一种1A双极型低压降线性稳压器XD1622的设计与研究
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摘要
便携式电子产品的普及和飞速发展使得高性能低成本的电源管理解决方案备受关注,新一代低压降(LDO)线性稳压器以其超低噪声、高PSRR、微功耗和极低的成本成为极具竞争力的电源方案之一,将在电源管理市场上占有重要的一席。
     本文设计了一款双极型低压降(LDO)线性稳压器XD1622,采用EPISIL 5μm BJT工艺,有较宽的输入电压范围(13V-29V),输出电压为12V,在典型负载电流(1A)情况下,压降仅为280mV,静态电流为4.6mA。提出了一种低功耗、高可靠性的限流电路,通过增加折返功能有效地降低了电路的功耗,与常规的恒定电流限制相比,该折返式电流限制不仅能使系统在限流状态下的功耗减小25%,且提高了系统的可靠性。另外,设计了过温保护电路和调整管安全工作区域保护电路,保证电路安全工作。
     文中首先论述了低压降线性稳压器XD1622的基本原理,以此为基础对系统设计进行整体考虑,构建了系统整体架构,并制定了芯片的设计指标。根据设计指标,论文详细设计了芯片内部电路模块,包括:带隙基准电压源、误差放大器、过温保护、过流保护和使能电路等,通过综合比较晶体管的性能,确定调整管的类型。然后对电路的所有子模块电路进行了详细分析,借助设计软件Hspice对子模块电路进行了完整的设计和模拟仿真,给出了合理的电路数据,各子模块电路的电特性均达到或优于设计指标。最后,对整体电路进行了联合仿真,模拟结果表明该电路完成了设计功能,达到了预先制定的设计指标。
The popularization and rapid growth of portable electronic products result in that more and more attention is now paid to power manage projects with the high performance and low cost. As a competitive kind of power management, the new generation of low dropout (LDO) linear regulator with ultra low noise, high PSRR, micropower loss and the lowest cost will be holding an important position.
     The object of this paper is to design a bipolar low dropout (LDO) linear regulator XD1622, which adopts EPISIL 5μm BJT technology. The input voltage range is as wide as from 13V to 29V, while the output is constant at 12V. The dropout voltage and quiescent current is only 280mV and 4.6mA respectively in 1A typical load current. A low-power, high reliability current limit circuit is proposed, which can effectively lower the power dissipation of the circuit. The circuit can reduce the power dissipation by 25% compared with the conventional constant current limit and enhance the reliability of the system with the application of fold back function. In addition, the thermal protection and safe operation area (SOA) protection of pass transistor are designed, which guarantee the electric circuit working in safe operation area (SOA).
     Firstly, the operational principle of the LDO linear regulator XD1622 is analyzed, based on which the systematic architecture of the whole chip is constructed and the specifications are given. According to the specifications, the internal modules of the chip are designed in detail including the bandgap voltage reference, the error amplifier, the thermal protection, the over-current protection and the enable circuit, etc. The type of the pass transistor is chose after comparing the characteristics of several kinds of transistors. And then the design of the sub-block circuits and the simulations using Hspice are presented in detail. Meanwhile, the parameters of the ciucuits are determined. The results show that the electric specifications of the sub-circuits all meet the prospective specifications. At last the simulations of the whole chip are presented and the simulation results indicate that the IC has realized its function and meet the prospective specifications.
引文
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