高g值加速度计及其检测电路的设计
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摘要
高量程、耐冲击的高g值硅微加速度计在导航、国防、冲击测量等领域具有重要的应用背景。与常规的低量程加速度计不同,高g值加速度计的设计和封装存在许多难题,有必要进行深入的研究。
本文在对各种硅微传感器特点进行比较的基础上,结合现有的工艺条件,选择了适用于高冲击环境、有较高抗过载性能的扭摆电容式加速度计作为研究对象。对其工作原理和数学模型进行了阐述和研究。综合考虑了高g值加速度计的功能参数后,设计计算了加速度计的结构尺寸。并且利用有限元的分析方法,对计算得到的高g值加速度计进行了静力学和动力学的仿真,以验证该结构的量程和抗高过载能力。阻尼特性是加速度计的另一项重要指标,本文采用理论分析的方法,通过阻尼孔给加速度计设计了合理的阻尼器。结构确定以后,又考虑了该结构的工艺流程,并绘制版图、投片制造。本文最后又给出了该加速度计微小电容的检测电路,初步搭建了测试平台。
High g shock accelerometer can be used in many fields, such as navigation, national defense, shock environment measurement and so on. To be different with common low g accelerometer, the design and process of high g accelerometer will be more challengeable. It is necessary for us to make a profound research.
After a brief introduction and comparison about series types of existing high g accelerometer, considering the current MEMS micro-fabricated process technics, torsional capacitance accelerometer is selected to meet the high g shock environment. First of all, its principle and mathematics modal are discussed. Depending on the functional guideline, the optimized structure parameters are selected. After that, Finite element method is used to simulate the high g accelerometer's behavior, both static analysis and dynamic analysis, and to validate the sensitive structure's surviving ability under over loading acceleration. The squeeze film damping is another influential complication. After the theoretical damping analysis of the sensitive structure, the proper damper has been choiced through damping holes on the mass. After the micro-fabricated process flow of the torsional capacitance accelerometer is confirmed, professional software L-Edit is used to design the marks and layouts. The sensitive structure of accelerometer has been produced in our lab. In the last chapter, a micro-capacitance read-out circuit is designed for the calibration of the current accelerometer.
本文在对各种硅微传感器特点进行比较的基础上,结合现有的工艺条件,选择了适用于高冲击环境、有较高抗过载性能的扭摆电容式加速度计作为研究对象。对其工作原理和数学模型进行了阐述和研究。综合考虑了高g值加速度计的功能参数后,设计计算了加速度计的结构尺寸。并且利用有限元的分析方法,对计算得到的高g值加速度计进行了静力学和动力学的仿真,以验证该结构的量程和抗高过载能力。阻尼特性是加速度计的另一项重要指标,本文采用理论分析的方法,通过阻尼孔给加速度计设计了合理的阻尼器。结构确定以后,又考虑了该结构的工艺流程,并绘制版图、投片制造。本文最后又给出了该加速度计微小电容的检测电路,初步搭建了测试平台。
High g shock accelerometer can be used in many fields, such as navigation, national defense, shock environment measurement and so on. To be different with common low g accelerometer, the design and process of high g accelerometer will be more challengeable. It is necessary for us to make a profound research.
After a brief introduction and comparison about series types of existing high g accelerometer, considering the current MEMS micro-fabricated process technics, torsional capacitance accelerometer is selected to meet the high g shock environment. First of all, its principle and mathematics modal are discussed. Depending on the functional guideline, the optimized structure parameters are selected. After that, Finite element method is used to simulate the high g accelerometer's behavior, both static analysis and dynamic analysis, and to validate the sensitive structure's surviving ability under over loading acceleration. The squeeze film damping is another influential complication. After the theoretical damping analysis of the sensitive structure, the proper damper has been choiced through damping holes on the mass. After the micro-fabricated process flow of the torsional capacitance accelerometer is confirmed, professional software L-Edit is used to design the marks and layouts. The sensitive structure of accelerometer has been produced in our lab. In the last chapter, a micro-capacitance read-out circuit is designed for the calibration of the current accelerometer.
引文
[1]董景新等著,《微惯性仪表——微机械加速度计》,清华大学出版社,2003
[2]L.M.Roglance and J .B.Angell, A batch-fabricated silicon accelerometer, IEEE Trans. Electron Devices, E D-26, 1979, 19 11-1917
[3]许国祯.硅微结构惯性传感器的研制现状及应用前景[J].中国惯性技术学报,1998,6(1):59-67
[4] Patrick L. Walter, Texas Christian University, The History of the Accelerometer, Sound and vibration, January, 2007
[5] Srikar V, Senturia S. Reliability of micro-electro mechanical systems (MEMS) in shock environments. Microelect romech Syst ,2002 ,11 :206
[6] Peitao Dong, Xuezhong Wu, Shengyi Li, A High-Performance Monolithic Triaxial High-G Accelerometer, IEEE SENSORS 2007 Conference
[7] Zuankai Wang, Denggang Zong, Deren Lu et al, A silicon micromachined shock accelerometer with twin-mass-plate structure, Sensors and Actuators A 107 (2003) 50–56
[8] Kebin Fan, Lufeng Che, Bin Xiong and YuelinWang, A silicon micromachined high-shock accelerometer with a bonded hinge structure, Journal of micromechanics and microengineering, Vol. 75, 2004, pp. 4554-4557
[9]余尚江,李科杰,高g值高频响微机械加速度计研究,探测与控制学报, Vol. 27, No.5
[10]赵玉龙,赵立波,蒋庄德,基与SOI技术梁膜结合高过载压阻式加速度计研究,传感技术学报, Vol. 19, No.5
[11] O.Brand,G.K.FEDDER,《CMOS MEMS技术与运用》,东南大学出版社,2006
[12]Todd Christenson, Failure analysis of Endevco 7270A high G accelerometer, Sandia Internal Report
[13] Awn Beliveau, Guy Spencer, Keith Thomas,Evaluation of MEMS Capacitive Accelerometers. IEEE Design & Test of Computers, 1999
[14]Brady Davies, Stephen Montague, SAND 98-0510,High-G Accelerometer for Earth-Penetrator Weapons Applications LDRD Final Report.SAND9 8-0510
[15] Weinberg, Marc.Bemstein, Jonathan, etc; Micromachining inertial instruments,Proc. SPIE Vol. 2879, p. 26-36, Micromachining and Microfabrication Process Technology II
[16]B.S.Davis1,Denison,Kaung, A Monolithic High-g SOI-MEMS Accelerometer for Measuring Projectile Launch and Flight Accelerations,Proceedings of the third IEEE International Conference on Sensors,2004
[17] Anthony S. Chu, Problems in High-Shock Measurement,Endevco Corporation Technical Paper
[18]任文敏,陈艳秋,范钦珊著,《材料力学》,清华大学出版社,2004
[19]PCB Piezotronics Inc.,Series 3991 and 3993 MEMS high amplitude shockaccelerometers datasheet;
[20]徐泰然著,《MEMS和微系统—设计与制造》,机械工业出版社,2004
[21]张文明,孟光,周健斌,微机电系统压膜阻尼特性分析,振动与冲击,Vol.25, No.4, 2006
[22]普朗特等著,郭永怀等译,《流体力学概论》,北京:科学出版社,1981
[23]毛盘松,陈德英,微硅型扭摆式加速度计动态分析,微电子学,Vol.27, No.6
[24] ANSYS帮助10.0版
[25]刘国庆,扬庆东,《ANSYS工程应用教程》,中国铁道出版社,北京,2002
[26]刘国庆,杨庆东,《ANSYS工程应用教程——机械篇》,中国铁道出版社: 2003
[27]孙润等编著,《TANNER集成电路设计教程》,北京希望电子出版社,2002
[28]尹韬,杨海钢,MEMS高精度电容读出电路的单芯片集成研究,电子器件,2007年8月,vol4 ;
[29]Wu Jiangfeng , Sensing and Control Electronics for Low Mass Low Capacitance MEMS Accelerometers[D] . Doctoral Dissertation , Carnegie Mellon University , 2002
[30] Enz C and Temes G C. Circuit Techniques for Reducing the Effects of op-amp Imperfections: Autozeroing, Correlated Double Sampling, and Chopper Stabilization . Proc. IEEE, Nov. 1996,84 :158421614.
[31] Külah H, Chae J, Yazdi N, et al . Noise Analysis and Chara-terization of a Sigma-Delta Capacitive Microaccelerometer. IEEE Solid State Circuits, Feb. 2006 ,41 (2) :3522361
[32] Rodjegard H,Loof.A Differential Charge-Transfer Read-out Circuit for Multiple Output Capacitive Sensors [J] . Sensors and Actuators , A119 , 2005 :3092315
[33]孙余凯,项绮明等,《精选实用电子电路260例》,电子工业出版社,2007
[34]刘刚,彭荣群编著,《Protel DXP 2004 SP2原理图与PCB设计》,电子工业出版社,2007
[2]L.M.Roglance and J .B.Angell, A batch-fabricated silicon accelerometer, IEEE Trans. Electron Devices, E D-26, 1979, 19 11-1917
[3]许国祯.硅微结构惯性传感器的研制现状及应用前景[J].中国惯性技术学报,1998,6(1):59-67
[4] Patrick L. Walter, Texas Christian University, The History of the Accelerometer, Sound and vibration, January, 2007
[5] Srikar V, Senturia S. Reliability of micro-electro mechanical systems (MEMS) in shock environments. Microelect romech Syst ,2002 ,11 :206
[6] Peitao Dong, Xuezhong Wu, Shengyi Li, A High-Performance Monolithic Triaxial High-G Accelerometer, IEEE SENSORS 2007 Conference
[7] Zuankai Wang, Denggang Zong, Deren Lu et al, A silicon micromachined shock accelerometer with twin-mass-plate structure, Sensors and Actuators A 107 (2003) 50–56
[8] Kebin Fan, Lufeng Che, Bin Xiong and YuelinWang, A silicon micromachined high-shock accelerometer with a bonded hinge structure, Journal of micromechanics and microengineering, Vol. 75, 2004, pp. 4554-4557
[9]余尚江,李科杰,高g值高频响微机械加速度计研究,探测与控制学报, Vol. 27, No.5
[10]赵玉龙,赵立波,蒋庄德,基与SOI技术梁膜结合高过载压阻式加速度计研究,传感技术学报, Vol. 19, No.5
[11] O.Brand,G.K.FEDDER,《CMOS MEMS技术与运用》,东南大学出版社,2006
[12]Todd Christenson, Failure analysis of Endevco 7270A high G accelerometer, Sandia Internal Report
[13] Awn Beliveau, Guy Spencer, Keith Thomas,Evaluation of MEMS Capacitive Accelerometers. IEEE Design & Test of Computers, 1999
[14]Brady Davies, Stephen Montague, SAND 98-0510,High-G Accelerometer for Earth-Penetrator Weapons Applications LDRD Final Report.SAND9 8-0510
[15] Weinberg, Marc.Bemstein, Jonathan, etc; Micromachining inertial instruments,Proc. SPIE Vol. 2879, p. 26-36, Micromachining and Microfabrication Process Technology II
[16]B.S.Davis1,Denison,Kaung, A Monolithic High-g SOI-MEMS Accelerometer for Measuring Projectile Launch and Flight Accelerations,Proceedings of the third IEEE International Conference on Sensors,2004
[17] Anthony S. Chu, Problems in High-Shock Measurement,Endevco Corporation Technical Paper
[18]任文敏,陈艳秋,范钦珊著,《材料力学》,清华大学出版社,2004
[19]PCB Piezotronics Inc.,Series 3991 and 3993 MEMS high amplitude shockaccelerometers datasheet;
[20]徐泰然著,《MEMS和微系统—设计与制造》,机械工业出版社,2004
[21]张文明,孟光,周健斌,微机电系统压膜阻尼特性分析,振动与冲击,Vol.25, No.4, 2006
[22]普朗特等著,郭永怀等译,《流体力学概论》,北京:科学出版社,1981
[23]毛盘松,陈德英,微硅型扭摆式加速度计动态分析,微电子学,Vol.27, No.6
[24] ANSYS帮助10.0版
[25]刘国庆,扬庆东,《ANSYS工程应用教程》,中国铁道出版社,北京,2002
[26]刘国庆,杨庆东,《ANSYS工程应用教程——机械篇》,中国铁道出版社: 2003
[27]孙润等编著,《TANNER集成电路设计教程》,北京希望电子出版社,2002
[28]尹韬,杨海钢,MEMS高精度电容读出电路的单芯片集成研究,电子器件,2007年8月,vol4 ;
[29]Wu Jiangfeng , Sensing and Control Electronics for Low Mass Low Capacitance MEMS Accelerometers[D] . Doctoral Dissertation , Carnegie Mellon University , 2002
[30] Enz C and Temes G C. Circuit Techniques for Reducing the Effects of op-amp Imperfections: Autozeroing, Correlated Double Sampling, and Chopper Stabilization . Proc. IEEE, Nov. 1996,84 :158421614.
[31] Külah H, Chae J, Yazdi N, et al . Noise Analysis and Chara-terization of a Sigma-Delta Capacitive Microaccelerometer. IEEE Solid State Circuits, Feb. 2006 ,41 (2) :3522361
[32] Rodjegard H,Loof.A Differential Charge-Transfer Read-out Circuit for Multiple Output Capacitive Sensors [J] . Sensors and Actuators , A119 , 2005 :3092315
[33]孙余凯,项绮明等,《精选实用电子电路260例》,电子工业出版社,2007
[34]刘刚,彭荣群编著,《Protel DXP 2004 SP2原理图与PCB设计》,电子工业出版社,2007