3毫米稳频脉冲雪崩管振荡器研究
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摘要
毫米波技术是近几十年来，特别是近二十年来取得重大突破的一项新技术。毫米波理论及其技术的日益成熟，促进并扩展了毫米波的应用领域，不仅可以解决当前困扰人们的频谱资源拥挤的问题，而且也为我们开拓更高频段的频谱资源提供了理论和技术上的支持。
随着人们对毫米波频段开发的深入，毫米波固态振荡器作为毫米波通信和雷达的频率源，其频率稳定度是重要指标。因此研究振荡器的频率稳定度是重要课题。
本文介绍用于机载3mm非相参雷达发射机激励器的稳频脉冲雪崩管振荡器的设计及调试结果。该振荡器工作在-55℃～+70℃的环境温度下，输出功率大于1W。其输出经两级注锁放大，发射机输出功率大于10W。本课题的主要任务是解决3毫米振荡器在环境温度变化条件下功率和频率的温度稳定性问题。
为此，在广泛查阅中外文献资料的基础上，对雪崩二极管振荡器的频率稳定度采取了如下措施：利用高Q谐振腔提高频率稳定度；利用不同线胀系数的材料对谐振腔进行温度补偿，提高温度稳定性；用顶部斜率可调的脉冲电流调制器给雪崩管馈电，对振荡器脉内频率变化进行温度补偿。
本文第一章主要介绍了3毫米波段固态振荡器的发展及现状，指出研制高稳定度振荡器的必要性；第二章重点介绍了雪崩二极管器件的物理特性及产生雪崩振荡的机理；第三章阐述雪崩管主振器的工作原理及设计方法；第四章首先讨论振荡器的频率稳定性问题与稳频措施，然后在此基础上重点阐述高Q稳频腔的工作原理及其设计方法，讨论了脉冲雪崩二极管振荡器的脉内电流温度补偿；第五章介绍雪崩二极管振荡器的调试方法及结果。
调试和实验的结果表明：3毫米稳频脉冲雪崩二极管振荡器具有输出功率大，频率稳定度高等优点，满足整机要求。
The millimeter-wave technology is near and several decades to come, and especially obtain a new technology of the important breakthrough in the last two decades.Millimeter -wave theories and its technology of increasingly mature, promote and expand front that the millimeter-wave applied realm, can not only resolve the spectrum source problems that hustle and perplex the people, and also expand the higher spectrum source to provide the theories and technology with the support for us.
With developing deep of millimeter-wave frequency band, the frequency stability on millimeter-wave solid-state oscillator is an important guideline.Therefore ,the frequency stability of the research for oscillator is important thesis.
this text introduces the steady frequency pulsed IMPATT oscillator used for the helicopter,used for transmitter of 3 mm non-coherent radar ,and take into the design,the debugging and results of the oscillator .The oscillator works during the -55癈 ~+70癈,and its output power is larger than IW.Its output signal passes through two stages injection-locked amplification, and the output power of the transmitter is larger than 10W. The main task of this thesis resolves the stability of the power and frequency with the variation of environment temperature for 3 mm-wave oscillator.
Therefore, with extensively checking the foundation of the Chinese and Foreign cultural data,we adopt the following measurements to achieve the frequency stability for the IMPATT oscillator.Making use of the high Q resonant cavity to increase the frequency stability;making use of the material of the different thermal swell coefficient to proceed the temperature compensation of resonant cavity, and to increase the temperature stability;using the adjustable pulsed current modulator to provide the IMPATT diode , to compensate the frequency variation of the oscillator during intrapulse.
In chapter one ,the survey of the development and present condition for 3 mm frequency band solid-state oscillator is given, and the necessity to study oscillators with high frequency stability;In chapter two,the physics characteristic of IMP ATT diode and the work principle of IMPATT diode oscillator are introduced;In chapter three,the work principle and the, method of the design on IMPATT diode oscillator are given;In chapter four,firstly discussing the frequency stability and the means to stable frequency of oscillator,then the work principle and the method of design for high Q resonant cavity are given,finally, discussing the current temperature compensation of IMPATT diode oscillator during intrapulse; In chapter five,the debugging means and the measurement results of oscillator are introduced.
The debugging and experimental results show that 3 mm-wave steady frequency pulsed IMPATT diode oscillator can not only output the high power,and alse have an advantage of high frequency stability etc.The oscillator may satisfy the system requirement.
随着人们对毫米波频段开发的深入，毫米波固态振荡器作为毫米波通信和雷达的频率源，其频率稳定度是重要指标。因此研究振荡器的频率稳定度是重要课题。
本文介绍用于机载3mm非相参雷达发射机激励器的稳频脉冲雪崩管振荡器的设计及调试结果。该振荡器工作在-55℃～+70℃的环境温度下，输出功率大于1W。其输出经两级注锁放大，发射机输出功率大于10W。本课题的主要任务是解决3毫米振荡器在环境温度变化条件下功率和频率的温度稳定性问题。
为此，在广泛查阅中外文献资料的基础上，对雪崩二极管振荡器的频率稳定度采取了如下措施：利用高Q谐振腔提高频率稳定度；利用不同线胀系数的材料对谐振腔进行温度补偿，提高温度稳定性；用顶部斜率可调的脉冲电流调制器给雪崩管馈电，对振荡器脉内频率变化进行温度补偿。
本文第一章主要介绍了3毫米波段固态振荡器的发展及现状，指出研制高稳定度振荡器的必要性；第二章重点介绍了雪崩二极管器件的物理特性及产生雪崩振荡的机理；第三章阐述雪崩管主振器的工作原理及设计方法；第四章首先讨论振荡器的频率稳定性问题与稳频措施，然后在此基础上重点阐述高Q稳频腔的工作原理及其设计方法，讨论了脉冲雪崩二极管振荡器的脉内电流温度补偿；第五章介绍雪崩二极管振荡器的调试方法及结果。
调试和实验的结果表明：3毫米稳频脉冲雪崩二极管振荡器具有输出功率大，频率稳定度高等优点，满足整机要求。
The millimeter-wave technology is near and several decades to come, and especially obtain a new technology of the important breakthrough in the last two decades.Millimeter -wave theories and its technology of increasingly mature, promote and expand front that the millimeter-wave applied realm, can not only resolve the spectrum source problems that hustle and perplex the people, and also expand the higher spectrum source to provide the theories and technology with the support for us.
With developing deep of millimeter-wave frequency band, the frequency stability on millimeter-wave solid-state oscillator is an important guideline.Therefore ,the frequency stability of the research for oscillator is important thesis.
this text introduces the steady frequency pulsed IMPATT oscillator used for the helicopter,used for transmitter of 3 mm non-coherent radar ,and take into the design,the debugging and results of the oscillator .The oscillator works during the -55癈 ~+70癈,and its output power is larger than IW.Its output signal passes through two stages injection-locked amplification, and the output power of the transmitter is larger than 10W. The main task of this thesis resolves the stability of the power and frequency with the variation of environment temperature for 3 mm-wave oscillator.
Therefore, with extensively checking the foundation of the Chinese and Foreign cultural data,we adopt the following measurements to achieve the frequency stability for the IMPATT oscillator.Making use of the high Q resonant cavity to increase the frequency stability;making use of the material of the different thermal swell coefficient to proceed the temperature compensation of resonant cavity, and to increase the temperature stability;using the adjustable pulsed current modulator to provide the IMPATT diode , to compensate the frequency variation of the oscillator during intrapulse.
In chapter one ,the survey of the development and present condition for 3 mm frequency band solid-state oscillator is given, and the necessity to study oscillators with high frequency stability;In chapter two,the physics characteristic of IMP ATT diode and the work principle of IMPATT diode oscillator are introduced;In chapter three,the work principle and the, method of the design on IMPATT diode oscillator are given;In chapter four,firstly discussing the frequency stability and the means to stable frequency of oscillator,then the work principle and the method of design for high Q resonant cavity are given,finally, discussing the current temperature compensation of IMPATT diode oscillator during intrapulse; In chapter five,the debugging means and the measurement results of oscillator are introduced.
The debugging and experimental results show that 3 mm-wave steady frequency pulsed IMPATT diode oscillator can not only output the high power,and alse have an advantage of high frequency stability etc.The oscillator may satisfy the system requirement.
引文
[1] P. Bhartia,I.J.Bahl. Millimeter Wave engineering and application. Wiley, 1984.
[2] 薛良金．毫米波工程基础．国防工业出版社，1998．
[3] 张国良．日本毫米波技术综述．雷达与对抗，1996(4)：53-61．
[4] 阮成礼．毫米波理论与技术，电子科技大学出版社，2001年．
[5] 高葆新主编．微波集成电路．国防工业出版社，1995年．
[6] 杨志敏．毫米波新技术．雷达与对抗，96(1)：1-4．
[7] 郑东．几种微波毫米波固态器件的动向．第五届全国毫米波、亚毫米波学术会议论文集，青岛，1991：10-17．
[8] 顾其诤等编著．微波集成电路设计．
[9] 王蕴仪等．微波器件与电路．江苏科学技术出版社，1981年。
[10] 黄香馥等．微波固体电路．电子科技大学出版社，1990年．
[11] U.C Ray etc. A Practical Approach to the Design of a W-Band Impatt Oscillator. Microwave Journal, 1989.No. 11 ,pp. 157-162.
[12] U.C.Ray, A.K.Gupta. Intrapulse Frequency Variation in a W-Band pulse IMPATT Diode,Microwave Journal,April 1994,pp238-244.
[13] Christophe Dalle etc. Flat doping profile double-drift silicon Impatt for reliable CW high-power high-efficiency generation in the 94-GHz window. IEEE Trans. Vol.37,No. 1,January 1990:227-236.
[14] T.T. Fong etc. Circuit characterization of V-band IMPATT oscillators and amplifiers. IEEE Trans. Vol.MTT-24,No. 11,November 1976:752-758.
[15] L.V. Kasatkin and N.F. Karushkin. Stabilization of RF parameters of injection-locked pulsed IMPATT oscillators. Microwave Journal September 2000:172-180.
[16] 唐小宏等．3mm波相参脉冲放大链．电子科技大学学报．1998年8月，第28卷，第4期，378-382．
[17] 喻光正等．直升机3mm防撞雷达．电讯技术，1999，特刊，22(1)：19-26．
[18] 孙鉴．直升机毫米波防撞雷达．电讯技术，1991，增刊2，16-26．
[19] 徐永胜．国外直升机障碍物回避雷达简述．电子十所内部资料，1990：35-39．
[20] 甘体国．毫米波雷达频率源的频率稳定问题．电讯技术，2000年特刊4,48-56．
[21] Joel W. Gannett and Leon O.Chua. A nonlinear circuit model for IMPATT diodes. IEEE Trans. On circuit and systems,vol. Cas-25,No.5,May1978:299-308.
[22] Bevan D. Bates. A comparison of IMPATT oscillator power and frequency above 100 GHz with results derived from theoretical models. IEEE Trans.vol. MTT-32,No. 10,October 1984:1394-1398.
[23] 甘本袯，吴万春．现代微波滤波器的结构与设计．科学出版社，1973年．
[24] 黎安尧编．微波技术基础．电子科技大学内部讲义，1983年，
[25] 柳维君编．微波技术基础．电子科技大学出版社，1989年．
[26] 林为干编．微波理论与技术．科学出版社，1979年．
[2] 薛良金．毫米波工程基础．国防工业出版社，1998．
[3] 张国良．日本毫米波技术综述．雷达与对抗，1996(4)：53-61．
[4] 阮成礼．毫米波理论与技术，电子科技大学出版社，2001年．
[5] 高葆新主编．微波集成电路．国防工业出版社，1995年．
[6] 杨志敏．毫米波新技术．雷达与对抗，96(1)：1-4．
[7] 郑东．几种微波毫米波固态器件的动向．第五届全国毫米波、亚毫米波学术会议论文集，青岛，1991：10-17．
[8] 顾其诤等编著．微波集成电路设计．
[9] 王蕴仪等．微波器件与电路．江苏科学技术出版社，1981年。
[10] 黄香馥等．微波固体电路．电子科技大学出版社，1990年．
[11] U.C Ray etc. A Practical Approach to the Design of a W-Band Impatt Oscillator. Microwave Journal, 1989.No. 11 ,pp. 157-162.
[12] U.C.Ray, A.K.Gupta. Intrapulse Frequency Variation in a W-Band pulse IMPATT Diode,Microwave Journal,April 1994,pp238-244.
[13] Christophe Dalle etc. Flat doping profile double-drift silicon Impatt for reliable CW high-power high-efficiency generation in the 94-GHz window. IEEE Trans. Vol.37,No. 1,January 1990:227-236.
[14] T.T. Fong etc. Circuit characterization of V-band IMPATT oscillators and amplifiers. IEEE Trans. Vol.MTT-24,No. 11,November 1976:752-758.
[15] L.V. Kasatkin and N.F. Karushkin. Stabilization of RF parameters of injection-locked pulsed IMPATT oscillators. Microwave Journal September 2000:172-180.
[16] 唐小宏等．3mm波相参脉冲放大链．电子科技大学学报．1998年8月，第28卷，第4期，378-382．
[17] 喻光正等．直升机3mm防撞雷达．电讯技术，1999，特刊，22(1)：19-26．
[18] 孙鉴．直升机毫米波防撞雷达．电讯技术，1991，增刊2，16-26．
[19] 徐永胜．国外直升机障碍物回避雷达简述．电子十所内部资料，1990：35-39．
[20] 甘体国．毫米波雷达频率源的频率稳定问题．电讯技术，2000年特刊4,48-56．
[21] Joel W. Gannett and Leon O.Chua. A nonlinear circuit model for IMPATT diodes. IEEE Trans. On circuit and systems,vol. Cas-25,No.5,May1978:299-308.
[22] Bevan D. Bates. A comparison of IMPATT oscillator power and frequency above 100 GHz with results derived from theoretical models. IEEE Trans.vol. MTT-32,No. 10,October 1984:1394-1398.
[23] 甘本袯，吴万春．现代微波滤波器的结构与设计．科学出版社，1973年．
[24] 黎安尧编．微波技术基础．电子科技大学内部讲义，1983年，
[25] 柳维君编．微波技术基础．电子科技大学出版社，1989年．
[26] 林为干编．微波理论与技术．科学出版社，1979年．