基于硅纳米线波导的平面集成光器件的设计，制作与检测
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摘要
在众多的光通信器件中,基于平面光集成(Planar Lightwave Circuit)工艺的光器件由于其具有低成本,适合大规模制造等方面的优势,在近年来已经逐渐脱颖而出,成为构建未来光网络不可或缺的重要组成部分。而在各种材料中,硅绝缘体(Silicon-On-Insulator)集成器件具有高折射率差,高集成度等众多优点,是当前研究的一个热点。本文主要针对基于硅纳米波导平台的几种光集成器件进行了研究,提出一些新的设计或改进,并对部分设计完成了试验制作以及光学性能检测。
本文介绍了几种数值模拟方法,包括:标量衍射法(Scalar IntegrationMethod),束传播法(Beam Prooagation Method),时域有限差分法(Finite-differenceTime-domain Method),并将它们应用于各种光器件的设计当中。对于一些特殊情况,比如器件尺寸较大,同时需要分析器件的双向性能(比如反射特性),本文提出一种近似方法,将束传播法和时域有限差分法相结合,仅对其中存在反射界面的局部区域使用时域有限差分法,计算出相应的透射及反射场分布,然后再将这些光场分别作为正向和反向传播光场的源,利用束传播办法计算透射波及反射波在器件其他区域中的传播特性。该方法避免了直接对大尺寸器件进行FDTD模拟,大大降低了内存需要及运算时间,是一种有效的近似方法。
本文阐述了器件制作中的各个相关工序。本文使用了由等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition)方法沉积的非晶硅(Amorohous Silicon)及二氧化硅构成的SOI平台,来代替通常商用的SOI硅片。该办法的优点在于能灵活选择参数如各层薄膜厚度、折射率等,方便器件的设计与优化。缺点是非晶硅比单晶硅(Crystalline Silicon)具有更大的损耗。我们沉积的非晶硅经过测量,其材料损耗最好情况约为1.5dB/cm,完全可以接受。器件图案的形成使用了电子束曝光(Electronic Beam Lithography)来代替传统的光刻,以达到更高的分辨率(～100纳米)。刻蚀方法采用电感耦合等离子体—反应离子刻蚀(Inductively Coupled Plasma-Reactive Ion Etching)工艺,以获得较好的方向性和分辨率。
器件的光学性能测试采用了两种方法:端面耦合法(End-fire Method)和垂直耦合法(Vertical Coupling Method)。垂直耦合法是在输入波导和输出波导表面上利用套刻的办法,做上一系列浅刻蚀光栅,然后将光线从垂直方向上进行耦合。该方法比端面耦合法具有较高的耦合效率,但是并不适合于器件的最后封装。
本文首先对基于硅纳米波导平台的蚀刻衍射光栅波分复用器(EtchedDiffraction Grating Multi/Demultiplexer)进行了一系列的研究。设计并制作了基于全内反射(Total Internal Reflection)齿面的EDG,测量结果显示,与相同器件参数但未采用TIR齿面设计的EDG相比,衍射效率增加超过3dB。本文提出了一种基于交叉衍射级次(Cross-order)的EDG,仅用单一的EDG实现了对1310纳米、1490纳米及1550纳米三个信道的单纤三向器件(Triplexer),并进行了制作和检测,该器件可以应用于无源全光网络(Passive Optical Networks)的接入网方案中,用以实现三网合一服务(Triple Play Service)。文中还对硅纳米波导EDG的偏振特性进行了分析,讨论了两种偏振补偿的办法。
本文也在硅纳米波导平台上制作了一种基于柱状光子晶体的谐振腔结构。该谐振腔的理论品质因素(Q value)在10~4量级,实际测得最高的Q值在20000以上。该结构由于是基于柱状而非孔状光子晶体,更适合于传感方面的应用,并且测量显示这种谐振腔的峰值波长对光子晶体半径及背景介质折射率极为敏感,具有很高的灵敏度。
Optical devices based on Planar Lightwave Circuit (PLC) technology have well been studied due to their inherited advantages from Integrated Circuits (IC), such as: small size, high reliability, mass production and potential integration with microelectronics. Among all the materials, silicon nanowire platform gains more and more interests. The large refractive index difference between core and cladding allows tremendous reduction of the component size. This thesis studies theoretically and experimentally some integrated optical devices based on silicon nanophotonic platform, including echelle grating demultiplexers and photonic crystals.
Some of the numerical methods are introduced first. Scalar integral diffraction method is efficient for calculating the diffraction efficiency of gratings. Beam propagation method and finite-difference time-domain method are also introduced, for simulating the light propagation along the devices. A combined method based on BPM and FDTD method is introduced, which can save the memory and time for simulation to a large extent.
The fabrication technology and characterization methods are described. The fabrication steps involve: plasma assisted film deposition, E-beam lithography, RIE-etching. All these steps are proceeded under cleanroom environment. The characterization is mainly based on two methods: end-fire coupling and vertical grating coupling. The grating coupler is more efficient compared with the butt-coupling between fiber and nanowires, but is worse solution for final packaging. Several types of components have been realized and characterized with the above technology. The echelle grating demultiplexer is one of the key components in WDM networks. A method for increasing the diffraction efficiency based on total internal reflection is applied, which increases the efficiency by more than 3dB. A cross-order echelle grating-based triplexer, a bidirectional transceiver for application in the Passive Optical Networks (PON), has been designed and fabricated, which can multi/demultiplex three channels located at 1310nm, 1490nm and 1550nm. Photonic crystal devices are also addressed in the thesis. A silicon pillar type photonic crystal cavity has been fabricated with the measured Q value as high as about 2.5×10~4. It can be used for some bio-sensing applications and has an extremely high sensitivity for the changing of the background material.
本文介绍了几种数值模拟方法,包括:标量衍射法(Scalar IntegrationMethod),束传播法(Beam Prooagation Method),时域有限差分法(Finite-differenceTime-domain Method),并将它们应用于各种光器件的设计当中。对于一些特殊情况,比如器件尺寸较大,同时需要分析器件的双向性能(比如反射特性),本文提出一种近似方法,将束传播法和时域有限差分法相结合,仅对其中存在反射界面的局部区域使用时域有限差分法,计算出相应的透射及反射场分布,然后再将这些光场分别作为正向和反向传播光场的源,利用束传播办法计算透射波及反射波在器件其他区域中的传播特性。该方法避免了直接对大尺寸器件进行FDTD模拟,大大降低了内存需要及运算时间,是一种有效的近似方法。
本文阐述了器件制作中的各个相关工序。本文使用了由等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition)方法沉积的非晶硅(Amorohous Silicon)及二氧化硅构成的SOI平台,来代替通常商用的SOI硅片。该办法的优点在于能灵活选择参数如各层薄膜厚度、折射率等,方便器件的设计与优化。缺点是非晶硅比单晶硅(Crystalline Silicon)具有更大的损耗。我们沉积的非晶硅经过测量,其材料损耗最好情况约为1.5dB/cm,完全可以接受。器件图案的形成使用了电子束曝光(Electronic Beam Lithography)来代替传统的光刻,以达到更高的分辨率(～100纳米)。刻蚀方法采用电感耦合等离子体—反应离子刻蚀(Inductively Coupled Plasma-Reactive Ion Etching)工艺,以获得较好的方向性和分辨率。
器件的光学性能测试采用了两种方法:端面耦合法(End-fire Method)和垂直耦合法(Vertical Coupling Method)。垂直耦合法是在输入波导和输出波导表面上利用套刻的办法,做上一系列浅刻蚀光栅,然后将光线从垂直方向上进行耦合。该方法比端面耦合法具有较高的耦合效率,但是并不适合于器件的最后封装。
本文首先对基于硅纳米波导平台的蚀刻衍射光栅波分复用器(EtchedDiffraction Grating Multi/Demultiplexer)进行了一系列的研究。设计并制作了基于全内反射(Total Internal Reflection)齿面的EDG,测量结果显示,与相同器件参数但未采用TIR齿面设计的EDG相比,衍射效率增加超过3dB。本文提出了一种基于交叉衍射级次(Cross-order)的EDG,仅用单一的EDG实现了对1310纳米、1490纳米及1550纳米三个信道的单纤三向器件(Triplexer),并进行了制作和检测,该器件可以应用于无源全光网络(Passive Optical Networks)的接入网方案中,用以实现三网合一服务(Triple Play Service)。文中还对硅纳米波导EDG的偏振特性进行了分析,讨论了两种偏振补偿的办法。
本文也在硅纳米波导平台上制作了一种基于柱状光子晶体的谐振腔结构。该谐振腔的理论品质因素(Q value)在10~4量级,实际测得最高的Q值在20000以上。该结构由于是基于柱状而非孔状光子晶体,更适合于传感方面的应用,并且测量显示这种谐振腔的峰值波长对光子晶体半径及背景介质折射率极为敏感,具有很高的灵敏度。
Optical devices based on Planar Lightwave Circuit (PLC) technology have well been studied due to their inherited advantages from Integrated Circuits (IC), such as: small size, high reliability, mass production and potential integration with microelectronics. Among all the materials, silicon nanowire platform gains more and more interests. The large refractive index difference between core and cladding allows tremendous reduction of the component size. This thesis studies theoretically and experimentally some integrated optical devices based on silicon nanophotonic platform, including echelle grating demultiplexers and photonic crystals.
Some of the numerical methods are introduced first. Scalar integral diffraction method is efficient for calculating the diffraction efficiency of gratings. Beam propagation method and finite-difference time-domain method are also introduced, for simulating the light propagation along the devices. A combined method based on BPM and FDTD method is introduced, which can save the memory and time for simulation to a large extent.
The fabrication technology and characterization methods are described. The fabrication steps involve: plasma assisted film deposition, E-beam lithography, RIE-etching. All these steps are proceeded under cleanroom environment. The characterization is mainly based on two methods: end-fire coupling and vertical grating coupling. The grating coupler is more efficient compared with the butt-coupling between fiber and nanowires, but is worse solution for final packaging. Several types of components have been realized and characterized with the above technology. The echelle grating demultiplexer is one of the key components in WDM networks. A method for increasing the diffraction efficiency based on total internal reflection is applied, which increases the efficiency by more than 3dB. A cross-order echelle grating-based triplexer, a bidirectional transceiver for application in the Passive Optical Networks (PON), has been designed and fabricated, which can multi/demultiplex three channels located at 1310nm, 1490nm and 1550nm. Photonic crystal devices are also addressed in the thesis. A silicon pillar type photonic crystal cavity has been fabricated with the measured Q value as high as about 2.5×10~4. It can be used for some bio-sensing applications and has an extremely high sensitivity for the changing of the background material.
引文
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