基片集成波导传播特性及滤波器的理论与实验研究
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摘要
为适应电子与通信技术飞速发展的局面,微波毫米波集成电路及系统正在向高性能、低成本、高集成度和小型化方面快速发展。但是,将微波毫米波系统单片化技术的一个突出的困难是系统中需要的高品质因数的无源元件,如滤波器、谐振器和双工器等元件在半导体芯片内难以实现。新兴的基片集成波导(SIW:Substrate Integrated Waveguide)技术具有高品质因数、大功率容量、易于加工、造价低和容易集成等优点,从而使微波毫米波系统的封装级单片化成为可能。基片集成波导技术目前处于刚刚兴起的阶段,因此有许多理论问题需要研究,有很多应用领域亟待开拓。本文重点研究了基片集成波导结构的传播特性并设计和实现了多种新型高性能的基片集成波导滤波器。
首次利用频域有限差分法结合Floquet定理并采用理想匹配层(PML)作为吸收边界条件对基片集成波导的传播特性进行了研究,得到了基片集成波导传播问题的复数本征解,在毫米波频段的实验测试结果和数值计算结果的良好吻合验证了方法的正确性和有效性。
应用频域有限差分法结合理想匹配层对二维开放型基片集成波导结构形成的谐振腔的本征值问题进行了分析,从理论上证明了基片集成波导谐振腔的能量泄漏远小于介质损耗,可以获得很高的品质因数。
设计和实现了多种基片集成波导滤波器:共面波导耦合级联基片集成波导腔体滤波器、直接耦合级联基片集成波导腔体滤波器、底面耦合层叠式基片集成波导腔体滤波器、周期性十字形破损性地结构-基片集成波导腔体滤波器、微带损性地结构-基片集成波导腔体级联滤波器和低阻-高阻短微带线基片集成腔体滤波器等。这些滤波器在低损耗微波介质基片上用印刷电路板的工艺实现,并给出了仿真结果和测试结果。它们具有良好的滤波特性,并具有高品质因数、大功率容量、易于加工、成本低和容易集成等优点,其中六种滤波器已提交了发明专利申请。
用基片集成波导设计和实现了H面环形电桥,具有体积小、重量轻、高品质因数、低损耗、低成本、易于集成的优点,可以简单方便的与SIW天线等SIW器件连接,不会因为不连续性与转接而产生辐射、电磁干扰和明显降低系统的性能。
Recent advances in electronic and communication technology further the need for small, high performance and low cost microwave and millimeter wave systems. Due to the difficulty of realizing passive components with high quality factor (Q) in semiconductive materials, now it is impossible to integrate a microwave or millimeter wave system on chip (SOC). Recently, a new technology called substrate integrated waveguide (SIW) has been proposed and developed as an attractive for low-cost, high-Q, relatively high-power capacity, and high-density integration of microwave and millimeter wave components and sub-systems. Because the SIW is a newly arisen technique, many theoretical problems still remain unclear and its applications are still far from being completed.
In this dissertation, essential propagation characteristics and applications in filters of SIW are investigated.
A novel finite difference frequency domain (FDFD) algorithm with perfectly matched layer (PML) and Floquet's theorem for the analysis of SIW guided-wave problems is presented. In this scheme, the problem is converted into a generalized matrix eigenvalue problem and finally transformed to a standard matrix eigenvalue problem that can be solved with efficient subroutines available. This approach has been verified with experiment.
FDFD method is applied to analyze the eigenvalue problems of SIW cavity. It is proved theoretically that the energy leakage from the via gaps can be neglected contrasting to the heat dissipation and a SIW cavity with high-Q can be obtained easily.
And several kinds of SIW filters are designed and fabricated on standard printed circuit boards (PCB): the coplanar waveguide (CPW) coupled SIW-cavity filters, the direct coupled SIW-cavity filters, the folded SIW-cavity filters, the SIW microwave filters with the periodic cross-slot defected ground structures (DGS), the SIW microwave filters with the square-slot microstrip DGS, and the SIW microwave filters with high-impedance short-line element. The simulated and measured results are presented to demonstrate the promising performances of the proposed filters.
首次利用频域有限差分法结合Floquet定理并采用理想匹配层(PML)作为吸收边界条件对基片集成波导的传播特性进行了研究,得到了基片集成波导传播问题的复数本征解,在毫米波频段的实验测试结果和数值计算结果的良好吻合验证了方法的正确性和有效性。
应用频域有限差分法结合理想匹配层对二维开放型基片集成波导结构形成的谐振腔的本征值问题进行了分析,从理论上证明了基片集成波导谐振腔的能量泄漏远小于介质损耗,可以获得很高的品质因数。
设计和实现了多种基片集成波导滤波器:共面波导耦合级联基片集成波导腔体滤波器、直接耦合级联基片集成波导腔体滤波器、底面耦合层叠式基片集成波导腔体滤波器、周期性十字形破损性地结构-基片集成波导腔体滤波器、微带损性地结构-基片集成波导腔体级联滤波器和低阻-高阻短微带线基片集成腔体滤波器等。这些滤波器在低损耗微波介质基片上用印刷电路板的工艺实现,并给出了仿真结果和测试结果。它们具有良好的滤波特性,并具有高品质因数、大功率容量、易于加工、成本低和容易集成等优点,其中六种滤波器已提交了发明专利申请。
用基片集成波导设计和实现了H面环形电桥,具有体积小、重量轻、高品质因数、低损耗、低成本、易于集成的优点,可以简单方便的与SIW天线等SIW器件连接,不会因为不连续性与转接而产生辐射、电磁干扰和明显降低系统的性能。
Recent advances in electronic and communication technology further the need for small, high performance and low cost microwave and millimeter wave systems. Due to the difficulty of realizing passive components with high quality factor (Q) in semiconductive materials, now it is impossible to integrate a microwave or millimeter wave system on chip (SOC). Recently, a new technology called substrate integrated waveguide (SIW) has been proposed and developed as an attractive for low-cost, high-Q, relatively high-power capacity, and high-density integration of microwave and millimeter wave components and sub-systems. Because the SIW is a newly arisen technique, many theoretical problems still remain unclear and its applications are still far from being completed.
In this dissertation, essential propagation characteristics and applications in filters of SIW are investigated.
A novel finite difference frequency domain (FDFD) algorithm with perfectly matched layer (PML) and Floquet's theorem for the analysis of SIW guided-wave problems is presented. In this scheme, the problem is converted into a generalized matrix eigenvalue problem and finally transformed to a standard matrix eigenvalue problem that can be solved with efficient subroutines available. This approach has been verified with experiment.
FDFD method is applied to analyze the eigenvalue problems of SIW cavity. It is proved theoretically that the energy leakage from the via gaps can be neglected contrasting to the heat dissipation and a SIW cavity with high-Q can be obtained easily.
And several kinds of SIW filters are designed and fabricated on standard printed circuit boards (PCB): the coplanar waveguide (CPW) coupled SIW-cavity filters, the direct coupled SIW-cavity filters, the folded SIW-cavity filters, the SIW microwave filters with the periodic cross-slot defected ground structures (DGS), the SIW microwave filters with the square-slot microstrip DGS, and the SIW microwave filters with high-impedance short-line element. The simulated and measured results are presented to demonstrate the promising performances of the proposed filters.
引文
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