超宽带单片五位数字衰减器的研究
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摘要
随着科技的进步,通信系统不断更新换代,通信产品也随之不断的向小型化、低功耗、高可靠性等方向发展,而单片微波集成电路(MMIC)具有小型紧凑、稳定性好、抗干扰能力强、产品性能一致性好和批量生产成本低等优势,因而在通信市场中占据越来越重要的地位。作为系统的重要组成部分,MMIC衰减器在宽带通信、微波无线电通信、雷达以及空间通信等电子设备中有着广泛的应用。
本论文主要介绍了超宽带五位MMIC数字衰减器的原理电路设计、仿真优化、版图设计、流片的在片测试及测试结果分析。
文章首先介绍了MMIC技术特点以及应用,其次陈述了MMIC衰减器的发展概况和研究意义,并对工艺特点以及几种基本衰减结构进行了讨论,再次具体介绍了此超宽带衰减器的设计过程:根据具体要求,选用最优的结构,采用MOMENTUM联合仿真优化法,分别设计出1dB、2dB、4dB、8dB、16dB衰减位,再通过级联整体仿真优化设计出了所需衰减器。由于所设计的电路还进行了流片验证并使用探针台做了在片测试,因而最后还对测试结果进行了全面分析,讨论了所做工作的意义与不足。
该五位MMIC数字衰减器的工作频段为5-38GHz,就作者所知,是国内见报道的同类产品中带宽最宽的。设计软件使用了ADS2006A系统,采用0.25um pHEMT工艺线实现。经流片测试,所设计衰减器性能良好,在工作频带内的衰减范围为31dB,衰减步进为1dB,具有较精确的衰减步进误差(1.0±0.4dB),小的插入损耗(<7dB)以及优良的回波损耗(>12dB),芯片尺寸仅为2.4mm×1.2mm×0.1mm,可以应用于军事电子对抗及民用通信中。
With the development of communication technology,communication systems are constantly upgrading. Communication products also are developing at many directions such as miniaturization、low-power and reliability. Due to its small size, good stability, capability, consistency and cheap in mass yield, Monolithic Microwave Integrated Circuit (MMIC) is becoming more and more important in the communication market. As the key component of system, attenuators are widely used in broadband communications, microwave radio communications, military radar, space communications and other electronic equipments.
This paper mainly introduces the circuit design, layout design, testing results and analysis of an ultra broadband MMIC 5-bit digital attenuator.
Firstly, this paper describes the characteristics of MMIC technology and application. Secondly, making a presentation of the development of MMIC attenuator and its significance, then discussed several basic structures for attenuator. Subsequently, specifically this paper introduces the design of this ultra-wideband attenuator: According to the specific requirements, we choose the best structure, using MOMENTUM co-simulation for optimization to design 1dB, 2dB, 4dB, 8dB, 16dB attenuation bit, and then achieve the desired attenuator by running simulation and optimization of the whole cascade circuit. Since the circuit has been taped-out and testing on board, finally we make a comprehensive analysis of the results and a discussion of the significance and shortcomings of our work.
In the design, Advanced Design System 2006(ADS2006) is used as the EDA tool. Finally, the 5-bit digital attenuator was taped out with 0.25um pHEMT process. It has a good performance and operates at 5GHz-38GHz, has 31 dB dynamic range stepped by 1 dB; reference insertion loss:<7 dB; attenuation increments are 1.0±0.4 dB; input and output return loss:>12 dB. The chip size is only 2.4mm×1.2mm×0.1mm. As far as I know, the bandwidth of the attenuator is the broadest one yet reported in domestic literatures. It can be used for military electronic counter measures and civilian communications.
本论文主要介绍了超宽带五位MMIC数字衰减器的原理电路设计、仿真优化、版图设计、流片的在片测试及测试结果分析。
文章首先介绍了MMIC技术特点以及应用,其次陈述了MMIC衰减器的发展概况和研究意义,并对工艺特点以及几种基本衰减结构进行了讨论,再次具体介绍了此超宽带衰减器的设计过程:根据具体要求,选用最优的结构,采用MOMENTUM联合仿真优化法,分别设计出1dB、2dB、4dB、8dB、16dB衰减位,再通过级联整体仿真优化设计出了所需衰减器。由于所设计的电路还进行了流片验证并使用探针台做了在片测试,因而最后还对测试结果进行了全面分析,讨论了所做工作的意义与不足。
该五位MMIC数字衰减器的工作频段为5-38GHz,就作者所知,是国内见报道的同类产品中带宽最宽的。设计软件使用了ADS2006A系统,采用0.25um pHEMT工艺线实现。经流片测试,所设计衰减器性能良好,在工作频带内的衰减范围为31dB,衰减步进为1dB,具有较精确的衰减步进误差(1.0±0.4dB),小的插入损耗(<7dB)以及优良的回波损耗(>12dB),芯片尺寸仅为2.4mm×1.2mm×0.1mm,可以应用于军事电子对抗及民用通信中。
With the development of communication technology,communication systems are constantly upgrading. Communication products also are developing at many directions such as miniaturization、low-power and reliability. Due to its small size, good stability, capability, consistency and cheap in mass yield, Monolithic Microwave Integrated Circuit (MMIC) is becoming more and more important in the communication market. As the key component of system, attenuators are widely used in broadband communications, microwave radio communications, military radar, space communications and other electronic equipments.
This paper mainly introduces the circuit design, layout design, testing results and analysis of an ultra broadband MMIC 5-bit digital attenuator.
Firstly, this paper describes the characteristics of MMIC technology and application. Secondly, making a presentation of the development of MMIC attenuator and its significance, then discussed several basic structures for attenuator. Subsequently, specifically this paper introduces the design of this ultra-wideband attenuator: According to the specific requirements, we choose the best structure, using MOMENTUM co-simulation for optimization to design 1dB, 2dB, 4dB, 8dB, 16dB attenuation bit, and then achieve the desired attenuator by running simulation and optimization of the whole cascade circuit. Since the circuit has been taped-out and testing on board, finally we make a comprehensive analysis of the results and a discussion of the significance and shortcomings of our work.
In the design, Advanced Design System 2006(ADS2006) is used as the EDA tool. Finally, the 5-bit digital attenuator was taped out with 0.25um pHEMT process. It has a good performance and operates at 5GHz-38GHz, has 31 dB dynamic range stepped by 1 dB; reference insertion loss:<7 dB; attenuation increments are 1.0±0.4 dB; input and output return loss:>12 dB. The chip size is only 2.4mm×1.2mm×0.1mm. As far as I know, the bandwidth of the attenuator is the broadest one yet reported in domestic literatures. It can be used for military electronic counter measures and civilian communications.
引文
[1]《中国集成电路大全》编委会编.微波集成电路[M].北京:国防工业出版社. 1995:1-45.
[2]顾墨琳,林守远.微波集成电路技术-回顾与展望[J].微波学报2000,16(3).9:336-341.
[3]吴群.单片微波集成电路技术的军事应用[D].硕士生微波学科前沿动态系列讲座介绍, 2003:13-21
[4]陈强. Ka波段T/R组件的研制[D].电子科技大学硕士学位论文. 2005:8-16.
[5]薛正辉,杨仕明,李伟明,任武编.微波固态电路[M].北京理工大学出版社. 2004:68-97.
[6] L. Sjogren, D. Ingram, M. Biedenbender, R. Lai, B. Allen, and K. Hubbard,“A low phase-error 44-GHz HEMT attenuator,”IEEE Microwave and Guided Wave Letters[J], 1998,8(5):378-382.
[7] D. Krafcsik, A. Fazal and S. Bishop,“Broadband, low-loss 5-bit and 6-bit digital attenuators,”IEEE MTT-S Int. Microwave Symp. Dig.[C], 1995,3: 1627-1630.
[8]王会智,沈亚,蒋幼泉,李拂晓,张斌.一种新颖的4bit和5bit超宽带GaAs单片数字衰减器[J].半导体学报, 2005,26(3):586-589.
[9] Inkwon Ju,Youn-Sub Noh and In-Bok Yom,“Ultra broadband DC to 40 GHz 5-bit pHEMT MMIC digital attenuator”IEEE Microwave Conference[C], 2005 European, 2005,2:4-7.
[10]高建军.场效应晶体管射频微波建模技术[M].北京:电子工业出版社2007:83-94.
[11]胡建萍,程海燕,陈显等。一种新的HEMT小信号模型参数提取方法[J]. 2003,19(3):887-892.
[12]顾继慧.微波技术[M].北京:科学出版社,2004:127-135.
[13]张海峰. X波段低相移单片六位数字衰减器的研究[D].南京理工大学硕士论文,2007:27-43.
[14]顾其净,项家祯,袁孝康编著.微波集成电路设计[M].清华大学出版社,1975:32-63.
[15] B. khabbaz, A. Pospishil and H. P. Singh,“DC-to-20-GHz MMIC multibit digital attenuators with on-chip TTL control,”IEEE Journal of Solid-State Circuits[J], 1992,27(10): 1457-1462.
[16] F. McGrath and R. Pratt,“An ultra broadband DC-12GHz 4-bit GaAs monolithic digital attenuator,”IEEE GaAs IC Symposium[C], 1991,3: 247-250.
[17] J. C. Sarkissian, M. Delmond, E. Laporte, E. Rogeaux and M. Soulard,“A Ku-band 6-bit digital attenuator with integrated serial to parallel converter,”IEEE MTT-S Int. Microwave Symp. Dig.[C], 1999,4:1915-1918.
[18] Triquint Semiconductor: 0.5-18GHz 5-Bit Digital Attenuator TGL6425-SCC, datasheet, 1998:1-6.
[19] M/A-COM: 2-20 GHz 5-Bit Digital Attenuator MAATGM0004-DIE, datasheet, 2003:1-8.
[20] Hittite: 0.5dB LSB GaAs MMIC 6-Bit Digital Attenuator, DC-13GHz HMC424-DIE, datasheet, 2005:1-7.
[21] BookhanTeehnology: 0.5-16GHz 6-bit digital attenuator P35-4304-000-200, datasheet, 2003:1-7.
[22] Caswell:DC-16GHz 5bit digital attenuator P35-4307-000-200,datasheet, 2003:1-8.
[23] Mimix:DC-18.0GHz GaAs MMIC 5-Bit Digital Attenuator A1000-BD,dateshee,2007:1-6.
[24]文光俊,谢甫珍,李家溉译.单片射频微波集成电路技术与设计[M].电子工业出版社,2007:132-146.
[25]申华军、陈延湖等. GaAs MMIC用无源元件的模型[J].半导体学报, 2006,27(10):1327-1331.
[26]罗小勇. pHEMT MMIC宽带单片功率放大器设计研究[D].电子科技大学硕士论文,2005:31-52.
[27]程知群.砷化嫁微波单片集成电路研究[D].中国科学院上海冶金研究研究所,2000:96-112.
[28]王志功、沈永朝.集成电路设计基础[M].北京:电子工业出版社,2004:35-51.
[29]陈雪军、徐世晖等.GaAs微波单片集成电路中的精确建模[J].固体电子学研究与进展,2001,21(2):1427-1431.
[30]陈新宇、陈继义等. GaAs MESFET开关模型[J].微波学报, 2002,18(2):1034-1039.
[31]谢媛媛、高学邦等. GaAs pHEMT开关模型的研究[J].半导体学报, 2006,31(3):1731-1736.
[32]戴永胜、方大纲. GaAsMMIc开关MEsFET电路建模技术研究[J].南京理工大学学报, 2006,30(5):1547-1551.
[33]刘琳、陈堂胜、戴永胜等一种X波段GaAs MMIC五位数字衰减器[J].固体电子学研究与进展,2000,20(4):1917-1922.
[34] Reinhold Ludwig,Pavel Bretehko.射频电路设计-理论与应用[M].北京:电子工业出版社,2002:36-68.
[35] Ian Robertson、Stepan Lucyszyn编著,文光俊等译.单片射频集成电路技术与设计[M].北京:电子工业出版社,2007:58-73.
[36]雷振亚.射频/微波电路导论[M].西安电子科技大学出版社.2005:12-47.
[37]陈新宇、徐全胜等.宽带GaAs MESFET开关模型[J].固体电子学研究与进展,2003,23(2):1873-1877.
[38] Yong-Sheng Dai,Da-Gang Fang, Yong-Xin Guo.“A Novel UWB (0.045.-50 GHz) Digital Analog Compatible MMIC Variable Attenuator with Low Insertion Phase Shift and Large Dynamie Range ,”IEEE Mierowave and Wireless ComPonents Letters[J] ,2007,17(1):1547-1551.
[39]戴永胜、陈堂胜等.一种新颖的DC-50GHz低插入相移MMIC可变衰减器[J].固体电子学研究与进展,2003,23(2):1678-1683.
[40]李效白.砷化镓微波功率场效应晶体管及其集成电路[M].北京:科学社会出版社,1998:161-198.
[41]张亚非等.半导体集成电路制造技术[M].北京:高等教育出版社,2006:20-68.
[42] Paul G.Flikkema,Andy D.Kucar, Brian Petry et al. The RF and Microwave Handbook[M]. 2002:34-89.
[43]李拂晓.亚微米GaAs pHEMT器件及其小信号建模[D].东南大学博士论文,2005:27-59.
[44]李拂晓、郑华等.砷化嫁0.5um PHEMT开关标准工艺研究[J].固体电子学研究与进展,2006,26(4):1578-1583.
[45]谢自力、邱凯等. pHEMT结构材料及器件[J].微纳电子技术,2002,(2):127-131.
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[47] Takasu,H.;Sakakibara,C.:Okumura,M.:Kamihashi,S.;“S-Band MMIC Digital Attenuator with Small Phase Variation,”Mierowave Conferenee[C],1999 Asia Pacific, 1999,2(3):421-424.
[48] O.V.Stukaeh,“Variable Attenuator with Low Phase Shift,”Proceedings of the 9th European Conference on Wireless Technology[C], 2006,3(2):347-331.
[49]吴亮.空间用微波多功能MMIC研究[D].南京理工大学硕士论文,2007:21-58.
[50]钱桂香.超宽带低相移单片六位微波数字衰减器的设计与研究[D].南京理工大学硕士论文,2008:3-37.
[51] Inder Bahl, Prakash Bhartia著,郑新、赵玉洁等译.微波固态电路设计(第二版)[M].北京:电子工业出版社,2006:13-27.
[52]李洪芹.赝配高速电子迁移率晶体管及其微波单片集成电路研究[D].中国科学院上海冶金研究所博士论文,2001:8-17.
[2]顾墨琳,林守远.微波集成电路技术-回顾与展望[J].微波学报2000,16(3).9:336-341.
[3]吴群.单片微波集成电路技术的军事应用[D].硕士生微波学科前沿动态系列讲座介绍, 2003:13-21
[4]陈强. Ka波段T/R组件的研制[D].电子科技大学硕士学位论文. 2005:8-16.
[5]薛正辉,杨仕明,李伟明,任武编.微波固态电路[M].北京理工大学出版社. 2004:68-97.
[6] L. Sjogren, D. Ingram, M. Biedenbender, R. Lai, B. Allen, and K. Hubbard,“A low phase-error 44-GHz HEMT attenuator,”IEEE Microwave and Guided Wave Letters[J], 1998,8(5):378-382.
[7] D. Krafcsik, A. Fazal and S. Bishop,“Broadband, low-loss 5-bit and 6-bit digital attenuators,”IEEE MTT-S Int. Microwave Symp. Dig.[C], 1995,3: 1627-1630.
[8]王会智,沈亚,蒋幼泉,李拂晓,张斌.一种新颖的4bit和5bit超宽带GaAs单片数字衰减器[J].半导体学报, 2005,26(3):586-589.
[9] Inkwon Ju,Youn-Sub Noh and In-Bok Yom,“Ultra broadband DC to 40 GHz 5-bit pHEMT MMIC digital attenuator”IEEE Microwave Conference[C], 2005 European, 2005,2:4-7.
[10]高建军.场效应晶体管射频微波建模技术[M].北京:电子工业出版社2007:83-94.
[11]胡建萍,程海燕,陈显等。一种新的HEMT小信号模型参数提取方法[J]. 2003,19(3):887-892.
[12]顾继慧.微波技术[M].北京:科学出版社,2004:127-135.
[13]张海峰. X波段低相移单片六位数字衰减器的研究[D].南京理工大学硕士论文,2007:27-43.
[14]顾其净,项家祯,袁孝康编著.微波集成电路设计[M].清华大学出版社,1975:32-63.
[15] B. khabbaz, A. Pospishil and H. P. Singh,“DC-to-20-GHz MMIC multibit digital attenuators with on-chip TTL control,”IEEE Journal of Solid-State Circuits[J], 1992,27(10): 1457-1462.
[16] F. McGrath and R. Pratt,“An ultra broadband DC-12GHz 4-bit GaAs monolithic digital attenuator,”IEEE GaAs IC Symposium[C], 1991,3: 247-250.
[17] J. C. Sarkissian, M. Delmond, E. Laporte, E. Rogeaux and M. Soulard,“A Ku-band 6-bit digital attenuator with integrated serial to parallel converter,”IEEE MTT-S Int. Microwave Symp. Dig.[C], 1999,4:1915-1918.
[18] Triquint Semiconductor: 0.5-18GHz 5-Bit Digital Attenuator TGL6425-SCC, datasheet, 1998:1-6.
[19] M/A-COM: 2-20 GHz 5-Bit Digital Attenuator MAATGM0004-DIE, datasheet, 2003:1-8.
[20] Hittite: 0.5dB LSB GaAs MMIC 6-Bit Digital Attenuator, DC-13GHz HMC424-DIE, datasheet, 2005:1-7.
[21] BookhanTeehnology: 0.5-16GHz 6-bit digital attenuator P35-4304-000-200, datasheet, 2003:1-7.
[22] Caswell:DC-16GHz 5bit digital attenuator P35-4307-000-200,datasheet, 2003:1-8.
[23] Mimix:DC-18.0GHz GaAs MMIC 5-Bit Digital Attenuator A1000-BD,dateshee,2007:1-6.
[24]文光俊,谢甫珍,李家溉译.单片射频微波集成电路技术与设计[M].电子工业出版社,2007:132-146.
[25]申华军、陈延湖等. GaAs MMIC用无源元件的模型[J].半导体学报, 2006,27(10):1327-1331.
[26]罗小勇. pHEMT MMIC宽带单片功率放大器设计研究[D].电子科技大学硕士论文,2005:31-52.
[27]程知群.砷化嫁微波单片集成电路研究[D].中国科学院上海冶金研究研究所,2000:96-112.
[28]王志功、沈永朝.集成电路设计基础[M].北京:电子工业出版社,2004:35-51.
[29]陈雪军、徐世晖等.GaAs微波单片集成电路中的精确建模[J].固体电子学研究与进展,2001,21(2):1427-1431.
[30]陈新宇、陈继义等. GaAs MESFET开关模型[J].微波学报, 2002,18(2):1034-1039.
[31]谢媛媛、高学邦等. GaAs pHEMT开关模型的研究[J].半导体学报, 2006,31(3):1731-1736.
[32]戴永胜、方大纲. GaAsMMIc开关MEsFET电路建模技术研究[J].南京理工大学学报, 2006,30(5):1547-1551.
[33]刘琳、陈堂胜、戴永胜等一种X波段GaAs MMIC五位数字衰减器[J].固体电子学研究与进展,2000,20(4):1917-1922.
[34] Reinhold Ludwig,Pavel Bretehko.射频电路设计-理论与应用[M].北京:电子工业出版社,2002:36-68.
[35] Ian Robertson、Stepan Lucyszyn编著,文光俊等译.单片射频集成电路技术与设计[M].北京:电子工业出版社,2007:58-73.
[36]雷振亚.射频/微波电路导论[M].西安电子科技大学出版社.2005:12-47.
[37]陈新宇、徐全胜等.宽带GaAs MESFET开关模型[J].固体电子学研究与进展,2003,23(2):1873-1877.
[38] Yong-Sheng Dai,Da-Gang Fang, Yong-Xin Guo.“A Novel UWB (0.045.-50 GHz) Digital Analog Compatible MMIC Variable Attenuator with Low Insertion Phase Shift and Large Dynamie Range ,”IEEE Mierowave and Wireless ComPonents Letters[J] ,2007,17(1):1547-1551.
[39]戴永胜、陈堂胜等.一种新颖的DC-50GHz低插入相移MMIC可变衰减器[J].固体电子学研究与进展,2003,23(2):1678-1683.
[40]李效白.砷化镓微波功率场效应晶体管及其集成电路[M].北京:科学社会出版社,1998:161-198.
[41]张亚非等.半导体集成电路制造技术[M].北京:高等教育出版社,2006:20-68.
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