超宽带6位MMIC数字移相器的研究与设计
摘要
射频和微波单片集成电路(MMIC)技术为现代无线通信、定位、传感、识别等系统提供了关键的核心元器件及电路,这对当今各种无线技术的飞速发展起到了关键的作用。
微波数字移相器作为相控阵雷达和电子战中有源相控阵发射/接收(T/R)组件的最关键电路,控制阵列上各个辐射单元的相位变化,以实现天线波束在空中快速电控扫描,并对空中飞行的运动目标实现快速的探测和跟踪。由于其重要的军用背景而一直倍受重视。经过多年的发展,基于GaAs材料和各种先进工艺为基础,MMIC技术的小型化移相器设计方法迅速发展。超宽带单片数字移相器设计和制造技术一直是某些发达国家对我国实施军事禁运的技术,由于超宽带单片数字移相器技术的鲜明国防和军事应用背景,使得我们开展对超宽带MMIC数字移相器的设计和制造技术的研究有着非常重要的意义。
本文首先分析了各种数字移相器的基本原理和电路拓扑,然后分析了组成移相器的各种无源器件,重点介绍了数字移相器中的核心控制器件PHEMT管芯等效电路模型参数的拟合方法,讨论和比较了不同位数移相器拓扑结构的特点,选择了各个不同位数合适的电路拓扑。使用Agilent公司的ADS软件,设计了6～18GHz超宽带6位MMIC数字移相器,经仿真优化达到了优异的电性能。
6位超宽带MMIC数字移相器采用0.5μm InGaAs PHEMT工艺实现,六位移相器级联后,在6～18GHz的工作频段内达到的总体指标为:64种相移态相移误差最大值为±3~0,输入驻波比典型值1.5,输出驻波比典型值1.85,级联插入损耗最大值为8.22dB,最小值为4.8dB,芯片面积为4mm×3.5mm×0.1mm,设计结果均优于设计要求,为流片工艺容差带来的性能恶化留有足够余量。
RF monolithic microwave integrated circuit (MMIC) technology providing a key component of the core components and devices for modern wireless communications system, location system, sensing system, and identification system so on, and played a key role part for the development in today's wireless technology.
Phase Shifter is used as send / receive (T/R) in phased array radar, through which control the radiation unit and then control the array of phase-change to achieve rapid scanning beam in the air, because it has an extremely important military use background and has been paid much more attention . With years of development and new technologies, based on GaAs technology, with the MMIC design methods, the technology of phase shifter developed rapidly. As developed countries have the most advanced MMIC technology and military embargo on our country, and a series of reasons for the processing technology in our own conditions on the backward, so that we have a sense of urgency for modernization of our nation's military technology, it take an important and practical significance in the MMIC phase shifter research and the entire process of MMIC.
First, this paper analyzed many circuits and the basic principles of digital phase shifter, and then analyzed various passive components in the composition of phase shifter, focusing on the core control device equivalent PHEMT used in phase shifter , then design equivalent circuit model to fit with the S parameters of PHEMT, discuss and compare the different median phase shifter topology ,at last choose suitable circuit topology, then use software of Agilent's ADS, simulate and optimize of the design 6～18 GHz ultra wideband MMIC six bits phase shifter, achieved excellent electrical properties.
The six bits MMIC digital phase shifter using 0.5μm InGaAs PHEMT process to achieve, after six bits ware connected, on 6～18 GHz working band, the indicators of 64 kinds of situations is: the various phase shift state for the worst error is±3°, typical VSWR value of input is 1.5, typical VSWR value of output is 1.8, the maximum and min insertion loss for the cascade is 8.22 dB and 4.8dB, the total chip area is 4mm×3.5mm×0.1mm , this design results are better than the design requirements and have enough cushion for production.
微波数字移相器作为相控阵雷达和电子战中有源相控阵发射/接收(T/R)组件的最关键电路,控制阵列上各个辐射单元的相位变化,以实现天线波束在空中快速电控扫描,并对空中飞行的运动目标实现快速的探测和跟踪。由于其重要的军用背景而一直倍受重视。经过多年的发展,基于GaAs材料和各种先进工艺为基础,MMIC技术的小型化移相器设计方法迅速发展。超宽带单片数字移相器设计和制造技术一直是某些发达国家对我国实施军事禁运的技术,由于超宽带单片数字移相器技术的鲜明国防和军事应用背景,使得我们开展对超宽带MMIC数字移相器的设计和制造技术的研究有着非常重要的意义。
本文首先分析了各种数字移相器的基本原理和电路拓扑,然后分析了组成移相器的各种无源器件,重点介绍了数字移相器中的核心控制器件PHEMT管芯等效电路模型参数的拟合方法,讨论和比较了不同位数移相器拓扑结构的特点,选择了各个不同位数合适的电路拓扑。使用Agilent公司的ADS软件,设计了6～18GHz超宽带6位MMIC数字移相器,经仿真优化达到了优异的电性能。
6位超宽带MMIC数字移相器采用0.5μm InGaAs PHEMT工艺实现,六位移相器级联后,在6～18GHz的工作频段内达到的总体指标为:64种相移态相移误差最大值为±3~0,输入驻波比典型值1.5,输出驻波比典型值1.85,级联插入损耗最大值为8.22dB,最小值为4.8dB,芯片面积为4mm×3.5mm×0.1mm,设计结果均优于设计要求,为流片工艺容差带来的性能恶化留有足够余量。
RF monolithic microwave integrated circuit (MMIC) technology providing a key component of the core components and devices for modern wireless communications system, location system, sensing system, and identification system so on, and played a key role part for the development in today's wireless technology.
Phase Shifter is used as send / receive (T/R) in phased array radar, through which control the radiation unit and then control the array of phase-change to achieve rapid scanning beam in the air, because it has an extremely important military use background and has been paid much more attention . With years of development and new technologies, based on GaAs technology, with the MMIC design methods, the technology of phase shifter developed rapidly. As developed countries have the most advanced MMIC technology and military embargo on our country, and a series of reasons for the processing technology in our own conditions on the backward, so that we have a sense of urgency for modernization of our nation's military technology, it take an important and practical significance in the MMIC phase shifter research and the entire process of MMIC.
First, this paper analyzed many circuits and the basic principles of digital phase shifter, and then analyzed various passive components in the composition of phase shifter, focusing on the core control device equivalent PHEMT used in phase shifter , then design equivalent circuit model to fit with the S parameters of PHEMT, discuss and compare the different median phase shifter topology ,at last choose suitable circuit topology, then use software of Agilent's ADS, simulate and optimize of the design 6～18 GHz ultra wideband MMIC six bits phase shifter, achieved excellent electrical properties.
The six bits MMIC digital phase shifter using 0.5μm InGaAs PHEMT process to achieve, after six bits ware connected, on 6～18 GHz working band, the indicators of 64 kinds of situations is: the various phase shift state for the worst error is±3°, typical VSWR value of input is 1.5, typical VSWR value of output is 1.8, the maximum and min insertion loss for the cascade is 8.22 dB and 4.8dB, the total chip area is 4mm×3.5mm×0.1mm , this design results are better than the design requirements and have enough cushion for production.
引文
[1]Ian Robertson,Stepan Lucyszyn.RFIC.and.MMIC.design.and.technology.p1
[2]吴群.MMIC—单片微波集成电路技术.p1.2003
[3]李静.T/R模块的发展现状及趋势.电子13所,1998
[4]吴群,单片微波集成电路技术的军事应用,2003
[5]Shamsur R.Mazumder and Carl M.Isham.Performance of A 6 to 18 GHz Frequency Translator Utilizing GaAs MMIC 5-bit Digital Phase Shifter,Raytheon Company IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium 1995
[6]戴永胜,徐世晖,李辉等.GaAs MMIC多位数字移相器的CAD及其研究.'98全国第七届“徽波集成电路及工艺”学木会论文集.1998
[7]Kenichi Miyaguchi.,Morishige Hieda..Kazuhiko Nakahara.An Ultra Broad Band Reflection Type Phase-Shifter MMIC With Series and Parallel LC Circuits.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,VOL.49,NO.12,DECEMBER 2001
[8]Hyukjin Kwon,Hongwook Lim,and Bongkoo Kang.Design of 6-18 GHz Wideband Phase Shifters Using Radial Stubs.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS,VOL.17,NO.3,MARCH 2007
[9]Dong-Woo Kang,Songcheol Hong.A 4-bit CMOS Phase Shifter Using Distributed Active Switches.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,VOL.55,NO.7,JULY 2007
[10]Dong-Woo Kang,Hoseon Lee,Kyong Hee Lee,Soon-Ik Jeon,and Songcheol Hong.Design of a Phase Shifter with Improved Bandwidth using Embedded Series-Shunt Switches.IEEE
[11]Zhiyang Liu,,Jason C.Midkiff,Haiyong Xu,Thomas W.Crowe,and Robert M.Weikle Ⅱ.Broad-Band 180 Phase Shifters Using Integrated Submillimeter Wave Schottky Diodes.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,VOL.53,NO.9,SEPTEMBER 2005
[12]Dai Yongsheng,Chen Xiaojian,Chen Tangsheng,Yu Tufa,Liu Lin,Lin Jinting.A MULTI-OCTAVE FIVE-BIT MMIC PHASE SHIFTER WITH COMPATIBLE DIFFERENT CONTROL SIGNALS.Nanjing Electronic Devices Institute.2002
[13]I.J.Bahl and K.C.Gufta.Design of Loaded-Line p-i-n Diode Phase Shifter Circuits.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,vol.MIT- 28, NO,3, MARCH 1980
[14] Dunn, V.E.,Hodges,N.E.,SY,O.A.,and Alyassini,W.:"MMIC phase shifters and amplifyers for millimeter-wavalength active arrays", IEEE MTT-S International Microwave Symosium Digest ,pp. 127-130,1989
[15] Jui-Chieh Chiu, Chih-Ming Lin, and Yeong-Her Wang. A 3-dB Quadrature Coupler Suitable for PCB Circuit Design. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,VOL.54,NO.9,SEPTEMBER 2006
[16] J. Rogers, R. Bhatia. A 6 TO 20 GHz Planar Balun Usings a wilkison Divider and Lange Couplers. 1991
[17] L. Billonnet-B,Jarry-P,Guillon. Design Concept For Microwave Recursive and Ransversal Filters Using Lange Couplers. 1992
[18] Gallone. Brehm, Randalle. Lehmann. Monolithic GaAs Lange Coupler at X-Band. IEEE TRANSACTIONS ON ELECTRON DEVICES,V0L.ED-28,N0.2, FEBRUARY 1981
[19] Constantine Andricos, Inder J. Bahl, Senior Member, IEEE, and Edwardl. Griffin, Member IEEE. C-band 6-bit GaAs monolithic phase shifter. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. MIT-33, NO. 12,DECEMOER, 1985
[20] D.C. Boire, G. St. Onge, C. Barratt, G.B. Norris, & A. Moysenko. 4:1 bandwidth digital five bit MMIC phase shifters. ANDERS ASSOCIATES Microwave Technology Center. 1988
[21] Kobayashi,K.W.,Tran,L,Okl,A.K., and Streit, D.C.:'A 50 MHz-30GHz broadband co-planar waveguide SPDT PIN diode switch with 45-dB isolation' ,IEEE Microve and Guided Wave Letters,pp.56-58,1995
[22] Ayasli,Y.,Miller,S.W.,Mozzi,R,and Hanes,L.K.:'Wideband monolithic phase shifter', IEEE Transactions on Microwave Theory and Techniques, MTT-32(12), PP.1710- 1714, 1984
[23] Reber,R.H., and Felde,H.-P,:'A monolithic single-chip C-band 6-bit phase shifter', Proceedings of 21st European Microwave Conference , Stuttgart, pp479-482, 1991
[24] BOIRE, D, Internatio. C.,DEGENFORD,J.E.,and COHN,M.:'A 4.5 to 18GHz phase shifter', IEEE MTT-S International Microwave Symposium Digest,pp.601-604 1985
[25] MILLER, P., and ANDERSON, A.K.:'Development of gain/phase control blocks for space applications', IEEE ESA Proceedings of the European Gallium Arsenide Applications Symposium, ESTEC,Noordwijk, 1992
[26]Walters,P.C.,and FIKART,J.L.:'A fully integrated 5-bit phase shifter for phased array applications',IEEE International Symposium Digest on MMICs in communications Systems,London,1992
[27]Inder Bahl,Prakash Bhartia,Microwave Solid State Circuit Design,Second Edition,p588-p597
[28]Moore,M.T.,and Miller,P."Microwave IC control components for phased-array antennas',IEEE Electronics and Communication Engineering Journal,pp123-130,1992
[29]Borgiolli,A.,Liu,Y.,Nagra,A.S.,and York,R.A.:'Low-loss distributed MEMS phase shifter',IEEE Microwave and Guided Wave Letters,pp7-9,2000
[30]Hayden,J.S.,and Rebeiz,G.M.:'Low-loss cascadable MEMS distributed X-band phase shifters',IEEE Microwave and Guided Wave Letters,pp,142-144,2000
[31]吴海东,庄志强,莫郁薇,张增照,聂国健.GaAs MMIC可靠性研究与进展,电子5所.电子产品可靠性与环境试验,Feb.2001
[32]Jansen,R.H.;Arnold,R.G.;Eddison,I.G.;a comprehensive CAD approach to the design of MMICs up to millimeter-wave frequencies.Page(s):208-219,1988
[33]黄志忠,殷晓星,崔铁军,洪伟.砷化镓衬底上螺旋电感的建模和分析.微波学报,Apr.2005
[34]陈新宇,徐全胜,陈继义,陈效建,郝西萍,李拂晓,蒋幼泉.宽带GaAs MESFET 开关模型.南京电子器件研究所.May,2003
[35]吴洪江,高学邦,任怀龙等.GaAs IC CAD及其在通信电路中的应用技术.半导体情报,Feb.2000
[36]Ross,svensson and Lugli(Eds):'Proceedings of the NATO Advanced Study Institude on Pseudomorphic HEMT technology and applications'.Kluwer Academic Publishers,1996
[37]Ian Robertson,Stepan Lucyszyn.RFIC.and.MMIC.design.and.technology.p56
[38]谢媛媛,高学邦,魏洪涛等,GaAs PHEMT开关模型的研究.中电13所,March,2006
[39]戴永胜,方大纲.GaAs MMIC开关MESFET电路建模技术研究.南京理工大学学报,Oct.2006
[40]V.K.Singh,PhD,Prof.B.B.Pal.Effect of optical radiation and surface recombination on the RF switching parameters of a GaAs MESFET.IEE PROCEEDINGS,Vol.137,Pt.J,No.2,APRIL 1990
[41]Nitin Jain and Ronaldj.Gutmann.Modeling and Design of GaAs MESFET Control Devices for Broad-Band Applications.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQIJES.V OL.38,NO.2,FEB 1990
[42]陈雪军,徐世珲,岑元飞等.GaAs微波单片集成电路中器件的精确建模。固体电子学研究与进展,May,2001
[43]申华军,杨瑞霞,高学邦,王同祥.GaAs MESFET开关的设计和建模.河北工业大学学报.April 2003
[2]吴群.MMIC—单片微波集成电路技术.p1.2003
[3]李静.T/R模块的发展现状及趋势.电子13所,1998
[4]吴群,单片微波集成电路技术的军事应用,2003
[5]Shamsur R.Mazumder and Carl M.Isham.Performance of A 6 to 18 GHz Frequency Translator Utilizing GaAs MMIC 5-bit Digital Phase Shifter,Raytheon Company IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium 1995
[6]戴永胜,徐世晖,李辉等.GaAs MMIC多位数字移相器的CAD及其研究.'98全国第七届“徽波集成电路及工艺”学木会论文集.1998
[7]Kenichi Miyaguchi.,Morishige Hieda..Kazuhiko Nakahara.An Ultra Broad Band Reflection Type Phase-Shifter MMIC With Series and Parallel LC Circuits.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,VOL.49,NO.12,DECEMBER 2001
[8]Hyukjin Kwon,Hongwook Lim,and Bongkoo Kang.Design of 6-18 GHz Wideband Phase Shifters Using Radial Stubs.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS,VOL.17,NO.3,MARCH 2007
[9]Dong-Woo Kang,Songcheol Hong.A 4-bit CMOS Phase Shifter Using Distributed Active Switches.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,VOL.55,NO.7,JULY 2007
[10]Dong-Woo Kang,Hoseon Lee,Kyong Hee Lee,Soon-Ik Jeon,and Songcheol Hong.Design of a Phase Shifter with Improved Bandwidth using Embedded Series-Shunt Switches.IEEE
[11]Zhiyang Liu,,Jason C.Midkiff,Haiyong Xu,Thomas W.Crowe,and Robert M.Weikle Ⅱ.Broad-Band 180 Phase Shifters Using Integrated Submillimeter Wave Schottky Diodes.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,VOL.53,NO.9,SEPTEMBER 2005
[12]Dai Yongsheng,Chen Xiaojian,Chen Tangsheng,Yu Tufa,Liu Lin,Lin Jinting.A MULTI-OCTAVE FIVE-BIT MMIC PHASE SHIFTER WITH COMPATIBLE DIFFERENT CONTROL SIGNALS.Nanjing Electronic Devices Institute.2002
[13]I.J.Bahl and K.C.Gufta.Design of Loaded-Line p-i-n Diode Phase Shifter Circuits.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,vol.MIT- 28, NO,3, MARCH 1980
[14] Dunn, V.E.,Hodges,N.E.,SY,O.A.,and Alyassini,W.:"MMIC phase shifters and amplifyers for millimeter-wavalength active arrays", IEEE MTT-S International Microwave Symosium Digest ,pp. 127-130,1989
[15] Jui-Chieh Chiu, Chih-Ming Lin, and Yeong-Her Wang. A 3-dB Quadrature Coupler Suitable for PCB Circuit Design. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,VOL.54,NO.9,SEPTEMBER 2006
[16] J. Rogers, R. Bhatia. A 6 TO 20 GHz Planar Balun Usings a wilkison Divider and Lange Couplers. 1991
[17] L. Billonnet-B,Jarry-P,Guillon. Design Concept For Microwave Recursive and Ransversal Filters Using Lange Couplers. 1992
[18] Gallone. Brehm, Randalle. Lehmann. Monolithic GaAs Lange Coupler at X-Band. IEEE TRANSACTIONS ON ELECTRON DEVICES,V0L.ED-28,N0.2, FEBRUARY 1981
[19] Constantine Andricos, Inder J. Bahl, Senior Member, IEEE, and Edwardl. Griffin, Member IEEE. C-band 6-bit GaAs monolithic phase shifter. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. MIT-33, NO. 12,DECEMOER, 1985
[20] D.C. Boire, G. St. Onge, C. Barratt, G.B. Norris, & A. Moysenko. 4:1 bandwidth digital five bit MMIC phase shifters. ANDERS ASSOCIATES Microwave Technology Center. 1988
[21] Kobayashi,K.W.,Tran,L,Okl,A.K., and Streit, D.C.:'A 50 MHz-30GHz broadband co-planar waveguide SPDT PIN diode switch with 45-dB isolation' ,IEEE Microve and Guided Wave Letters,pp.56-58,1995
[22] Ayasli,Y.,Miller,S.W.,Mozzi,R,and Hanes,L.K.:'Wideband monolithic phase shifter', IEEE Transactions on Microwave Theory and Techniques, MTT-32(12), PP.1710- 1714, 1984
[23] Reber,R.H., and Felde,H.-P,:'A monolithic single-chip C-band 6-bit phase shifter', Proceedings of 21st European Microwave Conference , Stuttgart, pp479-482, 1991
[24] BOIRE, D, Internatio. C.,DEGENFORD,J.E.,and COHN,M.:'A 4.5 to 18GHz phase shifter', IEEE MTT-S International Microwave Symposium Digest,pp.601-604 1985
[25] MILLER, P., and ANDERSON, A.K.:'Development of gain/phase control blocks for space applications', IEEE ESA Proceedings of the European Gallium Arsenide Applications Symposium, ESTEC,Noordwijk, 1992
[26]Walters,P.C.,and FIKART,J.L.:'A fully integrated 5-bit phase shifter for phased array applications',IEEE International Symposium Digest on MMICs in communications Systems,London,1992
[27]Inder Bahl,Prakash Bhartia,Microwave Solid State Circuit Design,Second Edition,p588-p597
[28]Moore,M.T.,and Miller,P."Microwave IC control components for phased-array antennas',IEEE Electronics and Communication Engineering Journal,pp123-130,1992
[29]Borgiolli,A.,Liu,Y.,Nagra,A.S.,and York,R.A.:'Low-loss distributed MEMS phase shifter',IEEE Microwave and Guided Wave Letters,pp7-9,2000
[30]Hayden,J.S.,and Rebeiz,G.M.:'Low-loss cascadable MEMS distributed X-band phase shifters',IEEE Microwave and Guided Wave Letters,pp,142-144,2000
[31]吴海东,庄志强,莫郁薇,张增照,聂国健.GaAs MMIC可靠性研究与进展,电子5所.电子产品可靠性与环境试验,Feb.2001
[32]Jansen,R.H.;Arnold,R.G.;Eddison,I.G.;a comprehensive CAD approach to the design of MMICs up to millimeter-wave frequencies.Page(s):208-219,1988
[33]黄志忠,殷晓星,崔铁军,洪伟.砷化镓衬底上螺旋电感的建模和分析.微波学报,Apr.2005
[34]陈新宇,徐全胜,陈继义,陈效建,郝西萍,李拂晓,蒋幼泉.宽带GaAs MESFET 开关模型.南京电子器件研究所.May,2003
[35]吴洪江,高学邦,任怀龙等.GaAs IC CAD及其在通信电路中的应用技术.半导体情报,Feb.2000
[36]Ross,svensson and Lugli(Eds):'Proceedings of the NATO Advanced Study Institude on Pseudomorphic HEMT technology and applications'.Kluwer Academic Publishers,1996
[37]Ian Robertson,Stepan Lucyszyn.RFIC.and.MMIC.design.and.technology.p56
[38]谢媛媛,高学邦,魏洪涛等,GaAs PHEMT开关模型的研究.中电13所,March,2006
[39]戴永胜,方大纲.GaAs MMIC开关MESFET电路建模技术研究.南京理工大学学报,Oct.2006
[40]V.K.Singh,PhD,Prof.B.B.Pal.Effect of optical radiation and surface recombination on the RF switching parameters of a GaAs MESFET.IEE PROCEEDINGS,Vol.137,Pt.J,No.2,APRIL 1990
[41]Nitin Jain and Ronaldj.Gutmann.Modeling and Design of GaAs MESFET Control Devices for Broad-Band Applications.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQIJES.V OL.38,NO.2,FEB 1990
[42]陈雪军,徐世珲,岑元飞等.GaAs微波单片集成电路中器件的精确建模。固体电子学研究与进展,May,2001
[43]申华军,杨瑞霞,高学邦,王同祥.GaAs MESFET开关的设计和建模.河北工业大学学报.April 2003