宽带数控延时线芯片的研制
摘要
在多通道运用和多目标跟踪方面的无线通信对工作带宽提出了很高的要求。受无线通信市场需求的牵引,具有宽带、高精度、大延时量的宽带数控延时线成为研究的焦点。宽带数控延时线是微波收发系统的核心电路。微波单片数控延时线具有体积小、重量轻、可靠性高等优点。单片数控延时线已经广泛应用于电子系统中。
本论文介绍了宽带数控延时线的工作原理、电路设计、微波单片电路制作工艺以及测试技术。本文的数控延时线芯片采用GaAs PHEMT材料和微波单片集成电路工艺,采用了电路和电磁场仿真相结合的设计方法。同时,所有延时位在延时支路采用常阻延时网络,从而实现了高延时精度、大延时量等性能。
典型GaAs MMIC数控延时线芯片主要性能指标测试结果为:
工作频率:2～18GHz;延时位:6位;插入损耗≤22.0dB;总延时量为315ps;驻波比≤2.5:1。
测试结果均达到了设计要求,较好的验证了砷化镓微波单片集成电路设计理论,也为今后的改进设计提供了重要的参考。最后还针对测试结果给出了相应的理论分析。
Wireless communication often demands wideband performance for multi-channel operation and steering multiple moving targets. Driven by the demand of the wireless communication market,there is great interest in the development of broadband,high delay-time accuracy, large delay-time GaAs MMIC solutions. Wideband digital true time delay (TTD) are the core chip for microwave T/R systems. Small size, light weight, high reliability make MMIC digital true time delay have been widely used in various electronic systems.
This paper describes the operating principle, circuit design, MMIC fabrication and testing techniques for broadband digital true time delay. The digital true time delay development is based on PHEMT material, MMIC process and the design method combining schematic diagram and electromagnetic simulations. All time-delay bits use a topology with constant-R networks in the delay path.High delay-time accuracy, large delay-time have been achieved.
Measurement results for a typical chip are presented.The main specifications of the GaAs MMIC digital true time delay are as follows:
Frequency range: 2 ~ 18GHz; number of bits: 6bits; insertion loss≤22.0dB; total delay time 315ps; VSWR≤2.5:1.
The test results satisfy the design requirement, verify the GaAs MMIC design theory, and provide important references for design improvement in the future.and the theory analysis according to the test results are also given.
本论文介绍了宽带数控延时线的工作原理、电路设计、微波单片电路制作工艺以及测试技术。本文的数控延时线芯片采用GaAs PHEMT材料和微波单片集成电路工艺,采用了电路和电磁场仿真相结合的设计方法。同时,所有延时位在延时支路采用常阻延时网络,从而实现了高延时精度、大延时量等性能。
典型GaAs MMIC数控延时线芯片主要性能指标测试结果为:
工作频率:2～18GHz;延时位:6位;插入损耗≤22.0dB;总延时量为315ps;驻波比≤2.5:1。
测试结果均达到了设计要求,较好的验证了砷化镓微波单片集成电路设计理论,也为今后的改进设计提供了重要的参考。最后还针对测试结果给出了相应的理论分析。
Wireless communication often demands wideband performance for multi-channel operation and steering multiple moving targets. Driven by the demand of the wireless communication market,there is great interest in the development of broadband,high delay-time accuracy, large delay-time GaAs MMIC solutions. Wideband digital true time delay (TTD) are the core chip for microwave T/R systems. Small size, light weight, high reliability make MMIC digital true time delay have been widely used in various electronic systems.
This paper describes the operating principle, circuit design, MMIC fabrication and testing techniques for broadband digital true time delay. The digital true time delay development is based on PHEMT material, MMIC process and the design method combining schematic diagram and electromagnetic simulations. All time-delay bits use a topology with constant-R networks in the delay path.High delay-time accuracy, large delay-time have been achieved.
Measurement results for a typical chip are presented.The main specifications of the GaAs MMIC digital true time delay are as follows:
Frequency range: 2 ~ 18GHz; number of bits: 6bits; insertion loss≤22.0dB; total delay time 315ps; VSWR≤2.5:1.
The test results satisfy the design requirement, verify the GaAs MMIC design theory, and provide important references for design improvement in the future.and the theory analysis according to the test results are also given.
引文
[1]中国集成电路大全.编委会.微波集成电路.北京:国防工业出版社,1995.5.
[2] MAO,S.,JONES,S., and VENDELIN,G.D.,“Millimeter-wave integrated circuits”, IEEE Journal of Solid-State Circuits,1968,SC-3(2)p.117-123.
[3] Pengelly R.S.and.Turner J.A,“Monolithic Broadband GaAs FET Amplifiers”, Electron Letters,Vol 12(10),1976,pp:251-252.
[4] JOSHI,J.S., and TURNER, J.A.,“Monolithic microwave GaAs FET oscillators”, IEEE GaAs IC Symposium, Lake Tahoe, Nevada, USA,1979.
[5] Vesna Radisic,Kevin M.K.H.Leong,Xiaobing Mei,Stephen Sarkozy,Wayne Yoshida,Po-Hsin Liu,Jansen Uyeda,Richard Lai,and William R.Deal“A 50mW 220GHz Power Amplifier Module”2010 IEEE MTT-S International Microwave Symposium Digest ,May 2010,pp.45-48
[6] Mike Sarcione and Angelo Puzella“Technology Trends for Future Low Cost Phased Arrays”2010 IEEE MTT-S International Microwave Symposium Digest ,May 2010,pp.688-690
[7] Mark A Fischman et al. A Digital Beamforming Processor for the Joint DoD/NASA Space Based Radar Mission[J] Jet Propulsion labortary,CIT,USA
[8] John G Willms et al. A WIDEBAND GAAS 6-BIT TRUE-TIME DELAY MMIC EMPLOYING ON-CHIP DIGITAL DRIVERS[B] TNO Physics and electrnics laboratory Netherlands
[9]喻梦霞李桂萍微波固态电路电子科技大学出版社2008
[10] Gao Xuebang, Wang Shaodong, Wu Hongjiang,“MMIC Layout Verification using Electromagnetic Simulation”, 3rd ICMMT, 2002:255.
[11]高学邦等.GaAs MESFET开关模型的研究[J]半导体情报2000, 01
[12]谢媛媛.高学邦.魏洪涛等,“GaAs PHEMT开关模型的研究”,半导体技术, 2006, 3.
[13] I.D.Robertson and S.Lucyszyn. RFIC and MMIC design and technology [M]The Institution of Electrical Engineers, London,UK 2001
[14] Agilent Technologies.网络分析仪原理及其运用.
[15] Mounir Adada, Tom Dhaene, Advanced Model Composer: Empowering Designers with Speed and Accuracy, Microwave Product Digest, April 2004.
[16] Aziz.Ouacha et al. 638 mm relative delay 9-bits MMIC TTD for active phased arraySARMTI[C] European Radar Conference 2004 A. Ouacha and B.carlegrim,MMIC Self-Switched Time Shifter For Broadband Applications[J] Microwave And Optical Technology Letters,pp15-20,September 1998
[17] AYASLI Y, PLATZKER A, VORHAUS J. A monolithic single-chip X-band four-bit phase shifter[J]. IEEE Transactions on Microwave Theory and Techniques,1982, 30 (12): 2201-2205.
[18]谢媛媛等数控单片移相器的CAD[J]半导体技术2006, 06
[19]方园等一款宽带实时延迟线芯片的设计和实现[J]半导体技术2009, 6
[20]方园等DC～40GHz反射型GaAs MMIC SPST开关[J]半导体技术2008, 12
[21] S020115 Wideband 6-bit TTD MMIC 4th generation .TNO Physics and Electronics Laboratory[B] TNO Company datasheets and product information
[22] R.J.Mailloux,Phased Array Antenna Handbook [K] ,Boston London Artech House,1993
[23] Hara. S., Tokumitsu T., and Aikawa M.,“Lossless, broadband monolithic microwave active inductors”, IEEE MTT-S International Microwave?mposium Digest, 1989, pp:955-958.
[24] Mounir Adada, New Technology for Automatic Spiral Inductor Model Generation Speeds and Enhances Circuit Design for Ultra-Wideband Applications, Microwave Product Digest, August 2005.
[25] Jonathan D, Roderick et al. A 4-bit Ultra-Wideband beamformer with 4ps True Time Delay Rezolution[C] IEEE 2005 Custom Integrated Circuits Conference
[2] MAO,S.,JONES,S., and VENDELIN,G.D.,“Millimeter-wave integrated circuits”, IEEE Journal of Solid-State Circuits,1968,SC-3(2)p.117-123.
[3] Pengelly R.S.and.Turner J.A,“Monolithic Broadband GaAs FET Amplifiers”, Electron Letters,Vol 12(10),1976,pp:251-252.
[4] JOSHI,J.S., and TURNER, J.A.,“Monolithic microwave GaAs FET oscillators”, IEEE GaAs IC Symposium, Lake Tahoe, Nevada, USA,1979.
[5] Vesna Radisic,Kevin M.K.H.Leong,Xiaobing Mei,Stephen Sarkozy,Wayne Yoshida,Po-Hsin Liu,Jansen Uyeda,Richard Lai,and William R.Deal“A 50mW 220GHz Power Amplifier Module”2010 IEEE MTT-S International Microwave Symposium Digest ,May 2010,pp.45-48
[6] Mike Sarcione and Angelo Puzella“Technology Trends for Future Low Cost Phased Arrays”2010 IEEE MTT-S International Microwave Symposium Digest ,May 2010,pp.688-690
[7] Mark A Fischman et al. A Digital Beamforming Processor for the Joint DoD/NASA Space Based Radar Mission[J] Jet Propulsion labortary,CIT,USA
[8] John G Willms et al. A WIDEBAND GAAS 6-BIT TRUE-TIME DELAY MMIC EMPLOYING ON-CHIP DIGITAL DRIVERS[B] TNO Physics and electrnics laboratory Netherlands
[9]喻梦霞李桂萍微波固态电路电子科技大学出版社2008
[10] Gao Xuebang, Wang Shaodong, Wu Hongjiang,“MMIC Layout Verification using Electromagnetic Simulation”, 3rd ICMMT, 2002:255.
[11]高学邦等.GaAs MESFET开关模型的研究[J]半导体情报2000, 01
[12]谢媛媛.高学邦.魏洪涛等,“GaAs PHEMT开关模型的研究”,半导体技术, 2006, 3.
[13] I.D.Robertson and S.Lucyszyn. RFIC and MMIC design and technology [M]The Institution of Electrical Engineers, London,UK 2001
[14] Agilent Technologies.网络分析仪原理及其运用.
[15] Mounir Adada, Tom Dhaene, Advanced Model Composer: Empowering Designers with Speed and Accuracy, Microwave Product Digest, April 2004.
[16] Aziz.Ouacha et al. 638 mm relative delay 9-bits MMIC TTD for active phased arraySARMTI[C] European Radar Conference 2004 A. Ouacha and B.carlegrim,MMIC Self-Switched Time Shifter For Broadband Applications[J] Microwave And Optical Technology Letters,pp15-20,September 1998
[17] AYASLI Y, PLATZKER A, VORHAUS J. A monolithic single-chip X-band four-bit phase shifter[J]. IEEE Transactions on Microwave Theory and Techniques,1982, 30 (12): 2201-2205.
[18]谢媛媛等数控单片移相器的CAD[J]半导体技术2006, 06
[19]方园等一款宽带实时延迟线芯片的设计和实现[J]半导体技术2009, 6
[20]方园等DC～40GHz反射型GaAs MMIC SPST开关[J]半导体技术2008, 12
[21] S020115 Wideband 6-bit TTD MMIC 4th generation .TNO Physics and Electronics Laboratory[B] TNO Company datasheets and product information
[22] R.J.Mailloux,Phased Array Antenna Handbook [K] ,Boston London Artech House,1993
[23] Hara. S., Tokumitsu T., and Aikawa M.,“Lossless, broadband monolithic microwave active inductors”, IEEE MTT-S International Microwave?mposium Digest, 1989, pp:955-958.
[24] Mounir Adada, New Technology for Automatic Spiral Inductor Model Generation Speeds and Enhances Circuit Design for Ultra-Wideband Applications, Microwave Product Digest, August 2005.
[25] Jonathan D, Roderick et al. A 4-bit Ultra-Wideband beamformer with 4ps True Time Delay Rezolution[C] IEEE 2005 Custom Integrated Circuits Conference