功率集成电路中高压器件的设计
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摘要
功率集成电路是集成电路的重要分支，作为一个系统的控制部分(弱电)和执行部分(强电)的桥梁，它在电力电子、自动控制、家电通信、汽车电子等领域扮演着一个重要的角色。功率集成电路中的高压器件由于高压大电流的性能要求一直是研发功率集成电路中的关键和难点，并直接影响着功率集成电路的发展。目前，功率集成电路是国外许多著名微电子公司的研发重点，我国则处于相对落后的状态。
本文首先介绍了国内外功率集成电路的发展状况，然后介绍了高压集成电路中的几种终端技术、RESURF效应、器件模拟的基本理论和MEDICI器件模拟软件，最后对三种型号的高压功率器件的击穿特性进行了分析和计算机模拟，指出了影响器件电压的关键的物理和结构参数，并对这三种型号的器件进行模拟，得出的电特性曲线和参数基本上与公司给出的一致。
本文的工作主要是在SUN工作站上利用MEDICI二维器件仿真软件完成的，论文最后附上这三个器件的仿真程序及相应的曲线和参数，为今后的功率集成电路的研发打下了基础。
Power integrated circuit is one of the most important branches of integrated circuit. As the bridge of the control and execution part of the system, it plays an important role in the fields of electronic power, automatic control, communication and automotive. Owing to the requirement of big current and high voltage, the design of power devices is the key point in the research on power integrated circuit, and it has directly influenced the development of power integrated circuit. Therefore, many big microelectronics companies now focus on power integrated circuits.
First, the general introduction of power integrated circuit is presented in this paper. And then some terminal techniques on PIC, devices simulation theory, RESURFs effect and MEDICI software are presented. At last three kinds of high voltage power devices have been designed and simulated. Based on the analysis of the breakdown voltage and electric field distribution of the high power devices, the key physics and structural parameters effects on the breakdown voltage are found. The electrical property curves and parameters are basically consistent with those offered by the company.
To complete most of design work and get some useful conclusion, 2-D devices simulation software MEDICI was used. The project is believed to be valuable to the future research on PIC.
本文首先介绍了国内外功率集成电路的发展状况，然后介绍了高压集成电路中的几种终端技术、RESURF效应、器件模拟的基本理论和MEDICI器件模拟软件，最后对三种型号的高压功率器件的击穿特性进行了分析和计算机模拟，指出了影响器件电压的关键的物理和结构参数，并对这三种型号的器件进行模拟，得出的电特性曲线和参数基本上与公司给出的一致。
本文的工作主要是在SUN工作站上利用MEDICI二维器件仿真软件完成的，论文最后附上这三个器件的仿真程序及相应的曲线和参数，为今后的功率集成电路的研发打下了基础。
Power integrated circuit is one of the most important branches of integrated circuit. As the bridge of the control and execution part of the system, it plays an important role in the fields of electronic power, automatic control, communication and automotive. Owing to the requirement of big current and high voltage, the design of power devices is the key point in the research on power integrated circuit, and it has directly influenced the development of power integrated circuit. Therefore, many big microelectronics companies now focus on power integrated circuits.
First, the general introduction of power integrated circuit is presented in this paper. And then some terminal techniques on PIC, devices simulation theory, RESURFs effect and MEDICI software are presented. At last three kinds of high voltage power devices have been designed and simulated. Based on the analysis of the breakdown voltage and electric field distribution of the high power devices, the key physics and structural parameters effects on the breakdown voltage are found. The electrical property curves and parameters are basically consistent with those offered by the company.
To complete most of design work and get some useful conclusion, 2-D devices simulation software MEDICI was used. The project is believed to be valuable to the future research on PIC.
引文
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3、张波．“半导体技术的发展浪起潮涌”．世界产品与技术．2002．(2)．P11-14
4、张为佐，白继彬．“电力电子技术发展的新动向”．电力电子技术．1996第4期
5、李肇基，李鸿雁等．“智能功率集成电路精彩纷呈”．世界产品与技术．2000年第6期．P12-15
6、P. Rossel. "Smart power and high voltage integrated circuits and related MOS technologies".Microelectronics.Vol. 20, Nos. 1～2, 77～103, J. 1989
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8、陈星弼．“MOS功率器件”．电子学报．1990(5)：97—105
9、尹贤文，何林，黄平．“金属场板加SIPOS电阻场板的新型终端技术”．微电子学．1992(6)：4—7
10、于宗光，王立莫．“高压集成技术”．微电子学．1992(3)：29—38
11、Ludikhuize, A.W. " A review of RESURF technology" .PowerSemiconductor Devices and Ics. 2000. Proceedings, Pages:11-18
12、Darwish, M.. "Role of semiconductor devices in portable electronicspower management".IEE Colloquium on. 29 June 1999 P.1/1-1/4
13、吉利久．《计算微电子学》．科学出版社．1996
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15、施敏．《半导体器件物理与工艺》．苏州大学出版社．2002：445
16、陈星弼．《功率MOSFET与高压集成电路》．东南大学出版社．1990：285
17、陈星弼．《功率MOSFET与高压集成电路》．东南大学出版社．1990：164
18、陈星弼．《功率MOSFET与高压集成电路》．东南大学出版社．1990
19、陈忠景．《微电子学》．P42～44
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24、何进，张兴，黄如，林晓云，何泽宏．“改进击穿电压和导通电阻折中性能的线性变化掺杂漂移区RESURF LDMOS晶体管”．电子学报．Vol．30，No．2，Feb．2002
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2、陈烨，吴济钧．“电力半导体器件的现状及发展趋势”．半导体技术．1996年8月第4期
3、张波．“半导体技术的发展浪起潮涌”．世界产品与技术．2002．(2)．P11-14
4、张为佐，白继彬．“电力电子技术发展的新动向”．电力电子技术．1996第4期
5、李肇基，李鸿雁等．“智能功率集成电路精彩纷呈”．世界产品与技术．2000年第6期．P12-15
6、P. Rossel. "Smart power and high voltage integrated circuits and related MOS technologies".Microelectronics.Vol. 20, Nos. 1～2, 77～103, J. 1989
7、卢豫曾．“高压RESURF LDMOSFET的实现”。电子学报．1995(8)：10～14
8、陈星弼．“MOS功率器件”．电子学报．1990(5)：97—105
9、尹贤文，何林，黄平．“金属场板加SIPOS电阻场板的新型终端技术”．微电子学．1992(6)：4—7
10、于宗光，王立莫．“高压集成技术”．微电子学．1992(3)：29—38
11、Ludikhuize, A.W. " A review of RESURF technology" .PowerSemiconductor Devices and Ics. 2000. Proceedings, Pages:11-18
12、Darwish, M.. "Role of semiconductor devices in portable electronicspower management".IEE Colloquium on. 29 June 1999 P.1/1-1/4
13、吉利久．《计算微电子学》．科学出版社．1996
14、刘光延．“高压功率MOS器件终端结构计算机模拟的物理模型”．电子器件，1995年6月．第18卷．第2期：65—75
15、施敏．《半导体器件物理与工艺》．苏州大学出版社．2002：445
16、陈星弼．《功率MOSFET与高压集成电路》．东南大学出版社．1990：285
17、陈星弼．《功率MOSFET与高压集成电路》．东南大学出版社．1990：164
18、陈星弼．《功率MOSFET与高压集成电路》．东南大学出版社．1990
19、陈忠景．《微电子学》．P42～44
20、吴瑞，黄飞鸿，郑国祥，宗祥福．“高压CMOS管工艺的设计、模拟和验证”．复旦学报．Vol．41，No．2，Apr．2002
21、徐家权，郎金荣，叶润涛，朱大中．“HVIC中的高压器件—RESURF结构LDMOSFET”．浙江大学学报．Vol．27，No．1，Nov．1993
22、韩雁．“高压BCD集成电路中高压功率器件的设计研究”．固体电子学研究与进展．Vol．22，No．3，Aug．2002
23、J.J. Kim, M.H..Kim, S.L. Kim, C.K. Jeon, Y.S. Choi, H.S. Kang, C.S. Song "The new high voltage level up shifter for HVIC".Power Electronics Specialists Conference, Volume: 2, Pages:626-630, June 2002
24、何进，张兴，黄如，林晓云，何泽宏．“改进击穿电压和导通电阻折中性能的线性变化掺杂漂移区RESURF LDMOS晶体管”．电子学报．Vol．30，No．2，Feb．2002
25、唐本奇，罗晋生，耿斌，李国政．“LDMOS晶体管新型器件结构的耐压分析”．半导体学报．Vol．20，No．9，Sep．1999
26、陆生礼，孙伟锋，易扬波，谭悦，吴建辉，时龙兴．“PDP选址驱动芯片的HV—COMS器件设计”．固体电子学研究与进展．Vol．22，No．1，Feb．2002
27、V. Rumennik. "1200V BiCMOS technology and its applications". ISPSD-1992 P. 322-327
28、A. Ludikhuize. "Kirk effect limitations in high voltage IC's". ISPSD-1994 P. 249-252
29、S. Merchant, E. Arnold, H. aumgart, R. Egloff, T. Letavic, S. Mukherjee, and H. Pein. "Dependence of Breakdown Voltage on Drift Length and Buried Oxide Thickness in SOI RESURF LDMOS Transistors".ISPSD-1993 P. 124-128
30、Liou, T.-I, Teng, C.-S, Merrill, R.B.."Hot-electron-induced
degradation of conventional, minimum overlap, LDD and DDD N-channel MOSFETs". Circuits and Devices Magazine, IEEE, Volume: 4, Issue: 2, March 1988 P. 9—15
31、Dragomirescu, D., Charitat, G., Morancho, F., Rossel, P.. "Novel concepts for high voltage junction termination techniques using very deep trenches". Semiconductor Conference, 1999, vol. 1, P. 67—70
32、Parpia, A.,Salama, C.A.T.. "Optimization of RESURF LDMOS transistors: an analytical approach". Electron Devices, V. 37, Issue: 3, Mar. 1990, P. 789-796
33、M.M. De Souza, E.M. Sankara Narayanan. "Double resurf technology for HVICs".ELECTRONICS LETTERS 6th June 1996 Vol. 32 No. 12
34、Junjie XIE, Yan.HAN. "A novel RESURF LDMOS with embedded CB-layer" 6th International Conference on, 22-25 Oct. 2001 P.174-177.vol,1
35、EDISON FONG, DORMAN C. PITZER, RICHAND J. ZEMAN. "Power DMOS for High-Frequency and Switching Applications".IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. ED-27, NO. 2, FEB. 1980
36、S.C. SUN, JAMES D. PLUMMER. "Modeling of the On-Resistance of LDMOS, VDMOS, and VMOS Power Transistors".IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. ED-27,NO. 2, FEB. 1980
37、Aoike, N., Hoshino, M., Iwabuchi, A.. "Automotive HID headlamps producing compact electronic ballasts using power ICs" Industry Applications Magazine.IEEE, V. 8, Issue: 1, Jan.-Feb. 2002 P. 37-41
38、Y.Z. Xu, S. Hardikar, M.M. DeSouza, G. J. Cao, E.M.S. Narayanan. "Design of novel high side power MOSFET based on HVIC process".ELECTRONICS LETTERS. 14th October 1999 Vol. 35 No. 21
39、Scott, R.S., Pattanayak, D.N., Kohl, J.E., Adler, M.S., Ahle, R.S., Wildi, E.J.. "High voltage pullup devices in a BiMOS HVIC
technology" . IEDM-1988. P. 800-803
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