InAs/In_xGa_(1-x)Sb应变超晶格界面结构和光学性能
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摘要
InAs/In_xGa_(1-x)Sb应变超晶格被认为是最有潜质应用于8~14μm长远波段红外探测的材料。外延生长异质薄膜材料不可避免的涉及到不同材料所形成的界面层。物理性质和器件性能的优劣很大程度上取决于界面结构和成分。分子束外延(MBE)能够实现原子量级浮动和化学成分突变的异质界面。其中有两个主要因素导致界面失序:一是由于台阶和岛的形成导致界面粗糙;二是界面原子交换,其中包括在界面处成分的改变。因此界面失序最终将通过载流子在界面处的传递效应和散射机制影响器件的光电特性,同时导致带阶偏离本征值。影响界面质量的主要因素包括生长参数、衬底取向、过渡层特性、生长温度和应变缓解等。本文通过双晶x射线衍射,红外光谱和光致发光谱表征、分析了超晶格的结构质量和光学性能。
文中通过高分辨透射电镜(HRTEM)对InAs/In_xGa_(1-x)Sb超晶格的界面结构进行了深入研究。并使用实验获得的高分辨电镜像与InAs和In_xGa_(1-x)Sb相应的原子格点像相匹配,确定超晶格界面成分。研究发现,In_xGa1?xAs型界面主要是通过调节原子位置的方式来缓解晶格失配。而InSb型界面缓解晶格失配主要机制是产生失配位错。对具有GaAs/In_xGa_(1-x)As型界面的InAs/In_xGa_(1-x) Sb超晶格的界面结构进行了分析。通过对界面原子排列的分析,界面化学键构型的讨论,结果表明电荷平衡原理是界面形成首要遵从的原则。In_xGa_(1-x)As型界面的结构特征是通过面间距调制释放晶格失配。而GaAs型界面的形貌特征是界面附近存在失配位错,同时在界面附近伴随着化学成分的波动。
通过原子尺度测量面间距的方法研究了InAs/In_xGa_(1-x)Sb超晶格合金层中In含量。在无应变状态下测量了[001],[110]和[111]方向上的晶格间距,并计算其平均晶格常数。结果表明InAs层的理论值和实验值相差无几。我们所计算的In_(0.25)Ga_(0.75)Sb合金层的平均晶格常数结合Vegard规则,获得的In含量为0.18,与x射线衍射结果一致。
文中阐明了如何通过HRTEM像在原子尺度范围内对InAs/In_xGa_(1-x)Sb界面键合特征进行分析,从而推测异质结中界面结构、界面成分和生长条件之间的关系。并结合实验观测结果应用动力学多层法理论对InAs/In_xGa_(1-x)Sb超晶格中InSb型和In_xGa_(1-x)As型两种界面类型的高分辨像进行模拟计算,分析了近界面处像衬度对高分辨像中格点之间面间距的影响。
本文对长远波段红外光电薄膜材料InAs/In_xGa_(1-x)Sb应变超晶格的显微结构进行了深入分析,并揭示界面结构与制备工艺之间的关系及其物理本质,在“带隙工程”基础上进一步分析显微结构与光学性能之间的内在关系,为长远波段红外探测光电薄膜材料达到优异的光学性能奠定基础。
InAs/In_xGa_(1-x)Sb strained layer superlattices have shown considerable promise as candidates for application in infrared detectors, particularly at wavelengths of 8~14μm. The epitaxial growth of thin film heterostructures inevitably involves the formation of interfaces between layers of different materials. Both physical properties and device performance are crucially dependent on the interface structure and composition. The growth by Molecular beam epitaxy (MBE) enables the realization and control of atomically flat and chemically abrupt heterointerfaces. These are two major contributions to interfacial disorder: interfacial roughness due to the formation of steps and islands, and interfacial intermixing that comprises the changes in composition across the interface. Such interfacial disorder can ultimately impact the electrical and optical device characteristics by affecting transport and scattering mechanisms of carriers local deviations in the band offsets.The quality of interfaces depends on numerous growth parameters, substrate misorientation, properties of buffer layer, growth temperature and strain relaxation. This study was characterized quantify the structural properties of SL, and displayed optical properties by HRXRD, FTIR and PL.
The interfacial structure of InAs/In_xGa1?xSb superlattices is investigated by high-resolution transmission electron microscopy (HRTEM). We have shown that high-resolution electron microscopy with quantitative image matching can enable the relative orientation of the closely separated atomic species in InAs and In_xGa1?xSb to be resolved. We have then used this capability to determine interfacial composition. The shift in the atomic positions associated with this modulation may lead to distortions of the interfacial structure of In_xGa1?xAs-like. The misfit dislocations in InSb-like interface are the primary mechanism for accommodating the lattice mismatch. The lattice structure of the InAs/In_xGa_(1-x)Sb with GaAs/In_xGa_(1-x)As-like interfaces has been studied. The atomic arrangement at the plane of the interface is analyzed based on the image characteristics. Possible bonding configurations are discussed. The results suggest that interface formation is first driven by charge balance. The shift of the interplanar separations associated with this modulation may lead to distortions of the interfacial structure of In_xGa_(1-x) As-like. The morphological characterization at GaAs-like interface is accompanied by interface misfit dislocations and compositional fluctuations near the interface.
Atomic scale positional resolved lattice spacing measurement is used to study the In concentration of alloy layer in InAs/In_xGa_(1-x)Sb superlattices. The unstrained lattice distance along three of [001], [110] and [111] directions were measured and calculated the average lattice constant. The experimental lattice constants of InAs layers are almost equal to the theoretical ones. We have calculated the average lattice constant of In_(0.25)Ga_(0.75)Sb alloy layers is in good agreement with previously reported Vegard’s values. The results indicate that the In concentration of 0.18 has a same compared with the XRD values.
The paper have shown how cross-sectional HRTEM can be used to characterize the lattice-mismatched bonding across the InAs/In_xGa_(1-x)Sb interfaces with atomic scale precision, and described how such measurements advance our understanding of the connection between interfacial structure, interfacial composition, and the growth conditions used to form these complex hetero- structures. The interface type of InSb-like and In_xGa_(1-x)As-like interface at InAs/In_xGa_(1-x)Sb SLs was simulated based on kinetic theory of multi-method with the experimental micrographs. The atomic imaging across the interface on the impact of lattice spacing of high-resolution image was analyzed.
This paper analyzes the microstructure characterization of InAs/In_xGa_(1-x)Sb strained layer superlattices adapted for long wavelength and very long wavelength infrared photovoltaic thin film, and report on the physical nature and the relationship between interfacial structure and preparation technique. The connection between microstructure and optoeletronic performance has been analyzed based on“the band gap engineering”theoretical. Thus, the material system of the photovoltaic thin film is more attractive in achieving high performance infrared detectors for long wavelength and very long wavelength applications.
文中通过高分辨透射电镜(HRTEM)对InAs/In_xGa_(1-x)Sb超晶格的界面结构进行了深入研究。并使用实验获得的高分辨电镜像与InAs和In_xGa_(1-x)Sb相应的原子格点像相匹配,确定超晶格界面成分。研究发现,In_xGa1?xAs型界面主要是通过调节原子位置的方式来缓解晶格失配。而InSb型界面缓解晶格失配主要机制是产生失配位错。对具有GaAs/In_xGa_(1-x)As型界面的InAs/In_xGa_(1-x) Sb超晶格的界面结构进行了分析。通过对界面原子排列的分析,界面化学键构型的讨论,结果表明电荷平衡原理是界面形成首要遵从的原则。In_xGa_(1-x)As型界面的结构特征是通过面间距调制释放晶格失配。而GaAs型界面的形貌特征是界面附近存在失配位错,同时在界面附近伴随着化学成分的波动。
通过原子尺度测量面间距的方法研究了InAs/In_xGa_(1-x)Sb超晶格合金层中In含量。在无应变状态下测量了[001],[110]和[111]方向上的晶格间距,并计算其平均晶格常数。结果表明InAs层的理论值和实验值相差无几。我们所计算的In_(0.25)Ga_(0.75)Sb合金层的平均晶格常数结合Vegard规则,获得的In含量为0.18,与x射线衍射结果一致。
文中阐明了如何通过HRTEM像在原子尺度范围内对InAs/In_xGa_(1-x)Sb界面键合特征进行分析,从而推测异质结中界面结构、界面成分和生长条件之间的关系。并结合实验观测结果应用动力学多层法理论对InAs/In_xGa_(1-x)Sb超晶格中InSb型和In_xGa_(1-x)As型两种界面类型的高分辨像进行模拟计算,分析了近界面处像衬度对高分辨像中格点之间面间距的影响。
本文对长远波段红外光电薄膜材料InAs/In_xGa_(1-x)Sb应变超晶格的显微结构进行了深入分析,并揭示界面结构与制备工艺之间的关系及其物理本质,在“带隙工程”基础上进一步分析显微结构与光学性能之间的内在关系,为长远波段红外探测光电薄膜材料达到优异的光学性能奠定基础。
InAs/In_xGa_(1-x)Sb strained layer superlattices have shown considerable promise as candidates for application in infrared detectors, particularly at wavelengths of 8~14μm. The epitaxial growth of thin film heterostructures inevitably involves the formation of interfaces between layers of different materials. Both physical properties and device performance are crucially dependent on the interface structure and composition. The growth by Molecular beam epitaxy (MBE) enables the realization and control of atomically flat and chemically abrupt heterointerfaces. These are two major contributions to interfacial disorder: interfacial roughness due to the formation of steps and islands, and interfacial intermixing that comprises the changes in composition across the interface. Such interfacial disorder can ultimately impact the electrical and optical device characteristics by affecting transport and scattering mechanisms of carriers local deviations in the band offsets.The quality of interfaces depends on numerous growth parameters, substrate misorientation, properties of buffer layer, growth temperature and strain relaxation. This study was characterized quantify the structural properties of SL, and displayed optical properties by HRXRD, FTIR and PL.
The interfacial structure of InAs/In_xGa1?xSb superlattices is investigated by high-resolution transmission electron microscopy (HRTEM). We have shown that high-resolution electron microscopy with quantitative image matching can enable the relative orientation of the closely separated atomic species in InAs and In_xGa1?xSb to be resolved. We have then used this capability to determine interfacial composition. The shift in the atomic positions associated with this modulation may lead to distortions of the interfacial structure of In_xGa1?xAs-like. The misfit dislocations in InSb-like interface are the primary mechanism for accommodating the lattice mismatch. The lattice structure of the InAs/In_xGa_(1-x)Sb with GaAs/In_xGa_(1-x)As-like interfaces has been studied. The atomic arrangement at the plane of the interface is analyzed based on the image characteristics. Possible bonding configurations are discussed. The results suggest that interface formation is first driven by charge balance. The shift of the interplanar separations associated with this modulation may lead to distortions of the interfacial structure of In_xGa_(1-x) As-like. The morphological characterization at GaAs-like interface is accompanied by interface misfit dislocations and compositional fluctuations near the interface.
Atomic scale positional resolved lattice spacing measurement is used to study the In concentration of alloy layer in InAs/In_xGa_(1-x)Sb superlattices. The unstrained lattice distance along three of [001], [110] and [111] directions were measured and calculated the average lattice constant. The experimental lattice constants of InAs layers are almost equal to the theoretical ones. We have calculated the average lattice constant of In_(0.25)Ga_(0.75)Sb alloy layers is in good agreement with previously reported Vegard’s values. The results indicate that the In concentration of 0.18 has a same compared with the XRD values.
The paper have shown how cross-sectional HRTEM can be used to characterize the lattice-mismatched bonding across the InAs/In_xGa_(1-x)Sb interfaces with atomic scale precision, and described how such measurements advance our understanding of the connection between interfacial structure, interfacial composition, and the growth conditions used to form these complex hetero- structures. The interface type of InSb-like and In_xGa_(1-x)As-like interface at InAs/In_xGa_(1-x)Sb SLs was simulated based on kinetic theory of multi-method with the experimental micrographs. The atomic imaging across the interface on the impact of lattice spacing of high-resolution image was analyzed.
This paper analyzes the microstructure characterization of InAs/In_xGa_(1-x)Sb strained layer superlattices adapted for long wavelength and very long wavelength infrared photovoltaic thin film, and report on the physical nature and the relationship between interfacial structure and preparation technique. The connection between microstructure and optoeletronic performance has been analyzed based on“the band gap engineering”theoretical. Thus, the material system of the photovoltaic thin film is more attractive in achieving high performance infrared detectors for long wavelength and very long wavelength applications.
引文
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