基于深刻蚀槽的InP多段耦合腔激光器的研究
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摘要
波分复用技术是提升现代光传输效率的一个重要手段,该技术的思想是将多个波长的光信号通过一路光纤进行传播,一次提高光纤传输的效率,因此光源是该技术中非常关键的部分。目前市场上所使用的固定波长光源主要是DFB激光器,波长可调谐激光器主要是DFB激光器阵列或者DBR激光器,这些现行技术的主要问题是都用到了二次外延、光栅等结构,对于制造工艺要求较高,而且大部分现行的波长可调谐激光器方案都无法实现单电极调谐波长,控制电路非常复杂,这些因素都会提高生产成本。
针对这一问题我们提出深刻蚀槽耦合腔激光器的设计,该结构利用深刻蚀槽将多个FP腔耦合,利用游标效应实现单模输出以及波长调谐的效果。这一设计无需二次外延,依靠普通的半导体制造工艺就可以实现,可以大大降低制造成本。
本文首先对深刻蚀槽耦合腔激光所涉及到的各个制造工艺步骤进行了优化,特别是对其中的干法刻蚀环节进行了细致的研究,包括刻蚀中的各种效应、把不同气体配方的选择与影响以及各种掩模刻蚀效果的对比,并针对深刻蚀槽结构的刻蚀配方进行了讨论和优化。
我们对于深刻蚀槽耦合腔激光器的原理、设计和各个参数对于性能的影响进行了讨论,分别制造了固定波长和波长可调谐两种激光器,并对于其中关键的深刻蚀槽结构进行了详细的研究,证明这一结构对于腔内引入的损耗较小并且能够为腔内提供较大的反馈。固定波长深刻蚀槽耦合腔激光器显示了非常好的单模性能,并在线宽方面具有非常突出的优势(达到78kHz,是目前同类型半导体激光器中线宽最窄的报道结果),利用这一结构我们还展示了一个8X100GHz激光器阵列芯片。波长可调谐深刻蚀槽耦合腔激光器显示了非常好的调谐性能,通过载流子注入效应,我们可以实现单电极控制调谐得到所有的9个连续的100GHz的光通信信道,所有信道的边模抑制比都大于30dB,并且各信道输出功率均一,功率差小于1.6dB。
最后我们讨论了深刻蚀槽耦合腔激光器的未来研究方向,
我们相信这个激光器设计可以满足未来光通信的要求,作为波分复用以及相干通信方面的光源选择方案之一。
Wavelength-division multiplexing (WDM) is an important technique in morden optical communication. It multiplexes a number of optical carrier signals onto a single optical fiber by using different wavelengths enablng bidirectional communications over one strand of fiber, as well as multiplication of capacity. Light source, including single-mode laser and tunable laser, is an essential component in the WDM system. The most widely used lasers are the DFB lasers and DBR lasers. These devices require second re-growth which increase the fabrication cost. Besides, most of the tunable lasers have a very complicated tuning mechanism whcih involve at least2electrodes at the same time.
In this thesis, we are trying to propose a novel design called coupled-cavity laser with deep trenches. By coupling several fP cavitieswith deep trenches we are able to realize both single-mode lasers and tunable lasers. Such lasers do not need gratings or second re-growth. Its low manufacture requirement would help to reduce the fabiration cost.
We first studied and optimized each fabrication step for the coupled-cavity laser. The process of dry etching has been thoroughly discussed including different effects during the etching, the choice of gas recipe and the etching results of using various mask materials. We discussed a lot on the etching process of deep trenches and developed an specially optimized recipe for the deep etching.
The working theory and design principle of the coupled-cavity laser are dicussed for both single-mode lasers and tunable lasers. The effect of the deep trench, as a key component in our laser, has been studied and compared with those reported shallow trenches. It is proved by both theory and experiments that deep trenches can provide more feed back with less loss than the shallow ones. The tested results of the the single-mode laser shows a good spectrum purity, and the linewidth can be as small as78kHz which is the smallest ever reported for semiconductor lasers of similar designs. An8X100GHz Laser arry has been fabricated and demonstrated.
We have also successfully fabricated the tunable version of coupled-cavity laser with deep trenches. The device showed agood tunability and was able to achieve all the9100GHz channels by single electrode control. The SMSR of all the channels are larger than30dB and the power variation is less than1.6dB
At the end of this work, we discussed about the futurewrok on our laser design.
We believe this coupled-cavity laser with deep trenches can fufill the requirements of future optical communication, especially in WDM and coherent communication. Its tight structure and ease of fabrication will make this novel design a possible candidate of light source in future.
针对这一问题我们提出深刻蚀槽耦合腔激光器的设计,该结构利用深刻蚀槽将多个FP腔耦合,利用游标效应实现单模输出以及波长调谐的效果。这一设计无需二次外延,依靠普通的半导体制造工艺就可以实现,可以大大降低制造成本。
本文首先对深刻蚀槽耦合腔激光所涉及到的各个制造工艺步骤进行了优化,特别是对其中的干法刻蚀环节进行了细致的研究,包括刻蚀中的各种效应、把不同气体配方的选择与影响以及各种掩模刻蚀效果的对比,并针对深刻蚀槽结构的刻蚀配方进行了讨论和优化。
我们对于深刻蚀槽耦合腔激光器的原理、设计和各个参数对于性能的影响进行了讨论,分别制造了固定波长和波长可调谐两种激光器,并对于其中关键的深刻蚀槽结构进行了详细的研究,证明这一结构对于腔内引入的损耗较小并且能够为腔内提供较大的反馈。固定波长深刻蚀槽耦合腔激光器显示了非常好的单模性能,并在线宽方面具有非常突出的优势(达到78kHz,是目前同类型半导体激光器中线宽最窄的报道结果),利用这一结构我们还展示了一个8X100GHz激光器阵列芯片。波长可调谐深刻蚀槽耦合腔激光器显示了非常好的调谐性能,通过载流子注入效应,我们可以实现单电极控制调谐得到所有的9个连续的100GHz的光通信信道,所有信道的边模抑制比都大于30dB,并且各信道输出功率均一,功率差小于1.6dB。
最后我们讨论了深刻蚀槽耦合腔激光器的未来研究方向,
我们相信这个激光器设计可以满足未来光通信的要求,作为波分复用以及相干通信方面的光源选择方案之一。
Wavelength-division multiplexing (WDM) is an important technique in morden optical communication. It multiplexes a number of optical carrier signals onto a single optical fiber by using different wavelengths enablng bidirectional communications over one strand of fiber, as well as multiplication of capacity. Light source, including single-mode laser and tunable laser, is an essential component in the WDM system. The most widely used lasers are the DFB lasers and DBR lasers. These devices require second re-growth which increase the fabrication cost. Besides, most of the tunable lasers have a very complicated tuning mechanism whcih involve at least2electrodes at the same time.
In this thesis, we are trying to propose a novel design called coupled-cavity laser with deep trenches. By coupling several fP cavitieswith deep trenches we are able to realize both single-mode lasers and tunable lasers. Such lasers do not need gratings or second re-growth. Its low manufacture requirement would help to reduce the fabiration cost.
We first studied and optimized each fabrication step for the coupled-cavity laser. The process of dry etching has been thoroughly discussed including different effects during the etching, the choice of gas recipe and the etching results of using various mask materials. We discussed a lot on the etching process of deep trenches and developed an specially optimized recipe for the deep etching.
The working theory and design principle of the coupled-cavity laser are dicussed for both single-mode lasers and tunable lasers. The effect of the deep trench, as a key component in our laser, has been studied and compared with those reported shallow trenches. It is proved by both theory and experiments that deep trenches can provide more feed back with less loss than the shallow ones. The tested results of the the single-mode laser shows a good spectrum purity, and the linewidth can be as small as78kHz which is the smallest ever reported for semiconductor lasers of similar designs. An8X100GHz Laser arry has been fabricated and demonstrated.
We have also successfully fabricated the tunable version of coupled-cavity laser with deep trenches. The device showed agood tunability and was able to achieve all the9100GHz channels by single electrode control. The SMSR of all the channels are larger than30dB and the power variation is less than1.6dB
At the end of this work, we discussed about the futurewrok on our laser design.
We believe this coupled-cavity laser with deep trenches can fufill the requirements of future optical communication, especially in WDM and coherent communication. Its tight structure and ease of fabrication will make this novel design a possible candidate of light source in future.
引文
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