实现这个目标，一个可行并有效的方法就是利用多铁性材料及其磁电耦合效应。然而目前室温下具有较好的磁电耦合性能的单相多铁性材料很少，其磁电耦合系数也比较小；而在铁磁/铁电复合结构中，具有丰富的材料可选择和较大磁电耦合效应，因此有着较好的应用前景，而被广泛地研究。本论文以Co_(40)Fe_(40)B_(20)/Pb(Mg_(1/3_Nb_(2/3))_(0.7)Ti_(0.3)O_3铁磁/铁电复合多铁异质结构为研究对象，围绕利用电场来调控磁性和磁电阻的课题展开，主要内容体现在以下两个方面：
利用超高真空磁控溅射系统在Pb(Mg_(1/3_Nb_(2/3))_(0.7)Ti_(0.3)O_3单晶衬底上生长非晶Co_(40)Fe_(40)B_(20)薄膜，制备成为多铁异质结构，并用原位加电场的测量磁性技术进行研究。研究发现，在(001)取向的样品中，室温下磁性随电场的变化行为呈现类似铁电Loop的形式，这与前人所报道的以应力为媒介的铁磁/铁电复合结构中所得到的Butterfly形状的调控行为不同。进一步深入而系统的实验研究与理论分析表明：铁电畴的109°翻转与无磁晶各向异性的铁磁薄膜的组合，导致了实验中观察到的这种非挥发的电调控磁性的行为——这是以应力为媒介的电磁调控体系中的一种新机制。此外，由于该结果中磁调控的状态不会随电场的撤销而消失，体现出非挥发的特性，因而具有应用价值。
另一方面，由于面内应变的各向异性，我们在(110)取向的样品上，发现了更大的室温下电场调控磁性的能力，进一步研究表明铁磁薄膜的易磁化轴在电场的作用下产生了90°的旋转。利用这种大的电场调控磁性效应的结果，在样品上进一步制备自旋阀结构，进行巨磁电阻的测量，实现了室温下电场控制磁性进而控制磁电阻的结果，这对于电写/磁读式新一代高性能信息存储器件的实现，具有参考价值。
With the fast development of information storage, exploiting new concepts fordense, fast, and non-volatile random access memory with reduced energyconsumption is a significant and challenging task. To realize this goal, electric-fieldcontrol of magnetism is crucial. A promising way to control magnetism via electricfields is using the converse magnetoelectric effect, which permits control ofmagnetism with electric fields rather than with electric currents or with magneticfields. In that context, multiferroic materials which exhibit simultaneous magneticand ferroelectric orders with coupling between them are among the top candidates forrealizing electric-field control of magnetism. However, single-phase multiferroicmaterials are rare at room temperature and the converse magnetoelectric effects aretypically also too small to be useful. The use of artificial two-phase systemsconsisting of ferromagnetic and ferroelectric materials, especially various roomtemperature ferromagnetic (FM) and ferroelectric (FE) materials, serves as analternative approach to achieve electric-field control of magnetism and has beenwidely studied in recent years. In this thesis, we have investigated the electric-fieldcontrol of magnetization as well as the spin dependent transportation based on aCo_(40)Fe_(40)B_(20)(CoFeB)/Pb(Mg_(1/3_Nb_(2/3))_(0.7)Ti_(0.3)O_3(PMN-PT) FM/FE heterostructure. Themain work can be divided to two parts as follows:
Multiferroic samples were fabricated by depositing amorphous CoFeB films ontop of PMN-PT substrates with a magnetron sputtering system and the electric-fieldcontrol of magnetization was performed by magnetic property measurement systemwith in situ electric fields. We have found that the magnetization of CoFeB film onthe (001) oriented PMN-PT exhibits a giant loop-like response to electric field atroom temperature instead of the butterfly-like behavior commonly observed in thestrain-mediated FM-FE structures. Through systematic experimental investigationand theoretical analyse, it was demonstrated that the loop-like magnetization responseto electric field originates from the combined action of109°ferroelastic domainswitching in PMN-PT and absence of magnetocrystalline anisotropy in CoFeB, which is a new story for the strain-mediated FM-FE two phase systerm. What’s more, thislarge electric-field control of magnetization is tunable and non-volatile, which issignificant for applications.
In another aspect, we have found even larger electric-field control ofmagnetization of CoFeB on the (110) oriented PMN-PT due to the in-plane strainanisotropy. Further experiments have demonstrated that the easy axis of CoFeB canrotate90degree at electric fields. Based on this large converse magnetoelectriceffect, spin-valves were fabricated on top of (110) oriented PMN-PT. It was shownthat both of the magnetization and the giant magnetoresistance of the structure can betuned by electric field at room temperature, which is very important for applications,especially in terms of the electric-writing and magnetic-reading random accessmemories.
利用超高真空磁控溅射系统在Pb(Mg_(1/3_Nb_(2/3))_(0.7)Ti_(0.3)O_3单晶衬底上生长非晶Co_(40)Fe_(40)B_(20)薄膜，制备成为多铁异质结构，并用原位加电场的测量磁性技术进行研究。研究发现，在(001)取向的样品中，室温下磁性随电场的变化行为呈现类似铁电Loop的形式，这与前人所报道的以应力为媒介的铁磁/铁电复合结构中所得到的Butterfly形状的调控行为不同。进一步深入而系统的实验研究与理论分析表明：铁电畴的109°翻转与无磁晶各向异性的铁磁薄膜的组合，导致了实验中观察到的这种非挥发的电调控磁性的行为——这是以应力为媒介的电磁调控体系中的一种新机制。此外，由于该结果中磁调控的状态不会随电场的撤销而消失，体现出非挥发的特性，因而具有应用价值。
另一方面，由于面内应变的各向异性，我们在(110)取向的样品上，发现了更大的室温下电场调控磁性的能力，进一步研究表明铁磁薄膜的易磁化轴在电场的作用下产生了90°的旋转。利用这种大的电场调控磁性效应的结果，在样品上进一步制备自旋阀结构，进行巨磁电阻的测量，实现了室温下电场控制磁性进而控制磁电阻的结果，这对于电写/磁读式新一代高性能信息存储器件的实现，具有参考价值。
With the fast development of information storage, exploiting new concepts fordense, fast, and non-volatile random access memory with reduced energyconsumption is a significant and challenging task. To realize this goal, electric-fieldcontrol of magnetism is crucial. A promising way to control magnetism via electricfields is using the converse magnetoelectric effect, which permits control ofmagnetism with electric fields rather than with electric currents or with magneticfields. In that context, multiferroic materials which exhibit simultaneous magneticand ferroelectric orders with coupling between them are among the top candidates forrealizing electric-field control of magnetism. However, single-phase multiferroicmaterials are rare at room temperature and the converse magnetoelectric effects aretypically also too small to be useful. The use of artificial two-phase systemsconsisting of ferromagnetic and ferroelectric materials, especially various roomtemperature ferromagnetic (FM) and ferroelectric (FE) materials, serves as analternative approach to achieve electric-field control of magnetism and has beenwidely studied in recent years. In this thesis, we have investigated the electric-fieldcontrol of magnetization as well as the spin dependent transportation based on aCo_(40)Fe_(40)B_(20)(CoFeB)/Pb(Mg_(1/3_Nb_(2/3))_(0.7)Ti_(0.3)O_3(PMN-PT) FM/FE heterostructure. Themain work can be divided to two parts as follows:
Multiferroic samples were fabricated by depositing amorphous CoFeB films ontop of PMN-PT substrates with a magnetron sputtering system and the electric-fieldcontrol of magnetization was performed by magnetic property measurement systemwith in situ electric fields. We have found that the magnetization of CoFeB film onthe (001) oriented PMN-PT exhibits a giant loop-like response to electric field atroom temperature instead of the butterfly-like behavior commonly observed in thestrain-mediated FM-FE structures. Through systematic experimental investigationand theoretical analyse, it was demonstrated that the loop-like magnetization responseto electric field originates from the combined action of109°ferroelastic domainswitching in PMN-PT and absence of magnetocrystalline anisotropy in CoFeB, which is a new story for the strain-mediated FM-FE two phase systerm. What’s more, thislarge electric-field control of magnetization is tunable and non-volatile, which issignificant for applications.
In another aspect, we have found even larger electric-field control ofmagnetization of CoFeB on the (110) oriented PMN-PT due to the in-plane strainanisotropy. Further experiments have demonstrated that the easy axis of CoFeB canrotate90degree at electric fields. Based on this large converse magnetoelectriceffect, spin-valves were fabricated on top of (110) oriented PMN-PT. It was shownthat both of the magnetization and the giant magnetoresistance of the structure can betuned by electric field at room temperature, which is very important for applications,especially in terms of the electric-writing and magnetic-reading random accessmemories.
引文
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