射频/微波MEMS接触式开关的研究
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摘要
目前无线通信中的射频／微波MEMS器件已成为国际上的研究热点，MEMS开关作为射频／微波通信中实现信号路由转换的重要器件，成为了研究焦点。与传统上的微波开关PIN管和GaAs FET相比，MEMS开关有尺寸小，插入损耗小，隔离度大，线性度好，工作频段范围大，直流功率小等优点。本文讨论的MEMS接触式开关是利用表面微机械加工技术制备出来的一种可以应用在0—5GHz频段的射频／微波开关。
本文在广泛文献调研的基础上，分析了接触式开关的工作原理，并用ANSYS7.0和HFSS8.0软件对器件进行了有限元动态加载模拟和微波参数的模拟，最终设计了以信号线中间断开的CPW为传输线、以SiO_2为桥墩、以铝硅合金和Au—Si_3N_4—Al复合材料为梁的空气桥接触式开关。并推导了这种两端固定，两个下电极结构的接触式开关的下拉电压的公式。以SiO_2为桥墩的空气桥结构在国内未见报道。
在多次改版、流片的基础上，围绕制备工艺中的一些关键技术，对器件版图和工艺作了改进和完善，设计了满足实验室工艺精度的器件版图，提出了适用于该器件的工艺流程。经过多次的流片，成功地制备出了MEMS开关的样品。制备研究中，采用厚胶(负胶)和聚酰亚胺作为牺牲层材料，对牺牲层的前烘、坚膜和刻蚀技术做了重点研究，取得了有特色的研究结果。
目前我们制备的两种MEMS开关样品，一种为下拉电压较低的铝硅合金梁MEMS开关，另一种为开关寿命较长的Au—Si_3N_4—Al复合梁MEMS开关。样品的测试结果都到达了隔离度30dB@5GHz，插入损耗小于2dB@5GHz的要求。此外，我们还对MEMS开关的商品化进行了研究。对制备出的MEMS开关的样品进行了封装和初步测试。
本文以射频／微波MEMS接触式开关这一重要的微波器件为研究对象，对该器件工作原理、模拟、设计、加工、测试到封装进行了较全面的研究。设计了一种适合接触式开关的空气桥式结构，并对开关制备中的重要工艺——牺牲层技术进行了研究。实验结果显示本文的MEMS开关的设计是合理的，工艺实现是可行的，实际器件特性与理论分析是一致的，说明了MEMS系统可应用于射频／微波通信领域，该技术具有巨大的发展潜力。
At the present, microwave MEMS devices applied in the wireless communication is a focus of the research in the world. MEMS switch is a core device of microwave communications, that it can realize route-conversion. Compared with traditional microwave devices MEMS switch has some advantages, such as low insertion loss high isolatin, good linear characterN wide applied frequency range and low power. In this paper the switch that we researched is manufactured by surface micromachining process and is applied in 0-1 OGHz.
On the basis of research, we analyzed the operating principles of MEMS contact
switch. And we apply the softwares--ANSYS and HFSS to simulate how the
switch works. The results of the simulation make us understand the devices more and make the optimization of the devices' structure feasible. The switch includes SiO2 anchor CPW of disconnected single line and air-bridge structure. We base the results to design the switch's layout and the process parameters of the switch.
After lots of experiments, we improved on the device layout and fabrication process. And we put forward some new fabrication process and design the new device layout that satisfied the process condition of laboratory. MEMS switch samples are successfully made out. In the process, use negative photo resist and polyimide as sacrificial layer. The key processes for sacrifiaial layer technology are soft baking hard baking and etching. These are the focuses that we research.
The test results indicate that isolation is higher 30dB at 10GHz and the insertion loss is lower than 2dB at 1 OGHz. In addition, we made the research for the product of MEMS switch and packaged the sample of the switch.
In summary, based on MEMS technology, we research the MEMS switch of operations principles, simulations, design, fabrications, tests and package. We design new structure for serial switch. And emphasize on the sacrificial layer technology. The experiments results show that: the design is reasonable; the fabrication processes are feasible and the devices' characteristics are in accordance with the principle analysis. These also show the feasibility of using the MEMS technology in microwave communication field and the potential of MEMS technology.
本文在广泛文献调研的基础上，分析了接触式开关的工作原理，并用ANSYS7.0和HFSS8.0软件对器件进行了有限元动态加载模拟和微波参数的模拟，最终设计了以信号线中间断开的CPW为传输线、以SiO_2为桥墩、以铝硅合金和Au—Si_3N_4—Al复合材料为梁的空气桥接触式开关。并推导了这种两端固定，两个下电极结构的接触式开关的下拉电压的公式。以SiO_2为桥墩的空气桥结构在国内未见报道。
在多次改版、流片的基础上，围绕制备工艺中的一些关键技术，对器件版图和工艺作了改进和完善，设计了满足实验室工艺精度的器件版图，提出了适用于该器件的工艺流程。经过多次的流片，成功地制备出了MEMS开关的样品。制备研究中，采用厚胶(负胶)和聚酰亚胺作为牺牲层材料，对牺牲层的前烘、坚膜和刻蚀技术做了重点研究，取得了有特色的研究结果。
目前我们制备的两种MEMS开关样品，一种为下拉电压较低的铝硅合金梁MEMS开关，另一种为开关寿命较长的Au—Si_3N_4—Al复合梁MEMS开关。样品的测试结果都到达了隔离度30dB@5GHz，插入损耗小于2dB@5GHz的要求。此外，我们还对MEMS开关的商品化进行了研究。对制备出的MEMS开关的样品进行了封装和初步测试。
本文以射频／微波MEMS接触式开关这一重要的微波器件为研究对象，对该器件工作原理、模拟、设计、加工、测试到封装进行了较全面的研究。设计了一种适合接触式开关的空气桥式结构，并对开关制备中的重要工艺——牺牲层技术进行了研究。实验结果显示本文的MEMS开关的设计是合理的，工艺实现是可行的，实际器件特性与理论分析是一致的，说明了MEMS系统可应用于射频／微波通信领域，该技术具有巨大的发展潜力。
At the present, microwave MEMS devices applied in the wireless communication is a focus of the research in the world. MEMS switch is a core device of microwave communications, that it can realize route-conversion. Compared with traditional microwave devices MEMS switch has some advantages, such as low insertion loss high isolatin, good linear characterN wide applied frequency range and low power. In this paper the switch that we researched is manufactured by surface micromachining process and is applied in 0-1 OGHz.
On the basis of research, we analyzed the operating principles of MEMS contact
switch. And we apply the softwares--ANSYS and HFSS to simulate how the
switch works. The results of the simulation make us understand the devices more and make the optimization of the devices' structure feasible. The switch includes SiO2 anchor CPW of disconnected single line and air-bridge structure. We base the results to design the switch's layout and the process parameters of the switch.
After lots of experiments, we improved on the device layout and fabrication process. And we put forward some new fabrication process and design the new device layout that satisfied the process condition of laboratory. MEMS switch samples are successfully made out. In the process, use negative photo resist and polyimide as sacrificial layer. The key processes for sacrifiaial layer technology are soft baking hard baking and etching. These are the focuses that we research.
The test results indicate that isolation is higher 30dB at 10GHz and the insertion loss is lower than 2dB at 1 OGHz. In addition, we made the research for the product of MEMS switch and packaged the sample of the switch.
In summary, based on MEMS technology, we research the MEMS switch of operations principles, simulations, design, fabrications, tests and package. We design new structure for serial switch. And emphasize on the sacrificial layer technology. The experiments results show that: the design is reasonable; the fabrication processes are feasible and the devices' characteristics are in accordance with the principle analysis. These also show the feasibility of using the MEMS technology in microwave communication field and the potential of MEMS technology.
引文
[1] 刘广玉 樊尚春 周浩敏，“微机械电子系统及其应用”，北京航空航天大学出版社，2003年，第一版
[2] Hector J.De Los Santos, "Introduction to Microelectromechanical (MEM) Microwave Systems", Artech House Publisher
[3] 陈迪，“硅表面牺牲层技术”，电子科技导报，1999年第12期，16页
[4] Elliott R. Brown, "RF-MEMS Switches for Reconfigurable Integrated Circuits", IEEE Transactions on Microwave Theory and Techniques, Vol.46, No.11, 1998, pp 1868-1880.
[5] G.M.Rebeiz, G.-L.Tan, J.S.Hayden, "RF MEMS Phase Shifters: design and application", IEEE microwave magazine, No.6, 2002, pp72-81.
[6] Katherine Juliet Herrick, Thomas A. Schwarz, Linda P.B. Katehi, "Si-micromachined coplanar waveguides for use in high frequency circuit", IEEE Transactions on Microwave Theory and Techniques, Vol.46, No.6, 1998, pp762-768.
[7] William H. Weedom, William J. Payne," MEMS-Switched Reconfigurable Antennas", 2001 IEEE Antennas and Propagation Society International Symposium, (Boston, MA), July 8-13, 2001.
[8] Jose M.Lopez-Villegas, Josep Samitier, Charles Cane, Pere Losantos, Joan Bausells, "Improvement of the Quality Factor of RF Integrated Inductors by Layout Optimization", IEEE Transactions on Microwave Theory and Techniques, Vol.48, No. 1, 2000, pp76-83.
[9] Dooyoung Hah, "A Low-Voltage Actuated Micromachined Microwave Switch Using Torsion Srpings and leverage", IEEE Transactions on Microwave Theory and Technology, Vol.468, No. 12, December 2000, p2540-2545
[10] Jae Y. Park, "Monolithically intergrated micromachined RF MEMS capacitive switches", Sensors and Actuators, A 89(2001) 88-94
[11] 刘泽文，“用于通信领域的MEMS器件”，电子科技导报，1999年第7期，p．23-27
[12] Tom Campbell, "MEMS Switch Technology Approaches the "Ideal Switch" ", Applied Microwave & Wirless(网上)
[13] Z. Jamie Yao, Shea Chen, Susan Eshelman, David Denniston, Chuck Goldsmith, "Micromachined Low-Loss Microwave Switches", IEEE Journal of Microelectro-mechanical Systems, Vol. 8, No. 2, June 1999, p. 129-134
[14] Jeremy B. Muldavin, Gabriel M. Rebeiz, "Inline Capacitive and DC-Contact MEMS Shunt Switches", IEEE Microwave and Wirless Components Letters, Vol. 11, No. 8, August 2001, p.334-336
[15] S.N. Qiu, C.X. Qiu, I. Shih, M.Yu, G. Brassard and G. Seguin, "Development of a microwave microelectromechanical systems switch", J. Vac. Sci. Technol. A 20(3), May/Jun 2002, p.966-970
[16] Karl M. Strohm, Bernd Schauwecker, Dietmar Pilz, Winfried Simon, Johann-Friedrich Luy, "RF-MEMS Switching Concepts for High Power Applications" (网上)
[17] Jeremy B. Muldavin, Gabriel M. Rebeiz, "All-Metal High-Isolation Series and Series/Shunt MEMS Switches", IEEE Microwave and Wirless Components Letters, Vol. 11, No. 9, Septembert 2001, p.373-375
[18] F. Plotz, S. Michaelis, R. Aigner, H.J. Timme, J. Binder, R. Noe, "A low-voltage torsional actuator for application in RF-microswitches", Sensors and Actuators, A92 (2001) 312-317
[19] Gabriel M. Rebeiz, Jeremy B. Muldavin, "RF MEMS Switches and Switch Circuits", IEEE Microwave Magazine, December 2001, p.59-71
[20] Steogeb D. Senturia," Microsystem Design", Kluwer Academic Publishers, 2001, p.215
[21] David Elata, Ofir Bochobza-Degni, Yael Nemirovsky, "Analytical approach and numerical α-lines method for pull-in hyper-surface extraction of electrostatic actuators with multiple uncoupled voltage sources", JMEMS, vol. 12, pp. 681-691, Oct. 2003
[22] J. -M Huang, K. M. Liew, C. H. Wong, S. Rajendran, M. J. Tan, A. Q. Liu, "Mechanical design and optimization of capacitive micromachined switch", Sensor and actuators A, pp. 273-285, May 2001
[23] Jeremy B. Muldavin, Gabriel M Rebeiz, "All-metal high-isolation series and series/shunt MEMS switches", IEEE Microwave Wireless Compon. Lett, vol. 11, pp. 373-375, Sep. 2001
[24] 魏华征，胡梅丽，郑莹，郭方敏，赖宗声，“在线式RF MEMS开关的模拟与优化”，第八届全国敏感元件与传感器学术会议 P．357
[25] 韩爱珍，半导体工艺化学，东南大学出版社，1991版，p．64-67
[26] 胡梅丽，赖宗声，茅惠兵，忻佩胜，沈德新，“RF／MW MEMS开关中聚酰亚胺的牺牲层技术研究”，微电子学
[27] 张兴 郝一龙 李志宏 王阳元，“跨世纪的新技术—微机电系统(MEMS)”，电子科技导报，1999年
[28] Bernd Schauwecher. Karl M. Strohm, Winfried Simon, Johann-Friedrich Luy, "RF-MEMS Components for Broadband Applications", (网上)
[29] Jae Y. Park, Geun H. Kim, Ki W. Chungl, Jong U. Bu, "Monolithically integrated micromachined RF MEMS capacitive switches", Sensors and Actuators A 89 (2001), p.88-94
[30] Chienliu Chang, Peizen Chang, "Innovative micromachined microwave switch with very low insertion loss", Sensors and Actuators 79 2000, p.71-75
[31] S. Majumder, J. Lampen, R. Morrison, J. Maciel, "A Packaged, Hig-Lifetime Ohmic MEMS RF Switch", 2003 IEEE MTT-S Digest, p.1935-1938
[32] Guan-Leng Tan, Gabriel M. Rebeiz, "A DC-Contact MEMS Shunt Switch", IEEE Microwave and Wirless Components Letters, Vol. 12, No.6, June 2002, p.212-214
[33] Brian McCarthy, George G. Adams, Nicol E. McGruer, David Potter, "A Dynamic Model, Including Contact Bounce, of an Electrostatically Actuated Microswitch", Journal of Microelectromechanical Systems, Vol. 11, No.3, June 2002, p.276-283
[34] Dooyoung Hah, Euisik Yoon, Songcheol Hong, "A Low-Voltage Actuated Micromachined Microwave Switch Using Torsion Springs and Leverage", IEEE Transactions on Microwave Theory and Techniques, Vol.48, No. 12, December 2000, p.2540-2545
[35] Yumin Lu, Dimitrios Peroulis, Saeed Mohammadi, Linda P. B. Katehi, "A MEMS Reconfigurable Matching Network for a Class AB Amplifier", IEEE Microwave and Wirless Components Letters, Vol. 13, No. 10, October 2003, p.437-439
[36] Shea Chen, Terry V. Baughn, Zhimin Jamie Yao, Charles L. Goldsmith, "A New Residual Stress Measurement Method for a MEMS Thin Fixed-Fixed Beam Structure", IEEE Journal of Microelectro-mechanical Systems, Vol. 11, No. 4, August 2002, p.309-316
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[40] 胡梅丽，魏华征，茅惠兵，赖宗声，忻佩胜，“高隔离度射频微机械接触式开关”，第八届全国敏感元件与传感器学术会议 P．334
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[2] Hector J.De Los Santos, "Introduction to Microelectromechanical (MEM) Microwave Systems", Artech House Publisher
[3] 陈迪，“硅表面牺牲层技术”，电子科技导报，1999年第12期，16页
[4] Elliott R. Brown, "RF-MEMS Switches for Reconfigurable Integrated Circuits", IEEE Transactions on Microwave Theory and Techniques, Vol.46, No.11, 1998, pp 1868-1880.
[5] G.M.Rebeiz, G.-L.Tan, J.S.Hayden, "RF MEMS Phase Shifters: design and application", IEEE microwave magazine, No.6, 2002, pp72-81.
[6] Katherine Juliet Herrick, Thomas A. Schwarz, Linda P.B. Katehi, "Si-micromachined coplanar waveguides for use in high frequency circuit", IEEE Transactions on Microwave Theory and Techniques, Vol.46, No.6, 1998, pp762-768.
[7] William H. Weedom, William J. Payne," MEMS-Switched Reconfigurable Antennas", 2001 IEEE Antennas and Propagation Society International Symposium, (Boston, MA), July 8-13, 2001.
[8] Jose M.Lopez-Villegas, Josep Samitier, Charles Cane, Pere Losantos, Joan Bausells, "Improvement of the Quality Factor of RF Integrated Inductors by Layout Optimization", IEEE Transactions on Microwave Theory and Techniques, Vol.48, No. 1, 2000, pp76-83.
[9] Dooyoung Hah, "A Low-Voltage Actuated Micromachined Microwave Switch Using Torsion Srpings and leverage", IEEE Transactions on Microwave Theory and Technology, Vol.468, No. 12, December 2000, p2540-2545
[10] Jae Y. Park, "Monolithically intergrated micromachined RF MEMS capacitive switches", Sensors and Actuators, A 89(2001) 88-94
[11] 刘泽文，“用于通信领域的MEMS器件”，电子科技导报，1999年第7期，p．23-27
[12] Tom Campbell, "MEMS Switch Technology Approaches the "Ideal Switch" ", Applied Microwave & Wirless(网上)
[13] Z. Jamie Yao, Shea Chen, Susan Eshelman, David Denniston, Chuck Goldsmith, "Micromachined Low-Loss Microwave Switches", IEEE Journal of Microelectro-mechanical Systems, Vol. 8, No. 2, June 1999, p. 129-134
[14] Jeremy B. Muldavin, Gabriel M. Rebeiz, "Inline Capacitive and DC-Contact MEMS Shunt Switches", IEEE Microwave and Wirless Components Letters, Vol. 11, No. 8, August 2001, p.334-336
[15] S.N. Qiu, C.X. Qiu, I. Shih, M.Yu, G. Brassard and G. Seguin, "Development of a microwave microelectromechanical systems switch", J. Vac. Sci. Technol. A 20(3), May/Jun 2002, p.966-970
[16] Karl M. Strohm, Bernd Schauwecker, Dietmar Pilz, Winfried Simon, Johann-Friedrich Luy, "RF-MEMS Switching Concepts for High Power Applications" (网上)
[17] Jeremy B. Muldavin, Gabriel M. Rebeiz, "All-Metal High-Isolation Series and Series/Shunt MEMS Switches", IEEE Microwave and Wirless Components Letters, Vol. 11, No. 9, Septembert 2001, p.373-375
[18] F. Plotz, S. Michaelis, R. Aigner, H.J. Timme, J. Binder, R. Noe, "A low-voltage torsional actuator for application in RF-microswitches", Sensors and Actuators, A92 (2001) 312-317
[19] Gabriel M. Rebeiz, Jeremy B. Muldavin, "RF MEMS Switches and Switch Circuits", IEEE Microwave Magazine, December 2001, p.59-71
[20] Steogeb D. Senturia," Microsystem Design", Kluwer Academic Publishers, 2001, p.215
[21] David Elata, Ofir Bochobza-Degni, Yael Nemirovsky, "Analytical approach and numerical α-lines method for pull-in hyper-surface extraction of electrostatic actuators with multiple uncoupled voltage sources", JMEMS, vol. 12, pp. 681-691, Oct. 2003
[22] J. -M Huang, K. M. Liew, C. H. Wong, S. Rajendran, M. J. Tan, A. Q. Liu, "Mechanical design and optimization of capacitive micromachined switch", Sensor and actuators A, pp. 273-285, May 2001
[23] Jeremy B. Muldavin, Gabriel M Rebeiz, "All-metal high-isolation series and series/shunt MEMS switches", IEEE Microwave Wireless Compon. Lett, vol. 11, pp. 373-375, Sep. 2001
[24] 魏华征，胡梅丽，郑莹，郭方敏，赖宗声，“在线式RF MEMS开关的模拟与优化”，第八届全国敏感元件与传感器学术会议 P．357
[25] 韩爱珍，半导体工艺化学，东南大学出版社，1991版，p．64-67
[26] 胡梅丽，赖宗声，茅惠兵，忻佩胜，沈德新，“RF／MW MEMS开关中聚酰亚胺的牺牲层技术研究”，微电子学
[27] 张兴 郝一龙 李志宏 王阳元，“跨世纪的新技术—微机电系统(MEMS)”，电子科技导报，1999年
[28] Bernd Schauwecher. Karl M. Strohm, Winfried Simon, Johann-Friedrich Luy, "RF-MEMS Components for Broadband Applications", (网上)
[29] Jae Y. Park, Geun H. Kim, Ki W. Chungl, Jong U. Bu, "Monolithically integrated micromachined RF MEMS capacitive switches", Sensors and Actuators A 89 (2001), p.88-94
[30] Chienliu Chang, Peizen Chang, "Innovative micromachined microwave switch with very low insertion loss", Sensors and Actuators 79 2000, p.71-75
[31] S. Majumder, J. Lampen, R. Morrison, J. Maciel, "A Packaged, Hig-Lifetime Ohmic MEMS RF Switch", 2003 IEEE MTT-S Digest, p.1935-1938
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