室内测量GaAs多结级联太阳电池特性参数分析
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摘要
随着国内外光伏技术的发展,加入光伏领域的研究机构和企业越来越多,尤其是地面光伏应用方面,太阳电池的应用范围已经从空间军事领域逐步扩展到了地面民用领域。在不久的将来,各种太阳电池必将大量涌现,届时电池性能和质量的评判就显得尤为重要。太阳能电池的室内输出特性直接影响到其户外表现,所以在室内对太阳电池进行测试、质量评判就显得极为重要。在室内模拟光源下可以直接测得太阳电池的包括效率在内的各个重要参数,它们是衡量太阳电池的性能优劣的关键指标。
本文通过对GaAs太阳电池在有/无光照条件下的测量,分析了电池的光/暗特性曲线,并分别提取出了电池的几个重要的特征参数。通过暗特性的测量,我们可以找出生产过程中由于封装工艺过程和人为误操作出现的不合格产品;通过光特性的测量,则可以找出暗特性测量中检测不出来的不合格品,比如芯片的外延生长缺陷,并对电池进行标定。对比分析了光暗两种情况下太阳电池串并联电阻的计算方法,结果表明光照能使电池的串联电阻显著增加。
搭建了一套模拟光源下的室内光特性测量系统,分析了GaAs电池在标准测试条件下的I-V、P-V特性曲线,得到了几个表征电池性能的特征参数。多次测量结果表明,在AM1.5标准条件下,太阳电池的光电转换效率为30%-32%。通过调整太阳模拟器的发光强度,模拟测量了高倍聚光条件下太阳电池的输出特性,研究了电池特征参数随着光强和工作温度的变化关系,对户外聚光条件下电池的特性研究提供理论参考。
With the development of photovoltaic technology at home and abroad, more and more research institutions and enterprises have joined the field of photovoltaic, especially in terrestrial photovoltaic applications, gradually extended from space military field to ground civil field. In the near future, there will emerge large numbers of solar cells, the output characteristic and quality evaluation is particularly important then. Solar cell’s indoor output characteristics have direct impact on its outdoor performance. Therefore, the solar cell quality evaluation indoor becomes extremely important. Under the simulated light source, all the important parameters, including efficiency, of solar cells can be directly measured, which are key indicators to a solar cell.
Based on the measurement of GaAs solar cell in both with and without light condition, its current-voltage curves have been analyzed, and several important parameters have been extracted from the curves. From dark IV test, the failure parts caused by packaging technology or man-made can be removed during production; from light IV test, the defective products, which can not be detected in the dark IV test, can be found out, such as chip’s epitaxial growth defects. Light IV test can calibrate the solar cell too.
Build an indoor test system with a sun simulator, analysised the solar cell’s IV curve and PV curve under standard conditions, gained several important parameters resembling the solar cell’s performance. Many test data showed, the conversion efficiency of a GaAs solar cell is about 30%-32% under AM1.5 standard condition. By adjusting the solar simulator’s light intensity, simulated measured the output character under high concentration, studied the parameters dependence on the light intensity and work temperature, and provided theory reference to the outdoor test.
本文通过对GaAs太阳电池在有/无光照条件下的测量,分析了电池的光/暗特性曲线,并分别提取出了电池的几个重要的特征参数。通过暗特性的测量,我们可以找出生产过程中由于封装工艺过程和人为误操作出现的不合格产品;通过光特性的测量,则可以找出暗特性测量中检测不出来的不合格品,比如芯片的外延生长缺陷,并对电池进行标定。对比分析了光暗两种情况下太阳电池串并联电阻的计算方法,结果表明光照能使电池的串联电阻显著增加。
搭建了一套模拟光源下的室内光特性测量系统,分析了GaAs电池在标准测试条件下的I-V、P-V特性曲线,得到了几个表征电池性能的特征参数。多次测量结果表明,在AM1.5标准条件下,太阳电池的光电转换效率为30%-32%。通过调整太阳模拟器的发光强度,模拟测量了高倍聚光条件下太阳电池的输出特性,研究了电池特征参数随着光强和工作温度的变化关系,对户外聚光条件下电池的特性研究提供理论参考。
With the development of photovoltaic technology at home and abroad, more and more research institutions and enterprises have joined the field of photovoltaic, especially in terrestrial photovoltaic applications, gradually extended from space military field to ground civil field. In the near future, there will emerge large numbers of solar cells, the output characteristic and quality evaluation is particularly important then. Solar cell’s indoor output characteristics have direct impact on its outdoor performance. Therefore, the solar cell quality evaluation indoor becomes extremely important. Under the simulated light source, all the important parameters, including efficiency, of solar cells can be directly measured, which are key indicators to a solar cell.
Based on the measurement of GaAs solar cell in both with and without light condition, its current-voltage curves have been analyzed, and several important parameters have been extracted from the curves. From dark IV test, the failure parts caused by packaging technology or man-made can be removed during production; from light IV test, the defective products, which can not be detected in the dark IV test, can be found out, such as chip’s epitaxial growth defects. Light IV test can calibrate the solar cell too.
Build an indoor test system with a sun simulator, analysised the solar cell’s IV curve and PV curve under standard conditions, gained several important parameters resembling the solar cell’s performance. Many test data showed, the conversion efficiency of a GaAs solar cell is about 30%-32% under AM1.5 standard condition. By adjusting the solar simulator’s light intensity, simulated measured the output character under high concentration, studied the parameters dependence on the light intensity and work temperature, and provided theory reference to the outdoor test.
引文
[1]郭爱萍,孙强.基于GaAs半导体太阳电池技术发展概况[J].电源技术,2007,31(9):757-758
[2]冯瑞华,马庭灿,万勇.太阳能材料国际发展态势分析[J].科学观察,2008,3(6):11-25
[3]陈文浚.III-V族化合物半导体整体多结级连太阳电池——光伏技术的新突破[J].电源技术,2007,31(02):103-108
[4] Nasser H. Karam et al.,“Recent Development in High Efficiency Ga0.5In0.5P/GaAs/Ge Dual-and Triple-junction Solar Cells: Steps to Next Generation PV Cells”, Solar Energy Materials & Solar Cells,66, 2001,pp. 453-456)
[5] Henry W. Brand horst J. and Dennis J. Flood,“The Past, Present and Future of Space photovoltaic”, Proc. 4th World Conference on Photovoltaic Energy Conversion, Hawaii, USA, May 7-12,2006,pp.1744-1749
[6]张忠卫,陆剑峰,池卫英.砷化镓太阳电池技术的进展与前景[J].上海航天,2003,3(9):33-38
[7]孙强,孙彦铮.III-V高效三结电池聚光光伏应用进展[J].电源技术,2008,132(3):194-196
[8]向贤碧,廖显伯.Ⅲ-Ⅴ族太阳电池的研究与应用[J].阳光能源,2008,6(04):23-28
[9]何炜瑜.GaAs系列太阳电池技术与发展[J].天津:中国民航学院学报,2004,22(2):59-64
[10] Martin A. Green,“Recent Developments and Further prospects for Third Generation and Other Advanced Cells”, Proc. 4th World Conference on Photovoltaic Energy Conversion, Hawaii, USA, May 7-12, 2006, pp.15-19)
[11]赵富鑫,魏彦章主编.太阳电池及其应用[M].北京:国防工业出版社,1985,71-102
[12]钱伯章.太阳能光伏发电成本展望[J].中国环保产业,2009,4:24-28
[13]仲跻功.太阳模拟器光学系统的几个问题[J].太阳能学报,1983,4(3):187-193
[14]邱丽容.太阳电池测试系统[J].西安:西安交通大学出版社,1999
[15]刘恩科.光电池及其应用.北京:科学出版社,1989:96-102
[16] Richard R. King et al.,“Advanced III-V Multi junction Cells for Space”, Proc. 4th World Conference on Photovoltaic Energy Conversion, Hawaii, USA, May 7-12,2006, pp.1757-1762
[17]安其霖,曹国琛等编.太阳电池原理与工艺.上海:上海科学技术出版社,1984,11(4):57-78
[18]李辉.GaInP/GaAs/Ge级联太阳电池的MOCVD生长研究[D].西安:中国科学院西安光学精密机械研究所,2001
[19] Richard R. King et al.,“Metamorphic and Lattice-Matched Solar Cells Under Concentration”,Proc.4th World Conference on Photovoltaic Energy Conversion, Hawaii, USA, May 7-12,2006,pp.760-763)
[20]李秀文,谢鸿礼,赵海滨等译.太阳电池工作原理、工艺和系统的应用.电子工业出版社,1989:81-96
[21] Relents et al.,(2001) Non-imaging Fresnel Lenses: Design and Performance of Solar Concentrators, Springer Verlag,Heidelberg (2009)
[22]杨德仁.太阳电池材料[M].北京:化学工业出版社,2006:57-73
[23]施小忠,夏冠群,汪乐等.GaAs太阳电池的体电阻及旁路漏电流对电池结特性的影响[J].固体电子学研究与进展,1998,18(4):393-398
[24] KEENER CD, et al. Progress toward technology transition of GaInP/GaAs/Ge multi-junction solar cells [C].Anaheim CA: Proceedings of 26th IEEE PVSC, 1997, 787-792
[25] Garboushian V, Yoon G, Gunn A et al, A novel high-concentration PV technology for cost-competitive utility bulk power generation[A].IEEE 1st world conference On Photovoltaic energy conversion[C],1994:1060-1063
[26] TIVANOVA M, PATRYNB A,DROZDOVA N. Determination of solar cell parameters from its current-voltage and spectral characteristics [J].Solar Energy Materials& Solar Cells.2005, 1987: 461-465
[27]李友杰.高效三结GaInP_2/GaAs/Ge太阳电池研究[硕士论文].上海:上海交通大学,2008
[28]梁骏吾等译.太阳电池:材料、制备工艺及检测[M].机械工业出版社,2009:72-278
[29]王军,王鹤,杨宏等.太阳电池串联电阻的一种精确算法[J].电源技术,2008,32(10):681-683
[30]施小忠,夏冠群,汪乐等.MOCVD GaAs太阳电池的结特性[J].半导体学报,1999,20(1):72-78
[31] W. E. McMahon, S. Kurtz, K. Emery, M. S. Young,“Criteria for the Design of GaInP/GaAs/Ge Triple Junction Cells to Optimize Their Performance Outdoors”, Proc. 29th IEEE PVSC,2002, 931-934
[32]仲跻跃,周耀宗,于培诺等.GB/T12637-90太阳模拟器通用规范.中华人民共和国机械电子工业部,1990:2-4
[33]刘洪波.太阳模拟技术[J].光学精密工程,2001,9(2):177-181
[34]庞贺伟,黄本诚,臧友竹等.KM6太阳模拟器设计概述[J].航天器环境工程,2006,23(3):125-133
[35]黄嘉豫等.GB/T645.1-1996光伏器件第1部分:光伏电压-电流特性的测量.中华人民共和国机械电子工业部,1996:3-5
[36]杨乐平,李海涛,赵勇.Lab VIEW高级程序设计[M].北京:清华大学出版社,2003,1-5
[37]张玉存,刘彬.基于虚拟仪器下的太阳能电池模块测试系统[J].传感技术学报,2003,9(3):370-378
[38]任驹,郭文阁,郑建邦.基于P-N结的太阳电池伏安特性的分析与模拟[J].光子学报,2006,20(3):114-119
[39] J.A. Duffie, W.A. Beckman, Solar Engineering of Thermal Processes, New York:John Wiley & Sons,1980
[40] CROSS TA, et al. GaAs solar panels for small satellites : Performance data and technology trends[C].Washington DC:Proceedings of 25th IEEE PVSC,1996,277-282
[41] K. Araki et al.,“A Simple Passive Cooling Structure and its Heat Analysis for 500X Concentrator PV Module,Proc.29th IEEE PVSC,2002,1568-1571
[2]冯瑞华,马庭灿,万勇.太阳能材料国际发展态势分析[J].科学观察,2008,3(6):11-25
[3]陈文浚.III-V族化合物半导体整体多结级连太阳电池——光伏技术的新突破[J].电源技术,2007,31(02):103-108
[4] Nasser H. Karam et al.,“Recent Development in High Efficiency Ga0.5In0.5P/GaAs/Ge Dual-and Triple-junction Solar Cells: Steps to Next Generation PV Cells”, Solar Energy Materials & Solar Cells,66, 2001,pp. 453-456)
[5] Henry W. Brand horst J. and Dennis J. Flood,“The Past, Present and Future of Space photovoltaic”, Proc. 4th World Conference on Photovoltaic Energy Conversion, Hawaii, USA, May 7-12,2006,pp.1744-1749
[6]张忠卫,陆剑峰,池卫英.砷化镓太阳电池技术的进展与前景[J].上海航天,2003,3(9):33-38
[7]孙强,孙彦铮.III-V高效三结电池聚光光伏应用进展[J].电源技术,2008,132(3):194-196
[8]向贤碧,廖显伯.Ⅲ-Ⅴ族太阳电池的研究与应用[J].阳光能源,2008,6(04):23-28
[9]何炜瑜.GaAs系列太阳电池技术与发展[J].天津:中国民航学院学报,2004,22(2):59-64
[10] Martin A. Green,“Recent Developments and Further prospects for Third Generation and Other Advanced Cells”, Proc. 4th World Conference on Photovoltaic Energy Conversion, Hawaii, USA, May 7-12, 2006, pp.15-19)
[11]赵富鑫,魏彦章主编.太阳电池及其应用[M].北京:国防工业出版社,1985,71-102
[12]钱伯章.太阳能光伏发电成本展望[J].中国环保产业,2009,4:24-28
[13]仲跻功.太阳模拟器光学系统的几个问题[J].太阳能学报,1983,4(3):187-193
[14]邱丽容.太阳电池测试系统[J].西安:西安交通大学出版社,1999
[15]刘恩科.光电池及其应用.北京:科学出版社,1989:96-102
[16] Richard R. King et al.,“Advanced III-V Multi junction Cells for Space”, Proc. 4th World Conference on Photovoltaic Energy Conversion, Hawaii, USA, May 7-12,2006, pp.1757-1762
[17]安其霖,曹国琛等编.太阳电池原理与工艺.上海:上海科学技术出版社,1984,11(4):57-78
[18]李辉.GaInP/GaAs/Ge级联太阳电池的MOCVD生长研究[D].西安:中国科学院西安光学精密机械研究所,2001
[19] Richard R. King et al.,“Metamorphic and Lattice-Matched Solar Cells Under Concentration”,Proc.4th World Conference on Photovoltaic Energy Conversion, Hawaii, USA, May 7-12,2006,pp.760-763)
[20]李秀文,谢鸿礼,赵海滨等译.太阳电池工作原理、工艺和系统的应用.电子工业出版社,1989:81-96
[21] Relents et al.,(2001) Non-imaging Fresnel Lenses: Design and Performance of Solar Concentrators, Springer Verlag,Heidelberg (2009)
[22]杨德仁.太阳电池材料[M].北京:化学工业出版社,2006:57-73
[23]施小忠,夏冠群,汪乐等.GaAs太阳电池的体电阻及旁路漏电流对电池结特性的影响[J].固体电子学研究与进展,1998,18(4):393-398
[24] KEENER CD, et al. Progress toward technology transition of GaInP/GaAs/Ge multi-junction solar cells [C].Anaheim CA: Proceedings of 26th IEEE PVSC, 1997, 787-792
[25] Garboushian V, Yoon G, Gunn A et al, A novel high-concentration PV technology for cost-competitive utility bulk power generation[A].IEEE 1st world conference On Photovoltaic energy conversion[C],1994:1060-1063
[26] TIVANOVA M, PATRYNB A,DROZDOVA N. Determination of solar cell parameters from its current-voltage and spectral characteristics [J].Solar Energy Materials& Solar Cells.2005, 1987: 461-465
[27]李友杰.高效三结GaInP_2/GaAs/Ge太阳电池研究[硕士论文].上海:上海交通大学,2008
[28]梁骏吾等译.太阳电池:材料、制备工艺及检测[M].机械工业出版社,2009:72-278
[29]王军,王鹤,杨宏等.太阳电池串联电阻的一种精确算法[J].电源技术,2008,32(10):681-683
[30]施小忠,夏冠群,汪乐等.MOCVD GaAs太阳电池的结特性[J].半导体学报,1999,20(1):72-78
[31] W. E. McMahon, S. Kurtz, K. Emery, M. S. Young,“Criteria for the Design of GaInP/GaAs/Ge Triple Junction Cells to Optimize Their Performance Outdoors”, Proc. 29th IEEE PVSC,2002, 931-934
[32]仲跻跃,周耀宗,于培诺等.GB/T12637-90太阳模拟器通用规范.中华人民共和国机械电子工业部,1990:2-4
[33]刘洪波.太阳模拟技术[J].光学精密工程,2001,9(2):177-181
[34]庞贺伟,黄本诚,臧友竹等.KM6太阳模拟器设计概述[J].航天器环境工程,2006,23(3):125-133
[35]黄嘉豫等.GB/T645.1-1996光伏器件第1部分:光伏电压-电流特性的测量.中华人民共和国机械电子工业部,1996:3-5
[36]杨乐平,李海涛,赵勇.Lab VIEW高级程序设计[M].北京:清华大学出版社,2003,1-5
[37]张玉存,刘彬.基于虚拟仪器下的太阳能电池模块测试系统[J].传感技术学报,2003,9(3):370-378
[38]任驹,郭文阁,郑建邦.基于P-N结的太阳电池伏安特性的分析与模拟[J].光子学报,2006,20(3):114-119
[39] J.A. Duffie, W.A. Beckman, Solar Engineering of Thermal Processes, New York:John Wiley & Sons,1980
[40] CROSS TA, et al. GaAs solar panels for small satellites : Performance data and technology trends[C].Washington DC:Proceedings of 25th IEEE PVSC,1996,277-282
[41] K. Araki et al.,“A Simple Passive Cooling Structure and its Heat Analysis for 500X Concentrator PV Module,Proc.29th IEEE PVSC,2002,1568-1571