基于混合域累加的TDI型CMOS图像传感器关键技术研究
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摘要
时间延迟积分(Time-Delay-Integration, TDI)型图像传感器是一种特殊的传感器,它以面阵图像传感器的形式完成线阵扫描成像的功能,能够实现高速扫描和高分辨率影像,可获得比传统面阵图像传感器更高的分辨率和精度,在空间遥感、航空成像、工业监测控制和安全监控等领域具有极其重要的应用价值。随着CMOS工艺特征尺寸的缩小和CMOS处理电路可集成性的提高,基于标准CMOS工艺的TDI型图像传感器已经成为该领域的研究热点。因此,本文立足于混合域累加的系统架构和读出处理电路设计,开展TDI型CMOS图像传感器设计的关键技术研究。
     本文深入分析现有TDI型图像传感器的研究现状,提出一种可节省芯片面积并同时实现高速行频的基于混合域累加的系统研究方案;立足于CMOS工艺特点和发展趋势,设计了一种输出电流信号的有源像素结构;研究可用于实现32级混合域累加的电流型模拟累加器和数字累加器,并对其噪声特性进行分析;针对本文研究方案的列级读出架构,提出了两种模数转换器结构。一种为带有误差校准的单斜ADC,另一种为可直接量化电流信号的Cyclic ADC。本文通过理论分析、系统建模、电路设计仿真以及测试,完成TDI型CMOS图像传感器整体系统,包括像素与读出电路的设计,并采用GSMC混合信号工艺对系统中的关键模块进行投片验证。仿真与测试结果表明,所设计的电路能够满足系统要求。
     本文的创新性工作包括:
     1、基于32级TDI型CMOS图像传感器,提出一种新型的混合域累加的读出电路结构。该读出结构结合模拟域累加和数字域累加各自的优势,能够大幅节省累加器占用的芯片面积,在保证高速输出行频的基础上,放宽数模转换器对转换速率的要求。仿真与验证结果表明,该混合域读电路结构能够实现与单纯模拟域累加或单纯数字域累加相同的信噪比提升性能。
     2、在研究TDI型CMOS图像传感器工作原理和时间延迟积分技术的基础上,基于混合域累加的读出结构,分析推导出电流累加器的低噪声设计方法,并设计一种低噪声的新型电流信号累加电路。
     3、提出了一种量化电流信号的模数转换器电路结构,在保证转换精度和低芯片面积的前提下,提高了ADC的功耗效率。同时设计了一种用于该模数转换器的电流采样保持电路,该电路能够消除开关电荷注入中与信号相关的噪声,并抑制与信号不相关的噪声。
Time-Delay-Integration (TDI) image sensor is a particular visual sensor, which cancapture image information in the form of two dimensions array working as thescanning mode of one line pixels. And the TDI image sensor achieves higher scanningspeed and higher resolution compared to traditional array image sensor, so it isespecially suitable for applications in space image, aerial photography, industrialdetection and security. As the scaling of CMOS standard process technology andincreasing of integration in processing circuit, the TDI image sensor based on CMOSprocess technology becomes the most popular issue in the field of imaging system.Therefore, this paper will focus on the mixed-domain-accumulation mode andprocessing circuit design, and research the key technology in the TDI CMOS imagesensor.
     Supporting by in-depth analysis of current research scheme in TDI image sensor, asystematic based on the mixed-domain-accumulation mode which can save the siliconarea and realize high speed readout is firstly proposed. Considering the feature and thedevelopment tendency, a linear current-mode pixel is designed. And a32stagesmixed-domain accumulator is designed based on the research of the readout circuit inTDI CMOS image sensor, and the noise characteristic is also analyzed. Finally, twotypes of column level analog-to-digital converters (ADCs) are proposed for the TDIreadout system. One is a single-slope ADC with error calibration, the other one is aCyclic ADC which can be used to digitalized current signal directly. In this paper, thecorresponding current-mode pixel and the readout circuit are discussed in detailthrough theoretical analysis, system modeling, circuit simulation and testing. Themain blocks have been fabricated and verified. The result of simulation and testingindicates that the proposed TDI CMOS image sensor works effectively.
     The creative work of the paper include:
     1. A structure of mixed-domain-accumulation is proposed based on the32stagesTDI CMOS image sensor. The new structure combines the advantages ofanalog-domain and digital domain, which can save the silicon area and relax therestrictions of the converting speed of ADC. The result of simulation indicates that thesignal-to-noise ratio can be improved as well as analog-domain or digital-domain.
     2. A low noise current accumulator is proposed based on the principle of TDI imagesensor and mixed-domain-accumulation mode structure. And the optimization designmethods of low noise current accumulator are derived.
     3. A current mode ADC which can be used to digitalized current signal is proposed.The power efficiency can be guaranteed without adding the silicon area or decreasing the precision. Meanwhile, a current-mode sample-and-hold circuit, which can be usedto remove the signal-dependent charge injection and suppress the signal-independentcharge injection, is adopted to improve the precision of the ADC.
引文
[1] A. J. P. Theuwissen, CMOS image sensors: State-of-the-art, Solid-StateElectronics,2008,52:1401-1406
    [2] A. E. Gamal, H. Eltoukhy, CMOS image sensors, IEEE Circuits and DevicesMagazine,2005,21(3):6-20
    [3] M. Bigas, E. Cabruja, J. Forest, et al, Review of CMOS image sensors,Microelectronics Journal,2006,37:433-451
    [4] M. El-Desouki, M. J. Deen, Q. Fang, et al, CMOS image sensors for high speedapplications, Sensors,2009,9(1):430-444
    [5] A. Theuwissen, CMOS image sensors: state-of-the-art and future perspectives,Measurement Science and Technology,2009,20(9):21-27
    [6] M. J. Deen, M. M. El-Desouki, N. Faramarzpour, CMOS image sensors andcamera-on-a-chip for low-light level biomedical applications, IEEE InternationalConference on Electron Devices and Solid-State Circuits,2008:1-6
    [7] E. Culurclello, A. G. Andreou, CMOS image sensors for sensor networks, AnalogIntegrated Circuits and Signal Processing,2006,49(1):39-51
    [8] S. Lee, K. Lee, J. Park, et al, A1/2.33-inch14.6M1.4μm-pixelbackside-illuminated CMOS image sensor with floating diffusion boosting, IEEEInternational Solid-State Circuits Conference Digest of Technical Papers,2011:20-24
    [9] H. Wakabayashi, K. Yamaguchi, M. Okano, et al, A1/2.3-inch10.3Mpixel50frames/s bask-illuminated CMOS image sensor, IEEE International Solid-StateCircuits Conference Digest of Technical Papers,2010:410-412
    [10] C. Esquenet, J. Compiet, T. Blanchaert, et al, A26.2Mpixel,74fps, global shutterCMOS imager with20Gb/s interface for multi object monitoring, in Proc.International Image Sensor Workshop,2011:332-334
    [11] M. G. Farrier, R. H. Dyck, A large area TDI image sensor for low light levelimaging, IEEE Journal of Solid-State Circuits,1980,15(4):753-758
    [12] E. Bodenstorfer, J. Furtler, J. Brodersen, et al, High-speed line-scan camera withdigital time delay integration, in Proc. Electronic Imaging Conference on Real TimeImaging,2007:649601-1-649601-10
    [13] E. Fox, CMOS TDI image sensor, US patent,6906749,2005-06-14
    [14] G. Lepage, D. Dantes, W. Diels, CMOS long linear array for space application, inProc. Electronic Imaging Conference,2006:61-68
    [15] D. C. Reuter, S. A. Stern, J. Scherrer, et al, Ralph: a visible/ingrared imager forthe new horizons pluto/kuiper belt mission, Space Science Reviews,2008,140(1-4):129-154
    [16] B. Pain, T. J. Cunningham, G. Yang, et al, Time-delay-integration imaging withactive pixel sensors, US patent,7268814,2007-09-11
    [17] H. Michaelis, R. Jaumann, S. Mottola, et al, CMOS-APS sensor with TDI forhigh resolution planetary remote sensing, Nuclear Instruments and Methods inPhysics Research Section A,2007,582(3):866-870
    [18] G. Lepage, J. Bogaerts, G. Meynants, Time-delay-integration architectures inCMOS image sensors, IEEE Transactions on Electron Devices,2009,56(11):2524-2533
    [19] J. Bogaerts, P.D. Moor, K. D. Munck, et al, Development of CMOS active pixelsensors for earth observation, in Proc.5th EARSel Workshop on IMagingSpectroscopy,2007:23-25
    [20] C. B. Kim, B. H. Kim, Y. S. Lee, et al, Smart CMOS charge transfer readoutcircuit for time delay and integration arrays, IEEE Custom Integrrated CircuitsConference,2006:651-654
    [21] C. B. Kim, C. H. Hwang, B. H. Kim, et al, CMOS TDI readout circuit thatimproves SNR for satellite applications, Electronics Letters,2008,44(5):346-347
    [22] F. K. Tsai, H. Y. Huang, A time-delay-integration CMOS readout circuit for IRscanning, in Proc. International Conference on Electronics, Circuits and Systems,2002:247-250
    [23] L. Zhang, S. Li, G. Jin, et al, Modeling of satellite borne TDI CCD pitchingimaging image motion velocity vector, IEEE International Conference on Automationand Logistics,2009:1587-1591
    [24]曲宏松,张叶,金光,基于数字域TDI算法改进面阵CMOS图像传感器功能,光学精密工程,2010,18(8):1896-1903
    [25] X. L. Chen, Y. Feng, D. Q. Liang, Design of operation parameters of high speedTDI CCD line scan camera, Journal of Harbin Institute of Technology,2006,13(6):683-687
    [26] X. L. Chen, C. L. Yin, Y. Feng, A virtual simulation system of TDI line scancamera, IEEE International Conference on Advanced Intelligent Mechatronics,2008:138-144
    [27] X. W. Shi, X. W. Wu, X. J. Xu, Modulation transfer function model of scanningTDI sensors with oversampling-superposition, IEEE International Instrumentationand Measurement Technology Conference,2008:652-656
    [28] Z. J. Chen, W. G. Lu, J. Tang, et al, A CMOS TDI readout circuit for infraredfocal plane array, in Proc.9th International Conference Solid-State andIntegrated-circuit Technology,2008:1756-1768
    [29] Y. C. Zhang, D. Liu, W. G. Lu, et al, A TDI CMOS readout circuit for IRFPA withlinearity improvement, IEEE Conference on Electron Devices and Solid-State Circuits,2005:589-592
    [30] W. G. Lu, J. Gao, Z. J. Chen, et al, A novel low-power readout structure for TDIROIC, in Proc.5th International Conference on ASIC,2003:591-594
    [31]高静,线阵CMOS图像传感器芯片设计技术研究,博士学位论文,天津大学,2008
    [32] O. Rajaee, A. Jahanian, M. S. Bakhitar, A low voltage, high speed, highresolution class AB switched current sample and hold, IEEE International Symposiumon Circuits and Systems,2006:21-24
    [33] Y. Sugimoto, A realization of a below-1-V operational and30-MS/ssample-and-hold IC with a56-dB signal-to-noise ratio by applying the current-basedcircuit approach, IEEE Transactions on Circuits and Systems-I: Regular Papers,2004,51(1):110-117
    [34] Y. Sugimoto, Y. Gohda, S. Tanaka, A35MS/s and2V/2.5V current-modesample-and-hold circuit with an input current linearization technique, in Proc. AsiaSolid-State Circuits Conference,2005:445-448
    [35]张朋,刘团结,王宏琦,线阵CCD相机MTF的系统模型估算法与图像复原,光学技术,2009,35(3):394-398
    [36] B. Kim, H. C. Lee, Smart TDI readout circuit for long-wavelength IR detector,Electronics Letters,2002,38(16):854-855
    [37] M. Furuta, Y. Nishikawa, T. Inoue, et al, A high-speed, high-sensitivity figitalCMOS image sensor with a global shutter and12-bit column-parallel cyclic A/Dconverters, IEEE Journal of Solid-State Circuits,2007,42(4):766-774
    [38] M. Meingast, C. Geyer, S. Sastry, Geometric models of rolling-shutter cameras,in Proc. Omnidirectional Vision, Camera Networks and Non-classical Cameras,2005:12-19
    [39] G. Lepage, Time delayed integration CMOS image sensor with zerodesynchronization, US patent,7675561,2010-03-09
    [40] V. Gruev, Z. Yang, J. V. Spiegel, Low power linear current model image with1.5transistors per pixel, IEEE International Symposium on Circuits and Systems,2008:2142-2145
    [41] V. Gruev, Z. Yang, J. V. Spiegel, et al, Two transistor current mode active pixelsensor, IEEE International Symposium on Circuits and Systems,2007:2846-2849
    [42] F. Tang, A. Bermak, Low-power and high-speed current-mode CMOS imagewith1T biasing scheme, IEEE Sensors,2010:1653-1656
    [43] K. S. Karim, F. Taghibalhsh, M. H. Izadi, et al, Current mode active pixel sensorarchitectures for large area digital imaging, IEEE International Conference onMicroelectronics,2008:1-4
    [44] S. W. Han, S. J. Kim, J. H. Choi, et al, A high dynamic range CMOS imagesensor with in-pixel floating-node analog memory for pixel level integration timecontrol, in Proc. Symposium on VLSI Circuits, Diggest of Technical Papers,2006:25-26
    [45] S. U. Ay, E. R. Fossum, A76×77mm2,16.85million pixel CMOS APS imagesensor, in Proc. Symposium on VLSI Circuits, Diggest of Technical Papers,2006:19-20
    [46] J. T. Yu, B. Q. Li, P. P. Yu, et al, Two-dimensional pixel image lag simulation andoptimization in a4-T CMOS image sensor, Journal of Semiconductors,2010,31(9):094011
    [47] S. G. Wuu, H. C. Chien, D. N. Yaung, et al, A high performance active pixlesensor with0.18μm CMOS color imager technology, in Proc. International ElectronDevices Meeting,2001:24.3.1-24.3.4
    [48] I. Inoue, H. Ihara, H. Yamashita, et al, Low dark current pinned photo-diode forCMOS image sensor, in1999Workshop on CCD and AIS,1999:25-28
    [49] A. Krymski, K. Tajima, CMOS image sensor with integrated4GB/s Camera linktransmitter, IEEE International Solid-State Circuits Conference,2006:2040-2049
    [50] R. M. Guidash, T.-H. Lee, P. P. K. Lee, et al, A0.6μm CMOS pinned photodiodecolor imager technology, in Proc. International Electron Devices Meeting,1997:927-929
    [51] M. Vatteroni, D. Covi, A. Satori, A linear-logarithmic CMOS pixel for highdynamic range behavior with fixed-pattern-noise correction and tunable responsivity,IEEE Sensors,2008:930-933
    [52] B. Pain, G. Yang, T. J. Cunnigham, et al, An enhanced-performance CMOS imagewith a flushed-reset photodiode pixel, IEEE Transactions on Electron Devices,2003,50(1):48-56
    [53] S. Park, H. Uh, The effect of size on photodiode pinch-off voltage for small pixelCMOS image sensors, Microelectronics Journal,2009,40:137-140
    [54] A. E. Gamal, Trends in CMOS image sensor technology and design, in Proc.International Electron Devices Meeting,2002:805-808
    [55] F. Boussaid, A. Bermark, A. Bouzerdoum, et al, An ultra-low power operatingtechnique for mega-pixels current-mediated CMOS imagers, IEEE Transactions onConsumer Electronics,2004,50(1):46-53
    [56] R. M. Philipp, D. Orr, V. Gruev, et al, Linear current-mode active pixel sensor,IEEE Journal of Solid-State Circuits,2007,42(11):2482-2491
    [57] C. Xu, W. Zhang, W. H. Ki, et al, A1.0VDDCMOS active-pixel sensor withcomplementary pixel architecture and pulsewidth modulation fabricated with0.25-μmCMOS process, IEEE Journal of Solid-State Circuits,2002,37(12):1853-1859
    [58] R. M. Philipp, R. E. Cummings, A1V current-mode CMOS active pixel sensor,in Proc. IEEE Interational Symposium on Circuits and Systems,2005:4771-4774
    [59] F. Tang, A. Bermark, A low power linear output current-mediated CMOS imager,in Proc. Asia Symposium on Quality Electronic Design,2009:284-287
    [60] V. Gruev, R. E. Cummings, T. Horiuchi, Linear current mode imager with low fixpattern noise, in Proc. International Symposium on Circuits and Systems,2004:IV860-IV863
    [61] Y. C. Shih, C. Y. Wu, An optimized CMOS pseudo-active-pixel-sensor structurefor low-dark-current imager applications, in Proc. International Symposium onCircuits and Systems,2003:I809-I812
    [62] J. Guo, S. Sonkusale, Current-mode readout circuit with pixel-level logarithmicADC for IR FPA applications, in Proc.51st Midwest Symposium on Circuits andSystems,2008:394-397
    [63] M. Perenzoni, D. Mosconi, D. Stoppa, A160×120-pixel uncooled IR-FPAreadout integrated circuit with on-chip non-uniformity compensation, in Proc.ESSCIRC,2010:122-125
    [64] C. Liu, W. G. Lu, Z. J. Chen, et al, A low power high speed ROIC design for1024×1024IRFPA with novel readout stage, IEEE International Conference onElectron Devices and Solid-State Circuits,2008:1-4
    [65] P. Felix, M. Moulin, B. Munier, et al, CCD readout of infrared hybrid focal-planearrays, IEEE Transactions on Electron Devices,1980,27(1):175-188
    [66] P. Torkzadeh, M. Atarodi, Channel charge injection analysis and its modeling inZ-domain for switched-capacitor integrators, IEEE International Midwest Symposiumon Circuits and Systems,2009:126-129
    [67] S. J. Daubert, D. Vallancourt, Operation and analysis of current copier circuits,IEE Circuits, Devices and Systems,1990,137(2):109-115
    [68] X. N. Qi, S. C. Lo, A. Gyure, et al, Efficient subthreshold leakage currentoptimization-Leakage current optimization and layout migration for90-and65-nmASIC libraries, IEEE Circuits and Devices Magazine,2006,22(5):39-47
    [69] R. Schreier, J. Silva, J. Steensgaard, Design-oriented estimation of thermal noisein switched-capacitor circuits, IEEE Transactions on Circuits and Systems-I:RegularPapers,2005,52(11):2358-2368
    [70] Y. Degerli, F. Lavernhe, P. Magnan, et al, Analysis and reduction of signalreadout circuitry temporal noise in CMOS image sensors for low-light levels, IEEETransactions on Electron Devices,2000,47(5):949-962
    [71] A. I. A. Cunha, M. C. Schneider, C. G. Montore, An MOS transistor model foranalog circuit design, IEEE Journal of Solid-State Circuits,1998,33(10):1510-1519
    [72] M. Manghisoni, Gate current noise in ultrathin oxide MOSFETs and its impacton the performance of analog front-end circuits, IEEE Transactions on NuclearScience,2008,55(4):2399-2407
    [73] B. Razavi, Design of analog CMOS integrated circuits, New York:McGraw-Hill,2001
    [74] W. M. Leach, Fundamentals of low-noise analog circuit design, Proc. IEEE,1994,82(10):1515-1538
    [75] H. kulah, J. Chae, N. Yazdi, et al, Noise analysis and characterization of aaigma-delta capacitive microaccelerometer, IEEE Journal of Solid-State Circuits,2006,41(2):352-361
    [76] I. Brouk, A. Nemirovsky, Y. Nemirovsky, Analysis of noise in CMOS imagesensor, IEEE International Conference on Microwaves, Communications Antennasand Electronic Systems,2008:1-8
    [77] J. Cheon, G. Han, Noise analysis and simulation method for a single-slope ADCwith CDS in a CMOS image sensor, IEEE Transactions on Circuits andSystems-I:Regular Papers,2008,55(10):2980-2987
    [78] S. Y. Yao, Z. X. Yang, S. B. Zhao, et al, High speed column-parallel CDS?ADCcircuit with nonlinearity compensation for CMOS image sensor, Transactions ofTianjin University,2011,17(2):79-84
    [79] M. F. Snoeij, P. Donegan, A. J. P. Theuwissen, et al, A CMOS image sensor witha column-level multiple-ramp single-slope ADC, IEEE International Solid-StateCircuits Conference,2007:506-618
    [80] S. Lim, J. Cheon, Y. Chae, et al, A240-frames/s2.1-Mpixel CMOS image sensorwith column-shared cyclic ADCs, IEEE Journal of Solid-State Circuits,2011,46(9):2073-2083
    [81] J. S. Wang, C. L. Wey, A12-bit100-ns/bit1.9-mW CMOS switched-currentcyclic A/D converter, IEEE Transactions on Circuits and Systems-II: Analog andDigital Processing,1999,46(5):507-516
    [82] C. Y. Wu, Y. Y. Liow, New current-mode wave-pipelined architecture forhigh-speed analog-to-digital converters, IEEE Transactions on Circuits and Systems-I:Regular Papers,2004,51(1):25-37
    [83] A. Agrwal, Y. B. Kim, S. Sonkusale, Low power current mode for CMOS sensorIC, IEEE International Symposium on Circuits and Systems,2005:584-587
    [84] S. R. Krishna, M. S. Baghini, J. Mukherjee, Current-mode CMOS pipelined ADC,IEEE EUROCON,2009:205-210
    [85] C. H. Hwang, H. C. Lee, Readout integrated circuits involving pixel-level ADCfor microbolometers, in Proc. International SoC Design Conference,2008:III70-III71
    [86] L. S. Y. Wong, S. Hossain, A. Ta, et al, A very low-power CMOS mixed-signal ICfor implantable pacemaker applications, IEEE Journal of Solid-State Circuits,2004,39(12):2446-2456
    [87] E. Rahiminejad, R. Lotfi, A low-power architecture for integratinganalog-to-digital converters, IEEE International Conference on Electronics, Circuitsand Systems,2009:411-414
    [88] M. F. Snoeij, A. J. P. Theuwissen, K. A. A. Makinwa, et al, Multiple-rampcolumn-parallel ADC architectures for CMOS image sensors, IEEE Journal ofSolid-State Circuits,2009,42(12):2968-2977
    [89] S. H. Lewis, P. R. Gray, A pipelined5-Msample/s9-bit analog-to-digitalconverter, IEEE Journal of Solid-State Circuits,1987,22(6):954-961
    [90] M. Furuta, Y. Nishikawa, T. Inoue, A high-speed, high-sensitivity digital CMOSimage sensor with a global shutter and12-bit column-parallel cyclic A/D converters,IEEE Journal of Solid-State Circuits,2007,42(4):766-774
    [91] J. M. Martins, V. F. Dias, Very low-distortion fully differential switched-currentmemory cell, IEEE Transactions on Circuits and Systems-II: Analog and DigitalProcessing,1999,46(5):640-643
    [92] J. Yuan, Modeling, quantitative analysis, and design of switched-currentpipelined A/D converters, IEEE Transactions on Circuits and Systems-I: RegularPapers,2009,56(4):727-739
    [93] C. Sawigun, W. A. Serdjin,0.75V micro-power SI memory cell with feedthrougherror reduction, Electronics Letters,2008,44(9):561-562
    [94] C. Sawigun, W. A. Serdjin, Low-voltage, low-power, low switching error,class-AB switched current memory cell, Electronics Letters,2008,44(12):706-708
    [95] S. Ziabakhsh, H. A. Rad, M. A. Rad, et al, The design of a low-power high-speedcurrent comparator in0.35-μm CMOS technology, in Proc. Quality of ElectronicDesign,2009:107-111
    [96] J. Mahattanakul, S. Pookaiyaudon, C. You,azou, Understanding wilson currentmirror via the negative feedback approach, IEEE International Symposium on Circuitsand Systems,2001:532-535
    [97] W. Surakampontron, V. Riewruja, K. Kumwachara, et al, Accurate CMOS-basedcurrent conveyors, IEEE Transactions on Instrumentation and Measurement,1991,40(4):699-702

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