ZnO基透明导电薄膜的制备及性能优化
|
摘要
透明导电薄膜是一种把透明性和导电性相结合的功能薄膜材料,广泛应用于液晶显示器、太阳能电池、节能玻璃等光电领域。在这类材料中,ZnO透明导电薄膜不仅具有良好的光电性能,而且原材料丰富,价格便宜,无毒无污染,在氢等离子环境中稳定性好,是一种最有希望替代ITO的透明导电氧化物。
本文采用射频磁控溅射制备F掺杂ZnO (FZO)透明导电薄膜,重点研究了溅射气压、溅射温度等工艺参数对薄膜性能的影响。为了获得更好的薄膜光电性能,我们采用直流磁控技术与射频磁控技术相结合的方法制备了FZO/Ag/FZO多层结构透明导电薄膜,重点研究了Ag层厚度对薄膜性能的影响。通过实验研究主要得到以下结果：
1.采用射频磁控溅射FZO陶瓷靶,在玻璃衬底上制备了FZO透明导电薄膜。当F含量(3at.%)、溅射压强(0.7Pa)、溅射功率(100W)等工艺参数一定时,关键在于控制溅射温度。在溅射温度为350℃时,薄膜性能达到最佳；此时FZO透明导电薄膜的电阻率为6.24×10-2Ωcm, Hall迁移率和载流子浓度分别为1.64cm2/Vs和8.96×1019cm-3,透射率达90%,品质因子最高为1.68×10-4Ω-1。
2.室温条件下在玻璃衬底上制备了FZO/Ag/FZO透明导电薄膜,重点研究了Ag层厚度对多层膜各项性能的影响。随着Ag层厚度的变化,FZO/Ag/FZO透明导电薄膜透明导电薄膜的结构形貌、电学性能和光学性能也发生相应变化。当Ag层厚度控制在8nm左右,制备得到了综合性能最佳的透明导电薄膜,在可见光波段的平均透射率高达90%,电阻率为5.65×10-5Ω-·cm,方块电阻为4.71Ω/sq,载流子浓度为6.49×1021cm-3,Hall迁移率为17cm2/Vs,品质因子高达7.41×10-2Ω-1。
3.室温条件下在PC柔性衬底上制备了FZO/Ag/FZO透明导电薄膜,并与Ag/FZO和FZO/Ag双层膜进行性能比较。重点研究Ag层的沉积时间对这三种透明导电薄膜性能的影响。Ag层沉积时间对FZO/Ag/FZO透明导电薄膜光电性能有重要影响,随着Ag层沉积时间的增长,电学性能逐渐提高,可见光波段的透射率先增大后减小。
Transparent conductive films are functional film material widely used in photoelectronic devices such as liquid crystal display, solar cell, and energy-saving glass, etc. Among this kind of materials within the category, ZnO shows high visible transmittance combined great conductivity and is a promising alternative to ITO due to its abundance in nature, low cost, relatively low deposition temperature, and stability in hydrogen plasma.
F-doped ZnO (FZO) transparent conductive thin films were grown by RF magnetron sputtering at different temperature in our work. The influence of deposition pressure and temperature on the film properties is studied. In order to achieve better electrical property, FZO/Ag/FZO multilayer thin films were prepared with both use of RF and DC magnetron sputtering, and the effect of Ag layer thickness on the multilayer film properties was investigated. The main results are obtained as follow:
1. FZO thin films were prepared on glass substrates by RF magmetron sputtering from a FZO ceramic target at room temperature. It's critical to optimize the deposition temperature while other key factors such as F content (3at.%), deposition pressure (0.7Pa), power(100W) are fixed. FZO thin films grown at 350℃have the best properties and the lowest resistivity is 6.24×10-2Ωcm. The best mobility and highest carrier concentration is 1.64cm2/Vs and 8.96×1019cm-3 separately. The optimized figure of merit (φTC) of 1.68×10-4Ω-1 is obtained with the visible transmittance above 90%.
2. FZO/Ag/FZO transparent conductive thin films were prepared on the glass substrate at room temperatue. The influence of Ag thickness was mainly studied. The Ag thickness shows great influence on the morphology and photoelectrical properties. The most optimized multilayer thin film is prepared with the Ag layer thickness at 8nm. The average visible transmittance is 90% and the figure of merit is 7.41×10-2Ω-1.
3. FZO/Ag/FZO multilayer thin films were prepared on the PC flexible substrates at room temperature, which was compared with FZO/Ag and Ag/FZO bi-layers in properties. The effect of Ag layer deposition time is mainly investigated which turns out playing an important role in the photoelectrical perfoermance.
本文采用射频磁控溅射制备F掺杂ZnO (FZO)透明导电薄膜,重点研究了溅射气压、溅射温度等工艺参数对薄膜性能的影响。为了获得更好的薄膜光电性能,我们采用直流磁控技术与射频磁控技术相结合的方法制备了FZO/Ag/FZO多层结构透明导电薄膜,重点研究了Ag层厚度对薄膜性能的影响。通过实验研究主要得到以下结果：
1.采用射频磁控溅射FZO陶瓷靶,在玻璃衬底上制备了FZO透明导电薄膜。当F含量(3at.%)、溅射压强(0.7Pa)、溅射功率(100W)等工艺参数一定时,关键在于控制溅射温度。在溅射温度为350℃时,薄膜性能达到最佳；此时FZO透明导电薄膜的电阻率为6.24×10-2Ωcm, Hall迁移率和载流子浓度分别为1.64cm2/Vs和8.96×1019cm-3,透射率达90%,品质因子最高为1.68×10-4Ω-1。
2.室温条件下在玻璃衬底上制备了FZO/Ag/FZO透明导电薄膜,重点研究了Ag层厚度对多层膜各项性能的影响。随着Ag层厚度的变化,FZO/Ag/FZO透明导电薄膜透明导电薄膜的结构形貌、电学性能和光学性能也发生相应变化。当Ag层厚度控制在8nm左右,制备得到了综合性能最佳的透明导电薄膜,在可见光波段的平均透射率高达90%,电阻率为5.65×10-5Ω-·cm,方块电阻为4.71Ω/sq,载流子浓度为6.49×1021cm-3,Hall迁移率为17cm2/Vs,品质因子高达7.41×10-2Ω-1。
3.室温条件下在PC柔性衬底上制备了FZO/Ag/FZO透明导电薄膜,并与Ag/FZO和FZO/Ag双层膜进行性能比较。重点研究Ag层的沉积时间对这三种透明导电薄膜性能的影响。Ag层沉积时间对FZO/Ag/FZO透明导电薄膜光电性能有重要影响,随着Ag层沉积时间的增长,电学性能逐渐提高,可见光波段的透射率先增大后减小。
Transparent conductive films are functional film material widely used in photoelectronic devices such as liquid crystal display, solar cell, and energy-saving glass, etc. Among this kind of materials within the category, ZnO shows high visible transmittance combined great conductivity and is a promising alternative to ITO due to its abundance in nature, low cost, relatively low deposition temperature, and stability in hydrogen plasma.
F-doped ZnO (FZO) transparent conductive thin films were grown by RF magnetron sputtering at different temperature in our work. The influence of deposition pressure and temperature on the film properties is studied. In order to achieve better electrical property, FZO/Ag/FZO multilayer thin films were prepared with both use of RF and DC magnetron sputtering, and the effect of Ag layer thickness on the multilayer film properties was investigated. The main results are obtained as follow:
1. FZO thin films were prepared on glass substrates by RF magmetron sputtering from a FZO ceramic target at room temperature. It's critical to optimize the deposition temperature while other key factors such as F content (3at.%), deposition pressure (0.7Pa), power(100W) are fixed. FZO thin films grown at 350℃have the best properties and the lowest resistivity is 6.24×10-2Ωcm. The best mobility and highest carrier concentration is 1.64cm2/Vs and 8.96×1019cm-3 separately. The optimized figure of merit (φTC) of 1.68×10-4Ω-1 is obtained with the visible transmittance above 90%.
2. FZO/Ag/FZO transparent conductive thin films were prepared on the glass substrate at room temperatue. The influence of Ag thickness was mainly studied. The Ag thickness shows great influence on the morphology and photoelectrical properties. The most optimized multilayer thin film is prepared with the Ag layer thickness at 8nm. The average visible transmittance is 90% and the figure of merit is 7.41×10-2Ω-1.
3. FZO/Ag/FZO multilayer thin films were prepared on the PC flexible substrates at room temperature, which was compared with FZO/Ag and Ag/FZO bi-layers in properties. The effect of Ag layer deposition time is mainly investigated which turns out playing an important role in the photoelectrical perfoermance.
引文
[1]Y. Q. Li, J. X. Tang, Z. Y. Xie, L. S. Huang, and S. S. Lau. An Efficient Organic Light-emitting Diode with Silver Electrode. Chemical Physics Letters,2004,386 (1-3):128-131.
[2]D. S. Ghosh, T. L. Chen, and V Pruned. Ultrathin Cu-Ti Bilayer Transparent Conductors with Enhanced Figure-of-merit and Stability. Applied physics Letters,2010,96 (9):091106.
[3]H. Klauk, J. R.. Huang, J. A. Nichols, T. N. Jackson. Ion-beam-deposited Ultrathin Transparent Metal Contacts. Thin Solid Films,2000,366 (1-2):3108-3117.
[4]Ando E, Miyazaki M, Moisture Resistance of The Low-emissivity Coatings with A Layer Structure of Al-doped ZnO/Ag/Al-doped ZnO. Thin Solid Films,2001,392(1-2):289-293
[5]李镇涛,王振加,赵大庆,ZAO/metal/ZAO多层膜光学性能优化设计,材料科学与工程学报,2004,22(4)：495-499.
[6]Yang J S, Seong H Y, Keum M J. Preparation of Transparent Conductive Films by Facing Targets Sputtering System. Surface and Coating Technology,2003,169-170:57.
[7]X. J. Liu, X. Cai, J. S. Qiao, J. F. Mao, and N. Jiang. The Design of ZnS/Au/ZnS Transparent Conductive Multilayer Films. Thin Solid Films,2003,441(1-2):200-206.
[8]H. N. Cui, V. Teixeira, L. J. Meng, R. Martins, and E. Fortunate Influence of Oxygen-Argon Pressure Ratio on the Morphology, Optical and Electrical Properties of ITO Films Deposited by RF at Room Temperature. Vacuum,2008,82(12):1507-1511.
[9]A de Graaf, J. van. Deelen, P. Poodt, Ton van Mol, K. Spee, F. Grob, and A. Kuypers. Development of Atmosphere Pressure CVD Processes for High Quality Transparent Conductive Oxides. Energy Procedia, 2000,2(1):41-48.
[10]J. Yoo, J. Lee, S. Kim, K. Yoon, I. J. Park, S. K. Dhungel, B. Karunagaran, D Mangalaraj, and J. Yi. High Transmittance and Low Resistive ZnO:Al Films for Thin Films for Thin Film Solar Cells. Thin Solid Films,2005,480(Sp. Iss. SI):213-217.
[11]P. Prete, R. Clingolani, D. Greco, et al. Exciton spectroscopy in Znl-xCdxSe/ZnSe quantum wells. Phys. Rev. B,1995,51,5176-518
[12]N. Pelekanos, J. Ding, M. Hagerott, et al. Quasi-two-dimensional excitons in (Zn,Cd)Se/ZnSe quantum wells:Reduced exciton-LO-phonon coupling due to confinement effects. Phys. Rev. B (1992) 45, 6037-6042.
[13]U. Ozgur, Y.I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc. A Comprehensive Review of ZnO Materials and Devices. Journal of Applied Physics,2005,98 (4):041301-1-103.
[14]S. B. Zhang, S. H. Wei, and A. Zunger. Intrinsic n-type Doping Asymmetry and the Defact Physics of ZnO. Physical Review B,2001,63 (7):075205-1-7.
[15]M. D. McCluskey and S. J. Jokela. Dedects in ZnO. Journal of Applied Physics,2009,106 (7): 071101-1-13.
[16]A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle. First-principles Study of Native Point Defects in ZnO. Physical Review B.2000.61 (22):15019-15027.
[17]A. Janotti and C. G. Van de Walle. Absolute Deformation Potentials and Band Alignment of WurtziteZnO. MgO, and CdO. Physical Review B,2007,75 (12):121201-1-4.
[18]L. S. Vlasenko and G. D. Watkins. Optical Detection of Electron Paramagnetic Resonance for Intrinsic Defects Produced in ZnO by 2.5-MeV Electron Irradiation in Situ at 4.2 K. Physical Review B,2005,72 (3):035203-1-12.
[19]P. Banerjee, W. J. Lee, K. R. Bae, S. B. Lee and G. W. Rubloff. Structural, Electrical, and Optical Properties of Atomic Layer Deposition Al-doped ZnO Flims. Journal of Applied Physics,2010,108 (4): 043504-1-7.
[20]B. Nasr, S. Dasgupta, D. Wang, N. Mechau, R. Kruk and H. Hahn. Electrical Resistivity of Nanocrystalline Al-doped Zink Oxide Films as a Function of Al Content and the Degree of Its Segregation at the Grain Boundaries. Journal of Applied Physics,2010,108 (10):103721-6.
[21]M. Hisao, S. Yasushi, Y. Naoki and Y. Tetsuya. Changes in Electrical and Optical Properties of Polycrystalline Ga-doped ZnO Thin Films Due to Thermal Desorption of Zink. Thin Solid Films,2011, 520(5):1407-1410
[22]C. Y. Tsay, K. S. Fan, C. M. Lei. Synthesis and Characterization of Sol-gel Derived Gallium-doped Zinc Oxide Thin Flims. Journal of Alloys and Compounds,2012,512 (1):216-222.
[23]S. Chirakkara, K. K. Nanda, S. B. Krupanidhi. Plused Laser Peposited ZnO:In as Transparent Conducting Oxide. Thin Solid Films,2011,519 (11):3627-3652.
[24]T. Serin, A. Yildiz, S. Uzun, E. Cam and N. Serin. Electrical Conduction Proerties do In-doped ZnO Thin Films. Physics Scripta,2011,84 (6):065703-1-6.
[25]J. T. Luo, X. Y. Zhu, G. Chen, F. Zeng and H. Pan. The Electrical, Optical and Magnetic Properties of Si-doped ZnO Films. Applied Surface Science,2012,258 (6):2177-2181.
[26]S. Llican, M. Caglar, Y. Caglar. Sn Doping Effects on the Electro-optical Properties of Sol-gel Derived Transparent ZnO Films. Applied Surface Science,2010,195 (17):7204-7210.
[27]L. Cao, L. P. Zhu, R. Zhao, Z. Z. Ye, B. H. Zhao. Highly Transparent and Conducting Fluorine-doped ZnO Thin. Films Prepared by Pulsed Laser Deposition. Solar Energy Materials and Solar Cells.2011,95 (3):894-898
[28]G. M. Nam, M. S. Kwon. F-doped ZnO by Sol-gel Spin-coating As a Transparent Conducting Thin Film. Electronic Materials,2011,7 (2):127-131.
[29]X. H. Pan, Z. Z. Ye, H. S. Li, Y. J. Zeng, X. Q Gu, L. P. Zhu, B. H. Zhao and Y. Che. Fabrication of P-type ZnMgO Films via Pulsed Laser Deposition Method by Using Li As Dopant Source. Applied Surface Science,2007,253 (14):6060-6062.
[30]X. H. Pan, Z. Z. Ye, J. Y. Huang, Y. J. Zeng, H. P. He, X. Q. Gu, L. P. Zhu and B. H. Zhao. P-type Behavior in Li-doped Zno.9Mgo.1O Thin Films. Journal of Crystal Growth,2008,310 (6):1029-1033.
[31]M. X. Qiu, X. Q. Gu, Z. Z. Ye, J. G. Lu, H. P. He, Y. Z. Zhang and B. H. Zhao. P-type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-lithium Codopd Zn0.11Mg0.89O Thin Films. Journal of Vacuum Science and Technology B,2009,27 (4):1897-1900.
[32]X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che and X. Q. Pan. Preparation of P-type ZnMgO Thin Films by Sb Doping Method. Journal of Physics D-Applied Physics, 2009,40 (14):4241-4244.
[33]J. J. Lai, Y. J. Lin, Y. H. Chen, H. C. Chang, C. J. Liu, Y. Y. Zou, Y. T. Shih and M. C. Wang. Effects of Na Contact on the Luminescence Behavior, Conduction Type, and Crystal Structure of Na-doped ZnO Films. Journal of Applied Physics,2011,110 (1):013704-1-4.
[34]Y. J. Zeng, Z. Jian, Z. Z. Ye, G. H. Gao, Y. Lu, B. H. Zhao, L. P. Zhu, and S. H. Hu. Growth of Al-N Codoped P-type ZnMgO Thin Films on Different Substrates. Superlattice and Microstructures,2008,43 (4): 278-284.
[35]Y. M. Ye, Z. Z. Ye, L. L. Chen, B. H. Zhao, and L. P. Zhu. Fabrication of P-type ZnMgO Codoped with Al and N Using DC Reactive Magnetron Sputtering. Applied Surface Science,2006,253 (4):2345-2347.
[36]M. Kumar, T. H. Kim, S. S. Kim, B. T. Lee. Growth of Epitaxial P-type ZnO Thin Films by Codoping of Ga and N. Applied Physics Letters,2006,89 (11):112103-1-3.
[37]T. Minami, H. Nanto, and S. Takata. Highly Conductive and Transparent Aluminum Doped Zinc-Oxide Thin-Films Prepared by RF Magnetron Sputtering. Jaurnal of Applied Physics,1984,23 (5):L280-282.
[38]T. Minami, H. Nanto, and S. Takata. Highly Conductive and Transparent ZnO Thin-Films Prepared by RF Magnetron Sputtering in an Applied Extenal DC Magnetic-Field. Thin Solid Films,1985,124 (1): 43-47.
[39]X. T. Hao, L. W. Tan, K. S. Ong and F. R. Zhu. High-performance Low-temperature Transparent Conducting Aluminum-doped ZnO Thin Films and Applications. Journal of Crystal Growth,2006,287 (1): 44-47.
[40]Z. A. Wang, J. B. Chu, H. B. Zhu, Z. Sun, Y. W. Chen, and S. M. Huang. Growth of ZnO:Al Films by RF Sputtering at Room Temperature for Solar Cell Applications. Solid State Electron,2009,53 (11): 1149-1153.
[41]H. Zhu, E. Bunte, J. Hupkes, H. Siekmann, and S. M. Huang. Aluminium Doped Zinc Oxide Sputtered From Rotatable Dual Magnetrons for Thin Film Silicon Solar Cells. Thin Solid Films,2009,517 (10): 3161-3166.
[42]R. L. Hoffman. ZnO-channel Thin-Film Transistors:Channel Mobility. Journal of Applied Physics,2004, 95 (10):5813-5819.
[43]A. Tibucio-Silver, A. Sanchez-Juarez, and A. Avila-Garcia. Properties of Gallium-doped ZnO Deposited onto Glass by Spray Pyrolysis. Solar Energy Materials and Solar Cells,1998,55 (1-2):3-10.
[44]M. Hiramatsu, K. Imaeda, N. Horio, and M. Nawata. Transparent Conducting ZnO Thin Films Prepared by XeCl Excimer Laser Ablation. Journal of Vacuum Science and Technology A,1998,16 (2):669-673.
[45]V. Khranovskyy, U. Grossner, O. Nilsen, V. Lazorenko, G. V. Lashkarev, B. G. Svensson, and R. Yakmova. Structural and Morphological Properties of ZnO:Ga Thin Films. Thin Solid Films,2006.515(2): 472-476.
[46]H. Hirasawa, M. Yoshida, S. Nakamura, Y. Suzuki, S. Okada, and K. Kondo. ZnO:Ga Conducting-Films Grown by DC Arc-discharge lonplating. Solar Energy Materials and Solar Cells,2001,67 (1-4):231-236.
[47]V. Assuncao, E. Fortunato, A. Marques, A. Goncalves, I. Ferreira, H. Aguas, and R. Martins. New Challenges on Gallium-doped Zinc Oxide Films Prepared by RF Magneton Sputtering. Thin Solid Films, 2003,442(1-2):102-106.
[48]V. Assuncao, E. Fortunate, A. Marques, A. Goncalves, H. Aguas, I. Ferreira, M.E.V. Costa, and R. Martins. Influence of the Deposition Pressure on the Properties of Transparent and Conductive ZnO:Ga Thin-Film Produced by RF Sputtering at Room Temperature. Thin Solid Films,2003,427 (1-2):401-405.
[49]K. Iwata, T. Sakemi, A. Yamada, P. Fons, K. Awai, T. Yamamoto, M. Matsubara, H. Tampo, and S. Niki. Growth and Electrical Properties of ZnO Thin Films Deposited by Novel Ion Plating Method. Thin Solid Films,2003,445 (2):274-277.
[50]X. H. Yu, J. Ma, F. H. Wang, C. F. Cheng, and H. L. Ma. Thickness Dependence of Properties of ZnO:Ga Films Deposited by RF Magnetron Sputtering. Applied Surface Science,2005,245 (1-4):310-315.
[51]S. M. Park, T. Ikegami, K. Ebihara, and P. K. Shin. Structure and Properties of Transparent Conductive Doped ZnO Films by Pulsed Laser Deposition. Applied Surface Science,2006,253 (3):1522-1527.
[52]M. Bender, J. H. Lee, S. H. Lee, K. L. Yoo. Deposition of a Conductive Nnear-infrared Cutoff Filter by Radio-Frequency Magnetron Sputtering. Appllied Optics,2002,41 (16):3061-3164.
[53]H. C. Chae, C. H. Baeg, J. W. Hong. Electrical Properties of ITO/Ag/ITO Conducting Transparent Thin Films. Korean Journal of Metals and Matrrials,2011,49 (2):192-196.
[54]T. H. Kim, B. H. Choi, J. S. Park, S. M. Lee, Y. S. Lee, L. S. Park. Transparent Conductive ITO/Ag/ITO Multiayer Films Prepared by Low Temperature Process and Physical Properties. Molecular Crystals and Liquid Crystals,2010,520 (1):209-214.
[55]N. Neghabi, A. Behjat, S. M. B. Ghorashi, S. M. A. Salehi. The Effect of Annealing on Structural, Electrical and Optical Properties of Nanostructured ZnS/Ag/ZnS Films. Thin Solid Films,2011,519 (16): 562-5666.
[56]Y. H. Kim, D. W. Kim, R. I. Murakami, D. Y. Zhang, S. W. Yoon, S. H. Park, and K. M. Moon. The Study of Transmittance and Conductivity by Top ZnO Thickness in ZnO/Ag/ZnO Transparent Conducting Oxide Films. Advanced Science Letters,2011,4 (4):1570-1573
[57]D. Y. Zhang, P. P. Wang, R.1. Murakami, and X. P. Song. Effect of an Interface Charge Density Wave on Surface Plasmon Resonance in ZnO/Ag/ZnO Thin Films. Applied Physics Letters,2010,96 (23): 233114-233117.
[58]D. R. Sahu, S. Y. Lin, J. L. Huang. Investigation of Conductive and Transparent Al-doped ZnO/Ag/Al-doped ZnO Multilayer Coatings by Electron Beam Evaporation. Thin Solid Films.2008.516 (15):4728-4732.
[59]S. Sutthana, N. Hongsith, S. Choopun. AZO/Ag/AZO Multilayer Films Prepared by DC Magnetron Sputtering for Dye-sensitized Solar Cell Application. Current Applied Physics,2010,10 (3):813-816.
[60]M. S. Tong, G. R. Dai, Y. D. Wu, D. S. Gao. High Sensitivity and Switching-like Response Bebavior of SnO2-Ag-SnO2 Element to H2S at Room Temperature. Journal of Materials Science-Materials in Electronics,2000,11 (9):661-665.
[61]E. Kusano, J. Kawaguchi, K. Enjouji. Thermal Stability of Heat-reflective Films Consisting of Oxide-Ag-Oxide Deposited by DC Magnetron Sputtering. Journal Vacuum Science and Technology.1986, 44 (6):2907-2911.
[62]S. M. A. Durrani, E. E. Khawaja, A. M. Al-Shukxi. Dielectric/Ag/Dielectric Coated Energy-efficient Glass Windows for Warn Climates. Energy and Buildings,2004,36:891-894.
[63]T. L. Yang, D. H. Zhang, J. Ma, H. L. Ma, and Y. Chen. Transparent Conducting ZnO:Al Films Deposited on Organic Substrates Depostied by RF Magnetron Sputtering. Thin Solid Films,1998,326 (1-2):60-62.
[64]M. Chen, Z. L. Pei, X. Wang, C. Sun, L. S. Wen. Properties of ZnO:Al Films on Polyester Produced by DC Magnetron Reactive Sputtering. Materials Letters,2001,48 (3-4):137-143.
[65]J. H. Hu, R. G. Gordon. Textured Fluorine-doped ZnO Films by Atmospheric Pressure Chemical Vapor Deposition and Their Use in Amorphous Silicon Solar Cells. Solar Cells,1991,30:437-450.
[66]A. Maldonadoa, S. Tirado-Guerrab, M. Melendez-Lirac, M. de la L. Olvera. Physical Properties of ZnO:F Obtained From a Fresh and Aged Solution of Zinc Acetate and Zinc Acetylacetonate. Solar Energy Materials and Solar. Cells.2006,90:742-752.
[67]H. Kim, C. M. Gilmore, A. Pique, J. S. Horwitz, H. Mattoussi, Z. H. Kafafi, and D. B. Chrisey. Electrical, Optical, and Structural Properties of Indium-tin-oxide Thin Films for Organic Light-emitting Devices. Journal of Applied Physics,1999,86 (11):6451-6461.
[68]C. G. Van de Walle. Hydrogen as a Cause of Doping in Zinc Oxide. Physical Review Letters,2000,85 (5):1012-1015.
[69]E. V. Lavrov, F. Borrnet, J. Weber. Photocoductivity and Infrared Absorption Study of Hydrogen-related Shallow Donors in ZnO. Physical Review B,2005,72 (8):085212-1-8.
[70]E. V. Lavrov, J. Weber, F. Borrnert, C. G. Van de Walle, R. Helbig. Hydrogen-related Defects in ZnO Studied by Infrared Absorption Spectroscopy. Physical Review B,2002,66 (16):165205-1-5.
[71]A. Janotti, C. G. Van de Walle. Native Point Defects in ZnO. Physical Review B,2007,76 (16): 165202-1-4.
[72]J. Bang, K. J. Chang. Diffusion and Thermal Stability of Hydrogen in ZnO. Applied Physics Letters, 2008,92(13):132109-1-6.
[73]H. K. Park, J. W. Kang, S.1. Na, D. Y. Kim, and H. K. Kim. Characteristics of Indium-free GZO/Ag/GZO and AZO/Ag/AZO Multilayer Electrode Grown by Dual Target DC Sputtering at Room Temperature for Low-cost Organic Photovoltaics. Solar Energy Materials and Solar Cells,2009,93 (11): 1994-2002.
[74]A. Klopple, B. Meyer, and J. Trube. Influence of Substrate Temperature and Sputtering Atmosphere on Electrical and Optical Properties of Double Silver Layer System. Thin Solid Films,2001,392 (2): 311-314.
[75]A. Kloppel, W. Kriegseis, B. K. Meyer, A. Scharmann, C. Daube, J. Stollenwerk, and J. Turbe. Dependence of the Electrical and Optical of ITO-silver-ITO Multilayers on the Silver Properties. Thin Solid Films,2000,365 (1):139-146.
[2]D. S. Ghosh, T. L. Chen, and V Pruned. Ultrathin Cu-Ti Bilayer Transparent Conductors with Enhanced Figure-of-merit and Stability. Applied physics Letters,2010,96 (9):091106.
[3]H. Klauk, J. R.. Huang, J. A. Nichols, T. N. Jackson. Ion-beam-deposited Ultrathin Transparent Metal Contacts. Thin Solid Films,2000,366 (1-2):3108-3117.
[4]Ando E, Miyazaki M, Moisture Resistance of The Low-emissivity Coatings with A Layer Structure of Al-doped ZnO/Ag/Al-doped ZnO. Thin Solid Films,2001,392(1-2):289-293
[5]李镇涛,王振加,赵大庆,ZAO/metal/ZAO多层膜光学性能优化设计,材料科学与工程学报,2004,22(4)：495-499.
[6]Yang J S, Seong H Y, Keum M J. Preparation of Transparent Conductive Films by Facing Targets Sputtering System. Surface and Coating Technology,2003,169-170:57.
[7]X. J. Liu, X. Cai, J. S. Qiao, J. F. Mao, and N. Jiang. The Design of ZnS/Au/ZnS Transparent Conductive Multilayer Films. Thin Solid Films,2003,441(1-2):200-206.
[8]H. N. Cui, V. Teixeira, L. J. Meng, R. Martins, and E. Fortunate Influence of Oxygen-Argon Pressure Ratio on the Morphology, Optical and Electrical Properties of ITO Films Deposited by RF at Room Temperature. Vacuum,2008,82(12):1507-1511.
[9]A de Graaf, J. van. Deelen, P. Poodt, Ton van Mol, K. Spee, F. Grob, and A. Kuypers. Development of Atmosphere Pressure CVD Processes for High Quality Transparent Conductive Oxides. Energy Procedia, 2000,2(1):41-48.
[10]J. Yoo, J. Lee, S. Kim, K. Yoon, I. J. Park, S. K. Dhungel, B. Karunagaran, D Mangalaraj, and J. Yi. High Transmittance and Low Resistive ZnO:Al Films for Thin Films for Thin Film Solar Cells. Thin Solid Films,2005,480(Sp. Iss. SI):213-217.
[11]P. Prete, R. Clingolani, D. Greco, et al. Exciton spectroscopy in Znl-xCdxSe/ZnSe quantum wells. Phys. Rev. B,1995,51,5176-518
[12]N. Pelekanos, J. Ding, M. Hagerott, et al. Quasi-two-dimensional excitons in (Zn,Cd)Se/ZnSe quantum wells:Reduced exciton-LO-phonon coupling due to confinement effects. Phys. Rev. B (1992) 45, 6037-6042.
[13]U. Ozgur, Y.I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc. A Comprehensive Review of ZnO Materials and Devices. Journal of Applied Physics,2005,98 (4):041301-1-103.
[14]S. B. Zhang, S. H. Wei, and A. Zunger. Intrinsic n-type Doping Asymmetry and the Defact Physics of ZnO. Physical Review B,2001,63 (7):075205-1-7.
[15]M. D. McCluskey and S. J. Jokela. Dedects in ZnO. Journal of Applied Physics,2009,106 (7): 071101-1-13.
[16]A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle. First-principles Study of Native Point Defects in ZnO. Physical Review B.2000.61 (22):15019-15027.
[17]A. Janotti and C. G. Van de Walle. Absolute Deformation Potentials and Band Alignment of WurtziteZnO. MgO, and CdO. Physical Review B,2007,75 (12):121201-1-4.
[18]L. S. Vlasenko and G. D. Watkins. Optical Detection of Electron Paramagnetic Resonance for Intrinsic Defects Produced in ZnO by 2.5-MeV Electron Irradiation in Situ at 4.2 K. Physical Review B,2005,72 (3):035203-1-12.
[19]P. Banerjee, W. J. Lee, K. R. Bae, S. B. Lee and G. W. Rubloff. Structural, Electrical, and Optical Properties of Atomic Layer Deposition Al-doped ZnO Flims. Journal of Applied Physics,2010,108 (4): 043504-1-7.
[20]B. Nasr, S. Dasgupta, D. Wang, N. Mechau, R. Kruk and H. Hahn. Electrical Resistivity of Nanocrystalline Al-doped Zink Oxide Films as a Function of Al Content and the Degree of Its Segregation at the Grain Boundaries. Journal of Applied Physics,2010,108 (10):103721-6.
[21]M. Hisao, S. Yasushi, Y. Naoki and Y. Tetsuya. Changes in Electrical and Optical Properties of Polycrystalline Ga-doped ZnO Thin Films Due to Thermal Desorption of Zink. Thin Solid Films,2011, 520(5):1407-1410
[22]C. Y. Tsay, K. S. Fan, C. M. Lei. Synthesis and Characterization of Sol-gel Derived Gallium-doped Zinc Oxide Thin Flims. Journal of Alloys and Compounds,2012,512 (1):216-222.
[23]S. Chirakkara, K. K. Nanda, S. B. Krupanidhi. Plused Laser Peposited ZnO:In as Transparent Conducting Oxide. Thin Solid Films,2011,519 (11):3627-3652.
[24]T. Serin, A. Yildiz, S. Uzun, E. Cam and N. Serin. Electrical Conduction Proerties do In-doped ZnO Thin Films. Physics Scripta,2011,84 (6):065703-1-6.
[25]J. T. Luo, X. Y. Zhu, G. Chen, F. Zeng and H. Pan. The Electrical, Optical and Magnetic Properties of Si-doped ZnO Films. Applied Surface Science,2012,258 (6):2177-2181.
[26]S. Llican, M. Caglar, Y. Caglar. Sn Doping Effects on the Electro-optical Properties of Sol-gel Derived Transparent ZnO Films. Applied Surface Science,2010,195 (17):7204-7210.
[27]L. Cao, L. P. Zhu, R. Zhao, Z. Z. Ye, B. H. Zhao. Highly Transparent and Conducting Fluorine-doped ZnO Thin. Films Prepared by Pulsed Laser Deposition. Solar Energy Materials and Solar Cells.2011,95 (3):894-898
[28]G. M. Nam, M. S. Kwon. F-doped ZnO by Sol-gel Spin-coating As a Transparent Conducting Thin Film. Electronic Materials,2011,7 (2):127-131.
[29]X. H. Pan, Z. Z. Ye, H. S. Li, Y. J. Zeng, X. Q Gu, L. P. Zhu, B. H. Zhao and Y. Che. Fabrication of P-type ZnMgO Films via Pulsed Laser Deposition Method by Using Li As Dopant Source. Applied Surface Science,2007,253 (14):6060-6062.
[30]X. H. Pan, Z. Z. Ye, J. Y. Huang, Y. J. Zeng, H. P. He, X. Q. Gu, L. P. Zhu and B. H. Zhao. P-type Behavior in Li-doped Zno.9Mgo.1O Thin Films. Journal of Crystal Growth,2008,310 (6):1029-1033.
[31]M. X. Qiu, X. Q. Gu, Z. Z. Ye, J. G. Lu, H. P. He, Y. Z. Zhang and B. H. Zhao. P-type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-lithium Codopd Zn0.11Mg0.89O Thin Films. Journal of Vacuum Science and Technology B,2009,27 (4):1897-1900.
[32]X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che and X. Q. Pan. Preparation of P-type ZnMgO Thin Films by Sb Doping Method. Journal of Physics D-Applied Physics, 2009,40 (14):4241-4244.
[33]J. J. Lai, Y. J. Lin, Y. H. Chen, H. C. Chang, C. J. Liu, Y. Y. Zou, Y. T. Shih and M. C. Wang. Effects of Na Contact on the Luminescence Behavior, Conduction Type, and Crystal Structure of Na-doped ZnO Films. Journal of Applied Physics,2011,110 (1):013704-1-4.
[34]Y. J. Zeng, Z. Jian, Z. Z. Ye, G. H. Gao, Y. Lu, B. H. Zhao, L. P. Zhu, and S. H. Hu. Growth of Al-N Codoped P-type ZnMgO Thin Films on Different Substrates. Superlattice and Microstructures,2008,43 (4): 278-284.
[35]Y. M. Ye, Z. Z. Ye, L. L. Chen, B. H. Zhao, and L. P. Zhu. Fabrication of P-type ZnMgO Codoped with Al and N Using DC Reactive Magnetron Sputtering. Applied Surface Science,2006,253 (4):2345-2347.
[36]M. Kumar, T. H. Kim, S. S. Kim, B. T. Lee. Growth of Epitaxial P-type ZnO Thin Films by Codoping of Ga and N. Applied Physics Letters,2006,89 (11):112103-1-3.
[37]T. Minami, H. Nanto, and S. Takata. Highly Conductive and Transparent Aluminum Doped Zinc-Oxide Thin-Films Prepared by RF Magnetron Sputtering. Jaurnal of Applied Physics,1984,23 (5):L280-282.
[38]T. Minami, H. Nanto, and S. Takata. Highly Conductive and Transparent ZnO Thin-Films Prepared by RF Magnetron Sputtering in an Applied Extenal DC Magnetic-Field. Thin Solid Films,1985,124 (1): 43-47.
[39]X. T. Hao, L. W. Tan, K. S. Ong and F. R. Zhu. High-performance Low-temperature Transparent Conducting Aluminum-doped ZnO Thin Films and Applications. Journal of Crystal Growth,2006,287 (1): 44-47.
[40]Z. A. Wang, J. B. Chu, H. B. Zhu, Z. Sun, Y. W. Chen, and S. M. Huang. Growth of ZnO:Al Films by RF Sputtering at Room Temperature for Solar Cell Applications. Solid State Electron,2009,53 (11): 1149-1153.
[41]H. Zhu, E. Bunte, J. Hupkes, H. Siekmann, and S. M. Huang. Aluminium Doped Zinc Oxide Sputtered From Rotatable Dual Magnetrons for Thin Film Silicon Solar Cells. Thin Solid Films,2009,517 (10): 3161-3166.
[42]R. L. Hoffman. ZnO-channel Thin-Film Transistors:Channel Mobility. Journal of Applied Physics,2004, 95 (10):5813-5819.
[43]A. Tibucio-Silver, A. Sanchez-Juarez, and A. Avila-Garcia. Properties of Gallium-doped ZnO Deposited onto Glass by Spray Pyrolysis. Solar Energy Materials and Solar Cells,1998,55 (1-2):3-10.
[44]M. Hiramatsu, K. Imaeda, N. Horio, and M. Nawata. Transparent Conducting ZnO Thin Films Prepared by XeCl Excimer Laser Ablation. Journal of Vacuum Science and Technology A,1998,16 (2):669-673.
[45]V. Khranovskyy, U. Grossner, O. Nilsen, V. Lazorenko, G. V. Lashkarev, B. G. Svensson, and R. Yakmova. Structural and Morphological Properties of ZnO:Ga Thin Films. Thin Solid Films,2006.515(2): 472-476.
[46]H. Hirasawa, M. Yoshida, S. Nakamura, Y. Suzuki, S. Okada, and K. Kondo. ZnO:Ga Conducting-Films Grown by DC Arc-discharge lonplating. Solar Energy Materials and Solar Cells,2001,67 (1-4):231-236.
[47]V. Assuncao, E. Fortunato, A. Marques, A. Goncalves, I. Ferreira, H. Aguas, and R. Martins. New Challenges on Gallium-doped Zinc Oxide Films Prepared by RF Magneton Sputtering. Thin Solid Films, 2003,442(1-2):102-106.
[48]V. Assuncao, E. Fortunate, A. Marques, A. Goncalves, H. Aguas, I. Ferreira, M.E.V. Costa, and R. Martins. Influence of the Deposition Pressure on the Properties of Transparent and Conductive ZnO:Ga Thin-Film Produced by RF Sputtering at Room Temperature. Thin Solid Films,2003,427 (1-2):401-405.
[49]K. Iwata, T. Sakemi, A. Yamada, P. Fons, K. Awai, T. Yamamoto, M. Matsubara, H. Tampo, and S. Niki. Growth and Electrical Properties of ZnO Thin Films Deposited by Novel Ion Plating Method. Thin Solid Films,2003,445 (2):274-277.
[50]X. H. Yu, J. Ma, F. H. Wang, C. F. Cheng, and H. L. Ma. Thickness Dependence of Properties of ZnO:Ga Films Deposited by RF Magnetron Sputtering. Applied Surface Science,2005,245 (1-4):310-315.
[51]S. M. Park, T. Ikegami, K. Ebihara, and P. K. Shin. Structure and Properties of Transparent Conductive Doped ZnO Films by Pulsed Laser Deposition. Applied Surface Science,2006,253 (3):1522-1527.
[52]M. Bender, J. H. Lee, S. H. Lee, K. L. Yoo. Deposition of a Conductive Nnear-infrared Cutoff Filter by Radio-Frequency Magnetron Sputtering. Appllied Optics,2002,41 (16):3061-3164.
[53]H. C. Chae, C. H. Baeg, J. W. Hong. Electrical Properties of ITO/Ag/ITO Conducting Transparent Thin Films. Korean Journal of Metals and Matrrials,2011,49 (2):192-196.
[54]T. H. Kim, B. H. Choi, J. S. Park, S. M. Lee, Y. S. Lee, L. S. Park. Transparent Conductive ITO/Ag/ITO Multiayer Films Prepared by Low Temperature Process and Physical Properties. Molecular Crystals and Liquid Crystals,2010,520 (1):209-214.
[55]N. Neghabi, A. Behjat, S. M. B. Ghorashi, S. M. A. Salehi. The Effect of Annealing on Structural, Electrical and Optical Properties of Nanostructured ZnS/Ag/ZnS Films. Thin Solid Films,2011,519 (16): 562-5666.
[56]Y. H. Kim, D. W. Kim, R. I. Murakami, D. Y. Zhang, S. W. Yoon, S. H. Park, and K. M. Moon. The Study of Transmittance and Conductivity by Top ZnO Thickness in ZnO/Ag/ZnO Transparent Conducting Oxide Films. Advanced Science Letters,2011,4 (4):1570-1573
[57]D. Y. Zhang, P. P. Wang, R.1. Murakami, and X. P. Song. Effect of an Interface Charge Density Wave on Surface Plasmon Resonance in ZnO/Ag/ZnO Thin Films. Applied Physics Letters,2010,96 (23): 233114-233117.
[58]D. R. Sahu, S. Y. Lin, J. L. Huang. Investigation of Conductive and Transparent Al-doped ZnO/Ag/Al-doped ZnO Multilayer Coatings by Electron Beam Evaporation. Thin Solid Films.2008.516 (15):4728-4732.
[59]S. Sutthana, N. Hongsith, S. Choopun. AZO/Ag/AZO Multilayer Films Prepared by DC Magnetron Sputtering for Dye-sensitized Solar Cell Application. Current Applied Physics,2010,10 (3):813-816.
[60]M. S. Tong, G. R. Dai, Y. D. Wu, D. S. Gao. High Sensitivity and Switching-like Response Bebavior of SnO2-Ag-SnO2 Element to H2S at Room Temperature. Journal of Materials Science-Materials in Electronics,2000,11 (9):661-665.
[61]E. Kusano, J. Kawaguchi, K. Enjouji. Thermal Stability of Heat-reflective Films Consisting of Oxide-Ag-Oxide Deposited by DC Magnetron Sputtering. Journal Vacuum Science and Technology.1986, 44 (6):2907-2911.
[62]S. M. A. Durrani, E. E. Khawaja, A. M. Al-Shukxi. Dielectric/Ag/Dielectric Coated Energy-efficient Glass Windows for Warn Climates. Energy and Buildings,2004,36:891-894.
[63]T. L. Yang, D. H. Zhang, J. Ma, H. L. Ma, and Y. Chen. Transparent Conducting ZnO:Al Films Deposited on Organic Substrates Depostied by RF Magnetron Sputtering. Thin Solid Films,1998,326 (1-2):60-62.
[64]M. Chen, Z. L. Pei, X. Wang, C. Sun, L. S. Wen. Properties of ZnO:Al Films on Polyester Produced by DC Magnetron Reactive Sputtering. Materials Letters,2001,48 (3-4):137-143.
[65]J. H. Hu, R. G. Gordon. Textured Fluorine-doped ZnO Films by Atmospheric Pressure Chemical Vapor Deposition and Their Use in Amorphous Silicon Solar Cells. Solar Cells,1991,30:437-450.
[66]A. Maldonadoa, S. Tirado-Guerrab, M. Melendez-Lirac, M. de la L. Olvera. Physical Properties of ZnO:F Obtained From a Fresh and Aged Solution of Zinc Acetate and Zinc Acetylacetonate. Solar Energy Materials and Solar. Cells.2006,90:742-752.
[67]H. Kim, C. M. Gilmore, A. Pique, J. S. Horwitz, H. Mattoussi, Z. H. Kafafi, and D. B. Chrisey. Electrical, Optical, and Structural Properties of Indium-tin-oxide Thin Films for Organic Light-emitting Devices. Journal of Applied Physics,1999,86 (11):6451-6461.
[68]C. G. Van de Walle. Hydrogen as a Cause of Doping in Zinc Oxide. Physical Review Letters,2000,85 (5):1012-1015.
[69]E. V. Lavrov, F. Borrnet, J. Weber. Photocoductivity and Infrared Absorption Study of Hydrogen-related Shallow Donors in ZnO. Physical Review B,2005,72 (8):085212-1-8.
[70]E. V. Lavrov, J. Weber, F. Borrnert, C. G. Van de Walle, R. Helbig. Hydrogen-related Defects in ZnO Studied by Infrared Absorption Spectroscopy. Physical Review B,2002,66 (16):165205-1-5.
[71]A. Janotti, C. G. Van de Walle. Native Point Defects in ZnO. Physical Review B,2007,76 (16): 165202-1-4.
[72]J. Bang, K. J. Chang. Diffusion and Thermal Stability of Hydrogen in ZnO. Applied Physics Letters, 2008,92(13):132109-1-6.
[73]H. K. Park, J. W. Kang, S.1. Na, D. Y. Kim, and H. K. Kim. Characteristics of Indium-free GZO/Ag/GZO and AZO/Ag/AZO Multilayer Electrode Grown by Dual Target DC Sputtering at Room Temperature for Low-cost Organic Photovoltaics. Solar Energy Materials and Solar Cells,2009,93 (11): 1994-2002.
[74]A. Klopple, B. Meyer, and J. Trube. Influence of Substrate Temperature and Sputtering Atmosphere on Electrical and Optical Properties of Double Silver Layer System. Thin Solid Films,2001,392 (2): 311-314.
[75]A. Kloppel, W. Kriegseis, B. K. Meyer, A. Scharmann, C. Daube, J. Stollenwerk, and J. Turbe. Dependence of the Electrical and Optical of ITO-silver-ITO Multilayers on the Silver Properties. Thin Solid Films,2000,365 (1):139-146.