直流电弧等离子体喷射金刚石膜残余应力及开裂破坏研究
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摘要
金刚石膜是一种性能极其优异的多用途功能材料,在机械加工、航空航天、微电子制造等众多领域具有广泛的应用前景。但金刚石膜在制备过程中,过高的残余应力容易引起膜开裂破坏这一问题尚未得到很好地解决。本文以直流电弧等离子体喷射法制备自支撑金刚石厚膜为研究对象,以等离子体炬内外复杂的电、磁、热、力多场耦合变量以及金刚石膜热-力耦合条件下的应力为研究目标,对等离子体的流动和传热以及自支撑金刚石厚膜在制备中各个阶段的应力进行数值模拟,并揭示大尺寸金刚石厚膜发生开裂破坏的原因及其影响因素。
     主要的研究工作如下:
     1.以沉积金刚石膜的磁控直流等离子体炬为研究对象,在经典的纳维叶-斯托克斯(Navier-Stokes)流动方程和能量方程中引入多项源项,包括因外磁场和内部自感应磁场引起的洛伦兹力、辐射冷却、焦耳热以及Ar-H_2混合等离子体因温度、压强、电场及浓度等梯度引起的对流扩散等,并结合组分质量守恒、广义欧姆定律及麦克斯韦方程组,建立了炬内等离子体的磁流体动力学(MHD)多场耦合模型。对FLUENT软件成功地进行了二次开发,有效地对所建MHD耦合模型中所涉及的流场、温度场及电磁场进行了仿真。得到了在有与无外磁场情形下,等离子体炬内的速度场、温度场和电流密度场,以及炬出口的速度和温度沿径向的分布。
     2.基于上述等离子体炬内的MHD多场耦合模拟计算结果,将炬出口处的速度、温度等参数的出口条件作为炬外沉积腔内等离子体射流的入口条件,建立了等离子体射流的计算流体动力学模型。利用二次开发后的FLUENT软件对沉积腔内金刚石膜上方的等离子体射流的流动和传热进行数值模拟。得到了等离子体射流的速度场及温度场,同时还得到了金刚石膜上表面温度沿径向的分布,为本文其后对金刚石膜的热-力耦合分析奠定了基础。
     3.运用膜/基系统在冷却过程中的瞬态热-力耦合模型,考虑了温度与应变之间的耦合效应,对膜/基系统在冷却过程中的温度场和热应力场,以及冷却到室温时的热残余应力场进行了有限元数值模拟。在模拟中,膜/基系统冷却时非均匀温度场的初始条件来自于本文在实际制备条件下的多场耦合计算结果,这使得在热应力场和热残余应力场的模拟结果中,不仅体现了膜/基材料热膨胀系数差异的影响,还体现了膜/基系统内各点温度非均匀性的影响,故所模拟计算的应力结果更加真实准确。基于金刚石膜的热应力场和热残余应力场的模拟结果,分析研究了金刚石膜脱落或开裂破坏的原因,对实际的破坏现象进行了较合理地解释。
     4.采用单元“生死”技术,对脱离基体时的自支撑金刚石厚膜内热残余应力的再分配进行了研究,定量地得到了金刚石膜热残余应力的释放情况,对求算本征应力提出了有益的意见。
     5.研究了金刚石膜热残余应力和开裂破坏的一些影响因素,其研究成果对于金刚石膜残余应力的合理控制、制备工艺的改进和成品率的提高等,均有较大的参考价值。
The unique characteristics of diamond film make it extremely attractive for numerous applications in machining, aerospace, microelectronics and so on. But during the process of producing diamond film by chemical vapor deposited technology, such as DC arc plasma jet, the problem of film cracking caused by excessive residual stresses has not been well solved yet. The objective of this work is to study the complicated multi-field coupling variables of electricity, magnetism, heat, mechanics inside and outside the plasma torch, and the stresses in diamond film based on thermal-mechanic coupling. The flowing and conducting heat of plasma were simulated, and the stresses existed in the various stages of self-standing diamond thick film were also simulated. Moreover, the cause and influence factors of diamond film cracking were revealed.
     The principal researches are as the follows:
     (1) A coupling magneto-hydrodynamic (MHD) model of magnetic controlled DC plasma torch, which was used for diamond film deposition, was presented. The model includes Navier-Stokes and energy equations modified by the addition of some source terms, which reflect the Lorentz force due to self-induced and external magnetic fields, radiative cooling, joule heating, and the diffusive and convective enthalpy fluxes due to the temperature, pressure, electric field, and concentration gradients of Ar-H_2 mixture plasma. In addition, the mass conservation and species conservation equation, generalized ohm's law, and Maxwell's equations were also modeled. By reprogramming the software FLUENT, the author effectively simulated the fluid field, temperature field and electromagnetic field in the MHD coupling model. These fields in the torch were obtained respectively with and without external magnetism, and the radial distributions of velocity and temperature at the outlet of the torch were also obtained.
     (2) Based on the results of these fields mentioned above ,a computational fluid dynamics model was established for the plasma jet spraying from the torch to the deposition chamber by taking the outlet conditions of velocity and temperature at the torch exit as their inlet conditions of the plasma jet. The flowing and conducting heat of plasma jet over the diamond film were simulated by using the reprogramming software FLUENT. The velocity field and temperature field of plasma jet were obtained, and the radial distribution of temperature on the upside of diamond film was also obtained, which laid a foundation for analyzing the thermal-mechanic coupling in the diamond film later.
     (3) A transient thermal-mechanic coupling model was adopted in the cooling process of film/substrate system. In this model, the coupling effect between temperature and strain was considered. A finite element simulation was made about the temperature field and thermal stresses fields during the cooling process of film/substrate system and about the thermal residual stresses fields at indoor temperature. The uneven initial temperature condition used for the simulation during the cooling period of the film/substrate system came from the calculated result of the coupling multi-field on real production condition. Both the thermal expansive coefficient difference of film/substrate material and the non-uniformity of temperature at each point in film/substrate system were reflected in the simulated results of thermal stresses and thermal residual stresses. Therefore, the simulated results of stresses are more accurate. Based on these simulated results, the cause of detachment and cracking of diamond film were analyzed, and the actual damage phenomenon was rationally explained.
     (4) The redistribution of thermal residual stresses in self-standing thick diamond film was studied by using "life or death element" technology while the film separated from substrate. So, the release of thermal residual stresses was obtained quantitatively. A useful suggestion about how to compute intrinsic stresses was made.
     (5) Some influence factors of residual stresses and cracking damage of diamond film were studied. These research achievements have considerable reference values for the control of residual stresses, the improvement of producing technology, and the increase of diamond film finished product ratio.
引文
[1]吕反修,唐伟忠,李成明,陈广超,等。大面积光学级金刚石自支撑膜研究进展[J].红外技术,2003,25(1):1-4.
    [2]Harris D C.Application of diamond films and related materials[C].Third International Conference,1995:539.
    [3]Zuo D W,Song S L,Xiang B K,Wang M.Some Key Points for EACVD Thick Diamond Film Preparation[J].Key Engineering Materials,2004,258-259:517- 521.
    [4]陈广超,李成明,张恒大,等.直流等离子体法中脱膜开裂的金刚石膜组织结构分析[J],人工晶体学报,2003,32(5):518-523.
    [5]熊礼威,江建华,满卫东,东.化学气相沉积光学级金刚石薄膜的研究进展[J].2006,43(7):1-5.
    [6]Busch John V,Dismukes John P.Trends and prospective for CVD diamond[J].Diamond and Related Materials,1994,(3):295.
    [7]Tang W,Liu J,Huang T,L(?) F.Preparation of diamond wafers by DC arc jet plasma process under a gas recycling mode[J].Diamond and Related Materials,10(2001):327-331.
    [8]吕反修,黄天斌,唐伟忠,等.直流电弧等离子体喷射金刚石厚膜生长不稳定性问题[J].材料热处理学报,2001,22(1):46-50.
    [9]Windischmann H,Gray K J.Stress measurement of CVD diamond films[J].Diamond and Related Materials,4(1995)837-842.
    [10]Kazuhisa Miyoshi,Richard L C Wu.Measurements and diagnostics of diamond films and coatings[J].Measurement 29(2001):13-126.
    [11]Jeong J h,Lee S Y,Lee W S,et al.Mechanical analysis for crack-free release of chemical-vapor-deposited diamond wafers.Diamond and Related Materials 11(2002) 1597-1605.
    [12]L(?) F X,Fu Y L,Zhong G F,et al.Fracture behavior of thick diamond films prepared by DC arc plasma jet method[J].Diamond and Related Materials 7(1998)733-736.
    [13]吕反修,付一良,钟国仿,唐伟忠,等.CVD金刚石膜的断裂行为[J].金属热处理学报,1997,18(3):117-122.
    [14]Telling R H,Field J E.Fracture in CVD diamond[J].International Journal of Refractory Metals & Hard Materials 16(1998)269-276.
    [15]Kosky P G,Anthony T R.Fracture-free release of CVD diamond[J].Diamond and Related Materials,5(1996):1313-1317.
    [16]孙振路,张平伟,吴晓波,等.影响CVD金刚石膜完整性的几个关键问题[J].超硬材料工程,2008,20(4):11-13.
    [17]金曾孙,吕宪义,顾长志,等.金刚石厚膜的制备及应用研究[J].高技术通讯.1994,8:1-4.
    [18]黄天斌,刘敬明,钟国仿,等.大面积无衬底自支撑金刚石厚膜沉积[J]。北京科技大学学报,2000,22(3):234-237.
    [19]Michler J,Mermoux M,Kaenel Y,et al.Residual stress in diamond films:origins and modelling[J].Thin Solid Films,1999,357:189-201.
    [20]曾效舒,高志栋,吴得海.金刚石薄膜在刀具上的沉积与应用[J].机械工艺师,1996,6:31-32.
    [21]匡同春,王晓初,王成勇,等.CVD金刚石厚膜刀具的研究进展与应用现状[J].金刚石与磨料磨具工程,2000,2(116):27-30.
    [22]吕反修,唐伟忠,李成明,等.直流电弧等离子体喷射在金刚石膜制备和产业化中的应用[J].金属热处理,2008,33(1):43-48.
    [23]孙亦宁.金刚石膜的应用和发展现状[J].真空与低温,1994,13(1):50-54.
    [24]朱建勇,梅炳初,李力,等。CVD金刚石薄膜的制备方法及应用[J].炭素技术,2002,120(3):30-33.
    [25]Sakaguchi I,Gamo M N,Kikuchi Y,et al.Sulfur:A donor do-pant for n-type diamond semiconductors[J].Phys Rev,1999,B60:B2139-2141.
    [26]Higaki K.High power durability of diamond surface acoustic wave filter[J]IEEE Transactions on Ultrasonics,Ferroelectrics and Frequency Control,1997,44(6):1395-1400.
    [27]蒋翔六,等.金刚石薄膜研究进展[M].北京:化学工业出版社,1991。
    [28]L(?) F X,Tang W Z,Huang T B,et al.Large area high quality diamond film deposition by high power DC arc plasma jet operating at gas recycling mode[J].Diamond andRelated Materials,10(2001):1551-1558.
    [29]翟华嶂,曹传宝,朱鹤孙.直流电弧等离子体喷射(DCPJ)法在沉积金刚石膜上的应用[J].材料导报,1999,13(1):32-34.
    [30]Breiter M,Doppleb C,Weiβ K H,et al.Diamond synthesis with a DC plasma jet:control of the substrate temperature[J].Diamond and Related Materials,9(2000):333-336.
    [31]Takata Y.Xanes and raman spectroscopic studies of diamond films synthesized by hot filament CVD[J].J Appl Phys,1989,28(7):1282.
    [32]庞国峰。用热丝法生长大面积高质量金刚石薄膜[J].薄膜与科学,1995,8(2):41.
    [33]陈广超,等.分离送入甲烷和氢气的热丝法沉积金刚石膜[J].材料研究学报,1997,11(3):331.
    [34]Hov Y Y.In-process ellipsometric monitoring of diamond film growth by microwave plasma enhaned chemical vapor deposition[J].Appl Phys Lett,1992,60(23):2868-70.
    [35]周健,余卫华,等.微波等离子体化学气相沉积工艺对透明金刚石膜质量的影响[J]。硅酸盐学报,2000,28(5):445.
    [36]曹传宝,等.微波等离子体低温制备金刚石薄膜[J].功能材料,1994,25(6):570.
    [37]莫要武,等.MPCVD法在氧化铝陶瓷上的金刚石膜[J].功能材料,1998,29(1):50.
    [38]Yukio S,et al.Application of diamond films from CO- H_2 plasma to tool blade coating[J].J Mater Sci,1991,26:2937.
    [39]俞世吉,等.基片位置对MPCVD制备金刚石薄膜的影响[J].真空科学与技术,2000,20(3):131.
    [40]Kitahama K,et al.Appl Phys Let t.1986,49(1):634.
    [41]Hiraki A,et al.Preparation and characterization of wide area,high quality diamond film using magetoactive plasma chemical vapour deposition[J].Surf and Coat Tech.,1990,43-44:10.
    [42]Hirose Y,et al.J Appl Phys,1990,68(5):2351.
    [43]黄树涛,等.燃烧法沉积高品质透明金刚石薄膜的研究[J].人工晶体学报,1999,28(1):74.
    [44]Guo H,Sun Z L,He Q Y,et al.Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet[J].Diamond and Related Materials,9(2000):1673-1677.
    [45]L(?) F X,Tang W Z,Zhong G F,et al.Economical deposition of a large area of high quality diamond film by a high power DC arc plasma jet operating in a gas recycling mode[J].Diamond and Related Materials,9(2000):1655-1659.
    [46]钟国仿.大功率直流等离子体喷射金刚石膜大面积高速沉积工艺研究[硕士论文].北京:北京科技大学,1993.
    [47]Vasilev V V,Strelnitskij V E.Investigation of plasma jet gas-dynamic effect on a substrate in conditions of diamond coating synthesis[J].Diamond and Related Materials,1999,8:202.
    [48]Mark A.Aprelas.Handbook of industrial diamond and diamond film[M].Marcel Dekker,1988,ⅩⅡ:58.
    [49]廖克俊,王万录.直流等离子体CVD法合成的金刚石膜的断裂强度研究[J].物理学报,1994,43(9):1559-1563.
    [50]Gray K J,Windischmann H.Free-standing CVD diamond wafers for thermal management by d.c.arc jet technology[J].Diamond and Related Materials,8(1999):903-908.
    [51]L(?) F X,Fu Y L,Zhong G F,et al.Fracture behavior of thick diamond films prepared by DC arc plasma jet method[J].Diamond and Related Materials,7(1998):733-736.
    [52]L(?) F X,Jiang Z,Tang W Z,et al.Accurate measurement of strength and fracture toughness for miniature-size thick diamond-film samples by three-point bending at constant loading rate[J].Diamond and Related Materials,10(2001):770-774.
    [53]杨胶溪,吕反修,毛卫民,等.高质量金刚石自支撑膜织构与断裂强度的关系研究[J].金属热处理,2005,30(6):2-5.
    [54]杨卫正.影响CVD金刚石断裂强度的因素[J].河北省科学院学报,2004,21(4):50-52。
    [55]蒋政.大面积化学气相沉积金刚石自支撑膜的力学性能研究[D].北京科技大学博士论文,2000.
    [56]刘敬明,蒋政,张恒大,等.测试因素对CVD金刚石膜断裂强度的影响[J].理化检验-物理分册,2001,37(6):236-239.
    [57]于映,陈跃.NiCr溅射薄膜内应力的研究[J].真空电子技术,2000,(5):32
    [58]Wilcock J D.Campbell D S,Anderson J C.The internal stress in evaporated silver and gold films[J].Thin Solid Films,1969,(3):13.
    [59]Doljack F A,Hoffman R W.The origins of stress in thin nickel films [J].Thin Solid Films,1972(12):71.
    [60]周志烽,范玉殿.薄膜热应力的研究[J].真空科学与技术,1996,16(5):347-353.
    [61]米谷茂.残余应力的产生和对策[M].北京:机械工业出版社,1983.
    [62]Caswell H L,Priest J,Budy Y.Low-temperature properties of evaporated lead films[J].J Appl Phy,1963,(34):3261.
    [63]Chandra L,Chhowalla M,Amaratungs G A J,et al.Residual stresses and debonding of diamond films on titanium alloy substrates[J].Diamond and Related Materials,5(1996) 674-681.
    [64]Buckel W.Internal stresses[J].J Vac Sci Technol,1969,(6):606.
    [65]Lim S H N,McCulloch D G,Bilek M M M,et al.Minimisation of intrinsic stress in titanium nitride using a cathodic arc with plasma immersion ion implantation[J].Surface and Coatings Technology,174-175(2003):76-80.
    [66]Shang N G,Lee C S,Lin Z D,et al.Intrinsic stress evolution in diamond films prepared in a CH_4-H_2-NH_3 hot filament chemical vapor deposition system[J].Diamond and Related Materials,9(2000):1388-1392.
    [67]Engelstad R L,Feng Z,Lovell E G,et al.Evaluation of intrinsic film stress distributions from induced substrate deformation[J].Microelectronic Engineering,78-79(2005):404-409.
    [68]Diniz A V,Ferreira N G,Corat E J,et al.Micro-Raman spectroscopy for stress analysis on large area diamond/Ti6Al4V electrodes[J].Diamond and Related Materials,13(2004):526-532.
    [69]唐壁玉,靳九成,李绍绿,等.CVD金刚石薄膜的应力研究[J].高压物理学报,1997,11(1):56-60.
    [70]张耀平,张云洞,凌宁,等.薄膜残余应力有限元分析研究[J].激光与光电子学进展,2005,42(10):23-26.
    [71]Zhu W,McCune R C,deVries J E,et al.Investigation of adhesion of diamond films on Mo,W and carburized W substrates[J].Diamond and Related Materials,4(1995):220-233.
    [72]Chandra L,Chhowalla M,Amaratunga G A J,et al.Residual stresses and debonding of diamond films on titanium alloy substrates[J].Diamond and Related Materials,5(1996):674-681.
    [73]Glozman O,Hoffman A.Adhesion improvement of diamond films on steel substract using chromium nitride interlayers[J].Diamond and Related Materials,6(1997):796-801.
    [74]Bernardez B J,McCarty K E Diamond and Related Materials,3(1993):22.
    [75]Fan Qi Hua,Gracio J,Pereira E,et al.Determination of biaxial modulus of chemical vapor-deposited diamond films[J].Thin Solid Films,398 -399(2001):265-269.
    [76]Fu Y,Du H,Sun C Q.Interfacial structure,residual stress and adhesion of diamond coatings deposited on titanium[J].Thin Solid Films,424(2003):107-114.
    [77]Gunnars J,Alahelisten A.Thermal stresses in diamond coatings and their influence on coating wear and failure[J].Surface and Coatings Technology 80(1996) 303-312.
    [78]黄天斌,刘敬明,唐伟忠,等.大面积金刚石膜沉积过程中的热应力分析[J].北京科技大学学报,2000,22(2):153-155.
    [79]刘炯,薛屺,陈楠,等.CVD金刚石涂层中热应力的有限元模拟[J].表面技术,2006,35(6):72-74.
    [80]唐达培,高庆.金刚石膜/硅基体热残余应力场有限元分析[J].人工晶体学报,2007,36(2):377-380.
    [81]唐达培,高庆,吴兰鹰.金刚石膜厚度尺寸对热残余应力的影响[J].高压物理学报,2007,21(3):316-321。
    [82]唐达培,高庆.中间层对金刚石膜-硬质合金残余应力的影响[J].人工晶体学报,2008,37(2):456-460.
    [83]唐达培,高庆。钛过渡层对CVD金刚石膜热残余应力的影响[J].材料热处理学报,2008,29(1):176-179.
    [84]唐达培,高庆,李映辉。金刚石厚膜热残余应力三维模拟及失效分析[J].激光与红外,2008,38(1):81-83.
    [85]张海余,左敦稳,徐锋,等.基于ANSYS的HFCVD金刚石厚膜的热应力分析[J].人工晶体学报,2007,36(1):170-174.
    [86]李树棠.晶体X射线衍射学基础[M].北京:冶金工业出版社,1996.
    [87]Robertson J.Diamond-like amorphous carbon[J].Materials science and Engineering.37(2002):129-281.
    [88]Hempel M,Harting M.Characterisation of CVD grown diamond and its residual stress state[J].Diamond and RelatedMaterials,8(1999):1555-1559.
    [89]Chowdhury S,Laugier M T,Henry J.XRD stress analysis of CVD diamond coatings on SiC substrates[J].International Journal of Refractory Metals & Hard Materials,25(2007):39-45.
    [90]Noyan I C,Cohen J B.Residual Stress,Measurement by Diffraction and Interpretation[M].Springer,New York,1987.
    [91]FlinnP A,Gardner D S,Nix W D.Measurement and interpretation of stress in aluminum-based metallization as a function of thermal history[J]. IEEE Trans Electron Dev,1987, ED34: 689-699.
    [92]Zhang T J, Wong M S, Sproul W D, et al. Characterization of magnetron sputteringTiB2 and Ti-B-N thin films[J].Tran Nonferrous Met Soc China, 2000,10(5):619-624.
    [93]Rossnagel S M, Gilstrap P, Rujkorakarn R. Stress measurement in thin films by geometrical optics[J]. J Vac Sci Technol, 1982, 21(4):1045-1046.
    
    [94] Thomas Keller,NikolausMargadant, Thilo Pirling, et al .Residual stress d etermination in thermally sprayed metallic deposits by neutron diffraction[J]. Materials Science and Engineering A, 2004,A373:33-44 .
    
    [95]Matejicek J , Sampath S, Brand P C, et al . Quenching, thermal and residual stress in plasma sprayed deposits :NiCrAlY and YSZ coating[J]. Acta Mater, 1999, 47 (2): 607- 617.
    
    [96] Killis A, Lenest J F, Gandini A, et al. Solid State Ionics, 1984,14:231.
    [97] Zhu Jiaqi, Han Jiecai, Liu Aiping, et al. Mechanical properties and Raman characterization of amorphous diamond films as a function of film thickness[J]. Surface & Coatings Technology ,201 (2007) :6667-6669.
    [98] Chen K H, Lai Y L, Lin J C, et al. Micro-Raman for diamond film stress analysis [J]. Diamond and Related Materials, 4 (1995):460-463.
    
    [99]Newton R L, Davidson J L, Lance M J. Raman microscopic characterization of proton-irradiated polycrystalline diamond films [J]. Diamond & Related Materials, 14 (2005) 173-178.
    [100] Windischmann H, Epps G F. J. Appl. Phys. 69, 2231 (1991).
    
    [101] W. Wanlu, L. Kejun, G. Jinying, and L. Aimin, Thin Solid Films. 215,174(1992).
    [102] K. H. Chen, Y. L. Lai, J. C. Lin, K. J. Song, C. Chen, and C. Y. Huang, Diamond Related Mater. 4, 460 (1995).
    [103] B. S. Berry, W. C. Pritchet, J. J. Cuomo, and C. R. Guarnieri, Appl. Phys. Lett. 57, 302 (1990).
    [104]Kim J G,Yu Jin.Comparative study of residual stresses measurement methods on CVD diamond films[J].Scripta Materialia,39(1998):807-814.
    [105]方亮,王万录,陈星明,等.用拉曼波谱分析金刚石膜的内应力[J].重庆大学学报(自然科学版),1999,22(5):79-84.
    [106]Ager Ⅲ J W,Drory M D.Quantitative measurement of residual biaxial stress by Raman spectroscopy in diamond grown on a Ti alloy by chemical vapor deposition[J].Phys.Rev.B,1993,48:2601.
    [107]Tardieu A,Cansell F,Petitetj P.Pressure and temperature dependence of the first order Raman mode of diamond[J].J.Appl.Phys.,1990,68:3 243.
    [108]Boppart H,Straatan J V,Silvera I F.Raman spectra of diamond at high pressures[J].Phys.Rev.B,1985,32(2):1423- 1425.
    [109]Yoshikawa M,et al.Characterization of crystalline quality of diamond films by Raman spectroscopy[J].Appl.Phys.Lett.,1989,55:2608.
    [110]匡同春,刘正义.激光拉曼光谱在金刚石薄膜质量表征中的应用[J].理化检验一物理分册,1997,33(7):21-25.
    [111]Dismukes J P,Ravi K V.Diamond materials.The Electrochemical Society,Inc.,1993:821.
    [112]Sails S R,et al.Appl.Phys.Lett.,1994,65:43.
    [113]Johnston C,et al.Diamond and Related Materials,1992,1:450.
    [114]周祖源,陈广超,周有良,等.DC Pl a s ma Jet CVD金刚石自支撑膜体结构的控制生长及其表面粗糙度的研究”[J].人工晶体学报,2005,34(1):21-24.
    [115]Bahr D F,Bucci D V,Schadler L S,et al.Characterization of d.c.jet CVD diamond films on molybdenum[J].Diamond and Related Materials,5(1996):1462-1472.
    [116]Kuo C T,Wu J Y,Lin C H,et al.Internal stresses and microstructures of commercial thick diamond films deposited by different deposition methods[J].Materials Chemistry and Physics 72(2001):114-120.
    [117]Guo H,Alam M.Strain in CVD diamond films:effects of deposition variables[J].Thin Solid Films,1992,212:173.
    [118]Fan Qi Hua,Fernandes A,Pereira E,et al.Evaluation of biaxial stress in diamond film[J].Diamond and Related Materials,8(1999):645-650.
    [119]Wang Wanlu,Liao Kejun,Gao Jinying,et al.Internal stress analysis in diamond films formed by d.c.plasma chemical vapour deposition[J].Thin Solid Films,215(1992)174-178.
    [120]Chiou Y H,Hwang C T,Han M Y,et al.Internal stress of chemical vapor deposition diamond film on silicon[J].Thin Solid Films,253(1993):119-124.
    [121]钟国仿,申发振,唐伟忠,等。基片温度对直流电弧等离子体喷射沉积金刚石膜的影响[J].北京科技大学学报,1999,21(4):353-356.
    [122]过增元,赵文华.电弧和热等离子体[M].北京:科学出版社,1986.1-21.
    [123]国家自然科学基金委员会.等离子体物理学[M].北京:科学出版社,1994。
    [124]吴其芬,等.磁流体力学[M].长沙:国防科技大学出版社,2007.
    [125]陈荣发,左敦稳,李多生,等.直流电弧喷射等离子体炬阳极喷嘴积碳现象的研究[J].航空材料学报,2006,26(1):20-24.
    [126]Lu F X,Zhong G F,Sun J G,et al.A new type of DC arc plasma torch for low cost large area diamond deposition[J].Diamond and Related Materials,1998,7(6):737-741.
    [127]钟国仿.光学级金刚石膜的制备表征及问题研究[D].北京科技大学博士后,2000.
    [128]雷银照.轴对称线圈磁场计算[M].北京:中国计量出版社,1991.
    [129]Karetta F,Lindmayer M.Simulation of the gasdynamic and electromagnetic processes in low voltage switching arcs[J].IEEE Trans Compon Packag Maunf Technol,1998,21(1 ):96-103.
    [130]邹学柏,郭鸿志,赵立合,吕反修,等.高功率直流电弧等离子体流 动传热过程的数值模拟[J].工业加热,2004,33(4):16-18.
    [131]Murphy A B.A comparison of treatments of diffusion in thermal plasmas.Journal of Physics D:Applied Physics,1996,29(3):1922-1932.
    [132]Murphy A B.Transport coefficients of Air,Argon-Air,Nitrogen-Air and Oxygen-Air Plasmas.Plasma Chemistry and Plasma Processing,1995,15(2):297-307.
    [133]Murphy A B.Transport Coefficients of Hydrogen and Argon-Hydrogen Plasmas[J].Plasma Chemistry and Plasma Processing,2000,20(3):279-287.
    [134]韩鹏,陈熙.氩等离子体射流在空气环境中冲击平板层流流动与传热的数值模拟[J].工程热物理学报,1998,19(5):590-595.
    [135]Scott D A,Kovitya P,Haddad G N.Temperature in the plume of a dc plasma torch[J].J.Appl.Phys.,1989,66(11):5232-5239.
    [136]Freton P,Gonzalez J J,Gleizes A,etc.Numerical and experimental study of a plasma cutting torch[J].J.Phys.D:Appl.Phys.2002,35:115-131.
    [137]Bott J F.Spectroscopic measurement of temperature in an argon plasma arc[J].The Physics of Fluids,1966,9(8):1540-1547.
    [138]Giannaris R J,Incropera F P.Nonequilibrium effects in an atmospheric argon arc plasma[J].J.Quant.Spectrosc.Radiat.Transfer,1971,11(2):291-307.
    [137]Bott J F.Spectroscopic measurement of temperature in an argon plasma arc[J].The Physics of Fluids,1966,9(8):1540-1547.
    [138]Giannaris R J,Incropera F P.Nonequilibrium effects in an atmospheric argon arc plasma[J].J.Quant.Spectrosc.Radiat.Transfer,1971,11(2):291-307.
    [139]Delalondre C,Simonin O.Modelling of high intensity arcs including a non-equilibrium description of the cathode sheath[J].Colllque de Physique,1990,51:C5,199-206.
    [140]Zhu Peiyuan,Lowke J J,Morrow R.A unified theory of free burning arcs,cathode sheaths and cathodes[J].J.Phys.D:Appl.Phys.,1992,25:1221-1230.
    [141]Simonin O,Delalondre C,Viollet P L.Modelling in thermal plasma and electric arc column[J].Pure & Applied Chemistry,1992,64(5):623-628.
    [142]Zhu Peiyuan,Lowke J J.Theoretical study of the melting of the cathode tip of a free burning arc in argon for various conical angles[J].J.Phys.D:Appl.Phys.,1993,26:1073-1076.
    [143]Kaddani A,Delalondre C,Simonin O,et al.Thermal and electrical coupling of arc electrodes[J].High Temp.Chem.Processes,1994,3:441-448.
    [144]Zhu Peiyuan,Lowke J J,Morrow R,et al.Prediction of anode temperature of free burning arcs[J].J.Phys.D:Appl.Phys.,1995,28:1369-1376.
    [145]Lowke J J,Morrow R,Haidar J.A simplified unified theory of arcs and their electrodes[J].J.Phys.D:Appl.Phys.,1997,30:2033-2042.
    [146]Cao M,Proulx P,Boulos M I,et al.Mathematical modeling of high-power transferred arcs[J].Journal of Applied Physics,1994,76(12):7757-7767.
    [147]Menart J.Lin Lanchao.Numerical study of high-intensity free-burning arc[J].Journal of Thermophysics and Heat Transfer,1998,12(4):500-506.
    [148]Murphy A B,Kovitya P.Mathematical model and laser-scattering temperature measurements of a direct-current plasma torch discharging into air[J].Journal of Applied Physics,1993,73(10):4759-4769.
    [149]钟国仿.100kW级直流电弧等离子体喷射CVD金刚石膜沉积系统研制及工艺研究[D].北京:北京科技大学博士论文,1998.
    [150]Zhong Guofang,Shen Fazheng,L(?) Fanxiu,Tang Weizhong,et al.Preparation and characterization of high quality diamond films by DC arc plasma jet CVD method[J].Journal of University of Science and Technology Beijing,1999,6(4):281.
    [151]Trelles J P,Heberlein J V R.Simulation results of arc behavior in different plasma spray torches[J].Journal of Thermal Spray Technology,2006,15(4):563.
    [152]Westhoff R,Szekely J.A model of fluid,heat flow,and electromagnetic phenomena in a nontransferred arc plasma torch[J].J.Appl.Phys.,1991,70(7):3455-3466.
    [153]Wenxia Pan,Wenhong Zhang,Wei Ma,et al.Characteristics of Argon Laminar DC Plasma Jet at Atmospheric Pressure[J].Plasma Chemistry and Plasma Processing,2002,22(2):271-283.
    [154]Kai Cheng,Xi Chert,Wenxia Pan.Comparison of Laminar and Turbulent Thermal Plasma Jet Characteristics-- A Modeling Study[J].Plasma Chem Plasma Process(2006) 26:211-235.
    [155]李和平,陈熙.等离子体反应器中传热与流动的三维数值模拟[J].工程热物理学报,2001,22(3):324-327.
    [156]黄天斌,唐伟忠,吕反修,等.大面积金刚石膜生长环境气氛的计算机模拟[J].北京科技大学学报,2000,22(2):156-159.
    [157]李和平.直流电弧等离子体发生器与射流中传热与流动的研究[D].清华大学博士论文,2001:77.
    [158]谢克昌,陈宏刚,田亚竣,等.H_2/Ar等离子体射流反应器的模拟[J].化工学报,2001,52(5):389-395.
    [159]黄天斌.DC ARC PLASMA JET大面积金刚石膜沉积的计算机模拟[D].北京:北京科技大学博士论文,2001.
    [160]张冠忠,谢巍,王俊华。常压下超音速等离子体射流的数值模拟[J].工程力学,2003,20(5):139-143.
    [161]Shipitsina E M.Dynamic behavior of a hollow sphere in thermomechanical shock..Sov.Appl.Mech.,1980,16:1041-1046.
    [162]于建国,叶庆泰,陈超.热冲击下机械结构非线性热力耦合模型的建立[J].应用力学学报,2004,21(4):43-64.
    [163]孔祥谦.热应力有限单元法分析[M].上海:上海交通大学出版社,1999.
    [164]Lindsay K A,Straughan B.Temperature waves in a rigid heat conductor[J].Journal of Applied Mathematics and Physics.1976,27:653-662P.
    [165]Fung Y C.Foundations of solid mechanics[M].Prentice Hall Inc.,1965.
    [166]顾泽同,葛永乐,翁中杰.工程热应力[M].国防工业出版社,1987.
    [167]李维特,黄保海,毕仲波.热应力理论分析及应用[M].北京:中国电力出版社,2004.
    [168]秦太验,周喆,徐春晖.有限单元法[M].北京:中国农业科学技术出版社,2006.
    [169]朱加铭,欧贵宝,何蕴增.有限元与边界元法[M].黑龙江:哈尔滨工程大学出版社,2002.
    [170]张国智,胡仁喜,陈继刚.ANSYS10.0热力学有限元分析实例指导教程[M].北京:机械工业出版社,2007.
    [171]Gunnars J,Alahelisten A.Thermal stresses in diamond coatings and their influence on coating wear and failure[J].Surface and Coatings Technology 80(1996) 303-312.
    [172]Ozel A,UearV,Mimaroglu A.Material and Design,2000,21:437-440.
    [173]Slack G A,Bartram S F.Thermal expansion of some diamond-like crystals[J].J Appl.Phys.,1975,46:89-98
    [174]Fan Q H,Gracio J,Pereira E.Evaluation of residual stresses in chemical-vapor- deposited diamond films[J].J.Appl.Phys,2000,87:2880-2884.
    [175]Tang W,Liu J,Huang T,et al.Preparation of diamond wafers by DC arc jet plasma process under a gas recycling mode[J].Diamond and Related Materials,10(2001):327-331.
    [176]周灵平,李绍禄,李德意,等.刀具表面CVD法金刚石薄膜剥离及其结合性能[J].机械工程材料,2003,27(4):48-50.
    [177]马丙现.CVD金刚石膜的附着性能与应用[D].郑州大学博士论文,2004.
    [178]王传新,汪建华,满卫东,等.钛过渡层与硬质合金基体表面结合状况对金刚石薄膜附着力的影响[J].金刚石与磨料磨具工程,2004,(3):10-13.
    [179]陈冷,张建升,毛卫民.CVD金刚石薄膜的织构与显微组织研究[J].科学技术与工程,2007,7(6):1103-1106.
    [180]张恒大,刘敬明,宋建华,吕反修,唐伟忠.CVD金刚石膜中的缺陷[J].北京科技大学学报,2002,24(4):426-428.
    [181]Li Cheng-ming,Li Hui-qing,Chen Guan-chao,et at.Residual stress distribution in thin diamond films and its effects on preparation of thick freestanding diamond films using DC arc plasma jet operated at gas recycling mode[J].Trans.Nonferrous Met.Soc.China,2004,14(2):255-259.
    [182]Li Chengming,Li Hao,Niu Decao,et al.Effects of residual stress distribution on the cracking of thick freestanding diamond films produced by DC arc jet plasma chemical vapor deposition operated at gas recycling mode.Surface & Coatings Technology 201(2007)6553-6556.
    [183]李明吉.大尺寸高质量金刚石厚膜制备及氮掺杂对金刚石膜生长的影响研究[D].吉林大学博士论文,2006.
    [184]Ager Ⅲ J W,Drory M D.Quantitative Measurement of Residual Biaxial Stress by Raman Spectroscopy in Diamond Grown on A Ti Alloy by Chemical Vapor Deposition[J].Phys.Rev.B,1993,48:2601.
    [185]Yang J X,Li C M,Chen G C,et al.Analysis of Residual Stress Distribution in DC Arc Plasma Jet CVD High Quality Diamond Films by Raman Spectroscopy.Journal of Synthetic Crystals.2004,33(4):674-678.
    [186]Jeong J H,Kwon D.Intrinsic stress in chemical vapor deposited diamond films:An analytical model for the plastic deformation of the Si substrate[J].Journal of Applied Physics,2001,90(3):1227-1236.
    [187]吕反修,唐伟忠,李成明,陈广超,等.大面积光学级金刚石自支撑膜制备、加工及应用[J].功能材料,2004,35(增):117-124.
    [188]钟国仿.100kW级直流电弧等离子体喷射CVD金刚石膜沉积系统研制及工艺研究[D].北京科技大学博士论文,1998.
    [189]熊礼威,汪建华,满卫东,等.化学气相沉积光学级金刚石薄膜的研究进展[J].激光与光电子学进展,2006,43(7).
    [190]博弈创作室.ANSYS9.0经典产品高级分析技术与实例详解[M].北京:中国水利水电出版社,2005,364-392.
    [191]Nasar Ali,Qi Hua Fan,Gracio J,Pereira E.A comparison study of diamond adhesion on ductile metals[J].Thin Solid Film,2000,377-378:193-197.
    [192]Vedawas M,Sivananthan G,Ashok Kumar.Textured polycrystalline diamond films on Cu metal substrates by hot filament chemical vapor deposition[J].Materials Science and Engineering,2000,B78:16-21.
    [193]王天旭,蒙继龙,文命清.化学气相沉积金刚石薄膜衬底的研究进展[J].金属热处理,2002,27(9):16-18.
    [194]方莉俐.CVD金刚石薄膜基体材料的选择[J].金刚石与磨料磨具工程,2004,(3):50-51.
    [195]唐伟忠.薄膜材料制备原理、技术及应用[M].北京:冶金工业出版社,2003.217-221.
    [196]满卫东,汪建华,王传新,等.金刚石薄膜的性质、制备及应用[J].新型炭材料,2002,17(1):62-69.
    [197]Nakamura Y,et al.Measurement of Internal Stress in CVD Diamond Films[J].Thin Solid Films,1997,308-309:249-253.
    [198]Kim J G,Jin Yu.Characterisation of CVD Grown Diamond and Its Residual Stress State[J].Materials Science and Engineering,1998,B57:24-27.
    [199]马丙现,姚 宁,贾 瑜,等.金刚石薄膜的结构特征对薄膜附着性能的影响[J].物理学报,2005,54(6):2853-2858.
    [200]马志斌,汪建华,万美珍,等.铜植入层对硬质合金上金刚石薄膜附着力的影响[J].武汉化工学院学报,2000,22(4):34-36.
    [201]黄扬风,马志斌,汪建华.硬质合金上采用Cu和Cu/Ti过渡层沉 积金刚石薄膜的形核分析[J].工具技术,2003,37(1):28-30.
    [202]黎向锋,左敦稳,王珉.通过过渡层改善金刚石膜和基底间的结合性能[J].材料开发与应用,2000,15(1):35-39.
    [203]Li Huiqing,Li Chengming,Chen Guangchao.Growth of free-standing diamond film on graphite substrates with Ti interlayers [J].Transactions of Materials and Heat Treatment,2004,25(5):899-901.
    [204]师昌绪.材料科学与工程手册(上)[M].化学工业出版社,2004.

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