扩散硅压力传感器的有限元模拟与研究
摘要
随着现代科学技术的高速发展,汽车电子化、智能化的程度越来越高,传感器作为汽车控制系统的关键器件,其使用数量和技术水平决定了汽车控制系统的性能。本论文主要研究了一种扩散硅压力传感器,该传感器以硅薄膜为弹性膜,利用光刻、掩膜、溅射等微加工工艺和隔离封装方法制成。扩散硅压力传感器在汽车电子领域主要可用于检测发动机润滑油压力、轮胎空气压力、进气歧管压力、共轨压力等。本论文的主要研究内容包括:
(1)简述了硅的压阻效应、压阻系数等,在此基础上给出了压力传感器芯片的工作原理和电路结构,介绍了传感器芯片的常见结构以及制作的工艺流程;
(2)在有限元软件ABAQUS中通过详细的步骤对传感器芯片的应力、应变进行模拟分析,特别记录了一条路径上各节点的两个正交应力,分析了压敏电阻布置的最佳区域,粗略计算了芯片的灵敏度;
(3)简要介绍了阳极键合方法,分析了是否封接玻璃衬底对传感器输出的影响;分析了不同杨氏模量、不同厚度的贴片胶对传感器输出性能的影响;
(4)介绍了压力传感器的隔离式封装,通过有限元方法模拟了不同厚度、不同波纹厚度、不同波纹数的波纹膜片对传感器输出性能的影响;实验比较了封装不同参数波纹膜片时传感器的输出,选择了较优的一组参数;
(5)分别通过实验和模拟的方法作出了隔离式封装传感器的温度漂移曲线,设计了两种结构来改善传感器的温漂,有限元模拟的结果证明的结构的可行性。
Along with the rapid development of modern science and technology, automobile is becoming more and more electronic and intelligent. As the key device of automotive control system, the use quantity and technology level of sensor determine the automotive performance. A diffused silicon pressure sensor which adopts silicon wafer as elastic membrane, is developed by micromachining techniques such as photolithography, mask, sputtering etc. and methods of stress isolation package. The diffused silicon pressure sensors in automotive electronic field are mainly used to detect engine oil pressure, tire pressure,intake manifold pressure and common rail pressure etc. The thesis mainly comprises 4 parts:
(1) Based on the piezoresistive effect, piezoresistive coefficient of silicon, the working principle and the circuit structure of the sensor chip are briefly introduced. In addition, the fabrication processes of regular structure of the sensor chip are studied;
(2) The stress and strain of the sensor chip is simulated and analyzed by finite element software ABAQUS in detail. Two orthogonal stresses of each node on a specified path are recorded. Then the optimum region where the piezoresistive resistors are placed is analyzed and the sensitivity of the chip is approximately calculated;
(3) The method of anodic bonding is briefly introduced, and the impact on the sensor output whether the glass substrate packaged is analyzed. The change of the sensor output is investigated when respectively using different Young’s modulus and thickness of adhesive;
(4) Stress isolation package method is presented. The diaphragm thickness, corrugated depth and quantity which are the major parameters of corrugated diaphragm are respectively simulated to analyze the influence on the sensor output by ABAQUS. The outputs of sensor are compared by experiment when packaging different parameters of corrugated diaphragm, and the optimal one is chosen;
(5) The temperature drift curves of the stress isolated packaged sensor are presented by experiments and FEA respectively. Two kinds of structure are designed to improve the temperature drift of the sensor, finite element simulation results prove the feasibility of the structure.
(1)简述了硅的压阻效应、压阻系数等,在此基础上给出了压力传感器芯片的工作原理和电路结构,介绍了传感器芯片的常见结构以及制作的工艺流程;
(2)在有限元软件ABAQUS中通过详细的步骤对传感器芯片的应力、应变进行模拟分析,特别记录了一条路径上各节点的两个正交应力,分析了压敏电阻布置的最佳区域,粗略计算了芯片的灵敏度;
(3)简要介绍了阳极键合方法,分析了是否封接玻璃衬底对传感器输出的影响;分析了不同杨氏模量、不同厚度的贴片胶对传感器输出性能的影响;
(4)介绍了压力传感器的隔离式封装,通过有限元方法模拟了不同厚度、不同波纹厚度、不同波纹数的波纹膜片对传感器输出性能的影响;实验比较了封装不同参数波纹膜片时传感器的输出,选择了较优的一组参数;
(5)分别通过实验和模拟的方法作出了隔离式封装传感器的温度漂移曲线,设计了两种结构来改善传感器的温漂,有限元模拟的结果证明的结构的可行性。
Along with the rapid development of modern science and technology, automobile is becoming more and more electronic and intelligent. As the key device of automotive control system, the use quantity and technology level of sensor determine the automotive performance. A diffused silicon pressure sensor which adopts silicon wafer as elastic membrane, is developed by micromachining techniques such as photolithography, mask, sputtering etc. and methods of stress isolation package. The diffused silicon pressure sensors in automotive electronic field are mainly used to detect engine oil pressure, tire pressure,intake manifold pressure and common rail pressure etc. The thesis mainly comprises 4 parts:
(1) Based on the piezoresistive effect, piezoresistive coefficient of silicon, the working principle and the circuit structure of the sensor chip are briefly introduced. In addition, the fabrication processes of regular structure of the sensor chip are studied;
(2) The stress and strain of the sensor chip is simulated and analyzed by finite element software ABAQUS in detail. Two orthogonal stresses of each node on a specified path are recorded. Then the optimum region where the piezoresistive resistors are placed is analyzed and the sensitivity of the chip is approximately calculated;
(3) The method of anodic bonding is briefly introduced, and the impact on the sensor output whether the glass substrate packaged is analyzed. The change of the sensor output is investigated when respectively using different Young’s modulus and thickness of adhesive;
(4) Stress isolation package method is presented. The diaphragm thickness, corrugated depth and quantity which are the major parameters of corrugated diaphragm are respectively simulated to analyze the influence on the sensor output by ABAQUS. The outputs of sensor are compared by experiment when packaging different parameters of corrugated diaphragm, and the optimal one is chosen;
(5) The temperature drift curves of the stress isolated packaged sensor are presented by experiments and FEA respectively. Two kinds of structure are designed to improve the temperature drift of the sensor, finite element simulation results prove the feasibility of the structure.
引文
[1]袁希光.传感器技术手册[M].北京:国防工业出版社,1986.
[2]李科杰.新编传感器技术手册[M].北京:国防工业出版社,2002.
[3]关荣锋. MEMS器件设计、封装工艺及应用研究.:[博士论文].武汉:华中科技大学图书馆,2005.
[4]孙以材,刘玉岭,孟庆浩.压力传感器的设计制造与应用[M].北京:冶金工业出版社,2000.
[5]吕良,邓中量,刘玉德,辛洪兵.基于MEMS技术的汽车传感器研究进展[J].电工技术学报,2007, 22(4):77～79.
[6] Grace R. MEMS/MST provide updated solutions go many automotive application: the great migration from electromechanical and discrete approaches[J]. Mstnews, 2002 (10): 12～14.
[7] J.玛瑞克,H.P.特拉汉,Y.苏左克等.汽车传感器[M].左治江译.北京:化学工业出版社,2004.
[8] Robert Bosch Gmbh,Automotive Handbook,6th edition. Germany,2004:125～126.
[9]吴雄.汽车传MEMS感器的应用与发展[J].传感器世界,2002(3). 7～8.
[10] Theunissen M J,Appels J A and Verkylen WH C. Application of electrochemical etching of silicon to semi-conductor device technology[J].Electrochem Soc,1970, 177:959.
[11] K. E. Petersen.Silicon as a mechanical. Proc. IEEE 70,1982,420～570.
[12] C. S. Smith. Piezoresistive Effect in Germanium and Silicon. Phys. Rev. 1954, 94(1): 42～49.
[13]唐敏,黄刚.传感器技术的现状与未来[J].传感器世界, 1996.7, 12～16
[14]张维新,朱秀文等.半导体传感器[M].天津:天津大学出版社,1992.
[15]黄昆.固体物理学[M].北京:高等教育出版社,1988.
[16]刘恩科等.半导体物理学[M].上海:上海科学技术出版社,1984.
[17]孙建民,杨清梅编著.传感器技术[M].北京:清华大学出版社;北京交通大学出版社,2005.
[18] Peng Chih-Tang, Lin Ji-Cheng, Lin Chun-Te, et al. Investigation of Thermal Effect of Packaged CMOS Compatible Pressure Sensor. In: Proceeding of IMECE2002, ASME.New Orleans,Louisiana, 2002,39628.
[19] Xu Song,Liu Sheng. A Performance Prediction Model for a Piezoresistive Transducer Pressure Sensor. In: 5th International Conference on Electronics Packaging Technology. Shanghai, China, 2005. 30～35.
[20] G. Shuwen,T. Songshen,W. Wang. Temperature characteristics of microcrystalline and polycrystalline silicon pressure sensor. Sensors and Actuators A,1990,21(1): 133～136.
[21] M. Akbar,M.A. Shanblatt. Temperature compensation of piezoresistive pressure sensors. Sensors and Actuators A,1992,33(2):155～162.
[22] Stephen A.Campbell,微电子制造科学原理与工程技术[M].严利人,王纪民等译.北京:电子工业出版社,2003. 550～555.
[23] Wang Yaolin, Zheng Xinyu, Liu Litian et al. A Novel Structure of Pressure Sensors. IEEE Transactions On Electron Devices. 1991,38(8): 1797～1802.
[24] Kurt Petersen, Philip Barth, John Poydock,etc. Silicon Fusion Bonding for Pressure Sensors. IEEE Solid-State Sensor and Actuator, Hilton Head Island, SC, USA, 1988: 144～147.
[25]王勖成.有限单元法[M].北京:清华大学出版社,2003.
[26] Bathe K J. Finite Element Procedures in Engineering Analysis. Prentice-Hall, Inc.,1982.52~53.
[27] Zienkiewicz O C. The Finite Element Method,Third Edition. Mcgraw-Hill,Inc.1987.13~14.
[28] Huebner K H,Thornton E A. Finite Element Method for Engineers. John Wiley&Sons Inc.,1995.
[29] Turner M J,Clough R W,Martin H C,Topp L C.Stiffness and Deflection Analysis of Complex Structures.J.Aero.Sci.,1956,23:801~806.
[30]石亦平,周玉蓉. ABAQUS有限元分析实例详解[M].北京:机械工业出版社,2006.
[31]樊尚春,刘广玉.新型传感器技术及应用[M].北京:中国电力出版社,2005.
[32]徐德华,祝冰.压力传感器半导体薄膜电桥优化设计[J].传感器技术,1995,6:20～23.
[33] G. Wallis,D.I.Pomerantz. Field assisted glass-metal sealing. J Appl.Phys., 1969,40(10):3946~3969.
[34] T.R. Anthony. Dielectric isolation of silicon by anodic bonding. J.Appl.Phys.,1985, 58(3):1240~1247.
[35] J.Wei , H.Xie , C.K.Wong,et al. Nano-film assisted anodic bonding. Proc. ofSPIE.2000.4936:455~463.
[36] A.An,Y.Oh,S.Choi et al. Dual-axis microgyroscope with closed-loop detection. Sensor and Actuators A,1999,73(1):1~5.
[37]许东华,张兆华等.硅玻璃阳极键合绝压压阻式压力传感器中的残余应力[J].功能材料与器件学报.2008,Vol.(14): 452~455.
[38]电子封装技术丛书编委会,集成电路封装试验手册[M].北京:电子工业出版社.1998.50-70.
[39]中国电子学会生产技术学会分会丛书委员会.微电子封装技术[M].合肥:中国科学技术大学出版社,2003.
[40] Rao.Tummala.微系统封装技术[M].黄庆安,唐洁影译.南京:东南大学出版社,2004. 517～518.
[41] Sindlinger,Stefan. Effect of packaging on the uncertainty of measurement of miniaturised pressure sensors[J]. Tm-Technisches Messen 2004,71(4):240~248.
[42]刘沁,吕忠钢,陈艳文.扩散硅压力传感器结构设计及封装工艺研究[J].仪表技术与传感器,1996,(10): 18～19.
[43]张生才,姚素英,刘艳艳等.高温压力传感器固态隔离封装技术的研究[J].电子科技大学学报, 2002,31(2):196～199.
[44]刘元浩赵立波等.基于压力传感器封装的波纹膜片的结构研究[J].传感器世界.2008,12～13.
[45] C.д.波诺马廖夫,л. E.安德烈耶娃.机器及仪表弹性元件的计算[M].王鸿翔译.北京:化学工业出版社,1987.
[46]刘沁,吕忠钢,陈艳文.扩散硅压力传感器结构设计及封装工艺研究[J].仪表技术与传感器.1996,Vol(5):18～19.
[47] Dresbach C,Krombholz A,Ebert M,et,al. Mechanical properties of glass frit bonded micro packages[J]. Microsystem Technologies. 2006, 12(5): 473-480.
[48]阎旭强.隔离膜片特性及其对变送器性能的影响[J].石油化工自动化,1998,(4): 53～58.
[49] FU Xingming, LIU Sheng, WANG Xiaojun. The Effect of Mounting Stress on the Zero Point Output of Pressure Sensors. In: 7th International Conference on Electronics Packaging Technology. Shanghai: 2006. 630～633.
[50] Krueger S, Grace R. New challenges for microsystems-technology in automotive applications[J]. Mstnews,2001,(1):4~7.
[2]李科杰.新编传感器技术手册[M].北京:国防工业出版社,2002.
[3]关荣锋. MEMS器件设计、封装工艺及应用研究.:[博士论文].武汉:华中科技大学图书馆,2005.
[4]孙以材,刘玉岭,孟庆浩.压力传感器的设计制造与应用[M].北京:冶金工业出版社,2000.
[5]吕良,邓中量,刘玉德,辛洪兵.基于MEMS技术的汽车传感器研究进展[J].电工技术学报,2007, 22(4):77～79.
[6] Grace R. MEMS/MST provide updated solutions go many automotive application: the great migration from electromechanical and discrete approaches[J]. Mstnews, 2002 (10): 12～14.
[7] J.玛瑞克,H.P.特拉汉,Y.苏左克等.汽车传感器[M].左治江译.北京:化学工业出版社,2004.
[8] Robert Bosch Gmbh,Automotive Handbook,6th edition. Germany,2004:125～126.
[9]吴雄.汽车传MEMS感器的应用与发展[J].传感器世界,2002(3). 7～8.
[10] Theunissen M J,Appels J A and Verkylen WH C. Application of electrochemical etching of silicon to semi-conductor device technology[J].Electrochem Soc,1970, 177:959.
[11] K. E. Petersen.Silicon as a mechanical. Proc. IEEE 70,1982,420～570.
[12] C. S. Smith. Piezoresistive Effect in Germanium and Silicon. Phys. Rev. 1954, 94(1): 42～49.
[13]唐敏,黄刚.传感器技术的现状与未来[J].传感器世界, 1996.7, 12～16
[14]张维新,朱秀文等.半导体传感器[M].天津:天津大学出版社,1992.
[15]黄昆.固体物理学[M].北京:高等教育出版社,1988.
[16]刘恩科等.半导体物理学[M].上海:上海科学技术出版社,1984.
[17]孙建民,杨清梅编著.传感器技术[M].北京:清华大学出版社;北京交通大学出版社,2005.
[18] Peng Chih-Tang, Lin Ji-Cheng, Lin Chun-Te, et al. Investigation of Thermal Effect of Packaged CMOS Compatible Pressure Sensor. In: Proceeding of IMECE2002, ASME.New Orleans,Louisiana, 2002,39628.
[19] Xu Song,Liu Sheng. A Performance Prediction Model for a Piezoresistive Transducer Pressure Sensor. In: 5th International Conference on Electronics Packaging Technology. Shanghai, China, 2005. 30～35.
[20] G. Shuwen,T. Songshen,W. Wang. Temperature characteristics of microcrystalline and polycrystalline silicon pressure sensor. Sensors and Actuators A,1990,21(1): 133～136.
[21] M. Akbar,M.A. Shanblatt. Temperature compensation of piezoresistive pressure sensors. Sensors and Actuators A,1992,33(2):155～162.
[22] Stephen A.Campbell,微电子制造科学原理与工程技术[M].严利人,王纪民等译.北京:电子工业出版社,2003. 550～555.
[23] Wang Yaolin, Zheng Xinyu, Liu Litian et al. A Novel Structure of Pressure Sensors. IEEE Transactions On Electron Devices. 1991,38(8): 1797～1802.
[24] Kurt Petersen, Philip Barth, John Poydock,etc. Silicon Fusion Bonding for Pressure Sensors. IEEE Solid-State Sensor and Actuator, Hilton Head Island, SC, USA, 1988: 144～147.
[25]王勖成.有限单元法[M].北京:清华大学出版社,2003.
[26] Bathe K J. Finite Element Procedures in Engineering Analysis. Prentice-Hall, Inc.,1982.52~53.
[27] Zienkiewicz O C. The Finite Element Method,Third Edition. Mcgraw-Hill,Inc.1987.13~14.
[28] Huebner K H,Thornton E A. Finite Element Method for Engineers. John Wiley&Sons Inc.,1995.
[29] Turner M J,Clough R W,Martin H C,Topp L C.Stiffness and Deflection Analysis of Complex Structures.J.Aero.Sci.,1956,23:801~806.
[30]石亦平,周玉蓉. ABAQUS有限元分析实例详解[M].北京:机械工业出版社,2006.
[31]樊尚春,刘广玉.新型传感器技术及应用[M].北京:中国电力出版社,2005.
[32]徐德华,祝冰.压力传感器半导体薄膜电桥优化设计[J].传感器技术,1995,6:20～23.
[33] G. Wallis,D.I.Pomerantz. Field assisted glass-metal sealing. J Appl.Phys., 1969,40(10):3946~3969.
[34] T.R. Anthony. Dielectric isolation of silicon by anodic bonding. J.Appl.Phys.,1985, 58(3):1240~1247.
[35] J.Wei , H.Xie , C.K.Wong,et al. Nano-film assisted anodic bonding. Proc. ofSPIE.2000.4936:455~463.
[36] A.An,Y.Oh,S.Choi et al. Dual-axis microgyroscope with closed-loop detection. Sensor and Actuators A,1999,73(1):1~5.
[37]许东华,张兆华等.硅玻璃阳极键合绝压压阻式压力传感器中的残余应力[J].功能材料与器件学报.2008,Vol.(14): 452~455.
[38]电子封装技术丛书编委会,集成电路封装试验手册[M].北京:电子工业出版社.1998.50-70.
[39]中国电子学会生产技术学会分会丛书委员会.微电子封装技术[M].合肥:中国科学技术大学出版社,2003.
[40] Rao.Tummala.微系统封装技术[M].黄庆安,唐洁影译.南京:东南大学出版社,2004. 517～518.
[41] Sindlinger,Stefan. Effect of packaging on the uncertainty of measurement of miniaturised pressure sensors[J]. Tm-Technisches Messen 2004,71(4):240~248.
[42]刘沁,吕忠钢,陈艳文.扩散硅压力传感器结构设计及封装工艺研究[J].仪表技术与传感器,1996,(10): 18～19.
[43]张生才,姚素英,刘艳艳等.高温压力传感器固态隔离封装技术的研究[J].电子科技大学学报, 2002,31(2):196～199.
[44]刘元浩赵立波等.基于压力传感器封装的波纹膜片的结构研究[J].传感器世界.2008,12～13.
[45] C.д.波诺马廖夫,л. E.安德烈耶娃.机器及仪表弹性元件的计算[M].王鸿翔译.北京:化学工业出版社,1987.
[46]刘沁,吕忠钢,陈艳文.扩散硅压力传感器结构设计及封装工艺研究[J].仪表技术与传感器.1996,Vol(5):18～19.
[47] Dresbach C,Krombholz A,Ebert M,et,al. Mechanical properties of glass frit bonded micro packages[J]. Microsystem Technologies. 2006, 12(5): 473-480.
[48]阎旭强.隔离膜片特性及其对变送器性能的影响[J].石油化工自动化,1998,(4): 53～58.
[49] FU Xingming, LIU Sheng, WANG Xiaojun. The Effect of Mounting Stress on the Zero Point Output of Pressure Sensors. In: 7th International Conference on Electronics Packaging Technology. Shanghai: 2006. 630～633.
[50] Krueger S, Grace R. New challenges for microsystems-technology in automotive applications[J]. Mstnews,2001,(1):4~7.