铪基高介电常数栅介质薄膜的制备及其物性研究
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摘要
随着半导体技术的日新月异,MOSFET的特征尺寸不断缩小,栅介质等效氧化物层厚度已缩小至纳米量级,这时电子的直接隧穿效应加剧,严重影响器件的稳定性和可靠性,因此需要寻找新型high-k栅介质材料来替代传统的SiO2栅极材料。通过对物性的综合分析,我们选取了具有高化学稳定性和中等介电常数的铪基高介电栅介质薄膜为研究对象,围绕新栅极材料的结构稳定性、缺陷评价、界面结构及提高晶化温度等关键问题进行超薄膜材料制备方法和微结构的探索。本论文的主要研究内容和创新点如下:
1.研制了一台直流和射频磁控溅射相结合的多功能等离子体化学气相淀积设备,发展了掺N技术和Al_2O_3-HfO_2复合薄膜的制备技术,在衬底上合成了多种Hf基高介电超薄膜体系,为研究上述关键问题奠定了材料基础。
2.发现了N掺杂有利于提高薄膜的晶化温度、抑制界面层生长、减少缺陷的作用,还可以利用N掺杂来调控HfO_2薄膜的能隙。
3.利用磁控溅射法获得了HfO_2-Al_2O_3层状复合栅介电薄膜,研究表明Al_2O_3复合有效提高了薄膜的晶化温度、FTIR测试结果表明经过1000℃退火的纯HfO_2薄膜和Si衬底之间的界面出现较强的Si-O键的红外吸收峰,而同等条件下Al_2O_3复合的薄膜该峰的强度明显下降,这表明HfO_2-Al_2O_3复合栅介电薄膜能较有效地抑制界面中Si-O键的生成,提高了界面热稳定性。
4.通过对不同衬底温度下HfOxNy超薄膜相关物性的研究,找出了抑制界面层生长、减少界面层缺陷最佳衬底温度范围。
上述这些结果都为未来选择HfOxNy和HfO_2-Al_2O_3作为栅介质材料提供了可靠的借鉴依据。
With the continuous development of semiconductor technology, the feature size of MOSFET devices is scaling down rapidly. Especially when the thickness of equivalent oxide of MOSFET is down to nanometer magnitude, the electron tunneling is becoming serious enough to endanger the stability and reliability of devices. It is an urgent task now to seek novel high k dielectrics to substitute the traditional SiO2 gate dielectric in microelectronic industry. Based on the analysis of physical properties, we select Hf-based high k gate dielectric thin films as the candidate materials due to its medium dielectric constant and good chemical stability. Some important issues, such as structural stability, assessment of defects, interfacial structure and increasing the crystallization temperature of the new gate dielectrics, have been investigated in this dissertation. The main research results and originalities of the thesis are as follows.
1. We designed and set up a multifunctional deposition system of direct current (DC) and radio-frequency (RF) magnetron sputtering, and developed an incorporating N technology. A series of Hf based high k gate dielectrics and Al_2O_3-HfO_2 laminate thin films were prepared successfully through these technologies which establish the materials foundation for study the important issues mentioned above.
2. We found that incorporating N into HfO_2 thin films in favor of increasing the crystallization temperature of HfO_2 thin films, suppressing the interfacial layer growth, and reducing defects of the films. Using N incorporated technology, the band gap of HfO_2 thin films can also been modulated.
3. HfO_2-Al_2O_3 nanolaminate films have been obtained by magnetron sputtering. It has been found that adding Al_2O_3 to HfO_2 thin films increase the crystallization temperature of HfO_2 thin films effectively. FTIR analysis shows that relatively strong Si-O bond vibration pecks have been observed between the pure HfO_2 thin films and the Si substrate after the HfO_2 thin films were annealed at 1000 oC, while adding Al_2O_3 to HfO_2 thin films at the same annealing condition, the intensity of the Si-O peaks decreased obviously. The results indicate that HfO_2-Al_2O_3 thin films suppress Si-O bond growth at the interfacial layers effectively, and increase the thermal stability of interfacial layer.
4. Through the analysis of the characteristics of HfOxNy thin films deposited at different substrate temperatures, we obtained the optimal temperature range to suppress interfacial layer growth, and to decrease defects of interfacial layer between the high k gate dielectric thin films and Si substrate.
These studies are valuable for selection and optimization of HfOxNy and HfO_2-Al_2O_3 thin films as gate dielectrics in the future.
1.研制了一台直流和射频磁控溅射相结合的多功能等离子体化学气相淀积设备,发展了掺N技术和Al_2O_3-HfO_2复合薄膜的制备技术,在衬底上合成了多种Hf基高介电超薄膜体系,为研究上述关键问题奠定了材料基础。
2.发现了N掺杂有利于提高薄膜的晶化温度、抑制界面层生长、减少缺陷的作用,还可以利用N掺杂来调控HfO_2薄膜的能隙。
3.利用磁控溅射法获得了HfO_2-Al_2O_3层状复合栅介电薄膜,研究表明Al_2O_3复合有效提高了薄膜的晶化温度、FTIR测试结果表明经过1000℃退火的纯HfO_2薄膜和Si衬底之间的界面出现较强的Si-O键的红外吸收峰,而同等条件下Al_2O_3复合的薄膜该峰的强度明显下降,这表明HfO_2-Al_2O_3复合栅介电薄膜能较有效地抑制界面中Si-O键的生成,提高了界面热稳定性。
4.通过对不同衬底温度下HfOxNy超薄膜相关物性的研究,找出了抑制界面层生长、减少界面层缺陷最佳衬底温度范围。
上述这些结果都为未来选择HfOxNy和HfO_2-Al_2O_3作为栅介质材料提供了可靠的借鉴依据。
With the continuous development of semiconductor technology, the feature size of MOSFET devices is scaling down rapidly. Especially when the thickness of equivalent oxide of MOSFET is down to nanometer magnitude, the electron tunneling is becoming serious enough to endanger the stability and reliability of devices. It is an urgent task now to seek novel high k dielectrics to substitute the traditional SiO2 gate dielectric in microelectronic industry. Based on the analysis of physical properties, we select Hf-based high k gate dielectric thin films as the candidate materials due to its medium dielectric constant and good chemical stability. Some important issues, such as structural stability, assessment of defects, interfacial structure and increasing the crystallization temperature of the new gate dielectrics, have been investigated in this dissertation. The main research results and originalities of the thesis are as follows.
1. We designed and set up a multifunctional deposition system of direct current (DC) and radio-frequency (RF) magnetron sputtering, and developed an incorporating N technology. A series of Hf based high k gate dielectrics and Al_2O_3-HfO_2 laminate thin films were prepared successfully through these technologies which establish the materials foundation for study the important issues mentioned above.
2. We found that incorporating N into HfO_2 thin films in favor of increasing the crystallization temperature of HfO_2 thin films, suppressing the interfacial layer growth, and reducing defects of the films. Using N incorporated technology, the band gap of HfO_2 thin films can also been modulated.
3. HfO_2-Al_2O_3 nanolaminate films have been obtained by magnetron sputtering. It has been found that adding Al_2O_3 to HfO_2 thin films increase the crystallization temperature of HfO_2 thin films effectively. FTIR analysis shows that relatively strong Si-O bond vibration pecks have been observed between the pure HfO_2 thin films and the Si substrate after the HfO_2 thin films were annealed at 1000 oC, while adding Al_2O_3 to HfO_2 thin films at the same annealing condition, the intensity of the Si-O peaks decreased obviously. The results indicate that HfO_2-Al_2O_3 thin films suppress Si-O bond growth at the interfacial layers effectively, and increase the thermal stability of interfacial layer.
4. Through the analysis of the characteristics of HfOxNy thin films deposited at different substrate temperatures, we obtained the optimal temperature range to suppress interfacial layer growth, and to decrease defects of interfacial layer between the high k gate dielectric thin films and Si substrate.
These studies are valuable for selection and optimization of HfOxNy and HfO_2-Al_2O_3 thin films as gate dielectrics in the future.
引文
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