多倍频程MMIC数字移相器的研究与设计
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摘要
微波单片集成电路(MMIC)数字移相器是现代相控阵雷达系统中收发(T/R)组件的核心组成部分,其性能的优劣对相控阵雷达的性能有着直接的影响。本文针对多频段宽带MMIC数字移相器进行了研究。
根据本课题研究的单片多倍频程数字移相器的要求,从电路原理、结构特点、指标要求、尺寸要求等方面综合考虑,重点针对高/低通滤波器拓扑与反射型拓扑做了分析和研究。依据分析、比较的结果确定最佳方案,最后对6～18GHz的多频段数字移相器进行了设计。
本文还对MMIC电路中元器件的建模进行了简要介绍。MMIC电路中无源元件和有源器件形式多样,需要采用合适的方法对相关元器件进行建模,即电路模型参数提取。设计过程中,采用工程建模方法对电路中的元器件和控制器件(PHEMT)建立了等效电路模型。整个建模过程是紧密结合MMIC工艺线提供的有关参数进行的,从而保证了设计的可信性和准确性。
本文首先对移相器、MMIC等概念以及应用背景进行了简单的介绍。然后对各种类型的移相器进行了分析,根据上述结果确定了5.625°/11.25°/22.5°相移位采用高/低通滤波器型拓扑,45°/90°/180°采用反射型拓扑的设计方案。接着,利用Agilent公司的ADS软件,分别对各个相移位的原理图电路进行了的优化。然后根据电性能优化结果进行版图设计,并结合版图进行仿真优化。最后,我们选取了最优的方案对6～18GHz工作频段内5位MMIC数字移相器进行了流片和测试。测试结果表明,设计与测试结果基本吻合。
本课题设计的多倍频程5位MMIC数字移相器实物测试结果显示:在6～18GHz的工作频率内,11.25°相移位的相移误差＜1.65°;22.5°相移位的相移误差＜2.4°;45°相移位的相移误差＜4.1°;90°相移位的相移误差＜9.2°;180°相移位的相移误差＜8°。插入损耗保持在7.5dB～11.8dB的范围内,输入端与输出端的驻波比均小于2.5。五位数字移相器的芯片面积为3.555 mm×4.055 mm×0.1 mm。
Digital phase shifter,based on RF monolithic microwave integrated circuit(MMIC) technology,is the core component of the transmit/receive(T/R) in the modern phased array radar system.The performance of the phase shifter has a direct impact on phased array radar system.This article introduces the research about multi-band MMIC digital phase shifter.
Based on the requirement of this research,we carefully analyze the high/low pass structure and the reflective structure from the circuit theory,the character of the topology,the requirement of the specification,and the requirement of the size.According the result above, we determine the best program for designing the 6～18 GHz multi-band digital phase shifter.
In this article,we also briefly introduce the knowledge about modeling the components which are used in the MMIC circuit.The passive component and the active component,in the circuit,have many forms,so we should model the component in right way,which is usually called circuit model parameter extraction.In the design process,we establish the equivalent model for the components and the control devices(PHEMT) in the circuit by the application model theory.Through the model process above,we could guarantee the correctness of the design.
At the beginning of the article,we briefly introduce the concepts of phase shifter,MMIC and the application background.And in the middle of the article,we carefully analyze various types phase shifters and get some results,after summing up the characters of the various phase shifters circuit topology and the basic principles,we finally determine the design program,for instance,using the high/low pass structure to design the 5.625°/11.25°/22.5°phase shifter,and using the reflective structure to design the 45°/90°/180°phase shifter.And then,in the research process,we simulate various schematic circuits by Agilent ADS software. Based on the ideal optimization results above,we layout the schematic circuit,and optimize layout circuit parameter.Finally,by selecting one of the programs,we produce and test the 5 bits multi-band MMIC digital phase shifter,working in the frequency range of 6～18GHz. The test data shows that the test results accord the design result.
The test datas are as follows:in the working frequency,the error of 11.25°bit is less than 1.65°;the error of 22.5°bit is less than 2.4°;the error of 45°bit is less than 4.1°;the error of 90°bit is less than 9.2°;the error of 180°bit is less than 8°.The insertion loss is restriction in the range of 7.5dB～11.8dB,input and output VSWR is less than 2.5.The area of multi-band MMIC 5-bits digital phase shifter is 3.555mm×4.055mm×0.1mm.
根据本课题研究的单片多倍频程数字移相器的要求,从电路原理、结构特点、指标要求、尺寸要求等方面综合考虑,重点针对高/低通滤波器拓扑与反射型拓扑做了分析和研究。依据分析、比较的结果确定最佳方案,最后对6～18GHz的多频段数字移相器进行了设计。
本文还对MMIC电路中元器件的建模进行了简要介绍。MMIC电路中无源元件和有源器件形式多样,需要采用合适的方法对相关元器件进行建模,即电路模型参数提取。设计过程中,采用工程建模方法对电路中的元器件和控制器件(PHEMT)建立了等效电路模型。整个建模过程是紧密结合MMIC工艺线提供的有关参数进行的,从而保证了设计的可信性和准确性。
本文首先对移相器、MMIC等概念以及应用背景进行了简单的介绍。然后对各种类型的移相器进行了分析,根据上述结果确定了5.625°/11.25°/22.5°相移位采用高/低通滤波器型拓扑,45°/90°/180°采用反射型拓扑的设计方案。接着,利用Agilent公司的ADS软件,分别对各个相移位的原理图电路进行了的优化。然后根据电性能优化结果进行版图设计,并结合版图进行仿真优化。最后,我们选取了最优的方案对6～18GHz工作频段内5位MMIC数字移相器进行了流片和测试。测试结果表明,设计与测试结果基本吻合。
本课题设计的多倍频程5位MMIC数字移相器实物测试结果显示:在6～18GHz的工作频率内,11.25°相移位的相移误差＜1.65°;22.5°相移位的相移误差＜2.4°;45°相移位的相移误差＜4.1°;90°相移位的相移误差＜9.2°;180°相移位的相移误差＜8°。插入损耗保持在7.5dB～11.8dB的范围内,输入端与输出端的驻波比均小于2.5。五位数字移相器的芯片面积为3.555 mm×4.055 mm×0.1 mm。
Digital phase shifter,based on RF monolithic microwave integrated circuit(MMIC) technology,is the core component of the transmit/receive(T/R) in the modern phased array radar system.The performance of the phase shifter has a direct impact on phased array radar system.This article introduces the research about multi-band MMIC digital phase shifter.
Based on the requirement of this research,we carefully analyze the high/low pass structure and the reflective structure from the circuit theory,the character of the topology,the requirement of the specification,and the requirement of the size.According the result above, we determine the best program for designing the 6～18 GHz multi-band digital phase shifter.
In this article,we also briefly introduce the knowledge about modeling the components which are used in the MMIC circuit.The passive component and the active component,in the circuit,have many forms,so we should model the component in right way,which is usually called circuit model parameter extraction.In the design process,we establish the equivalent model for the components and the control devices(PHEMT) in the circuit by the application model theory.Through the model process above,we could guarantee the correctness of the design.
At the beginning of the article,we briefly introduce the concepts of phase shifter,MMIC and the application background.And in the middle of the article,we carefully analyze various types phase shifters and get some results,after summing up the characters of the various phase shifters circuit topology and the basic principles,we finally determine the design program,for instance,using the high/low pass structure to design the 5.625°/11.25°/22.5°phase shifter,and using the reflective structure to design the 45°/90°/180°phase shifter.And then,in the research process,we simulate various schematic circuits by Agilent ADS software. Based on the ideal optimization results above,we layout the schematic circuit,and optimize layout circuit parameter.Finally,by selecting one of the programs,we produce and test the 5 bits multi-band MMIC digital phase shifter,working in the frequency range of 6～18GHz. The test data shows that the test results accord the design result.
The test datas are as follows:in the working frequency,the error of 11.25°bit is less than 1.65°;the error of 22.5°bit is less than 2.4°;the error of 45°bit is less than 4.1°;the error of 90°bit is less than 9.2°;the error of 180°bit is less than 8°.The insertion loss is restriction in the range of 7.5dB～11.8dB,input and output VSWR is less than 2.5.The area of multi-band MMIC 5-bits digital phase shifter is 3.555mm×4.055mm×0.1mm.
引文
[1]吴斌.S波段五位数字移相器研究.电子科技大学硕士学位论文,2006
[2]清华大学《微带电路》编写组.微带电路北京:人民邮电出版社,1976:243-24
[3]陈振成 固态有源阵收/发组件的研制.现代雷达,1993,15(3):39-43
[4]李浩模 单片微波集成电路T/R组件.现代雷达,1993,15(2):65-69
[5]王琳.数字移相器的小型化研究.电子科技大学硕士学位论文,2002
[6]Ian Robertson,Stepan Lucyszyn.RFIC.and.MMIC.design.and.technology.p1
[7]张孝.微波集成电路研究.四川大学硕士论文,1998
[8]吴群.MMIC—单片微波集成电路技术.2003,p1.
[9]陶正炼.超宽带6位MMIC数字移相器的研究与设计.南京理工大学硕士学位论文,2008
[10]李静.T/R模块的发展现状及趋势.电子13所,1998
[11]戴永胜,徐世晖,李辉等.GaAs MMIC多位数字移相器的CAD及其研究.98全国第七届“微波集成电路及工艺”学木会论文集,1998
[12]Dong-Woo Kang,Songcheol Hong.A 4-bit CMOS Phase Shifter Using Distributed Active Switches.IEEE Transactions on Microwave Theory and Techniques,VOL.55,NO.7,JULY 2007
[13]Dong-Woo Kang,Hoseon Lee,Kyong Hee Lee,Soon-Ik Jeon,and Songcheol Hong.Design of a Phase Shifter with Improved Bandwidth using Embedded Series-Shunt Switches.IEEE
[14]Zhiyang Liu,,Jason C.Midkiff,Haiyong Xu,Thomas W.Crowe,and Robert M.Weikle Ⅱ.Broad-Band 180 Phase Shifters Using Integrated Submillimeter Wave Schottky Diodes.IEEE Transactions on Microwave Theory and Techniques,VOL.53,NO.9,SEPTEMBER 2005
[15]Dai Yongsheng,Chen Xiaojian,Chen Tangsheng,Yu Tufa,Liu Lin,Lin Jinting.A Multi-Octave Five-Bit MMIC Phase Shifter With Compatible Different Control Signals.Nanjing Electronic Devices Institute.2002
[16]薛正辉.微波固态电路.北京:北京理工大学,2002:271-30
[17]廖承恩.微波技术基础.西安电子科技出版社,1994
[18]中国集成电路大全编委会.微波集成电路.国防工业出版社,1995
[19]Yongsheng D,Tangsheng C,Lijie Y,et al.A novel multi-octave 22.5 degree and11.25degree MMIC phase shifter with a sharing lange coupler.Journal of Functional Material and Devices,2000,6(3):137-140
[20]I.J.Bahl and K.C.Gufta.Design of Loaded-Line p-i-n Diode Phase Shifter Circuits.IEEE Transactions on Microwave Theory and Techniques,vol.MIT-28,NO,3,MARCH 1980
[21]Kobayashi,K.W.Tran,L,Okl,A.K.,and Streit,D.C.:'A 50 MHz-30GHz broadband coplanar waveguide SPDT PIN diode switch with 45-dB isolation',IEEE Microve and Guided Wave Letters,1995,pp.56-58
[22]王志刚.中频、微波数字移相器研究.电子科技大学硕士论文,2006
[23]Carver R V.Microwave semiconductor control devices.IEEE Transactions on Microwave Theory and Techniques,1979,MTT-27:523-529
[24]J.Rogers,R.Bhatia.A 6 TO 20 GHz Planar Balun Usings a wilkison Divider and Lange Couplers.1991
[25]L.Billonnet-B,Jarry-P,Guillon.Design Concept For Microwave Recursive and Ransversal Filters Using Lange Couplers.1992
[26]Gallone.Brehm,Randalle.Lehmann.Monolithic GaAs Lange Coupler at X-Band.IEEE Transactions on Electron Devices,VOL.ED-28,NO.2,FEBRUARY 1981
[27]Constantine Andricos,Inder J.Bahl,Senior Member,IEEE,and Edwardl.Griffin,Member IEEE.C-band 6-bit GaAs monolithic phase shifter.IEEE Transactions on Microwave Theory and Techniques,VOL.MIT-33,NO.12,DECEMOER 1985
[28]吴海东,庄志强,莫郁薇,张增照,聂国健.GaAs MMIC可靠性研究与进展,电子5所.电子产品可靠性与环境试验,Feb 2001
[29]戴永胜,方大纲.GaAs MMIC开关MESFET电路建模技术研究.南京理工大学学报,Oct 2006
[30]陈雪军,徐世珲,岑元飞等.GaAs微波单片集成电路中器件的精确建模.固体电子学研究与进展,May 2001
[31]黄志忠,殷晓星,崔铁军,洪伟.砷化镓衬底上螺旋电感的建模和分析.微波学报,Apr 2005
[32]Jansen,R.H.,Arnold,R.G.;Eddison,I.G.A comprehensive CAD approach to the design of MMICs up to millimeter-wave frequencies.1988,Page(s):208-219
[33]谢媛媛,高学邦,魏洪涛,王绍东,刘志军.GaAs PHEMT开关模型的研究.中国电子科技集团公司第十三研究所.
[34]陈新宇,徐全胜,陈继义,陈效建,郝西萍,李拂晓,蒋幼泉.宽带GaAs MESFET 开关模型.南京电子器件研究所,May 2003
[35]吴洪江,高学邦,任怀龙等.GaAs IC CAD及其在通信电路中的应用技术.半导体 情报,Feb 2000
[36]刘红侠,郑雪峰,郝跃等.GaAs PHEMT器件的退化特性及可靠性表征方法.半导体学报.2004,25(1):77-80
[37]李拂晓,郑华,郑惟彬,林罡,吴振海,黄庆安.砷化镓0.5um PHEMT开关标准工艺研究.东南大学MEMS教育部重点实验室
[38]Ross,svensson and Lugli(Eds):'Proceedings of the NATO Advanced Study Institude on Pseudomorphic HEMT technology and applications'.Kluwer Academic Publishers,1996
[39]申华军,杨瑞霞,高学邦,王同祥.GaAs MESFET开关的设计和建模.河北工业大学学报.April 2003
[40]戴永胜,陈堂胜,俞士法,陈新宇,郝西平,陈效建,林金庭.几种新颖的超小型1～26GHz高性能11.25°GaAs MMIC移相器.2002全国第九届微波集成电路与移动通信学术年会.南京智达康无线通信科技有限公司,南京电子器件研究所
[41]Garver R V.Broad-band diode phase shifter.IEEE Transactions on Microwave Theory and Techniques,1972,MTT-20:314-323
[42]Ayasli Y,Platzker A,Vorhaus J,et al.A monolithic single chip X-band four-bit phase shifter IEEE Transactions on Microwave Theory and Techniques,1982,MTT-30(12):2201-2206
[43]Andricos C,Bahl I J,Griffin E L.C-band 6-bit monolithic phase shifter.IEEE Transactions on Microwave Theory and Techniques,1985,MTT-33(12):1591-1596
[44]Campbell C P,Brown S A.A compact 5-bit phase shifter MMIC for K-band satellite communication systems.IEEE Transactions on Microwave Theory and Techniques,2000,MU-48(12):2652-2656
[45]Maloney P R,Mezger M A,Sasonoff J P.L-band GaAs transceiver components.IEEE GaAs IC Symposium,1985:121-124
[46]吴群.硕士生微波学科前沿动态系列讲座介绍.哈工大微波专业.2003
[2]清华大学《微带电路》编写组.微带电路北京:人民邮电出版社,1976:243-24
[3]陈振成 固态有源阵收/发组件的研制.现代雷达,1993,15(3):39-43
[4]李浩模 单片微波集成电路T/R组件.现代雷达,1993,15(2):65-69
[5]王琳.数字移相器的小型化研究.电子科技大学硕士学位论文,2002
[6]Ian Robertson,Stepan Lucyszyn.RFIC.and.MMIC.design.and.technology.p1
[7]张孝.微波集成电路研究.四川大学硕士论文,1998
[8]吴群.MMIC—单片微波集成电路技术.2003,p1.
[9]陶正炼.超宽带6位MMIC数字移相器的研究与设计.南京理工大学硕士学位论文,2008
[10]李静.T/R模块的发展现状及趋势.电子13所,1998
[11]戴永胜,徐世晖,李辉等.GaAs MMIC多位数字移相器的CAD及其研究.98全国第七届“微波集成电路及工艺”学木会论文集,1998
[12]Dong-Woo Kang,Songcheol Hong.A 4-bit CMOS Phase Shifter Using Distributed Active Switches.IEEE Transactions on Microwave Theory and Techniques,VOL.55,NO.7,JULY 2007
[13]Dong-Woo Kang,Hoseon Lee,Kyong Hee Lee,Soon-Ik Jeon,and Songcheol Hong.Design of a Phase Shifter with Improved Bandwidth using Embedded Series-Shunt Switches.IEEE
[14]Zhiyang Liu,,Jason C.Midkiff,Haiyong Xu,Thomas W.Crowe,and Robert M.Weikle Ⅱ.Broad-Band 180 Phase Shifters Using Integrated Submillimeter Wave Schottky Diodes.IEEE Transactions on Microwave Theory and Techniques,VOL.53,NO.9,SEPTEMBER 2005
[15]Dai Yongsheng,Chen Xiaojian,Chen Tangsheng,Yu Tufa,Liu Lin,Lin Jinting.A Multi-Octave Five-Bit MMIC Phase Shifter With Compatible Different Control Signals.Nanjing Electronic Devices Institute.2002
[16]薛正辉.微波固态电路.北京:北京理工大学,2002:271-30
[17]廖承恩.微波技术基础.西安电子科技出版社,1994
[18]中国集成电路大全编委会.微波集成电路.国防工业出版社,1995
[19]Yongsheng D,Tangsheng C,Lijie Y,et al.A novel multi-octave 22.5 degree and11.25degree MMIC phase shifter with a sharing lange coupler.Journal of Functional Material and Devices,2000,6(3):137-140
[20]I.J.Bahl and K.C.Gufta.Design of Loaded-Line p-i-n Diode Phase Shifter Circuits.IEEE Transactions on Microwave Theory and Techniques,vol.MIT-28,NO,3,MARCH 1980
[21]Kobayashi,K.W.Tran,L,Okl,A.K.,and Streit,D.C.:'A 50 MHz-30GHz broadband coplanar waveguide SPDT PIN diode switch with 45-dB isolation',IEEE Microve and Guided Wave Letters,1995,pp.56-58
[22]王志刚.中频、微波数字移相器研究.电子科技大学硕士论文,2006
[23]Carver R V.Microwave semiconductor control devices.IEEE Transactions on Microwave Theory and Techniques,1979,MTT-27:523-529
[24]J.Rogers,R.Bhatia.A 6 TO 20 GHz Planar Balun Usings a wilkison Divider and Lange Couplers.1991
[25]L.Billonnet-B,Jarry-P,Guillon.Design Concept For Microwave Recursive and Ransversal Filters Using Lange Couplers.1992
[26]Gallone.Brehm,Randalle.Lehmann.Monolithic GaAs Lange Coupler at X-Band.IEEE Transactions on Electron Devices,VOL.ED-28,NO.2,FEBRUARY 1981
[27]Constantine Andricos,Inder J.Bahl,Senior Member,IEEE,and Edwardl.Griffin,Member IEEE.C-band 6-bit GaAs monolithic phase shifter.IEEE Transactions on Microwave Theory and Techniques,VOL.MIT-33,NO.12,DECEMOER 1985
[28]吴海东,庄志强,莫郁薇,张增照,聂国健.GaAs MMIC可靠性研究与进展,电子5所.电子产品可靠性与环境试验,Feb 2001
[29]戴永胜,方大纲.GaAs MMIC开关MESFET电路建模技术研究.南京理工大学学报,Oct 2006
[30]陈雪军,徐世珲,岑元飞等.GaAs微波单片集成电路中器件的精确建模.固体电子学研究与进展,May 2001
[31]黄志忠,殷晓星,崔铁军,洪伟.砷化镓衬底上螺旋电感的建模和分析.微波学报,Apr 2005
[32]Jansen,R.H.,Arnold,R.G.;Eddison,I.G.A comprehensive CAD approach to the design of MMICs up to millimeter-wave frequencies.1988,Page(s):208-219
[33]谢媛媛,高学邦,魏洪涛,王绍东,刘志军.GaAs PHEMT开关模型的研究.中国电子科技集团公司第十三研究所.
[34]陈新宇,徐全胜,陈继义,陈效建,郝西萍,李拂晓,蒋幼泉.宽带GaAs MESFET 开关模型.南京电子器件研究所,May 2003
[35]吴洪江,高学邦,任怀龙等.GaAs IC CAD及其在通信电路中的应用技术.半导体 情报,Feb 2000
[36]刘红侠,郑雪峰,郝跃等.GaAs PHEMT器件的退化特性及可靠性表征方法.半导体学报.2004,25(1):77-80
[37]李拂晓,郑华,郑惟彬,林罡,吴振海,黄庆安.砷化镓0.5um PHEMT开关标准工艺研究.东南大学MEMS教育部重点实验室
[38]Ross,svensson and Lugli(Eds):'Proceedings of the NATO Advanced Study Institude on Pseudomorphic HEMT technology and applications'.Kluwer Academic Publishers,1996
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