高密度芯片封装中界面分层的数值模拟研究及其应用
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摘要
随着芯片封装密度的不断提高，芯片与基板之间起机械连接作用的粘结膜越来越薄，在封装过程中需要承受更为严酷的应力环境；同时，为了适应封装材料无铅化的趋势，粘结膜需要经历更为极端的可靠性试验。这些内部和外部的因素直接导致了高密度芯片封装中粘结膜界面分层现象日趋严重。所以，选取典型的高密度芯片封装类型、针对界面分层的影响因素进行数值模拟研究、将数值模拟方法应用于界面分层机理分析和实际的分层解决方案，显得尤为重要。
本文以高密度芯片封装中粘结膜界面分层为研究对象，选取典型的高密度芯片封装—玻璃载芯片封装和芯片级封装为实例，针对其中的界面分层现象进行相应的数值模拟研究，将验证之后的数值模拟方法应用于界面分层机理分析，最后在机理分析的基础上、通过数值模拟方法提出实用的分层解决方案。主要的研究内容和成果总结如下：
一、选取典型的高密度芯片封装—玻璃载芯片封装和芯片级封装为应用实例，研究其数值模拟方法、界面分层机理和分层解决方案，研究内容具有一定的代表性，对于其他高密度芯片封装的界面分层研究具有一定的参考价值。
二、针对玻璃载芯片封装中粘结膜—各向异性导电膜的界面分层现象，提出了“非线性、顺序热-力耦合”模拟方法，解决了在以往热-力载荷同时作用的封装过程模拟中、由于模拟技术限制而不能耦合瞬态热-力载荷的问题；并且针对各向异性导电膜封装模拟提出了“等效颗粒”的概念，解决了以往各向异性导电膜封装模拟中众多导电颗粒难以模型化的问题；通过“全局-局部”模拟方法，将各向异性导电膜的界面分层研究从毫米级深入到亚微米级。同时，针对湿气灵敏度试验(可靠性试验的一种，包括高温高湿试验和回流焊试验)中芯片级封装的芯片粘结膜界面分层现象，提出“直接湿气浓度法”，实现了环境温度和湿度变化情况下的湿气扩散模拟；并且在应用广泛的“微观蒸汽压模型”基础上提出“简化瞬态微观蒸汽压模型”，简化了封装模块内部蒸汽压的计算步骤。
三、通过翘曲测量实验验证了玻璃载芯片全局模型预测芯片翘曲量的精确性(数值模拟精度为93%)，通过芯片剪切实验验证了局部模型确定的易断裂面—各向异性导电膜/玻璃界面。同时，基于湿气释放解析解和独立变量方法从理论上验证了“直接湿气浓度法”的模拟精确性(数值模拟精度为97%)，通过实验验证了“直接湿气浓度法”应用于芯片级封装湿气扩散模拟的可行性，并且运用条件判断准则和“微观蒸汽压模型”理论验证了“简化瞬态微观蒸汽压模型”。
四、将数值模拟方法应用于界面分层机理分析，建立了芯片翘曲和各向异性导电膜界面分层之间的关系，指出玻璃载芯片封装冷却过程中、芯片与玻璃基板之间巨大的收缩量和翘曲量的差值，导致各向异性导电膜界面产生巨大的残余剪力和张力，从而引起界面分层；界面分层主要位于芯片边缘输出端的各向异性导电膜/玻璃界面。同时，通过对湿气灵敏度试验中芯片级封装内部湿气扩散和蒸汽压变化的数值模拟结果分析，指出回流焊高温时湿气蒸汽化产生的蒸汽压是导致芯片粘结膜界面分层的主要因素。
五、基于分层机理分析、通过对玻璃载芯片封装过程的参数化模拟，提出了改善各向异性导电膜界面分层的方案：降低绑头温度，提高玻璃基板温度，降低绑定温度差；减小芯片厚度，缩短芯片长度，增加玻璃基板厚度；加强各向异性导电膜/玻璃基板界面的结合强度。同时，基于芯片级封装中芯片粘结膜界面分层机理的分析，通过湿气扩散和蒸汽压变化的数值模拟以及湿气灵敏度试验的验证，提出了解决芯片粘结膜界面分层的方案：减少基板厚度和延长回流焊的保温过程。
本文选取的两个应用实例具有一定的代表性，对于其他高密度芯片封装的界面分层研究具有一定的借鉴意义。本文提出的“非线性、顺序热-力耦合”模拟方法适用于热-力载荷下的芯片封装过程的模拟，“等效
颗粒”模拟方法适用于应用各向异性导电膜的芯片封装模拟；“直接湿气浓度法”和“简化瞬态微观蒸汽压模型”分别适用于高密度芯片封装的湿气扩散模拟和蒸汽压变化模拟。本文提出的粘结膜界面分层解决方案，已在玻璃载芯片封装和芯片级封装中得到了实验验证，具有一定的实用价值。
With the more density of the electronic packaging, the film, which is the mechanical interconnection between IC and substrate, becomes thinner. It suffers more serious stress condition in the packaging process. With the trend of lead-free material application, the film would suffer more stringent reliability test. These inner and outer factors cause interface delamination, which is more serious in the high density package. Therefore, it is important to adopt the typical packages, develop numerical simulation study for interface delamination, and apply the numerical methods to delamination mechanism analysis and solutions.
This paper studied the interface delamination in high density package, adopted two typical packages—chip on glass (COG) and chip scale package (CSP), developed advanced numerical simulation methods for interface delamination, applied the numerical methods to mechanism analysis, gave the methods to solve the delamination for different packages. The content and results are summarized as follows.
Firstly, this paper adopted two typical packages—COG and CSP to study numerical methods, delamination mechanism and solutions respectively. The interface delamination study can be applied to other high density electric packages.
Secondly, this paper developed several advanced numerical simulation methods. For the anisotropic conductive film (ACF) delamination of COG, the paper proposed novel non-linear and sequentially coupled thermal-mechanical method to solve the uncoupling of transient thermal-mechanical loadings in the previous packaging process modeling. This paper also proposed the equivalent particle method for ACF packaging simulation to model the numerous conductive particles. By the global-local method, the delamination study was implemented from mm scale to um scale. Meanwhile, for the die-attach (DA) film interface delamination of CSP during preconditioning test (one of the reliability test, including soaking and reflow), the paper proposed the moisture diffusion modeling method, named direct concentration approach (DCA), to simulate the moisture diffusion under varying ambient temperature and humidity. Also, this paper proposed simplified transient micromechanics-based vapor pressure model (STMVPM) to simplify the vapor pressure calculation inside electronic package.
Thirdly, the COG process was simulated with advanced modeling methods, the IC warpage from global model was validated with the resolution of 93% by warpage measurement system, and ACF/glass interface was determined to be easier to delaminate by local model and IC shear test. Meanwhile, moisture diffusion and vapor pressure evolution during preconditioning test were simulated with advanced modeling methods, and the DCA was validated by analytical solution and independent variable method with the resolution of 97%. The feasibility of DCA application to CSP was validated by experiments. The STMVPM was validated by conditional criterion and micromechanics-based vapor pressure model.
Fourthly, the relationship between IC warpage and ACF delamination was established with the dalamination mechanism analysis. The ACF delamination was induced due to the large difference of shrinkage and warpage between IC and glass substrate during cooling, which caused large residual shear and normal stress at ACF interface. The interface delamination located at the ACF/glass interface at the IC edge. Meanwhile, vapor pressure was determined as the major driving force for the DA film delamination with the analysis of moisture diffusion and vapor pressure evolution during preconditioning test.
Lastly, with the parametric modeling and delamination mechanism analysis for COG packaging process, ACF delamination can be avoided by decreasing bonding head temperature, increasing glass substrate temperature, decreasing bonding temperature difference, thinning IC thickness, shortening IC length, thickening glass substrate thickness, improve adhesion between ACF and glass. Meanwhile, with the DA film delamination mechanism analysis, moisture diffusion and vapor pressure evolution modeling, and test validation, DA film delamination can be solved by thinning substrate thickness and extending in-line baking of reflow process.
The interface delamination study based on the COG and CSP can be applied to other high density electric packages. The non-linear and sequentially coupled thermal-mechanical method can be applied to the packaging process modeling under thermal-mechanical loadings. The equivalent particle method can be applied to the ACF bonding simulation. The DCA and STMVPM can be applied to moisture diffusion and vapor pressure evolution modeling for high density electric package. The methods to solving film delamination in this paper have been validated in the COG and CSP.
本文以高密度芯片封装中粘结膜界面分层为研究对象，选取典型的高密度芯片封装—玻璃载芯片封装和芯片级封装为实例，针对其中的界面分层现象进行相应的数值模拟研究，将验证之后的数值模拟方法应用于界面分层机理分析，最后在机理分析的基础上、通过数值模拟方法提出实用的分层解决方案。主要的研究内容和成果总结如下：
一、选取典型的高密度芯片封装—玻璃载芯片封装和芯片级封装为应用实例，研究其数值模拟方法、界面分层机理和分层解决方案，研究内容具有一定的代表性，对于其他高密度芯片封装的界面分层研究具有一定的参考价值。
二、针对玻璃载芯片封装中粘结膜—各向异性导电膜的界面分层现象，提出了“非线性、顺序热-力耦合”模拟方法，解决了在以往热-力载荷同时作用的封装过程模拟中、由于模拟技术限制而不能耦合瞬态热-力载荷的问题；并且针对各向异性导电膜封装模拟提出了“等效颗粒”的概念，解决了以往各向异性导电膜封装模拟中众多导电颗粒难以模型化的问题；通过“全局-局部”模拟方法，将各向异性导电膜的界面分层研究从毫米级深入到亚微米级。同时，针对湿气灵敏度试验(可靠性试验的一种，包括高温高湿试验和回流焊试验)中芯片级封装的芯片粘结膜界面分层现象，提出“直接湿气浓度法”，实现了环境温度和湿度变化情况下的湿气扩散模拟；并且在应用广泛的“微观蒸汽压模型”基础上提出“简化瞬态微观蒸汽压模型”，简化了封装模块内部蒸汽压的计算步骤。
三、通过翘曲测量实验验证了玻璃载芯片全局模型预测芯片翘曲量的精确性(数值模拟精度为93%)，通过芯片剪切实验验证了局部模型确定的易断裂面—各向异性导电膜/玻璃界面。同时，基于湿气释放解析解和独立变量方法从理论上验证了“直接湿气浓度法”的模拟精确性(数值模拟精度为97%)，通过实验验证了“直接湿气浓度法”应用于芯片级封装湿气扩散模拟的可行性，并且运用条件判断准则和“微观蒸汽压模型”理论验证了“简化瞬态微观蒸汽压模型”。
四、将数值模拟方法应用于界面分层机理分析，建立了芯片翘曲和各向异性导电膜界面分层之间的关系，指出玻璃载芯片封装冷却过程中、芯片与玻璃基板之间巨大的收缩量和翘曲量的差值，导致各向异性导电膜界面产生巨大的残余剪力和张力，从而引起界面分层；界面分层主要位于芯片边缘输出端的各向异性导电膜/玻璃界面。同时，通过对湿气灵敏度试验中芯片级封装内部湿气扩散和蒸汽压变化的数值模拟结果分析，指出回流焊高温时湿气蒸汽化产生的蒸汽压是导致芯片粘结膜界面分层的主要因素。
五、基于分层机理分析、通过对玻璃载芯片封装过程的参数化模拟，提出了改善各向异性导电膜界面分层的方案：降低绑头温度，提高玻璃基板温度，降低绑定温度差；减小芯片厚度，缩短芯片长度，增加玻璃基板厚度；加强各向异性导电膜/玻璃基板界面的结合强度。同时，基于芯片级封装中芯片粘结膜界面分层机理的分析，通过湿气扩散和蒸汽压变化的数值模拟以及湿气灵敏度试验的验证，提出了解决芯片粘结膜界面分层的方案：减少基板厚度和延长回流焊的保温过程。
本文选取的两个应用实例具有一定的代表性，对于其他高密度芯片封装的界面分层研究具有一定的借鉴意义。本文提出的“非线性、顺序热-力耦合”模拟方法适用于热-力载荷下的芯片封装过程的模拟，“等效
颗粒”模拟方法适用于应用各向异性导电膜的芯片封装模拟；“直接湿气浓度法”和“简化瞬态微观蒸汽压模型”分别适用于高密度芯片封装的湿气扩散模拟和蒸汽压变化模拟。本文提出的粘结膜界面分层解决方案，已在玻璃载芯片封装和芯片级封装中得到了实验验证，具有一定的实用价值。
With the more density of the electronic packaging, the film, which is the mechanical interconnection between IC and substrate, becomes thinner. It suffers more serious stress condition in the packaging process. With the trend of lead-free material application, the film would suffer more stringent reliability test. These inner and outer factors cause interface delamination, which is more serious in the high density package. Therefore, it is important to adopt the typical packages, develop numerical simulation study for interface delamination, and apply the numerical methods to delamination mechanism analysis and solutions.
This paper studied the interface delamination in high density package, adopted two typical packages—chip on glass (COG) and chip scale package (CSP), developed advanced numerical simulation methods for interface delamination, applied the numerical methods to mechanism analysis, gave the methods to solve the delamination for different packages. The content and results are summarized as follows.
Firstly, this paper adopted two typical packages—COG and CSP to study numerical methods, delamination mechanism and solutions respectively. The interface delamination study can be applied to other high density electric packages.
Secondly, this paper developed several advanced numerical simulation methods. For the anisotropic conductive film (ACF) delamination of COG, the paper proposed novel non-linear and sequentially coupled thermal-mechanical method to solve the uncoupling of transient thermal-mechanical loadings in the previous packaging process modeling. This paper also proposed the equivalent particle method for ACF packaging simulation to model the numerous conductive particles. By the global-local method, the delamination study was implemented from mm scale to um scale. Meanwhile, for the die-attach (DA) film interface delamination of CSP during preconditioning test (one of the reliability test, including soaking and reflow), the paper proposed the moisture diffusion modeling method, named direct concentration approach (DCA), to simulate the moisture diffusion under varying ambient temperature and humidity. Also, this paper proposed simplified transient micromechanics-based vapor pressure model (STMVPM) to simplify the vapor pressure calculation inside electronic package.
Thirdly, the COG process was simulated with advanced modeling methods, the IC warpage from global model was validated with the resolution of 93% by warpage measurement system, and ACF/glass interface was determined to be easier to delaminate by local model and IC shear test. Meanwhile, moisture diffusion and vapor pressure evolution during preconditioning test were simulated with advanced modeling methods, and the DCA was validated by analytical solution and independent variable method with the resolution of 97%. The feasibility of DCA application to CSP was validated by experiments. The STMVPM was validated by conditional criterion and micromechanics-based vapor pressure model.
Fourthly, the relationship between IC warpage and ACF delamination was established with the dalamination mechanism analysis. The ACF delamination was induced due to the large difference of shrinkage and warpage between IC and glass substrate during cooling, which caused large residual shear and normal stress at ACF interface. The interface delamination located at the ACF/glass interface at the IC edge. Meanwhile, vapor pressure was determined as the major driving force for the DA film delamination with the analysis of moisture diffusion and vapor pressure evolution during preconditioning test.
Lastly, with the parametric modeling and delamination mechanism analysis for COG packaging process, ACF delamination can be avoided by decreasing bonding head temperature, increasing glass substrate temperature, decreasing bonding temperature difference, thinning IC thickness, shortening IC length, thickening glass substrate thickness, improve adhesion between ACF and glass. Meanwhile, with the DA film delamination mechanism analysis, moisture diffusion and vapor pressure evolution modeling, and test validation, DA film delamination can be solved by thinning substrate thickness and extending in-line baking of reflow process.
The interface delamination study based on the COG and CSP can be applied to other high density electric packages. The non-linear and sequentially coupled thermal-mechanical method can be applied to the packaging process modeling under thermal-mechanical loadings. The equivalent particle method can be applied to the ACF bonding simulation. The DCA and STMVPM can be applied to moisture diffusion and vapor pressure evolution modeling for high density electric package. The methods to solving film delamination in this paper have been validated in the COG and CSP.
引文
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