绝缘栅双极型晶体管的设计与研究
摘要
绝缘栅双极型晶体管(IGBT, Insulated Gate Bipolar Transistor)由于其较高的开关速度、较低的功率损耗以及易于控制和驱动而广泛应用于电力电子领域。尽管三十年来IGBT技术不断发展,性能不断提升,但国内IGBT芯片的设计与制造还处于起步阶段。极大的市场需求与落后的制造水平成为国内IGBT领域的突出矛盾,但同时也是我国发展IGBT产业的巨大动力。
本文从IGBT基本工作原理出发,阐述了IGBT的发展历程,并通过解剖市场现有IGBT芯片,清晰的展示了IGBT芯片内部结构。文中主要使用Silvaco公司的TCAD软件进行仿真工作,研究了器件结构对器件特性的影响,基于此设计了一款1200V非穿通型IGBT结构,主要包括元胞设计和终端设计,同时结合当前国内工艺条件水平,本文还设计了IGBT的工艺制造流程以及IGBT芯片版图。通过以上工作,本文基本覆盖了IGBT芯片设计的全部流程。
在文章最后部分,分析比较了目前硅单晶制造方法中的直拉法、区熔法以及磁场直拉法,提出用磁场直拉单晶硅制造IGBT芯片,并通过仿真分析电阻率不均匀分布对IGBT击穿电压的影响,验证了这一方案的可行性。
On account of the high switching speed, lower power loss as well as easily being controlled and driven, the Insulated Gate Bipolar Transistor(IGBT) has been widely used in the field of power electronics.Though IGBT manufacturing technology has been developed continuously in the last three decades, the huge market demand and the low production level still challenge the prosperity of IGBT field in China, at the same time fostering the growth in this field.
In this paper, the development of IGBT is briefly reviewed, based on IGBT's fundamental working principles. And the internal structure is clearly illuminated by dissecting a 1200V IGBT chip.
All simulation work is based on Silvaco TCAD, including designing the structure parameters of IGBT cells and termination. The manufacturing process and the layout of 1200V IGBT were also designed.
In the last part of this paper, there is a comparison among the Czochralski, Float Zone and Magnetic Czochralski crystals. And it proposed that manufacture IGBT wafer using Magnetic Czochralski method. With the help of Silvaco software, some simulation work on non-uniform distribution of resistivity of IGBT were finished.
本文从IGBT基本工作原理出发,阐述了IGBT的发展历程,并通过解剖市场现有IGBT芯片,清晰的展示了IGBT芯片内部结构。文中主要使用Silvaco公司的TCAD软件进行仿真工作,研究了器件结构对器件特性的影响,基于此设计了一款1200V非穿通型IGBT结构,主要包括元胞设计和终端设计,同时结合当前国内工艺条件水平,本文还设计了IGBT的工艺制造流程以及IGBT芯片版图。通过以上工作,本文基本覆盖了IGBT芯片设计的全部流程。
在文章最后部分,分析比较了目前硅单晶制造方法中的直拉法、区熔法以及磁场直拉法,提出用磁场直拉单晶硅制造IGBT芯片,并通过仿真分析电阻率不均匀分布对IGBT击穿电压的影响,验证了这一方案的可行性。
On account of the high switching speed, lower power loss as well as easily being controlled and driven, the Insulated Gate Bipolar Transistor(IGBT) has been widely used in the field of power electronics.Though IGBT manufacturing technology has been developed continuously in the last three decades, the huge market demand and the low production level still challenge the prosperity of IGBT field in China, at the same time fostering the growth in this field.
In this paper, the development of IGBT is briefly reviewed, based on IGBT's fundamental working principles. And the internal structure is clearly illuminated by dissecting a 1200V IGBT chip.
All simulation work is based on Silvaco TCAD, including designing the structure parameters of IGBT cells and termination. The manufacturing process and the layout of 1200V IGBT were also designed.
In the last part of this paper, there is a comparison among the Czochralski, Float Zone and Magnetic Czochralski crystals. And it proposed that manufacture IGBT wafer using Magnetic Czochralski method. With the help of Silvaco software, some simulation work on non-uniform distribution of resistivity of IGBT were finished.
引文
[1]Z. Y. Wang, "The Accomplishment of IGBT's Conception Is a Mileston of Power Electronics Technology Towards the High Power-High Frequencilization," Power Electronics,2003, vol.1, no. 3/4, pp.58-61.
[2]袁寿财,IGBT场效应半导体器件导论.北京：科学出版社,2007,pp.20-22,193-205.
[3]B. J. Baliga, Fundamentals of Power Semconductor Devices. New York:Springer Springer+ Business Media, LLC,2008. pp.739,281.
[4]L. J. Ye, M. Zou., and X. H. Yang, "Review on Development of IGBT Technology," Semiconductor Technology,2008, vol.33, no.11, pp.937-939.
[5]Y. Cheng, Y. Wu, X. M. Liu, Z. Wang, B. W. Kang, J. F. Li, and Z. S. Han "A New Structure IGBT with High Performance," Chinese Journal of Semiconductors,2003, vol.24, no.6, pp.138-142.
[6]G. Miller, and J. Sack, "A new concept for a non punch through IGBT with MOSFET like switching characteristics," PESC' 88 Record,1989, vol.1, pp.21-25.
[7]D. Burns, I. Deram, J. Mello, J. Morgan, I. Wan, and F. Robb, "NPT-IGBT-optimizing for manufacturability," Proceedings of the 8th ISPSD,1996, pp.331-334.
[8]E.Suekawa, Y. Tomomatsu, T. Enjoji, H. Kondoh, M. Takeda, and T.Yamada, "High Voltage IGBT(HV-IGBT) having p+/p-collector region," Proceedings of the 10th ISPSD,1998, pp.249-252.
[9]X. H. Lu, "Research on a new structure Lower Power Loss IGBT" Master, Beijing University of Technology, Beijing,2001, pp.6-8.
[10]V. Benda, J. Gowar, and D. A. Grant, Power Semiconductor Devices:Theroy and Applications. Beijing:Chemical Industry Press,2005. pp.273-276.
[11]杨玲玲,“新型IGBT器件的设计与建模,” 厦门大学硕士学位论文,厦门,2009,pp.12-15.
[12]H. H. Xue, "Dissection and Analysis of An IGBT Chip," Master, Harbin Insititute of Technology, Harbin,2009. pp.22-23.
[13]Z. Q. Zhang, S. H. Li, and X. L. Zhang, "Analysis on Epitaxy Wafer Thickness Error Measuring in Spreading Resistance Profile," Semiconductor Technology,2008, vol.33 no.10, pp. 905-908.
[14]K. Sheng, "Design, Modelling and Application of the IGBT" Doctor of Philosophy, Heriot-Watt University, Edinburgh,1999, pp.7-34.
[15]C. M. Hu, M. H. Chi, and V. M. Patel, "Optimum Design of Power MOSFET's," Transactions of Electron Devices,1984, vol. ED-31, no.12, pp.1693-1700.
[16]L. H. Zhu, Q. Jiang, and X. B. Chen, "Design of IGBT Cell with Wider Safe Operating Area," Microelectronics,2010, vol.10, no.6, pp.904-907.
[17]Y. Tang, A. Hu, and M. Chen, "IGBT Gate Characteristics and Parameter Extraction Methods," Transactions of China Electrotechnical Society,2009, vol.24, pp.76-80.
[18]Y. X. Guan, and X. L. Jiang, "Effect of the gate width to the IGBTon state voltage drop," Electronic Design Engineering,2011. vol.19, no.22. pp.115-117.
[19]邵红," 1200V VDMOS器件及工艺研究,” 东南大学硕士学位论文,南京,2007,pp.9-13.
[20]T. Tanaka, Y. Mochizuki, and M. Okamura, "Analysis of a Junction Termination Structure for Ideal Breakdown Voltage in p-n Junction Devices," IEEE Transactions on Electron Devices,1980, vol. ED-27. no.1, pp.261-263.
[21]L. Theolier, H. Mahfoz-Kotb, K. Isoird, F. Morancho, S. Assie-Souleille, and N. Mauran, "A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene," IEEE Electron Device Letters,2009, vol.30, no.6, pp.687-690.
[22]D. Jaume, G. Charitat, J. M. Reynes, and P. Rossel, "High-voltage planar devices using field plate and semi-resistive layers," IEEE Trans. Electron Devices,1991, vol.38, no.7, pp.1681-1684. [23] V. A. K. Temple, W. Tantraporn, "Junction termination extension for the near-ideal breakdown voltage in p-n junction," IEEE Trans. Electron Devices,1986, vol. ED-33, no.10, pp.1601-1608.
[24]X. Y. Yan, X. Q. Tang, and Y. J. Hua, "Optimum Design of Breakdown Voltage of High-Voltage VDMOSFET," Nanoelectronic Device&Technology,2008, vol.45, no.10, pp.577-585.
[25]J. J. Lu, "Simulation and Process of Junction Termination Techniques of 1700 V IGBT," Mater, Shenyang University of Technology, Shenyang,2009, pp.10-17.
[26]K. R. Davis, R. D. Schrimpf, F. E. Cellier, K. F. Galloway, D. I. Burton, and C. F. Wheatley, "The Effects Of Ionizing Radiation On Power-MOSFET Termination Structures," IEEE Trans. on Nuclear Scinece,1989, vol.36, no.6, pp.2104-2109.
[27]C. B. Goud, and K. N. Bhat, "Two-dimensional analysis and design consideration of high-voltage planar junctions equipped with field plate and guard ring," IEEE Trans. Electron Devices, 1991, vol.38, no.6, pp.1497-1504.
[28]J. He, M. S. Chan, X. Zhang, and Y. Y. Wang, "A new analytic method to design multiple floating field limiting rings of power devices," Solid-State Electronics,2006, vol.50, pp.1375-1381.
[29]W. Zhang, and J. S. Zhang, "Research on Junction Termination Design for Power VDMOSFETs," Journal ofLiaoNing University,2006, vol.33, no.2, pp.180-186.
[30]X. J. Zhou, W. F. Sun, "Design of 300V IGBT," Chinese Journal of Electron Devices,2007, vol. 30, no.6, pp.2092-2095.
[31]A. Hastings, The Art Analog Layout. Beijing:Publishing House of Electronics Industry,2006, pp.430-476.
[32]吴滔,“绝缘栅双极晶体管(IGBT)的研究与设计,” 浙江大学硕士学位论文,杭州,2005,pp.69-75.
[33]S. C. Yuan, X. B. Wang, and X. R. Liu, "Resarch for 800V/10A and 1200V/6A IGBT," Power Electronics,1994, vol.1, pp.58-60.
[34]杨东林,"700V VDMOS设计,” 东南大学硕士学位论文,南京.2007,pp.41-45.
[35]田达晰,“直拉单晶硅的晶体生长及缺陷,” 浙江大学博士学位论文,杭州,2009,pp.5-6.
[36]C. X. Hu, J. L. Xia, and J. Y. Zhang, "Progress of the Study on the Behaviors of Oxygen in Silicon," ShangHai Nonferrous Metals,1995, vol.16, no.l, pp.39-47.
[37]R. H. Jiang, and S. Z. Xiao, "Development and trend of semiconductor Si material," Semiconductor Technology,2002, vol.27, no.2, pp.3-5.
[38]M. Watanabe, D. Vizman, J. Friedrich, and G. Muller, "Large modification of crystal-melt interface shape during Si crystal growth by using electromagnetic Czochralski method(EMCZ)," Cystal Growth,2006, vol.292, pp.252-256.
[39]H. F. Liu, K. N. Suo, J. H. Dong, Y. Liu, H. Liu, and G. Gao, "Investigation of the Resistivity Uniformity Influenced by Impurity Segregation in FZ-Si," Semiconductor Technology,2009, vol.34, no.4, pp.320-323.
[40]S. Takasu, K. Homma, and E. Toji, "Neutron transmuted magnetic Czochralski grown silicon wafer for power device," PESC '88 Record,1988, vol.2, pp.1339-1345.
[2]袁寿财,IGBT场效应半导体器件导论.北京：科学出版社,2007,pp.20-22,193-205.
[3]B. J. Baliga, Fundamentals of Power Semconductor Devices. New York:Springer Springer+ Business Media, LLC,2008. pp.739,281.
[4]L. J. Ye, M. Zou., and X. H. Yang, "Review on Development of IGBT Technology," Semiconductor Technology,2008, vol.33, no.11, pp.937-939.
[5]Y. Cheng, Y. Wu, X. M. Liu, Z. Wang, B. W. Kang, J. F. Li, and Z. S. Han "A New Structure IGBT with High Performance," Chinese Journal of Semiconductors,2003, vol.24, no.6, pp.138-142.
[6]G. Miller, and J. Sack, "A new concept for a non punch through IGBT with MOSFET like switching characteristics," PESC' 88 Record,1989, vol.1, pp.21-25.
[7]D. Burns, I. Deram, J. Mello, J. Morgan, I. Wan, and F. Robb, "NPT-IGBT-optimizing for manufacturability," Proceedings of the 8th ISPSD,1996, pp.331-334.
[8]E.Suekawa, Y. Tomomatsu, T. Enjoji, H. Kondoh, M. Takeda, and T.Yamada, "High Voltage IGBT(HV-IGBT) having p+/p-collector region," Proceedings of the 10th ISPSD,1998, pp.249-252.
[9]X. H. Lu, "Research on a new structure Lower Power Loss IGBT" Master, Beijing University of Technology, Beijing,2001, pp.6-8.
[10]V. Benda, J. Gowar, and D. A. Grant, Power Semiconductor Devices:Theroy and Applications. Beijing:Chemical Industry Press,2005. pp.273-276.
[11]杨玲玲,“新型IGBT器件的设计与建模,” 厦门大学硕士学位论文,厦门,2009,pp.12-15.
[12]H. H. Xue, "Dissection and Analysis of An IGBT Chip," Master, Harbin Insititute of Technology, Harbin,2009. pp.22-23.
[13]Z. Q. Zhang, S. H. Li, and X. L. Zhang, "Analysis on Epitaxy Wafer Thickness Error Measuring in Spreading Resistance Profile," Semiconductor Technology,2008, vol.33 no.10, pp. 905-908.
[14]K. Sheng, "Design, Modelling and Application of the IGBT" Doctor of Philosophy, Heriot-Watt University, Edinburgh,1999, pp.7-34.
[15]C. M. Hu, M. H. Chi, and V. M. Patel, "Optimum Design of Power MOSFET's," Transactions of Electron Devices,1984, vol. ED-31, no.12, pp.1693-1700.
[16]L. H. Zhu, Q. Jiang, and X. B. Chen, "Design of IGBT Cell with Wider Safe Operating Area," Microelectronics,2010, vol.10, no.6, pp.904-907.
[17]Y. Tang, A. Hu, and M. Chen, "IGBT Gate Characteristics and Parameter Extraction Methods," Transactions of China Electrotechnical Society,2009, vol.24, pp.76-80.
[18]Y. X. Guan, and X. L. Jiang, "Effect of the gate width to the IGBTon state voltage drop," Electronic Design Engineering,2011. vol.19, no.22. pp.115-117.
[19]邵红," 1200V VDMOS器件及工艺研究,” 东南大学硕士学位论文,南京,2007,pp.9-13.
[20]T. Tanaka, Y. Mochizuki, and M. Okamura, "Analysis of a Junction Termination Structure for Ideal Breakdown Voltage in p-n Junction Devices," IEEE Transactions on Electron Devices,1980, vol. ED-27. no.1, pp.261-263.
[21]L. Theolier, H. Mahfoz-Kotb, K. Isoird, F. Morancho, S. Assie-Souleille, and N. Mauran, "A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene," IEEE Electron Device Letters,2009, vol.30, no.6, pp.687-690.
[22]D. Jaume, G. Charitat, J. M. Reynes, and P. Rossel, "High-voltage planar devices using field plate and semi-resistive layers," IEEE Trans. Electron Devices,1991, vol.38, no.7, pp.1681-1684. [23] V. A. K. Temple, W. Tantraporn, "Junction termination extension for the near-ideal breakdown voltage in p-n junction," IEEE Trans. Electron Devices,1986, vol. ED-33, no.10, pp.1601-1608.
[24]X. Y. Yan, X. Q. Tang, and Y. J. Hua, "Optimum Design of Breakdown Voltage of High-Voltage VDMOSFET," Nanoelectronic Device&Technology,2008, vol.45, no.10, pp.577-585.
[25]J. J. Lu, "Simulation and Process of Junction Termination Techniques of 1700 V IGBT," Mater, Shenyang University of Technology, Shenyang,2009, pp.10-17.
[26]K. R. Davis, R. D. Schrimpf, F. E. Cellier, K. F. Galloway, D. I. Burton, and C. F. Wheatley, "The Effects Of Ionizing Radiation On Power-MOSFET Termination Structures," IEEE Trans. on Nuclear Scinece,1989, vol.36, no.6, pp.2104-2109.
[27]C. B. Goud, and K. N. Bhat, "Two-dimensional analysis and design consideration of high-voltage planar junctions equipped with field plate and guard ring," IEEE Trans. Electron Devices, 1991, vol.38, no.6, pp.1497-1504.
[28]J. He, M. S. Chan, X. Zhang, and Y. Y. Wang, "A new analytic method to design multiple floating field limiting rings of power devices," Solid-State Electronics,2006, vol.50, pp.1375-1381.
[29]W. Zhang, and J. S. Zhang, "Research on Junction Termination Design for Power VDMOSFETs," Journal ofLiaoNing University,2006, vol.33, no.2, pp.180-186.
[30]X. J. Zhou, W. F. Sun, "Design of 300V IGBT," Chinese Journal of Electron Devices,2007, vol. 30, no.6, pp.2092-2095.
[31]A. Hastings, The Art Analog Layout. Beijing:Publishing House of Electronics Industry,2006, pp.430-476.
[32]吴滔,“绝缘栅双极晶体管(IGBT)的研究与设计,” 浙江大学硕士学位论文,杭州,2005,pp.69-75.
[33]S. C. Yuan, X. B. Wang, and X. R. Liu, "Resarch for 800V/10A and 1200V/6A IGBT," Power Electronics,1994, vol.1, pp.58-60.
[34]杨东林,"700V VDMOS设计,” 东南大学硕士学位论文,南京.2007,pp.41-45.
[35]田达晰,“直拉单晶硅的晶体生长及缺陷,” 浙江大学博士学位论文,杭州,2009,pp.5-6.
[36]C. X. Hu, J. L. Xia, and J. Y. Zhang, "Progress of the Study on the Behaviors of Oxygen in Silicon," ShangHai Nonferrous Metals,1995, vol.16, no.l, pp.39-47.
[37]R. H. Jiang, and S. Z. Xiao, "Development and trend of semiconductor Si material," Semiconductor Technology,2002, vol.27, no.2, pp.3-5.
[38]M. Watanabe, D. Vizman, J. Friedrich, and G. Muller, "Large modification of crystal-melt interface shape during Si crystal growth by using electromagnetic Czochralski method(EMCZ)," Cystal Growth,2006, vol.292, pp.252-256.
[39]H. F. Liu, K. N. Suo, J. H. Dong, Y. Liu, H. Liu, and G. Gao, "Investigation of the Resistivity Uniformity Influenced by Impurity Segregation in FZ-Si," Semiconductor Technology,2009, vol.34, no.4, pp.320-323.
[40]S. Takasu, K. Homma, and E. Toji, "Neutron transmuted magnetic Czochralski grown silicon wafer for power device," PESC '88 Record,1988, vol.2, pp.1339-1345.