全息光栅反应离子束刻蚀特性研究
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摘要
本文围绕离子束刻蚀衍射光栅的方法,对刻蚀过程中的图形演化展开了理论和实验的研究。主要包括以下几个方面的内容。
首先,介绍了离子束刻蚀技术和常见的Kaufman离子源系统,讨论了离子束刻蚀中主要工艺参数,阐述了刻面、开槽和再沉积等离子束刻蚀中出现的常见现象,分析了其产生的机理,提出了解决方法。系统地研究了石英、光刻胶和铬三种材料在Ar气和CHF_3气体中的刻蚀特性,分析离子能量、束流密度和离子束入射角度对刻蚀速率的影响。
介绍了模拟刻蚀过程中图形演化的几种常见的算法。在忽略再沉积效应、刻面效应和二次刻蚀效应的基础上,用线段运动算法建立理想的离子束刻蚀图形演化程序,并验证了程序的可行性。模拟了Ar离子束刻蚀和CHF_3反应离子束刻蚀中的图形演化规律,结果发现用CHF_3反应离子束刻蚀光刻胶光栅能够得到较为陡直的基片槽形。
研究了光纤光栅刻蚀中的演化规律,并和实验结果有比较好的吻合。针对CHF_3反应离子束刻蚀中刻蚀占宽比难以控制的问题,提出用离子束刻蚀和反应离子束刻蚀相结合的方法,实现对刻蚀槽形占宽比的控制,这种方法对于较大条纹密度的光刻胶光栅掩模有良好的适用性,为光纤光栅位相掩模的离子束刻蚀提供了可行的刻蚀方案。
This thesis is concentrated on method of ion beam etching grating and the theoretical and experimental research on evolution of graph of etching process is developed. The main work of the thesis includes:
Firstly, the technology of ion beam etching and common Kaufman ion source system is introduced, this article also discusses the main technical parameter on ion beam etching process, expounds the common phenomenon which appears in ion beam etching process, such as faced、grooving and redeposit etc, analyzes its producing mechanism and gives solving methods. Meanwhile, etching characteristic of quartz、photoresist and chromium in gas Ar and CHF3 medium is systematic studied, ion energy、beam current density and the effect of incident angle of particle beam on etching rate are analyzed.
Some familiar algorithm about simulation of graph evolution on process of etching is introduced. On the basis of ignoring effect of redeposit、faced and twice etching, by line-segment-algorithm an ideal program of ion beam etching graphic evolution is established and its feasibility is verified. Then the law of graphic evolution in the Ar ion beam and CHF3 reaction beam etching is simulated, and we find that by using of CHF3 reaction beam etching photoresist, the side wall substrate profile could be obtained.
The evolution law of the fiber grating etching is studied, which quite consistent with the experiment result. Focusing on the problem of controlling groove depth and duty cycle the process of CHF3 reaction beam etching, one method of combination ion beam etching and reaction ion beam etching is proposed, which is applied in controlling groove depth and duty cycle, moreover ,this method could be well adapted to photoresist grating mask of lager fringe density and provide feasible etching scheme for ion beam etching of fiber grating phase mask.
首先,介绍了离子束刻蚀技术和常见的Kaufman离子源系统,讨论了离子束刻蚀中主要工艺参数,阐述了刻面、开槽和再沉积等离子束刻蚀中出现的常见现象,分析了其产生的机理,提出了解决方法。系统地研究了石英、光刻胶和铬三种材料在Ar气和CHF_3气体中的刻蚀特性,分析离子能量、束流密度和离子束入射角度对刻蚀速率的影响。
介绍了模拟刻蚀过程中图形演化的几种常见的算法。在忽略再沉积效应、刻面效应和二次刻蚀效应的基础上,用线段运动算法建立理想的离子束刻蚀图形演化程序,并验证了程序的可行性。模拟了Ar离子束刻蚀和CHF_3反应离子束刻蚀中的图形演化规律,结果发现用CHF_3反应离子束刻蚀光刻胶光栅能够得到较为陡直的基片槽形。
研究了光纤光栅刻蚀中的演化规律,并和实验结果有比较好的吻合。针对CHF_3反应离子束刻蚀中刻蚀占宽比难以控制的问题,提出用离子束刻蚀和反应离子束刻蚀相结合的方法,实现对刻蚀槽形占宽比的控制,这种方法对于较大条纹密度的光刻胶光栅掩模有良好的适用性,为光纤光栅位相掩模的离子束刻蚀提供了可行的刻蚀方案。
This thesis is concentrated on method of ion beam etching grating and the theoretical and experimental research on evolution of graph of etching process is developed. The main work of the thesis includes:
Firstly, the technology of ion beam etching and common Kaufman ion source system is introduced, this article also discusses the main technical parameter on ion beam etching process, expounds the common phenomenon which appears in ion beam etching process, such as faced、grooving and redeposit etc, analyzes its producing mechanism and gives solving methods. Meanwhile, etching characteristic of quartz、photoresist and chromium in gas Ar and CHF3 medium is systematic studied, ion energy、beam current density and the effect of incident angle of particle beam on etching rate are analyzed.
Some familiar algorithm about simulation of graph evolution on process of etching is introduced. On the basis of ignoring effect of redeposit、faced and twice etching, by line-segment-algorithm an ideal program of ion beam etching graphic evolution is established and its feasibility is verified. Then the law of graphic evolution in the Ar ion beam and CHF3 reaction beam etching is simulated, and we find that by using of CHF3 reaction beam etching photoresist, the side wall substrate profile could be obtained.
The evolution law of the fiber grating etching is studied, which quite consistent with the experiment result. Focusing on the problem of controlling groove depth and duty cycle the process of CHF3 reaction beam etching, one method of combination ion beam etching and reaction ion beam etching is proposed, which is applied in controlling groove depth and duty cycle, moreover ,this method could be well adapted to photoresist grating mask of lager fringe density and provide feasible etching scheme for ion beam etching of fiber grating phase mask.
引文
1 任延同,离子刻蚀技术与未来发展。光学精密工程,1998,2(6):7-15
2 S.J Pearton,U.K.Chakrabarti,A.P.Perley et al.Ion milling damage in InP and GaAs.J.Appl.Phys.1990,68(5):2760-2768
3 S.W.Pang,D.D.Rathman,D.J.Silversmith et al.Damage induced in Si by milling or reactive ion etching[J].J.Appl.Phys.1983,54(6):3272-3277
4 A.R.Neureuther,Process modeling and simulation tools[J].J.Vae.Sci.Technol.,1986,4(3):912-915
5 Youngner,D.W.,Haynes,C.M.Modeling ion beam milling Journal of Vacuum Science and Technology,v 21,n 2,July-Aug.1982,p 677-80
6 S.M.Rosnagel and R.S.Robinson,Monte Carlo model of topography development during sputtering[J].J.Vae.Sci.Technol.A,1983,1(2):426-429
7 Sigrnund.P.Theory of sputtering.I.Sputtering field of amorphous and polyerystalline targets[J].Physical Review.1969,184(2):383-415
8 Marc Madou.Fundamental of Microfabrication[M].CRC press,New York,1997
9 Scheer.H-C.Ion sources for dry etching Aspects of reactive ion beam etching for Si technology[J].Rev.Sci.Instrum.63(5),1992:3050-3057
10 Kaufman.H.R.,J.J.Cuomo and J.M.E.Harper.Technology and applications of broad-beam ion sources used in sputtering.PartⅠIon source technology[J].J.Vac.Sci.Teehnol.,21(3),1982:p725-736
11 刘金声,离子束技术及应用[M],国防工业出版社,北京,1996
12 王平,杨银堂,徐新艳等,应用于超大规模集成电路工艺的高密度等离子体源研究进展[J],真空科学与技术,2002,22(4),274
13 王旭迪,几种光学材料的离子束刻蚀微结构研究(博士学位论文),2005.05
14 Schneider.St,Jolly.T.W,Kohlstedt.H et al.Use of reactive gases with broad-beam radio frequency ion sources for industrial applications[J].J.Vac.Sci.Technol.A 2004,22(4):1493-1499
15 Michael Zeuner, Jurgen Meichsner, Horst Neumann et al. Design of ion energy distributions by a broad beam ion source [J]. J. Appl. Phys. 1996, 80 (2), 611-622
16 Michael Zeuner, Jurgen Meichsner, Horst Neumann et al. Characterization of a modular broad beam ion source [J]. Plasma Sources Sci. Technol. 7 (1998) 252-267
17 Marc Madou. Fundamental of Microfabrication [M]. CRC press, New York, 1997
18 C.M.Melliar-Smith. Ion etching for pattern delineation [J]. J. Vac. Sci. Technol. 1976, 13(5): 1008-1022
19 Somekh. Introduction to ion and plasma etching [J]. J. Vac. Sci. Technol. 1976, 13(5): 1003-1007
20 H.W. Lehmann and R. Widmer. Dry etching for pattern transfer [J]. J. Vac. Sci. Technol. 1980,17(5): 1177-1183
21 P.G. Gloersen. Ion-beam etching [J]. J. Vac. Sci. Technol. 1975,12(1): 28-35
22 A.R. Neureuther, C.Y. Liu and C.H. Ting. Modeling ion milling [J]. J. Vac. Sci. Technol. 1980,16(5): 1767-1771
23. H. Dimigen, H. Luthje, H. Hubsch et al. Influence of mask materials on ion-etched structures [J]. J. Vac. Sci. Technol. 1976,13(4): 976-980
24 I.V. Katardjiev, G. Carter and M.J. Nobes. Precision modeling of the mask-substrate evolution during ion etching [J]. J. Vac. Sci. Technol. 1988, A 6(4): 2443-2450
25 Robert E. Lee. Microfabrication by ion-beam etching [J]. J. Vac. Sci. Technol. 1979,16(2):164-170
26 R. Hsiao. Fabrication of magnetic recording heads and dry etching of head materials [J]. IBM J. Res Develop. 1999,43(1-2):89-112
27 S. Somekh. Introduction to ion and plasma etching [J]. J. Vac. Sci. Technol. 1976, 13(5): 1003-1007
28 I.V. Katardjiev, G. Carter and M.J. Nobes. Precision modeling of the mask-substrate evolution during ion etching [J]. J. Vac. Sci. Technol. 1988, A 6(4): 2443-2450
29 J. Ducommun,M. Cantagrel, and M. Marchal. Development of a general surface contour by ion erosion: theory and computer simulation [J]. J. Mater. Sci. 1974, 9: 725-736
30 J.Ducommun,M.Cantagrel,and M.Moulin.Evolution of well-defined surface contour sumitted to ion bombardment:computer simulation and experimental investigation[J].J.Mater.Sci.1975,10:52-61
31 Eric J.Klein and W.Fred Ramirez.Consideration of local shadowing and ion beam voltage effects in the prediction of a surface evolving under ion milling[J].J.Vac.Sci.Technol.A.2000,18(1):166-175
32 I.W.Rangelow.Computer simulation of line edge profiles undergoing ion bombardment[J].J.Vac.Sci.Technol.A.1983,1(2):410-414
33 方玲玲 光纤光栅相位掩模的设计及其制作(硕士学位论文)2006,4
34 方玲玲,吴建宏,刘全,陈刚.线性啁啾相位掩模的设计及制作[J].光电工程,2006,33(11):88-92
35 祝绍箕,邹海兴,包学诚 等.衍射光栅[M].北京:机械工业出版社,1986
36 R.Smith and M.A.Tagg.An algorithm to calculate secondary sputtering by the reflection of ions in two dimensions.[J].Pergamon journals,1986,36(5):285-288
37 Noriyoshi Yamauchi,Toshiaki Yachi,and tsutomu wada.A pattern edge profile simulation for oblique ion milling.[J].VAC.Sci.Technol.1984 A2(4).
38 L.F.johnson,Evolution of grating profiles under ion-beam erosion.[J].Applied Optical 1979,18(15).
39 J.P.Ducommun M.Cantagrel and M.Moulin,Evolution of well-defined surface contour submitted to ion bombardment:computer simulation and experimental investigation.[J].Journal of materials science,1975(10):52-62.
40 Quan Liu,Jian Hong Wu,LingLing Fang and chaoming Li.Fabrication of phase Mask for Optical Fiber Grating[J].key Engineering Materials,2008,364-366:719-723
41 周再发 用元胞自动机方法模拟硅的各向异性腐蚀(硕士学位论文)2004,5
42 S.M.Rosnagel and R.S.Robinson.Monte Carlo model of topography development durings puttering[J].J.Vac.sci.Technol.A.1983,1(2):426-429
43 I.W.Rangelow,k.Mabeli,L.Niewohner etal.SIMS and AES investgivations of comtamination effects by RIE of PIQ layer[J]Microelectronic engineering,1985,(3):475-48
44 D.Adalstensson and J.A.Sethian.A Fast Level Set method for propagating Interfaces [J].J.com.phy.1995,118:269-277
45 D.Adalstensson and J.A.Sethian.A Level set approach to a unified model for etching Deposition and lithography I Algorithms and two-dimensional simulations [J].J.comp.phy.1995,120:128-144
2 S.J Pearton,U.K.Chakrabarti,A.P.Perley et al.Ion milling damage in InP and GaAs.J.Appl.Phys.1990,68(5):2760-2768
3 S.W.Pang,D.D.Rathman,D.J.Silversmith et al.Damage induced in Si by milling or reactive ion etching[J].J.Appl.Phys.1983,54(6):3272-3277
4 A.R.Neureuther,Process modeling and simulation tools[J].J.Vae.Sci.Technol.,1986,4(3):912-915
5 Youngner,D.W.,Haynes,C.M.Modeling ion beam milling Journal of Vacuum Science and Technology,v 21,n 2,July-Aug.1982,p 677-80
6 S.M.Rosnagel and R.S.Robinson,Monte Carlo model of topography development during sputtering[J].J.Vae.Sci.Technol.A,1983,1(2):426-429
7 Sigrnund.P.Theory of sputtering.I.Sputtering field of amorphous and polyerystalline targets[J].Physical Review.1969,184(2):383-415
8 Marc Madou.Fundamental of Microfabrication[M].CRC press,New York,1997
9 Scheer.H-C.Ion sources for dry etching Aspects of reactive ion beam etching for Si technology[J].Rev.Sci.Instrum.63(5),1992:3050-3057
10 Kaufman.H.R.,J.J.Cuomo and J.M.E.Harper.Technology and applications of broad-beam ion sources used in sputtering.PartⅠIon source technology[J].J.Vac.Sci.Teehnol.,21(3),1982:p725-736
11 刘金声,离子束技术及应用[M],国防工业出版社,北京,1996
12 王平,杨银堂,徐新艳等,应用于超大规模集成电路工艺的高密度等离子体源研究进展[J],真空科学与技术,2002,22(4),274
13 王旭迪,几种光学材料的离子束刻蚀微结构研究(博士学位论文),2005.05
14 Schneider.St,Jolly.T.W,Kohlstedt.H et al.Use of reactive gases with broad-beam radio frequency ion sources for industrial applications[J].J.Vac.Sci.Technol.A 2004,22(4):1493-1499
15 Michael Zeuner, Jurgen Meichsner, Horst Neumann et al. Design of ion energy distributions by a broad beam ion source [J]. J. Appl. Phys. 1996, 80 (2), 611-622
16 Michael Zeuner, Jurgen Meichsner, Horst Neumann et al. Characterization of a modular broad beam ion source [J]. Plasma Sources Sci. Technol. 7 (1998) 252-267
17 Marc Madou. Fundamental of Microfabrication [M]. CRC press, New York, 1997
18 C.M.Melliar-Smith. Ion etching for pattern delineation [J]. J. Vac. Sci. Technol. 1976, 13(5): 1008-1022
19 Somekh. Introduction to ion and plasma etching [J]. J. Vac. Sci. Technol. 1976, 13(5): 1003-1007
20 H.W. Lehmann and R. Widmer. Dry etching for pattern transfer [J]. J. Vac. Sci. Technol. 1980,17(5): 1177-1183
21 P.G. Gloersen. Ion-beam etching [J]. J. Vac. Sci. Technol. 1975,12(1): 28-35
22 A.R. Neureuther, C.Y. Liu and C.H. Ting. Modeling ion milling [J]. J. Vac. Sci. Technol. 1980,16(5): 1767-1771
23. H. Dimigen, H. Luthje, H. Hubsch et al. Influence of mask materials on ion-etched structures [J]. J. Vac. Sci. Technol. 1976,13(4): 976-980
24 I.V. Katardjiev, G. Carter and M.J. Nobes. Precision modeling of the mask-substrate evolution during ion etching [J]. J. Vac. Sci. Technol. 1988, A 6(4): 2443-2450
25 Robert E. Lee. Microfabrication by ion-beam etching [J]. J. Vac. Sci. Technol. 1979,16(2):164-170
26 R. Hsiao. Fabrication of magnetic recording heads and dry etching of head materials [J]. IBM J. Res Develop. 1999,43(1-2):89-112
27 S. Somekh. Introduction to ion and plasma etching [J]. J. Vac. Sci. Technol. 1976, 13(5): 1003-1007
28 I.V. Katardjiev, G. Carter and M.J. Nobes. Precision modeling of the mask-substrate evolution during ion etching [J]. J. Vac. Sci. Technol. 1988, A 6(4): 2443-2450
29 J. Ducommun,M. Cantagrel, and M. Marchal. Development of a general surface contour by ion erosion: theory and computer simulation [J]. J. Mater. Sci. 1974, 9: 725-736
30 J.Ducommun,M.Cantagrel,and M.Moulin.Evolution of well-defined surface contour sumitted to ion bombardment:computer simulation and experimental investigation[J].J.Mater.Sci.1975,10:52-61
31 Eric J.Klein and W.Fred Ramirez.Consideration of local shadowing and ion beam voltage effects in the prediction of a surface evolving under ion milling[J].J.Vac.Sci.Technol.A.2000,18(1):166-175
32 I.W.Rangelow.Computer simulation of line edge profiles undergoing ion bombardment[J].J.Vac.Sci.Technol.A.1983,1(2):410-414
33 方玲玲 光纤光栅相位掩模的设计及其制作(硕士学位论文)2006,4
34 方玲玲,吴建宏,刘全,陈刚.线性啁啾相位掩模的设计及制作[J].光电工程,2006,33(11):88-92
35 祝绍箕,邹海兴,包学诚 等.衍射光栅[M].北京:机械工业出版社,1986
36 R.Smith and M.A.Tagg.An algorithm to calculate secondary sputtering by the reflection of ions in two dimensions.[J].Pergamon journals,1986,36(5):285-288
37 Noriyoshi Yamauchi,Toshiaki Yachi,and tsutomu wada.A pattern edge profile simulation for oblique ion milling.[J].VAC.Sci.Technol.1984 A2(4).
38 L.F.johnson,Evolution of grating profiles under ion-beam erosion.[J].Applied Optical 1979,18(15).
39 J.P.Ducommun M.Cantagrel and M.Moulin,Evolution of well-defined surface contour submitted to ion bombardment:computer simulation and experimental investigation.[J].Journal of materials science,1975(10):52-62.
40 Quan Liu,Jian Hong Wu,LingLing Fang and chaoming Li.Fabrication of phase Mask for Optical Fiber Grating[J].key Engineering Materials,2008,364-366:719-723
41 周再发 用元胞自动机方法模拟硅的各向异性腐蚀(硕士学位论文)2004,5
42 S.M.Rosnagel and R.S.Robinson.Monte Carlo model of topography development durings puttering[J].J.Vac.sci.Technol.A.1983,1(2):426-429
43 I.W.Rangelow,k.Mabeli,L.Niewohner etal.SIMS and AES investgivations of comtamination effects by RIE of PIQ layer[J]Microelectronic engineering,1985,(3):475-48
44 D.Adalstensson and J.A.Sethian.A Fast Level Set method for propagating Interfaces [J].J.com.phy.1995,118:269-277
45 D.Adalstensson and J.A.Sethian.A Level set approach to a unified model for etching Deposition and lithography I Algorithms and two-dimensional simulations [J].J.comp.phy.1995,120:128-144