MnSi_（1.7）薄膜热电性能研究
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摘要
本文对n型和p型MnSi_(1.7)薄膜进行了俄歇谱分析,研究了化学位移和薄膜电学性能之间的关系。和纯Mn相比,p型和n型MnSi_(1.7)薄膜样品的Mn[MVV]峰分别有+2.0和+7.0 eV的化学位移。与纯Mn [LMM]的峰位在545、592、638 eV处相比,p型和n型MnSi_(1.7)薄膜的545 eV的峰位都没有改变;592 eV的峰位都有-0.5 eV的化学位移;p型MnSi_(1.7)薄膜的638 eV的峰位有+0.5 eV的位移,而n型MnSi_(1.7)薄膜的638 eV的峰位没有位移。在用磁控溅射制备的两个样品中,出现了Mn[MVV]谱中50 eV、Mn [LMM]谱中600、654、705 eV的新的峰位,这些峰在n型样品中更强,这可能与薄膜中含有Fe杂质有关。与纯Si相比,n型和p型样品的Si[LVV]峰均有+1.0 eV的化学位移。
利用磁控溅射镀膜的方法对n型MnSi_(1.7)薄膜进行了C掺杂,掺杂后样品还是n型。但是,样品的Seebeck系数和电阻率发生了变化。当样品掺入C后,Seebeck系数略有增加,电阻率减小,导致功率因子明显提高。当样品掺入量-碳薄膜厚度为2 nm时,功率因子在温度683 K时最大可达1048μW/m-K~2,已接近p型体材料的数值。
利用电子束蒸发制备了14~27 nm厚度的MnSi_(1.7)薄膜。与文献上报道的p型MnSi_(1.7)体材料和薄膜不同,大部分纳米尺寸薄膜在室温下是p型的,随温度升高会变为n型。对这些纳米尺寸的MnSi_(1.7)薄膜样品进行Fe掺杂,当掺杂Fe含量-FeSi_2薄膜的厚度为11 nm时,样品表现为n型半导体性质。掺杂后,样品电阻率降低,这与Fe杂质所起的作用有关。样品掺杂Fe后,Seebeck系数增加,在温度483 K时Seebeck系数为-662μV/K,同时,功率因子也有明显提高,在533 K时已达到5133μW/m-K~2。当薄膜厚度为14 nm时,尽管没有铁掺杂,但是样品是n型的,在483 K时,Seebeck系数有最大值-967μV/K。如此大的Seebeck系数可能与低维半导体中费米能级附近的态密度有所增大有关。
P-and n-type higher manganese silicide (MnSi_(1.7)) films are characterized by Auger electron spectroscopy (AES). The relationship between Auger chemical shift and electrical property of the film has been established. Compared with pure Mn, the peak positions of Mn [MVV] Auger spectra in p- and n-type MnSi_(1.7) films move to higher energy regions with +2.0 and +7.0 eV, respectively. Compared with pure Mn [LMM] Auger peaks at 545, 592, and 638 eV, the peak at 545 eV remains unchanged while the one at 592 eV moves to a lower energy region with -0.5 eV for both p- and n-type MnSi_(1.7) films. The peak at 638 eV moves to a higher energy region with +0.5 eV for p-type MnSi_(1.7) film and remains unchanged for n-type MnSi_(1.7) film, respectively. New peaks around 50 eV in the Mn [MVV] Auger spectra, and 600, 654, and 705 eV in the Mn [LMM] Auger spectra appear in MnSi_(1.7) films prepared by magnetron sputtering. The new peaks have much stronger intensities for the n-type MnSi_(1.7) film. These new peaks are considered to arise from iron impurities. Compared with the pure Si, the peak position of Si [LVV] Auger spectra move to higher energy regions with + 1.0 eV for both p- and n-type MnSi_(1.7) films.
N-type MnSi_(1.7) films with addition of carbon are prepared by magnetron sputtering. With addition of carbon, the film is still n-type. With addition of carbon, the Seebeck coefficient increases a little while the resistivity decreases. As a result, the thermoelectric power factor increases. When the thickness of the carbon layer is 2 nm, the power factor reaches to 1048μW/m-K~2 at 683 K. This value is close to that of p-type bulk material.
Nanoscale MnSi_(1.7) films with thicknesses between 14 and 27 nm are prepared by electron beam evaporation. Contrary to the p-type conductivity for MnSi_(1.7) bulk materials and thin films reported in the open literature, the carriers of these nanoscale films are p-type around room temperature and transform to n-type at high temperatures. With addition of iron, the film becomes n-type. When the thickness of the FeSi_2 layer is 11 nm, the electrical resistivity of the nanoscale film decreases and the Seebeck coefficient increases. As a result, the thermoelectric power factor increases greatly. The Seebeck coefficient can reach to -662μV/K at 483 K, while the power factor can reach to 5133μW/m-K~2 at 533 K. When the thickness of the nanoscale film is 14 nm, a n-type film is prepared. The thermoelectric power reaches to - 967μV/K at 483 K. The large thermoelectric power may be due to the increase in the electronic density of states in low-dimensional semiconductors.
利用磁控溅射镀膜的方法对n型MnSi_(1.7)薄膜进行了C掺杂,掺杂后样品还是n型。但是,样品的Seebeck系数和电阻率发生了变化。当样品掺入C后,Seebeck系数略有增加,电阻率减小,导致功率因子明显提高。当样品掺入量-碳薄膜厚度为2 nm时,功率因子在温度683 K时最大可达1048μW/m-K~2,已接近p型体材料的数值。
利用电子束蒸发制备了14~27 nm厚度的MnSi_(1.7)薄膜。与文献上报道的p型MnSi_(1.7)体材料和薄膜不同,大部分纳米尺寸薄膜在室温下是p型的,随温度升高会变为n型。对这些纳米尺寸的MnSi_(1.7)薄膜样品进行Fe掺杂,当掺杂Fe含量-FeSi_2薄膜的厚度为11 nm时,样品表现为n型半导体性质。掺杂后,样品电阻率降低,这与Fe杂质所起的作用有关。样品掺杂Fe后,Seebeck系数增加,在温度483 K时Seebeck系数为-662μV/K,同时,功率因子也有明显提高,在533 K时已达到5133μW/m-K~2。当薄膜厚度为14 nm时,尽管没有铁掺杂,但是样品是n型的,在483 K时,Seebeck系数有最大值-967μV/K。如此大的Seebeck系数可能与低维半导体中费米能级附近的态密度有所增大有关。
P-and n-type higher manganese silicide (MnSi_(1.7)) films are characterized by Auger electron spectroscopy (AES). The relationship between Auger chemical shift and electrical property of the film has been established. Compared with pure Mn, the peak positions of Mn [MVV] Auger spectra in p- and n-type MnSi_(1.7) films move to higher energy regions with +2.0 and +7.0 eV, respectively. Compared with pure Mn [LMM] Auger peaks at 545, 592, and 638 eV, the peak at 545 eV remains unchanged while the one at 592 eV moves to a lower energy region with -0.5 eV for both p- and n-type MnSi_(1.7) films. The peak at 638 eV moves to a higher energy region with +0.5 eV for p-type MnSi_(1.7) film and remains unchanged for n-type MnSi_(1.7) film, respectively. New peaks around 50 eV in the Mn [MVV] Auger spectra, and 600, 654, and 705 eV in the Mn [LMM] Auger spectra appear in MnSi_(1.7) films prepared by magnetron sputtering. The new peaks have much stronger intensities for the n-type MnSi_(1.7) film. These new peaks are considered to arise from iron impurities. Compared with the pure Si, the peak position of Si [LVV] Auger spectra move to higher energy regions with + 1.0 eV for both p- and n-type MnSi_(1.7) films.
N-type MnSi_(1.7) films with addition of carbon are prepared by magnetron sputtering. With addition of carbon, the film is still n-type. With addition of carbon, the Seebeck coefficient increases a little while the resistivity decreases. As a result, the thermoelectric power factor increases. When the thickness of the carbon layer is 2 nm, the power factor reaches to 1048μW/m-K~2 at 683 K. This value is close to that of p-type bulk material.
Nanoscale MnSi_(1.7) films with thicknesses between 14 and 27 nm are prepared by electron beam evaporation. Contrary to the p-type conductivity for MnSi_(1.7) bulk materials and thin films reported in the open literature, the carriers of these nanoscale films are p-type around room temperature and transform to n-type at high temperatures. With addition of iron, the film becomes n-type. When the thickness of the FeSi_2 layer is 11 nm, the electrical resistivity of the nanoscale film decreases and the Seebeck coefficient increases. As a result, the thermoelectric power factor increases greatly. The Seebeck coefficient can reach to -662μV/K at 483 K, while the power factor can reach to 5133μW/m-K~2 at 533 K. When the thickness of the nanoscale film is 14 nm, a n-type film is prepared. The thermoelectric power reaches to - 967μV/K at 483 K. The large thermoelectric power may be due to the increase in the electronic density of states in low-dimensional semiconductors.
引文
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