单粒子效应的脉冲激光试验研究
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摘要
脉冲激光被证实能够有效地获得测试器件及电路内部单粒子效应的空间和时间信息,是器件和电路系统抗单粒子效应加固设计及验证的重要手段,系统开展其试验研究对单粒子效应研究及航天工程的发展具有深远意义。
     对单粒子效应研究背景及脉冲激光试验研究概况进行了分析,利用国内首台自主研制的脉冲激光装置开展了系列试验研究。对现有脉冲激光模拟单粒子效应机理进行了完善,分析了影响脉冲激光试验定量表述的各个影响因素,与重离子模拟单粒子效应对比,建立了更普适的定量评价方法。基于系列试验和测试设备的研发,进行了单粒子效应器件预处理、阈值测定及敏感区域定位、截面测试等脉冲激光试验方法的研究。以单粒子瞬态脉冲(SET)试验测试为例,总结形成了基本的脉冲激光单粒子效应试验流程。试验分析了不同结构功能的典型器件与电路单粒子效应的主要特点,验证了脉冲激光试验方法的覆盖性及统一性,重点试验研究了光电器件、模拟电路及电源模块的SET效应。针对模拟电路的SET效应进行了晶体管级电路仿真,并建立了基础的器件仿真基础及验证方法。设计了瞬态脉冲加固电路并通过故障注入进行了验证。同时归纳了脉冲激光试验结果中的瞬态脉冲特征规律,据此设计了新型的单粒子效应探测技术。最后总结全文,展望了未来TPA试验方法及数字器件SET效应等方面的试验和研究。
     本论文工作的主要创新点如下:
     首次提出了体积能量传输(VET)的概念,对定量表征单粒子效应更具普适性和准确性;在国际上首次利用脉冲激光研究了光电器件的单粒子瞬态效应(SET)及其电路防护原理、取得了与重离子实验等效的结果;在国内率先研究了模拟电路的SET效应灵敏区三维扫描和敏感度定量测试方法与技术,获得了基本的SET特征并设计了电路系统级减缓方法;利用脉冲激光的定位优势,揭示了电源模块内部不同的敏感器件的单粒子效应及对电源输出影响的特点;在国际上首次开展了基于光耦器件SET效应的单粒子效应探测新方法研究,设计了一种能够测量一定LET值动态范围、电路实现简单、易于微小型化的探测仪。
Pulsed laser Technique has been proved as an effective tool to provide both spatial and temporal information of single event effects (SEEs) in the internal device and circuit. It is essential to evaluate and mitigate the SEEs in microelectronic circuitry for space science and engineering.
     In this thesis, the experimental research on SEEs is performed on the Chinese first pulsed laser SEE experimental device based on independent technology. An overview of SEE research and the pulse laser simulation background are provided. The present mechanism is developed by adding comprehensive correction coefficients in the calculation of equivalent LET which affect the effective quantitative expression. And a novel universal quantitative evaluation method is proposed in terms of Volume Energy Transfer (VET). Based on the series of test device evolution, the experimental method including devices preproccess, threshold measurement,sensitive regional orientation and cross section test are completed. The basic pulse laser SEE test process is summarized on the study the single event transient (SET) test. Experiment with different structure or function analysis of typical devices and circuits are investigated, especially, for photoelectric devices, analog circuits and power supply sub-systems. The circuit simulations in the thesis focus on the analog circuit SET effects, and the preliminary device simulation verified framework and methods are performed. The designed circuit mitigation method is verified by fault injection with pulsed laser. In accordance with the pulse laser test results of the transient pulses, a novel technique for exploing the SEEs on board is proposed. Finally, we give the full summary and the related experimental research prospect.
     The specific innovation points as follows:
     During the research of pulsed laser quantitative expression process, the correction coefficients of equivalent LET were well designed by the consideration of both subject devices and pulsed laser. And the novel VET expression could make a more accurate quantitative evaluation on SEEs. We launched the first international pulse laser SEEs test of photoelectric devices and the radiation circuit hardening, and the results were similar with the heavy ions data. The regional three-dimensional localization method and the test tenique of both LET threshold and cross section were firstly established, which made an effective realization of the quantitative estimation sensitive volume. The international pulse laser SEEs test of anolog circuits and the relevant units of power supply sub-systems were tested, and the devices and circuits output raw test data showed the characteristics of the inter different sensitive devices. A novel detector based on the optocoupler for exploing the SEEs on board was proposed with active monitoring space flight testing, the circuit was much more casual and smaller which can detect certain dynamic single event effects scope.
引文
[1]中国科学院,科技革命与中国现代化:关于中国面向2050年科技发展战略的思考(第一版).北京,科学出版社,2009,5:24-63
    [1] J.T.Wallmark and S.M.Marcus. Minimum size and maximum packing density of nonredundant semiconductor device. 1962, Proc.IRE,50:286-298.
    [2] Binder D, Smith E C, and Holman A B. Satellite anomalies from galactic cosmic rays. IEEE Trans. Nuclear Science,1975, 22(6): 2675-2679.
    [3] Kolasinski W A, Blake J B, Anthony J K, et al. Simulation of Cosmic Ray Induced Soft Errors and Latch-up in Integrated Circuit Computer Memories. IEEE Trans. Nuclear Science,1979, 26(6):5087-5091.
    [4] Waskiewicz A E, Groninger J W, Strahan V H, et al. Burnout of Power MOS Transistors with Heavy Ions of Californium-252. IEEE Trans. Nuclear Science,1986, 33(6): 1710-1713.
    [5] Fischer T A. Heavy-Ion-Induced Gate-Rupture in Power MOSFETs. IEEE Trans. Nuclear Science,1987, 34(6): 1786-1791.
    [6] R. Koga, S. D. Pinkerton, S. C. Moss, D. C. Mayer, S. Lalumondiere, S. J. Hansel, K. B. Crawford, W.R. Crain,“Observation of Single Event Upsets in Analog Microcircuits,”IEEE Trans. On Nucl. Sci. , Dec.1993 vol. 40, 6, pp. 1838~1844.
    [7]王丽君,空间电子学的单粒子效应,空间电子技术,1998,4:1-11
    [8] http://en.wikipedia.org/wiki/Abundance_of_the_chemical_elements
    [9] Wilson J, Townsend L, S chimmerling W, et al. Transport Methods and Interactions for Space Radiations. Reference Publication - 1257, Dec. 1991
    [10] Flückiger E. Solar and terrestrial modulation. Proc. 22nd Int. Cosmic Ray Conf., 1991:273
    [11] McKibben R B. Galactic cosmic rays and anomalous components in the heliosphere. Rev.Geophys. ,1987, 25(3): 711
    [12] Potgieter M. Modulation of cosmic rays in the heliosphere. Proc.23rd Int. Cosmic Ray Conf. Inviter Paper, 1993:213
    [13] Webber W R. Cosmic rays in the heliosphere. Essays in space science, NASA Goddard Space Flight Center, Greenbeld, MD, 1987:125
    [14]涂传诒等,日地空间物理学(第一版),北京科学出版社,1988,1:33-40
    [15] Andrews, M. D., A search for CMEs associated with big flares, in Solar Physics, 2003, 218, p 261-279
    [16] Vourlidas, A., Wu, S.T., Wang, etc.Direct Detection of a Coronal Mass Ejection-Associated Shock in Large Angle and Spectrometric Coronagraph Experiment White-Light Images in the Astrophysical Journal, 2003. 598, 2, 1392-1402
    [17]蔡振波.新型航天器抗辐射加固技术的研究重点.航天器环境工程,2010,27(2):173-176
    [18] Janet L. Barth,Kenneth A. LaBel,Spacecraft Instruments Design and Operations, NASA Goddard Space Flight Center Flight Electronics Branch,July 23,2002
    [19] Vampola A L. The hazardous space particle environment. IEEE trans. Plasma Science, 2000, 28(6):1831
    [20] Stassinopoulos E G, Verzariu P. General formula for decay lifetimes of Starfish electrons. J. Geophys. Res. 1971, 76:1841
    [21] Vampola A L. Natural variations in the geomagnetically trapped electron population. Proc.Nat.Symp. Natural Manmade Radiation Space, E A Warman Ed. 1972
    [22] Poivey C. Radiation hardness assurance for space systems[G].SGT Inc,NASA GSFC
    [23] ECSS-E-10-12 (Draft 0.20), Space engineering-Methods for the calculation of radiation received and its effects,and a policy for design margins[S], 2008-03-05
    [24] Allen.J.H etal. Solar - Terrestrial Predictions - IV Proceedings of a Workshop of NOAA/ ERL. 1993,1-:75, Boulder, Colorado, USA.
    [25] Liam Sarfield, Critical Technologies Institute, The Cosmos on a Shoestring: Small Spacecraft for Space and Earth Science, 1998.
    [26] U.S Dept of Commerce, Service assessment - Intense space weather storms October 19–November 07, 2003, NOAA, April 2004.
    [27] H. C. Koons, J. E. Mazur, etal. The Impact of The Space Environments on the Space Systems, Aerospace Report, TR-99-1670-1, 20 July, 1999.
    [28] http://www.seelab.ac.cn
    [29] Dressendorfer P V. Basic Mechanisms for the New Millenium. IEEE NSREC Short Course,1998.
    [30] EIA/JEDEC STANDARD, "Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation," Electronic Industries Association, Engineering Department, Arlington, VA, 1996
    [31]中国科学院空间领域战略研究组,中国至2050年空间科技发展路线图(第一版).北京,科学出版社,2009,6:23-78
    [32] Weaver H T, Axness C L, McBrayer J D, et al. An SEU Tolerant Memory Cell Derived from Fundamental Studies of SEU Mechanisms in SRAM. IEEE Trans. Nuclear Science,1987, 34(6):1281-1286.
    [33] P E Dodd and L W. Massengill, Basic Mechanisms and Modeling of Single-Event Upset in Digital Microelectronics IEEE Trans. Nuclear Science, 2003,50(3):583-602.
    [34] Label K A and Gates M M. Single Event Effect Mitigation from a System Perspective. IEEE Trans. Nuclear Science,1996,43(2):654-660.
    [35] Kenneth. A. Label, Single Event Effect Criticality Analysis, Http://flick.gsfc.nasa.gov/ radhome/papers/seecal.html
    [36] Laura Dominik etc. System Mitigation Techniques for Single Event Effects, 27th Digital Avionics Systems Conference, 2008
    [37] Sophie Duzellier etc. Probing With Heavy Ions the SET Sensitivity of Linear Devices. IEEE Trans. Nuclear Science, 2008,55( 6):3321-3327
    [38] I. Thomson, A. Hartshorn, M. Brown, L. Adams, R. Nickson, Dose-Depth and SEU Monitors for the STRV-1 c Satellite, IEEE Trans. Nuclear Science, VOL. 45(6), 2765-2770.
    [39]李孝同,单粒子事件动态监测仪总体设计,航天器工程,1995年,4卷(3期),25-28。
    [40] SEU results from the Advanced Photovoltaic and Electronics Experiments (APEX) satellite, E.G. Mullerr, K.P. Ray, R. Koga, E.G. Holeman ,D.E. Delorey, IEEE Trans. Nuclear Science, VOL 42(6), 1988-1994.
    [41] B. K. Dichter, W. R. Turnbull, D. H. Brautigam, et al., Initial on-orbit results from the compact environmental anomaly sensor (CEASE), IEEE Trans. Nuclear Science, VOL 48(6), 2022-2028.
    [42] E. G. Mullen, K. P. Ray, Microelectronics effects as seen on CRRES, Advance in Space Research, Vol.14(10), 797-807.
    [43] P. J. McNulty, G. E. Farrell, W. P. Tucker, Proton-induced nuclear reaction in silicon, IEEETrans. Nuclear Science, VOL 28(6), 4007-4012.
    [44] J. Barak, Analytical Microdosimetry model for proton–induced SEU in modern devices, IEEE Trans. Nuclear Science, VOL 48(6), 1937-1945.
    [45]蔡明辉,韩建伟,李小银等.临近空间大气中子环境的仿真研究.物理学报,2009,58(9):6659-6664.
    [46] http://pif.web.psi.ch
    [47]贺朝会.单粒子效应研究的现状和动态.中国科技论文在线http://www.paper.edu.cn
    [48]陈盘训.半导体器件和集成电路的辐射效应(第一版),北京国防工业出版社,2005,6:230-239
    [1]黄建国,韩建伟.脉冲激光诱发单粒子效应的机理[J].中国科学(G辑),2004,34(2):121-130
    [2]孙承伟等,激光辐照效应(第一版),北京国防工业出版社,2002.1: 3-18
    [3] Habing D H.The use of lasers to simulate radiation-induced transients in semiconductor devices and circuits[J].IEEE Trans Nucl Sci,1965,12(5):91-100
    [4] E. E. King etc, TRANSIENT RADIATION SCREENING OF SILICON DEVICES USING BACKSIDE LASER IRRADIATION, IEEE Trans. Nucl. Sci. Dec. 1982, vol. NS-29, No.6: 1809-1815
    [5] S.P. Buchner, D. Wilson, K. Kang, D. Gill, J.A. Mazer, W.D. Raburn, A.B. Campbell, and A.R. Knudson, "Laser Simultion of Single Event Upsets," IEEE Trans. Nucl. Sci., NS-34, 1228, Dec.1987
    [6] A. K. Richter and I. Arimura,“Simulation of heavy charged particle tracks using focused laser beams,”IEEE Trans. Nucl. Sci., vol. NS-34, p. 1234, Dec. 1987.
    [7] A.R. Knudson, et al. PULSED LASER-INDUCED CHARGE COLLECTION IN GaAs MESFETS, IEEE Trans Nucl Sci,VOL. 37, NO. 6, DECEMBER 1990:1909-1915
    [8] Melinger J S,Buchner S,McMorrow D,et a1.Critical evaluation of the pulsed laser method for single event efects testing and fundamental studies.IEEE Trans Nucl Sci,1994,41(6) : 2574-2584
    [9] Steven C. MOS etal.Correlation of Picosecond Laser-Induced Latchup and nergeticParticle-Induced Latchup in CMOS Test Structures, IEEE Trans Nucl Sci,VOL.42 NO.6, DECEMBER 1995:1948-1956
    [10] A.I.Chumakov et al. Single Event Latchup Threshold Estimation Based on Laser Dose Rate Test Results, IEEE Trans Nucl Sci,VOL. 44, NO. 6, DECEMBER 1997:2034-2039
    [11] Melinger J S,McMorrow D,Campbell A B,et al.Pulsed laser-induced single event upset and chargecollection measurements as a function of optical penetration depth[J].Journal of Applied Physics,1998,84(2):690-703
    [12] A. M. Chugg, R. Jones, M. Moutrie, C. S. Dyer, C. Sanderson, and A. Wraight, Probing the Charge Collection Sensitivity Profile Using a Picosecond Pulsed Laserat a Range of Wavelengths,IEEE Trans. Nucl. Sci., vol.49, NO.6, Dec 2002: 2969-2976
    [13] Florent Miller, Effects of Beam Spot Size on the Correlation Between Laser and Heavy Ion SEU Testing, IEEE Trans. Nucl. Sci.VOL. 51, NO. 6, DECEMBER 2004:3708-3715
    [14] A. Douin, V. Pouget, F. Darracq, D. Lewis, P. Fouillat, P. Perdu,Influence of Laser Pulse Duration in Single Event Upset Testing, RADECS 2005 Proceedings
    [15] Darracq F, Lapuyade H, Buard N,et al. Backside SEU laser testing for commercial off-the-shelf SRAMs[J].IEEE Trans Nucl Sci,2002,49(6):2977-2985
    [16] D. Lewis et al. Backside Laser testing of ICs for SET sensitivity Evaluation. IEEE Trans. Nucl. Sci. 48 (6) (2001) 2193-2201.
    [17] O. Musseau, V. Ferlet-Cavroiset al. Laser Probing of Bipolar Amplification in 0.25μm MOS/SOI TransistorsVOL. 47, NO. 6, DECEMBER 2000:2196-2203
    [18] Jamie Stuart Laird,A comparison of heavy ion and picosecond laser microbeams for investigating single event transients in InGaAs on InP photodetectors,NIM in Physics Research B 210 (2003) 243–249
    [19] V. Pouget, A. Douin,et al. Dynamic Testing of an SRAM-based FPGA by Time-Resolved Laser Fault Injection,14th IEEE International On-Line Testing Symposium 2008
    [20]V.Ferlet-Cavrois,Large SET Duration Broadening in a Fully-Depleted SOI Technology—Mitigation With Body Contacts. IEEE Trans. Nucl. Sci. VOL. 57, NO. 4, AUGUST 2010:1811-1819
    [21] James R. Schwank,etal.Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements. IEEE Trans. Nucl. Sci. VOL. 57, NO. 4, AUGUST 2010:1827-1834
    [22]王明刚,宋钦岐.脉冲激光器的瞬时辐照效应模拟,微电子学,1988.12.vol(18) , no. 6:110-115
    [23]李华,陈雨生.单粒子翻转脉冲激光模拟的能量阈值的计算.强激光与粒子束.Vol.13(6),2001:436-440
    [24]黄建国,韩建伟.脉冲激光模拟单粒子效应的等效LET计算.中国科学G辑物理学力学天文学2004,34(6):601-609
    [25]韩建伟,张振龙,封国强,马英起.单粒子锁定极端敏感器件的试验及对我国航天安全的警示.航天器环境工程,V25(03), 2008: 263-268
    [26]韩建伟,张振龙,封国强,马英起.利用脉冲激光开展的卫星用器件和电路单粒子效应试验.航天器环境工程,V26(2), 2009:125-130
    [27] Feng Guoqiang,Shangguan Shipeng,Ma Yingqi, Han jianwei.Micro SEL Studies in COTS SRAM Devices by Laser Backside Testing , 11TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS,2010,163-166
    [28]封国强,胡永贵,王健安,黄建国,马英起,韩建伟,张振龙,运算放大器SET效应的试验研究,空间科学学报,30(2),2010:170-175
    [29]薛玉雄,田恺,曹洲,杨生胜,马亚莉,激光模拟单粒子效应设备及试验研究进展综述,航天器环境工程,Vol 27(3).2010:304-312
    [30]田恺等,脉冲激光能量等效重离子LET研究,原子能科学技术,2010, 44(4):489-493
    [31]刘忠立,硅微电子工业的发展状态、限制、对策及辐射加固的考虑,第十届全国抗辐射电子学与电磁脉冲学术年会论文集,2009:1-4
    [32] C. Claeys E. Simoen著刘忠立译,先进半导体材料及器件的辐射效应(第一版),北京国防工业出版社,2008.3: 340-360
    [33] P. W. Marshall etc,“Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates,”IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2669–2674, Dec. 2000.
    [34] R. A. Reed etc,“Heavy-ion broad-beam and microprobe studies of single-event upsets in a 0.20 m SiGe Heterojunction bipolar transistors and circuits,”IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2184–2190, Dec. 2003.
    [35] P. Marshall etc,“A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in a commercially available high-speed SiGe BiCMOS,”IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3457–3463, Dec. 2004.
    [36] D. L. Hansen, P. W. Marshall, R. Lopez-Aguado, K. Jobe, M. A. Carts, C. J. Marshall, P. Chu, and S. F. Meyer,“A study of the SEU performance of InP and SiGe shift registers,”IEEE Trans. Nucl. Sci., vol. 52, no. 4, pp. 1140–1147, Aug. 2005.
    [37] http://www.isde.vanderbilt.edu/muri_2006.htm
    [38] www.aero.org/publications/crosslink/winter2000/03.html
    [1]黄建国,韩建伟.脉冲激光诱发单粒子效应的机理.中国科学G辑物理学力学天文学2004,34(2):121-130
    [2]谢一冈等,粒子探测器与数据获取(第一版),北京科学出版社,2003:6
    [3] http://en.wikipedia.org/wiki/Linear_energy_transfer
    [4] A. H. Johnston, G. M. Swift, T. Miyahira, S. Guertin and L. D. Edmonds, Single-Event Upset Effects in Optocouplers, IEEE Trans Nucl Sci, 1998,45(6): 2867-2876
    [5] http://www.srim.org
    [6] Robert A. Weller,etal.Monte Carlo Simulation of Single Event Effects,IEEE Trans. Nucl. Sci., vol.57, NO. 4, AUGUST 2010:1726:1746
    [7] Johnston A H.Charge generation and collection in p-n junctions excited with pulsed infrared lasers.IEEE Trans Nucl Sci, 1993,4O(6):1 694-1702
    [8] Buchner S,Knudson A,Kang K,et a1.Charge collection from focused picosecond laser pulses.IEEE Trans Nucl Sci,1988,35(6):1517-1522
    [9]石顺祥陈国夫等,非线性光学(第一版),西安西安电子科技大学出版社,2003.3: 241-248
    [10] McMorrow D.,Lotshaw W.T., Melinger J.S., Buchner S., Pease R.,“Sub-bandgap laser induced single event effects: carrier generation via two photon absorption”, IEEE Trans. Nucl. Sci., Vol. 49, p. 3002, 2002.
    [11] A. Yariv, Quantum Electmnics, John Wiley and Sons, New York,1975
    [12] F.Miller, A. Germain,et al. Interest of laser test facility for the assessment of natural radiation environment effects on integrated circuits based systems, presented at the RADECS2003 Conf., Noordwijk, Holland, Sep.2003
    [13] Melinger J S,Buchner S,McMorrow D,et a1.Critical evaluation of the pulsed laser method for single event efects testing and fundamental studies.IEEE Trans Nucl Sci,1994,41(6) : 2574-2584
    [14] Darracq F, Lapuyade H, Buard N,et al. Backside SEU laser testing for commercial off-the-shelf SRAMs[J].IEEE Trans Nucl Sci,2002,49(6):2977-2985
    [15] E. E. King etc, TRANSIENT RADIATION SCREENING OF SILICON DEVICES USING BACKSIDE LASER IRRADIATION, IEEE Trans. Nucl. Sci. Dec. 1982, vol. NS-29, No.6: 1809-1815
    [16]王志功等,集成电路设计技术与工具(第一版),南京,东南大学出版社,2007年7月:39-62
    [17] S. Buchner, D. Wilson, K. Kang, D. Gill, J. A. Mazer, A. Petelin,W. D. Raburn, A. B. Campbell, and A. R. Knudson,“Laser simulation of single event upsets,”IEEE Trans. Nucl. Sci., vol. 34, no. 6, pp.1228–1233, Dec.1987.
    [18] Melinger J S,Buchner S,McMorrow D.Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies[J]. IEEE Trans Nucl Sci,1994,41(6):2574-2584
    [19]徐强,半导体激光器光束传输特性研究,西安电子科技大学博士论文,2007
    [20] Florent Miller, Nadine Buard et al.Effects of Beam Spot Size on the Correlation Between Laser and Heavy Ion SEU Testing.IEEE Trans. Nucl. Sci.,VOL. 51, NO. 6, DECEMBER 2004:3715
    [21] P. Fouillat, V. Pouget, D. McMorrow, and F. Darracq,“Fundamentals of the pulsed laser technique for single event upset testing,”in Proc. SERESSA 2006, Sevilla, Spain, Nov. 27–30, 2006, Centro Nacional de Aceleradores, CNA.
    [22] A. M. Chugg, R. Jones, M. Moutrie, C. S. Dyer, C. Sanderson, and A. Wraight, Probing the Charge Collection Sensitivity Profile Using a Picosecond Pulsed Laserat a Range of Wavelengths, IEEE Trans. Nucl. Sci., vol.49, NO.6, Dec 2002: 2969-2976
    [23] Robert A. Reed, et al. Assessing the Impact of the Space Radiation Environment on Parametric Degradation and Single-Event Transients in Optocouplers,IEEE Trans. Nucl. Sci., vol. 48, NO.6, Dec 2001: 2202-2209
    [24]Page T E, Benedetto J M. Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) evices [J]. Radiation Effects Data Workshop, IEEE, 2005-07
    [25] C. Inguimbert et al.,“Using a carbon beam as a probe to extract the thickness of sensitive volumes,”IEEE Trans. Nucl. Sci., vol. 47, pp. 552–558, June 2000.
    [1] Buchner S, Knudson A, Kang K,et al. Charge collection from focused picosecond laser pulses[J]. IEEE Trans Nucl Sci,1988,35(6):1517-1522
    [2] A. K. Richter and I. Arimura,“Simulation of heavy charged particle tracks using focused laser beams,”IEEE Trans. Nucl. Sci., vol. NS-34, p. 1234, Dec. 1987.
    [3]薛玉雄,田恺,曹洲,杨生胜,马亚莉,激光模拟单粒子效应设备及试验研究进展综述,航天器环境工程, Vol 27(3).2010:304-312
    [4] Peronnard P,Velazco R,Foucard G, et al.Remote SEE testing capabilities with heavy ions and laser beams at CYCLONE-HIF and ATLAS facilities[J].IEEE Trans Nucl Sci,RADECS Workshop,2008
    [5] Alpat B,Batiston R,Bizzarri M,et al.A pulsed nanosecond IR laser diode system to automatically test the single events in the laboratory[J].Nucl Instr and Meth B,2002:485-495
    [6] Jones R,Chugg A M,Jones C M S.Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility[C]//Proc of RADECS99,1999
    [7] R. Jones, A. M. Chugg, C. M. S. Jones, P. H. Duncan, C. S. Dyer, and C. Sanderson,“Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility,”IEEE Trans. Nucl. Sci., vol. 47, pp. 539–544, Jun. 2000.
    [8] V. Pouget, P. Fouillat, D. Lewis, H. Lapuyade, F. Darracq, and A.Touboul,“Laser cross section measurement for the evaluation of single-event effects in integrated circuits,”Microelectronics Reliability,vol. 40, pp. 1371–1375, 2000.
    [9] P. Fouillat, V. Pouget, D. McMorrow, and F. Darracq,“Fundamentals of the pulsed laser technique for single event upset testing,”in Proc. SERESSA 2006, Sevilla, Spain, Nov. 27–30, 2006, Centro Nacional de Aceleradores, CNA.
    [10] M.W. Savage, T. Turflinger, J.W. Howard, S. Buchner,“A Compendium of Single Event Transient Data,”IEEE NSREC 2001 Data Workshop Proceedings, pp. 134-141, 2001.
    [1]施敏,半导体器件物理与工艺(第二版),苏州大学,2002,12:11-14
    [2]史淑廷等,重离子致pn结单粒子瞬态电流脉冲测试系统的研制,中国原子能科学研究院年报,2009:188-189
    [3]封国强等,光电耦合器的单粒子瞬态脉冲效应研究,原子能科学技术,增刊(42),2008:36-42
    [4] Allan H. Johnston etc, Hardness Assurance Methods for Radiation Degradation ofOptocouplers, IEEE Trans Nucl Sci .Vol. 52, NO. 6, Dec, 2005:2649-2655
    [5] A.H. Johnston, G.M. Swift, T. Miyahira, et al. Single event upset effects in optocouplers. IEEE Trans Nucl Sci, 1998, NS-45(6): 2867
    [6] Allan Johnston, Photonic Devices with Complex and Multiple Failure Modes, 2000 IEEE NSREC Short Course in 2000, July 2000, pp. II 1-82.
    [7] S. Larsson ,S. Mattsson. Heavy Ion Effects in Opto-Couplers. EUROPEAN SPACE AGENCY CONTRACT REPORT. D-PL-REP-5166-SE, 2004 (1):17
    [8] K.A. LaBel, et al.Proton-Induced Transients in Optocouplers: In-Flight Anomalies, Ground Irradiation Test, Mitigation and Implications.”IEEE Trans. Nuc. Sci. 44(6), December 1997: 1885-1892.
    [9] K.A. LaBel, S.D. Kniffin, R.A. Reed, et al. A compendium of recent optocoupler radiation test data. IEEE Radiation Effects Data Workshop, July 2000: 123-146
    [10] Stephen Buchner,Single-Event Transients in Bipolar Linear Integrated Circuits,VOL. 53, NO.6, Dec,2006:3079-3102
    [11] M.W. Savage, T. Turflinger, J.W. Howard, S. Buchner,“A Compendium of Single Event Transient Data,”IEEE NSREC 2001 Data Workshop Proceedings, pp. 134-141, 2001.
    [12] D. K. Nichols, J. R. Coss, T. F. Miyahira, and H. R. Schwartz,“Heavy ion and proton induced single event transients in comparators,”IEEE Trans.Nucl.Sci.vol.43, no.6,pp.2960–2967,Dec.1996.
    [13] J.Lehma, C.Yui,etc.Low Dose Failures of Hardened DCDC Power Converters.Radiation Effects Data Workshop,2002 lEEE 15-19 July 2002 Page(s):109-114.
    [14]贺兴华等,PWM型电压调节器单粒子效应及加固技术研究,宇航学报,V(90)11,2010:2571-2577
    [15] P.C.Adell etc, Total-Dose and Single-Event Effects in DC/DC Converter Control Circuitry, IEEE Trans Nucl Sci .VOL. 50, NO. 6, Dec 2003:1867-1872
    [16] Boulghassoul Y, et al. Effect of Technology Scaling on the SET Sensitivity of RF CMOS Voltage-controlled Oscillators.IEEE Trans Nucl Sci .Vol.2005,52(6):2426-2432
    [17] Sexton, F.W.; Destructive single-event effects in semiconductor devices and ICs, Nuclear Science, IEEE Transactions on, Volume 50, Issue 3, Part 3, June 2003 Page(s):603 :621.
    [18] Titus etc. Prediction of early lethal SEGR failures of VDMOSFETs for commercial space systems,”IEEE Trans Nucl Sci .Volume 46, Issue 6, Dec. 1999 Page(s):1640 :1651.
    [19] Roubaud. F etc. Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs, IEEE Trans Nucl Sci. Volume 40, Issue 6, Part 1-2, Dec1993:1952-1958.
    [20] F. Miller, A. Luu,et al.Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing,IEEE Trans Nucl Sci,53, NO. 6, DECEMBER 2006:3145-3152
    [21] Darracq F, Lapuyade H, Buard N,et al. Backside SEU laser testing for commercial off-the-shelf SRAMs[J].IEEE Trans Nucl Sci,2002,49(6):2977-2985
    [1]钟文耀等,CMOS电路模拟与设计-基于Hspice,第一版,北京东黄城根北街16号:科学出版社,2007年7月
    [2] Ronald L. Pease, et al.,“Critical Charge for Single‐Event Transients (SETs) in Bipolar Linear Circuits”, IEEE Trans. Nucl. Sci. Dec.2001 Vol 48(6):1966-1972.
    [3] Y. Boulghassoul, L. W. Massengill, A. L. Sternberg, R. L. Pease, S.Buchner et al,“Circuit modeling of the LM124 operational amplifier for analog single-event transient analysis,”IEEE Trans. Nucl. Sci., vol. 49, no.6,pp.3090–3096, Dec.2002.
    [4] P. Adell, R. D. Schrimpf, H. J. Barnaby, R.Marec, C. Chatry, P. Calvel, C. Barillot, and O.Mion,“Analysis of single event transients in analog circuits,”IEEE Trans. Nucl. Sci., vol. 47,no. 6, pp. 2616–2623, Dec.2000.
    [5]赵雯,郭红霞,罗尹虹,丁李利,张科营.基于二维查找表的SET耦合注入方法.原子能科学技术.Vol44增刊,2010:522-528
    [1] Stephen Buchner,Single-Event Transients in Bipolar Linear Integrated Circuits,VOL. 53, NO.6, Dec,2006:3079-3102
    [2] N. W. van Vonno and B. R. Doyle,“Design considerations and verification testing of an SEE- hardened quad comparator,”IEEE Trans. Nucl.Sci., vol. 48, no. 6, pp. 1859–1863, Dec. 2001.
    [1] Ma Yingqi, Feng Guoqiang, Han Jianwei, Pulsed laser Evaluation of Single Event Transients in Optocouplers, IEEE TENCON2009
    [2] A.H. Johnston, G.M. Swift, T. Miyahira, et al. Single event upset effects in optocouplers. IEEE Trans Nucl Sci, NS-45(6): 2867, 1998.

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