D-A型电双稳态高分子功能材料的设计及其非易失性存储效应
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摘要
聚合物的电子性质可以通过分子设计和合成等手段调控或剪裁。与硅存储器相比,基于高分子存储材料制作的存储器具有材料结构多样化、成本低、易加工、柔韧性好、可大面积制作(可通过旋涂或喷墨打印,在塑料、玻璃、CMOS混合集成电路上面进行加工)、响应快、功耗低、高密度存储等优点,在信息存储以及高速计算领域有着非常广泛的应用前景。另一方面,石墨烯存储材料可以实现微型化电路、机械柔韧性、三维堆叠的高密度存储能力、快的响应速度和高的开关比,并且具备碳材料的本征特性,相比于当前的硅基存储材料有更多的优势,有望成为下一代硅基材料的补充者甚至替代者。本文将氧化石墨烯(GO),还原的氧化石墨烯(RGO)和金属纳米粒子引入到高分子体系中,设计和制备了一系列具有推-拉电子结构特征的电子给体-受体型(D-A型)高分子信息存储材料,研究了材料的基本结构、非易失性存储性能和存储机制,获得了一些原创性研究成果。论文分为7章：
第一章：综述了高分子阻变存储器的基本概念和工作机制及高分子阻变材料的研究进展和存在的丞待解决的问题。在这些文献的基础上提出了本论文的研究课题和主要研究内容。
第二章：分别通过‘"grafting to"和‘"grafting from"方法制备了聚乙烯基咔唑(PVK)共价修饰的GO功能材料GO-PVK在第一种方法中,我们将链末端带有羧基的聚乙烯基咔唑通过缩合反应接枝到了甲苯-2,4-二异氰酸酯(TD1)修饰的GO衍生物上。第二种方法是利用可逆加成-裂解链转移(RAFT)自由基聚合这种新的"grafting from"方法,从GO表面直接生长出了PVK。探讨了两种不同的制备方法对存储器件“Al/GO-PVK/ITO性能的影响。
第三章：合成了两种共轭高分子共价修饰的GO功能材料GO-PFCz和GO-PANI,研究了材料的基本结构、表面形貌以及材料的电开关和信息存储效应。在基于GO-PFCz的存储器件中,电子给体PFCz和电子受体GO之间的电场诱导电荷转移形成了材料的电荷转移传导态,导致了从OFF念(低导电状态)到ON态(高导电状态)的跃迁。施加反向电压能够有效分离电荷转移态使器件重新回到起始的OFF态。施加不同电压扫描下测得的GO-PFCz薄膜的原位荧光光谱表现出荧光淬灭和复原,验证了电场诱导电荷转移过程。使用红外光谱,拉曼光谱和X-射线光电子能谱表征了聚苯胺原位接枝的GO功能材料(GO-PANI)的结构。细长的纺锤型PANI:纳米纤维包裹着石墨烯纳米片。Al/GO-PANI/ITO器件表现出电双稳态开关和非易失性可擦写存储效应ON/OFF电流开关比超过了104。
第四章：利用RGO、肌胺酸和含有醛基的π-共轭高分子之间的1,3偶极环加成反应,制备了两种高度可溶的基于RGO的高分子功能材料RGO-PFTPA和RGO-PFCF。基于这两种材料的器件均表现出非易失性可擦写存储效应。两种器件的开启阈值电压比较接近,而基于RGO-PFC的器件的关闭阈值电压则明显增大、电流开关比也增加了一个数量级存储性能的差异可能是由于在RGO-PFCF的主链上含有给电子能力更强的咔唑单元,进一步强化了RGO和高分子给体之间的电荷转移相互作用,从而更有利于实现器件从OFF态到ON态的转换。
第五章：合成了两个新颖的给体-陷阱-受体(D-T-A)结构的聚乙烯基咔唑衍生物,PVK-AZO-2CN和PVK-AZO-NO2。使用这两个高分子制备成的A1/高分子/ITO的三明治结构的器件表现出电双稳态特性和WORM型存储效应,开启电压低于-1.9V,电流开关比超过了105。电双稳态特性是由于场诱导的咔唑基团和受体分子之间的电荷转移以及偶氮苯的电荷捕获作用产生的。利用分子模拟计算、原位UV-Vis光谱、XPS、原位高分辨TEM图验证了可能的存储机理。并进一步通过与不含偶氮苯的参照物PVK-CN和PVK-NO2作对比,证实偶氮苯基团对所合成的PVK-AZO高分子的存储性能起到关键作用。
第六章：结合使用溶胶-凝胶反应,蒸馏-沉淀聚合和氧化接枝聚合等材料制备技术,制备了Au@SiO2@PTEMA-g-P3HT核双层壳式纳米球。使用HF侵蚀除去二氧化硅无机内壳,得到了一种内含可移动的金纳米核的电活性高分子外壳封装的“铃铛”型纳米球Au@air@PTEMA-g-P3HT。这种纳米球拥有独特的结构和良好的单分散性,能规整地嵌入聚苯乙烯薄膜中。通过调变活性聚合物薄膜中“铃铛”型纳米球的含量(5,10,25和50wt%),探讨了器件Al/Au@air@PTEMA-g-P3HT+PS/ITO的存储性能。器件的存储机制归属为充当电子给体的PTEMA-g-P3HT外壳和充当电子受体的金纳米核之间的场诱导电荷转移。
第七章：总结了博士生阶段获得的主要研究结果,并对课题涉及的技术领域在未来的发展前景予以展望和期盼。
The molecular structure of polymers can be tailored by functionalizing them with electron donors and acceptors of different strengths, spacer moieties of different steric effects for the electroactive pendant groups, or nanostructured electroactive materials, to induce different memory behaviors in simple metal/polymer/metal devices. In comparison to inorganic materials-based memory devices, polymer memories are proposed to revolutionize electrical applications by providing extremely inexpensive, lightweight, and transparent modules that can be fabricated onto plastic, glass, or the top layer of CMOS hybrid integration circuits. On the other hand, with all the advantages including ultraminiature circuitry, mechanical flexibility, high data storage capacity through three-dimensional stacking, high operating speed and ON/OFF ratio, low power consumption, and the non-exotic nature of carbon raw material, over the current state-of-the-art memories and other upcoming technologies, graphene and its derivatives promise themselves great potential as an alternative, or at least a supplement, to silicon for the next generation information storage applications. In this thesis, by introducing graphene oxide (GO). reduced graphene oxide (RGO) and metal nanoparticles into the polymer systems. we designed and synthesized a series of donor-acceptor type polymer memory materials, and investigated their basic structures, nonvolatile memory performance and memory mechanisms as well. This Ph.D. thesis was divided into seven chapters, as follows:
In chapter one, the basic concept and the memory mechanism of resistive polymer memory, as well as the progress of resistive polymer memory materials and the problems urgently to be solved were reviewed. On the basis of these reported literatures, the research topic and the main contents of the thesis were put forward.
In chapter two. poly(N-vinylcarbazole)(PVK) covalently functionalized GO (GO-PVK) has been synthesized via "grafting to" and "grafting from" methods, respectively. In the first, GO-PVK was synthesized by reaction of carboxyl terminated PVK with GO-toluene-2.4-diisocynate (GO-TDI). The second approach is to grow PVK chains directly from the surface of GO by using reversible addition fragmentation chain transfer (RAFT) polymerization. The memory performance of the materials were discussed in the AI/GO-PVK/ITO structure.
In chapter three, two conjugated polymers covalently functionalized GO materials:GO-PFCz and GO-PANI were synthesized, respectively. The basic structures, surface morphology, and memory effects of the materials were characterized. In the GO-PFCz based memory device, electrical field-induced charge-transfer (CT) from the polymer donor to the GO acceptor gives rise to a conductive CT state, resulting in the electrical transition from the initial OFF state to the ON state. However, a reverse bias can dissociate the CT state and reset the device back to the initial OFF state. The electrical field-induced CT process is supported by fluorescence quenching and recovery in the in-situ fluorescence spectra of the GO-PFCz film under electrical biases. The successful in-situ synthesis of the GO-PANI composites was confirmed by IR spectra, Raman spectra, XPS analysis and TEM. After growing PANI from the surface of GO, spindle-shaped PANI nanofibers with large length-to-diameter ratios appear to surround the GO nanosheets. The Al/GO-PANI/ITO device was fabricated and exhibited typical bistable electrical switching and nonvolatile rewritable memory effect, with an ON/OFF current ratio in excess of104.
In chapter four, two solution-processable RGO-based functional polymer materials (RGO-PFTPA and RGO-PFCF) were synthesized by the1,3-dipolar cycloaddition between^-conjugated polymers with aldehyde groups, N-methylglycine and RGO. Bistable electrical switching and nonvolatile rewritable memory effects were demonstrated in a sandwich structure of Al/RGO-polymer/ITO. The switch-on threshold voltages of the two devices are comparable, while the switch-off threshold voltage and ON/OFF current ratio of the RGO-PFCF device are slightly larger than those of the RGO-PFTPA device. Incorporation of carbazole groups into the RGO-PFCF molecule were believed to account for the differences of electronic performance, the carbazole groups have strong electron-donating ability, further enhanced the charge transfer effects between RGO and electron-donating polymer, thus facilitated the electrical transition from the OFF state to the ON state.
In chapter five, two poly(N-vinylcarbazole) derivatives with pendant donor-trap-acceptor (D-T-A) structures, PVK-AZO-2CN and PVK-AZO-NO2. were synthesized. The Al/polymer/ITO devices exhibit write-once read-many-times (WORM) memory effects with a switching threshold voltage of less than-1.9V and an ON/OFF current ratio of more than105. The electrical bistability and memory effects in the present devices are attributed to the electric-field-induced charge transfer between the carbazole electron donor and the terminal nitro or cyano electron acceptor entities, and subsequent charge trapping at the intermediate azobenzene chromophores. The proposed switching and conduction mechanism is supported by the molecular computation results. UV-vis spectra, XPS. and TEM images of the polymer thin films. The influence of the charge trapping effect of the azobenzene mediator is further explored by studying the electrical and electronic properties of the other two PVK derivatives in which the nitro or cyano acceptors are directly bonded to the carbazole donor moieties as control samples
In chapter six. monodisperd hairy Au@air@PTEMA-g-P3HT hybrid nanorattles. with a movable Au nanocore in the cavity and electroactive P3HT polymer brushes on the exterior surface, have been synthesized by selective etching of the silica inner shell of the hairy Au@SiO2@PTEMA-g-P3HT core-double shell nanospheres, prepared from combined sol-gel reaction, distillation-precipitation polymerization and oxidative graft polymerization. The Au@air@PTEMA-g-P3HT hybrid nanorattles can be readily dispersed in toluene and uniformly integrated into polystyrene (PS) thin films. The memory performance of the Al/Au@air@PTEMA-g-P3HT+PS/ITO devices can be tuned by varying the Au@air@PTEMA-g-P3HT content (5,10,25and50wt%) in the active polymer layer. The switching mechanism in the present device can be ascribed to the field-induced charge transfer between the electron-donating PTEMA-g-P3HT shells and the electron-accepting Au nanocores.
In chapter seven, conclusions and prospective were given.
第一章：综述了高分子阻变存储器的基本概念和工作机制及高分子阻变材料的研究进展和存在的丞待解决的问题。在这些文献的基础上提出了本论文的研究课题和主要研究内容。
第二章：分别通过‘"grafting to"和‘"grafting from"方法制备了聚乙烯基咔唑(PVK)共价修饰的GO功能材料GO-PVK在第一种方法中,我们将链末端带有羧基的聚乙烯基咔唑通过缩合反应接枝到了甲苯-2,4-二异氰酸酯(TD1)修饰的GO衍生物上。第二种方法是利用可逆加成-裂解链转移(RAFT)自由基聚合这种新的"grafting from"方法,从GO表面直接生长出了PVK。探讨了两种不同的制备方法对存储器件“Al/GO-PVK/ITO性能的影响。
第三章：合成了两种共轭高分子共价修饰的GO功能材料GO-PFCz和GO-PANI,研究了材料的基本结构、表面形貌以及材料的电开关和信息存储效应。在基于GO-PFCz的存储器件中,电子给体PFCz和电子受体GO之间的电场诱导电荷转移形成了材料的电荷转移传导态,导致了从OFF念(低导电状态)到ON态(高导电状态)的跃迁。施加反向电压能够有效分离电荷转移态使器件重新回到起始的OFF态。施加不同电压扫描下测得的GO-PFCz薄膜的原位荧光光谱表现出荧光淬灭和复原,验证了电场诱导电荷转移过程。使用红外光谱,拉曼光谱和X-射线光电子能谱表征了聚苯胺原位接枝的GO功能材料(GO-PANI)的结构。细长的纺锤型PANI:纳米纤维包裹着石墨烯纳米片。Al/GO-PANI/ITO器件表现出电双稳态开关和非易失性可擦写存储效应ON/OFF电流开关比超过了104。
第四章：利用RGO、肌胺酸和含有醛基的π-共轭高分子之间的1,3偶极环加成反应,制备了两种高度可溶的基于RGO的高分子功能材料RGO-PFTPA和RGO-PFCF。基于这两种材料的器件均表现出非易失性可擦写存储效应。两种器件的开启阈值电压比较接近,而基于RGO-PFC的器件的关闭阈值电压则明显增大、电流开关比也增加了一个数量级存储性能的差异可能是由于在RGO-PFCF的主链上含有给电子能力更强的咔唑单元,进一步强化了RGO和高分子给体之间的电荷转移相互作用,从而更有利于实现器件从OFF态到ON态的转换。
第五章：合成了两个新颖的给体-陷阱-受体(D-T-A)结构的聚乙烯基咔唑衍生物,PVK-AZO-2CN和PVK-AZO-NO2。使用这两个高分子制备成的A1/高分子/ITO的三明治结构的器件表现出电双稳态特性和WORM型存储效应,开启电压低于-1.9V,电流开关比超过了105。电双稳态特性是由于场诱导的咔唑基团和受体分子之间的电荷转移以及偶氮苯的电荷捕获作用产生的。利用分子模拟计算、原位UV-Vis光谱、XPS、原位高分辨TEM图验证了可能的存储机理。并进一步通过与不含偶氮苯的参照物PVK-CN和PVK-NO2作对比,证实偶氮苯基团对所合成的PVK-AZO高分子的存储性能起到关键作用。
第六章：结合使用溶胶-凝胶反应,蒸馏-沉淀聚合和氧化接枝聚合等材料制备技术,制备了Au@SiO2@PTEMA-g-P3HT核双层壳式纳米球。使用HF侵蚀除去二氧化硅无机内壳,得到了一种内含可移动的金纳米核的电活性高分子外壳封装的“铃铛”型纳米球Au@air@PTEMA-g-P3HT。这种纳米球拥有独特的结构和良好的单分散性,能规整地嵌入聚苯乙烯薄膜中。通过调变活性聚合物薄膜中“铃铛”型纳米球的含量(5,10,25和50wt%),探讨了器件Al/Au@air@PTEMA-g-P3HT+PS/ITO的存储性能。器件的存储机制归属为充当电子给体的PTEMA-g-P3HT外壳和充当电子受体的金纳米核之间的场诱导电荷转移。
第七章：总结了博士生阶段获得的主要研究结果,并对课题涉及的技术领域在未来的发展前景予以展望和期盼。
The molecular structure of polymers can be tailored by functionalizing them with electron donors and acceptors of different strengths, spacer moieties of different steric effects for the electroactive pendant groups, or nanostructured electroactive materials, to induce different memory behaviors in simple metal/polymer/metal devices. In comparison to inorganic materials-based memory devices, polymer memories are proposed to revolutionize electrical applications by providing extremely inexpensive, lightweight, and transparent modules that can be fabricated onto plastic, glass, or the top layer of CMOS hybrid integration circuits. On the other hand, with all the advantages including ultraminiature circuitry, mechanical flexibility, high data storage capacity through three-dimensional stacking, high operating speed and ON/OFF ratio, low power consumption, and the non-exotic nature of carbon raw material, over the current state-of-the-art memories and other upcoming technologies, graphene and its derivatives promise themselves great potential as an alternative, or at least a supplement, to silicon for the next generation information storage applications. In this thesis, by introducing graphene oxide (GO). reduced graphene oxide (RGO) and metal nanoparticles into the polymer systems. we designed and synthesized a series of donor-acceptor type polymer memory materials, and investigated their basic structures, nonvolatile memory performance and memory mechanisms as well. This Ph.D. thesis was divided into seven chapters, as follows:
In chapter one, the basic concept and the memory mechanism of resistive polymer memory, as well as the progress of resistive polymer memory materials and the problems urgently to be solved were reviewed. On the basis of these reported literatures, the research topic and the main contents of the thesis were put forward.
In chapter two. poly(N-vinylcarbazole)(PVK) covalently functionalized GO (GO-PVK) has been synthesized via "grafting to" and "grafting from" methods, respectively. In the first, GO-PVK was synthesized by reaction of carboxyl terminated PVK with GO-toluene-2.4-diisocynate (GO-TDI). The second approach is to grow PVK chains directly from the surface of GO by using reversible addition fragmentation chain transfer (RAFT) polymerization. The memory performance of the materials were discussed in the AI/GO-PVK/ITO structure.
In chapter three, two conjugated polymers covalently functionalized GO materials:GO-PFCz and GO-PANI were synthesized, respectively. The basic structures, surface morphology, and memory effects of the materials were characterized. In the GO-PFCz based memory device, electrical field-induced charge-transfer (CT) from the polymer donor to the GO acceptor gives rise to a conductive CT state, resulting in the electrical transition from the initial OFF state to the ON state. However, a reverse bias can dissociate the CT state and reset the device back to the initial OFF state. The electrical field-induced CT process is supported by fluorescence quenching and recovery in the in-situ fluorescence spectra of the GO-PFCz film under electrical biases. The successful in-situ synthesis of the GO-PANI composites was confirmed by IR spectra, Raman spectra, XPS analysis and TEM. After growing PANI from the surface of GO, spindle-shaped PANI nanofibers with large length-to-diameter ratios appear to surround the GO nanosheets. The Al/GO-PANI/ITO device was fabricated and exhibited typical bistable electrical switching and nonvolatile rewritable memory effect, with an ON/OFF current ratio in excess of104.
In chapter four, two solution-processable RGO-based functional polymer materials (RGO-PFTPA and RGO-PFCF) were synthesized by the1,3-dipolar cycloaddition between^-conjugated polymers with aldehyde groups, N-methylglycine and RGO. Bistable electrical switching and nonvolatile rewritable memory effects were demonstrated in a sandwich structure of Al/RGO-polymer/ITO. The switch-on threshold voltages of the two devices are comparable, while the switch-off threshold voltage and ON/OFF current ratio of the RGO-PFCF device are slightly larger than those of the RGO-PFTPA device. Incorporation of carbazole groups into the RGO-PFCF molecule were believed to account for the differences of electronic performance, the carbazole groups have strong electron-donating ability, further enhanced the charge transfer effects between RGO and electron-donating polymer, thus facilitated the electrical transition from the OFF state to the ON state.
In chapter five, two poly(N-vinylcarbazole) derivatives with pendant donor-trap-acceptor (D-T-A) structures, PVK-AZO-2CN and PVK-AZO-NO2. were synthesized. The Al/polymer/ITO devices exhibit write-once read-many-times (WORM) memory effects with a switching threshold voltage of less than-1.9V and an ON/OFF current ratio of more than105. The electrical bistability and memory effects in the present devices are attributed to the electric-field-induced charge transfer between the carbazole electron donor and the terminal nitro or cyano electron acceptor entities, and subsequent charge trapping at the intermediate azobenzene chromophores. The proposed switching and conduction mechanism is supported by the molecular computation results. UV-vis spectra, XPS. and TEM images of the polymer thin films. The influence of the charge trapping effect of the azobenzene mediator is further explored by studying the electrical and electronic properties of the other two PVK derivatives in which the nitro or cyano acceptors are directly bonded to the carbazole donor moieties as control samples
In chapter six. monodisperd hairy Au@air@PTEMA-g-P3HT hybrid nanorattles. with a movable Au nanocore in the cavity and electroactive P3HT polymer brushes on the exterior surface, have been synthesized by selective etching of the silica inner shell of the hairy Au@SiO2@PTEMA-g-P3HT core-double shell nanospheres, prepared from combined sol-gel reaction, distillation-precipitation polymerization and oxidative graft polymerization. The Au@air@PTEMA-g-P3HT hybrid nanorattles can be readily dispersed in toluene and uniformly integrated into polystyrene (PS) thin films. The memory performance of the Al/Au@air@PTEMA-g-P3HT+PS/ITO devices can be tuned by varying the Au@air@PTEMA-g-P3HT content (5,10,25and50wt%) in the active polymer layer. The switching mechanism in the present device can be ascribed to the field-induced charge transfer between the electron-donating PTEMA-g-P3HT shells and the electron-accepting Au nanocores.
In chapter seven, conclusions and prospective were given.
引文
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