超宽带低相移单片六位微波数字衰减器的设计与研究
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摘要
超宽带低相移单片微波数字衰减器在宽带电子对抗、相控阵雷达系统和宽带微波合成扫频信号发生器等仪器仪表中都有着广泛的应用。本文研究的超宽带单片六位微波数字衰减器插入相移小、衰减精度高,采用该电路将使相应的系统省去为校准幅度和相位所增加的额外电路,降低成本,提高可靠性,并且这种电路可以编程控制,易与计算机技术兼容。
本论文主要介绍了2～18GHz超宽带低相移六位MMIC数字衰减器的原理、电路的设计、仿真优化及版图设计。文中首先探讨了微波单片集成电路中控制器件GaAsPHEMT开关的工作机理,模型的建立及电路模型参数的提取。然后介绍了数字衰减器的基本理论,并分析了几种典型数字衰减器电路拓扑结构(如T型、PI型、桥T型、开关路径型等)的工作原理。
设计工具采用了Advanced Design System 2004(ADS2004),首先根据不同的衰减量确定合适的数字衰减器的电路拓扑结构,根据衰减量计算出该拓扑结构中的电阻初值,然后联接实际的微带电路对衰减精度、插入损耗、相对插入相移和输入/输出驻波比进行优化。每一位优化达到设计指标后,再将每位级联构成六位数字衰减器,进行总体仿真优化。完成电路仿真优化后初步生成每个衰减位的版图,最后进行版图的级联和设计,使其结构紧凑、占用芯片面积小、使用方便。
最后设计的超宽带单片六位数字衰减器参考态插入损耗低、衰减精度高、插入相移小、输入/输出驻波低、尺寸小。在工作频带2～18GHz内,最大衰减量为31.5dB、衰减步进为0.5dB;参考态插入损耗:＜3.6dB;衰减精度典型值:±0.3dB;总插入相移:-2.018°/+2.367°;输入/输出驻波比典型值:1.30;芯片尺寸:2.93mm×1.02mm×0.1mm。各项性能均优于设计要求。
Ultra broadband MMIC microwave digital attenuators with low insertion phase shift are widely used in broadband electronic countermeasures and phased-array radar scanning systems as well as in broadband microwave signal generators, and other synthetic frequency sweep instrumentations. The MMIC 6-bit digital attenuator in this paper with low insertion phase shift, high attenuation accuracy applied in system will allow the system to omit the additional circuits for calibration ,so the costs will reduced and the reliability can be improved. The digital attenuator can be controlled by program, so it's easily compatible with computer technology.
This paper mainly introduced the circuit design, layout design and simulation results of this ultra broadband 2-18 GHz MMIC 6-bit digital attenuator with low phase shift. First, the operation principle of PHEMT switch and the small-signal model parameter extraction method for PHEMT modeling are presented in the paper. Then the author described the basic theories of digital attenuators and contrasted the principle of several typical topologies for attenuators (T attenuators, PI attenuators, T-bridge attenuators, switch path attenuators).
In this design, Advanced Design System 2004(ADS2004) is used as the EDA tool. After the appropriate topology is selected for each bit and initial values of the ideal resistors are calculated for different attenuation, they are all put in integrated circuits with many micro strip lines. Proper optimized functions are chosen for all optimized goals such as attenuation accuracy, insertion loss, insertion phase shift and input/output VSWR. While each bit has achieved their best states, they can be cascaded for simulation. In layout design, the chip must have compact configuration, small chip size and be easy to use.
The final ultra broadband MMIC 6-bit digital attenuator has many excellent characteristics such as low referenced insertion loss, high attenuation accuracy, small insertion phase shift, low input/output VSWR, small chip size. In the operation bandwidth 2-18GHz, the attenuator has 31.5dB dynamic range stepped by 0.5dB; referenced insertion loss: <3.6dB; typical attenuation accuracy:±0.3dB; insertion phase shift: -2.018°/+2.367°; typical input/output VSWR: 1.30; chip size: 2.93mm×1.02mm×0.1mm. All these performances are better than the design requirements.
本论文主要介绍了2～18GHz超宽带低相移六位MMIC数字衰减器的原理、电路的设计、仿真优化及版图设计。文中首先探讨了微波单片集成电路中控制器件GaAsPHEMT开关的工作机理,模型的建立及电路模型参数的提取。然后介绍了数字衰减器的基本理论,并分析了几种典型数字衰减器电路拓扑结构(如T型、PI型、桥T型、开关路径型等)的工作原理。
设计工具采用了Advanced Design System 2004(ADS2004),首先根据不同的衰减量确定合适的数字衰减器的电路拓扑结构,根据衰减量计算出该拓扑结构中的电阻初值,然后联接实际的微带电路对衰减精度、插入损耗、相对插入相移和输入/输出驻波比进行优化。每一位优化达到设计指标后,再将每位级联构成六位数字衰减器,进行总体仿真优化。完成电路仿真优化后初步生成每个衰减位的版图,最后进行版图的级联和设计,使其结构紧凑、占用芯片面积小、使用方便。
最后设计的超宽带单片六位数字衰减器参考态插入损耗低、衰减精度高、插入相移小、输入/输出驻波低、尺寸小。在工作频带2～18GHz内,最大衰减量为31.5dB、衰减步进为0.5dB;参考态插入损耗:＜3.6dB;衰减精度典型值:±0.3dB;总插入相移:-2.018°/+2.367°;输入/输出驻波比典型值:1.30;芯片尺寸:2.93mm×1.02mm×0.1mm。各项性能均优于设计要求。
Ultra broadband MMIC microwave digital attenuators with low insertion phase shift are widely used in broadband electronic countermeasures and phased-array radar scanning systems as well as in broadband microwave signal generators, and other synthetic frequency sweep instrumentations. The MMIC 6-bit digital attenuator in this paper with low insertion phase shift, high attenuation accuracy applied in system will allow the system to omit the additional circuits for calibration ,so the costs will reduced and the reliability can be improved. The digital attenuator can be controlled by program, so it's easily compatible with computer technology.
This paper mainly introduced the circuit design, layout design and simulation results of this ultra broadband 2-18 GHz MMIC 6-bit digital attenuator with low phase shift. First, the operation principle of PHEMT switch and the small-signal model parameter extraction method for PHEMT modeling are presented in the paper. Then the author described the basic theories of digital attenuators and contrasted the principle of several typical topologies for attenuators (T attenuators, PI attenuators, T-bridge attenuators, switch path attenuators).
In this design, Advanced Design System 2004(ADS2004) is used as the EDA tool. After the appropriate topology is selected for each bit and initial values of the ideal resistors are calculated for different attenuation, they are all put in integrated circuits with many micro strip lines. Proper optimized functions are chosen for all optimized goals such as attenuation accuracy, insertion loss, insertion phase shift and input/output VSWR. While each bit has achieved their best states, they can be cascaded for simulation. In layout design, the chip must have compact configuration, small chip size and be easy to use.
The final ultra broadband MMIC 6-bit digital attenuator has many excellent characteristics such as low referenced insertion loss, high attenuation accuracy, small insertion phase shift, low input/output VSWR, small chip size. In the operation bandwidth 2-18GHz, the attenuator has 31.5dB dynamic range stepped by 0.5dB; referenced insertion loss: <3.6dB; typical attenuation accuracy:±0.3dB; insertion phase shift: -2.018°/+2.367°; typical input/output VSWR: 1.30; chip size: 2.93mm×1.02mm×0.1mm. All these performances are better than the design requirements.
引文
[1]申华军、陈延湖等.GaAs MMIC用无源元件的模型.半导体学报,第27卷第10期,2006年10月
[2]吴群.单片微波集成电路技术的军事应用.硕士生微波学科前沿动态系列讲座介绍,2003
[3]罗小勇.PHEMT MMIC宽带单片功率放大器设计研究.电子科技大学硕士论文,2005
[4]张海峰.X波段低相移单片六位数字衰减器的研究.南京理工大学硕士论文,2007
[5]程知群.砷化镓微波单片集成电路研究.中国科学院上海冶金研究研究所,2000
[6]王志功、沈永朝.集成电路设计基础.北京:电子工业出版社,2004.5
[7]陈雪军、徐世晖等.GaAs微波单片集成电路中的精确建模.固体电子学研究与进展,第21卷第2期,2001.5
[8]陈新宇、陈继义等.GaAs MESFET开关模型.微波学报,第18卷第2期,2002.6
[9]谢媛媛、高学邦等.GaAs PHEMT开关模型的研究.半导体学报,第31卷第3期,2006.3
[10]戴永胜、方大纲.GaAs MMIC开关MESFET电路建模技术研究.南京理工大学学报,第30卷第5期,2006.10
[11]顾继慧.微波技术.北京:科学出版社,2004.2
[12]Ian Robertson、Stepan Lucyszyn编著,文光俊等译.单片射频集成电路技术与设计.北京:电子工业出版社,2007.2
[13]顾墨琳、林守远.微波集成电路技术-回顾与展望.微波学报,Vol.16,N0.3,Sep,2000
[14]陈新宇、徐全胜等.宽带GaAs MESFET开关模型.固体电子学研究与进展,Vol.23,No.2,May 2003
[15]Yong-Sheng Dai,Da-Gang Fang,Yong-Xin Guo."A Novel UWB(0.045-50 GHz)Digital Analog Compatible MMIC Variable Attenuator with Low Insertion Phase Shift and Large Dynamic Range," IEEE Microwave and Wireless Components Letters,Vol.17,No.1,January 2007
[16]L.Sjogren,D.Ingrain,M.Biedenbender,R.Lai,B.Allen,and K.Hubbard,"A low phase-error 44-GHz HEMT attenuator," IEEE Microw.Wireless Compon.Lett,Vol.8,No.5,pp.194-195,May 1998.
[17]B.Khabbaz,A.Pospishil,and H.R Singh,"DC-to-20-GHz MMIC multibit digital attenuators with on-chip TTL control," IEEE J.Solid-State Circuits,Vol.27,No.10,pp.1457-1462,Oct.1992.
[18]D.Krafcsik,F.Ali,and S.Bishop,"Broadband,low-loss 5-bit and 6-bit digital attenuators," in IEEE MTT-S Dig.,May 16-20,1995,Vol.3,pp.1627-1630.
[19]F.J.McGrath and R.G.Pratt,"An ultra broadband DC-12 GHz 4-bit GaAs monolithic digital attenuator," in Proc.13th Annu.Gallium Arsenide Integr.Circuit Symp,Oct.20-23,1991,Vol.1,pp.247-250.
[20]J.Inkwon,Y.S.Noh,and I.Yom,"Ultra broadband dc to 40 GHz 5-bit pHEMT MMIC digital attenuator," in Proc.Eur.Microw.Conf.,Oct.4-6,2005,Vol.2,pp.995-998.
[21]Triquint Semiconductor:0.5-18GHz 5-Bit Digital Attenuator TGL6425-SCC,datasheet,1998.
[22]M/A-COM:2-20 GHz 5-bit Digital Attenuator MAATGM0004-DIE,datasheet,2003.
[23]戴永胜、陈堂胜等.一种新颖的DC-50GHz低插入相移MMIC可变衰减器.固体电子学研究与进展,Vol.23,No.2,May,2003
[24]王会智、沈亚等.一种新颖的4bit和5bit超宽带GaAs单片数字衰减器.半导体学报,Vol.26,No.3,Mar,2005
[25]J.C.Sarkissian,M.Delmond,E.Laporte,E.Rogeaux and M.Soulard,"A Ku-band 6-bit digital attenuator with integrated serial to parallel converter," IEEE MTT-S Int.Microwave Symp.Dig.,Vol.4,pp.1915-1918,June 1999.
[26]Bookhan Technology:0.5-16GHz 6-bit digital attenuator P35-4304-000-200,datasheet,2003.
[27]Caswell..DC-16GHz 5 bit digital attenuator P35-4307-000-200,datasheet
[28]Mimix:DC-18.0 GHz GaAs MMIC 5-Bit Digital AttenuatorA1000-BD,datesheet,2007
[29]Hittite:DC-13GHz 0.5dB LSB GaAs MMIC 6-Bit Digital Attenuator HMC424LP3,datesheet,2006
[30]李效白.砷化镓微波功率场效应晶体管及其集成电路.北京:科学社会出版社,1998.2
[31]顾其诤、项家桢、袁孝康.微波集成电路设计.北京:清华大学出版社,1975.
[32]Stephen A.Campbell著,曾莹、严利人等译.微电子制造科学原理与工程技术(第二版).北京:电子工业出版社,2003.1
[33]张亚非等.半导体集成电路制造技术.北京:高等教育出版社,2006.6
[34]华北集成电路设计有限公司:0.5-18GHz GaAs MMIC 6位数控衰减器芯片 NC1306-812,datasheet,2007
[35]高建军.场效应晶体管射频微波建模技术.北京:电子工业出版社,2007.1
[36]李拂晓.亚微米GaAs PHEMT器件及其小信号建模.东南大学博士论文,2005.9
[37]谢自力、邱凯等.PHEMT结构材料及器件.微纳电子技术,No.2,2002
[38]李拂晓、郑华等.砷化镓0.5μm PHEMT开关标准工艺研究.固体电子学研究与进展,Vol.26,No.4,Nov,2006.
[39]王会智、李拂晓.高性能超宽带单片数字衰减器设计与实现.半导体学报,Vol.27,No.6.June.2006
[40]Takasu,H.;Sakakibara,C.;Okumura,M.;Kamihashi,S.;"S-Band MMIC Digital Attenuator with Small Phase Variation",Microwave Conference,1999 Asia Pacific,Volume 2,30 Nov.-3 Dec.1999 Page(s):421-424 vol.2
[41]O.V.Stukach,"Variable Attenuator with Low Phase Shift",Proceedings of the 9th European Conference on Wireless Technologv.September 2006.
[42]吴亮.空间用微波多功能MMIC研究.南京理工大学硕士论文,2007
[43]Inder Bahl,Prakash Bhartia著,郑新、赵玉洁等译.微波固态电路设计(第二版).北京:电子工业出版社,2006
[44]李洪芹.赝配高速电子迁移率晶体管及其微波单片集成电路研究.中国科学院上海冶金研究所博士论文,2001
[45]刘琳、陈堂胜、戴永胜等.一种X波段GaAs MMIC五位数字衰减器.固体电子学研究与进展,Vol.20,No.4,Nov,2000
[2]吴群.单片微波集成电路技术的军事应用.硕士生微波学科前沿动态系列讲座介绍,2003
[3]罗小勇.PHEMT MMIC宽带单片功率放大器设计研究.电子科技大学硕士论文,2005
[4]张海峰.X波段低相移单片六位数字衰减器的研究.南京理工大学硕士论文,2007
[5]程知群.砷化镓微波单片集成电路研究.中国科学院上海冶金研究研究所,2000
[6]王志功、沈永朝.集成电路设计基础.北京:电子工业出版社,2004.5
[7]陈雪军、徐世晖等.GaAs微波单片集成电路中的精确建模.固体电子学研究与进展,第21卷第2期,2001.5
[8]陈新宇、陈继义等.GaAs MESFET开关模型.微波学报,第18卷第2期,2002.6
[9]谢媛媛、高学邦等.GaAs PHEMT开关模型的研究.半导体学报,第31卷第3期,2006.3
[10]戴永胜、方大纲.GaAs MMIC开关MESFET电路建模技术研究.南京理工大学学报,第30卷第5期,2006.10
[11]顾继慧.微波技术.北京:科学出版社,2004.2
[12]Ian Robertson、Stepan Lucyszyn编著,文光俊等译.单片射频集成电路技术与设计.北京:电子工业出版社,2007.2
[13]顾墨琳、林守远.微波集成电路技术-回顾与展望.微波学报,Vol.16,N0.3,Sep,2000
[14]陈新宇、徐全胜等.宽带GaAs MESFET开关模型.固体电子学研究与进展,Vol.23,No.2,May 2003
[15]Yong-Sheng Dai,Da-Gang Fang,Yong-Xin Guo."A Novel UWB(0.045-50 GHz)Digital Analog Compatible MMIC Variable Attenuator with Low Insertion Phase Shift and Large Dynamic Range," IEEE Microwave and Wireless Components Letters,Vol.17,No.1,January 2007
[16]L.Sjogren,D.Ingrain,M.Biedenbender,R.Lai,B.Allen,and K.Hubbard,"A low phase-error 44-GHz HEMT attenuator," IEEE Microw.Wireless Compon.Lett,Vol.8,No.5,pp.194-195,May 1998.
[17]B.Khabbaz,A.Pospishil,and H.R Singh,"DC-to-20-GHz MMIC multibit digital attenuators with on-chip TTL control," IEEE J.Solid-State Circuits,Vol.27,No.10,pp.1457-1462,Oct.1992.
[18]D.Krafcsik,F.Ali,and S.Bishop,"Broadband,low-loss 5-bit and 6-bit digital attenuators," in IEEE MTT-S Dig.,May 16-20,1995,Vol.3,pp.1627-1630.
[19]F.J.McGrath and R.G.Pratt,"An ultra broadband DC-12 GHz 4-bit GaAs monolithic digital attenuator," in Proc.13th Annu.Gallium Arsenide Integr.Circuit Symp,Oct.20-23,1991,Vol.1,pp.247-250.
[20]J.Inkwon,Y.S.Noh,and I.Yom,"Ultra broadband dc to 40 GHz 5-bit pHEMT MMIC digital attenuator," in Proc.Eur.Microw.Conf.,Oct.4-6,2005,Vol.2,pp.995-998.
[21]Triquint Semiconductor:0.5-18GHz 5-Bit Digital Attenuator TGL6425-SCC,datasheet,1998.
[22]M/A-COM:2-20 GHz 5-bit Digital Attenuator MAATGM0004-DIE,datasheet,2003.
[23]戴永胜、陈堂胜等.一种新颖的DC-50GHz低插入相移MMIC可变衰减器.固体电子学研究与进展,Vol.23,No.2,May,2003
[24]王会智、沈亚等.一种新颖的4bit和5bit超宽带GaAs单片数字衰减器.半导体学报,Vol.26,No.3,Mar,2005
[25]J.C.Sarkissian,M.Delmond,E.Laporte,E.Rogeaux and M.Soulard,"A Ku-band 6-bit digital attenuator with integrated serial to parallel converter," IEEE MTT-S Int.Microwave Symp.Dig.,Vol.4,pp.1915-1918,June 1999.
[26]Bookhan Technology:0.5-16GHz 6-bit digital attenuator P35-4304-000-200,datasheet,2003.
[27]Caswell..DC-16GHz 5 bit digital attenuator P35-4307-000-200,datasheet
[28]Mimix:DC-18.0 GHz GaAs MMIC 5-Bit Digital AttenuatorA1000-BD,datesheet,2007
[29]Hittite:DC-13GHz 0.5dB LSB GaAs MMIC 6-Bit Digital Attenuator HMC424LP3,datesheet,2006
[30]李效白.砷化镓微波功率场效应晶体管及其集成电路.北京:科学社会出版社,1998.2
[31]顾其诤、项家桢、袁孝康.微波集成电路设计.北京:清华大学出版社,1975.
[32]Stephen A.Campbell著,曾莹、严利人等译.微电子制造科学原理与工程技术(第二版).北京:电子工业出版社,2003.1
[33]张亚非等.半导体集成电路制造技术.北京:高等教育出版社,2006.6
[34]华北集成电路设计有限公司:0.5-18GHz GaAs MMIC 6位数控衰减器芯片 NC1306-812,datasheet,2007
[35]高建军.场效应晶体管射频微波建模技术.北京:电子工业出版社,2007.1
[36]李拂晓.亚微米GaAs PHEMT器件及其小信号建模.东南大学博士论文,2005.9
[37]谢自力、邱凯等.PHEMT结构材料及器件.微纳电子技术,No.2,2002
[38]李拂晓、郑华等.砷化镓0.5μm PHEMT开关标准工艺研究.固体电子学研究与进展,Vol.26,No.4,Nov,2006.
[39]王会智、李拂晓.高性能超宽带单片数字衰减器设计与实现.半导体学报,Vol.27,No.6.June.2006
[40]Takasu,H.;Sakakibara,C.;Okumura,M.;Kamihashi,S.;"S-Band MMIC Digital Attenuator with Small Phase Variation",Microwave Conference,1999 Asia Pacific,Volume 2,30 Nov.-3 Dec.1999 Page(s):421-424 vol.2
[41]O.V.Stukach,"Variable Attenuator with Low Phase Shift",Proceedings of the 9th European Conference on Wireless Technologv.September 2006.
[42]吴亮.空间用微波多功能MMIC研究.南京理工大学硕士论文,2007
[43]Inder Bahl,Prakash Bhartia著,郑新、赵玉洁等译.微波固态电路设计(第二版).北京:电子工业出版社,2006
[44]李洪芹.赝配高速电子迁移率晶体管及其微波单片集成电路研究.中国科学院上海冶金研究所博士论文,2001
[45]刘琳、陈堂胜、戴永胜等.一种X波段GaAs MMIC五位数字衰减器.固体电子学研究与进展,Vol.20,No.4,Nov,2000