三明治结构Si/LSMO/PAN(DBSA掺杂)/Co/Al有机自旋阀制备及研究
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摘要
随着科技的日新月异,电子有机自旋阀的广泛应用,我们迎来了信息时代。电子自旋是电子一个典型的量子属性,巨磁阻效应的发现引发了磁存储和磁记录领域的革命,是自旋电子学的物理基础之一。GMR硬盘读出磁头,GMR磁随机存贮器MRAM,GMR磁传感器的应用昭示着磁电阻效应的应用实现商业化,工业化,并为自旋电子学提供了丰富的研究材料。
有机半导体自旋-轨道相互作用和超精细相互作用弱、自旋扩散长度长等优点,是无机半导体材料无法相比的,所以有机半导体成为有机自旋阀理想的中间层材料;与无机有机自旋阀相比,有机有机自旋阀有着更为优良的性能良好的机械性能,工艺简单,制备方便等优势。2004年第一个有机自旋阀的报道引起了全世界的关注,研究有机自旋阀中电子的自旋注入和输运,对自旋电子学研究具有重要意义。
作者以镧锶锰氧(La_(0.67)Sr_(0.33)MnO_3)为底电极,掺杂态的聚苯胺(PAn)为有机中间层,钴(Co)为顶电极,制备了“La_(0.67)Sr_(0.33)MnO_3/PAn/Co”三明治结构的有机自旋阀。对铁磁层材料La_(0.67)Sr_(0.33)MnO_3,有机中间层材料掺杂态的聚苯胺(PAn),自旋阀有机自旋阀“La_(0.67)Sr_(0.33)MnO_3/PAn/Co”分别作了研究,并在低温80K下观察到了自旋阀有机自旋阀约为1%的磁电阻效应。
本文共分为4章,主要内容如下:
第一章:简单介绍自旋阀研究概况,铁磁层材料的选择,有机中间层材料的选择及主要测试手段的概述,给出本文研究目的。
第二章:本章介绍了底电极材料La_(0.67)Sr_(0.33)MnO_3和中间层材料掺杂态PAn的制备工艺,并对磁学性质,电学性质,化学性质等做了系列研究。
第三章:本章介绍了有机自旋阀有机自旋阀的制备工艺,磁学性质,电学性质的研究并对1%的磁电阻效应给出了理论解释。
第四章:全文总结与展望
With the rapid development of technology and the widespread application of electronic devices, we entered in the information age. Electron spin is a typical quantum electronic properties. The discovery of giant magnetoresistance effect led to the field of magnetic storage and magnetic recording revolution and is one of the physical basis of spintronics. GMR hard disk read heads, GMR magnetic random memory (MRAM), GMR magnetic sensors application show the application of magnetoresistance commercialization, industrialization, as well as spin-electronics has provided a wealth of research material.
Organic semiconductor have the weak spin - orbit interaction and hyperfine interaction and long spin diffusion length, but inorganic semiconductor materials have not, so the organic semiconductor can be as a spin-valve ideal organic intermediate layer material; organic devices have more excellent performance of the mechanical properties of a good, simple process, preparation than inorganic components, and so on. In 2004 year an organic spin valve was reported and was concerned around the world, the research of lectronic spin injection and transport in organic spin-valve e, is of great significance to the spintronics research.
The author choosed La_(0.67)Sr_(0.33)MnO_3 as the bottom electrode, polyaniline doped state (PAn) as the organic intermediate layer, cobalt (Co) as the top electrode and fabricated "La_(0.67)Sr_(0.33)MnO_3/PAn / Co "sandwich structure of the organic spin valve. The author studied Magnetic material of ferromagnetism La_(0.67)Sr_(0.33)MnO_3, the middle layer of organic material doped states of polyaniline (PAn), spin-valve device "La_(0.67)Sr_(0.33)MnO_3/PAn/Co". At low temperatures under 80K we Observed the magnetoresistance effect of the spin-valve device is about 1% .
This article is divided into 4 chapters, are as follows:
Chapter I: a brief overview of the research of spin-valve, the basis for selection of iron magnetic material, the middle layer organic material. an brief summary of the main testing tools and the purpose of this paper.
Chapter II: This chapter describes the preparation and the properties of the bottom electrode material La_(0.67)Sr_(0.33)MnO_3 and middle layer materials doped state PAn, include magnetic properties, electrical properties, chemical properties, and so on.
Chapter III: This chapter describes the preparation and the properties of the organic spin-valve device, magnetic properties, electrical properties.The author give a theoretical explanation about the one percent magnetoresistance effect.
Chapter IV: The full text of Summary and Outlook
有机半导体自旋-轨道相互作用和超精细相互作用弱、自旋扩散长度长等优点,是无机半导体材料无法相比的,所以有机半导体成为有机自旋阀理想的中间层材料;与无机有机自旋阀相比,有机有机自旋阀有着更为优良的性能良好的机械性能,工艺简单,制备方便等优势。2004年第一个有机自旋阀的报道引起了全世界的关注,研究有机自旋阀中电子的自旋注入和输运,对自旋电子学研究具有重要意义。
作者以镧锶锰氧(La_(0.67)Sr_(0.33)MnO_3)为底电极,掺杂态的聚苯胺(PAn)为有机中间层,钴(Co)为顶电极,制备了“La_(0.67)Sr_(0.33)MnO_3/PAn/Co”三明治结构的有机自旋阀。对铁磁层材料La_(0.67)Sr_(0.33)MnO_3,有机中间层材料掺杂态的聚苯胺(PAn),自旋阀有机自旋阀“La_(0.67)Sr_(0.33)MnO_3/PAn/Co”分别作了研究,并在低温80K下观察到了自旋阀有机自旋阀约为1%的磁电阻效应。
本文共分为4章,主要内容如下:
第一章:简单介绍自旋阀研究概况,铁磁层材料的选择,有机中间层材料的选择及主要测试手段的概述,给出本文研究目的。
第二章:本章介绍了底电极材料La_(0.67)Sr_(0.33)MnO_3和中间层材料掺杂态PAn的制备工艺,并对磁学性质,电学性质,化学性质等做了系列研究。
第三章:本章介绍了有机自旋阀有机自旋阀的制备工艺,磁学性质,电学性质的研究并对1%的磁电阻效应给出了理论解释。
第四章:全文总结与展望
With the rapid development of technology and the widespread application of electronic devices, we entered in the information age. Electron spin is a typical quantum electronic properties. The discovery of giant magnetoresistance effect led to the field of magnetic storage and magnetic recording revolution and is one of the physical basis of spintronics. GMR hard disk read heads, GMR magnetic random memory (MRAM), GMR magnetic sensors application show the application of magnetoresistance commercialization, industrialization, as well as spin-electronics has provided a wealth of research material.
Organic semiconductor have the weak spin - orbit interaction and hyperfine interaction and long spin diffusion length, but inorganic semiconductor materials have not, so the organic semiconductor can be as a spin-valve ideal organic intermediate layer material; organic devices have more excellent performance of the mechanical properties of a good, simple process, preparation than inorganic components, and so on. In 2004 year an organic spin valve was reported and was concerned around the world, the research of lectronic spin injection and transport in organic spin-valve e, is of great significance to the spintronics research.
The author choosed La_(0.67)Sr_(0.33)MnO_3 as the bottom electrode, polyaniline doped state (PAn) as the organic intermediate layer, cobalt (Co) as the top electrode and fabricated "La_(0.67)Sr_(0.33)MnO_3/PAn / Co "sandwich structure of the organic spin valve. The author studied Magnetic material of ferromagnetism La_(0.67)Sr_(0.33)MnO_3, the middle layer of organic material doped states of polyaniline (PAn), spin-valve device "La_(0.67)Sr_(0.33)MnO_3/PAn/Co". At low temperatures under 80K we Observed the magnetoresistance effect of the spin-valve device is about 1% .
This article is divided into 4 chapters, are as follows:
Chapter I: a brief overview of the research of spin-valve, the basis for selection of iron magnetic material, the middle layer organic material. an brief summary of the main testing tools and the purpose of this paper.
Chapter II: This chapter describes the preparation and the properties of the bottom electrode material La_(0.67)Sr_(0.33)MnO_3 and middle layer materials doped state PAn, include magnetic properties, electrical properties, chemical properties, and so on.
Chapter III: This chapter describes the preparation and the properties of the organic spin-valve device, magnetic properties, electrical properties.The author give a theoretical explanation about the one percent magnetoresistance effect.
Chapter IV: The full text of Summary and Outlook
引文
[1] B. Dieny, V. S. Speriosu, et al. Giant Magnetoresistance in Soft Ferromagnetic Multilayers [J]. Phys.Rev, 1991, B 43:1297
[2] N. F. Mott. Electrons in Transition Metals [J].Adv. Phys, 1964, 13: 325~422
[3]李峰,辛林远,马於光等.有机自旋电子学的应用研究进展.科学通报,2008,53(23):2865~2871
[4]都有为.半导体自旋电子学.功能材料的研究进展,2006,3(4):15~20
[5] Dediu V, Murgia M, Matacotta F C, et al. Room temperature spin polarized injection in organic semiconductor. Solid State Commun, 2002, 122(3-4): 181~184
[6] Xiong.Z.H, Wu.Di, Vardeny.Z.V, et al. Giant magnetoresistance in organic spin-valves. Nature 427, (2004).
[7] Sayani Majumdara. Application of regioregular polythiophene in spintronic devices: Effect of interface. APPLIED PHYSICS LETTERS 89, 122114 (2006)
[8] N. A. Morley, A. Rao, D. Dhandapani,et al. Room temperature organic spintronics. JOURNAL OF APPLIED PHYSICS 103, 07F306 (2008)
[9] J. Unguris, R. J. Celotta, D. T. Pierce. Observation of two different oscillation periods in the exchange coupling of Fe/Cr/Fe (100)[J]. Phys. Rev. Lett, 1991, 67:140~143
[10] JULLIERE M. Tunneling between ferromagnetic films [J].Phys ical Letters A, 1975, 54: 225~226
[11] SLONCZEWSKI J C. Conductance and exchange coupling of two ferromagnets separated by a tunneling barrier [J ]. Phys ical Review B, 1989, 39: 6995~7002
[12]韩秀峰,刘东屏,温振超.从物理发现到成功应用-兼谈2007年度诺贝尔物理学奖授予巨磁电阻效应发现者.科技导报,2007,25(24)
[13] S.J.Xie, K.H.Ahn, D.L.Smith, et al. Ground-state properties of ferromagnetic metal / conjugated polymer interfaces [J]. Physics review B, 2003, 67: 125202-125205
[14] S.Jin, T. H.Tiefel, M.McComack et al. Thousandfold Change in Resistivity inMagnetoresistive La-Ca-Mn-O Films [J]. Science, 1994, 264: 413
[15] G. Briceno, H. Chang, X. Sun, Peter G. Schultz et al. A class of coblt oxide magnetresistance materials discovered with combinatorial synthesis [J]. Science. 1995, 270: 273
[16] Papadimitrakopoulos F, Zhang XM. Synth. Met, 1997, 85 (123), 1221~1224
[17]刘甜甜. La0.67Ca0.33MnO3/Alq3/Co三明治结构有机自旋阀有机自旋阀:[硕士学位论文]。山东大学图书馆,2007.
[18] M.Wohlgenanntetal, IEEProe{ireuitDevieesSyst152,385(2005)
[19]杨新萍. X射线衍射技术的发展和应用.山西师范大学学报(自然科学版),2007,21(1)
[20]丘利,胡玉和. X射线衍射技术及设备[M ] .北京:冶金工业出版社,1998. 233~256.
[21]蒋艳平,肖刘.射线衍射法测Zn电镀层中的残余应力[ J ].湘潭大学自然科学学报,2001,23 (4) :42~45.
[22]丛秋滋.多晶二维X射线衍射[M ].北京:科学出版社,1997. 220~232
[23]胡林彦,张庆军,沈毅. X射线衍射分析的实验方法及其应用.河北理工学院学报,2004,126(13)
[24]葛玉如.场发射扫描电镜在半导体中的若干应用.电子显微学报,1982.
[25]高家武.高分子近代测试技术.北京:北京航空航天大学出版社,1994. 199~205
[26]封伟,韦玮,吴洪才.可溶导电聚苯胺的合成及其性能研究. 1998,12(1)
[27]张志焜,崔作林.纳米技术与纳米材料.北京:国防工业出版社,2001. 131~145
[28]张志力,王哲明等,Sol-gel法制备La1- xSrxMnO3巨磁电阻薄膜材料.高等学校化学学报,1995,(5)
[29]陈晶.有机磁隧道阀的制备及物理性质的研究: [硕士学位论文]。华中科技大学图书馆,2007.
[30] Z.L. Liu, J. Zhang, K.L. Yao, et al. Journal of Sol-Gel Science and Technology, (2006)
[31]王小军. La2/3Sr1/3MnO3薄膜和La2/3Sr1/3MnO3/Pani/Al多层膜有机自旋阀的制备和电磁性质研究:[硕士学位论文]。华中科技大学图书馆,2008.
[32] J.Z.Sun, D W.Abraham, K Roche, SSP.Parkin, Temperature and Bias dependence of maganetoresistance in doped maganite thin film trilayer junctions,Arxiv Con-mat[J], 9807097, 1998.
[33] J.Z.Sun, D W.Araham, K Roche, et al, 9807097, (1998)
[34] Q Huang J. Li, X. J. Huang et al. Effect of magnetic coupling on the magnetoresistive properties in La0.67Sr0.33MnO3 /BaFe11.3(ZnSn)0.7O19 composites, J.Appl. Phys, 2001, 90:2924-2929
[35] de Groot R A, Mueller FM, van Engen P G, et al. New Class of Materials: Half-Metallic Ferromagnets. Phys. Rev. Lett., 1983, 50 :2024-2027
[36] Rit ter C, Ibarra M. R, De Teresa J.M. et al .Phys. Rev. B56 ,8902 (1997)
[37] Hwang H Y, Cheong S W, Ong N P, et al. Spin-polarized intergrain tunneling in La2/3Sr1/3MnO3. Phys Rev Lett, 1996, 77: 2 041~2 044
[38] Yu-Chang Li, Yu-Ju Lin, Hong-Jian Yeh, et al. Ion-modulated electrical Conduction in polyaniline-based field-effect transistors, APPLIED PHYSICS LETTERS 92, 093508 (2008)
[39]李伟平.导电聚苯胺的制备及其电磁性能的研究:[硕士学位论文]。大连理工大学图书馆,2007.
[40]孙建平,李宝铭,吴洪才.十二烷基苯磺酸掺杂聚苯胺的性能研究.精细化工,2002,19(10)
[41] PP Ruden, D L.Smith, Journal of Applied Physics, 95, 4898(2004)
[42] F.J. Wang, Z.H. Xiong, D. Wu, et al. Organic spintronics: The case of Fe/Alq3/Co spin-valve devices, Synthetic Metals 155 (2005) 172~175
[43] H. Vinzelberg, J. Schumann, D. Elefant,et al. Low temperature tunneling magnetoresistance on La,Sr…MnO3/Co junctions with organic spacer layers, JOURNAL OF APPLIED PHYSICS 103, 093720 (2008)
[44] Soumen Mandal, R.C.Budhani, Jiaqing He,et al. Diverging giant magnetoresistance in ferromagnet-superconductor-ferromagnet trilayers, PHYSICAL REVIEW B 78, 094502 (2008)
[2] N. F. Mott. Electrons in Transition Metals [J].Adv. Phys, 1964, 13: 325~422
[3]李峰,辛林远,马於光等.有机自旋电子学的应用研究进展.科学通报,2008,53(23):2865~2871
[4]都有为.半导体自旋电子学.功能材料的研究进展,2006,3(4):15~20
[5] Dediu V, Murgia M, Matacotta F C, et al. Room temperature spin polarized injection in organic semiconductor. Solid State Commun, 2002, 122(3-4): 181~184
[6] Xiong.Z.H, Wu.Di, Vardeny.Z.V, et al. Giant magnetoresistance in organic spin-valves. Nature 427, (2004).
[7] Sayani Majumdara. Application of regioregular polythiophene in spintronic devices: Effect of interface. APPLIED PHYSICS LETTERS 89, 122114 (2006)
[8] N. A. Morley, A. Rao, D. Dhandapani,et al. Room temperature organic spintronics. JOURNAL OF APPLIED PHYSICS 103, 07F306 (2008)
[9] J. Unguris, R. J. Celotta, D. T. Pierce. Observation of two different oscillation periods in the exchange coupling of Fe/Cr/Fe (100)[J]. Phys. Rev. Lett, 1991, 67:140~143
[10] JULLIERE M. Tunneling between ferromagnetic films [J].Phys ical Letters A, 1975, 54: 225~226
[11] SLONCZEWSKI J C. Conductance and exchange coupling of two ferromagnets separated by a tunneling barrier [J ]. Phys ical Review B, 1989, 39: 6995~7002
[12]韩秀峰,刘东屏,温振超.从物理发现到成功应用-兼谈2007年度诺贝尔物理学奖授予巨磁电阻效应发现者.科技导报,2007,25(24)
[13] S.J.Xie, K.H.Ahn, D.L.Smith, et al. Ground-state properties of ferromagnetic metal / conjugated polymer interfaces [J]. Physics review B, 2003, 67: 125202-125205
[14] S.Jin, T. H.Tiefel, M.McComack et al. Thousandfold Change in Resistivity inMagnetoresistive La-Ca-Mn-O Films [J]. Science, 1994, 264: 413
[15] G. Briceno, H. Chang, X. Sun, Peter G. Schultz et al. A class of coblt oxide magnetresistance materials discovered with combinatorial synthesis [J]. Science. 1995, 270: 273
[16] Papadimitrakopoulos F, Zhang XM. Synth. Met, 1997, 85 (123), 1221~1224
[17]刘甜甜. La0.67Ca0.33MnO3/Alq3/Co三明治结构有机自旋阀有机自旋阀:[硕士学位论文]。山东大学图书馆,2007.
[18] M.Wohlgenanntetal, IEEProe{ireuitDevieesSyst152,385(2005)
[19]杨新萍. X射线衍射技术的发展和应用.山西师范大学学报(自然科学版),2007,21(1)
[20]丘利,胡玉和. X射线衍射技术及设备[M ] .北京:冶金工业出版社,1998. 233~256.
[21]蒋艳平,肖刘.射线衍射法测Zn电镀层中的残余应力[ J ].湘潭大学自然科学学报,2001,23 (4) :42~45.
[22]丛秋滋.多晶二维X射线衍射[M ].北京:科学出版社,1997. 220~232
[23]胡林彦,张庆军,沈毅. X射线衍射分析的实验方法及其应用.河北理工学院学报,2004,126(13)
[24]葛玉如.场发射扫描电镜在半导体中的若干应用.电子显微学报,1982.
[25]高家武.高分子近代测试技术.北京:北京航空航天大学出版社,1994. 199~205
[26]封伟,韦玮,吴洪才.可溶导电聚苯胺的合成及其性能研究. 1998,12(1)
[27]张志焜,崔作林.纳米技术与纳米材料.北京:国防工业出版社,2001. 131~145
[28]张志力,王哲明等,Sol-gel法制备La1- xSrxMnO3巨磁电阻薄膜材料.高等学校化学学报,1995,(5)
[29]陈晶.有机磁隧道阀的制备及物理性质的研究: [硕士学位论文]。华中科技大学图书馆,2007.
[30] Z.L. Liu, J. Zhang, K.L. Yao, et al. Journal of Sol-Gel Science and Technology, (2006)
[31]王小军. La2/3Sr1/3MnO3薄膜和La2/3Sr1/3MnO3/Pani/Al多层膜有机自旋阀的制备和电磁性质研究:[硕士学位论文]。华中科技大学图书馆,2008.
[32] J.Z.Sun, D W.Abraham, K Roche, SSP.Parkin, Temperature and Bias dependence of maganetoresistance in doped maganite thin film trilayer junctions,Arxiv Con-mat[J], 9807097, 1998.
[33] J.Z.Sun, D W.Araham, K Roche, et al, 9807097, (1998)
[34] Q Huang J. Li, X. J. Huang et al. Effect of magnetic coupling on the magnetoresistive properties in La0.67Sr0.33MnO3 /BaFe11.3(ZnSn)0.7O19 composites, J.Appl. Phys, 2001, 90:2924-2929
[35] de Groot R A, Mueller FM, van Engen P G, et al. New Class of Materials: Half-Metallic Ferromagnets. Phys. Rev. Lett., 1983, 50 :2024-2027
[36] Rit ter C, Ibarra M. R, De Teresa J.M. et al .Phys. Rev. B56 ,8902 (1997)
[37] Hwang H Y, Cheong S W, Ong N P, et al. Spin-polarized intergrain tunneling in La2/3Sr1/3MnO3. Phys Rev Lett, 1996, 77: 2 041~2 044
[38] Yu-Chang Li, Yu-Ju Lin, Hong-Jian Yeh, et al. Ion-modulated electrical Conduction in polyaniline-based field-effect transistors, APPLIED PHYSICS LETTERS 92, 093508 (2008)
[39]李伟平.导电聚苯胺的制备及其电磁性能的研究:[硕士学位论文]。大连理工大学图书馆,2007.
[40]孙建平,李宝铭,吴洪才.十二烷基苯磺酸掺杂聚苯胺的性能研究.精细化工,2002,19(10)
[41] PP Ruden, D L.Smith, Journal of Applied Physics, 95, 4898(2004)
[42] F.J. Wang, Z.H. Xiong, D. Wu, et al. Organic spintronics: The case of Fe/Alq3/Co spin-valve devices, Synthetic Metals 155 (2005) 172~175
[43] H. Vinzelberg, J. Schumann, D. Elefant,et al. Low temperature tunneling magnetoresistance on La,Sr…MnO3/Co junctions with organic spacer layers, JOURNAL OF APPLIED PHYSICS 103, 093720 (2008)
[44] Soumen Mandal, R.C.Budhani, Jiaqing He,et al. Diverging giant magnetoresistance in ferromagnet-superconductor-ferromagnet trilayers, PHYSICAL REVIEW B 78, 094502 (2008)