L波段低噪声放大器的研究
摘要
低噪声放大器(Low Noise Amplifier,LNA)是无线接收机的重要组成部分,它是接收机的第一个有源元件,其相关理论已经被人们研究数十年,到目前为止仍是热门话题。低噪放广泛地应用于宇宙通讯、雷达、电子对抗、遥测遥控、射电天文、大地测绘、微波通信等无线电通信系统中。LNA的主要作用是放大天线从天空中接收到的微弱信号,降低噪声干扰,以供系统解调出所需的信息数据。对低噪声放大器的基本要求是:噪声系数低、足够的功率增益、工作稳定性可靠、足够的带宽和大的动态范围等。此外,在不同的应用情况下,可能对其体积、重量、耗电量等等提出限制性要求。目前,低噪放还在向更高工作频率、更低的噪声、更宽的频带、集成化和标准化方向发展。
本文在线性二端口网络的理论基础上,总结了级联放大器研制中遇到的问题,包括放大器噪声系数的计算、匹配电路的设计以及提高晶体管稳定性的方法等等问题。应用微波电路仿真软件ADS设计了频率范围为1.9GHz-2.1GHz低噪声放大器,其性能指标为:噪声系数<1dB,带宽为200MHz,增益>30dB,增益波动在1.2dB以内,输入输出驻波比<1.5。该放大器采用Agilent公司的P-HEMT低噪声放大管ATF54143和集成放大器模块MGA86576进行了两级放大,在设计的过程中使用ADS商业软件对放大器的输入、输出匹配电路、偏置电路进行了设计、优化。文中分析了对放大器的几种常用拓扑结构优缺点,确立了微波分立元件与微带线相结合的混合电路应用模式和单电源供电的偏置电路结构;在稳定性的设计中引入了源级串联负反馈,提高了放大器的稳定性;采用双共轭匹配的方法对放大器进行了输入、输出匹配电路的设计,使其输入、输出阻抗都接近50欧的匹配;综合考虑了放大器的噪声系数、增益、稳定性和驻波比几个性能指标,对整体电路做了进一步的优化,仿真结果表明,放大器的噪声系数小于0.7dB,带内增益在36dB左右,增益平坦度小于1dB,输入回波损耗小于-18.5dB,输出回波损耗小于-20dB,LNA的性能良好。最后使用protel软件完成了低噪声放大器的PCB版图设计。
Low Noise Amplifier is one of the key components of the wireless Receiver, it is the first active component in the system. After several decades’research, it is still a hot topic. The Low Noise Amplifier is widely used in Universe Communication, Radars,Electronic Countermeasures, Telemetry and Remote Mapping , Radio Astronomy , Geodetic , Microwave Communications, etc. The main effect of the LNA is to amplify the weak signals received from the antenna, reduce the noise interference, so that the required information can be demodulated. The basic requirements of the LNA include: low noise figure, enough power gain, reliable work stability, sufficient bandwidth and the wide dynamic range. In addition, their volumes, weights, power consumptions, etc. may be restricted under the different applying condition. At present, the LNA is developed towards to the directions of the higher frequency, lower noise, wider bandwidth, more integration and standardization.
On the basis of the linear two-port network theory, several problems in development of the cascade amplifier which include the calculating of the noise coefficient, the designing of the matching circuit and the improving method of the stability of LNA, etc. are summarized in this paper. A low noise amplifier which has a frequency range of 1.9GHz to 2.1GHz was designed by using the microwave circuit simulation software Advanced Design System ,and the Performance Indexes are shown as follows: less than 1dB noise figure, 200MHz bandwidth, more than 30dB gain and the fluctuation within 1.2dB,less than 1.5dB input and output VWSR. This amplifier carries out two-stage amplification by using P-HEMT transistor ATF-54143 and the integrated amplifier module MGA86576 which manufactured by the Agilent company. In the design process, the input and output matching circuit of the amplifier and the bias circuit was designed and optimized by using ADS commercial software. The advantages and disadvantages of several common topologies of the amplifier were analyzed in the paper. The application mode of the hybrid circuit in which microwave discrete components combined with microstrip line was established as well as the bias circuit structure with single power supply. The source-level series negative feedback was introduced during the stability designment and the stability of the amplifier is improved. Conjugate matching technique is used in matching circuit designing in order to math with standard 50?. Considering several Performance Indexes including gain, NF, VSWR, the LNA is further optimized. The simulation result shows: the noise figure is less than 0.7dB, the gain is about 36dB, the input VSWR is less than -18.5dB, the output VSWR is less than -20dB, the properties of the LNA are good .The low noise amplifier's layout is obtained with protel software finally.
本文在线性二端口网络的理论基础上,总结了级联放大器研制中遇到的问题,包括放大器噪声系数的计算、匹配电路的设计以及提高晶体管稳定性的方法等等问题。应用微波电路仿真软件ADS设计了频率范围为1.9GHz-2.1GHz低噪声放大器,其性能指标为:噪声系数<1dB,带宽为200MHz,增益>30dB,增益波动在1.2dB以内,输入输出驻波比<1.5。该放大器采用Agilent公司的P-HEMT低噪声放大管ATF54143和集成放大器模块MGA86576进行了两级放大,在设计的过程中使用ADS商业软件对放大器的输入、输出匹配电路、偏置电路进行了设计、优化。文中分析了对放大器的几种常用拓扑结构优缺点,确立了微波分立元件与微带线相结合的混合电路应用模式和单电源供电的偏置电路结构;在稳定性的设计中引入了源级串联负反馈,提高了放大器的稳定性;采用双共轭匹配的方法对放大器进行了输入、输出匹配电路的设计,使其输入、输出阻抗都接近50欧的匹配;综合考虑了放大器的噪声系数、增益、稳定性和驻波比几个性能指标,对整体电路做了进一步的优化,仿真结果表明,放大器的噪声系数小于0.7dB,带内增益在36dB左右,增益平坦度小于1dB,输入回波损耗小于-18.5dB,输出回波损耗小于-20dB,LNA的性能良好。最后使用protel软件完成了低噪声放大器的PCB版图设计。
Low Noise Amplifier is one of the key components of the wireless Receiver, it is the first active component in the system. After several decades’research, it is still a hot topic. The Low Noise Amplifier is widely used in Universe Communication, Radars,Electronic Countermeasures, Telemetry and Remote Mapping , Radio Astronomy , Geodetic , Microwave Communications, etc. The main effect of the LNA is to amplify the weak signals received from the antenna, reduce the noise interference, so that the required information can be demodulated. The basic requirements of the LNA include: low noise figure, enough power gain, reliable work stability, sufficient bandwidth and the wide dynamic range. In addition, their volumes, weights, power consumptions, etc. may be restricted under the different applying condition. At present, the LNA is developed towards to the directions of the higher frequency, lower noise, wider bandwidth, more integration and standardization.
On the basis of the linear two-port network theory, several problems in development of the cascade amplifier which include the calculating of the noise coefficient, the designing of the matching circuit and the improving method of the stability of LNA, etc. are summarized in this paper. A low noise amplifier which has a frequency range of 1.9GHz to 2.1GHz was designed by using the microwave circuit simulation software Advanced Design System ,and the Performance Indexes are shown as follows: less than 1dB noise figure, 200MHz bandwidth, more than 30dB gain and the fluctuation within 1.2dB,less than 1.5dB input and output VWSR. This amplifier carries out two-stage amplification by using P-HEMT transistor ATF-54143 and the integrated amplifier module MGA86576 which manufactured by the Agilent company. In the design process, the input and output matching circuit of the amplifier and the bias circuit was designed and optimized by using ADS commercial software. The advantages and disadvantages of several common topologies of the amplifier were analyzed in the paper. The application mode of the hybrid circuit in which microwave discrete components combined with microstrip line was established as well as the bias circuit structure with single power supply. The source-level series negative feedback was introduced during the stability designment and the stability of the amplifier is improved. Conjugate matching technique is used in matching circuit designing in order to math with standard 50?. Considering several Performance Indexes including gain, NF, VSWR, the LNA is further optimized. The simulation result shows: the noise figure is less than 0.7dB, the gain is about 36dB, the input VSWR is less than -18.5dB, the output VSWR is less than -20dB, the properties of the LNA are good .The low noise amplifier's layout is obtained with protel software finally.
引文
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[2]方佩敏,张国华.最新集成电路应用指南[M].北京:电子工业出版社,2006年.
[3]陈天麒.微波低噪声晶体管放大器[M].人民邮电出版社,1983.01
[4] Hongtao Xu, A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier. IEEE. Microwave and wirless components letters[J].Vol.14.No.6.June 2004 P262~264.
[5] Gerald Hiller.Design with PIN Diodes[Z],Application Note APN1002, Alpha Industries Inc.
[6]党耀国. C频段常温HEMT-FET低噪声放大器[J].无线电工程.1997年第27卷第4期.P1~P4.
[7]邹涌泉. Ka波段低噪声放大器的研制[J].电讯技术.2001年第1期P29~30.
[8]王军贤. Ka频段低噪声放大器的设计[J].固体电子学研究与进展.1998年第18卷第3期.P280～284.
[9]李斌. L波段致冷低噪声放大器[J].中国科学院上海天文台年刊.2004年第25期.P128～134.
[10]彭龙新. S波段单片低噪声放大器[J].东南大学学报.2004年1月第34卷第1期.P5～9.
[11]彭龙新.宽带单片低噪声放大器[J].电子学报.2004年第11期P1934～1937.
[12] Jonathan B. Hacker, An Ultra-Low Power InAs/AlSb HEMT Ka-Band Low-Noise Amplifier.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS[J], VOL. 14, No. 4, APRIL 2004.P156~158.
[13]林敏. 2-GHzCMOS射频低噪声放大器的设计与测试[J].电子学2002年09期1278～1281.
[14] Yunseo Park,The Analysis of UWB SiGe HBT LNA for Its Noise, Linearity,and MinimumGroup Delay Variation.IEEE Transactions onn microwave theory and techniques[J],Vol.54.No.4 Appril .2006.P1687~1697.
[15] P.M. Smith.Status of InP HEMT technology for microwave receiver pplications[J].IEEE Trans. Microwave Theory Tech. 1996 P2328-2333.
[16] Agilent Technologies.Fundamentals of RF and microwave noise figure measurements[Z]. Application Note of Agilent Technologies,March 23,2004.
[17]“High Frequency Transistor: Noise and S-parameter Characterization”[Z], Agilent Technologies, AN5968-1411E, Nov 1999.
[18] K.Shirakawa,S.Ishibashi,Y.Kobayashi,F.Takeda.A New Planar Inductor with Ring-Connected Magnetic Core[J].IEEE Trans.Magnetics.1990,26(5):2268-2270.
[19] Ulrich L. Rohde. RF/Microwave circuit design for wirelss application[J]. John Willey & Sons.2000.
[20] Andrew Miceli.Wireless Technician’s Handbook[Z]. Artech House.2003.
[21]“High Frequency Transistor: GaAs FET Characteristics”[Z], Agilent Technologies, AN5966-0779E, Nov 1999.
[22] R. Lee Ross.Pseudomorphic HEMT Technology and Applications [M], Kluwer Academic Publishers, 1996.
[23] R. Grundbacher.0.1 um InP HEMT Devices and MMICs for Cryogenic Low Noise Amplifiers form X-Band to W-Band[J].submitted to 14th International Indium Phosphide andrelated materials conference, Stockholm, Sweden, May 2002.
[24] Ludwig, Reinhold.RF Circuit Design: Theory and Applications [J], Prentice Hall PTR, 2000.
[25] Christophe Risacher.Low Noise Cryogenic Amplifers and SIS Mixers for Radio-Astronomy Receivers [M]. Onsala Space Observatory, Technical Report 467L,Sweden 2003.
[26]李明洋.高IP3微波低噪声放大器的仿真设计[J].世界电子元器件,2003,(6).
[27]吴兴源,吴飞.改善放大电路噪声之探讨[J].电声技术,1994,10(4):42～45.
[28]曾昌禄.放大器输入电路的噪声分析[J].电讯技术,2000,(6):75～77.
[29] Reinhold Ludwig.射频电路设计-理论及应用[M].北京:电子工业出版社.2002,66-85,270-304,309-353.
[30] T.K.K.Kan,K.C.Mak,D.Ma and H.C.Luong.A 2-V 900MHz CMOS Mixer for GSM Receivers[J]. The 2000 IEEE Intemational Symposium on Circuits and Systems, Vol.1,pp.326-330.
[31] Guillermo Gonzalez著,白晓东译.微波晶体管放大器分析与设计[M].北京:清华大学出版社,2003.
[32] K W Eccleston. Port match optimization of low noise amplifier[J].microwave and optical technology letters ,2000,27(5):321～323.
[33]胡生,杨光发.卫星点时C波段低噪声放大器设计与分析[J].卫星电视,1994,12(1):30～32.
[34]《中国集成电路大全》编委会.微波集成电路[M].国防工业出版社,1995年,144-145.
[35] Thomas H. Lee著,余志平,周润德等译.CMOS射频集成电路设计.电子工业出版社. 2004: 37~38, 50,206-208.
[36] J.S.Goo,H.T.Ahn,D.Ludwig.A Noise Optimization Technique for Integrated Low-Noise Amplifiers[J].IEEE Journal of Solid-State Circuits.2002,37(8):994~1002.
[37] B.Razavi.RF Microelectronics[M].清华大学出版社(影映版),2003:14,16,20,5.
[38] W. Alan Davis.Radio Frequency Circuit Design[M]. John Willey & Sons.2001.
[39] Ladbrooke, Peter H.MMIC Design:GaAs FETs and JEMTs[M].Publisher Artech House Incorporated, 1989.
[40] Christophe Risacher.Low Noise Cryogenic Amplifers and SIS Mixers forRadio-Astronomy Receivers[R].Onsala Space Observatory, Technical Report 467L,Sweden 2003.
[41] Li En-ling,Chen Gui-can,Wang Jin-fu.Circuit Topology Analysis of CMOS LNA in Mobile Communication System[J].The journal of China Universities of Posts and Telecommunication,Vol.11,No.2,Jun.2004.
[42] JY-C. Chang, AA Abidi, and M.Gaitan. Large Suspended Inductors on Silicon and Their yse in a Z-um CMOS RF Amplifier[J]. IEEE Electron Device Lett. 1993, (14):246~248.
[43] R. Benton etc. GaAs MMICs for an Integrated GPS Front-End. GaAs-IC-Symp[M].Dig. Tech. Pagers. 1992:123~126
[44] Derek K. Shaeffer, Thomas H. Lee.A 1.5V,1.5GHz CMOS Low Noise Amplifier[J].IEEE Journal of Solid-State circuits.1997, 32(5):745~759.
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