导电玻璃和硅上热壁外延生长砷化镓薄膜的研究
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摘要
本文介绍以Si和SnO_2／Glass两种材料为衬底，采用热壁外延的方法得到结构良好的，适合作GaAs太阳电池的GaAs多晶薄膜。采用电子探针(EPMA)测定薄膜的组份，表面与剖面形貌，X射线衍射(XRD)分析生长薄膜的结构，Raman散射(RSS)、光致发光光谱(PL)分析其光学性质，并且测定了薄膜的导电类型和方块电阻两个基本的电学参数。结构表明该薄膜性能良好，表面呈绒面结构，晶粒为柱状结构，适合制作GaAs薄膜太阳电池。全面分析了现有制备工艺条件对GaAs薄膜性能的影响，得出最佳的生长条件。
SnO_2／Glass：源温为930℃，衬底温度为500℃，生长时间4小时
Si：源温为900℃，衬底温度为700℃，生长时间3小时
GaAs polycrytalline thin films with good performance were prepared on conducting glass and Si by hot wall epitaxy (HWE) , which were suitable for solar cell . Electron probe micro-analyzer (EPMA)was applied for the component , surface and cross-section mrophology of grown films , and X-ray diffraction (XRD) for their structure ; Raman scattering spectrum(RSS) and photoluminescene(PL) were used for evaluating their optical
characteristics . We also study electrical characteristics of films. The results are shown that , there is textured surface and columnar grain of grown GaAs polycrystalline thin films , which are greatly promising to become the candidate of solar cell with low cost and high efficiency. Meanwhile, by analyzing the effect of procedure on films feature all-sidely , it was obtained , that is source temperature should be 930℃, substrate temperature
should be 500℃ for conducting glass and source temperature should be 900 ℃ , substrate temperature should be 700℃ for Si.
SnO_2／Glass：源温为930℃，衬底温度为500℃，生长时间4小时
Si：源温为900℃，衬底温度为700℃，生长时间3小时
GaAs polycrytalline thin films with good performance were prepared on conducting glass and Si by hot wall epitaxy (HWE) , which were suitable for solar cell . Electron probe micro-analyzer (EPMA)was applied for the component , surface and cross-section mrophology of grown films , and X-ray diffraction (XRD) for their structure ; Raman scattering spectrum(RSS) and photoluminescene(PL) were used for evaluating their optical
characteristics . We also study electrical characteristics of films. The results are shown that , there is textured surface and columnar grain of grown GaAs polycrystalline thin films , which are greatly promising to become the candidate of solar cell with low cost and high efficiency. Meanwhile, by analyzing the effect of procedure on films feature all-sidely , it was obtained , that is source temperature should be 930℃, substrate temperature
should be 500℃ for conducting glass and source temperature should be 900 ℃ , substrate temperature should be 700℃ for Si.
引文
[1]雷永泉等著，新能源材料，天津出版社(2000年12月)
[2]李迎军著，《选择性发射电极太阳电池的研究以光伏工程中最佳倾角的研究》(硕士生毕业论文)2001，6
[3]刘祖明等著，《太阳电池研究现状及发展》，第六届光伏会议论文集，2000，10
[4]赵富鑫等著，太阳电池及其应用，国防工业出版社
[5]陈庭金，袁海荣，Al_xGa_(1-x)As/Ga_(1-x)As太阳电池的背电场结构—评《对Ga_(1-x)As/GaAs太阳电池结构一点新的看法》，电源技术，1997，21(6)，267—271
[6]M.Imaizumi,M.Adachi,Y. Fujii,etc. Low-temperature growth of GaAs polycrystallin filmes on glass substrates for space solar cell application.[J]. Crystall.growth,2000,221:668-629
[7]薛增泉等著，薄膜物理，电子工业出版社
[8]康昌鹤等著，半导体超晶格材料及其应用，电子工业出版社
[9]施兆顺，王东城，《硅—二氧化锡异质结太阳电池的研制》，云南师范大学学报(自然科学版)(1986年3月)
[10]涂洁磊，章晨静等，《热壁外延生长GaAs薄膜的结构特征[J]．(录用，待发表)
[11]涂洁磊，章晨静等，《生长条件对GaAs/Si薄膜结构特性的影响》[J]．(待发表)
[12]中科院半导体研究所理化分析中心研究室，半导体检测与分析，科学出版社
[13]孙以树，半导体分析测试技术，冶金工业出版社
[14]杨南如著，无机非金属材料测试方法，武汉工业大学出版社
[15]Ⅲ-Ⅴ族半导体化合物制备，科学技术文献出版社重庆分社(1975年)
[16](美)施敏著，黄振钢译，半导体器件物理，电子工业出版社
[17]冯端，金国钧著，凝聚态物理学新论，上海科学技术出版社
[18]S.Laaksonen,J.Keranen,W. Li,etc. Gas-source molecular beam epitaxy of GaAs for solar cell applications[C].Proceeding of 16th European Photovoltaic Solar Energy Conference, 1-5 May 2000,Glasgrow, UK.(CD-ROM)
[19]V. Alberts,J.H.Neething,A.W. Leith.Correlation between structural,optical,and electrical properties of GaAs grown on (001) Si.[J].J.Appli. Phys., 1994,75(11):7258-7265
[20]M.Yamaguchi,M.Tachiawa,Y. Ltoh,etc. Thermal annealing effects of defect reduction in GaAs on Si substrates.[J].Apply. Phys.,1990,68(9):4518-4522
[21]F.Omnes,J.C.Guillause,G.Nataf, etc. Substrate free GaAs photovoltaic cells on
[21]F. Omnes,J.C.Guillause,G.Nataf,etc. Substrate free GaAs photovoltaic cells on Pd-coated silicon with 20% Am1.5 efficiency.[J]IEEE Transaction on Electron Devices. 1996,43(11): 1806-1811
[22J.Arokaraj,H.Taguchi,K.Itakura,ect. Electrical characteristics of GaAs on Si substrates by bonding using selenium sulphnium sulphide-A study for solar cell applications[C].Proceeding of 12th Intenational Photovoltaic Science and Engineering Conference.11-15 June 2001 ,Jeju,Korea.(CD-ROM)
[23]M.Imaizumi,M.Adachi,Y. Fujii,ect. Low-temperature growth of GaAs Polycrystalline films on glass substrates for space solar cell application [J].2002,221:688-692
[24]涂洁磊，章晨静等，《在导电玻璃上热壁外延生长GaAs薄膜》[J]．(待发表)
[25]N.Romeo,A.Bosio,R.Tedeshi,A.Romeo,V. Canevari,A highly efficient and stable CdTe/CdS thin film solar cell,Solar Energy Materials and Solar Cells 58(1999)209-218
[2]李迎军著，《选择性发射电极太阳电池的研究以光伏工程中最佳倾角的研究》(硕士生毕业论文)2001，6
[3]刘祖明等著，《太阳电池研究现状及发展》，第六届光伏会议论文集，2000，10
[4]赵富鑫等著，太阳电池及其应用，国防工业出版社
[5]陈庭金，袁海荣，Al_xGa_(1-x)As/Ga_(1-x)As太阳电池的背电场结构—评《对Ga_(1-x)As/GaAs太阳电池结构一点新的看法》，电源技术，1997，21(6)，267—271
[6]M.Imaizumi,M.Adachi,Y. Fujii,etc. Low-temperature growth of GaAs polycrystallin filmes on glass substrates for space solar cell application.[J]. Crystall.growth,2000,221:668-629
[7]薛增泉等著，薄膜物理，电子工业出版社
[8]康昌鹤等著，半导体超晶格材料及其应用，电子工业出版社
[9]施兆顺，王东城，《硅—二氧化锡异质结太阳电池的研制》，云南师范大学学报(自然科学版)(1986年3月)
[10]涂洁磊，章晨静等，《热壁外延生长GaAs薄膜的结构特征[J]．(录用，待发表)
[11]涂洁磊，章晨静等，《生长条件对GaAs/Si薄膜结构特性的影响》[J]．(待发表)
[12]中科院半导体研究所理化分析中心研究室，半导体检测与分析，科学出版社
[13]孙以树，半导体分析测试技术，冶金工业出版社
[14]杨南如著，无机非金属材料测试方法，武汉工业大学出版社
[15]Ⅲ-Ⅴ族半导体化合物制备，科学技术文献出版社重庆分社(1975年)
[16](美)施敏著，黄振钢译，半导体器件物理，电子工业出版社
[17]冯端，金国钧著，凝聚态物理学新论，上海科学技术出版社
[18]S.Laaksonen,J.Keranen,W. Li,etc. Gas-source molecular beam epitaxy of GaAs for solar cell applications[C].Proceeding of 16th European Photovoltaic Solar Energy Conference, 1-5 May 2000,Glasgrow, UK.(CD-ROM)
[19]V. Alberts,J.H.Neething,A.W. Leith.Correlation between structural,optical,and electrical properties of GaAs grown on (001) Si.[J].J.Appli. Phys., 1994,75(11):7258-7265
[20]M.Yamaguchi,M.Tachiawa,Y. Ltoh,etc. Thermal annealing effects of defect reduction in GaAs on Si substrates.[J].Apply. Phys.,1990,68(9):4518-4522
[21]F.Omnes,J.C.Guillause,G.Nataf, etc. Substrate free GaAs photovoltaic cells on
[21]F. Omnes,J.C.Guillause,G.Nataf,etc. Substrate free GaAs photovoltaic cells on Pd-coated silicon with 20% Am1.5 efficiency.[J]IEEE Transaction on Electron Devices. 1996,43(11): 1806-1811
[22J.Arokaraj,H.Taguchi,K.Itakura,ect. Electrical characteristics of GaAs on Si substrates by bonding using selenium sulphnium sulphide-A study for solar cell applications[C].Proceeding of 12th Intenational Photovoltaic Science and Engineering Conference.11-15 June 2001 ,Jeju,Korea.(CD-ROM)
[23]M.Imaizumi,M.Adachi,Y. Fujii,ect. Low-temperature growth of GaAs Polycrystalline films on glass substrates for space solar cell application [J].2002,221:688-692
[24]涂洁磊，章晨静等，《在导电玻璃上热壁外延生长GaAs薄膜》[J]．(待发表)
[25]N.Romeo,A.Bosio,R.Tedeshi,A.Romeo,V. Canevari,A highly efficient and stable CdTe/CdS thin film solar cell,Solar Energy Materials and Solar Cells 58(1999)209-218