Ge/Si异质结及其光电探测器特性研究
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摘要
近年来,随着光通信技术的发展,制备响应波长在1.3μm和1.55μm,并具有高响应度、高量子效率、低暗电流以及高响应频率带宽的光电探测器以实现Si基光电集成接收芯片一直是人们追求的目标。InGaAs/InP等Ⅲ-Ⅴ族半导体材料制备的探测器量子效率高、暗电流小并已进入产业化阶段,但其价格昂贵、导热性能和机械性能较差以及与现有的成熟的Si工艺兼容性差等缺点限制了其在Si基光电集成技术中的应用。Ge材料的直接带隙约为0.67eV,对光通信中C波段(1528～1560nm)的光信号有较好的响应特性,并且Ge/Si异质结中外延Ge材料由于存在张应变,使其带隙变窄、吸收系数增大、吸收波长扩展至1.6μm以上,可以对光通信的L波段(1561～1620μm)的信号进行检测,满足了不断发展的波分复用技术的需求。特别是Ge材料的价格低廉以及与现有的Si工艺完全兼容,因此,研究和制备Ge/Si异质结光电探测器引起了人们极大的兴趣。然而由于Ge和Si的晶格失配度较大,在Ge/Si异质结的Ge外延材料中存在较高密度的位错,导致Ge/Si异质结光电探测器暗电流特性变差,限制了器件的发展。
本文围绕Ge/Si异质结特性,从器件内部的物理机理上对其PIN型光电探测器和分离吸收与倍增层雪崩型(SACM-APD)光电探测器的特性做了理论研究和分析,从而为Ge/Si异质结光电探测器的设计、制造、性能优化、应用控制提供理论依据。本论文主要工作和研究成果如下：
1.研究和分析了Ge/Si异质结中位错对光电探测器特性的影响。从Ge/Si异质结中位错的形成机理和特性出发,结合器件工作的物理机制和实际器件中存在的物理效应,分别从位错的密度分布和位错的电离能两方面对器件性能产生的影响做了调查研究,并与实验结果进行了比对验证。结果表明,Ge外延层中位错起到了复合中心的作用,使载流子发生间接复合,是形成探测器暗电流的主要机制,其间接复合率会受到位错的密度、位错的电离能以及载流子浓度的影响。因此,降低Ge外延层、特别是Ge缓冲层的位错密度可以有效的降低器件的暗电流；在高偏压下,受电场影响Ge材料的能带发生弯曲使得位错的电离能降低,暗电流增大,并随着Ge吸收层厚度的减小,影响显著增大。结合以上两方面的因素,以及Ge/Si异质结的能带结构和重掺杂Si衬底中杂质向Ge外延层的扩散,我们计算得到的PIN型和SACM-APD型Ge/Si异质结光电探测器的特性结果与实验测试结果一致。
2.分析了Ge/Si异质结的Ge外延层中应变的形成机理及其对外延Ge材料性质和光电探测器特性的影响。由于Ge和Si的热膨胀系数不同,从较高的生长温度冷却到室温时,在弛豫的Ge外延层中形成的热应变表现为双轴张应变。受张应变的作用,外延Ge材料的轻、重空穴带分离,直接带隙减小,对入射光的吸收系数增大。因此,采用Ge/Si异质结制备的光电探测器对光信号的响应度增大,响应截止波长向长波长延伸。这种张应变主要受到工艺温度的影响,其最大值可达到0.34%。结合应变与材料参数特性的关系,我们给出了探测器响应度随应变量和波长的变化关系,并与实验结果相吻合。
3.研究了Ge/Si异质结光电探测器的频率响应特性,并分析了器件的几何结构对频率响应的影响。光电探测器的频率响应主要受到载流子的在耗尽层中的渡越时间、在耗尽层之外的扩散时间以及RC响应时间的限制。在SACM-APD型Ge/Si异质结探测器中,频率特性在大增益的情况下还受到雪崩建立时间的影响。采用雪崩增益模型的数值计算以及频率响应的矩阵代数分析法,我们得到探测器的频率特性与实验结果一致。对于PIN型光电探测器,Ge吸收层的厚度对渡越时间和RC响应时间的影响不同,因此,在器件表面面积一定时,对某一Ge吸收层厚度下,探测器有最大3dB带宽。对于SACM-APD型Ge/Si异质结探测器,在较高的光辐射或高外加偏压的情况下,受到雪崩倍增产生的载流子形成的空间电荷效应影响,雪崩增益下降,而器件的响应频率带宽增大,在某一偏压下,探测器有最大增益带宽积。
本论文所研究的以上主要工作,可以在较大程度上避免当前器件结构设计的盲目性,增强制造过程中技术措施的针对性,对材料、结构、工艺和特性之间的相互制约关系取得更加深入的认识,并为解决器件实际使用过程中的相关问题提供新的思路。
With the development of optical communication technology in rencent years, researchers have been interesting in production the photodetectors with high responsivity, high quantum efficiency, low dark current and large bandwidth at1.3μm and1.55μm wavelength in order to realize the monolithic Si-based photoelectronic integration. The industrialized Ⅲ-Ⅴ photodetectors have high cost and poor thermal conductivity and mechanical behavior. Additionally, they are not compatible with the existing mature Si-based complementary metal-oxide-semiconductor process technology (CMOS). Thin film Ge have high absorption coefficient at the wavelength of interest (1.3～1.55μm) and good transport properties, and compatibility with Si technology. Therefore, Ge photodetector fabricated on Si substrate are the ideal candidate for photodetectors used in low-cost monolithic transceivers for optical communications. But, the large dark current in Ge/Si heterojuction photodetector is the main limiting. In this paper, the poperties of Ge/Si heteroj unction and the physical mechanism of Ge/Si PIN photodetector and Sperate-Absorption-Charge-Multiplication avalanche photodetector (SACM-APD) are detailed investigated, which provide a theoretical basis for device design, manufacture, and optimization. The following are the details and research results:
1. The effect of dislocations in the Ge/Si heterojunction on the characteristics of photodetecter is studied and investigated. Based on the formation mechanism and characteristics of threading dislocations in the Ge/Si heterojunction, and combined with operation mechanism and the physical effects in actual devices, the impacts of dislocation density distribution and dislocation active energy on the device performances are researched and validated by compared with experimental results. The results show that the dislocations in Ge epitaxial layer play the role of recombination centers and induce the indirect recombination of carriers, which is the main mechanism for the formation of dark current. The indirect recombination rate is influenced by the dislocation density, dislocation active energy and carrier concentration. Therefore, decreasing the dislocation density in Ge epitaxial layer, especially in Ge buffer layer, can effectively reduce the device's dark current. The band bending due to the high bias in Ge materials decrease dislocation active energy and increases dark current, and the impact is enhanced with the Ge absorption layer thickness decreasing. Combining these two factors, as well as Ge/Si heterojunction band structure and impurities out-diffusion from heavily doped Si substrate to Ge epilayer, the calculated results of Ge/Si heterojunction PIN photodetectors and SACM-APD are presented and well consistent with the experimental data.
2. The formation mechanism of strain in film Ge on Si substrate is investigated and their impact on the performance of photodetector is detailed studied. The tensile strain in Ge epitaxial layer is generated during the cooling from high growth temperature to room temperature due to the thermal-expansion coefficients mismatch between Ge and Si, which can be0.34%as maximum. The band shringkage induced by tensile strain increase the absorption coefficient of Ge material. Thereby Ge/Si photodetectors have enhanced responsivity and extended cut-off wavelength. Considering the relationship between strain and material parameters, the responsivities of photodetector varing with wavelength are calculated and consistent with experimental results.
3. The influence of the geometry of the Ge/Si heterojunction photodetector on frequency response characteristics is researched. The frequency response of photodetector is mainly affected by the carrier transit time in the depletion layer, the diffusion time outside the depletion layer, and RC response time, and also limited by avalanche build-up time at large gain. The results show that the3dB bandwidth of PIN photodetector is varied the thickness of with Ge absorbing layer. The3dB bandwidth of Ge/Si SACM-APD has a enhancement behavior as the result of decrease of the multiplication time limitation due to the gain drop through the space charge effect. This effect is noteble in the Ge layer at high bias voltages or large optical input powers.
These results reached in the dissertation can largely help avoid the purblindness in device design and enhance the accuracy of technological measures of manufacturing process. With a depper understanding of mutual constraint relationship between characteristics and parameters including materials, structures, and processing, this dissertation provides novel and valuable approaches to solving the problems during the application process of Ge/Si heterojunction photodetector.
本文围绕Ge/Si异质结特性,从器件内部的物理机理上对其PIN型光电探测器和分离吸收与倍增层雪崩型(SACM-APD)光电探测器的特性做了理论研究和分析,从而为Ge/Si异质结光电探测器的设计、制造、性能优化、应用控制提供理论依据。本论文主要工作和研究成果如下：
1.研究和分析了Ge/Si异质结中位错对光电探测器特性的影响。从Ge/Si异质结中位错的形成机理和特性出发,结合器件工作的物理机制和实际器件中存在的物理效应,分别从位错的密度分布和位错的电离能两方面对器件性能产生的影响做了调查研究,并与实验结果进行了比对验证。结果表明,Ge外延层中位错起到了复合中心的作用,使载流子发生间接复合,是形成探测器暗电流的主要机制,其间接复合率会受到位错的密度、位错的电离能以及载流子浓度的影响。因此,降低Ge外延层、特别是Ge缓冲层的位错密度可以有效的降低器件的暗电流；在高偏压下,受电场影响Ge材料的能带发生弯曲使得位错的电离能降低,暗电流增大,并随着Ge吸收层厚度的减小,影响显著增大。结合以上两方面的因素,以及Ge/Si异质结的能带结构和重掺杂Si衬底中杂质向Ge外延层的扩散,我们计算得到的PIN型和SACM-APD型Ge/Si异质结光电探测器的特性结果与实验测试结果一致。
2.分析了Ge/Si异质结的Ge外延层中应变的形成机理及其对外延Ge材料性质和光电探测器特性的影响。由于Ge和Si的热膨胀系数不同,从较高的生长温度冷却到室温时,在弛豫的Ge外延层中形成的热应变表现为双轴张应变。受张应变的作用,外延Ge材料的轻、重空穴带分离,直接带隙减小,对入射光的吸收系数增大。因此,采用Ge/Si异质结制备的光电探测器对光信号的响应度增大,响应截止波长向长波长延伸。这种张应变主要受到工艺温度的影响,其最大值可达到0.34%。结合应变与材料参数特性的关系,我们给出了探测器响应度随应变量和波长的变化关系,并与实验结果相吻合。
3.研究了Ge/Si异质结光电探测器的频率响应特性,并分析了器件的几何结构对频率响应的影响。光电探测器的频率响应主要受到载流子的在耗尽层中的渡越时间、在耗尽层之外的扩散时间以及RC响应时间的限制。在SACM-APD型Ge/Si异质结探测器中,频率特性在大增益的情况下还受到雪崩建立时间的影响。采用雪崩增益模型的数值计算以及频率响应的矩阵代数分析法,我们得到探测器的频率特性与实验结果一致。对于PIN型光电探测器,Ge吸收层的厚度对渡越时间和RC响应时间的影响不同,因此,在器件表面面积一定时,对某一Ge吸收层厚度下,探测器有最大3dB带宽。对于SACM-APD型Ge/Si异质结探测器,在较高的光辐射或高外加偏压的情况下,受到雪崩倍增产生的载流子形成的空间电荷效应影响,雪崩增益下降,而器件的响应频率带宽增大,在某一偏压下,探测器有最大增益带宽积。
本论文所研究的以上主要工作,可以在较大程度上避免当前器件结构设计的盲目性,增强制造过程中技术措施的针对性,对材料、结构、工艺和特性之间的相互制约关系取得更加深入的认识,并为解决器件实际使用过程中的相关问题提供新的思路。
With the development of optical communication technology in rencent years, researchers have been interesting in production the photodetectors with high responsivity, high quantum efficiency, low dark current and large bandwidth at1.3μm and1.55μm wavelength in order to realize the monolithic Si-based photoelectronic integration. The industrialized Ⅲ-Ⅴ photodetectors have high cost and poor thermal conductivity and mechanical behavior. Additionally, they are not compatible with the existing mature Si-based complementary metal-oxide-semiconductor process technology (CMOS). Thin film Ge have high absorption coefficient at the wavelength of interest (1.3～1.55μm) and good transport properties, and compatibility with Si technology. Therefore, Ge photodetector fabricated on Si substrate are the ideal candidate for photodetectors used in low-cost monolithic transceivers for optical communications. But, the large dark current in Ge/Si heterojuction photodetector is the main limiting. In this paper, the poperties of Ge/Si heteroj unction and the physical mechanism of Ge/Si PIN photodetector and Sperate-Absorption-Charge-Multiplication avalanche photodetector (SACM-APD) are detailed investigated, which provide a theoretical basis for device design, manufacture, and optimization. The following are the details and research results:
1. The effect of dislocations in the Ge/Si heterojunction on the characteristics of photodetecter is studied and investigated. Based on the formation mechanism and characteristics of threading dislocations in the Ge/Si heterojunction, and combined with operation mechanism and the physical effects in actual devices, the impacts of dislocation density distribution and dislocation active energy on the device performances are researched and validated by compared with experimental results. The results show that the dislocations in Ge epitaxial layer play the role of recombination centers and induce the indirect recombination of carriers, which is the main mechanism for the formation of dark current. The indirect recombination rate is influenced by the dislocation density, dislocation active energy and carrier concentration. Therefore, decreasing the dislocation density in Ge epitaxial layer, especially in Ge buffer layer, can effectively reduce the device's dark current. The band bending due to the high bias in Ge materials decrease dislocation active energy and increases dark current, and the impact is enhanced with the Ge absorption layer thickness decreasing. Combining these two factors, as well as Ge/Si heterojunction band structure and impurities out-diffusion from heavily doped Si substrate to Ge epilayer, the calculated results of Ge/Si heterojunction PIN photodetectors and SACM-APD are presented and well consistent with the experimental data.
2. The formation mechanism of strain in film Ge on Si substrate is investigated and their impact on the performance of photodetector is detailed studied. The tensile strain in Ge epitaxial layer is generated during the cooling from high growth temperature to room temperature due to the thermal-expansion coefficients mismatch between Ge and Si, which can be0.34%as maximum. The band shringkage induced by tensile strain increase the absorption coefficient of Ge material. Thereby Ge/Si photodetectors have enhanced responsivity and extended cut-off wavelength. Considering the relationship between strain and material parameters, the responsivities of photodetector varing with wavelength are calculated and consistent with experimental results.
3. The influence of the geometry of the Ge/Si heterojunction photodetector on frequency response characteristics is researched. The frequency response of photodetector is mainly affected by the carrier transit time in the depletion layer, the diffusion time outside the depletion layer, and RC response time, and also limited by avalanche build-up time at large gain. The results show that the3dB bandwidth of PIN photodetector is varied the thickness of with Ge absorbing layer. The3dB bandwidth of Ge/Si SACM-APD has a enhancement behavior as the result of decrease of the multiplication time limitation due to the gain drop through the space charge effect. This effect is noteble in the Ge layer at high bias voltages or large optical input powers.
These results reached in the dissertation can largely help avoid the purblindness in device design and enhance the accuracy of technological measures of manufacturing process. With a depper understanding of mutual constraint relationship between characteristics and parameters including materials, structures, and processing, this dissertation provides novel and valuable approaches to solving the problems during the application process of Ge/Si heterojunction photodetector.
引文
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